Sensors
Frank Hartmann for the Sensor WG
28.04.2010 CMS Upgrade Days
• HPK submission (main current topic)
• Possible next submission
• 3D sensors for innermost layers
• Sintef (sensors under test)
• CNM (sensors under design)
HPK Submission
substrate type
& Active Thickness
FZ 200um
carrier
MCZ
200um
thinning
P-on-N Production
6
6
6
6
6
6
36
N-on-P Production p-spray
6
6
6
6
6
6
36
N-on-P Production p-stop
6
6
6
6
6
6
36
2'nd metal production P-on-N
6
6
2'nd metal production N-on-P p-stop
6
6
2'nd metal production N-on-P p-spray
6
6
Total
36
18
Many different
• technologies
• thicknesses
• geometries
• structures with different measureables
FZ 100um epi 100um epi 75um FZ 300um
carrier
18
18
18
18
 Choice of technology
Total
126
Cutting  Work Packages so far
•
•
•
•
•
•
•
•
•
Pixel
Multi-geometry strips
Multi-geometry pixel
Baby_std
Baby_PA
Baby_Strixel
Diodes
Test-structures
Add_Baby aka Lorentz angle sensor
– Lorentz Angle measurement
– Neutron and proton irradiation
cross calibration
Diodes to be cut further (backup slides)
~ 30 pieces per wafer  3800 pieces
All cut pieces come in
an individual envelope
Tentative Schedule
• Initial Test and Campaign description September 2009
• We started ~monthly meetings in January
– More iterations of test descriptions
– Next one: 04.05.2010
• Final design approved by CMS: 02.02.2010
• Double Metal design delivered to HPK:26.03.2010
• Start Delivery to CERN: End of June
– End Delivery: ~Mid-End August??? (my guess)
•
•
•
•
•
Ship sensors to institutes: Beginning of July
First full pre-irradiation measurement: August-September
First Irradiation: End of September
…
End of Campaign: End of 2011 = 1.5 y of campaign
Not all institutes are ready yet!
All measurement data will be handled by the Lyon database (former construction DB)
Commitments, so far
Multi
strip
baby_std
multi
pixel strixel PA
help appreciated
PSI
Purdue
CERN
Karlsruhe
Vienna
HH
Perugia
Louvain
FNAL
Firenze
Rochester
Zeuthen
Bari
Brown
Santander
Aachen
Padova
Helsinki
Lyon
20%
50-100% annealing
(100% strip)
100%
80%
TS
80% 100%
pixel
100%
50%
50%
Lorentz
angle Diodes SIMS
help
100% needed
100%
TB
comments
not
80% for strixel and PA seems more
defined logistics
or less ok
xxx%???
30% 30% crossC
crossC crossC 100%
annealing study?
100%
interested
DB
10%
xxx%
xxx~30%
p-cross calib with LA-sensors????
n-irrad cross calib with LA sensors!
50+% 50+%
50%
50%
% strip
testing
xxx~30%
interested
also strip measurement on PS,
together with CENR
to do
see today
DB
Calibration
Radiation
Tests; examples only
THE CAMPAIGN
Calibration campaign
non-irradiated structure
Institute
IV / CV
stripmeasurements
TS
Vienna
successful
successful
successful
Louvain
successful
strange Rpoly
x
Hamburg
successful
successful
successful
DESY Zeuthen
successful
successful
successful
Bari
successful
successful
x
Rochester
successful
missing Cint, Rint, Pinhole; bad Ileak
x
Fiorentino
successful
successful
successful
CERN
successful
successful
some missing structures
Karlsruhe
successful
successful
successful
Santander
successful
Missing Ileak, Pinhole
successful
Fermilab
successful
x
successful
irradiated structure
Calibration campaign
Structure
received
IV / CV
Strips, ramps
TS
Vienna
X
successful
successful
successful
Louvain
X
x
x
x
Hamburg
X
successful
successful
x
x
x
x
x
x
x
Rochester
x
x
x
Fiorentino
x
x
x
Institute
DESY Zeuthen
Bari
X
CERN
X
x
x
x
Karlsruhe
X
successful
successful
successful
Santander
x
x
x
Fermilab
x
x
x
Mixed irradiations I
 Mixed radiations with full
annealing evaluation
-1
L = 3000fb
1E17
Fluence in cm
 Some intermediate
proton/neutron only results
 Full material info from diodes
Ch. Hadr.
