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HMC718LP4 / 718LP4E
v01.1008
Typical Applications
Features
The HMC718LP4(E) is ideal for:
Noise Figure: 0.9 dB
• Cellular/3G and LTE/WiMAX/4G
Gain: 32 dB
• BTS & Infrastructure
Output IP3: +40 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Access Points
50 Ohm Matched Input/Output
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• Test Equipment
24 Lead 4x4 mm SMT Package: 16 mm2
Functional Diagram
General Description
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The HMC718LP4(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 600 and 1400 MHz. The amplifier
has been optimized to provide 0.9 dB noise figure,
32 dB gain and +40 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC718LP4(E) shares the same package and
pinout with the HMC719LP3(E) 1.3 - 2.9 GHz LNA.
The HMC718LP4(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
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Amplifiers - Low Noise - SMT
7
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
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Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms*
Parameter
Vdd = +3V
Min.
Frequency Range
Gain
Typ.
Max.
Min.
0.6 - 1.0
26
Typ.
Vdd = +5V
Max.
Min.
1.0 - 1.4
30.5
25
Typ.
Max.
Min.
0.6 - 1.0
27.5
27
32
25
Typ.
Max.
Units
1.0 - 1.4
GHz
29
dB
dB/ °C
Gain Variation Over Temperature
0.01
0.01
0.01
0.01
Noise Figure
0.95
0.75
0.95
0.8
dB
Input Return Loss
15
20
15.5
23
dB
Output Return Loss
13
10
15.5
13
dB
21.5
dBm
23.3
dBm
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
13
15.5
13
19
Output Third Order Intercept (IP3)
35
Supply Current (Idd)
187
15.7
19
19
187
19
23.5
34.5
200
21.5
40.5
200
254
40
281
254
dBm
281
mA
* Rbias resistor sets current, see application circuit herein
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
Broadband Gain & Return Loss [1] [2]
7
Gain vs. Temperature [1]
S21
30
GAIN (dB)
0
25
-20
S22
0.4
S11
0.6
0.8
1
1.2
1.4
FREQUENCY (GHz)
1.6
Gain vs. Temperature [2]
+25C
+85C
-40C
0.7
0.9
1.1
FREQUENCY (GHz)
1.3
1.5
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+25C
+85C
-40C
0.7
0.9
1.1
FREQUENCY (GHz)
1.3
1.5
Reverse Isolation vs. Temperature [1]
0
-10
+25C
+85C
-40C
ISOLATION (dB)
-5
-30
-50
0.5
0
RETURN LOSS (dB)
1.3
-20
-40
1.5
Output Return Loss vs. Temperature [1]
-10
-15
-20
-25
0.5
0.9
1.1
FREQUENCY (GHz)
-10
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GAIN (dB)
20
0.5
0.7
0
35
25
20
0.5
2
Input Return Loss vs. Temperature [1]
40
30
1.8
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-40
0.2
30
TE
-10
RETURN LOSS (dB)
RESPONSE (dB)
Vdd=5V
Vdd=3V
10
-30
+25C
+85C
-40C
35
20
Amplifiers - Low Noise - SMT
40
40
+25C
+85C
-40C
-20
-30
-40
-50
0.7
0.9
1.1
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 3.92K
1.3
1.5
-60
0.5
0.7
0.9
1.1
FREQUENCY (GHz)
1.3
1.5
[2] Vdd = 3V, Rbias = 3.92K
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-2
HMC718LP4 / 718LP4E
v01.1008
7
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
Noise Figure vs. Temperature [1] [2]
P1dB vs. Temperature [1] [2]
26
Vdd=5V
Vdd=3V
+85C
22
P1dB (dBm)
1.2
1
0.8
+25C
+85C
-40C
18
+25C
TE
0.4
14
-40C
Vdd=3V
12
0.5
0.2
0.7
0.9
1.1
FREQUENCY (GHz)
1.3
+25C
+85C
-40C
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Vdd=5V
Vdd=3V
IP3 (dBm)
45
22
12
0.5
1.1
1.3
1.5
50
24
14
0.9
Output IP3 vs. Temperature [1] [2]
26
18
0.7
FREQUENCY (GHz)
Psat vs. Temperature [1] [2]
20
1.5
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0.5
+25C
+85C
-40C
0.7
0.9
1.1
FREQUENCY (GHz)
1.3
Vdd=5V
40
35
30
Vdd=3V
25
0.5
1.5
Output IP3 and Idd vs.
Supply Voltage @ 700 MHz [3]
0.7
0.9
1.1
FREQUENCY (GHz)
1.3
1.5
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Output IP3 and Idd vs.
