3 V/5 V CMOS
0.5 Ω SPDT/2:1 Mux in SC70
ADG849
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Ultralow on-resistance:
0.5 Ω typical
0.8 Ω maximum at 5 V supply
Excellent audio performance, ultralow distortion:
0.13 Ω typical
0.24 Ω maximum RON flatness
High current carrying capability:
400 mA continuous current
600 mA peak current at 5 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
Typical power consumption (<0.01 µW)
Pin-compatible upgrade for the ADG749 and ADG779
ADG849
S2
D
S1
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
04737-0-001
IN
Figure 1.
APPLICATIONS
Cellular phones
PDAs
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement
GENERAL DESCRIPTION
The ADG849 is a monolithic, CMOS SPDT (single pole, double
throw) switch that operates with a supply range of 1.8 V to 5.5 V.
It is designed to offer ultralow on-resistance values of typically
0.5 Ω. This design makes the ADG849 an ideal solution for
applications that require minimal distortion through the switch.
The ADG849 also has the capability of carrying large amounts
of current, typically 600 mA at 5 V operation.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
5.
Very low on-resistance, 0.5 Ω typical.
Tiny, 6-lead SC70 package.
Low power dissipation. The CMOS construction ensures
low power dissipation.
High current carrying capability.
Low THD + noise (0.01% typ).
Each switch of the ADG849 conducts equally well in both
directions when on. The device exhibits break-before-make
switching action, thus preventing momentary shorting when
switching channels.
The ADG849 is available in a tiny, 6-lead SC70 package, making
it the ideal candidate for space-constrained applications.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
ADG849
TABLE OF CONTENTS
Specifications..................................................................................... 3
Typical Performance Characteristics ..............................................7
Absolute Maximum Ratings............................................................ 5
Test Circuits........................................................................................9
ESD Caution.................................................................................. 5
Outline Dimensions ....................................................................... 11
Pin Configuration and Function Descriptions............................. 6
Ordering Guide .......................................................................... 11
REVISION HISTORY
7/04—Revision 0: Initial Version
Rev. 0| Page 2 of 12
ADG849
SPECIFICATIONS
Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V1
Parameter
ANALOG SWITCH
Analog Signal Range
On-Resistance (RON)
+25°C
0.05
On-Resistance Flatness (RFLAT(ON))
0.095
0.13
0.18
Channel On Leakage, ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON
–40°C to
+125°C
0 V to VDD
0.5
0.6
On-Resistance Match Between Channels
(∆RON)
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
–40°C to
+85°C
0.7
0.8
0.11
0.125
0.22
0.24
Unit
Test Conditions/Comments
V
Ω typ
Ω max
VS = 0 V to VDD, IDS = –100 mA
See Figure 15
Ω typ
VS = 0.85 V, IDS = –100 mA
Ω max
Ω typ
Ω max
VS = 0 V to VDD, IDS = –100 mA
±0.01
nA typ
±0.04
nA typ
2.0
0.8
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
±0.1
ns typ
ns max
ns typ
ns max
ns typ
RL = 50 Ω, CL = 35 pF
VS = 3 V, see Figure 18
RL = 50 Ω, CL = 35 pF
VS = 3 V, see Figure 18
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 3 V,
see Figure 19
0.005
2.5
Break-Before-Make Time Delay, tBBM
11
15
9
13
5
Charge Injection
Off Isolation
50
–64
ns min
pC typ
dB typ
Channel-to-Channel Crosstalk
–64
dB typ
Bandwidth: –3 dB
Insertion Loss
THD + N
38
0.04
0.01
MHz typ
dB typ
%
CS (Off )
CD, CS (On)
POWER REQUIREMENTS
IDD
52
145
pF typ
pF typ
0.001
µA typ
µA max
tOFF
VDD = 5.5 V
VS = 4.5 V/1 V, VD = 1 V/4.5 V,
see Figure 16
VS = VD = 1 V, or VS = VD = 4.5 V,
see Figure 17
17
18
14
15
1
VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
RL = 50 Ω, CL = 5 pF, f = 100 kHz
see Figure 21
RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 22
RL = 50 Ω, CL = 5 pF, see Figure 23
RL = 50 Ω, CL = 5 pF, see Figure 23
RL = 32 Ω, f = 20 Hz to 20 kHz,
Vs = 2 V p-p
VDD = 5.5 V, Digital Inputs = 0 V or 5.5 V
1.0
1
The temperature range for the Y version is –40°C to +125°C.
