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HMC308 / 308E
v05.1107
Typical Applications
Features
Broadband or Narrow Band Applications:
Gain: 18 dB
• Cellular/PCS/3G
P1dB Output Power: +17 dBm@ +5V
• Fixed Wireless & Telematics
Single Supply: +3V or +5V
• Cable Modem Termination Systems
No External Components
• WLAN, Bluetooth & RFID
Integrated DC Blocks
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Ultra Small Package: SOT26
Functional Diagram
General Description
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The HMC308 & HMC308E are low cost MESFET
MMIC amplifiers that operate from a single +3 to
+5V supply from 0.8 to 3.8 GHz. The surface mount
SOT26 amplifier can be used as a broadband amplifier stage or used with external matching for optimized narrow band applications. With Vdd biased at
+5V, the HMC308 & HMC308E offers 18 dB of gain
and +20 dBm of saturated output power while requiring only 53 mA of current. This amplifier is ideal as
a driver amplifier for transmitters or for use as a
local oscillator (LO) amplifier to increase drive levels
for passive mixers. The amplifier occupies 0.014 in2
(9 mm2), making it ideal for compact radio designs.
Electrical Specifi cations, TA = +25° C, as a function of Vdd
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DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Vdd = +3V
Vdd = +5V
Vdd = +5V
Vdd = +5V
Parameter
Units
Min.
Frequency Range
Gain
Max.
Min.
2.3 - 2.7
13
Gain Variation over Temperature
Max.
Min.
0.8 - 2.3
15.5
0.025
Typ.
14
0.035
Max.
Min.
2.3 - 2.7
18
0.025
Typ.
13
0.035
16
0.025
10
0.035
Typ.
Max.
2.7 - 3.8
GHz
13
dB
0.025
0.035
dB/°C
Input Return Loss
11
8
11
13
dB
Output Return Loss
17
13
12
13
dB
12
15
dBm
17
dBm
24
27
dBm
Output Power for 1 dB
Compression (P1dB)
12
14
23
26
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
9-2
Typ.
14
17
27
30
17
13.5
20
16.5
19.5
26
29
Noise Figure
7
7.5
7
7
dB
Supply Current (Idd)
50
53
53
53
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
P1dB vs. Vdd Bias
20
20
10
16
S11
S21
S22
0
4
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
5
24
GAIN (dB)
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+25 C
+85 C
-40 C
1
1.5
2
2.5
3
3.5
3.5
4
16
12
+25 C
+85 C
-40 C
8
4
0
0.5
4
Input & Output
Return Loss vs. Vdd Bias
1
1.5
0
-5
-10
REVERSE ISOLATION (dB)
0
-10
-15
-20
-25
S11 Vdd=+5V
S22 Vdd=+5V
S11 Vdd=+3V
S22 Vdd=+3V
-30
1
1.5
2
2.5
FREQUENCY (GHz)
2
2.5
3
3.5
4
3.5
4
FREQUENCY (GHz)
Reverse Isolation vs. Vdd Bias
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RETURN LOSS (dB)
3
Gain vs. Temperature @ Vdd = +3V
FREQUENCY (GHz)
-35
0.5
2.5
20
16
0
0.5
2
24
20
4
1.5
FREQUENCY (GHz)
Gain vs. Temperature @ Vdd = +5V
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FREQUENCY (GHz)
12
Vdd=+5V
Vdd=+3V
8
-20
-30
0.5
12
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-10
9
3
3.5
4
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
24
P1dB (dBm)
30
GAIN (dB)
RESPONSE (dB)
Broadband Gain
& Return Loss @ Vdd = +5V
Vdd=+5V
Vdd=+3V
-20
-30
-40
-50
-60
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9-3
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Power Compression
@ 2.0 GHz, Vdd = +5V
28
20
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
24
16
12
4
0
-4
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
4
0
-6
-4
-2
0
+25 C
+85 C
-40 C
1
1.5
2
2.5
3
3.5
4
Output IP3
vs. Temperature @ Vdd = +5V
6
16
+25 C
+85 C
-40 C
12
8
4
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
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Typical Supply Current vs. Vdd
38
Vdd (Vdc)
Idd (mA)
34
+2.5
49
30
+3.0
50
26
+3.5
51
22
+4.5
50
+5.0
53
+5.5
54
+25 C
+85 C
-40 C
18
14
10
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
9-4
4
20
FREQUENCY (GHz)
6
0.5
2
Output P1dB vs.
Temperature @ Vdd = +5V
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Psat (dBm)
8
24
20
4
0.5
12
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24
8
16
INPUT POWER (dBm)
Psat vs. Temperature @ Vdd = +5V
12
Pout
Gain
PAE
20
-4
-20 -18 -16 -14 -12 -10 -8
6
INPUT POWER (dBm)
16
24
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P1dB (dBm)
Pout (dBm), GAIN (dB), PAE (%)
28
IP3 (dBm)
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
Power Compression
@ 2.5 GHz, Vdd = +5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
-4
-2
0
2
4
8
4
0
-4
-20 -18 -16 -14 -12 -10 -8
6
-4
-2
0
2
4
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+25 C
+85 C
-40 C
1
1.5
2
2.5
3
3.5
4
Output IP3
vs. Temperature @ Vdd = +3V
12
+25 C
+85 C
-40 C
8
4
0.5
1
1.5
2
2.5
3
3.5
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Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
34
RF Input Power (RFIN)(Vdd = +5Vdc)
+10 dBm
30
Channel Temperature
150 °C
26
Continuous Pdiss (T = 85 °C)
(derate 6.25 mW/°C above 85 °C)
0.406 W
Thermal Resistance
(channel to lead)
160 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
22
18
+25 C
+85 C
-40 C
14
10
1
1.5
2
2.5
3
4
FREQUENCY (GHz)
38
6
0.5
6
16
FREQUENCY (GHz)
IP3 (dBm)
-6
Output P1dB vs.
Temperature @ Vdd = +3V
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Psat (dBm)
12
20
20
4
0.5
16
24
24
8
20
INPUT POWER (dBm)
Psat vs. Temperature @ Vdd = +3V
12
Pout
Gain
PAE
3.5
+7.0 Vdc
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
-6
24
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Pout
Gain
PAE
INPUT POWER (dBm)
16
9
28
Pout (dBm), GAIN (dB), PAE (%)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-20 -18 -16 -14 -12 -10 -8
Power Compression
@ 2.5 GHz, Vdd = +3V
P1dB (dBm)
Pout (dBm), GAIN (dB), PAE (%)
Power Compression
@ 2.0 GHz, Vdd = +3V
4
FREQUENCY (GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9-5
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Outline Drawing
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NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
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5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND
Package Information
Part Number
Package Body Material
Lead Finish
HMC308
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC308E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
MSL Rating
Package Marking [3]
[1]
H308
XXXX
[2]
308E
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
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DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
Pin Descriptions
9-6
Pin Number
Function
Description
1
RFOUT
This pin is AC coupled and matched to 50 Ohms.
2, 5, 6
GND
These pins must be connected to RF/DC ground.
3
Vdd
Power supply voltage.
4
RFIN
This pin is AC coupled and matched to 50 Ohms.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Evaluation PCB
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List of Materials for Evaluation PCB 103802 [1]
Item
Description
J1, J2
PCB Mount SMA Connector
J3, J4
DC Pins
U1
HMC308 / HMC308E Amplifier
PCB [2]
103220 Evaluation Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
The circuit board used in the final application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A sufficient number of
via holes should be used to connect the top and
bottom ground planes. The evaluation circuit board
shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
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