Optimization of a Multi-Target Voltages Switched Capacitor Converter

advertisement
Optimization of a Multi-Target Voltages
Switched Capacitor Converter
Natan Krihely, Sam Ben-Yaakov, and Alexander Fish
Department of Electrical and Computer Engineering
Ben-Gurion University of the Negev
P.0.Box 653, Beer-Sheva 84105, ISRAEL
krikali@ee.bgu.ac.il, sby@ee.bgu.ac.il, afish@ee.bgu.ac.il
Abstract—In this paper, an efficient voltage scalable switched
capacitor converter (SCC) for 1.1V battery-powered system is
presented. The SCC employs a binary resolution technique to
step-down the input voltage to a range of voltages, while keeping
the efficiency high. An optimization strategy for designing multitopology SCC is presented to improve the effectiveness of the
circuit and to preserve efficiency over large load voltages.
I.
INTRODUCTION
The growing quest for power saving techniques in digital
systems has raised the need for an integrated DC-DC
converter which is compatible with sub-threshold operation
levels [1]. To minimize power dissipation in ultra low power
systems, the DC-DC converter needs to supply variable subthreshold load voltages [2]. The most efficient technique for
step-down conversion is based on the Buck converter.
However, the employment of an off-chip inductor for each
voltage domain causes serious EMI noise and a large pin
requirement, which makes such implementation impractical
in many applications. Switched capacitor converters (SCC)
have become more attractive for battery operated systems
because they can minimize the number of off-chip
components and have flexibility in sizing switches and
capacitors [3], [4]. The challenge associated with the
realization of an efficient low voltage and ultra low power
SCC has led to several recent developments [5]-[7]. These
studies have shown that the efficiency of multiple conversion
ratios SCC can be maintained effective over wider input
voltage range than that of a single topology converter. It is
shown that a combination of two standard divide by two SCC
cells can support two additional topologies, which provide
2/3 and 1/3 conversion ratios [8]. This circuit and its variants
were systematically designed in numerous works, utilizing
one or more of its possible conversion ratios. For example, an
interleaved SCC structure partitioned into multiple circuits to
reduce the input current and output voltage ripples has been
explored in [8].
The most common loss mechanisms of an integrated SCC
are:
1) Charge transfer conduction losses,
2) Switching losses,
978-1-4673-1653-8/12/$31.00 '2012 IEEE
Fig. 1.
Conventional 9 switch SCC with three conversion ratios
G={1/3,1/2,2/3}.
3)
4)
5)
6)
Bottom-plate parasitic capacitors,
Output voltage ripple,
Switch parasitic losses,
Gate drive loss.
In light of these, it is clear that the main challenge in SCC
design is the optimization [9] of the converter parameters,
while meeting various constraints on efficiency, silicon area
and output voltage VDD. If, for instance, a traditional design
approach is adopted, such as sizing the switches of the SCC
to the same Rds(on) or, alternatively, adjusting it to allow
operation in the complete charge transfer mode, one might
end up with a non-optimal design.
Motivated by the above concerns, this work presents an
optimization procedure of a 40nm 1.1V CMOS voltage
scalable SCC, which is suitable for mobile sub-threshold
applications supporting output levels of 0.18V-0.6V. It
should be noted that the presented concept is general and not
depends on particular implementation technology. The core
of the proposed circuit is a classical SCC shown in Fig. 1.
This circuit is composed of nine switches and two flying
capacitors to support three conversion ratios (this topology
denoted henceforth as conventional SCC). Typical candidates
for this SCC are applications require ultra-low dissipation
759
η=
Fig. 2. Proposed 10 switch SCC with four conversion ratios
G={1/4,1/3,1/2,2/3}. With gain setting of G=1/4, the switches M2, M3, M6
are in off state, while the remaining switches are clocked by a 3 phase timing
template {Ф1,Ф2,Ф3}.
PL
PL η max + PBP + PDrive + PLeak + PControl
(2)
where PL, PBP, PDrive, PLeak, PControl are respectively the output
power, the bottom-plate parasitic capacitor related losses, the
gate drive loss, the power consumption due to leakage current
and the power lost in the control circuitry.
