Metal-semiconductor junctions
FYS 4310
Jan H. Bleka
May 2005
Fys 4310
Electrical Contacts - p. 1/16
Metal- 12 -cond. junctions
There are two kinds of possible contacts between
metals and 12 -cond. Which is formed depends on
the difference in work functions.
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 2/16
Metal- 12 -cond. junctions
There are two kinds of possible contacts between
metals and 12 -cond. Which is formed depends on
the difference in work functions.
The two are
■ Schottky contacts, where the charge carriers can
be more easily moved from the 12 -cond. to the
metal than vice versa
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 2/16
Metal- 12 -cond. junctions
There are two kinds of possible contacts between
metals and 12 -cond. Which is formed depends on
the difference in work functions.
The two are
■ Schottky contacts, where the charge carriers can
be more easily moved from the 12 -cond. to the
metal than vice versa
■ Ohmic contacts, which are not really ohmic in the
real world, but are much less rectifying than the
Schottky contact
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 2/16
Schottky contacts
What happens when joining a metal and a
1
-cond. (φm > φs )?
2
Ec
Ev
φm > φ s
φn
φb
χs
φs
Ec
EF,s
φm
V0
EF,m
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
φn
Ev
EF
Fys 4310
metal
n-type 12 -cond.
Electrical Contacts - p. 3/16
φs
metal
n-type 12 -cond.
Schottky contacts
What happens when φjoining
a metal and a
m > φs
1
-cond. (φm > φs )?
χs
2
EF,m
EF,s
Ec
Ev
Ec
φm > φ s
φn
φb
Ev
χs
φn
Ec
EF,s
Fys 4310
φb
V0
Ec
EF
φn
Ev
EF
+
+
+
φs
φm
V0
EF,m
−
−
−
metal
n-type 12 -cond.
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
φn
Ev
Electrical Contacts - p. 3/16
Forward bias
Applying a positive potential to the metal, causes a
flow of electrons to that side
−
−
−
Sfrag replacements
+
+
+
φb
V0 − V a
EF,m
Ec
EF,s
Ev
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
qVa
I = I0 exp
−1
kT
Fys 4310
Electrical Contacts - p. 4/16
Forward bias
Applying a positive potential to the metal, causes a
flow of electrons to that side
−
−
−
Sfrag replacements
+
+
+
φb
EF,m
V0 − V a
Ec
EF,s
Ev
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
qVa
qVa
I = I0 exp
− 1 ≈ I0 exp
kT
kT
Fys 4310
Electrical Contacts - p. 4/16
Reverse bias
Applying a positive potential to the 12 -cond. does
not cause a large change in the current
−
−
−
Sfrag replacements
+
+
+
φb
V0 − V a
EF,m
Ec
EF,s
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Ev
qVa
I = I0 exp
−1
kT
Fys 4310
Electrical Contacts - p. 5/16
Reverse bias
Applying a positive potential to the 12 -cond. does
not cause a large change in the current
−
−
−
Sfrag replacements
+
+
+
φb
EF,m
V0 − V a
Ec
EF,s
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Ev
qVa
I = I0 exp
− 1 ≈ −I0
kT
Fys 4310
Electrical Contacts - p. 5/16
IV of Schottky contacts
Thus, a Schottky contact gives IV characteristics
with properties similar to that of a pn junction
I
PSfrag replacements
Va
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
qVa
−1
I = I0 exp
kT
Fys 4310
Electrical Contacts - p. 6/16
Real-life problems
qVa
I = I0 exp
−1
kT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 7/16
Real-life problems
qVa
I = I0 exp
−1
kT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
■ Schottky effect (image-force & E-field lowering)
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 7/16
Real-life problems
qVa
I = I0 exp
−1
kT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
■ Schottky effect (image-force & E-field lowering)
■ Series and parallel resistance
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 7/16
Real-life problems
qVa
I = I0 exp
−1
kT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
■ Schottky effect (image-force & E-field lowering)
■ Series and parallel resistance
■ Presence of other mechanisms
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 7/16
Real-life problems
qVa
I = I0 exp
−1
kT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
■ Schottky effect (image-force & E-field lowering)
■ Series and parallel resistance
■ Presence of other mechanisms
■ Inhomogeneous barrier height
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 7/16
Real-life problems
qVa
I = I0 exp
−1
kT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
■ Schottky effect (image-force & E-field lowering)
■ Series and parallel resistance
■ Presence of other mechanisms
■ Inhomogeneous barrier height
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Abay et al., Semicond. Sci. Technol. 18 (2003) 75
Fys 4310
Electrical Contacts - p. 7/16
Real-life problems
qVa
I = I0 exp
−1
ηkT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
■ Schottky effect (image-force & E-field lowering)
■ Series and parallel resistance
■ Presence of other mechanisms
■ Inhomogeneous barrier height
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Abay et al., Semicond. Sci. Technol. 18 (2003) 75
Fys 4310
Electrical Contacts - p. 7/16
Real-life problems
qVa
I = I0 exp
−1
ηkT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
■ Schottky effect (image-force & E-field lowering)
■ Series and parallel resistance
■ Presence of other mechanisms
■ Inhomogeneous barrier height
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Abay et al., Semicond. Sci. Technol. 18 (2003) 75
■
Image-force-induced barrier lowering
Fys 4310
Electrical Contacts - p. 7/16
Real-life problems
qVa
I = I0 exp
−1
ηkT
!
