Physica C 298 Ž1998. 166–172 Tl 2 Ba 2 CaCu 2 O 8yx superconducting films deposited by aerosol and their hysteretic ac losses A. Conde-Gallardo a a,b , T. Klein a,) , C. Escribe-Filippini a , J. Marcus a , T. Lopez-Rios a , M. Jergel b Laboratoire d’Etudes des proprietes ´ ´ Electroniques des Solides, Centre National de la Recherche Scientifique, BP166, 38042 Grenoble Cedex 9, France b Departamento de F’sica, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07300, Mexico ´ Received 2 August 1997; revised 20 November 1997; accepted 8 December 1997 Abstract ac susceptibility measurements have been performed on Tl 2 Ba 2 CaCu 2 O 8yx superconducting films. The films were grown in two steps: first Ba–Ca–Cu–Ag–O precursor films have been prepared by spraying an aerosol on MgO substrates and the Tl was then subsequently introduced by diffusion into the precursor films. The most favourable preparation conditions have been determined by comparing the structural and magnetic properties of the films. A detailed study of the ac susceptibility shows that the ac losses are due to intragrain bulk hysteretic pinning eventhough small geometrical barriers contributions could also be observed. q 1998 Elsevier Science B.V. PACS: 74.75; 74.60G; 74.30G Keywords: Tl-2212 films; ac susceptibility; Flux pinning; ac losses 1. Introduction High critical temperature ŽHTc. superconducting tapes Ži.e., films. have been proposed as an alternative to long wires for high-current, high-fields applications w1,2x. In this context, thallium-based films ŽTl–Ba–Ca–Cu–O. are of great interest since they present at least four stable phases with Tc ) 100 K. It is thus important to perform a detailed characterization of their ac response in order to get a better insight of the ac losses due to weak link junctions, ) Corresponding author. Fax: q33-4-76-88-76-88; e-mail: klein@lepes.polycnrs-gre.fr. flux flow losses andror hysteretic losses by flux pinning. Several techniques have been used to grow HTc superconducting films however, one of the most promising one is the spray pyrolysis Žaerosol. technique w1,2x. Indeed this technique is the simplest and less expensive way to get films. In the present paper, we present a detailed study of Tl 2 Ba 2 CaCu 2 O 8yx films grown by a combined aerosol deposition and thallium diffusion process. We have determined the best technological conditions for preparing the samples by comparing their morphology, structural and magnetic properties. We show that those films present very sharp transitions in ac susceptibility which are broadening up as the amplitude of the ac modula- 0921-4534r98r$19.00 q 1998 Elsevier Science B.V. All rights reserved. PII S 0 9 2 1 - 4 5 3 4 Ž 9 7 . 0 1 8 8 8 - 1 A. Conde-Gallardo et al.r Physica C 298 (1998) 166–172 Table 1 Annealing conditions of the different samples Sample Temperature ŽTa . Ž8C. Time Ž ta . Žmin. S1 S2 S3 S4 S5 854 854 854 854 854 y2 2 5 8 30 S6 sS2 S7 S8 854 859 870 2 2 2 167 mechanism is predominant in our samples. Finally, geometrical barrier pinning is known to play an important role in the BiSrCaCuO w9,10x family and we will thus discuss the origin of the intragrain pinning in the Tl-2212 compound. 2. Sample preparation and experiments The annealing time is counted after the stabilization of the furnace temperature. y2 min means that for this sample the annealing temperature Ž8548C. was not yet reached. tion field is increased as expected for weak bulk pinning. In ac susceptibility measurements, the real Ž x X . and imaginary Ž x Y . part reflect the superconducting shielding capabilities and the ac losses respectively. Some particular features in x X and x Y can be used for detecting intergranular as well as intragranular properties w3,4x. Usually, in granular superconductors, the intragrain shielding currents are larger than the intergranular ones which have to cross the junction boundaries. If those two mechanisms of shielding are present, x X presents two steps corresponding to the intragrain superconducting transition temperature and the temperature below which the current is able to flow through the junctions respectively. Correspondingly, x Y shows two peaks which are related to the energy losses due to the intragrain vortex pinning and the junction resistance w3–8x respectively. We will show that the intragrain pinning We report here only a short description of the sample preparation, more details can be found elsewhere w11x. Due to the thallium volatility and toxicity, the films have been prepared in a two-step procedure. First, a Ba–Ca–Cu–Ag–O precursor film is deposited on a ; 5 = 3 mm2 MgO substrate using an ultrasonically generated aerosol. This aerosol has been obtained from a solution of BaŽNO 3 . 