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HMC717LP3E
v06.1113
Features
The HMC717LP3E is ideal for:
Noise Figure: 1.1 dB
• Fixed Wireless and LTE/WiMAX/4G
Gain: 16.5 dB
• BTS & Infrastructure
Output IP3: +31.5 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
TE
Typical Applications
• Public Safety Radio
16 Lead 3x3mm QFN Package: 9 mm2
• Access Points
Functional Diagram
General Description
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The HMC717LP3E is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
16.5 dB gain and +31.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717LP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
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AMPLIFIER - LOW NOISE - SMT
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Electrical Specifi cations
O
TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2]
Parameter
Vdd = +3V
Min.
Frequency Range
Gain
Typ.
12
14.3
0.01
Noise Figure
1.25
Input Return Loss
Output Third Order Intercept (IP3)
Total Supply Current (Idd)
21
13.5
1.5
16.5
1.1
15
15
25.5
27
40
[3]
Units
GHz
21
dB
dB/ °C
1.4
13
14
31
Max.
0.01
13
12
Typ.
4.8 - 6.0
13
Output Return Loss
Saturated Output Power (Psat)
Min.
4.8 - 6.0
Gain Variation Over Temperature
Output Power for 1 dB Compression (P1dB)
Vdd = +5V
Max.
dB
dB
18
dB
18.5
dBm
19.5
dBm
31.5
73
dBm
100
mA
[1] Rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
[3] Guaranteed by Design at 5GHz.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Broadband Gain & Return Loss [1][2]
Gain vs. Temperature [1]
25
25
S21
21
10
S11
0
-5
-10
-15
S22
-25
-30
1
2
3
4
5
6
7
FREQUENCY (GHz)
8
SO
5
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
5.3
5.7
FREQUENCY (GHz)
+25C
6.1
+85C
6.5
-40C
+85C
-5
-10
-15
-20
4.5
6.5
4.9
-40C
B
+25C
Output Return Loss vs. Temperature [1]
5.3
5.7
FREQUENCY (GHz)
+25C
6.1
+85C
6.5
-40C
Reverse Isolation vs. Temperature [1]
-20
O
0
-25
ISOLATION (dB)
-5
-10
-15
-20
-25
4.5
4.9
0
21
9
5
4.5
Input Return Loss vs. Temperature [1]
25
13
10
Vdd=3V
Gain vs. Temperature [2]
17
9
LE
Vdd=5V
GAIN (dB)
13
9
-20
RETURN LOSS (dB)
17
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GAIN (dB)
5
RETURN LOSS (dB)
RESPONSE (dB)
15
AMPLIFIER - LOW NOISE - SMT
20
-30
-35
-40
-45
4.9
5.3
5.7
FREQUENCY (GHz)
+25C
[1] Vdd = 5V, Rbias = 2kΩ
+85C
6.1
6.5
-40C
-50
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
+25C
+85C
6.1
6.5
-40C
[2] Vdd = 3V, Rbias = 20kΩ
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
2
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Noise Figure vs. Temperature [1] [2] [4]
P1dB vs. Temperature [1] [2]
2.1
24
20
1.5
P1dB (dBm)
1.2
0.9
0.6
+25C
18
16
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NOISE FIGURE (dB)
Vdd=5V
22
1.8
14
12
-40C
0.3
10
Vdd=3V
0
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
12
10
8
4.5
+25C
+85C
6.5
-40C
34
IP3 (dBm)
31
28
25
22
Vdd=3V
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
+85C
19
Vdd=3V
16
4.5
6.5
4.9
Output IP3 and Total Supply Current vs.
Supply Voltage @ 4800 MHz [3]
5.3
5.7
FREQUENCY (GHz)
+25C
-40C
B
+25C
6.1
+85C
6.5
-40C
Output IP3 and Total Supply Current vs.
Supply Voltage @ 5900 MHz [3]
125
30
95
32
110
80
30
95
28
28
80
26
65
26
65
24
50
24
50
22
35
22
35
20
20
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3 (dBm)
34
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110
20
20
2.7
3.1
3.5
Voltage Supply (V)
IP3-3V
IP3-5V
Idd (mA)
32
Idd (mA)
IP3 (dBm)
6.1
Vdd=5V
37
SO
14
5.3
5.7
FREQUENCY (GHz)
40
Vdd=5V
20
16
4.9
Output IP3 vs. Temperature [1] [2]
24
18
6.5
Vdd=3V
Psat vs. Temperature [1] [2]
22
8
4.5
LE
Vdd=5V
Psat (dBm)
AMPLIFIER - LOW NOISE - SMT
+85C
3.9
4.3
4.7
5.1
5.5
Voltage Supply (V)
Idd-3V
Idd-5V
IP3-3V
IP3-5V
Idd-3V
Idd-5V
[1] Vdd = 5V, Rbias = 2k Ω
[2] Vdd = 3V, Rbias = 20kΩ
[3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V
[4] Measurement reference plane shown on evaluation PCB drawing.
