1 Watt, GaAs pHEMT MMIC
Power Amplifier, 27 GHz to 32 GHz
HMC1132
Preliminary Technical Data
APPLICATIONS
1
2
3
4
5
6
7
8
HMC1132
GND
NC
NC
VDD1
NC
NC
VDD2
GND
9
10
11
12
13
14
15
16
Point-to-point radios
Point-to-multipoint radios
VSAT and SATCOM
Military and space
GND
NC
NC
GND
RFIN
GND
NC
GND
24
23
22
21
20
19
18
17
GND
NC
NC
GND
RFOUT
GND
NC
GND
PACKAGE
BASE
13528-001
Saturated output power (PSAT): 30.5 dBm at 22% power
added efficiency (PAE)
High output IP3: 35 dBm
High gain: 22 dB
DC supply: 6 V at 600 mA
No external matching required
32-lead, 5 mm × 5 mm LFCSP package
GND
VGG
NC
NC
NC
NC
NC
GND
FUNCTIONAL BLOCK DIAGRAM
32
31
30
29
28
27
26
25
FEATURES
Figure 1.
GENERAL DESCRIPTION
The HMC1132 is a four-stage, GaAs pHEMT MMIC, 1 watt
power amplifier that operates between 27 GHz and 32 GHz.
The HMC1132 provides 22 dB of gain and 30.5 dBm of
saturated output power at 22% PAE from a 6 V power supply.
The HMC1132 exhibits excellent linearity and it is optimized
for high capacity, point-to-point and point-to-multipoint radio
Rev. PrB
systems. The amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification before the
antenna.
The HMC1132 amplifier input/outputs (I/Os) are internally
matched to 50 Ω. The device is supplied in a compact, leadless
QFN, 5 mm × 5 mm surface-mount package.
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©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
HMC1132
Preliminary Technical Data
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................5
Applications ....................................................................................... 1
Interface Schematics .....................................................................5
Functional Block Diagram .............................................................. 1
Typical Performance Characteristics ..............................................6
General Description ......................................................................... 1
Applications Information .............................................................. 10
Specifications..................................................................................... 3
Application Circuit ..................................................................... 10
Electrical Specifications ............................................................... 3
Evaluation Printed Circuit Board (PCB) ..................................... 11
Total Supply Current by VDD ....................................................... 3
Bill of Materials ........................................................................... 11
Absolute Maximum Ratings ............................................................ 4
Outline Dimensions ....................................................................... 12
ESD Caution .................................................................................. 4
Rev. PrB | Page 2 of 12
Preliminary Technical Data
HMC1132
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
TA = 25°C, VDD = VDD1 = VDD2 = 6 V, IDD = 600 mA.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation over
Temperature
RETURN LOSS
Input
Output
POWER
Output Power for 1 dB
Compression
Saturated Output Power
OUTPUT THIRD-ORDER
INTERCEPT
TOTAL SUPPLY CURRENT
Symbol
22
0.036
Unit
GHz
dB
dB/°C
6
14
dB
dB
30
dBm
PSAT
IP3
30.5
35
dBm
dBm
IDD
600
mA
P1dB
Min
27
20
28
Typ
Max
32
Test Conditions/Comments
Measurement taken at 6 V at 600 mA, POUT ÷ tone = 20 dBm
Adjust the amplifier gate control voltage (VGG) between −2 V and
0 V to achieve an IDD = 600 mA, typical
TOTAL SUPPLY CURRENT BY VDD
Table 2.
Parameter
SUPPLY CURRENT
VDD = 5 V
VDD = 5.5 V
VDD = 6 V
Symbol
IDD
Min
Typ
600
600
600
Max
Unit
mA
mA
mA
Rev. PrB | Page 3 of 12
Test Conditions/Comments
Adjust the amplifier gate control voltage (VGG) between
−2 V and 0 V to achieve an IDD = 600 mA, typical
HMC1132
Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Table 3.
