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HMC943LP5E
v02.0113
Typical Applications
Features
The HMC943LP5E is ideal for:
Saturated Output Power: +34 dBm @ 24% PAE
• Point-to-Point Radios
High Output IP3: +41 dBm
• Point-to-Multi-Point Radios
High Gain: 21 dB
• VSAT
DC Supply: +5.5V @ 1200 mA
• Military & Space
No External Matching Required
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32 Lead 5 x 5 mm SMT Package: 25 mm²
Functional Diagram
General Description
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The HMC943LP5E is a four stage GaAs pHEMT
MMIC 1.5 Watt Power Amplifier which operates between 24 and 31.5 GHz. The HMC943LP5E provides
21 dB of gain, and +34 dBm of saturated output power
and 24% PAE from a +5.5V supply. The high output
IP3 of +41 dBm makes the HMC943LP5E ideal for
microwave radio applications. The HMC943LP5E
amplifier I/Os are internally matched to 50 Ohms
and is packaged in a leadless QFN 5 x 5 mm surface
mount package and requires no external matching
components.
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Amplifiers - Linear & Power - SMT
GaAs pHEMT MMIC 1.5 WATT
POWER AMPLIFIER, 24 - 31.5 GHz
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Electrical Specifications, TA = +25° C, Vd1 = Vd8 = +5.5V, Idd = 1200 mA [1]
Parameter
Min.
Frequency Range
Gain
18
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Typ.
Max.
Min.
24 - 26.5
21
16
Max.
Units
GHz
19
dB
0.03
0.028
dB/ °C
9
9.5
dB
12
29
Typ.
26.5 - 31.5
32
27
12
dB
31
dBm
Saturated Output Power (Psat)
33
33
dBm
Output Third Order Intercept (IP3)[2]
41
39
dBm
1200
1200
mA
Total Supply Current (Idd)
[1] Adjust Vg1 and Vg2 between -2 to 0V to achieve Idd = 1200 mA typical.
[2] Measurement taken at +5.5V @ 1200 mA, Pout / Tone = +22 dBm
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC943LP5E
v02.0113
GaAs pHEMT MMIC 1.5 WATT
POWER AMPLIFIER, 24 - 31.5 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
26
10
GAIN (dB)
0
-10
22
18
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RESPONSE (dB)
20
-20
14
-30
23
20
22
24
26
28
30
32
FREQUENCY (GHz)
S21
34
36
38
25
26
S22
28
29
30
31
32
33
34
+85 C
-40 C
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Output Return Loss vs. Temperature
0
0
-12
-16
-20
23
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-8
24
25
26
27
28
29
30
31
32
33
RETURN LOSS (dB)
-4
-4
-8
-12
-16
-20
23
34
24
25
26
FREQUENCY (GHz)
+25 C
+85 C
32
33
+85 C
34
-40 C
P1dB vs. Supply Voltage
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37
27 28 29 30 31
FREQUENCY (GHz)
+25 C
-40 C
P1dB vs. Temperature
37
35
P1dB (dBm)
35
P1dB (dBm)
27
FREQUENCY (GHz)
+25 C
S11
Input Return Loss vs. Temperature
RETURN LOSS (dB)
24
Amplifiers - Linear & Power - SMT
30
30
33
31
29
33
31
29
27
27
24
25
26
27
28
29
30
31
32
33
24
25
26
+25 C
+85 C
27
28
29
30
31
32
33
FREQUENCY (GHz)
FREQUENCY (GHz)
-40 C
+5.0V
+5.5V
+6.0V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC943LP5E
v02.0113
GaAs pHEMT MMIC 1.5 WATT
POWER AMPLIFIER, 24 - 31.5 GHz
37
37
Psat (dBm)
39
35
33
35
33
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31
29
29
24
25
26
27
28
29
30
31
32
33
24
FREQUENCY (GHz)
+85 C
25
26
+5.0V
-40 C
+5.5V
32
33
+6.0V
39
37
37
35
31
27
24
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33
29
25
26
27
28
29
30
31
32
35
33
31
29
24
33
25
26
FREQUENCY (GHz)
1000 mA
1200 mA
27
28
29
30
FREQUENCY (GHz)
1000 mA
1300 mA
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50
31
1200 mA
32
33
1300 mA
Output IP3 vs.
Supply Current, Pout/Tone = +22 dBm
50
45
45
IP3 (dBm)
IP3 (dBm)
31
Psat vs. Supply Current (Idd)
P1dB vs. Supply Current (Idd)
Output IP3 vs.