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Power Compression @ 4800 MHz [1]
Power Compression @ 4800 MHz [2]
25
Pout (dBm), GAIN (dB), PAE (%)
20
15
5
0
-5
-10
-20
-15
-10
-5
INPUT POWER (dBm)
PAE
-17
-14
-11
-8
-5
INPUT POWER (dBm)
-2
1
Gain
4
PAE
Power Compression @ 5900 MHz [2]
20
SO
15
Pout (dBm), GAIN (dB), PAE (%)
25
10
5
0
-5
-10
-20
-16
-12
-8
-4
0
INPUT POWER (dBm)
Gain
18
1.4
16
1.3
14
1.2
12
1.1
10
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1.5
8
[1] Vdd = 5V, Rbias = 2k Ω
-10
-20
-15
4.7
5.1
-10
-5
INPUT POWER (dBm)
Pout
0
Gain
5
PAE
1.6
20
1.5
18
1.4
16
1.3
14
1.2
1
12
1.1
0.9
10
5.5
Voltage Supply (V)
P1dB
Gain
0
-5
2.7
NOISE FIGURE (dB)
20
4.3
5
22
NOISE FIGURE (dB)
1.6
3.9
10
Gain, Power & Noise Figure
vs. Supply Voltage @ 5900 MHz [3]
22
3.5
15
8
Gain, Power & Noise Figure
vs. Supply Voltage @ 4800 MHz [3]
3.1
20
PAE
B
Pout
4
Gain (dB) & P1dB (dBm)
Pout (dBm), GAIN (dB), PAE (%)
25
Gain (dB) & P1dB (dBm)
0
-5
Pout
Power Compression @ 5900 MHz [1]
2.7
5
-10
-20
5
Gain
10
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Pout
0
15
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10
20
AMPLIFIER - LOW NOISE - SMT
Pout (dBm), GAIN (dB), PAE (%)
25
1
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Voltage Supply (V)
NF
[2] Vdd = 3V, Rbias = 20kΩ
P1dB
Gain
NF
[3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
4
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
2.2
30
17
2
28
14
1.8
11
1.6
8
1.4
5
1.2
26
24
22
20
100
10000
Rbias (Ohms)
100000
10000
Vdd=3V
Vdd=5V
Gain, Noise Figure & Rbias @ 5900 MHz
SO
1000
10000
Rbias (Ohms)
100000
Vdd=5V
18
1.7
16
1.6
14
1.5
12
1.4
10
1.3
8
1.2
1.1
6
100
1000
10000
100000
Rbias (Ohms)
Vdd=3V
Vdd=5V
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Vdd=3V
100000
NOISE FIGURE (dB)
IP3 (dBm)
32
20
100
1000
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Vdd=5V
35
23
100
Rbias (Ohms)
Output IP3 vs. Rbias @ 5900 MHz
26
1
2
1000
Vdd=3V
29
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GAIN (dB)
20
GAIN (dB)
IP3 (dBm)
Gain, Noise Figure & Rbias @ 4800 MHz
32
NOISE FIGURE (dB)
AMPLIFIER - LOW NOISE - SMT
Output IP3 vs. Rbias @ 4800 MHz
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Rbias (Ohms)
Min
Max
2k [1]
3V
Open Circuit
150 [2]
5V
Recommended
Open Circuit
Idd (mA)
2k
20
4.7k
26
20k
31
261
50
1k
65
2k
73
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Vdd (V)
[1] With Vdd= 3V and Rbias < 2k Ω may result in the part becoming conditionally stable which is not recommended.
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[2] With Vdd = 5V and Rbias<150Ω may result in the part becoming conditionally stable which is not recommended.
Absolute Maximum Ratings
+5.5V
RF Input Power (RFIN)
(Vdd = +5 Vdc)
+20 dBm
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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Drain Bias Voltage (Vdd)
150 °C
Continuous Pdiss (T= 85 °C)
(derate 7.73 mW/°C above 85 °C)
0.5 W
Thermal Resistance
(channel to ground paddle)
129.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
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Channel Temperature
AMPLIFIER - LOW NOISE - SMT
Absolute Bias Resistor
Range & Recommended Bias Resistor Values
Typical Supply Current vs. Supply Voltage
(Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V)
Vdd (V)
Idd (mA)
2.7
23
3.0
31
3.3
39
4.5
60
5.0
73
5.5
85
Note: Amplifi er will operate over full voltage ranges shown above.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
6
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
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NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
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AMPLIFIER - LOW NOISE - SMT
Outline Drawing
Package Information
Part Number
Package Body Material
Lead Finish
HMC717LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[2]
Package Marking [3]
717
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Pin Descriptions
N/C
2
RFIN
This pin is DC coupled
See the application circuit for off-chip component.
8
BIAS
This pin is used to set the DC current of the amplifier by
selection of the external bias resistor. See application circuit.
11
RFOUT
This pin is AC coupled and matched to 50 Ohms
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Vdd2, Vdd1
Power supply voltage. Bypass capacitors are required.
See application circuit.
GND
Package bottom must be connected to RF/DC ground
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13, 15
Interface Schematic
AMPLIFIER - LOW NOISE - SMT
Description
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
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Pin Number
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Function
1, 3 - 7, 9, 10,
12, 14, 16
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
8
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
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LE
SO
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AMPLIFIER - LOW NOISE - SMT
Application Circuit
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
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List of Materials for Evaluation PCB 122416
Item
Description
J1, J2
PCB Mount SMA Connector
J3 - J5
DC Pins
C1
10 nF Capacitor, 0402 Pkg.
C2, C4
1000 pF Capacitor, 0603 Pkg.
C3, C5
100 pF Capacitor, 0603 Pkg.
C6
1.2 pF Capacitor, 0402 Pkg.
R1
2k Ohm Resistor, 0402 Pkg. (Rbias)
R2, R3
0 Ohm Resistor, 0402 Pkg.
U1
HMC717LP3E Amplifier
PCB [2]
120586 Evaluation PCB
AMPLIFIER - LOW NOISE - SMT
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Evaluation PCB
[1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
10