Fault Protection and Detection,
10 Ω RON, Quad SPST Switches
ADG5412F-EP
Enhanced Product
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Overvoltage protection up to −55 V and +55 V
Power-off protection up to −55 V and +55 V
Overvoltage detection on source pins
Low on resistance: 10 Ω
On-resistance flatness: 0.5 Ω
5.5 kV human body model (HBM) ESD rating
Latch-up immune under any circumstance
Known state without digital inputs present
ADG5412F-EP
S1
D1
S2
D2
S3
D3
S4
D4
ENHANCED PRODUCT FEATURES
FF
IN1 IN2 IN3 IN4
Supports defense and aerospace applications (AQEC standard)
Military temperature range: −55°C to +125°C
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
NOTES
1. SWITCHES SHOWN FOR A LOGIC 1 INPUT.
12705-001
FAULT
DETECTION
+ SWITCH
DRIVER
Figure 1.
APPLICATIONS
Avionics
Analog input/output modules
Process control/distributed control systems
Data acquisition
Instrumentation
Automatic test equipment
Communication systems
Relay replacement
GENERAL DESCRIPTION
The ADG5412F-EP contains four independently controlled
single-pole/single-throw (SPST) switches. The ADG5412F-EP
has four switches that turn on with Logic 1 inputs. Each switch
conducts equally well in both directions when on, and each
switch has an input signal range that extends to the supplies.
The digital inputs are compatible with 3 V logic inputs over the
full operating supply range.
When no power supplies are present, the switch remains in the
off condition, and the switch inputs are high impedance. Under
normal operating conditions, if the analog input signal levels on
any Sx pin exceed VDD or VSS by a threshold voltage, VT, the
switch turns off. Input signal levels up to +55 V or −55 V
relative to ground are blocked, in both the powered and
unpowered condition.
The low on resistance of these switches, combined with
on-resistance flatness over a significant portion of the signal
range make them an ideal solution for data acquisition and gain
Rev. A
switching applications where excellent linearity and low distortion
are critical.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
5.
6.
Source pins are protected against voltages greater than the
supply rails, up to −55 V and +55 V.
Source pins are protected against voltages between −55 V
and +55 V in an unpowered state.
Overvoltage detection with digital output indicates
operating state of switches.
Trench isolation guards against latch-up.
Optimized for low on resistance and on-resistance flatness.
The ADG5412F-EP can be operated from a dual supply of
±5 V up to ±22 V or a single power supply of +8 V up to +44 V.
Additional application and technical information can be found
in the ADG5412F data sheet.
Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
ADG5412F-EP
Enhanced Product
TABLE OF CONTENTS
Features .............................................................................................. 1
12 V Single Supply.........................................................................7
Enhanced Product Features ............................................................ 1
36 V Single Supply.........................................................................9
Applications ....................................................................................... 1
Continuous Current per Channel, Sx or Dx ........................... 11
Functional Block Diagram .............................................................. 1
Absolute Maximum Ratings ......................................................... 12
General Description ......................................................................... 1
ESD Caution................................................................................ 12
Product Highlights ........................................................................... 1
Pin Configuration and Function Descriptions........................... 13
Revision History ............................................................................... 2
Typical Performance Characteristics ........................................... 14
Specifications..................................................................................... 3
Test Circuits..................................................................................... 19
±15 V Dual Supply ....................................................................... 3
Outline Dimensions ....................................................................... 22
