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HMC716LP3E
v03.1113
LOW NOISE AMPLIFIERS - SMT
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Typical Applications
Features
The HMC716LP3E is ideal for:
Noise Figure: 1 dB
• Fixed Wireless and LTE/WiMAX/4G
Gain: 18 dB
• BTS & Infrastructure
Output IP3: +33 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Public Safety Radio
50 Ohm Matched Input/Output
• Access Points
16 Lead 3x3mm QFN Package: 9 mm2
Functional Diagram
General Description
The HMC716LP3E is a GaAs pHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 3.1 and 3.9 GHz. The amplifier
has been optimized to provide 1 dB noise figure,
18 dB gain and +33 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC716LP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Electrical Specifi cations
TA = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [1]
Parameter
Vdd = +3V
Min.
Frequency Range
Gain
Typ.
13
17
1
Input Return Loss
25
Output Return Loss
15.5
1.3
15
26
Supply Current (Idd)
41
MHz
18
dB
dB/ °C
1.3
dB
dB
16
dB
19
dBm
20.5
dBm
33
55
Units
0.01
1
16
16.5
Output Third Order Intercept (IP3)
Max.
30
13
12
Typ.
3.1 - 3.9
0.01
Noise Figure
Saturated Output Power (Psat)
Min.
3.1 - 3.9
Gain Variation Over Temperature
Output Power for 1 dB Compression (P1dB)
Vdd = +5V
Max.
65
dBm
90
mA
[1] Rbias resistor sets current, see application circuit herein
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Broadband Gain & Return Loss [1] [2]
Gain vs. Temperature [1]
30
24
S21
10
0
S22
-10
-20
20
18
16
S11
5V
3V
-30
14
-40
12
1
2
3
4
5
6
FREQUENCY (GHz)
7
8
Gain vs. Temperature [2]
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
Input Return Loss vs. Temperature [1]
26
0
24
RETURN LOSS (dB)
+25C
+85C
-40C
22
GAIN (dB)
+25C
+85C
-40C
22
GAIN (dB)
RESPONSE (dB)
20
20
18
16
+25C
+85C
-40C
-10
-20
LOW NOISE AMPLIFIERS - SMT
26
-30
14
12
-40
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
Output Return Loss vs. Temperature [1]
3
3.4
3.6
FREQUENCY (GHz)
3.8
4
Reverse Isolation vs. Temperature [1]
-15
0
+25C
+85C
-40C
-20
+25C
+85C
-40C
ISOLATION (dB)
-5
RETURN LOSS (dB)
3.2
-10
-15
-20
-25
-30
-35
-40
-45
-25
3
3.2
3.4
3.6
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 820 Ω
3.8
4
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
[2] Vdd = 3V, Rbias = 47k Ω
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
2
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Noise Figure vs. Temperature [1] [2] [4]
P1dB vs. Temperature [1] [2]
24
Vdd=5V
21
1.2
P1dB (dBm)
NOISE FIGURE (dB)
+85C
+25C
1.5
0.9
18
Vdd=3V
15
0.6
-40C
12
Vdd=5V
Vdd=3V
0.3
0
9
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
+25C
+85C
-40C
3
3.2
3.4
3.6
3.8
4
FREQUENCY (GHz)
Psat vs. Temperature [1] [2]
Output IP3 vs. Temperature [1] [2]
24
45
Vdd=5V
+25C
+85C
-40C
41
21
Vdd=5V
37
IP3 (dBm)
Psat (dBm)
LOW NOISE AMPLIFIERS - SMT
1.8
18
15
33
29
Vdd=3V
12
+25C
+85C
-40C
25
Vdd=3V
9
21
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
3
3.4
3.6
FREQUENCY (GHz)
3.8
4
Output IP3 and Supply Current vs.
Supply Voltage @ 3800 MHz [3]
36
95
34
80
34
80
32
65
32
65
30
50
30
50
Idd
IP3
28
26
24
2.7
3.1
3.5
3.9
4.3
4.7
5.1
IP3 (dBm)
95
35
28
20
26
5
24
5.5
VOLTAGE SUPPLY (V)
2.7
Idd
IP3
35
20
5
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
[1] Vdd = 5V, Rbias = 820 Ω
[2] Vdd = 3V, Rbias = 47kΩ
[3] Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V
[4] Measurement reference plane shown on evaluation PCB drawing.
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Idd (mA)
36
Idd (mA)
IP3 (dBm)
Output IP3 and Supply Current vs.