2 , CaŽNO 3 . 2 P H 2 O, CuŽNO 3 . 2 P 3H 2 O and AgŽNO 3 . 2 dissolved at 0.03 M in a 2:2:3:0.3 ratio in order to synthesize the Tl 2 Ba 2 Ca 2 Cu 3 O 10 phase which has the highest Tc . Silver has been added because it is known to contribute to a better nucleation and intergrain coupling in the case of thallium-based superconducting films w12x. This precursor film has been subsequently preannealed at 8508C in air for 30 min in order to complete the homogenization of the starting materials. The thallium is then introduced in the film through a diffusion process by annealing the precursor film in the presence of a Tl 2 O source under oxygen flow. The film and the thallium source were kept at the same temperature ŽTa . in a one zone reactor chamber. Under these conditions, the thallium is diffusing into the film and the superconducting structure is developed simultaneously. The annealing temperatures ŽTa . and times Ž ta . are reported Table 2 Transition temperature Tc , EDAX analysis, lattice parameters and relative orientation determined as the ratio of the Ž0012. and the Ž107. X-ray intensity peaks Sample Tc Composition Lattice parameters Ž0012.rŽ107. X-ray intensity Tl Ba Ca Cu ˚. aŽA ˚. cŽA S1 S2 S3 S4 S5 101.1 99.9 101.8 100.9 103.3 28.6 22.9 22.5 18.3 20.3 21.3 28.9 24.1 22.1 24.1 32.8 34.1 16.7 26.8 23.3 33.2 3.84 3.84 3.84 3.84 3.84 29.17 29.18 29.15 29.15 29.16 6 16 20 37 37 S6 S7 S8 101.8 100.0 95.3 22.9 26.1 26.3 20.3 21.1 16.4 24.1 23.3 29.9 32.8 29.5 27.5 3.84 3.84 3.84 29.18 29.14 29.13 16 30 168 A. Conde-Gallardo et al.r Physica C 298 (1998) 166–172 in Table 1. The resulting film thickness is around 5 m m. The films were then characterized by various techniques: Ži. the cell parameters and the grain orientation of the different phases have been determined by X-ray diffraction using the Cu K a radia˚ .; Žii. the morphology and chemtion Ž l s 1.54051 A ical composition have been determined by scanning electron microscopy and EDAX analysis; Žiii. the real and imaginary parts of the ac susceptibility have been measured with a home made spectrometer. The modulation field Ž10 kHz. was perpendicular to the film surface and its amplitude has been changed from 0.05 to 2.5 Oe. The ac susceptibility has also been measured in a constant magnetic field up to 5 T parallel to the c-axis of the films in order to get an estimation of the position of the irreversibility line. 3. Characterization The critical temperatures measured by ac susceptibility, the lattice parameters, as well as the average chemical composition measured on a 1 mm2 surface are reported on Table 2. The transition temperatures of the films Žonset of x X . are ranging between 95 and 103 K which is close to the Tc of the best films obtained by laser ablation or sputtering Ž106 K. w12–14x. From the EDAX analysis, it can be seen that the Tl:Ba:Ca:Cu average ratio is close to 2:2:2:3 for samples S 2 and S 3 as expected from the initial composition of the precursor film. However a more punctual analysis Ž1 m m2 . suggests that the film is actually constituted of 2212 grains and a small amount of Ca andror Cu rich extra phases. This is in good agreement with the X-ray diffraction spectra which can be well indexed using the 2212 indexation scheme ŽFig. 1. as well as with Raman spectroscopy which presents the characteristic vibrational modes of this phase. Some of the 2223 peaks however appear on the X-ray spectra ŽFig. 1. of sample S 5 Žlong annealing time. suggesting that the growing kinetic