±20 V Dual Supply ....................................................................... 5
Ordering Guide .......................................................................... 22
REVISION HISTORY
8/15—Rev. 0 to Rev. A
Changes to Features Section............................................................ 1
Added Enhanced Product Features Section.................................. 1
7/15—Revision 0: Initial Version
Rev. A | Page 2 of 22
Enhanced Product
ADG5412F-EP
SPECIFICATIONS
±15 V DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, CDECOUPLING = 0.1 µF, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between Channels, ∆RON
On-Resistance Flatness, RFLAT(ON)
Threshold Voltage, VT
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID (On), IS (On)
+25°C
−40°C to
+85°C
VDD to VSS
10
11.2
9.5
10.7
0.05
0.5
0.05
0.35
0.6
0.9
0.1
0.4
0.7
±0.1
±1.5
±0.1
±1.5
±0.3
±1.5
14
16.5
13.5
16
0.6
0.7
0.5
0.5
1.1
1.1
0.5
0.5
±5.0
±18.0
±2.0
±4.5
nA typ
nA max
nA typ
nA max
nA typ
nA max
±78
µA typ
±40
µA typ
±2.0
nA typ
±15.0
Power Supplies Grounded
±8.0
±10
Power Supplies Floating
±30
±10
±50
±10
±49.0
nA max
nA typ
±100
±10
nA max
µA typ
2.0
0.8
V min
V max
µA typ
µA max
pF typ
V min
V max
±0.7
±1.2
Digital Input Capacitance, CIN
Output Voltage High, VOH
Output Voltage Low, VOL
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
V typ
±21.0
Power Supplies Grounded or Floating
DIGITAL INPUTS/OUTPUTS
Input Voltage High, VINH
Input Voltage Low, VINL
Input Current, IINL or IINH
Unit
±5.0
FAULT
Source Leakage Current, IS
With Overvoltage
Drain Leakage Current, ID
With Overvoltage
−55°C to
+125°C
5.0
2.0
0.8
Rev. A | Page 3 of 22
Test Conditions/Comments
VDD = 13.5 V, VSS = −13.5 V, see Figure 30
VS = ±10 V, IS = −10 mA
VS = ±9 V, IS = −10 mA
VS = ±10 V, IS = −10 mA
VS = ±9 V, IS = −10 mA
VS = ±10 V, IS = −10 mA
VS = ±9 V, IS = −10 mA
See Figure 26
VDD = 16.5 V, VSS = −16.5 V
VS = ±10 V, VD = ∓10 V, see Figure 31
VS = ±10 V, VD = ∓10 V, see Figure 31
VS = VD = ±10 V, see Figure 32
VDD = 16.5 V, VSS = 16.5 V, GND = 0 V,
VS = ±55 V, see Figure 35
VDD = 0 V or floating, VSS = 0 V or floating,
GND = 0 V, INx = 0 V or floating,
VS = ±55 V, see Figure 36
VDD = 16.5 V, VSS = 16.5 V, GND = 0 V,
VS = ±55 V, see Figure 35
VDD = 0 V, VSS = 0 V, GND = 0 V, VS = ±55 V,
INx = 0 V, see Figure 36
VDD = floating, VSS = floating, GND = 0 V,
VS = ±55 V, INx = 0 V, see Figure 36
VIN = VGND or VDD
ADG5412F-EP
Parameter
DYNAMIC CHARACTERISTICS1
tON
tOFF
Overvoltage Response Time, tRESPONSE
Overvoltage Recovery Time, tRECOVERY
Interrupt Flag Response Time, tDIGRESP
Interrupt Flag Recovery Time, tDIGREC
Charge Injection, QINJ
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion Plus Noise, THD + N
−3 dB Bandwidth
Insertion Loss
CS (Off )
CD (Off )
CD (On), CS (On)
POWER REQUIREMENTS
Normal Mode
IDD
IGND
ISS
Fault Mode
IDD
IGND
ISS
VDD/VSS
1
Enhanced Product
+25°C
400
495
410
510
460
585
720
930
85
60
600
680
−70
−90
0.0015
−40°C to
+85°C
−55°C to
+125°C
525
550
545
555
185
615
630
1050
1100
115
85
270
−0.72
13
12
24
0.9
1.2
0.4
0.55
0.5
0.65
Unit
Test Conditions/Comments
ns typ
ns max
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns typ
µs typ
ns typ
pC typ
dB typ
dB typ
% typ
RL = 300 Ω, CL = 35 pF
VS = 10 V, see Figure 44
RL = 300 Ω, CL = 35 pF
VS = 10 V, see Figure 44
VS1 = VS2 = 10 V, see Figure 44
RL = 1 kΩ, CL = 2 pF, see Figure 39
MHz typ
dB typ
pF typ
pF typ
pF typ
1.3
0.6
0.7
RL = 1 kΩ, CL = 2 pF, see Figure 40
CL = 10 pF, see Figure 41
CL = 10 pF, see Figure 42
CL = 10 pF, RPULLUP = 1 kΩ, see Figure 43
VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 45
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 33
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 34
RL = 10 kΩ, VS = 15 V p-p,
f = 20 Hz to 20 kHz, see Figure 38
RL = 50 Ω, CL = 5 pF, see Figure 37
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 37
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
VDD = 16.5 V, VSS = −16.5 V, GND = 0 V,
digital inputs = 0 V, 5 V, or VDD
mA typ
mA max
mA typ
mA max
mA typ
mA max
VS = ±55 V
1.2
1.6
0.8
1.0
0.5
1.0
1.8
1.1
1.8
±5
±22
Guaranteed by design; not subject to production test.
Rev. A | Page 4 of 22
mA typ
mA max
mA typ
mA max
mA typ
mA max
V min
V max
GND = 0 V
GND = 0 V
Enhanced Product
ADG5412F-EP
±20 V DUAL SUPPLY
VDD = 20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, CDECOUPLING = 0.1 µF, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between Channels, ∆RON
On-Resistance Flatness, RFLAT(ON)
Threshold Voltage, VT