Neutrons
Total
-2
 Neutron fluence a bit adapted
1E16
1E15
1E14
0
10
20
30
40
Radial position in cm (at z=0cm)
Small subset
Proton
dominated
Neutron
dominated
50
60
Mixed radiations II
2 diodes out for full
long term annealing
Initial
measurements
To investigate the pure particle (p&n) dependence
p-irrad (KA)
p-irrad (KA)
(e.g. 15x1014)
Wafer with both
p- & n- irradiation
(e.g. 15x1014)
Short annealing
- measuring
Short annealing
- measuring
n-irrad (Ljubljana)
(e.g.
6x1014)
n-irrad (Ljubljana)
(e.g. 6x1014)
Full measurement:
To investigate the mixed (p+n) (real) dependence
Test beam (some)
Long term annealing (many steps, many measurments
• p- & n- fluences defined by expectation for the different radii (with some adaptations)
e.g. 15p+6n equals to situation @ R=15cm
• To save money and be efficient, not the real full half moon will be irradiated.
• This we will do with 4-5 wafers leaving 1-2 virgins
E.g. Multi-geometry strips, electrical
Biasing circuit
12 resistors
clamps
Pitch adaptor
Multi-geomtry strips goes here
Goes to
irradiation
bonds
solder
12×2 cables
To the
instruments
Goes to Vienna Box
31 strips in each group bonded together
for Cinterstrip and Rinsterstrip measurements
IV/CV
Measure:
• Before irradiation
• After first irradiation
• After second (mixed) irradiation
• (possibly additional annealing study)
E.g. Multi-geometry strips S/N & resolution
Similar plans for the multi-geometry try long pixels
Biasing circuit
12 resistors
clamps
Pitch adaptor
Multi-geomtry strips goes here
Goes to
irradiation
bonds
solder
12×2 cables
This part can be exchanged with a CMS hybrid:
Signal to Noise, & Resolution
Goes to CRACK or x,y-table
(cosmic, source)
Multi-geometry:
http://indico.cern.ch/materialDisplay.py?contribId=1&mat
erialId=slides&confId=77900
E.g.: Lorentz Angle Measurement
• Add_baby: Sensor with 64 strips, 60um pitch
• Measure displacement for different fields
(up to 10 T), temperatures, voltages
B
4,95cm
TOP-6APV
1.25cm
1cm
5-6 sensors from same technology irradiated
to different fluences on one hybrid
Lorentzangle:
http://indico.cern.ch/conferenceDisplay.py?confId=77903
E.g.: Standard Baby
Sensor behavior with fluence and annealing
Probe station
1.
2.
3.
4.
5.
6.
Complete strip measurement
CCE (128 strips bonded)
Ramps on 5-10 strips after first irradiation
CCE (128 strips bonded) after first irradiation
Ramps on 5-10 strips after second irradiation
CCE (128 strips bonded) after second irradiation
ALIBAVA
After second irradiation: Sensor bonded to ALIBAVA
Measurement (S/N & IV/CV for several voltages, several temperatures with source and/or laser)
Annealing
All steps fully automated
Measurement
in the one setup
Annealing
Measurement
Baby_std:
http://indico.cern.ch/materialDisplay.py?contribId=34&sess
Etc.
ionId=1&materialId=slides&confId=80949
Etc.
