PRINCIPLES OF ELECTRICAL ENGINEERING II
ENGI 242 SYLLABUS
Revised 6 January 2003
Professor Andrew H. Andersen, Jr.
ENGI 242 SYLLABUS
COURSE DESCRIPTION
This course is an introduction to solid state electronic circuits. These devices have permeated all
types of devices used in modern living, from entertainment to industrial controls. The student
will study basic semiconductor devices including the pn junction, junction diodes, bipolar
transistors, field effect transistors, insulated gate field effect transistors, and circuits composed of
both discrete and integrated circuits. S/he will apply the basic principles of operation for these
devices, calculate the operating parameters for these devices by hand and using the characteristic
family of curves for various circuit configurations. The student will analyze the different
operational modes of the BJT and FET using the various transistor models. Electronic circuits
will be analyzed and designed in the linear and nonlinear operating regions. Important
considerations will be given to design circuits with a stable operating point and consider the
effects of temperature for various circuit configurations. The various transistor AC models will
be used in the analysis and design of amplifiers to meet specifications for gain, frequency
response, and temperature effects for various circuit configurations.
The course consists of four hours per week of lecture and computer laboratory simulations. Upon
successful completion of this course, the student will earn four credits.
PREREQUISITES
You must have a C or better in ENGI 241
REQUIRED TEXT
ELECTRONICS, Second Edition, by Allan R. Hambley, Prentice Hall, 2000, ISBN 0-13691982-0
CORE COMPETENCIES
This course teaches no primary cores competencies.
PARTICIPATION
Active participation in this course by all students is required and expected. Attendance for all
lectures is strongly advised. All computer laboratory experiments must be performed according
to schedule and submitted within two weeks for grading.
STUDENT PERFORMANCE EVALUATION
Active participation in this course by all students is required and expected. Attendance for all
lectures is strongly advised.
1.
Students must submit their assignments for grading no later than two weeks after they are
scheduled to be performed. Late work may be penalized at the rate of 10% per week late.
2.
The progress of the student will be evaluated by class participation, graded assignments,
performance, and test grades.
3.
There will be quizzes, a midterm, and a final exam. There is no retest or makeup
examination except for absence.
4.
In order to pass the course, the student must have a passing test average, and a passing
grade for the course project.
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ENGI 242 SYLLABUS
If you have a documented disability and would like to request an accommodation and/or
academic adjustment, contact the Disability Services Office at (732) 224 2730 or TTY (732) 842
4211.
FINAL GRADE
The final grade will be determined by averaging each section and assigning them the following
weights:
25%
for the Midterm Examination
25%
for the Final Examination
25%
for Quizzes
20%
for the Course Project and Computer Simulations (labs)
5%
for Homework
100%
Grade for the Course
The following scale will be used to determine satisfactory progress on each Unit examination and
for the final grade:
Final Grade
Range
A
90% to 100%
B
80% to 89%
C
70% to 79%
D
65% to 69%
F
Below 65%
It is the student's responsibility to submit all work on a timely basis, and it is expected that all
course requirements will be completed by the last class meeting. It may be possible to obtain a
grade of INC. However, this option is discouraged except in cases of severe hardship.
COURSE PROJECT
Each student will be required to perform a course design project consisting a PSpice simulation
of a circuit. Project requirements and the circuits will be distributed by the instructor. You may
obtain copy of the Student Edition of PSpice from your instructor or one of the engineering
faculty.
ACADEMIC INTEGRITY
Academic integrity is submitting one's own work, and properly acknowledging the work of
others. Any violation of this principle constitutes academic dishonesty. Students that participate
in dishonest activities
 will receive a 0 for that project, examination, or assignment
 may be given a grade of F for the course
 may be reported to the Dean for disciplinary action
Forms of academic dishonesty include:
Plagiarism
Submitting another's work, in whole or part, as one's own. This includes an examination, a
computer program, a laboratory report, or a written assignment.
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ENGI 242 SYLLABUS
Facilitating Academic Dishonesty
Helping another commit an act of dishonesty, such as substituting for an examination or
completing an assignment for someone else.
Cheating
Using or attempting to use unauthorized materials on an examination or assignment, such as
using unauthorized texts or notes or improperly obtaining, or attempting to obtain, copies of
an examination or answers to an examination.
Illegal System Access
Altering, transmitting, or permitting unauthorized individuals access to your account, or an
attempt to alter or destroy system files on any server or computer. This also includes altering,
transmitting, or attempting to alter or transmit academic information or records by
unauthorized individuals.
For additional information, refer to the current Brookdale Community College Student
Handbook.