Supply Voltage @ 1300 MHz [3]
45
250
40
35
200
35
200
30
150
30
150
25
100
25
100
IP3
40
Idd1
Idd2
15
2.7
3.1
3.5
3.9
4.3
4.7
5.1
50
20
0
15
5.5
2.7
VOLTAGE SUPPLY (V)
[1] Vdd = 5V, Rbias = 3.92K
[2] Vdd = 3V, Rbias = 3.92K
300
IP3
250
Idd1
Idd2
50
0
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
[3] Rbias = 3.92K
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Idd (mA)
20
Idd (mA)
300
45
IP3 (dBm)
20
16
0.6
16
7-3
Vdd=5V
24
IP3 (dBm)
NOISE FIGURE (dB)
1.4
P1dB (dBm)
Amplifiers - Low Noise - SMT
1.6
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
30
Pout
Gain
PAE
20
15
5
0
-25
-20
-15
INPUT POWER (dBm)
-10
-5
-30
Pout
Gain
PAE
-25
-20
-15
-10
INPUT POWER (dBm)
-5
-24
-21
-18
-15
INPUT POWER (dBm)
-12
-9
0.9
20
0.8
P1dB
Gain
0.7
0.6
10
4.3
4.7
5
0
35
25
3.9
10
1.1
1
3.5
-25
-20
-15
INPUT POWER (dBm)
-10
-5
5.1
5.5
[2] Vdd = 3V, Rbias = 3.92K
1.2
P1dB
Gain
NF
1.1
30
1
25
0.9
20
0.8
15
0.7
0.6
10
2.7
VOLTAGE SUPPLY (V)
[1] Vdd = 5V, Rbias = 3.92K
Pout
Gain
PAE
15
40
30
3.1
20
NOISE FIGURE (dB)
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NF
15
25
1.2
NOISE FIGURE (dB)
GAIN (dB) & P1dB (dBm)
-27
Gain, Power & Noise Figure
vs. Supply Voltage @ 1300 MHz [3]
40
2.7
0
-5
-30
0
Gain, Power & Noise Figure
vs. Supply Voltage @ 700 MHz [3]
35
Pout (dBm), Gain (dB), PAE (%)
20
0
5
30
25
5
10
Power Compression @ 1300 MHz [2]
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Pout (dBm), Gain (dB), PAE (%)
30
10
Pout
Gain
PAE
15
-5
-30
-5
Power Compression @ 1300 MHz [1]
15
20
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-5
-30
25
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Amplifiers - Low Noise - SMT
30
Pout (dBm), Gain (dB), PAE (%)
35
GAIN (dB) & P1dB (dBm)
Pout (dBm), Gain (dB), PAE (%)
35
25
7
Power Compression @ 700 MHz [2]
Power Compression @ 700 MHz [1]
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
[3] Rbias = 3.92K
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
HMC718LP4 / 718LP4E
v01.1008
7
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
Gain, Noise Figure & Rbias @ 900 MHz
Output IP3 vs. Rbias @ 900 MHz
42
33
1.5
31
1.3
29
1.1
38
36
Vdd=3V
Vdd=5V
27
0.9
Vdd=3V
Vdd=5V
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GAIN (dB)
IP3 (dBm)
40
25
34
32
10
100
Rbias (Ohms)
1000
10000
23
100
1000
10000
0.5
100000
Rbias (Ohms)
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1
0.7
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
NOISE FIGURE (dB)
Amplifiers - Low Noise - SMT
44
HMC718LP4 / 718LP4E
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
7
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Rbias Ω
3V
Min
Max
1K [1]
Open Circuit
5V
0
Open Circuit
Idd1 (mA)
Idd2 (mA)
2.7k
27
155
3.9k
32
155
10k
41
155
Recommended
820
67
166
3.92k
88
166
10k
92
166
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Vdd (V)
[1] Operation with Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended.
Drain Bias Voltage (Vdd)
5.5 V
-5 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 20 mW/°C above 85 °C)
1.8 W
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RF Input Power (RFIN)
(Vdd = +5 Vdc)
Typical Supply
Current vs. Vdd (Rbias = 3.92k)
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Absolute Maximum Ratings
Thermal Resistance
(channel to ground paddle)
50 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Vdd (V)
Idd1 (mA)
Idd2 (mA)
2.7
22
153
3.0
32
155
3.3
43
157
4.5
77
164
5.0
88
166
5.5
95
169
Amplifiers - Low Noise - SMT
v01.1008
Note: Amplifier will operate over full voltage ranges shown above.
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-6
HMC718LP4 / 718LP4E
v01.1008
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Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
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Amplifiers - Low Noise - SMT
7
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
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7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC718LP4
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
HMC718LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
Package Marking [3]
H718
XXXX
H718
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
7-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
Description
N/C
No connection necessary. These pins may be connected to
RF/DC ground without affecting performance.
Interface Schematic
2
RFIN
This pin is DC coupled
and matched to 50 Ohms.
6
RES
This pin is used to set the DC current of the amplifier by
selection of external bias resistor. See application circuit.
17
RFOUT
RF Output and DC BIAS for the second amplifier.
See Application Circuit for off-chip components.
19
RFIN2
This pin is DC coupled. An off-chip DC
blocking capacitor is required.
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Pin Number
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Function
1, 3 - 5, 7 - 16,
18, 20, 22, 23
RFOUT1
This pin is matched to 50 Ohms.
24
Vdd
Power Supply Voltage for the first amplifier. Choke inductor
and bypass capacitors are required. See application circuit.
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21
Amplifiers - Low Noise - SMT
7
Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-8
HMC718LP4 / 718LP4E
v01.1008
B
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LE
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Application Circuit
O
Amplifiers - Low Noise - SMT
7
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
7-9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
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List of Materials for Evaluation PCB 121128
Item
J1 - J3
PCB Mount SMA Connector
2mm Vertical Molex Connector
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J4 - J5
Description
C1, C8, C12
220 pF Capacitor, 0402 Pkg.
C3
10 nF Capacitor, 0402 Pkg.
C4, C11
10 nF Capacitor, 0603 Pkg.
C5, C13
1000 pF Capacitor, 0603 Pkg.
C10
4.7 uF Capacitor, 0805 Pkg.
L1
15 nH Inductor, 0402 Pkg.
L2
18 nH Inductor, 0603 Pkg.
L4
47 nH Inductor, 0603 Pkg.
R1
Rbias Resistor, 0402 Pkg.
R2, R3
0 Ohm Resistor, 0402 Pkg.
U1
HMC718LP4(E) Amplifier
PCB [2]
121126 Evaluation PCB
Amplifiers - Low Noise - SMT
7
Evaluation PCB
[1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 10