In practice, employing the circuit of Fig. 1 to produce an
ultra low VDD voltage such as 0.2V from 1.1V battery is
possible but the resulting efficiency will be very poor. For
example, using the smallest possible ratio of G=1/3, it follows
from (1) that for VDD=0.2V, the obtainable efficiency is
limited to 54%. It would appear that a conversion ratio of
G=1/4 can be realized by cascading two divide by two SCC
in order to increase the efficiency up to 73%. However, this
requires an additional number of power switches that need to
be considered.
A. The Approach
with low to moderate circuit performance. To enhance the
efficiency of this SCC in the vicinity of VDD=0.2V a single
extra power switch was introduced (Fig. 2) as compared to
the topology of the conventional SCC (Fig. 1). Hence, a total
of only 10 power switches are able to support four topologies
with conversion ratios of 2/3, 1/2, 1/3 and 1/4. The proposed
G=1/4 topology employs the technique of binary SCC [5].
Since the proposed SCC is supposed to work over four
different topologies, it is hard to define a single optimized
operating point that can constitute an optimization criterion
for all topologies. As far as author’s knowledge this subject
has received limited attention over the years. Therefore, this
paper outlines an optimization methodology of a multiobjective optimization approach.
II.
The configuration of the proposed power stage converter is
depicted in Fig. 2. This circuit consists of a conventional SCC
(Fig. 1) and an additional switch M10. The SCC is designed to
implement 4 different conversion ratios, excluding the trivial
case G=1. The reader is referred to [6] and [8] for a detailed
analysis of the ordinary conversion ratios and their
corresponding topologies. When the circuit is supposed to
operate with G=1/4, essentially it consists of three subcircuits extended over three non-overlapping time sessions
{Ф1,Ф2,Ф3}. Following the theory in [5], the sub-circuits of
the SCC can be represented by an equivalent system of linear
equations. Designating the voltages across Cf1 and Cf2 by VC1
and VC2, the system of linear equations is composed as
follows,
PROPOSED SWITCHED CAPACITOR CONVERTER
⎛1 0 −1⎞ ⎛ VDD ⎞ ⎛ 0 ⎞
⎟ ⎜
⎜
⎟ ⎜
⎟
⎜1 1 1 ⎟ ⋅ ⎜ VC1 ⎟ = ⎜ VBAT ⎟
⎜ 1 −1 1 ⎟ ⎜ V ⎟ ⎜ 0 ⎟
⎝
⎠ ⎝ C2 ⎠ ⎝
⎠
It is well established that any SCC can be modeled with an
equivalent no-load voltage source connected in a series with
an equivalent resistor Req [10], [11]. Loss contributors in SCC
power stage are collected into that equivalent resistor. The
maximum theoretical efficiency of the SCC for a given
conversion ratio G can be expressed by,
ηmax =
VDD
RL
=
G ⋅ VBAT R L + R eq
(3)
The solution of (3) is: VDD=(1/4)VBAT, VC1=(1/2)VBAT and
VC2=(1/4)VBAT. These results determine that, in a steady state
irrespective of the order in which the three sub-circuits repeat
(Fig. 2), the voltages VDD, VC1 and VC2 eventually converge
(1) to the above calculated values.
B. Architecture
where VDD and VBAT are the loaded output and input battery
voltages, respectively and RL is the load resistance. Equation
(1) however, does not take into account the power losses that
stem from leakages, the bottom plate capacitor, the gate drive
and the control circuitry. A more accurate representation of
(1) will be with all loss contributors as follows,
The block diagram architecture of the considered SCC is
shown in Fig. 3. Apart from the SCC circuit, all control
blocks were implemented with the Verilog-A language (See
Appendix). The SCC block contains the flying capacitors
(Cf1, Cf2) and the power switches, as shown in Fig. 2. Eight
clock waveforms are generated inside the non-overlapping
760
Fig. 3. Block diagram of the Hysteretic mode control regulated SCC.