of this phase is probably slower than the one of the 2212 phase Ža similar result has been observed in Refs. w13,14x.. As shown on Fig. 2, under those conditions, the diffusion time has a great influence on the morphology of the films. Indeed it is leading to a progressive destruction of the smooth morphol- Fig. 1. X-ray diffraction patterns for films S3 and S5. The c-axis orientation is indicated by the dominant presence of Ž001. peaks. Similar results were obtained for the other samples Žsee tables.. Some small 2223 peaks are present in sample S5 Žsee the inset.. ogy of the precursor film as the growth of the 2212 crystallites takes place. Moreover, rather high Tl average ratio and extra phases become visible on the X-ray spectra for samples S 1 , S 7 and S 8 which suggests that the best annealing conditions for Tl diffusion in order to get the 2212 phase are Ta ; 8548C and ta ; 5 to 8 min. Table 2 also shows that those annealing conditions lead to highly c-axis oriented polycrystalline grains. Indeed the intensity ratio between the Ž00 l . Ždata are given for l s 12 in Table 2. and the Ž107. peaks reaches its maximum after about 8 min. The Ž107. peak has been chosen for this comparison because it has a 100% intensity for random orientation. The renormalized real part of the first harmonic of the ac susceptibility as a function of temperature is A. Conde-Gallardo et al.r Physica C 298 (1998) 166–172 169 later, this enlargement is related to the weakness of pinning and the width of the transitions actually becomes small for all samples when the ac modulation field is decreased Žsee Fig. 3b.. This shows that the distribution in Tc is rather small in all films indicating that they are quite homogeneous as far as their superconducting properties are concerned. The width of the transition is increasing much slower in S 2 and S 3 suggesting that pinning is more efficient in those films which makes them more favourable for applications. Those samples have also a rather good chemical composition and crystalline orientation, as we have seen in the previous paragraph. We Fig. 2. SEM photographs for samples annealed at 8548C for ta s 2, 5 and 30 min. The effect of the annealing time on the morphology is evident. Similar behaviour is obtained if ta is fixed and the annealing temperature is changed Žsamples S6, S7 and S8 of Table 1.. presented on Fig. 3a for some characteristic samples Žsee Table 2.. Samples S 5 and S 1 apparently present a rather large transition. However, as we will see X Fig. 3. Ža. Renormalized real part of the ac susceptibility x vs T at h ac s 0.05 Oe. Žb. Width of the transition vs. h ac . The narrowest transitions are obtained for sample S3 but, in any case, DTc goes to zero as h ac tends towards 0 indicating that the enlargement is related to the weakness of pinning rather than to sample inhomogeneities. A. Conde-Gallardo et al.r Physica C 298 (1998) 166–172 170 X Fig. 4. Onset of x vs. dc field for the samples S2. As usually observed in the Tl 2 Ba 2 CaCu 2 O 8yx , this line is rather low. tion field. As can be seen, the peak in x Y is very close to the y0.4 value as predicted w16,17x and observed in YBaCuO films w18x for intragranular contributions. For intergranular coupling we would have expected the x Y peak to lie close to the 0.9 value, i.e., in the tail of the x X transition w5x. Note however that x Y becomes quite asymmetric for large h ac values suggesting that a second contribution, characteristic of small intergranular effect, may appear for large h ac . The origin of pinning in high Tc is still an open question; it has been shown in BiSrCaCuO that this pinning is due to potential barriers of geometrical origin w9,10x whereas the ac response of YBaCuO films has been interpreted recently in term of bulk pinning in the critical state w18x. The plot of x X and x Y as function of modulation field h ac , at a given will thus present in Section 4 a systemic study of the ac susceptibility in those films ŽS 2 will be taken as an example but very similar results have been obtained in S 3 .. As shown in Fig. 4 for sample S 2 , the position