Measurement
Descriptions & Definitions
• Combination of
–
–
–
–
–
–
–
Initial talk at FNAL: http://indico.cern.ch/sessionDisplay.py?sessionId=7&slotId=0&confId=67916#2009-10-29
Diodes: http://indico.cern.ch/materialDisplay.py?contribId=2&materialId=slides&confId=77900 & today
Multi-geometry: http://indico.cern.ch/materialDisplay.py?contribId=1&materialId=slides&confId=77900
Baby_std: http://indico.cern.ch/materialDisplay.py?contribId=34&sessionId=1&materialId=slides&confId=80949
Baby_PA & _strixel: http://indico.cern.ch/materialDisplay.py?contribId=7&materialId=slides&confId=77900
Lorentz angle: http://indico.cern.ch/conferenceDisplay.py?confId=77903
TS: to be defined by Vienna (TUPO 04.04.2010)
• Irradiation: http://indico.cern.ch/materialDisplay.py?contribId=34&sessionId=1&materialId=slides&confId=80949 &
http://indico.cern.ch/materialDisplay.py?contribId=3&sessionId=3&materialId=slides&confId=76114
• I have to do more homework and combine this to one central
document!
Mind, ALL structures ask for a multitude of measurements,
e.g. : diodes are simple, their measurements are not (CCE,TCT,CV,IV)!
Next Submission
• No realistic planning yet:
– Input from current HPK submission needed
• Reduce to one (max two) technology
– Maybe 2011/2012
– Structure closer to “final” design, e.g.:
• 10 cm long structure with
– 2*5 cm long strips,
– 4*2.5 cm long strips
– pt module geometry (2.5 mm long pixels)
– Structures to evaluate DC coupling (AC coupling)
–…
3D Pixel sensors @ Sintef
n+ (readout)
2E Configuration
bias wire
p+ (bias)
Cooling
tubes
sensor
4E Configuration
Four 3D sensors mounted on
plaquettes for testbeam:
2E_WB5_2
4E_WB5_8
4E_WB2-16_5
2E_WB2-16_2
:
:
:
:
2E configuration,
4E configuration,
4E configuration,
2E configuration,
280µm substrate thickness
280µm substrate thickness
200µm substrate thickness
200µm substrate thickness
Results (3D Sintef): readout CAPTAIN
Threshold [DAC] = 50
* 1 Vcal [DAC] = 65.5 electrons
Lot of studies done in a short time
Detector data still requires further studies
Looks promising
NEW!
3D Pixel Sensors @ CMN
• CNM will design the mask of the pixels; the mask will include one large
module with a matrix of 8x2 detectors (PSI46 footprint) and various single
chip detectors. Different test structures will be added such as DC 3D strips,
3D pads, polysilicon resistors etc.
• A total of 8 wafers will be fabricated
– the cost will be paid by the GICSERV access.
– The cost of the masks will be paid by PSI
– CNM will process the wafers and will deposit the UBM (Ti/Ni/Au) and then ship
the wafers to PSI for Indium deposition, dicing and flip chip.
• Ivan also commented that CNM and IFCA applied for national funding to
collaborate in the development of 3D pixels detectors for CMS.
DDTC
Two different geometries for the back ohmic
holes will be implemented in the design
Tentative Timetable
Task
Due date
Mask design
May 2010
Fabrication run
November 2010
First testing at CNM
December 2010
Indium deposition
January 2011
dicing
February 2011
Flip chip
March 2011
Testing 1
May 2011
irradiation
September 2011
Testing 2
December 2011
BACKUP
Diode Cutting
2*2 diodes IN TS
 8 individual diode_new
 4 individual HPK diode
Reminder Backside aluminisation to
allow backside illumination
• To allow Lorentz angle, CCE and TCT measurements
• Problem: most sensors come on carrier substrate
– Usage of red laser form back not possible
3D mature yet?
Introduced by: S.I. Parker et
al., NIMA 395 (1997) 328
“3D” electrodes: - narrow columns along detector thickness
- diameter: 10mm, distance: 50 - 100mm
Lateral
 lower depletion voltage
depletion:  thicker detectors possible
 fast signal
 smaller trapping probability
radiation hard to several 1015-1016p/cm2
 higher capacitances
Edgeless:
-Edge can be an active trench 
oxide
polysilicon
Phosphorus
diff.
STC
DDTC
DRIE Deep Reactive Ion Etching
Short collection path/time = almost no trapping; charge of the complete volume is collected
1. 3D single column type (STC)
• suffer from a low field region between columns
Very soft “corner”
2. 3D double-sided double type columns
(DDTC)
• more complicated
Quintessence: excellent progress
but still some miles to go!
• full field