(a)
(b)
Fig. 4. Clock waveforms of topologies: (a) G={1/3,1/2,2/3}and (b) G=1/4.
clock generation block (Fig. 3). Fig. 4 illustrates the clock
waveforms which are involved in the operation of the
converter. The gain selection block activates one of the four
topologies, depending on the proximity of its target voltage to
the load voltage being delivered and its ability to provide the
load power demand. To facilitate a tight regulation and
achieve high efficiency, the converter should employ a
feedback controller. A typical hysteretic mode control (burst
mode) is used, although other techniques such as PFM are
also feasible. The converter uses the hysteretic mode control
to maintain the feedback voltage VDD within the hysteretic
band of ±ΔV, where ΔV is set to 10mV. In this method, the
converter remains idle until the output voltage falls below
VREF-ΔV. At this point, the output of the comparator Vcomp
switches to a high state and thereby enables the SCC to
transfer charge packets to the load.
III.
OPTIMIZATION
The proposed circuit was tested and characterized in a
standard low power 40nm TSMC CMOS process. To avoid a
short channel effect, the channel length was set three times
larger than the minimum technology Lmin namely, L=120nm.
The widths of the switches and additional parameters are
adjusted by a global optimization procedure using a parallel
simulated annealing algorithm. A global optimization was
performed by evaluating the average efficiency and
unregulated output VDD over a range of switches’ widths and
flying capacitors Cf1=Cf2, until the system specifications were
satisfied. As mentioned above, to facilitate a variable output
VDD, the following optimization is based on a behavioral
Verilog-A controller which switches conveniently between
the four possible topologies.
The optimization procedure was conducted using the
following assumptions and conditions:
7) All losses are considered except the losses of the control
circuit, which is reasonable to assume negligible
compared with major loss factors,
8) The switching frequency fsw was set for simplicity to a
fixed value of fsw=26MHz.
9) The SCC was implemented with low Vt MOS transistors
of the process library,
10) The output capacitor (Fig. 3) was set to CL=1nF to fulfill
TABLE І
OPTIMIZATION OF SCC PARAMETERS
Optimization range
Optimized Parameter
Final value
(min:step:max)
W1=W6
1μm:30:400μm
18.03μm
W4=W9
1μm:30:400μm
62.30μm
W2
1μm:30:400μm
27.26μm
W3
1μm:30:400μm
115.8μm
W5
1μm:30:400μm
41.21μm
W7
1μm:30:400μm
27.26μm
W8
1μm:30:400μm
264.6μm
W10
1μm:30:400μm
33.52μm
mf1= mf2
1:30:1000
386
The parameter Wi corresponds to the width of the switch Mi where
i=1,2,…,10. The parameters mf1=mf2 define the number of 1.14pF @ 1.1V
nMOS capacitors connected in parallel to implement the flying capacitors
Cf1=Cf2.
a requirement of Δripple=8mV maximum output ripple by
the relation CL=Io/(Δripplefsw) [12].
Each designable parameter was constrained to take values
from a limited range. The performance function of the circuit,
which also serves as goal function with highest weight, is the
average efficiency of the four topologies defined as
ηavg =
η14 + η13 + η12 + η34
4
(4)
where η14, η13, η12 and η23 are the efficiencies of topologies
G={1/4,1/3,1/2,2/3}, respectively. The efficiencies were
evaluated at a maximum current of Io=200uA and with the
corresponding unregulated output voltages (open loop
control). Unregulated output voltage is the obtainable steady
state output voltage of a topology, while the output of the
comparator Vcomp (Fig. 3) is maintained in a high state. The
average efficiency ηavg and the four efficiencies at the
respective unregulated maximum output voltages were
constrained to satisfy the following,
78% ≤ ηavg ≤ 83%
and simultaneously,
761
(5)
(a)
(b)
Fig. 5. Open loop key waveforms of the SCC at Io=200μA. Traces from top
to bottom iin, iCf1, vDD for: (a) G=1/2, (b) G=1/4.
Fig. 6. SCC efficiency versus load voltage VDD with and without G=1/4
topology over 0.18V≤VDD≤0.6V for Io=200μA.
Fig. 7. Layout of the proposed SCC.
(a)
(b)
Fig. 8. Closed loop dynamic step response of vcomp (top) and vDD (bottom)
with: (a) output current Io step from 10μA to 200μA at VDD=0.2V, (b) output
voltage VDD step from 0.25V to 0.5V at Io=200μA.
IV.