Guaranteed by design, not subject to production test.
2
Rev. 0| Page 3 of 12
ADG849
Table 2. VDD = 2.7 V to 3.6 V, GND = 0 V1
Parameter
ANALOG SWITCH
Analog Signal Range
On-Resistance (RON)
On-Resistance Match Between Channels
(∆RON)
On-Resistance Flatness (RFLAT(ON))
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Channel On Leakage, ID, IS (On)
+25°C
–40°C to
+85°C
0 V to VDD
0.72
1.1
1.1
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON
tOFF
Break-Before-Make Time Delay, tBBM
1.2
0.05
0.095
0.3
0.11
0.125
±0.1
±0.01
Test Conditions/Comments
V
Ω typ
Ω max
VS = 0 V to VDD, IDS = –100 mA
See Figure 15
Ω typ
VS = 1.5 V, IDS = –100 mA
Ω max
Ω typ
V min
V max
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
±0.1
ns typ
ns max
ns typ
ns max
ns typ
RL = 50 Ω, CL = 35 pF
VS = 1.5 V, see Figure 18
RL = 50 Ω, CL = 35 pF
VS = 1.5 V, see Figure 18
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 1.5 V,
see Figure 19
2.5
24
26
20
22
1
Charge Injection
Off Isolation
30
–64
ns min
pC typ
dB typ
Channel-to-Channel Crosstalk
–64
dB typ
Bandwidth: –3 dB
Insertion Loss
THD + N
38
0.04
0.02
MHz typ
dB typ
%
CS (Off )
CD, CS (On)
POWER REQUIREMENTS
55
147
pF typ
pF typ
IDD
VS = 0 V to VDD, IDS = –100 mA
VDD = 3.6 V
VS = 3 V/1 V, VD = 1 V/3 V, see Figure 16
VS = VD = 1 V, or VS = VD = 3 V;
see Figure 17
2.0
0.8
0.7
0.005
16
22
13
18
7
Unit
nA typ
nA typ
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
–40°C to
+125°C
0.001
1.0
1
The temperature range for the Y version is –40°C to +125°C.
Guaranteed by design, not subject to production test.
2
Rev. 0| Page 4 of 12
µA typ
µA max
VDD = 3 V to 3.6 V
VDD = 2.7 V
VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 21
RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 22
RL = 50 Ω, CL = 5 pF, see Figure 23
RL = 50 Ω CL = 5 pF, see Figure 23
RL = 32 Ω, f = 20 Hz to 20 kHz,
Vs = 1 V p-p
f = 1 MHz
f = 1 MHz
VDD = 3.6 V
Digital Inputs = 0 V or 3.6 V
ADG849
ABSOLUTE MAXIMUM RATINGS
Table 3. TA = 25°C, unless otherwise noted
Parameter
VDD to GND
Analog Inputs1
Digital Inputs
1
Peak Current, S or D
Continuous Current, S or D
Operating Temperature Range
Extended
Storage Temperature Range
Junction Temperature
SC70 Package
θJA Thermal Impedance
θJC Thermal Impedance
Reflow Soldering
Peak Temperature
Time at Peak Temperature
1
Rating
–0.3 V to +7 V
–0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
–0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
600 mA (pulsed at 1 ms,
10% duty cycle maximum)
400 mA
–40°C to +125°C
–65°C to +150°C
+150°C
Table 4. Truth Table
IN
0
1
Switch S1
On
Off
Switch S2
Off
On
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
332°C/W
120°C/W
260(0/–5)°C
10 sec to 40 sec
Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0| Page 5 of 12
ADG849
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
IN 1
ADG849
6
S2
D
TOP VIEW 5
(Not to Scale)
GND 3
4 S1
04737-0-002
VDD 2
Figure 2. Pin Configuration
Table 5. Terminology
Mnemonic
VDD
GND
IDD
S
D
IN
RON
∆RON
RFLAT(ON)
IS (Off )
ID, IS (On)
VD (VS)
VINL
VINH
IINL (IINH)
CS (Off )
CD, CS (On)
tON
tOFF
tBBM
Charge
Injection
Crosstalk
Off Isolation
Bandwidth
On-Response
Insertion Loss
THD + N
Function
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Positive Supply Current.
