WAYNE A. BUCHANAN
Institute of Energy Conversion
University of Delaware
Newark, DE 19716-3820
Tel: (302) 831-6212
Fax: (302) 831-6226
E-mail: wab@udel.edu
EDUCATION
B.A.
Biology, University of Delaware 1977
Additional post-graduate courses in computer science, mathematics and sputter
deposition
EXPERIENCE
1983-present Research Associate I, Institute of Energy Conversion, University of Delaware,
Newark, Delaware 19716
Responsible for the deposition and optimization of a-Si and CdTe solar cells.
Designed, constructed, operated, and supervised the construction and operation of
complex semiconductor deposition systems. Direct and train technicians, postdocs and undergraduate students in the operation of these systems. Developed
processes for the deposition of high quality a-Si, CdTe and CdS films. Established
safety standards for the installation and handling of highly toxic and/or
pyrophoric gases associated with a-Si deposition systems. Have a working
knowledge of most equipment used at IEC.
1994 – 2004 Served as chair of the IEC Safety Committee
1978 – 1983 Senior Research Technician, Institute of Energy Conversion, University of
Delaware, Newark, DE 19716
WAYNE A. BUCHANAN
PUBLICATIONS
1. "Novel Photochemical Vapor Deposition Reactor for Amorphous Silicon Solar Cell
Deposition," Richard E. Rocheleau, Steven S. Hegedus, Wayne A. Buchanan, and Scott
C. Jackson, Appl. Phys. Lett. 51(2), 133 (1987).
2. "Performance and Analysis of Amorphous Silicon p-i-n Solar Cells Made by Chemicalvapor Deposition from Disilane," Steven S. Hegedus, R.E. Rocheleau, W. Buchanan, and
B.N. Baron, J. Appl. Phys. 61(1), 381 (1987).
3. "Effects of Impurities on Film Quality and Device Performance in a-Si:H Deposited by
Photo-Assisted CVD," Richard E. Rocheleau, Steven S. Hegedus, Wayne Buchanan, and
Robert Tullman, Proc. 19th IEEE PVSC, 699 (1987).
4. "Low Bandgap Amorphous Silicon-Germanium Alloys for Thin Film Solar Cells Using a
Novel Photo-CVD Reactor," Steven S. Hegedus, R.M. Tullman, H.S. Lin, J.M. Cebulka,
W.A. Buchanan, R. Dozier, and R.E. Rocheleau, Proc. 19th IEEE PVSC, 867 (1987).
5. "Photo-assisted CVD of a-Si:H Solar Cells and a-SiGe:H Films," S. S. Hegedus, R.E.
Rocheleau, R.M. Tullman, D.E. Albright, N. Saxena, W.A. Buchanan, K.E. Schubert, and
R. Dozier, Proc. 20th IEEE PVSC, 129 (1988).
6. "Fabrication of Monolithic a-Si:H - CuInSe2/CdS Tandem Solar Cells," B.E.
McCandless, R.W. Birkmire, W.A. Buchanan, J.E. Phillips, and R.E. Rocheleau, Proc.
20th IEEE PVSC, 381 (1988).
7. "Stable High Efficiency Amorphous Silicon Based Solar Cells," B.N. Baron, C.M.
Fortmann, S.S. Hegedus, W.A. Buchanan, D.E. Albright, N. Saxena, and T.W.F. Russell,
Proc. 9th Euro. Communities PV Solar Energy Conf., 56 (1989).
8. "Design Considerations for Low Band Gap a-SiGe:H Alloy Solar Cells," S.S. Hegedus,
C.M. Fortmann, and W.A. Buchanan, J. Non-Crystalline Solids 115, 21 (1989).
9. "Understanding Graded a-SiGe Solar Cells Using Bifacial Photocurrent Collection,"
Steven Hegedus and Wayne Buchanan, Proc. 23rd IEEE PVSC, 991 (1993).
10. "The Relationship Between Hydrogen Content, Weak Bond Density and SW Defects in
a-Si," C.M. Fortmann, T.X. Zhou, and W.A. Buchanan, Proc. 13th Int'l Conf. on
Amorphous and Liquid Semiconductors, 31 (1993).
11. "Lessons Learned from a Hydrogen Explosion at a Photovoltaic Research Facility," Paul
D. Moskowitz, Wayne Buchanan, and William Shafarman, Proc. IEEE First WCPEC
(24th IEEE PVSC), 504 (1994).
12. "Transparent Conducting Oxides (TCO's) for n-i-p and p-i-n Amorphous Silicon Solar
Cells," Steven S. Hegedus, Wayne A. Buchanan, Erten Eser, James E. Phillips, and
William N. Shafarman, AIP Conf. Proc. 353, 465 (1996).
13. "Effect of Textured Tin Oxide and Zinc Oxide Substrates on the Current Generation in
Amorphous Silicon Solar Cells," S. Hegedus, W. Buchanan, X. Liu, & R. Gordon, Proc.
25th IEEE PVSC, 1129 (1996).
14. “Improving Performance of Superstrate p-i-n a-Si Solar Cells by Optimization of
n/TCO/Metal Back Contacts,” Steven S. Hegedus, Wayne A. Buchanan, and Erten Eser,
Proc. 26th IEEE PVSC, 603 (1997).
15. “Preparation and Characterization of Micro-Crystalline Hydrogenated Silicon Carbide pLayers,” Erten Eser, Steven S. Hegedus, and Wayne A. Buchanan, AIP Conf. Proc. 462,
254 (1998).
16. “Thin Si p-layers Containing Boron Doped Micro-crystalline Si and a-SiOx Phases,” E.
Eser, W. Buchanan and S. Hegedus, Proc. NCPV Prog. Rev. Mtg., 183 (2001).
17. “Vapor Transport Deposition of Cadmium Telluride Films,” Brian E. McCandless,
Robert W. Birkmire, Wayne A. Buchanan, Shannon Fields, Gregory M. Hanket, Proc.
29th IEEE PVSC, 547 (2002).
18. “High Throughput Processing of CdTe/CdS Solar Cells,” Brian E. McCandless, Wayne
A. Buchanan and Robert W. Birkmire, Proc. 31st IEEE PVSC, 295 (2005).
19. “Thin CdTe Solar Cells with High Throughput Processing,” B.E. McCandless, K.D.
Dobson, S.S. Hegedus, W.A. Buchanan, D. Desai, R.W. Birkmire, presented at the Solar
Program Review Meeting, (2005).
20. “Thin Film Cadmium Zinc Telluride Solar Cells,” Brian E. McCandless, Wayne A.
Buchanan and Gregory M. Hanket, Proc. 32nd IEEE PVSC and WCPEC-4, 483 (2006).
21. “Design of a Vapor Transport Deposition Process for Thin Film Materials,” G.M.
Hanket, B.E. McCandless, W.A. Buchanan, S. Fields and R.W. Birkmire, J. Vac. Sci.
Technol. A24(5), 1695 (2006).