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID (On), IS (On)
+25°C
−40°C to
+85°C
VDD to VSS
10
11.5
9.5
11
0.05
0.35
0.05
0.35
1.0
1.4
0.1
0.4
0.7
±0.1
±1.5
±0.1
±1.5
±0.3
±1.5
14.5
16.5
14
16.5
0.5
0.5
0.5
0.5
1.5
1.5
0.5
0.5
±21.0
±5.0
±18.0
±2.0
±4.5
±78
µA typ
±40
µA typ
±5.0
nA typ
±1.0
±10
±1.0
Power Supplies Grounded
Power Supplies Floating
±30
±10
±50
±10
±1.0
µA max
nA typ
±100
±10
nA max
µA typ
2.0
0.8
V min
V max
µA typ
µA max
pF typ
V min
V max
0.7
1.2
Digital Input Capacitance, CIN
Output Voltage High, VOH
Output Voltage Low, VOL
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
V typ
±5.0
Power Supplies Grounded or Floating
DIGITAL INPUTS
Input Voltage High, VINH
Input Voltage Low, VINL
Input Current, IINL or IINH
Unit
nA typ
nA max
nA typ
nA max
nA typ
nA max
FAULT
Source Leakage Current, IS
With Overvoltage
Drain Leakage Current, ID
With Overvoltage
−55°C to
+125°C
5.0
2.0
0.8
Rev. A | Page 5 of 22
Test Conditions/Comments
VDD = 18 V, VSS = −18 V, see Figure 30
VS = ±15 V, IS = −10 mA
VS = ±13.5 V, IS = −10 mA
VS = ±15 V, IS = −10 mA
VS = ±13.5 V, IS = −10 mA
VS = ±15 V, IS = −10 mA
VS = ±13.5 V, IS = −10 mA
See Figure 26
VDD = 22 V, VSS = −22 V
VS = ±15 V, VD = ∓15 V, see Figure 31
VS = ±15 V, VD = ∓15 V, see Figure 31
VS = VD = ±15 V, see Figure 32
VDD = 22 V, VSS = −22 V, GND = 0 V,
VS = ±55 V, see Figure 35
VDD = 0 V or floating, VSS = 0 V or
floating, GND = 0 V, INx = 0 V or
floating, VS = ±55 V, see Figure 36
VDD = +22 V, VSS = −22 V, GND = 0 V,
VS = ±55 V, see Figure 35
VDD = 0 V, VSS = 0 V, GND = 0 V,
VS = ±55 V, INx = 0 V, see Figure 36
VDD = floating, VSS = floating, GND =
0 V, VS = ±55 V, INx = 0 V, see Figure 36
VIN = VGND or VDD
ADG5412F-EP
Parameter
DYNAMIC CHARACTERISTICS1
tON
tOFF
Overvoltage Response Time, tRESPONSE
+25°C
400
500
415
515
−40°C to
+85°C
−55°C to
+125°C
530
555
550
565
200
500
515
1400
1700
115
85
Unit
Test Conditions/Comments
ns typ
ns max
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns typ
µs typ
ns typ
pC typ
dB typ
RL = 300 Ω, CL = 35 pF
VS = 10 V, see Figure 44
RL = 300 Ω, CL = 35 pF
VS = 10 V, see Figure 44
VS1 = VS2 = 10 V, see Figure 44
RL = 1 kΩ, CL = 2 pF, see Figure 39
Charge Injection, QINJ
Off Isolation
370
480
840
1200
85
60
600
640
−70
Channel-to-Channel Crosstalk
−90
dB typ
Total Harmonic Distortion Plus Noise, THD + N
0.001
% typ
−3 dB Bandwidth
Insertion Loss
270
−0.73
MHz typ
dB typ
12
11
23
pF typ
pF typ
pF typ
Overvoltage Recovery Time, tRECOVERY
Interrupt Flag Response Time, tDIGRESP
Interrupt Flag Recovery Time, tDIGREC
CS (Off )
CD (Off )
CD (On), CS (On)
POWER REQUIREMENTS
Normal Mode
IDD
IGND
ISS
Fault Mode
IDD
IGND
ISS
VDD/VSS
1
Enhanced Product
0.9
1.2
0.4
0.55
0.5
0.65
1.3
0.6
0.7
RL = 1 kΩ, CL = 2 pF, see Figure 40
CL = 10 pF, see Figure 41
CL = 10 pF, see Figure 42
CL = 10 pF, RPULLUP = 1 kΩ, see Figure 43
VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 45
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 33
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 34
RL = 10 kΩ, VS = 20 V p-p,
f = 20 Hz to 20 kHz, see Figure 38
RL = 50 Ω, CL = 5 pF, see Figure 37
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 37
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
VDD = 22 V, VSS = −22 V,
digital inputs = 0 V, 5 V, or VDD
mA typ
mA max
mA typ
mA max
mA typ
mA max
VS = ±55 V
1.2
1.6
0.8
1.0
0.5
1.0
1.8
1.1
1.8
±5
±22
Guaranteed by design; not subject to production test.
Rev. A | Page 6 of 22
mA typ
mA max
mA typ
mA max
mA typ
mA max
V min
V max
GND = 0 V
GND = 0 V
Enhanced Product
ADG5412F-EP
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, CDECOUPLING = 0.1 µF, unless otherwise noted.
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between Channels, ∆RON
On-Resistance Flatness, RFLAT(ON)
Threshold Voltage, VT
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID (On), IS (On)
+25°C
−40°C to
+85°C
0 V to VDD
22
24.5
10
11.2
0.05
0.5
0.05
0.5
12.5
14.5
0.6
0.9
0.7
31
37
14
16.5
0.6
0.7
0.6
0.7
19
23
1.1
1.3
±0.1
±5.0
±1.5
±0.3
±1.5
±5.0
±18.0
±2.0
±4.5
nA max
nA typ
nA max
±78
µA typ
±40
µA typ
±21.0
±2.0
nA max
nA typ
nA typ
±8.0
±10
±15.0
Power Supplies Grounded
Power Supplies Floating
±30
±10
±50
±10
±49.0
nA max
nA typ
±100
±10
nA max
µA typ
2.0
0.8
V min
V max
µA typ
µA max
pF typ
V min
V max
0.7
1.2
Digital Input Capacitance, CIN
Output Voltage High, VOH
Output Voltage Low, VOL
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
V typ
±1.5
±0.1