Supply Voltage @ 3300 MHz [3]
3.2
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Power Compression @ 3300 MHz [2]
Power Compression @ 3300 MHz [1]
35
Pout
Gain
PAE
30
25
20
15
10
5
0
-5
-20
-15
-10
-5
INPUT POWER (dBm)
0
Pout (dBm), GAIN (dB), PAE (%)
30
25
20
15
10
5
0
Pout
Gain
PAE
-5
-16
-12
-8
-4
0
INPUT POWER (dBm)
4
10
5
Pout
Gain
PAE
0
-16
-14 -12 -10 -8
-6
-4
INPUT POWER (dBm)
-2
0
2
24
22
P1dB
Gain
0.8
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
[1] Vdd = 5V, Rbias = 820 Ω
-15
-10
-5
INPUT POWER (dBm)
0
5
[2] Vdd = 3V, Rbias = 47k Ω
1.4
1.3
P1dB
Gain
19
1.2
17
1.1
15
1
13
0.9
NF
0.8
11
2.7
NOISE FIGURE (dB)
0.9
NOISE FIGURE (dB)
1
3.9
Pout
Gain
PAE
-4
21
16
3.5
2
1.3
1.1
3.1
8
23
18
12
14
1.4
1.2
NF
20
Gain, Power & Noise Figure
vs. Supply Voltage @ 3800 MHz [3]
20
14
26
-10
-20
8
GAIN (dB) & P1dB (dBm)
Pout (dBm), GAIN (dB), PAE (%)
15
32
Gain, Power & Noise Figure
vs. Supply Voltage @ 3300 MHz [3]
GAIN (dB) & P1dB (dBm)
20
Power Compression @ 3800 MHz [2]
35
2.7
25
-5
-20 -18
5
Power Compression @ 3300 MHz [1]
-10
-20
30
LOW NOISE AMPLIFIERS - SMT
35
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
40
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
[3] Rbias = 820 Ω for Vdd = 5V, Rbias = 47k for Vdd 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
4
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Gain, Noise Figure & Rbias @ 3300 MHz
Output IP3 vs. Rbias @ 3300 MHz
Vdd=3V
Vdd=5V
32
GAIN (dB)
IP3 (dBm)
Vdd=3V
Vdd=5V
20
36
28
24
20
100
1.3
22
1000
10000
18
1.2
16
1.15
14
1.1
12
1.05
1
10
100000
100
Rbias (Ohms)
1.25
1000
10000
100000
Rbias (Ohms)
Gain, Noise Figure & Rbias @ 3800 MHz
Output IP3 vs. Rbias @ 3800 MHz
40
GAIN (dB)
IP3 (dBm)
28
10000
Rbias (Ohms)
100000
1.2
16
1.15
14
1.1
12
1.05
10
1
0.95
8
100
1000
10000
100000
Rbias (Ohms)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
NOISE FIGURE (dB)
32
1000
Vdd=3V
Vdd=5V
18
Vdd=3V
Vdd=5V
36
20
100
1.25
20
24
5
NOISE FIGURE (dB)
LOW NOISE AMPLIFIERS - SMT
40
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Rbias (Ω)
Vdd (V)
Min
Max
Recommended
2.2k
3V
2k
5V
[1]
Open Circuit
0
Open Circuit
Idd (mA)
20
5.6k
30
47k
41
270
48
820
65
2.2k
81
[1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5V
RF Input Power (RFIN)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 11.1 mW/°C above 85 °C)
0.72 W
Thermal Resistance
(channel to ground paddle)
90 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
LOW NOISE AMPLIFIERS - SMT
Absolute Bias Resistor
Range & Recommended Bias Resistor Values
Typical Supply Current vs. Supply Voltage
(Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V)
Vdd (V)
Idd (mA)
2.7
31
3.0
41
3.3
51
4.5
51
5.0
65
5.5
80
Note: Amplifi er will operate over full voltage ranges shown above.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
6
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
LOW NOISE AMPLIFIERS - SMT
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC716LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[2]
Package Marking [3]
716
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Pin Descriptions
Function
Description
1, 3 - 7, 9, 10,
12 - 14, 16
N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
2
RFIN
This pin is DC coupled. An off chip
DC blocking capacitor is required.
11
RFOUT
This pin is AC coupled and matched to 50 Ohms.
8
RES
This pin is used to set the DC current of the amplifier by
selection of external bias resistor. See application circuit.
15
Vdd
Power supply voltage. Bypass capacitors are required.
See application circuit.
GND
Ground paddle must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
Pin Number
8
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
LOW NOISE AMPLIFIERS - SMT
Application Circuit
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
HMC716LP3E
v03.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
LOW NOISE AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 122540
Item
Description
J1, J2
PCB Mount SMA Connector
J3, J4
DC Pin
C1
10 nF Capacitor, 0402 Pkg.
C2
1000 pF Capacitor, 0603 Pkg.
C3
0.47 µF Capacitor, 0603 Pkg.
C4
100 pF Capacitor, 0402 Pkg.
R1
820Ω Resistor, 0402 Pkg.
R2
0 Ohm Resistor, 0402 Pkg.
U1
HMC716LP3E Amplifier
PCB [2]
122490 Evaluation PCB
[1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
10