of the onset in x X is shifting very rapidly towards lower temperature as a dc magnetic field is applied. This is in agreement with measurements performed in bulk Tl-based samples which have shown that the irreversibility line of this highly anisotropic compound is very low w15x. 4. Magnetic susceptibility and ac losses The real and imaginary parts of the ac susceptibility as a function of temperature for various amplitudes of the modulation field are presented on Figs. 5a and 5b respectively. As already mentioned, the x X transition is broadening as h o is increased and the peak in the x Y becomes broader and shifts towards lower temperatures. But even for our highest h ac values there is no evidence for two steps in x X or two peaks in x Y as would be expected in the presence of both intra and intergranular effects Žsee Section 1.. To distinguish between those two contributions we have plotted on Fig. 6, the temperatures where x X reaches y0.1, y0.4 and y0.9 as well as the temperature corresponding to the maximum of x Y as a function of the amplitude of the ac modula- Fig. 5. Ža. Real and Žb. imaginary parts of ac susceptibility for sample S2 for different amplitudes Ž h ac . of the modulation field. Similar results were obtained for the others samples in Table 1. Only one transition can be observed. A. Conde-Gallardo et al.r Physica C 298 (1998) 166–172 X Fig. 6. Temperatures where x is equal to y0.1, y0.4 and y0.9 Y values and temperature Tma x where x gets its maximum Žsee Fig. 4., as a function of the amplitude Ž h ac . of modulation field. As expected for intrinsic granular effect w14,15x, Tma x is close to X the y0.4 x values. The lines are only guides to the eyes. 171 tal data, as expected for bulk pinning the maximum value for x Y is , 0.24. However, as seen on Fig. 7, a clear deviation can be seen for the low h acrh m values. Indeed both x X and x Y present a rather sharp onset, characteristic of geometrical barriers w9,10x. Geometrical barriers are known to play an important role in the BiSrCaCuO compound w9,10x in which bulk pinning only governs the irreversibility properties below 22 K. It is thus not surprising to find geometrical barrier contributions in our Tl-2212 system of very similar structure. Those contributions are expected to become negligible in very thin films Žthicknessrwidth - 10y3 . and are thus expected to give some minor contribution in our films. However any quantitative analysis has to be taken with caution given the granular morphology of our films. We can thus conclude that the ac response of our thallium films is related to intragran- temperature, can help to distinguish the pinning mechanism. x X and x Y as a function of h ac rh m , where h m is the field of maximum dissipation for a given temperature, are presented on Fig. 6. As can be seen, all the curves collapse on a single one for a very large temperature range indicating that thermally activated processes do not contribute to the ac response. Several theoretical models for the response of superconducting films under a perpendicular Žto the surface. ac applied magnetic field have been published w16,17,19–22x for both geometrical barriers and bulk pinning. Brandt w17x has predicted that, for a thin strip Žit actually depends only very weakly on the shape of the film., the ac response for bulk pinning is given by: xYs 4 2 px x ln cosh Ž x . y tanh Ž x . Ž 1. and xXsy 4 p H cos Ž a . tanh px 0 x sin2 Ž ar2 . d a Ž 2. with x s h ac rh c where h c s h m r2.46. The continuous lines in Fig. 7 are fits to the data using the above equations without any free parameter. As shown the fits are in rather good agreement with the experimen- X Y Fig. 7. x and x as function of the ratio h ac r h max , where h max Y correspond to the maximum in x . Independently of the temperature, all the curves collapse on the same one. The continuous lines are fits to data using the bulk pinning models w15x. 172 A. Conde-Gallardo et al.r Physica C 298 (1998) 166–172 ular pinning in the Bean modified model, even though small geometrical contribution can also be observed. According to Brandt’s