Power Supplies Grounded or Floating
DIGITAL INPUTS
Input Voltage High, VINH
Input Voltage Low, VINL
Input Current, IINL or IINH
Unit
nA typ
FAULT
Source Leakage Current, IS
With Overvoltage
Drain Leakage Current, ID
With Overvoltage
−55°C to
+125°C
5.0
2.0
0.8
Rev. A | Page 7 of 22
Test Conditions/Comments
VDD = 10.8 V, VSS = 0 V, see Figure 30
VS = 0 V to 10 V, IS = −10 mA
VS = 3.5 V to 8.5 V, IS = −10 mA
VS = 0 V to 10 V, IS = −10 mA
VS = 3.5 V to 8.5 V, IS = −10 mA
VS = 0 V to 10 V, IS = −10 mA
VS = 3.5 V to 8.5 V, IS = −10 mA
See Figure 26
VDD = 13.2 V, VSS = 0 V
VS = 1 V/10 V, VD = 10 V/1 V,
see Figure 31
VS = 1 V/10 V, VD = 10 V/1 V,
see Figure 31
VS = VD = 1 V/10 V, see Figure 32
VDD = 13.2 V, VSS = 0 V, GND = 0 V,
VS = ±55 V, see Figure 35
VDD = 0 V or floating, VSS = 0 V or
floating, GND = 0 V, INx = 0 V or
floating, VS = ±55 V, see Figure 36
VDD = 13.2 V, VSS = 0 V or floating,
GND = 0 V, VS = ±55 V,
see Figure 35
VDD = 0 V, VSS = 0 V, GND = 0 V,
VS = ±55 V, INx = 0 V, see Figure 36
VDD = floating, VSS = floating,
GND = 0 V, VS = ±55 V, INx = 0 V,
see Figure 36
VIN = VGND or VDD
ADG5412F-EP
Parameter
DYNAMIC CHARACTERISTICS1
tON
tOFF
Overvoltage Response Time, tRESPONSE
Overvoltage Recovery Time, tRECOVERY
Interrupt Flag Response Time, tDIGRESP
Interrupt Flag Recovery Time, tDIGREC
+25°C
400
485
375
460
560
660
640
800
85
60
600
−40°C to
+85°C
−55°C to
+125°C
515
540
495
520
170
700
720
865
960
115
85
Unit
Test Conditions/Comments
ns typ
ns max
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns typ
µs typ
ns typ
RL = 300 Ω, CL = 35 pF
VS = 8 V, see Figure 44
RL = 300 Ω, CL = 35 pF
VS = 8 V, see Figure 44
VS1 = VS2 = 8 V, see Figure 44
RL = 1 kΩ, CL = 2 pF, see Figure 39
Charge Injection, QINJ
340
pC typ
Off Isolation
−65
dB typ
Channel-to-Channel Crosstalk
−90
dB typ
Total Harmonic Distortion Plus Noise, THD + N
0.007
% typ
−3 dB Bandwidth
Insertion Loss
270
−0.74
MHz typ
dB typ
16
15
25
pF typ
pF typ
pF typ
CS (Off )
CD (Off )
CD (On), CS (On)
POWER REQUIREMENTS
Normal Mode
IDD
IGND
ISS
Fault Mode
IDD
IGND
ISS
VDD
1
Enhanced Product
0.9
1.2
0.4
0.55
0.5
0.65
1.3
0.6
0.7
RL = 1 kΩ, CL = 2 pF, see Figure 40
CL = 10 pF, see Figure 41
CL = 10 pF, see Figure 42
CL = 10 pF, RPULLUP = 1 kΩ,
see Figure 43
VS = 6 V, RS = 0 Ω, CL = 1 nF,
see Figure 45
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 33
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 34
RL = 10 kΩ, VS = 6 V p-p,
f = 20 Hz to 20 kHz, see Figure 38
RL = 50 Ω, CL = 5 pF, see Figure 37
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 37
VS = 6 V, f = 1 MHz
VS = 6 V, f = 1 MHz
VS = 6 V, f = 1 MHz
VDD = 13.2 V, VSS = 0 V,
digital inputs = 0 V, 5 V, or VDD
mA typ
mA max
mA typ
mA max
mA typ
mA max
VS = ±55 V
1.2
1.6
0.8
1.0
0.5
1.0
1.8
1.1
1.8
8
44
Guaranteed by design; not subject to production test.
Rev. A | Page 8 of 22
mA typ
mA max
mA typ
mA max
mA typ
mA max
V min
V max
Digital inputs = 5 V
VS = ±55 V, VD = 0 V
GND = 0 V
GND = 0 V
Enhanced Product
ADG5412F-EP
36 V SINGLE SUPPLY
VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, CDECOUPLING = 0.1 µF, unless otherwise noted.
Table 4.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between Channels, ∆RON
On-Resistance Flatness, RFLAT(ON)
Threshold Voltage, VT
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID (On), IS (On)
+25°C
−40°C to
+85°C
0 V to VDD
22
24.5
10
11
0.05
0.5
0.05
0.35
12.5
14.5
0.1
0.4
0.7
±0.1
±1.5
±0.1
±1.5
±0.3
±1.5
31
37
14
16.5
0.6
0.7
0.5
0.5
19
23
0.5
0.5
±5.0
±18.0
±2.0
±4.5
nA typ
nA max
nA typ
nA max
nA typ
nA max
±78
µA typ
±40
µA typ
±2.0
nA typ
±8.0
±10
±15.0
Power Supplies Grounded
Power Supplies Floating
±30
±10
±50
±10
±49.0
nA max
nA typ
±100
±10
nA max
µA typ
2.0
0.8
V min
V max
µA typ
µA max
pF typ
V min
V max
0.7
1.2
Digital Input Capacitance, CIN
Output Voltage High, VOH
Output Voltage Low, VOL
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
V typ
±21.0
Power Supplies Grounded or Floating
DIGITAL INPUTS
Input Voltage High, VINH
Input Voltage Low, VINL
Input Current, IINL or IINH
Unit
±5.0
FAULT
Source Leakage Current, IS
With Overvoltage
Drain Leakage Current, ID
With Overvoltage
−55°C to
+125°C
5.0
2.0
0.8
Rev. A | Page 9 of 22
Test Conditions/Comments
VDD = 32.4 V, VSS = 0 V, see Figure 30
VS = 0 V to 30 V, IS = −10 mA
VS = 4.5 V to 28 V, IS = −10 mA
VS = 0 V to 30 V, IS = −10 mA
VS = 4.5 V to 28 V, IS = −10 mA
VS = 0 V to 30 V, IS = −10 mA
VS = 4.5 V to 28 V, IS = −10 mA
See Figure 26
VDD =39.6 V, VSS = 0 V