Parameter
Drain Voltage Bias
RF Input Power (RFIN)1
Channel Temperature
Continuous PDISS (T = 85°C) (Derate 61 mw/°C
Above 85°C)
Thermal Resistance (RTH) Junction to Ground
Paddle
Maximum Peak Reflow Temperature
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity (Human Body Model)
1
Rating
7V
18 dBm
150°C
4.04 W
16.4°C/W
260°C
−65°C to +150°C
−40°C to +85°C
Class 1A, passed
250 V
ESD CAUTION
Maximum PIN is limited to 18 dBm or thermal limits constrained by maximum
power dissipation (see Figure 31), whichever is lower.
Rev. PrB | Page 4 of 12
Preliminary Technical Data
HMC1132
32
31
30
29
28
27
26
25
GND
VGG
NC
NC
NC
NC
NC
GND
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
3
4
5
6
7
8
HMC1132
TOP VIEW
(Not to Scale)
24
23
22
21
20
19
18
17
GND
NC
NC
GND
RFOUT
GND
NC
GND
NOTES
1. NC = NO CONNECT.
2. EXPOSED PAD. EXPOSED PAD MUST
BE CONNECTED TO RF/DC GROUND.
13528-002
GND
NC
NC
VDD1
NC
NC
VDD2
GND
9
10
11
12
13
14
15
16
GND
NC
NC
GND
RFIN
GND
NC
GND
Figure 2. Pin Configuration
Table 4. Pad Function Descriptions
Mnemonic
GND
Description
Ground. These pins are exposed ground paddles that must be connected to RF/dc ground.
NC
20
RFOUT
31
VGG
No Connect. These pins are not connected internally. However, all data was measured with these pins
connected to RF/dc ground externally.
RF Input. This pin is dc-coupled and matched to 50 Ω. See Figure 4 for the RFIN interface schematic.
Drain Bias Voltage. External by pass capacitors of 100 pF, 10 nF, and 4.7 μF are required. See Figure 5
for the VDD1 and VDD2 interface schematic.
RF Output. This pin is ac-coupled and matched to 50 Ω. See Figure 6 for the RFOUT interface
schematic.
Gate Control for Amplifier. Adjust VGG to achieve the recommended bias current. External bypass
capacitors of 100 pF, 10 nF, and 4.7 μF are required. See Figure 7 for the VGG interface schematic.
Exposed Paddle. The exposed pad must be connected to RF/dc ground.
RFIN
VDD1, VDD2
EPAD
INTERFACE SCHEMATICS
RFOUT
13528-003
GND
13528-006
Pad No.
1, 4, 6, 8, 9, 16, 17, 19,
21, 24, 25, 32
2, 3, 7, 10, 11, 13, 14,
18, 22, 23, 26 to 30
5
12, 15
Figure 6. RFOUT Interface
Figure 3. GND Interface
VGG
13528-007
13528-004
RFIN
Figure 7. VGG Interface
Figure 4. RFIN Interface
13528-005
VDD1 ,VDD2
Figure 5. VDD1 and VDD2 Interface
Rev. PrB | Page 5 of 12
HMC1132
Preliminary Technical Data
TYPICAL PERFORMANCE CHARACTERISTICS
30
28
26
20
GAIN (dB)
0
S22
S21
S11
–10
22
20
+85°C
+25°C
–40°C
18
–20
16
26
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
14
27
13528-008
–30
25
28
29
30
31
32
33
34
FREQUENCY (GHz)
Figure 8. Broadband Gain and Return Loss vs. Frequency
13528-011
RESPONSE (dB)
24
10
Figure 11. Gain vs. Frequency at Various Temperatures
0
0
–2
+85°C
+25°C
–40°C
–5
RETURN LOSS (dB)
RETURN LOSS (dB)
–4
–6
–8
+85°C
+25°C
–40°C
–10
–10
–15
–12
–20
28
29
30
31
32
33
34
FREQUENCY (GHz)
–25
27
13528-009
–16
27