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
Ohmic Resistance between D and S.
On-Resistance Match Between any Two Channels i.e., RON Maximum to RON Minimum.
Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the
specified analog signal range.
Source Leakage Current with the Switch Off.
Channel Leakage Current with the Switch On.
Analog Voltage on Terminals D, S.
Maximum Input Voltage for Logic 0.
Minimum Input Voltage for Logic 1.
Input Current of the Digital Input.
Off Switch Source Capacitance. Measured with reference to ground.
On Switch Capacitance. Measured with reference to ground.
Delay time between the 50% and 90% points of the digital input and switch on condition.
Delay time between the 50% and 90% points of the digital input and switch off condition.
On or off time measured between the 80% points of both switches when switching from one to another.
A measure of the glitch impulse transfered from the digital input to the analog output during switching.
A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.
A measure of unwanted signal coupling through an off switch.
The frequency at which the output is attenuated by 3 dB.
The frequency response of the on switch.
The loss due to the on-resistance of the switch.
The ratio of harmonic amplitudes plus the noise of a signal to the fundamental.
Rev. 0| Page 6 of 12
ADG849
TYPICAL PERFORMANCE CHARACTERISTICS
1.0
0.6
TA = 25°C
0.9
0.5
0.8
4.5V
RON (Ω)
ON RESISTANCE (Ω)
5V
0.4
5.5V
0.3
0.2
+125°C
0.7
+85°C
0.6
+25°C
0.5
–40°C
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
VS/VD (V)
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VS/VD (V)
Figure 3. On-Resistance vs. VD/VS, VDD = 5 V ±10%
04737-0-006
0
04737-0-003
0.1
Figure 6. On-Resistance vs. Temperature, VDD = 3 V
0.9
120
VDD = 5V
0.8
100
2.5V
0.7
RON (Ω)
3V
LEAKAGE (nA)
2.7V
0.6
3.3V
0.5
3.6V
0.4
0.3
80
60
ID, IS (ON)
40
0.2
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VS/VD (V)
04737-0-004
0
0
10
Figure 4. On-Resistance vs. VD/VS, VDD = 2.5 V to 3.6 V
20
40
60
80
TEMPERATURE (°C)
100
120
04737-0-017
IS (OFF)
0.1
Figure 7. Leakage Currents vs. Temperature, VDD = 5 V
0.8
90
0.7
80
VDD = 3V
70
+125°C
LEAKAGE (nA)
+85°C
0.5
+25°C
0.4
–40°C
0.3
0.2
60
ID, IS (ON)
50
40
30
20
IS (OFF)
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VS/VD (V)
5.0
0
10
Figure 5. On-Resistance vs. Temperature, VDD = 5 V
20
40
60
80
TEMPERATURE (°C)
100
120
Figure 8. Leakage Currents vs. Temperature, VDD = 3 V
Rev. 0| Page 7 of 12
04737-0-018
10
04737-0-005
ON RESISTANCE (Ω)
0.6
ADG849
0
250
TA = 25°C
–10
VDD = 5V
–20
OFF ISOLATION (dB)
150
100
–30
–40
–50
–60
–70
50
VDD = 3V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
DRAIN VOLTAGE (V)
04737-0-011
–80
TA = 25°C
VDD = 5V/3V
–90
10k
100k
20
–10
VDD = 3.3V