VS = 1 V/30 V, VD = 30 V/1 V, see Figure 31
VS = 1 V/30 V, VD = 30 V/1 V, see Figure 31
VS = VD = 1 V/30 V, see Figure 32
VDD = 39.6 V, VSS = 0 V, GND = 0 V,
VS = +55 V, −40 V, see Figure 35
VDD = 0 V or floating, VSS = 0 V or
floating, GND = 0 V, INx = 0 V or
floating, VS = +55 V, −40 V, see Figure 36
VDD = 39.6 V, VSS = 0 V or floating,
GND = 0 V, VS = +55 V, −40 V,
see Figure 35
VDD = 0 V, VSS = 0 V, GND = 0 V,
VS = +55 V, −40 V, INx = 0 V,
see Figure 36
VDD = floating, VSS = floating,
GND = 0 V, VS = +55 V, −40 V,
INx = 0 V, see Figure 36
VIN = VGND or VDD
ADG5412F-EP
Parameter
DYNAMIC CHARACTERISTICS1
tON
tOFF
Overvoltage Response Time, tRESPONSE
+25°C
400
490
375
460
−40°C to
+85°C
−55°C to
+125°C
520
545
485
510
195
360
375
2300
2700
115
85
Unit
Test Conditions/Comments
ns typ
ns max
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns typ
µs typ
ns typ
pC typ
RL = 300 Ω, CL = 35 pF
VS = 18 V, see Figure 44
RL = 300 Ω, CL = 35 pF
VS = 18 V, see Figure 44
VS1 = VS2 = 18 V, see Figure 44
RL = 1 kΩ, CL = 2 pF, see Figure 39
Charge Injection, QINJ
250
350
1500
2000
85
60
600
610
Off Isolation
−70
dB typ
Channel-to-Channel Crosstalk
−90
dB typ
Total Harmonic Distortion Plus Noise, THD + N
0.001
% typ
−3 dB Bandwidth
Insertion Loss
270
−0.75
MHz typ
dB typ
12
11
23
pF typ
pF typ
pF typ
Overvoltage Recovery Time, tRECOVERY
Interrupt Flag Response Time, tDIGRESP
Interrupt Flag Recovery Time, tDIGREC
CS (Off )
CD (Off )
CD (On), CS (On)
POWER REQUIREMENTS
Normal Mode
IDD
IGND
ISS
Fault Mode
IDD
IGND
ISS
VDD
1
Enhanced Product
0.9
1.2
0.4
0.55
0.5
0.65
1.3
0.6
0.7
RL = 1 kΩ, CL = 2 pF, see Figure 40
CL = 10 pF, see Figure 41
CL = 10 pF, see Figure 42
CL = 10 pF, RPULLUP = 1 kΩ, see Figure 43
VS = 18 V, RS = 0 Ω, CL = 1 nF,
see Figure 45
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 33
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 34
RL = 10 kΩ, VS = 18 V p-p,
f = 20 Hz to 20 kHz, see Figure 38
RL = 50 Ω, CL = 5 pF, see Figure 37
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 37
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VDD = 39.6 V, VSS = 0 V,
digital inputs = 0 V, 5 V, or VDD
mA typ
mA max
mA typ
mA max
mA typ
mA max
VS = +55 V, −40 V
1.2
1.6
0.8
1.0
0.5
1.0
1.8
1.1
1.8
8
44
Guaranteed by design; not subject to production test.
Rev. A | Page 10 of 22
mA typ
mA max
mA typ
mA max
mA typ
mA max
V min
V max
GND = 0 V
GND = 0 V
Enhanced Product
ADG5412F-EP
CONTINUOUS CURRENT PER CHANNEL, Sx OR Dx
Table 5.
Parameter
16-LEAD TSSOP
θJA = 112.6°C/W
25°C
85°C
125°C
Unit
Test Conditions/Comments
83
64
59
48
39
29
mA max
mA max
VS = VSS + 4.5 V to VDD − 4.5 V
VS = VSS to VDD
Rev. A | Page 11 of 22
ADG5412F-EP
Enhanced Product
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 6.
Parameter
VDD to VSS
VDD to GND
VSS to GND
Sx Pins to GND
Sx to VDD or VSS
VS to VD
Dx Pins1
Digital Inputs
Peak Current, Sx or Dx Pins
Continuous Current, Sx or Dx Pins
Digital Output
Operating Temperature Range
Storage Temperature Range
Junction Temperature
Thermal Impedance, θJA
16-Lead TSSOP, θJA Thermal
Impedance (4-Layer Board)
Reflow Soldering Peak
Temperature, Pb Free
ESD (HBM: ANSI/ESD STM5.1-2007)
Input/Output Port to Supplies
Input/Output Port to
Input/Output Port
All Other Pins
1
2
Rating
48 V
−0.3 V to +48 V
−48 V to +0.3 V
−55 V to +55 V
80 V
80 V
VSS − 0.7 V to VDD + 0.7 V or
30 mA, whichever occurs first
GND − 0.3 V to +48 V
288 mA (pulsed at 1 ms,
10% duty cycle maximum)
Data2 + 15%
GND − 0.3 V to 6 V or 30 mA,
whichever occurs first
−55°C to +125°C
−65°C to +150°C
150°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating can be applied at any
one time.
ESD CAUTION
112.6°C/W
As per JEDEC J-STD-020
5.5 kV
5.5 kV
5.5 kV
Overvoltages at the Dx pins are clamped by internal diodes. Limit current to
the maximum ratings given.
See Table 5.
Rev. A | Page 12 of 22
Enhanced Product
ADG5412F-EP
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
IN1
1
16 IN2
D1
2
15 D2
14 S2
4
ADG5412F-EP
GND
5
TOP VIEW
(Not to Scale)
S4
6
11 S3
D4
7
10 D3
IN4
8
13 VDD
12 FF
9
IN3
12705-002
S1 3
VSS
Figure 2. Pin Configuration
Table 7. Pin Function Descriptions
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
Mnemonic
IN1
D1
S1
VSS
GND
S4
D4
IN4
IN3
D3
S3
FF
13
14
15
16
VDD
S2
D2
IN2
Description
Logic Control Input.
Drain Terminal. This pin can be an input or an output.
Overvoltage Protected Source Terminal. This pin can be an input or an output.
Most Negative Power Supply Potential.
Ground (0 V) Reference.
