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HMC5805LS6
v01.0613
AMPLIFIERS - LINEAR & POWER - SMT
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Typical Applications
Features
The HMC5805LS6 is ideal for:
High P1dB Output Power: 22 dBm
• Test Instrumentation
High Psat Output Power: 24 dBm
• Microwave Radio & VSAT
High Gain: 13.5 dB
• Military & Space
High Output IP3: 33 dBm
• Telecom Infrastructure
Supply Voltage: +10 V @ 175 mA
• Fiber Optics
16 Lead Ceramic 6x6 mm SMT Package: 36 mm2
Functional Diagram
General Description
The HMC5805LS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 13 dB of gain,
33 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC5805LS6 exhibits a slightly
positive gain slope from 8 to 32 GHz, making it ideal
for EW, ECM, Radar and test equipment applications. The HMC5805LS6 amplifier I/Os are internally
matched to 50 Ohms and the 6x6 mm SMT package is
well suited for automated assembly techniques.
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
DC - 12
11
Gain Flatness
13
Typ.
Max.
Min.
12 - 35
11.5
13.5
7
Typ.
Max.
Units
35 - 40
GHz
10
dB
±0.35
±0.5
±1.0
dB
0.02
0.03
0.05
dB/ °C
Input Return Loss
18
15
12
dB
Output Return Loss
24
13
11
dB
19
dBm
Gain Variation Over Temperature
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
20
22
19
21
16
24
23.5
21
dBm
Output Third Order Intercept (IP3)
33
31
27
dBm
Noise Figure
4.5
4
7
dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
175
175
175
mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5805LS6
v01.0613
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Gain & Return Loss
Gain vs. Temperature
20
0
14
GAIN (dB)
RESPONSE (dB)
16
-10
-20
12
10
-30
8
-40
0
5
10
15
20
25
30
35
40
45
6
50
0
FREQUENCY (GHz)
S21
10
15
S11
S22
+25C
25
30
35
40
-10
-10
RETURN LOSS (dB)
0
-20
-30
+85C
-40C
Output Return Loss vs. Temperature
0
-20
-30
-40
-40
0
5
10
15
20
25
30
35
0
40
4
8
12
+25C
16
20
24
28
32
36
40
FREQUENCY (GHz)
FREQUENCY (GHz)
+85C
+25C
-40C
+85C
-40C
P1dB vs. Temperature
Noise Figure vs. Temperature
10
27
25
P1dB (dBm)
8
NOISE FIGURE(dB)
20
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
5
AMPLIFIERS - LINEAR & POWER - SMT
18
10
6
4
23
21
19
2
17
0
15
0
4
8
12
16
20
24
28
32
36
FREQUENCY (GHz)
+25C
+85C
40
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
-40C
+25C
+85C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC5805LS6
v01.0613
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Psat vs. Temperature
27
25
25
23
23
Psat (dBm)
P1dB (dBm)
27
21
21
19
19
17
17
15
15
0
5
10
15
20
25
30
35
40
0
5
10
15
FREQUENCY (GHz)
+8V
20
25
30
35
40
FREQUENCY (GHz)
+10V
+11V
+25C
Psat vs. Supply Voltage
+85C
-40C
P1dB vs. Supply Current
27
26
25
24
22
23
P1dB (dBm)
Psat (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
P1dB vs. Supply Voltage
21
19
20
18
16
17
14
12
15
0
5
10
15
20
25
30
35
0
40
4
8
12
+8V
16
20
24
28
32
36
40
FREQUENCY (GHz)
FREQUENCY (GHz)
+10V
+11V
125 mA
175 mA
Output IP3 vs.
