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HMC667LP2 / 667LP2E
v02.1110
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Typical Applications
Features
The HMC667LP2(E) is ideal for:
Low Noise Figure: 0.75 dB
• WiMAX, WiBro & Fixed Wireless
High Gain: 19 dB
• SDARS & WLAN Receivers
High Output IP3: +29.5 dBm
• Infrastructure & Repeaters
Single Supply: +3V to +5V
• Access Points
6 Lead 2x2mm DFN Package: 4 mm2
• Telematics & DMB
Functional Diagram
General Description
The HMC667LP2(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for WiMAX, WLAN and
fixed wireless receivers operating between 2300
and 2700 MHz. This self-biased LNA has been
optimized to provide 0.75 dB noise figure, 19 dB
gain and +29.5 dBm output IP3 from a single supply
of +5V. Input and output return losses are excellent
and the LNA requires minimal external matching and
bias decoupling components. The HMC667LP2(E)
can also operate from a +3V supply for lower power
applications.
Electrical Specifi cations, TA = +25° C
Vdd = +3 Vdc
Vdd = +5 Vdc
Parameter
Units
Min.
Frequency Range
Gain
Max.
Min.
2300 - 2700
14
17.5
16
Typ.
Max.
2300 - 2700
MHz
19
dB
Gain Variation Over Temperature
0.01
Noise Figure
0.9
Input Return Loss
10
12
dB
Output Return Loss
15
14
dB
16.5
dBm
17
dBm
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
7-1
Typ.
9.5
0.01
1.2
11.5
13.5
12.5
Output Third Order Intercept (IP3)
22
Supply Current (Idd)
24
0.75
dB/ °C
1.1
29.5
32
59
dB
dBm
75
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
20
Vdd=5V
S21
22
10
20
GAIN (dB)
RESPONSE (dB)
15
5
S11
0
-5
18
16
-10
Vdd=3V
-15
Vdd=5V
Vdd=3V
-20
-25
0.5
+25C
+85C
-40C
14
S22
12
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
4
4.5
2
5
Input Return Loss vs. Temperature [1]
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
Output Return Loss vs. Temperature [1]
0
0
RETURN LOSS (dB)
+25C
+85C
-40C
-5
-10
-15
-20
+25C
+85C
-40C
-5
-10
AMPLIFIERS - LOW NOISE - SMT
24
25
RETURN LOSS (dB)
7
Gain vs. Temperature
Broadband Gain & Return Loss
-15
-20
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
2.9
3
P1dB vs. Temperature
Reverse Isolation vs. Temperature [1]
-20
20
-25
18
16
-30
P1dB (dBm)
ISOLATION (dB)
Vdd=5V
-35
+25C
+85C
-40C
-40
14
Vdd=3V
12
10
-45
+25C
+85C
-40C
8
6
-50
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
[1] Vdd = 5V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-2
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
7
Psat vs. Temperature
Noise Figure vs. Temperature [1]
20
Vdd=5V
Vdd=5V
Vdd=3V
1.4
18
+25C
1.2
+85C
16
Psat (dBm)
NOISE FIGURE (dB)
1
0.8
Vdd=3V
14
12
0.6
10
0.4
8
+25C
+85C
-40C
-40C
0.2
6
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
Output IP3 vs. Temperature
36
34
+25C
+85C
-40C
32
Vdd=5V
30
IP3 (dBm)
AMPLIFIERS - LOW NOISE - SMT
1.6
28
26
Vdd=3V
24
22
20
18
16
2.2
2.3
2.4
2.5
2.6
2.7
FREQUENCY (GHz)
2.9
3
Output IP3 and Idd vs.
Supply Voltage @ 2500 MHz
36
76
34
70
34
70
32
64
32
64
30
58
30
58
28
52
28
52
26
46
26
46
24
40
24
40
22
34
22
34
20
28
20
28
18
22
18
22
16
2.7
3.1
3.5
3.9
4.3
4.7
Voltage Supply (V)
5.1
16
5.5
IP3 (dB)
76
16
2.7
16
3.1
3.5
3.9
4.3
4.7
Voltage Supply (V)
5.1
5.5
[1] Measurement reference plane shown on evaluation PCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Idd (mA)
36
Idd (mA)
IP3 (dB)
Output IP3 and Idd vs.