Several authors have identified the most important
causes of non-ideal IV behaviour to be:
■ Schottky effect (image-force & E-field lowering)
■ Series and parallel resistance
■ Presence of other mechanisms
■ Inhomogeneous barrier height
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Abay et al., Semicond. Sci. Technol. 18 (2003) 75
■
■
Image-force-induced barrier lowering
Surface states
Fys 4310
Electrical Contacts - p. 7/16
Image-force-induced barrier lowering
A charge in the proximity of a metal induces an
attractive mirror charge in the metal
ag replacements
φb
V0
Ec
EF
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Ev
Fys 4310
Electrical Contacts - p. 8/16
Image-force-induced barrier lowering
A charge in the proximity of a metal induces an
attractive mirror charge in the metal
ag replacements
φb
V0
Ec
EF
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Ev
Fys 4310
Electrical Contacts - p. 8/16
Surface states
There is also band bending due to surface states.
Electrons occupy the lower surface states and
thereby lower the Fermi level.
ag replacements
Ec
EF
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Ev
Fys 4310
Electrical Contacts - p. 9/16
Ohmic contacts
1
-cond.
2
devices usually need to be connected to
the rest of the world. Ohmic contacts are preferred,
because then the voltage is, ideally, proportional to
the current and nonlinear elements are not
introduced into the circuit.
There are two general types of ohmic contacts that
are possible:
■ Non-rectifying barriers
■ Tunneling barriers
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 10/16
Ideal, non-rectifying barrier
Ec
Occurs when φm < φs . Electrons then flow from the
metal to the 12 -cond. and cause a rise in the Fermi
level.
Ev
φm < φ s
φn
φm
φbE
χs
φs
F,m
Ec
EF,s
V0
φn
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Ev
EF
Fys 4310
metal
n-type 12 -cond.
Electrical Contacts - p. 11/16
metal
1
Ideal,
non-rectifying
n-type
-cond.
2
barrier
φm < φ s
Ec
χs
Occurs when φm < φs . Electrons
then flow from the
metal to the 12 -cond. andEF,m
cause a rise in the Fermi
EF,s
level.
Ec
Ev
φm < φ s
φn
φm
φbE
Ev
χs
φn
φs
F,m
V0
φn
Ev
Fys 4310
Ec
EF
Ec
EF,s
V0
EF
φb
metal
φn
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Ev
n-type 12 -cond.