tON
–20
tOFF
CROSSTALK (dB)
TIME (ns)
100M
0
18
14
10M
Figure 12. Off Isolation vs. Frequency
Figure 9. Charge Injection
16
1M
FREQUENCY (MHz)
04737-0-014
CHARGE INJECTION (pC)
200
VDD = 5V
12
tON
10
tOFF
8
6
–30
–40
–50
–60
–70
–20
0
20
40
60
TEMPERATURE (°C)
80
100
120
TA = 25°C
VDD = 5V/3V
–80
10k
100k
0
0.09
–1
0.08
–2
0.07
THD + N (%)
0.10
–3
–4
–5
0.04
–7
0.02
–8
0.01
TA = 25°C
VDD = 5V/3V
1M
FREQUENCY (MHz)
10M
100M
VDD = 5V
0.05
0.03
100k
100M
0.06
–6
04737-0-013
ON RESPONSE (dB)
1
10k
10M
Figure 13. Crosstalk vs. Frequency
Figure 10. tON/tOFF vs. Temperature
–9
1M
FREQUENCY (MHz)
0
20
1V p-p
2V p-p
40
60
80
100
120
140
160
180
FREQUENCY (kHz)
Figure 11. Bandwidth
Figure 14. Total Harmonic Distortion + Noise
Rev. 0| Page 8 of 12
200
04737-0-019
0
–40
04737-0-012
2
04737-0-015
4
ADG849
TEST CIRCUITS
IDS
ID (OFF)
S
D
RON = V1/IDS
Figure 15. On-Resistance
ID (ON)
S
NC
D
Figure 17. On-Leakage
Figure 16. Off-Leakage
VDD
0.1µF
VDD
S2
S1
VS
VOUT
D
RL
50Ω
IN
50%
VIN
CL
35pF
50%
90%
90%
GND
tON
tOFF
04449-0-022
VOUT
Figure 18. Switching Times, tON, tOFF
VDD
0.1µF
50%
VDD
S2
S1
VS
VIN
80%
tBBM
tBBM
04449-0-023
IN
80%
CL
35pF
RL
50Ω
50%
0V
VOUT
VOUT
D
GND
Figure 19. Break-Before-Make Time Delay, tBBM
VDD
SW ON
SW OFF
VIN
S2
NC
D
VS
S1
VOUT
1nF
IN
VOUT
∆VOUT
QINJ = CL × ∆VOUT
GND
Figure 20. Charge Injection
Rev. 0| Page 9 of 12
A
VD
04449-0-024
VS
VD
04737-0-008
S
VS
04737-0-009
V1
D
04449-0-021
IS (OFF)
ADG849
VDD
VDD
0.1µF
0.1µF
NETWORK
ANALYZER
VDD
S2
S1
50Ω
VDD
S1
VOUT
50Ω
RL
50Ω
VS
D
R
50Ω
S2
D
VOUT
50Ω
GND
GND
VOUT
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
VS
Figure 21. Off Isolation
VOUT
VS
Figure 22. Channel-to-Channel Crosstalk
VDD
0.1µF
NETWORK
ANALYZER
VDD
S2
50Ω
S1
VS
D
RL
50Ω
GND
INSERTION LOSS = 20 LOG
VOUT
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
Figure 23. Bandwidth
Rev. 0| Page 10 of 12
04449-0-026
OFF ISOLATION = 20 LOG
VS
04737-0-016
RL
50Ω
04449-0-025
NC
NETWORK
ANALYZER
ADG849
OUTLINE DIMENSIONS
2.00 BSC
6
5
4
1
2
3
2.10 BSC
1.25 BSC
PIN 1
0.65 BSC
1.30 BSC
1.00
0.90
0.70
1.10 MAX
0.22
0.08
0.30
0.15
0.10 MAX
SEATING
PLANE
8°
4°
0°
0.46
0.36
0.26
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203AB
Figure 24. 6-Lead SC70 Package
[KS-6]
Dimensions shown in Millimeters
ORDERING GUIDE
Model
ADG849YKSZ-500RL72
ADG849YKSZ-REEL2
ADG849YKSZ-REEL72
1
2
Temperature Range
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
Package Description
SC70 (Plastic Surface Mount)
SC70 (Plastic Surface Mount)
SC70 (Plastic Surface Mount)
Branding on all packages is limited to three characters due to space constraints.
Z = Pb-free part.
Rev. 0| Page 11 of 12
Package
Option
KS-6
KS-6
KS-6
Branding1
SNA
SNA
SNA
ADG849
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D04737-0-7/04(0)
Rev. 0| Page 12 of 12