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HMC1014
v00.0312
Typical Applications
Features
The HMC1014 is ideal for:
P1dB Output Power: +24.5 dBm
• Point-to-Point Radios
Psat Output Power: +27.5 dBm
• Point-to-Multi-Point Radios
High Gain: 21 dB
• VSAT & SATCOM
Output IP3: +35 dBm
• Military & Space
Supply Voltage: Vdd = +6V @ 500 mA
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50 Ohm Matched Input/Output
Die Size: 2.76 x 1.6 x 0.1 mm
Functional Diagram
General Description
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The HMC1014 is a four stage GaAs pHEMT MMIC
Medium Power Amplifier die which operates between
33.5 and 46.5 GHz. The amplifier provides 21 dB of
gain, +27.5 dBm of saturated output power, and 27%
PAE from a +6V supply. With up to +35 dBm OIP3
the HMC1014 is ideal for high linearity applications in
miltary and space as well as point-to-point and pointto-multi-point radios. The HMC1014 amplifier I/Os are
internally matched facilitating integration into mutlichip-modules (MCMs). All data shown herein was
measured with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
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Amplifiers - Linear & Power - CHIP
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Electrical Specifications, TA = +25° C, Vdd1 - Vdd8 = +6V, Idd = 500 mA [1]
Min.
O
Parameter
Frequency Range
Max.
Min.
33.5 - 43
Gain
18
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
21
22
Saturated Output Power (Psat)
[2]
Total Supply Current
Typ.
43 - 46.5
18
Max.
Units
GHz
21
dB
0.029
0.035
dB/ °C
25
32
dB
18
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Typ.
17
dB
23.5
dBm
27.5
26.5
dBm
35
34
dBm
500
500
mA
24.5
21
[1] Adjust Vgg between -2 to 0V to achieve Idd = 500 mA typical.
[2] Measurement taken at Pout / tone = +15 dBm.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Gain & Return Loss
Gain vs. Temperature
20
+25 C
+85 C
-55 C
26
S21
S11
S22
24
GAIN (dB)
0
-10
-20
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18
-40
-50
16
31
33
35
37
39
41
43
45
47
33
49
FREQUENCY (GHz)
35
37
41
43
45
47
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0
Output Return Loss vs. Temperature
0
+25 C
+85 C
-55 C
-20
-30
-40
-50
33
35
37
39
41
+25 C
+85 C
-55 C
-10
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-10
43
45
-20
-30
-40
47
33
35
37
FREQUENCY (GHz)
39
41
43
45
47
45
47
FREQUENCY (GHz)
P1dB vs Supply Voltage
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P1dB vs. Temperature
29
29
+25C
+85C
-55C
5V
5.5V
6V
27
P1dB (dBm)
27
P1dB (dBm)
39
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
22
20
-30
RESPONSE (dB)
RESPONSE (dB)
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Amplifiers - Linear & Power - CHIP
28
30
25
23
21
25
23
21
19
19
33
35
37
39
41
FREQUENCY (GHz)
43
45
47
33
35
37
39
41
43
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
27
27
Psat (dBm)
29
25
23
23
5V
5.5V
6V
21
19
19
33
35
37
39
41
43
45
47
33
35
37
41
43
45
47
45
47
45
47
Psat vs. Supply Current
P1dB vs. Supply Current
29
29
400 mA
450 mA
500 mA
25
23
21
19
33
27
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27
35
37
39
41
43
45
25
23
400 mA
450 mA
500 mA
21
19
47
33
35
37
FREQUENCY (GHz)
41
43
Output IP3 vs. Supply Current,
Pout/tone = +15 dBm
43
39
39
35
35
IP3 (dBm)
43
31
+25 C
+85 C
-55 C
27
39
FREQUENCY (GHz)
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IP3 (dBm)
39
FREQUENCY (GHz)
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FREQUENCY (GHz)
Output IP3 vs. Temperature,
Pout/tone = +15 dBm
31
400 mA
450 mA
500 mA
27
23
23
33
35
37
39
41
FREQUENCY (GHz)
3
25
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+25 C
+85 C
-55 C
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
29
21
P1dB (dBm)
Amplifiers - Linear & Power - CHIP
Psat vs. Temperature
43
45
47
33
35
37
39
41
43
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Output IP3 vs. Supply Voltage,
Pout/tone = +15 dBm
Output IM3 @ Vdd = +5V
43
50
39
IM3 (dBc)
IP3 (dBm)
40
35
31
30
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
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20
5V
5.5V
6V
27
10
23
0
33
35
37
39
41
43
45
47
10
FREQUENCY (GHz)
14
16
20
22
24
20
22
24
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Output IM3 @ Vdd = +6V
