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HMC451
v03.0913
LINEAR & POWER AMPLIFIER - CHIP
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Typical Applications
Features
The HMC451 is ideal for use as a driver amplifier for:
Gain: 22 dB
• Point-to-Point Radios
Saturated Output Power: +22 dBm @ 24% PAE
• Point-to-Multi-Point Radios & VSAT
Output IP3: +30 dBm
• Test Equipment & Sensors
Single Positive Supply: +5V @ 127mA
• LO Driver for HMC Mixers
50 Ohm Matched Input/Output
• Military & Space
Small Size: 1.27 x 1.27 x 0.1 mm
Functional Diagram
General Description
The HMC451 is a general purpose GaAs PHEMT
MMIC Medium Power Amplifier which operates
between 5 and 20 GHz. The amplifier provides
22 dB of gain, +22 dBm of saturated power at 24%
PAE from a +5V supply. Consistent gain and output
power across the operating band make it possible to
use a common driver/LO amplifier approach in multiple radio bands. The HMC451 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs) due
to its small (1.61mm2) size, single supply operation
and DC blocked I/Os. All data is tested with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length <0.31mm
(<12 mils).
Electrical Specifications, TA = +25° C, Vdd1, Vdd2 = +5V
Parameter
Min.
Frequency Range
Gain
19
Gain Variation Over Temperature
Max.
Min.
22
0.03
Typ.
Max.
Min.
15 - 18
17
0.04
20
0.03
15
0.04
Typ.
Max.
Units
18 - 20
GHz
18
dB
0.03
0.04
dB/ °C
Input Return Loss
14
11
8
dB
Output Return Loss
16
11
8
dB
20
dBm
Output Power for 1 dB
Compression (P1dB)
17
20
17
20
17
Saturated Output Power (Psat)
22
21
21
dBm
Output Third Order Intercept (IP3)
32
30
30
dBm
Noise Figure
Supply Current (Idd)
1
Typ.
5 - 15
7
127
6
150
127
6.5
150
127
dB
150
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC451
v03.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
25
28
24
10
20
5
GAIN (dB)
RESPONSE (dB)
15
0
-5
16
12
-10
8
-15
-20
4
-25
-30
0
3
5
7
9
11
13
15
17
19
21
23
25
4
6
8
10
FREQUENCY (GHz)
S21
12
14
16
18
20
22
FREQUENCY (GHz)
S11
S22
+25C
Input Return Loss vs. Temperature
+85C
-55C
Output Return Loss vs. Temperature
0
0
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
-10
-15
-20
-10
-15
-20
-25
-30
-35
-25
-40
4
6
8
10
12
14
16
18
20
4
22
6
8
10
FREQUENCY (GHz)
+25C
+85C
-55C
+25C
Output P1dB vs. Temperature
14
16
18
20
22
+85C
-55C
Output Psat vs. Temperature
28
28
24
24
20
20
Psat (dBm)
P1dB (dBm)
12
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIER - CHIP
20
16
12
16
12
8
8
4
4
0
0
4
6
8
10
12
14
16
18
20
22
4
6
8
10
FREQUENCY (GHz)
+25C
+85C
12
14
16
18
20
22
FREQUENCY (GHz)
-55C
+25C
+85C
-55C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC451
v03.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Power Compression @ 10 GHz
Power Compression @ 20 GHz
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
28
24
20
16
12
8
4
0
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
24
20
16
12
8
4
0
-18
6
-14
-10
INPUT POWER (dBm)
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm)
-2
2
6
Gain (dB)
PAE (%)
Noise Figure vs. Temperature
38
11
10
9
NOISE FIGURE (dB)
34
30
26
22
8
7
6
5
4
3
2
1
18
0
4
6
8
10
12
14
16
18
20
22
4
6
8
10
FREQUENCY (GHz)
+25C
+85C
16
18
20
22
0
24
-10
23
-20
22
21
+85C
-55C
Reverse Isolation vs. Temperature
ISOLATION (dB)
GAIN (dB), P1dB (dBm), Psat (dBm)
14
+25C
-55C
25
-30
-40
20
-50
19
-60
18
4.5
12
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage @ 10 GHz
-70
5
5.5
4
7
10
Gain
P1dB
13
16
19
22
FREQUENCY (GHz)
Vdd SUPPLY VOLTAGE (V)
3
-6
INPUT POWER (dBm)
Output IP3 vs. Temperature
IP3 (dBm)
LINEAR & POWER AMPLIFIER - CHIP
28
Psat
+25C
+85C
-55C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC451
v03.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Drain Bias Voltage (Vdd)
+5.5 Vdc
Vdd (V)
Idd (mA)
RF Input Power (RFIN)(Vdd = +5Vdc)
+10 dBm
+4.5
125
Channel Temperature
175 °C
+5.0
127
+5.5
129
Continuous Pdiss (T= 85 °C)
(derate 13 mW/°C above 85 °C)
1.2 W
Thermal Resistance
(channel to die bottom)
75 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
LINEAR & POWER AMPLIFIER - CHIP
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC451
v03.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
LINEAR & POWER AMPLIFIER - CHIP
Pad Descriptions
5
Pad Number
Function
Description
1
RFIN
This pad is AC coupled and matched to 50 Ohms.
1, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 µF are required.
4
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Die Bottom
GND
Die Bottom must be connected to RF/DC Ground.
Pin Schematic
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC451
v03.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or fingers.
LINEAR & POWER AMPLIFIER - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started
on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6