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HMC755LP4E
v05.0312
Typical Applications
Features
The HMC755LP4E is Ideal for:
High Gain: 31 dB
• Cellular/3G & LTE/4G
High PAE: 28% @ +33 dBm Pout
• WiMAX, WiBro & Fixed Wireless
Low EVM: 2.5% @ +25 dBm Pout
with 54 Mbps OFDM Signal
• Military & SATCOM
High Output IP3: +43 dBm
• Test Equipment
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Integrated Detector & Power Control
24 Lead 4x4mm QFN Package: 16mm²
Functional Diagram
General Description
LE
The HMC755LP4E is a high gain, high linearity GaAs
InGaP HBT MMIC Power amplifier covering 2.3 to
2.8 GHz. The amplifier provides 31 dB of gain and
+33 dBm of saturated power from a single +5V
supply. The power control pins (VEN1, 2, 3) can be
used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated
output power detector (VDET) is internally coupled
and requires no external components. For +25 dBm
OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM)
of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN
SMT package and requires a minimum of external
matching components.
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Amplifiers - Linear & Power - SMT
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
Electrical Specifications, TA = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V
Parameter
Min.
O
Frequency Range
Gain
28
Gain Variation Over Temperature
Typ.
Max.
Units
2.3 - 2.8
GHz
31
dB
0.05
dB/ °C
Input Return Loss
10
dB
Output Return Loss
7
dB
Output Power for 1dB Compression (P1dB)
31
dBm
Saturated Output Power (Psat)
33
dBm
Output Third Order Intercept (IP3) [1]
43
dBm
Error Vector Magnitude @ 2.5 GHz
(54 Mbps OFDM Signal @ +24.5 dBm Pout)
2.5
%
Supply Current (Icc1 + Icc2 + Icc3)
28
400
480
600
mA
Control Current (Ien1 + Ien2 + Ien3)
16
mA
Bias Current (Ics)
12
mA
[1] Two-tone output power of +25 dBm per tone, 1 MHz spacing.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC755LP4E
v05.0312
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
40
30
35
20
30
10
GAIN (dB)
S21
S11
S22
-10
15
-20
10
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4
4.3
2
FREQUENCY (GHz)
2.2
2.4
2.6
2.8
3
3.2
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FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
-5
-10
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RETURN LOSS (dB)
+25 C
+85 C
- 40 C
20
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0
25
+25 C
+85 C
- 40 C
-15
-20
2
2.2
2.4
2.6
2.8
3
+25 C
+85 C
- 40 C
-5
-10
-15
2
3.2
2.2
2.4
2.6
2.8
3
3.2
FREQUENCY (GHz)
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
Gain vs. Temperature
40
RETURN LOSS (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
0
-10
ISOLATION (dB)
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Reverse Isolation vs. Temperature
-20
+25 C
+85 C
- 40 C
-30
-40
-50
-60
-70
2
2.2
2.4
2.6
2.8
3
3.2
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC755LP4E
v05.0312
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
35
35
Psat (dBm)
40
30
+25 C
+85 C
- 40 C
25
20
20
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
2.1
2.2
2.3
2.5
2.6
2.7
2.8
2.9
3
FREQUENCY (GHz)
Output IP3 vs. Temperature @ 26 dBm
50
Output IP3 vs. Temperature @ 2.4 GHz
50
45
40
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45
+25 C
+85 C
- 40 C
35
30
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
40
+25 C
+85 C
- 40 C
35
30
3
18
19
20
FREQUENCY (GHz)
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2.5
22
23
24
25
26
27
Power Compression @ 2.5 GHz
50
Pout (dBm), GAIN (dB), PAE (%)
3
21
SINGLE TONE POUT (dBm)
3.5
VDET (V)
2.4
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FREQUENCY (GHz)
VDET Output Voltage vs. Temperature
+25 C
+85 C
- 40 C
2
1.5
1
0.5
0
40
30
20
Pout
Gain
PAE
10
0
13
17
21
25
OUTPUT POWER (dBm)
3
30
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+25 C
+85 C
- 40 C
IP3 (dB)
P1dB (dBm)
Psat vs. Temperature
40
25
IP3 (dBm)
Amplifiers - Linear & Power - SMT
P1dB vs. Temperature
29
33
-20
-15
-10
-5
0
5
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC755LP4E
v05.0312
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
Gain & Power vs. Supply Voltage
Noise Figure vs. Temperature
NOISE FIGURE (dB)
10
40
Gain
P1dB
IP3
4
+25 C
+85 C
- 40 C
2
20
0
4.5
5
5.5
2.2
SUPPLY VOLTAGE (V)
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
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FREQUENCY (GHz)
EVM vs. Frequency
(54 Mbps OFDM Signal)
Power Dissipation
6
7
5.5
6
Max Pdiss @ +85C
5
5
4.5
4
3.5
3
2.5
2
-20
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POWER DISSIPATION (W)
6
TE
30
8
-15
-10
-5
0
5
4
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
3
2
1
0
15
17
INPUT POWER (dBm)
19
21
23
25
27
OUTPUT POWER (dBm)
Amplifiers - Linear & Power - SMT
12
EVM (%)
GAIN (dB), P1dB (dBm), IP3 (dBm)
50
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EVM vs. Temperature @ 2.5 GHz
(54 Mbps OFDM Signal)
7
6
EVM (%)
5
4
+25 C
+85 C
- 40 C
3
2
1
0
15
17
19
21
23
25
27
OUTPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC755LP4E
v05.0312
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
Typical Supply Current vs.