Temperature, Pout/Tone = +22 dBm
40
35
30
40
35
30
25
25
24
25
26
27
28
29
30
31
32
33
24
25
26
+25 C
+85 C
27
28
29
30
31
32
33
FREQUENCY (GHz)
FREQUENCY (GHz)
3
27
28
29
30
FREQUENCY (GHz)
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+25 C
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
39
31
P1dB (dBm)
Amplifiers - Linear & Power - SMT
Psat vs. Temperature
-40 C
1000 mA
1200 mA
1300 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC943LP5E
v02.0113
GaAs pHEMT MMIC 1.5 WATT
POWER AMPLIFIER, 24 - 31.5 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +22 dBm
Output IM3 @ Vdd = +5V
60
50
45
IM3 (dBc)
IP3 (dBm)
40
40
35
30
20
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30
10
25
0
27
28
29
30
31
32
33
34
15
FREQUENCY (GHz)
18
+5.5V
+6.0V
20
21
22
23
24
25
24 GHz
26 GHz
28 GHz
30 GHz
32 GHz
Output IM3 @ Vdd = +6V
60
60
50
50
20
10
0
15
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30
16
17
18
19
20
21
22
23
24
IM3 (dBc)
40
40
30
20
10
0
15
25
16
17
18
24 GHz
26 GHz
28 GHz
30 GHz
24 GHz
26 GHz
32 GHz
20
21
22
23
24
25
28 GHz
30 GHz
32 GHz
Power Compression @ 29 GHz
Power Compression @ 24 GHz
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36
19
Pout/TONE (dBm)
Pout/TONE (dBm)
32
36
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
19
Pout/TONE (dBm)
Output IM3 @ Vdd = +5.5V
IM3 (dBc)
17
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+5.0V
16
Amplifiers - Linear & Power - SMT
50
28
24
20
16
12
8
4
32
28
24
20
16
12
8
4
0
0
0
3
6
9
12
INPUT POWER (dBm)
Pout
Gain
15
18
PAE
0
3
6
9
12
INPUT POWER (dBm)
Pout
Gain
15
18
PAE
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC943LP5E
v02.0113
GaAs pHEMT MMIC 1.5 WATT
POWER AMPLIFIER, 24 - 31.5 GHz
Power Compression @ 32 GHz
Reverse Isolation
-10
ISOLATION (dB)
28
24
20
16
12
-20
-30
-40
-50
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8
-60
4
-70
0
3
6
9
12
15
18
21
27
INPUT POWER (dBm)
Pout
Gain
PAE
+25 C
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SO
30
1000
31
32
33
34
+85 C
-40 C
40
35
15
30
Gain & Power vs.
Supply Voltage @ 26 GHz
40
20
29
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Gain & Power vs.
Supply Current @ 26 GHz
25
28
FREQUENCY (GHz)
1100
1200
1300
Gain (dB), P1dB (dBm), Psat (dBm)
Pout (dBm), GAIN (dB), PAE (%)
0
32
0
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - SMT
36
35
30
25
20
15
5
5.5
Idd (mA)
Gain
P1dB
6
Vdd (V)
Psat
Gain
P1dB
Psat
Power Dissipation @ 6V, 1200 mA
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POWER DISSIPATION (W)
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10
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
INPUT POWER (dBm)
Max Pdis @ 85C
25GHz
26GHz
5
27GHz
28GHz
29GHz
10
11 12
13
30GHz
31GHz
32GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC943LP5E
v02.0113
GaAs pHEMT MMIC 1.5 WATT
POWER AMPLIFIER, 24 - 31.5 GHz
Drain Bias Voltage (Vd)
+7V
RF Input Power (RFIN)
Channel Temperature
Vdd (V)
Idd (mA)
+20 dBm
+5.0
1200
150 °C
+5.5
1200
+6.0
1200
Continuous Pdiss (T= 85 °C)
(derate 135 mW/°C above 85 °C)
8.8 W
Thermal Resistance
(channel to package bottom)
7.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 0, 150V
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Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1200 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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Outline Drawing
Amplifiers - Linear & Power - SMT
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC
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SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. PAD BURR LENGTHSHALL BE 0.15mm MAX. PAD BURR HIEGHT SHALL
BE 0.25mm MAX.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
Package Information
TO PCB RF GROUND.
Part Number
Package Body Material
Lead Finish
HMC943LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[2]
Package Marking [1]
H943
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC943LP5E
v02.0113
GaAs pHEMT MMIC 1.5 WATT
POWER AMPLIFIER, 24 - 31.5 GHz
Function
Description
Interface Schematic
1, 3, 5, 8, 9,
16, 17, 20, 22,
24, 25, 32
GND
These pins and package bottom must
be connected to RF/DC ground.
2, 6, 7, 14, 18,
19, 23, 27
N/C
These pins are not connected internally;however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
4
RFIN
RF signal input. This pad is AC coupled and matched
to 50 Ohms over the operating frequency range.
10, 31
VG1, VG2
Gate control for amplifier. External bypass capacitors
of 100 pF, 0.01 µF, and 4.7 µF are required on each.
11 - 13, 15,
26, 28 - 30
VD2, VD4, VD6,
VD8, VD7, VD5,
VD3, VD1
Drain bias for the amplifier. External bypass capacitors
of 100 pF, 0.01 µF, and 4.7 µF are required on each.
21
RFOUT
RF signal output. This pad is AC coupled and matched to
50 ohms over the operating frequency range.
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Pin Number
Application Circuit
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Amplifiers - Linear & Power - SMT
Pin Descriptions
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC943LP5E
v02.0113
GaAs pHEMT MMIC 1.5 WATT
POWER AMPLIFIER, 24 - 31.5 GHz
Amplifiers - Linear & Power - SMT
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Evaluation PCB
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List of Materials for Evaluation PCB 130027 [1]
Item
Description
J1, J2
SRI, K Connectors
J3, J4
DC Pins
C1 - C10
100 pF Capacitors, 0402 Pkg.
C11 - C20
10000 pF Capacitors, 0402 Pkg.
C21 - C30
4.7 µF Capacitors, Case A Pkg.
U1
HMC943LP5E Power Amplifier
PCB [2]
130025 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon FR4
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8