COURSE SCHEDULE
Unit
Week
Subject
1
1
Diode Characteristics
2
2
BJT circuit configurations
2
3
Analyze simple linear dc BJT circuits
3
4
FET circuit configurations
3
5
Analyze simple linear dc FET circuits
4
6
Small-Signal Equivalent BJT Circuits
4
7
Small-Signal Equivalent BJT Circuits
4
8
Small-Signal Equivalent FET Circuits
5
9
Bode Plots
5
10
Transistor modeling
5
11
Frequency Response at high and low frequencies
6
12
Op Amp circuits
6
13
Op Amp configurations
6
14
Op Amp Filters
6
15
Final Exam
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ENGI 242 UNIT 1
Name Of Unit
Unit Objective
Method Of Evaluation
Estimated Time To Achieve
UNIT 1 OF 6
Diode Characteristics
At the conclusion of this Unit, the student will describe the
electrical properties of semiconductor crystals. The student
will describe the operating characteristics of the pn junction
diode and how its operation is effected by the properties of
semiconductor materials. The diode V  I curves and the
diode circuit models will be used in the analysis and design
diode circuits.
Class participation and the grading of a written examination
and the homework assignments.
1 Week
Learning Objectives
At the conclusion of this Unit, the student will be able to describe or perform:
1.
Load-Line Analysis
2.
The Ideal-Diode Model. Rectifier Circuits
3.
Wave-Shaping Circuits
4.
Linear Small-Signal Equivalent Circuits
5.
Basic Semiconductor Concepts
6.
the physics of the Junction Diode
7.
Switching and High-Frequency Behavior
8.
Computer-Aided Analysis of Diode Circuits.
Recommended Learning Experiences
Class and participate in the lecture.
Attend
The course text Chapter 3.
Read
Turn In
Homework 1  Chapter 3 problems 2, 4, 5, 9, 13, 14, 15, 16
Perform PSpice Computer Lab 1 – Chapter 3 problems 92 and 93
PSpice Computer Labs
Problem 92,
 For the Diode, use the library component D1N4002. Use the Default Parameters.
 Select Transient and enter the appropriate parameters for the General Settings.
 The Run to time should be an integer value that is 5T where T = 1/60 s and make the
Maximum step size small for smooth output.
Problem 93
Use only a VDC source and the Diode D1N4148. For the Diode, modify the model for the
following values
.model D1N4148 D(Is=.1p N=1.836 Rs=20 Ikf=44.17m Xti=3 Eg=1.11 Cjo=2p
+
M=.3333 Vj=.5 Fc=.5 Isr=1.565n Nr=2 Bv=100 Ibv=1p Tt=10n)
Perform a DC Sweep with the following options:
Primary Sweep Voltage V1 0 1 1mv
Secondary Sweep Temperature 0 50 100
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ENGI 242
UNIT 2
Name Of Unit
Unit Objective
Method Of Evaluation
Estimated Time To Achieve
UNIT 2 OF 6
Bipolar Junction Transistors
At the conclusion of this Unit, the student will describe the basic
structure and types of the bipolar junction transistors (BJT's) as
a semiconductor device. The student will describe the operation
of these devices based upon its input and output characteristic
curves. S/he will use various transistor models to analyze the
different operating parameters and configurations.
Class participation and the grading of a written examination and
the homework assignments.
2 Weeks
Learning Objectives
At the conclusion of this Unit, the student will be able to:
1.
describe the structure of the bipolar junction transistor and the two types of devices  the
pnp and npn.
2.
draw the schematic diagram for transistor circuits with proper biasing voltages.
3.
describe the operation of the transistor in terms of its V I characteristic curves.
4.
identify the regions of operation from the terminal electrical parameters.
5.
apply the dc circuit models to the different configurations, and calculate the terminal
voltages and currents.
6.
write the various basic model equations.
7.
describe the basic operation of the npn Bipolar Junction Transistor
8.
perform Load-Line Analysis of a Common-Emitter Amplifier
9.
design and analyze simple linear dc BJT circuits.
Recommended Learning Experiences
Attend
Read
Turn In
Perform
Class and participate in the lecture.
The text Chapter 4.1 – 4.6
Homework 2  Chapter 4 problems 7, 10, 19, 20, 21, 22
PSpice Computer Lab 2 – Chapter 4 problem 17 and 18
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ENGI 242
UNIT 3
Name Of Unit
Unit Objective
Method Of Evaluation
Estimated Time To Achieve
Learning Objectives
UNIT 3 OF 6
Field Effect Transistors
At the conclusion of this Unit, the student will describe the
basic structure of unipolar transistors, the Junction Field Effect
Transistor (JFET), and the Insulated Gate Field Effect
Transistor (IGFET). The student will describe the operation of
these devices based upon its input and output characteristic
curves. S/he will use various transistor models to analyze the
different operating parameters and configurations.
Class participation and the grading of a written examination and
the homework assignments.
2 Weeks
At the conclusion of this Unit, the student will be able to:
1.
describe the structure of the MetalOxideSemiconductor Field Effect Transistor
(MOSFET) junction.
2.
describe the operation of the MOSFET in the depletion, inversion, and accumulation
modes.
3.
describe the operation of the MOSFET junction as a gate.
4.
describe the structure of the JFET and IGFET, and the operating characteristics of ntype
and ptype devices.
5.
identify the terminal names for these devices  the gate, source, and drain.
6.
properly connect voltage sources to the device.
7.
draw the schematic diagram for transistor circuits with proper biasing voltages.
8.
describe the operating regions (ohmic, pinchoff, threshold, drain current, and saturation
current) for the JFET and IGFET.