Overvoltage Protected Source Terminal. This pin can be an input or an output.
Drain Terminal. This pin can be an input or an output.
Logic Control Input.
Logic Control Input.
Drain Terminal. This pin can be an input or an output.
Overvoltage Protected Source Terminal. This pin can be an input or an output.
Fault Flag Digital Output. This pin has a high output when the device is in normal operation or a low
output when a fault condition occurs on any of the Sx inputs.
Most Positive Power Supply Potential.
Overvoltage Protected Source Terminal. This pin can be an input or an output.
Drain Terminal. This pin can be an input or an output.
Logic Control Input.
Table 8. ADG5412F-EP Truth Table
INx
1
0
Switch Condition (S1 to S4)
On
Off
Rev. A | Page 13 of 22
ADG5412F-EP
Enhanced Product
TYPICAL PERFORMANCE CHARACTERISTICS
VDD = +15V
VSS = –15V
TA = 25°C
35
VDD = +20V
VSS = –20V
VDD = +18V
VSS = –18V
15
VDD = +16.5V
VSS = –16.5V
30
ON RESISTANCE (Ω)
20
ON RESISTANCE (Ω)
40
VDD = +22V
VSS = –22V
VDD = +13.5V
VSS = –13.5V
10
20
+125°C
15
+85°C
10
VDD = +15V
VSS = –15V
5
25
+25°C
–40°C
5
–20
–15
–10
–5
0
5
10
15
20
25
VS, VD (V)
–55°C
0
–15
12705-004
0
–25
–12
–9
–6
–3
0
3
9
6
12
15
VS, VD (V)
Figure 3. RON as a Function of VS, VD (Dual Supply)
12705-007
25
Figure 6. RON as a Function of VS, VD for Different Temperatures,
±15 V Dual Supply
25
40
VDD = +20V
VSS = –20V
TA = 25°C
35
VDD = 12V
VSS = 0V
30
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
20
VDD = 10.8V
VSS = 0V
15
10
VDD = 13.2V
VSS = 0V
25
20
+125°C
15
+85°C
10
+25°C
5
–40°C
5
4
2
6
8
10
12
14
VS, VD (V)
–55°C
0
–20
–15
–10
–5
0
5
10
Figure 4. RON as a Function of VS, VD (12 V Single Supply)
20
Figure 7. RON as a Function of VS, VD for Different Temperatures,
±20 V Dual Supply
25
40
VDD = 12V
VSS = 0V
TA = 25°C
35
VDD = 36V
VSS = 0V
ON RESISTANCE (Ω)
30
VDD = 32.4V
VSS = 0V
15
10
20
+125°C
15
+85°C
10
VDD = 39.6V
VSS = 0V
5
25
+25°C
–40°C
0
0
5
10
15
20
25
30
35
VS, VD (V)
40
12705-006
5
Figure 5. RON as a Function of VS, VD (36 V Single Supply)
–55°C
0
0
2
4
6
8
10
12
VS, VD (V)
Figure 8. RON as a Function of VS, VD for Different Temperatures,
12 V Single Supply
Rev. A | Page 14 of 22
12705-009
20
ON RESISTANCE (Ω)
15
VS, VD (V)
12705-008
0
12705-005
0
Enhanced Product
ADG5412F-EP
40
1
VDD = 36V
VSS = 0V
35
0
25
20
+125°C
15
+85°C
10
+25°C
–40°C
5
–2
–3
–4
IS (OFF) + –
IS (OFF) – +
IS, ID (ON) + +
–55°C
0
4
8
12
16
20
24
28
32
36
VS, VD (V)
–5
12705-010
0
VDD = 12V
VSS = 0V
VBIAS = 1V/10V
–1
0
20
40
ID (OFF) + –
ID (OFF) – +
IS, ID (ON) – –
60
80
100
120
TEMPERATURE (°C)
12705-013
LEAKAGE CURRENT (nA)
ON RESISTANCE (Ω)
30
Figure 12. Leakage Current vs. Temperature, 12 V Single Supply
Figure 9. RON as a Function of VS, VD for Different Temperatures,
36 V Single Supply
2
2
VDD = +15V
VSS = –15V
VBIAS = +10V/–10V
1
0
–1
–2
–3
–4
–5
–6
–8
0
20
40
60
80
100
120
TEMPERATURE (°C)
–6
IS (OFF) + –
IS (OFF) – +
IS, ID (ON) + +
–10
0
20
40
ID (OFF) + –
ID (OFF) – +
IS, ID (ON) – –
60
80
100
120
TEMPERATURE (°C)
Figure 13. Leakage Current vs. Temperature, 36 V Single Supply
Figure 10. Leakage Current vs. Temperature, ±15 V Dual Supply
5
2
VDD = +15V
VSS = –15V
0
–2
–4
–6
–5
–10
–15
–8
IS (OFF) + –
IS (OFF) – +
IS, ID (ON) + +
–10
0
20
40
ID (OFF) + –
ID (OFF) – +
IS, ID (ON) – –
60
80
100
120
TEMPERATURE (°C)
Figure 11. Leakage Current vs. Temperature, ±20 V Dual Supply
VS = –30V
VS = –55V
VS = +30V
VS = +55V
–20
0
20
40
60
80
TEMPERATURE (°C)
100
120
12705-015
LEAKAGE CURRENT (nA)
0