Temperature @ Pout=12 dBm / Tone
Psat vs. Supply Current
27
38
36
25
IP3 (dBm)
Psat (dBm)
34
23
21
19
32
30
28
26
17
24
15
22
0
4
8
12
16
20
24
28
32
36
40
0
5
10
125 mA
3
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
175 mA
+25C
+85C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5805LS6
v01.0613
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
80
36
70
34
60
32
50
30
28
40
30
26
20
24
10
22
0
0
5
10
15
20
25
30
35
40
0
2
4
6
FREQUENCY (GHz)
+8V
+10V
12
14
16
26 GHz
34 GHz
40 GHz
Output IM3 @ Vdd=+11V
80
80
70
70
60
60
50
50
IM3 (dBc)
IM3 (dBc)
10
2 GHz
8 GHz
14 GHz
20 GHz
+11V
Output IM3 @ Vdd=+10V
40
30
40
30
20
20
10
10
0
0
0
2
4
6
8
10
12
14
0
16
2
4
6
8
10
12
14
16
Pout/TONE (dBm)
Pout/TONE (dBm)
2 GHz
8 GHz
14 GHz
20 GHz
2 GHz
8 GHz
14 GHz
20 GHz
26 GHz
34 GHz
40 GHz
Reverse Isolation vs. Temperature
26 GHz
34 GHz
40 GHz
Power Compression @ 20GHz
32
28
Pout (dBm), GAIN (dB), PAE (%)
0
-10
-20
ISOLATION (dB)
8
Pout/TONE (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
Output IM3 @ Vdd=+8V
38
IM3 (dBc)
IP3 (dBm)
Output IP3 vs. Supply Voltage
@ Pout=12 dBm / Tone
-30
-40
-50
-60
-70
-80
24
20
16
12
8
4
0
0
4
8
12
16
20
24
28
32
36
40
FREQUENCY (GHz)
+25C
+85C
44
0
3
6
9
12
15
INPUT POWER (dBm)
-40C
Pout
Gain
PAE
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC5805LS6
v01.0613
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Gain and Power vs. Supply Voltage
Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
30
25
20
15
10
25
20
15
10
5
8
9
10
11
125
135
145
GAIN
P1dB
Gain
Psat
165
175
P1dB
Psat
Second Harmonics vs. Temperature @
Pout=14 dBm
Power Dissipation
60
SECOND HARMONIC (dBc)
3
2
1
0
50
40
30
20
10
0
0
3
6
9
12
0
15
4
8
INPUT POWER (dBm)
4 GHz
10 GHz
20 GHz
12
16
20
24
FREQUENCY(GHz)
30 GHz
40 GHz
+25C
+85C
-40C
Second Harmonics vs. Pout
60
60
50
50
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
155
Idd (mA)
Vdd (V)
Second Harmonics vs. Vdd
@ Pout=14 dBm
40
30
20
10
0
40
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
+8V
5
Gain and Power vs. Supply Current
5
POWER DISSIPATION (W)
AMPLIFIERS - LINEAR & POWER - SMT
30
+10V
0
4
8
12
16
20
24
FREQUENCY(GHz)
+11V
+4 dBm
+6 dBm
+8 dBm
+10 dBm
+12 dBm
+14 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5805LS6
v01.0613
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Drain Bias Voltage (Vdd)
12V
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
-3 to 0 Vdc
+9
175
For Vdd = 12V, Vgg2 = 5.5V
Idd >145mA
+10
175
+11
175
For Vdd between 8.5V to 11V,
Vgg2 = (Vdd - 6.5V) up to 4.5V
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd = 175 mA.
For Vdd < 8.5V,
Vgg2 must remain > 2V
RF Input Power (RFIN)
17 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C)
2.1 W
Thermal Resistance
(channel to ground paddle)
31.1 °C/W
Output Power into VSWR >7:1
24 dBm
Storage Temperature
-65 to 150 °C
Operating Temperature
-40 to 85 °C
ESD Sensitivity (HBM)
Class 0 Passed 150V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
Table 1. Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking [1]
HMC5805LS6
ALUMINA, WHITE
Gold over Nickel
N/A
H5805
XXXX
[1] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC5805LS6
v01.0613
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Pin Descriptions
AMPLIFIERS - LINEAR & POWER - SMT
Pin Number
7
Function
Description
ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
RFOUT & VDD
RF output for amplifier. Connect DC bias (VDD) network
to provide drain current (Idd). See application circuit
herein.
3
VGG2
Gate control 2 for amplifier. Attach bypass
capacitors per application circuit herein. For normal
operation +3.5V should be applied to Vgg2.
6
RFIN
This pin is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
9
VGG1
Gate control 1 for amplifier. Attach bypass
capacitors per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
10
ACG4
Low frequency termination. Attach bypass
capacitor per application circuit herein.
11
ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5, 7, 13, 15
GND
These pins and exposed ground paddle must be
connected to RF/DC ground.
4, 8, 12, 16
N/C
These pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
1, 2, 14
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5805LS6
v01.0613
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 250 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC5805LS6
v01.0613
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Evaluation PCB
List of Materials for Evaluation EVAL01 HMC5805L56
Item
Description
J1, J2
PCB Mount K Connectors, SRI
J5, J6
DC Pins
C3, C4
100 pF Capacitors, 0402 Pkg.
C8 - C11
0.01 μF Capacitors, 0603 Pkg.
C13, C15, C16 , C18
4.7 μF Capacitors, Case A Pkg.
R2
Zero Ohm Resistor, 0402 Pkg.
U1
HMC5805LS6 Amplifier
PCB [2]
128996 Evaluation PCB
[1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5805LS6
v00.0411
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Notes
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10