Figure 9. Input Return Loss vs. Frequency at Various Temperatures
29
30
31
32
33
34
FREQUENCY (GHz)
Figure 12. Output Return Loss vs. Frequency at Various Temperatures
35
35
+85°C
+25°C
–40°C
5V
5.5V
6V
33
P1dB (dBm)
33
31
29
31
29
27
25
26
27
28
29
30
31
32
FREQUENCY (GHz)
33
Figure 10. P1dB vs. Frequency at Various Temperatures
25
26
27
28
29
30
31
32
FREQUENCY (GHz)
Figure 13. P1dB vs. Frequency at Various Supply Voltages
Rev. PrB | Page 6 of 12
33
13528-013
27
13528-010
P1dB (dBm)
28
13528-012
–14
HMC1132
35
35
33
33
PSAT (dBm)
31
+85°C
+25°C
–40°C
29
28
29
30
31
32
33
25
26
13528-014
27
FREQUENCY (GHz)
29
30
31
32
33
35
500mA
600mA
700mA
500mA
600mA
700mA
33
PSAT (dBm)
33
31
29
31
29
27
28
29
30
31
32
33
FREQUENCY (GHz)
25
26
13528-015
27
35
35
IP3 (dBm)
40
30
+85°C
+25°C
–40°C
29
30
31
32
30
31
33
FREQUENCY (GHz)
32
33
30
500mA
600mA
700mA
25
13528-016
28
29
Figure 18. PSAT vs. Frequency at Various Supply Currents (IDD)
40
27
28
FREQUENCY (GHz)
Figure 15. P1dB vs. Frequency at Various Supply Currents (IDD)
25
27
13528-018
27
20
26
28
Figure 17. PSAT vs. Frequency at Various Supply Voltages
35
25
26
27
FREQUENCY (GHz)
Figure 14. PSAT vs. Frequency at Various Temperatures
P1dB (dBm)
29
27
25
26
IP3 (dBm)
31
13528-017
27
5V
5.5V
6V
Figure 16. Output IP3 vs. Frequency at Various Temperatures,
POUT/Tone = 20 dBm
20
26
27
28
29
30
31
32
33
FREQUENCY (GHz)
Figure 19. Output IP3 vs. Frequency at Various Supply Currents,
POUT/Tone = 20 dBm
Rev. PrB | Page 7 of 12
13528-019
PSAT (dBm)
Preliminary Technical Data
HMC1132
Preliminary Technical Data
60
40
50
35
IM3 (dBc)
IP3 (dBm)
40
5V
5.5V
6V
30
27GHz
28GHz
29GHz
30GHz
31GHz
32GHz
30
20
25
27
28
29
30
31
32
33
FREQUENCY (GHz)
0
10
13528-020
20
26
12
50
50
40
40
IM3 (dBc)
27GHz
28GHz
29GHz
30GHz
31GHz
32GHz
22
24
22
24
30
27GHz
28GHz
29GHz
30GHz
31GHz
32GHz
20
10
14
16
18
20
22
24
POUT/TONE (dBm)
0
10
13528-021
12
12
16
18
20
POUT/TONE (dBm)
Figure 21. Output Third-Order Intermodulation Distortion (IM3)
at VDD = 5.5 V
Figure 24. Output IM3 at VDD = 6 V
1000
40
14
13528-024
10
0
10
1000
40
35
875
30
25
750
20
15
10
5
–8
–6
–4
–2
0
2
4
6
8
10
INPUT POWER (dBm)
12
625
25
750
20
15
POUT
GAIN
PAE
IDD
10
5
500
14
13528-022
POUT
GAIN
PAE
IDD
875
30
IDD (mA)
POUT (dBm), GAIN (dB), PAE (%)
35
IDD (mA)
POUT (dBm), GAIN (dB), PAE (%)
20
Figure 22. Power Compression at 27 GHz
0
–10
–8
–6
–4
–2
0
2
4
6
8
10
12
INPUT POWER (dBm)
Figure 25. Power Compression at 29.5 GHz
Rev. PrB | Page 8 of 12
625
500
14
13528-025
IM3 (dBc)
60
0
–10
18
Figure 23. Output IM3 at VDD = 5 V
60
20
16
POUT/TONE (dBm)
Figure 20. Output IP3 vs. Frequency at Various Supply Voltages,
POUT/Tone = 20 dBm
30
14
13528-023
10
Preliminary Technical Data
HMC1132
1000
40
30
25
875
30
20
PAE (%)
750
20
IDD (mA)
25
15
+85°C
+25°C
–40°C
15
10
POUT
GAIN
PAE
IDD
–8
–6
–4
–2
0
2
4
6
8
10
12
500
14
0
26
INPUT POWER (dBm)