60
60
50
50
40
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
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0
10
12
14
16
18
20
22
IM3 (dBc)
30
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40
20
30
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
20
10
0
24
10
12
14
16
Pout/TONE (dBm)
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30
Pout (dBm), Gain (dB), PAE (%)
30
25
20
15
Pout
Gain
PAE
10
18
Pout/TONE (dBm)
Power Compression @ 40 GHz
Power Compression @ 34 GHz
Pout (dBm), Gain (dB), PAE (%)
18
Pout/TONE (dBm)
Output IM3 @ Vdd =+5.5V
IM3 (dBc)
12
Amplifiers - Linear & Power - CHIP
60
5
25
20
15
Pout
Gain
PAE
10
5
0
0
-9
-6
-3
0
3
INPUT POWER (dBm)
6
9
12
-9
-6
-3
0
3
6
9
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Gain & Power vs.
Supply Current @ 40 GHz
Power Compression @ 46 GHz
35
Gain (dB), P1dB (dBm), Psat (dBm)
20
15
10
5
-9
-6
-3
0
3
6
GAIN(dB)
P1dB(dBm)
Psat(dBm)
30
25
20
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Pout
Gain
PAE
15
10
9
400
420
440
460
480
500
Idd (mA)
INPUT POWER (dBm)
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Gain & Power vs.
Supply Voltage @ 40 GHz
Reverse Isolation vs. Temperature
35
0
GAIN(dB)
P1dB(dBm)
Psat(dBm)
25
20
15
10
5
-10
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30
5.2
5.5
5.7
ISOLATION (dB)
Pout (dBm), Gain (dB), PAE (%)
25
0
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - CHIP
30
+25C
+85C
-55C
-20
-30
-40
-50
-60
6
33
35
37
Vdd (V)
39
41
43
45
47
FREQUENCY (GHz)
6
POWER DISSIPATION (W)
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Power Dissipation
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
5
4
3
2
1
0
-10
-6
-2
2
6
10
INPUT POWER (dBm)
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
+7 Vdc
RF Input Power (RFIN)
+18 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 48.3 mW/°C above
85 °C)
3.14 W
Thermal Resistance
(channel to die bottom)
20.7 °C/W
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
Vdd (V)
Idd (mA)
+5
500
+5.5
500
+6
500
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Drain Bias Voltage (Vdd)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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Outline Drawing
Amplifiers - Linear & Power - CHIP
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Function
Description
Interface Schematic
1
RFIN
RF signal input. This pin is AC coupled and matched to 50
Ohms over the operating frequency range.
2, 12
Vgg1, Vgg2
Gate control for amplifier. Amplifier can be biased by either
Vgg1 or Vgg2. External bypass capacitors of 100 pF,
0.01uF, and 4.7 uF capacitors are required.
3, 4, 5, 6
Vdd1-4
Drain bias voltage for the top half of the amplifier. External
bypass capacitors of 100 pF required for each pin, followed
by common 0.01uF and 4.7 uF Capacitors
7
RFOUT
RF signal output. This pad is AC coupled and matched to
50 Ohms over the operating frequency range.
8, 9, 10, 11
Vdd5-8
Drain bias voltage for the bottom half of the amplifier.
External bypass capacitors of 100 pF required for each pin
followed by common 0.01 uF and 4.7 uF capacitors.
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Pin Number
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Application Circuit
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Amplifiers - Linear & Power - CHIP
Pin Descriptions
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Amplifiers - Linear & Power - CHIP
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Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
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50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Handling Precautions
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Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
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Amplifiers - Linear & Power - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
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The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1014
v00.0312
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Amplifiers - Linear & Power - CHIP
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Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10