9.
describe the structure and operating characteristics of the IGFET in the depletion and
enhancement mode.
10. apply both linear and nonlinear dc circuit models to analyze the operation of the FET in
the depletion mode and enhancement mode.
11. design and analyze linear and nonlinear FET circuits using both ideal transistors and
simple FET models.
Recommended Learning Experiences
Attend
Read
Turn In
Perform
Class and participate in the lecture.
The course text Chapter 5.1 to 5.3.
Homework 3  Chapter 5 problems 8, 15, 16, 17, 18, 21, 22, 24, 25
PSpice Computer Lab 3 – Chapter 5 problem 24, 34A
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ENGI 242
UNIT 5
Name Of Unit
Unit Objective
Method Of Evaluation
Estimated Time To Achieve
UNIT 4 OF 6
Designing Circuits for a Stable Operating Point.
At the conclusion of this Unit, the student will describe the
various transistor dc models. The student will use the dc model
of the transistor to design practical transistor circuits.
Class participation and the grading of a written examination
and the homework assignments.
3 Weeks
Learning Objectives
At the conclusion of this Unit, the student will be able to describe the behavior and design:
1.
Small-Signal Equivalent BJT Circuits
2.
The Common-Emitter Amplifier
3.
The Emitter-Follower
4.
The BJT as a Digital Logic Switch
5.
Small-Signal Equivalent FET Circuits
6.
Common-Source Amplifier
7.
Source Follower. JFETS
8.
Depletion-Mode MOSFETs
Recommended Learning Experiences
Class and participate in the lecture.
Attend
The course text Chapter 4.6 -4.9 Chapter 5.4 – 5.7, and page 343 - 348
Read
Turn In
Homework 4  Chapter 4 problems 41, 42, 44, 45, 48
Homework 5  Chapter 5 problems 28, 33, 34, 38, 39, 41, 45, 26, 57, 66
PSpice Computer Lab – Chapter 4 problem
Perform
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ENGI 242
UNIT 7
Name Of Unit
Unit Objective
Method Of Evaluation
Estimated Time To Achieve
UNIT 5 OF 6
Single Stage Amplifiers at Midband Frequencies
At the conclusion of this Unit, the student will analyze and
design single stage amplifiers. The student will calculate and
meet design criteria for voltage, current and power gain, as
well as input and output impedance.
Class participation and the grading of a written examination
and the homework assignments.
3 Weeks
Learning Objectives
At the conclusion of this Unit, the student will be able to:
1.
draw Bode Plots. Common-Source Amplifiers at High Frequencies
2.
design BJT circuits with stable operating points.
3.
use the three basic assumptions in the preliminary design.
4.
describe the use of negative feedback and the effect of feedback on the circuit's operating
parameters.
5.
perform objectives 1 through 4 for the JFET and IFGFET in both the depletion and
enhancement modes of operation.
6.
identify and design the dc bias circuits for BJT amplifiers in the three configurations  the
Common Emitter, the Common Collector, and the Common Base.
7.
draw the hybrid  low frequency model for various transistor amplifier configurations.
8.
calculate the hybrid  transistor parameters, r , gm, rb, and ro.
9.
draw the hybrid  high frequency model for various transistor amplifier configurations.
10. calculate the hybrid  transistor parameters, c and c.
11. identify and design the dc bias circuits for FET amplifiers in the three configurations 
the Common Source, the Common Drain, and the Common Gate.
12. perform analysis for the Low-Frequency Response of RC-Coupled Amplifiers.
13. calculate CinMiller, and CoMILLER.
14. calculate the upper and lower 3dB points.
15. calculate the amplifier input and output impedance
.
RECOMMENDED LEARNING EXPERIENCES
ATTEND
READ
TURN IN
Perform
Class and participate in the lecture.
Chapter 8.
Homework 6  chapter 8 problems 22, 24, 28, 30, 39, 40, 42, 43, 61, 64, 65
PSpice Computer Lab – Chapter 6 problem
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ENGI 242
UNIT 7
Name Of Unit
Unit Objective
Method Of Evaluation
Estimated Time To Achieve
UNIT 6 OF 6
Operational Amplifiers
At the conclusion of this Unit, the student will design IC
circuit amplifiers.
Class participation, and the grading of a written examination
and the homework assignments.
3 Weeks
Learning Objectives
At the conclusion of this Unit, the student will be able to describe the operation and design
opamp circuits:
1.
The Ideal Operational Amplifier
2.
The Summing-Point Constraint
3.
The Inverting Amplifier
4.
The Noninverting Amplifier
5.
Design of Simple Amplifiers
6.
Op-Amp Imperfections in the Linear Range of Operation
7.
Large-Signal Operation
8.
DC Imperfections. Computer-Aided Analysis of Op-Amp Circuits
9.
A Collection of Amplifier Circuits. Integrators and Differentiators
Recommended Learning Experiences
Attend
Read
Turn In
Class and participate in the lecture.
The course text Chapter 2.
Homework 7  chapter 2 problems 10, 12, 13, 22, 24, 25, 28, 34, 35, 37, 44,
45
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