Figure 26. Power Compression at 32 GHz
28
29
30
31
32
33
FREQUENCY (GHz)
Figure 29. PAE vs. Frequency at Various Temperatures, PIN = 10 dBm
40
GAIN (dB), P1dB (dBm), PSAT (dBm)
40
35
30
GAIN
P1dB
PSAT
25
20
15
500
550
600
650
700
IDD (mA)
35
30
GAIN
P1dB
PSAT
25
20
15
5.0
13528-027
GAIN (dB), P1dB (dBm), PSAT (dBm)
27
5.2
5.5
5.7
6.0
VDD (V)
Figure 27. Gain and Power vs. Supply Current at 29.5 GHz
Figure 30. Gain and Power vs. Supply Voltage at 29.5 GHz
0
5
13528-030
0
–10
5
13528-029
5
625
13528-026
10
–10
POWER DISSIPATION (W)
+85°C
+25°C
–40°C
–20
ISOLATION (dB)
–30
–40
–50
–60
4
3
2
27GHz
28GHz
29GHz
30GHz
31GHz
32GHz
–80
26
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
1
–10
–5
0
5
10
INPUT POWER (dBm)
Figure 31. Power Dissipation at 85°C
Figure 28. Reverse Isolation vs. Frequency at Various Temperatures
Rev. PrB | Page 9 of 12
15
13528-031
–70
13528-028
POUT (dBm), GAIN (dB), PAE (%)
35
HMC1132
Preliminary Technical Data
APPLICATIONS INFORMATION
APPLICATION CIRCUIT
VGG
C20
10nF
C10
100pF
32
31
30
29
28
27
26
25
C30
4.7µF
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
J2
RFOUT
9
10
11
12
13
14
15
16
J1
RFIN
HMC1132
C23
4.7µF
C13
10nF
C3
100pF
C25
4.7µF
C15
10nF
VDD2
C5
100pF
Figure 32. Typical Application Circuit
Rev. PrB | Page 10 of 12
13528-032
VDD1
Preliminary Technical Data
HMC1132
13528-033
EVALUATION PRINTED CIRCUIT BOARD (PCB)
Figure 33. Evaluation Printed Circuit Board (PCB)
BILL OF MATERIALS
Use RF circuit design techniques for the circuit board used in
the application. Provide 50 Ω impedance to the signal lines and
connect the package ground leads and exposed paddle directly
to the ground plane, similar to that shown in Figure 33. Use a
sufficient number of via holes to connect the top and bottom
ground planes. The evaluation circuit board shown in Figure 33
is available from Analog Devices, Inc., upon request.
Table 5. Bill of Materials for Evaluation PCB
EV1HMC1132LP5D
Item
J1, J2
J3, J4
C3, C5, C10
C13, C15, C20
C23, C25, C30
U1
PCB
Rev. PrB | Page 11 of 12
Description
Conn, SRI K connector.
DC pins.
100 pF capacitors, 0402 package.
10,000 pF capacitors, 0402 package.
4.7 μF capacitors, Case A package.
HMC1132LP5DE amplifier.
131393 evaluation board. Circuit board material:
Rogers 4350 or Arlon 25FR.
HMC1132
Preliminary Technical Data
OUTLINE DIMENSIONS
PIN 1
INDICATOR
0.30
0.25
0.18
24
1
0.50
BSC
3.15
3.00 SQ
2.85
EXPOSED
PAD
8
17
TOP VIEW
6° BSC
SIDE VIEW
0.55
0.50
0.35
1.53
1.34
1.15
COPLANARITY
0.08
16
9
BOTTOM VIEW
3.50 REF
PKG-000000
Figure 34. 32-Lead Lead Frame Chip Scale Package [LFCSP]
5 mm × 5 mm Body and 1.34 mm Package Height
(HCP-32-2)
Dimensions shown in millimeters
Rev. PrB | Page 12 of 12
0.50 MIN
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
SEATING
PLANE
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR13528-0-2/16(PrB)
PIN 1
INDICATOR
32
25
08-06-2015-A
5.10
5.00 SQ
4.90