Electrical Contacts - p. 11/16
Tunneling barrier
If the 12 -cond. is very highly doped, the depletion
region and the Schottky barrier will be very narrow
Sfrag replacements
φb
Ec
EF
Ev
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 12/16
Tunneling barrier
If the 12 -cond. is very highly doped, the depletion
region and the Schottky barrier will be very narrow
Sfrag replacements
φb
Ec
EF
Ev
eφb
J ∝ exp −
,
E∞
!
where
e}
E∞ =
2
Fys 4310
s
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Nd
εs m∗n
Electrical Contacts - p. 12/16
Specific contact resistance
The specific contact resistance, occasionally called
contact resistance per unit area, is defined by
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 13/16
Specific contact resistance
The specific contact resistance, occasionally called
contact resistance per unit area, is defined by
"
∂J
Rc =
∂V
Fys 4310
#−1
V=0
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 13/16
Specific contact resistance
The specific contact resistance, occasionally called
contact resistance per unit area, is defined by
"
∂J
Rc =
∂V
#−1
V=0
Specific contact resistance according to Jan:
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 13/16
Specific contact resistance
The specific contact resistance, occasionally called
contact resistance per unit area, is defined by
"
∂J
Rc =
∂V
#−1
V=0
Specific contact resistance according to Jan:
Warning! Will be wrong!
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 13/16
Specific contact resistance
The specific contact resistance, occasionally called
contact resistance per unit area, is defined by
"
∂J
Rc =
∂V
#−1
V=0
Specific contact resistance according to Jan:
Warning! Will be wrong!
Rc,Jan
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
R
=
A
Electrical Contacts - p. 13/16
Specific contact resistance (cont.)
A more successful approach is conductance per
unit area:
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 14/16
Specific contact resistance (cont.)
A more successful approach is conductance per
unit area:
Gc,Jan
Fys 4310
G
=
A
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 14/16
Specific contact resistance (cont.)
A more successful approach is conductance per
unit area:
Gc,Jan
Rc,Jan,new&improved
Fys 4310
G
=
A
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 14/16
Specific contact resistance (cont.)
A more successful approach is conductance per
unit area:
Gc,Jan
Rc,Jan,new&improved =
Fys 4310
G
=
A
1
Gc,Jan
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 14/16
Specific contact resistance (cont.)
A more successful approach is conductance per
unit area:
Gc,Jan
Rc,Jan,new&improved =
Fys 4310
G
=
A
1
Gc,Jan
A
=
G
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 14/16
Specific contact resistance (cont.)
A more successful approach is conductance per
unit area:
Gc,Jan
Rc,Jan,new&improved =
Fys 4310
G
=
A
1
Gc,Jan
A
= =R·A
G
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 14/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
■ 1 current source
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
■ 1 current source
■ 1 evaporation system
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
■ 1 current source
■ 1 evaporation system
■ 2 spare fuses for the evaporation system
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
■ 1 current source
■ 1 evaporation system
■ 2 spare fuses for the evaporation system
■ ∼ 1 × 103 fuses to replace the spare fuses for the
evaporation system
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
■ 1 current source
■ 1 evaporation system
■ 2 spare fuses for the evaporation system
■ ∼ 1 × 103 fuses to replace the spare fuses for the
evaporation system
■ 1 sputtering system
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
■ 1 current source
■ 1 evaporation system
■ 2 spare fuses for the evaporation system
■ ∼ 1 × 103 fuses to replace the spare fuses for the
evaporation system
■ 1 sputtering system
■ 1 ion implanter
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
■ 1 current source
■ 1 evaporation system
■ 2 spare fuses for the evaporation system
■ ∼ 1 × 103 fuses to replace the spare fuses for the
evaporation system
■ 1 sputtering system
■ 1 ion implanter
■ 7 engineers to fix the ion implanter
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
Accessories needed
To make a metal- 12 -cond. junction, make sure you
have at hand:
■ 1 ohmmeter
■ 1 current source
■ 1 evaporation system
■ 2 spare fuses for the evaporation system
■ ∼ 1 × 103 fuses to replace the spare fuses for the
evaporation system
■ 1 sputtering system
■ 1 ion implanter
■ 7 engineers to fix the ion implanter
■ 1 ion implanter that works to replace the one that
doesn’t
Fys 4310
Metal on 12 -cond.
Schottky
Forward bias
Reverse bias
IV (not 4)
Non-ideality
Image force
Surface states
Ohmic contacts
Non-rectifying
Tunneling
Rc
Rc cont.
Accessories
Electrical Contacts - p. 15/16
The End
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LATEX
HA-prosper
www.latex-project.org
prosper.sourceforge.net
Fys 4310
www.gnu.org
Electrical Contacts - p. 16/16