A Spin Field-Effect Transistor With an Electrical Control
R.N. Gurzhia , A.N. Kalinenkoa, A.I. Kopeliovicha , A.V. Yanovskya, E.N. Bogachekb, and Uzi Landmanb
a
B.Verkin Institute for Low Temperature Physics & Engineering, National Academy of Sciences of
Ukraine, 47 Lenin Ave, Kharkov, 61103, Ukraine
b
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332-0430, USA
Currently, some of the major issues concerning the utilization of spintronic devices center on the development of a spin field-effect transistor for control of an alternating spin signal. The most of discussed
schemes of a spin field-effect transistor governed by an electrical field exploits the idea of Datta and Das
of controllable spin manipulation using the Rashba spin-orbit effect.
Here we propose a scheme of a spin field-effect transistor device with an electrical control over spin flows
but with no direct affect on an electron spin. The device is based on the spatial separation of spin-up
and spin-down components of the electrical current and further Coulomb control over them in a special
hybrid magnetic-nonmagnetic structure, viz. ”spin guide”1 . This allows both to amplify and to generate
the a.c. spin-polarized signal by Coulomb switching of corresponding spin channels (unlike to the schemes
proposed early, that use a weak spin-orbit effect and do not allow to amplify an input spin signal). The
construction of such a device should be feasible with current materials and fabrication techniques.
1
R.N.Gurzhi, A.N.Kalinenko, A.I.Kopeliovich, A.V.Yanovsky, B.N.Bogachek, and Uzi Landman,
Phys. Rev. B 68, 125113 (2003)
Sorting category: Dd Conducting electrons in condensed matter
Keywords: spin, transistor, transport
LT1190