TE
Analog Devices Welcomes
Hittite Microwave Corporation
O
B
SO
LE
NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
TE
O
B
SO
LE
THIS PAGE INTENTIONALLY LEFT BLANK
HMC619
v01.0308
Features
The HMC619 is ideal for:
P1dB Output Power: +28 dBm
• Telecom Infrastructure
Gain: 12 dB
• Microwave Radio & VSAT
Output IP3: +37 dBm
• Military & Space
Supply Voltage: +12V @ 300 mA
• Test Instrumentation
50 Ohm Matched Input/Output
• Fiber Optics
Die Size: 3.38 x 2.05 x 0.1 mm
Functional Diagram
General Description
TE
Typical Applications
LE
The HMC619 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
10 GHz. The amplifier provides 12 dB of gain,
+37 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +12V supply. Gain flatness is excellent at ±0.4
dB from DC to 7 GHz making the HMC619 ideal for
EW, ECM, Radar and test equipment applications.
B
SO
The HMC619 amplifier I/Os are internally matched
to 50 ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifi cations, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA*
O
LINEAR & POWER AMPLIFIERS - CHIP
3
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
DC - 3
9.8
Max.
Min.
11.5
dB
dB
Gain Variation Over Temperature
0.014
0.016
0.023
dB/ °C
Input Return Loss
12.5
12.5
13.5
dB
21
25
17
dB
26.5
dBm
28.5
28
27.5
dBm
Output Third Order Intercept (IP3)
42
40
37
dBm
Noise Figure
4
5
7
dB
300
300
300
mA
Saturated Output Power (Psat)
Supply Current
(Idd) (Vdd= 12V Typ.)
25
27.5
24
* Adjust Vgg1 between -2V to 0V to achieve Idd= 300 mA typical.
3 - 94
GHz
±0.4
28
8.5
Units
±0.3
25.5
12
Max.
±0.3
Output Power for 1 dB Compression (P1dB)
9.0
Typ.
7 - 10
Gain Flatness
Output Return Loss
12.8
Typ.
3-7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Gain vs. Temperature
20
18
15
16
14
5
0
GAIN (dB)
S21
S11
S22
-5
-10
10
8
TE
+25C
+85C
-55C
4
-20
2
-25
-30
0
0
2
4
6
8
10
0
12
FREQUENCY (GHz)
2
4
8
10
12
LE
Output Return Loss vs. Temperature
0
0
-5
+25C
+85C
-55C
-5
-15
B
SO
-10
+25C
+85C
-55C
-20
-25
-30
0
2
4
6
8
10
-10
-15
-20
-25
0
12
2
4
O
8
10
12
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
0
15
-10
+25C
+85C
-55C
12
NOISE FIGURE (dB)
-20
6
FREQUENCY (GHz)
FREQUENCY (GHz)
ISOLATION (dB)
6
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
3
12
6
-15
RETURN LOSS (dB)
RESPONSE (dB)
10
+25C
+85C
-55C
-30
-40
LINEAR & POWER AMPLIFIERS - CHIP
Gain & Return Loss
9
6
3
-50
-60
0
2
4
6
8
FREQUENCY (GHz)
10
12
0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 95
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Psat vs. Temperature
32
30
30
28
28
Psat (dBm)
32
26
+25C
+85C
-55C
26
+25C
+85C
-55C
24
TE
24
22
22
20
20
0
1
2
3
4
5
6
7
8
9
10
0
FREQUENCY (GHz)
1
2
3
4
5
6
7
8
10
LE
Output IP3 vs. Output Power @ 5 GHz
45
50
40
30
IP3 (dBm)
35
B
SO
45
+25C
+85C
-55C
25
20
0
2
4
6
8
10
12
11.5V
12V
12.5V
40
35
30
0
3
6
FREQUENCY (GHz)
9
12
15
18
21
OUTPUT POWER (dBm)
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
O
Gain, Power & Output IP3 vs.
Supply Voltage @ 5 GHz, Fixed Vgg
45
40
35
30
25
Gain
P1dB
Psat
OIP3
20
15
10
11.5
12
12.5
Vdd (V)
3 - 96
9
FREQUENCY (GHz)
Output IP3 vs. Temperature
IP3 (dBm)
LINEAR & POWER AMPLIFIERS - CHIP
3
P1dB (dBm)
P1dB vs. Temperature
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
24
27
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Power Compression @ 5 GHz
Power Compression @ 2 GHz
Pout
Gain
PAE
24
20
16
8
4
0
-10
-5
0
5
10
15
4
-5
0
LE
Pout
Gain
PAE
20
B
SO
Pout (dBm), GAIN (dB), PAE (%)
24
0
-10
8
5
10
15
20
15
20
10
28
4
12
Power Dissipation
32
8
16
INPUT POWER (dBm)
Power Compression @ 10 GHz
12
3
20
0
-10
20
INPUT POWER (dBm)
16
Pout
Gain
PAE
24
TE
12
28
-5
0
5
10
15
20
9
8
7
6
5
4
3
-10
-5
INPUT POWER (dBm)
O
Absolute Maximum Ratings
Max Pdis @ 85C
2 GHz
6 GHz
0
5
10
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+13 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg1)
-2.5 to 0 Vdc
+11.5
299
Gate Bias Voltage (Vgg2)
+4V to +6V
+12.0
300
RF Input Power (RFIN)(Vdd = +10 Vdc)
+27 dBm
+12.5
301
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 98 mW/°C above 85 °C)
6.37 W
Thermal Resistance
(channel to die bottom)
10.2 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
LINEAR & POWER AMPLIFIERS - CHIP
28
Pout (dBm), GAIN (dB), PAE (%)
32
POWER DISSIPATION (W)
Pout (dBm), GAIN (dB), PAE (%)
32
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 97
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Outline Drawing
3 - 98
TE
LE
B
SO
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
O
LINEAR & POWER AMPLIFIERS - CHIP
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Pad Descriptions
Description
1
IN
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2
Vgg2
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +5V should be applied to Vgg2.
3
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
4
ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5
OUT & Vdd
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6, 7
ACG3, ACG4
Low frequency termination. Attach bypass
capacitor per application circuit herein.
LE
B
SO
8
Interface Schematic
GND
Die bottom must be connected to RF/DC ground.
O
Die Bottom
Vgg1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3
LINEAR & POWER AMPLIFIERS - CHIP
Function
TE
Pad Number
3 - 99
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Assembly Diagram
TE
LE
B
SO
Application Circuit
O
LINEAR & POWER AMPLIFIERS - CHIP
3
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 500mA
3 - 100
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
Wire Bond
0.076mm
(0.003”)
TE
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
B
SO
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
Figure 1.
LE
Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
O
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
3
LINEAR & POWER AMPLIFIERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 101