calculations, the maximum of x Y should occur at h m s 0.78 Jc d, where d is the thickness of the film. Taking d s 5 m m and h m s 1.4 Oe at 80 K, one gets Jc ; 3 = 10 4 Arcm2 which is much smaller than the Jc values measured in Tl 2 Ba 2 CaCu 2 O 8 single crystals and epitaxial films w12,23,24x. 5. Conclusions We have established the best technological conditions to prepare Tl 2 Ba 2 CaCu 2 O 8 superconducting films, deposited by a combined aerosol precursor growth and Tl diffusion process, by correlating crystallographic and morphologic properties with ac susceptibility measurements. We have shown that the optimal conditions are around ta ; 5–8 min when the annealing temperature is Ta ; 8548C. The development of the 2212 Tl-based phase, is governed by the thermodynamics of the thallium diffusion rather than by the technological process of the precursor film. Indeed, the annealing conditions do not depend on the technique used to prepare the precursor w13– 15x. The behaviour of the real and imaginary parts of the ac susceptibility as a function of the amplitude of the applied magnetic field, has been used to establish which kind of the energy losses are present in our films; we have shown that the intragranular hysteretic process is predominant and, that both bulk and geometrical barriers pinning are present. Acknowledgements A. Conde-Gallardo is in post-doctoral position, under the economical support of CONACyT-Mexico. ´ References w1x M. Jergel, A. Conde-Gallardo, C. Falcony-Guajardo, Supercond. Sci. Technol. 9 Ž1996. 427. w2x J.A. DeLuca, P.L. Karas, J.E. Tkaczyk, P.J. Bednarczyk, M.F. Garbauskas, C.L. Briant, D.B. Sorensen, Physica C 205 Ž1993. 21. w3x J. Garcıa, ´ C. Rillo, F. Lera, J. Bartolome, ´ R. Navarro, D.H.A. Blank, J. Flokstra, J. Magn. Magn. Mater. 69 Ž1987. L225. w4x R.B. Goldfarb, M. Lelental, C.A. Thompson, in: R.A. Hein, T.L. Francavilla, D.H. Liebenberg ŽEds.., Magnetic Susceptibility of Superconductors and Other Spin Systems, Plenum, 1992. w5x Kupfer, I. Apfelstedt, R. Flukiger, C. Keller, R. Meier¨ ¨ Hirmer, B. Runtsch, A. Turowski, U. Wiech, T. Wolf, Cryogenics 28 Ž1988. 650. w6x E. Babic, Z. Marohnic, D. Prester, N. Brnicevic, Physica C 153r155 Ž1988. 1511. w7x R.B. Goldfarb, A.F. Clark, A.I. Braginski, A.J. Panson, Cryogenics 27 Ž1987. 475. w8x B. Loegel, D. Bolmont, A. Mehdaqui, Physica C 159 Ž1989. 816. w9x E. Zeldov, D. Majer, M. Konczykowsky, A.I. Larkin, V.M. Vinokur, V.B. Geshkensein, N. Chikumoto, H. Shtrekman, Europhys. Lett. 30 Ž1995. 367. w10x M. Wurlitzer, F. Mrowka, P. Esquenazi, K. Rogacki, B. Dabrowski, E. Zeldov, T. Tamegai, S. Oai, Z. Phys. B 101 Ž7. Ž1996. 561. w11x M. Jergel, F. Hanic, G. Plesch, V. Strbik, J. Liday, C. Falcony Guajardo, G. Contreras Puente, Supercond. Sci. and Technol., 1994, p. 931. w12x C.L. Briant, J.A. DeLuca, P.L. Karas, M.F. Garbauskas, J.A. Sutliff, A. Gyal, Kroeger, J. Matter Res. 10 Ž1995. 823. w13x Y.Q. Tang, Z.Z. Sheng, W.A. Luo, I.N. Chan, Z.Y. Chen, Y.F. Li, D.O. Pederson, Physica C 214 Ž1993. 190. w14x J. Chrzanowski, S. Meng-Burany, W.B. Xing, A.E. Curzon, J.C. Irwin, B. Heinrich, R.A. Cragg, N. Fortier, F. Habib, V. Angus, G. Anderson, A.A. Fife, Supercond. Sci. Technol. 9 Ž1996. 113. w15x A. Wahl, A. Maignan, C. Martin, V. Hardy, J. Provost, Ch. Simon, Phys. Rev. B, 1995, p. 9123. w16x J.R. Clem, A. Sanchez, Phys. Rev. B 50 Ž1994. 9355. w17x E.H. Brandt, M.V. Indenbom, A. Forkl, Europhys. Lett. 22 Ž1993. 735. w18x W. Wurlitzer, M. Lorez, K. Zimmer, P. Esquinazi, Phys. Rev. B 55 Ž1997. 11816. w19x E.H. Brandt, Phys. Rev. B 49 Ž1994. 9024. w20x P.N. Mikheenko, E. Kuzovlev, Physica C 204 Ž1993. 735. w21x J.R. Clem, in: R.A. Hein, T.L. Francavilla, D.H. Liebenberg ŽEds.., Susceptibility of Superconductors and Other Spin Systems, Plenum, 1992. w22x J.Z. Sun, M.J. Scharen, L.C. Bourne, J.R. Schrieffer, Phys. Rev. B, 1991, p. 5275. w23x H.H. Wen, R.L. Wang, H.C. Li, B. Yin, S.Q. Guo, Z.X. Zhao, S.L Yan, L. Fang, M.S. Si, Phys. Rev. B 54 Ž1996. 1386. w24x W.L. Holtein, C. Wilker, D.B. Laubacher, D.W. Face, P. Pang, M.S. Warrington, C.F. Carter, L.A. Parisi, J. Appl. Phys. 74 Ž1993. 1426.