Supply Voltage
5.5V
Control Voltage (VEN1, 2, 3)
Vcc +0.5
Vcc (V)
Icq (mA)
4.5
430
RF Input Power (RFIN)(Vcc = +5V)
Junction Temperature
+5 dBm
5.0
480
150 °C
5.5
Continuous Pdiss (T = 85 °C)
(derate 80 mW/°C above 85 °C)
530
5.2 W
Thermal Resistance
(junction to ground paddle)
12.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1B
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Collector Bias Voltage (Vcc1, Vcc2, Vcc3)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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Outline Drawing
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Amplifiers - Linear & Power - SMT
Absolute Maximum Ratings
NOTES:
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1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC755LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL3
[2]
Package Marking [1]
H755
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC755LP4E
v05.0312
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
Pin Descriptions
1, 3, 5, 6, 12 - 14,
18, 19, 21, 22, 24
N/C
2
GND
Ground: Backside of package has exposed metal paddle
that must be connected to ground thru a short path.
Vias under the device are required.
4
RFIN
This pin is DC coupled
and matched to 50 Ohms.
7
VCS
DC power supply pin for bias circuitry.
VEN1 - 3
Power control pins. For max power these
pins should be connected to 5V. This voltage
can be reduced, or R1-R4 resistor values increased
to reduce the quiescent current.
For full power down, apply V <0.5V
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SO
8 - 10
Interface Schematic
VDET
DC voltage output proportional to RFOUT signal.
15, 16, 17
RFOUT
RF output and DC bias for the output stage. External
RF matching, bypass capacitors, and pull up choke are
required as shown in the application circuit.
O
11
20
Vcc2
Power supply voltage for the second amplifier stage.
External bypass capacitors and pull up choke are required
as shown in the application schematic.
23
Vcc1
Power supply voltage for the first amplifier stage. External
bypass capacitors are required as shown in the application
schematic.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Linear & Power - SMT
Description
These pins are not connected internally. However, all data
shown herein was measured with these pins connected to
RF/DC ground.
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Function
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Pin Number
6
HMC755LP4E
v05.0312
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
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Amplifiers - Linear & Power - SMT
Evaluation PCB
List of Materials for Evaluation PCB 123643
Item
Description
Item
Description
PCB Mount SMA Connector
U1
HMC755LP4E Power Amplifier
J3, J4
2MM Molex Header
PCB [2]
123641 Eval Board
C1 - C10
100 pF Capacitor, 0402 Pkg.
[1] Reference this number when ordering complete evaluation PCB
C11
3 pF Capacitor Ultra Low ESD, 0603 Pkg.
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
C12
1.5 pF Capacitor Ultra Low ESD, 0603 Pkg.
C13 - C15
1000 pF Capacitor, 0603 Pkg.
C16
2.2 µF Capacitor, Tantalum
C17
4.7 µF Capacitor, Tantalum
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J1, J2
7
[1]
C18 - C12
10000 pF Capacitor, 0402 Pkg.
L1
10 nH Inductor, 0603 Pkg.
R1
0 Ohm Resistor, 0402 Pkg.
R2
200 Ohm Resistor, 0402 Pkg.
R3
300 Ohm Resistor, 0402 Pkg.
R4
130 Ohm Resistor, 0402 Pkg.
The circuit board used in the application should
use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes and the evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC755LP4E
v05.0312
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
O
TL1
TL2
Impedance
28 Ohm
50 Ohm
Physical Length
0.0465”
0.1950”
Electrical Length @ 25 GHz
Measurement
5.9°
22.6°
Package edge to center of
capacitor C11
Center of capacitor C11 to
center of capacitor C12
Amplifiers - Linear & Power - SMT
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Application Circuit
PCB Material: 10 mil Rogers 4350 or Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8