VDD = +20V
VSS = –20V
VBIAS = +15V/–15V
12705-012
LEAKAGE CURRENT (nA)
–4
–8
ID (OFF) + –
ID (OFF) – +
IS, ID (ON) – –
12705-011
IS (OFF) + –
IS (OFF) – +
IS, ID (ON) + +
–7
VDD = 36V
VSS = 0V
VBIAS = 1V/30V
–2
12705-014
LEAKAGE CURRENT (nA)
LEAKAGE CURRENT (nA)
0
Figure 14. Overvoltage Leakage Current vs. Temperature, ±15 V Dual Supply
Rev. A | Page 15 of 22
ADG5412F-EP
Enhanced Product
5
0
VDD = +15V
VSS = –15V
TA = 25°C
VDD = +20V
VSS = –20V
OFF ISOLATION (dB)
–20
–5
–10
–15
VS = –30V
VS = –55V
VS = +30V
VS = +55V
–25
0
20
–40
–60
–80
–100
40
60
80
100
120
TEMPERATURE (°C)
–120
1k
10k
100k
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 15. Overvoltage Leakage Current vs. Temperature, ±20 V Dual Supply
12705-019
–20
12705-016
LEAKAGE CURRENT (nA)
0
Figure 18. Off Isolation vs. Frequency, ±15 V Dual Supply
2
0
VDD = +15V
VSS = –15V
TA = 25°C
VDD = 12V
VSS = 0V
0
–20
CROSSTALK (dB)
–4
–6
–8
–10
VS = –30V
VS = –55V
VS = +30V
VS = +55V
–14
–16
0
20
–40
–60
–80
–100
40
60
80
100
120
TEMPERATURE (°C)
–120
10k
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 16. Overvoltage Leakage Current vs. Temperature, 12 V Single Supply
Figure 19. Crosstalk vs. Frequency, ±15 V Dual Supply
2
800
VDD = 36V
VSS = 0V
0
TA = 25°C
700
600
CHARGE INJECTION (pC)
–2
–4
–6
–8
–10
–14
0
20
400
300
VDD = 12V
VSS = 0V
200
0
40
60
80
TEMPERATURE (°C)
100
120
Figure 17. Overvoltage Leakage Current vs. Temperature, 36 V Single Supply
Rev. A | Page 16 of 22
–100
0
5
10
15
20
25
30
35
40
VS (V)
Figure 20. Charge Injection vs. Source Voltage (VS), Single Supply
12705-021
–12
VDD = 36V
VSS = 0V
500
100
VS = –38V
VS = –40V
VS = +38V
VS = +55V
12705-018
LEAKAGE CURRENT (nA)
100k
12705-020
–12
12705-017
LEAKAGE CURRENT (nA)
–2
Enhanced Product
800
ADG5412F-EP
0
TA = 25°C
–1.0
600
–1.5
500
400
VDD = +15V
VSS = –15V
300
200
–2.0
–2.5
–3.0
–3.5
100
–4.0
0
–10
–5
0
5
10
15
20
VS (V)
–5.0
10k
12705-022
–15
1M
10M
100M
Figure 24. Bandwidth vs. Frequency, ±15 V Dual Supply
0
480
VDD = +15V
VSS = –15V
TA = 25°C
WITH DECOUPLING CAPACITORS
460
440
–40
–80
400
tON (12V)
tON (36V)
tON (±15V)
tON (±20V)
tOFF (12V)
tOFF (36V)
tOFF (±15V)
tOFF (±20V)
380
360
–120
340
100k
1M
10M
100M
1G
FREQUENCY (Hz)
320
–55
12705-023
–140
10k
5
25
45
65
85
105
125
Figure 25. tON, tOFF Times vs. Temperature
0.9
THRESHOLD VOLTAGE, VT (V)
LOAD = 10kΩ
TA = 25°C
0.015
VDD = 12V, VSS = 0V, VS = 6V p-p
0.010
VDD = 15V, VSS = –15V, VS = 15V p-p
0.005
–15
TEMPERATURE (°C)
Figure 22. ACPSRR vs. Frequency, ±15 V Dual Supply
0.020
–35
12705-026
TIME (ns)
420
–60
–100
VDD = 20V, VSS = –20V, VS = 20V p-p
0.8
0.7
0.6
0
0
5000
10000
15000
FREQUENCY (Hz)
20000
Figure 23. THD + N vs. Frequency
0.5
–40
–20
0
20
40
60
80
100
TEMPERATURE (°C)
Figure 26. Threshold Voltage (VT) vs. Temperature
Rev. A | Page 17 of 22
120
12705-027
VDD = 36V, VSS = 0V, VS = 18V p-p
12705-024
THD + N (%)
1G
FREQUENCY (Hz)
Figure 21. Charge Injection vs. Source Voltage (VS), Dual Supply
–20
100k
12705-025
–4.5
–100
–20
ACPSRR (dB)
VDD = +15V
VSS = –15V
TA = 25°C
–0.5
VDD = +20V
VSS = –20V
BANDWIDTH (dB)
CHARGE INJECTION (pC)
700
ADG5412F-EP
Enhanced Product
24
TA = 25°C
VDD = +10V
VSS = –10V
T
SOURCE
SIGNAL VOLTAGE (V p-p)
20
VDD
2
DRAIN
M400ns
A CH2
T
–10.00ns
10.1V
0
1
Figure 29. Large Signal Voltage Tracking vs. Frequency
DRAIN
1
VSS
M400ns
A CH2
T
–10.00ns
–14.7V
12705-029
SOURCE
CH2 5.00V
10
FREQUENCY (MHz)
Figure 27. Drain Output Response to Positive Overvoltage
CH1 5.00V
CH3 5.00V
DISTORTIONLESS
OPERATING
REGION
8