Supply Voltage @ 2300 MHz
2.8
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
20
15
10
5
0
Pout
Gain
PAE
-5
-10
-25
-20
-15
-10
INPUT POWER (dBm)
-5
Output Power, Gain & PAE @ 2500 MHz [1]
10
5
0
Pout (dBm), Gain (dB), PAE (%)
20
15
10
5
0
Pout
Gain
PAE
-5
-10
-25
-20
-15
-10
INPUT POWER (dBm)
-5
-5
-20
-15
-10
INPUT POWER (dBm)
-5
0
20
15
10
5
0
1.2
24
22
1.1
22
NF
18
0.9
16
0.8
14
0.7
0.6
P1dB
Gain
10
3.5
3.9
4.3
4.7
Voltage Supply (V)
-15
-10
INPUT POWER (dBm)
-5
0
5.1
1.1
NF
20
1
18
0.9
16
0.8
14
0.7
10
0.4
8
2.7
0.6
P1dB
Gain
12
0.5
5.5
1.2
NOISE FIGURE (dB)
1
NOISE FIGURE (dB)
20
3.1
-20
P1dB, Gain, & Noise Figure
vs. Supply Voltage @ 2500 MHz
24
12
Pout
Gain
PAE
-5
-10
-25
0
P1dB, Gain, & Noise Figure
vs. Supply Voltage @ 2300 MHz
[1] Vdd = 5V
Pout
Gain
PAE
25
Gain (dB) & P1dB (dBm)
Pout (dBm), Gain (dB), PAE (%)
15
Output Power, Gain & PAE @ 2500 MHz [2]
25
Gain (dB) & P1dB (dBm)
20
-10
-25
0
AMPLIFIERS - LOW NOISE - SMT
25
Pout (dBm), Gain (dB), PAE (%)
Pout (dBm), Gain (dB), PAE (%)
25
8
2.7
7
Output Power, Gain & PAE @ 2300 MHz [2]
Output Power, Gain & PAE @ 2300 MHz [1]
0.5
0.4
3.1
3.5
3.9
4.3
4.7
Voltage Supply (V)
5.1
5.5
[2] Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
7
Gain & Return Loss w/ SDARS Tune [1]
Noise Figure vs. Vdd w/ SDARS Tune [2]
1.6
20
1.4
10
NOISE FIGURE (dB)
15
RESPONSE (dB)
AMPLIFIERS - LOW NOISE - SMT
25
S11
S22
S21
5
0
-5
-10
Vdd=5V
Vdd=3V
1.2
1
0.8
0.6
-15
0.4
-20
-25
2.25
2.3
2.35
FREQUENCY (GHz)
2.4
2.45
0.2
2.25
2.3
2.35
2.4
2.45
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6 Vdc
RF Input Power (RFIN)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 5.88 mW/°C above 85 °C)
0.38 W
Thermal Resistance
(Channel to Ground Paddle)
170 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
[1] Vdd = 5V
7-5
[2] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
AMPLIFIERS - LOW NOISE - SMT
7
Outline Drawing
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC667LP2
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC667LP2E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
667
XXX
[2]
667
XXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 3-Digit lot number XXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-6
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
AMPLIFIERS - LOW NOISE - SMT
7
7-7
Pin Descriptions
Pin Number
Function
Description
1, 2, 5
GND
These pins and package bottom must
be connected to RF/DC ground.
3
RFIN
This pin is DC coupled
See the application circuit for off-chip components
4
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
6
Vdd
Power supply voltage. Bypass capacitors
are required. See application circuit.
Interface Schematic
Components for Selected Band
Components
C1
L1
Broadband
2.7 pF
2.0 nH
Evaluation PCB Number
121891
SDARS
2.2 pF
4.3 nH
122404
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Evaluation PCB
List of Materials for Evaluation PCB [1]
Item
J1 - J2
Description
PCB Mount SMA Connector
J3 - J4
DC Pin
C1
2.7 pF Capacitor, 0402 Pkg.
C2
1000 pF Capacitor, 0402 Pkg.
C3
10 nF Capacitor, 0603 Pkg.
C4
2.2 μF Capacitor, CASE-A Tantalum
L1
2 nH Inductor, 0402 Pkg.
U1
HMC667LP2(E) Amplifier
PCB [2]
117163 Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[1] When requesting an evaluation board, please reference the
appropriate evaluation PCB number listed in the table
“Components for Selected Band” on previous page
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-8