Figure 28. Drain Output Response to Negative Overvoltage
Rev. A | Page 18 of 22
100
12705-030
CH2 5.00V
12
4
12705-028
CH1 5.00V
CH3 5.00V
16
Enhanced Product
ADG5412F-EP
TEST CIRCUITS
V
IS
Dx
12705-031
IDS
VS
ID
Sx
A
RON = V/IDS
Dx
A
RL
10kΩ
|VS| > |VDD| OR |VSS|
12705-034
Sx
Figure 35. Switch Overvoltage Leakage
Figure 30. On Resistance
VDD = VSS = GND = 0V
IS
A
A
VD
VS
NC = NO CONNECT
VD
RL
10kΩ
VSS
VDD
0.1µF
0.1µF
A
12705-033
Dx
A
Figure 36. Switch Unpowered Leakage
ID (ON)
Sx
Dx
VS
Figure 31. Off Leakage
NC
ID
Sx
VDD
NETWORK
ANALYZER
VSS
50Ω
Sx
Figure 32. On Leakage
INx
VS
Dx
VDD
VSS
VIN
0.1µF
0.1µF
VDD
RL
50Ω
GND
NETWORK
ANALYZER
VSS
INSERTION LOSS = 20 log
50Ω
50Ω
VIN
RL
50Ω
GND
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
Figure 37. Bandwidth
VS
Dx
VOUT
VDD
VSS
0.1µF
0.1µF
OFF ISOLATION = 20 log
VOUT
VS
12705-044
Sx
INx
VDD
AUDIO
PRECISION
VSS
RS
Sx
Figure 33. Off Isolation
VS
V p-p
INx
Dx
VSS
VIN
0.1µF
0.1µF
VDD
VSS
GND
NETWORK
ANALYZER
S1
RL
50Ω
VOUT
Figure 38. THD + N
Dx
S2
GND
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
VS
VOUT
VS
12705-045
RL
50Ω
RL
10kΩ
Figure 34. Channel-to-Channel Crosstalk
Rev. A | Page 19 of 22
VOUT
12705-047
VDD
VOUT
12705-046
Dx
12705-035
Sx
A
ID (OFF)
12705-032
IS (OFF)
ADG5412F-EP
Enhanced Product
VDD
VSS
0.1µF
VDD + 0.5V
0.1µF
VDD
SOURCE
VOLTAGE
(VS)
VSS
S1
VD
D1
CL*
2pF
VS
0V
ADG5412F-EP
RL
1kΩ
tRESPONSE
VDD – 0.9V
S2 TO S4
OUTPUT
(VD)
12705-036
GND
0V
*INCLUDES TRACK CAPACITANCE
Figure 39. Overvoltage Response Time, tRESPONSE
VDD
VSS
0.1µF
0.1µF
VDD + 0.5V
VDD
SOURCE
VOLTAGE
(VS)
0V
VSS
S1
VD
D1
CL*
2pF
VS
RL
1kΩ
ADG5412F-EP
tRECOVERY
S2 TO S4
OUTPUT
(VD)
1V
0V
12705-037
GND
*INCLUDES TRACK CAPACITANCE
Figure 40. Overvoltage Recovery Time, tRECOVERY
VDD
VSS
0.1µF
0.1µF
VDD + 0.5V
VDD
SOURCE
VOLTAGE
(VS)
VSS
D1
S1
VS
0V
S2 TO S4
ADG5412F-EP
tDIGRESP
FF
OUTPUT
(VFF)
GND
0.1VOUT
*INCLUDES TRACK CAPACITANCE
Figure 41. Interrupt Flag Response Time, tDIGRESP
Rev. A | Page 20 of 22
12705-038
0V
CL*
12pF
Enhanced Product
ADG5412F-EP
VDD
VSS
0.1µF
VDD + 0.5V
0.1µF
VDD
SOURCE
VOLTAGE
(VS)
VSS
S1
D1
VS
S2 TO S4
0V
ADG5412F-EP
FF
tDIGREC
CL*
12pF
0.9VOUT
OUTPUT
(VFF)
0V
12705-039
GND
*INCLUDES TRACK CAPACITANCE
Figure 42. Interrupt Flag Recovery Time, tDIGREC
VDD
VSS
0.1µF
0.1µF
VDD + 0.5V
VDD
SOURCE
VOLTAGE
(VS)
VSS
S1
VS
D1
S2 TO S4
5V
0V
RPULLUP
1kΩ
ADG5412F-EP
tDIGREC
OUTPUT
FF
5V
CL*
12pF
3V
OUTPUT
(VFF)
12705-040
GND
0V
*INCLUDES TRACK CAPACITANCE
Figure 43. Interrupt Flag Recovery Time, tDIGREC, with a 1 kΩ Pull-Up Resistor
VDD
VSS
0.1µF
0.1µF
ADG5412F-EP
VIN
Sx
VS
50%
50%
VSS
VOUT
Dx
CL
35pF
RL
300Ω
INx
90%
VOUT
10%
GND
12705-042
VDD
tOFF
tON
Figure 44. Switching Times, tON and tOFF
0.1µF
VDD
VSS
VDD
VSS
0.1µF
ADG5412F-EP
VS
Sx
Dx
VOUT
VIN
OFF
ON
CL
1nF
INx
VOUT
GND
QINJ = CL × ΔVOUT
ΔVOUT
12705-043
RS
Figure 45. Charge Injection, QINJ
Rev. A | Page 21 of 22
ADG5412F-EP
Enhanced Product
OUTLINE DIMENSIONS
5.10
5.00
4.90
16
9
4.50
4.40
4.30
6.40
BSC
1
8
PIN 1
1.20
MAX
0.15
0.05
0.20
0.09
0.30
0.19
0.65
BSC
COPLANARITY
0.10
SEATING
PLANE
8°
0°
0.75
0.60
0.45
COMPLIANT TO JEDEC STANDARDS MO-153-AB
Figure 46. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
ADG5412FTRUZ-EP
ADG5412FTRUZ-EP-R7
1
Temperature Range
−55°C to +125°C
−55°C to +125°C
Package Description
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Thin Shrink Small Outline Package [TSSOP]
Z = RoHS Compliant Part.
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D12705-0-8/15(A)
Rev. A | Page 22 of 22
Package Option
RU-16
RU-16