SIMULATION RESULTS
The SCC was implemented and simulated using Cadence
Spectre simulator. Flying capacitors are obtained using
nMOS capacitors connected in parallel. In this design, the
VDD(13) ≥ 0.3V
(6) bulk of all nMOS transistors have been tied to ground while
VDD(12) ≥ 0.5V
the bulk of the pMOS transistors were tied to VBAT=1.1V. No
VDD(23) ≥ 0.6V
level shifters were used hence, the input voltage VBAT has
been used as a rail for the gate drive of all transistors, causing
to a gate voltage swing between ground and VBAT.
while letting the optimizer engine to choose values such that
Fig. 5 shows key waveforms of the SCC at two operating
the SCC comply with constraints (5) and (6). In our case the points. As evident from the figure the parameters of the SCC
average efficiency ηavg constrained between 78% and 83%, are optimized to work in incomplete transfer mode. It can be
which is acceptable since most SCC designs actually fall into noticed that using G=1/2 topology the operation is governed
this range.
by two clock phases while with G=1/4 topology, one clock
TABLE І summarizes all design variables involved in the period is divided into three time sessions.
optimization procedure, corresponding optimization ranges of
The efficiency plot of both conventional and proposed SC
legal values and the final optimum values. We note that the converters, while delivering a load current of 200μA is
notation MIN:STEPS:MAX in TABLE І represents depicted in Fig. 6. The result shows that the proposed SCC
optimization scanning range in which MIN and MAX are the dramatically improves the efficiency at low output voltages.
lower and upper bounds, respectively. The parameter STEPS Specifically, the SCC efficiency is improved by 16% in the
defines number of unequally spaced values between MIN and vicinity of VDD=200mV as compared to the one using a
MAX limits. For example, the format 1μm:30:400μm conventional 9 switch topology [6], [8] while remaining with
indicates that the engine searches automatically up to 30 the same efficiency at the rest of the range. The SCC achieves a
different unequally spaced widths values within 1μm to peak efficiency of 87% at VDD=0.53V with 200μA load
400μm to comply with the optimization criteria.
current.
VDD(14) ≥ 0.2V
762
Fig. 7 shows the layout of the SCC power stage. The total
active area that is consumed by the switches and the flying
capacitors is 0.086mm2. Fig. 8 depicts the post-layout
simulation transient response of the SCC when the reference
voltage VREF and the output load current Io are allowed to
change.
Theoretically, the load current could be higher however the
aim of the study is to present a general concept of SCC
optimization. Furthermore, in higher output power the SCC is
subject to performance degradation due to higher
voltage/current ripples, parasitical effects and larger driver.
Nevertheless, it is evident that the proposed circuit has a
comparatively small number of power switches and silicon
area, while supporting four different conversion ratios.
V.
CONCLUSIONS
This work has presented an SC converter with four
conversion ratios. We have shown that the proposed
converter can deliver scalable load voltages using the core
40nm 1.1V CMOS devices. The presented concept is general
and not depends on particular implementation technology.
Four different conversion ratios were employed by the
addition of a single power switch to the conventional
topology (Fig. 1). The additional conversion ratio of G=1/4
was obtained by dividing the charge transfer process into
three time sessions. Simulation results showed that the
proposed SCC dramatically improves the efficiency in sub200mV load voltages. The SCC achieves an efficiency
improvement of 16% in the vicinity of VDD=200mV as
compared to the conventional topology (Fig. 1) and a peak
efficiency of 87% at VDD=0.53V.
It can thus be concluded that the proposed optimization
procedure provides an effective solution for designing SCC
along with constraints on parameters’ values.
[7]
F. Su and W. H. Ki, “Component-Efficient Multiphase SwitchedCapacitor DC–DC Converter with Configurable Conversion Ratios for
LCD Driver Applications,” IEEE Trans. Circuits and Systems-ІІ:
Express Briefs, vol. 55, no. 8, pp. 753–757, August 2008.
[8] H. P. Le, M. Seeman, S. Sanders, V. Sathe, S. Naffziger and E. Alon,
“A 32nm Fully-Integrated Reconfigurable Switched Capacitor DC-DC
Converter Delivering 0.55W/mm2 at 77% Efficiency,” in Proc. IEEE
International Solid-State Circuit Conf. (ISSCC), San Francisco,
February 7-11, 2010, pp. 210–211.
[9] G. Palumbo, D. Pappalardo, and M. Gaibotti, “Charge-Pump Circuits:
Power-Consumption Optimization,” IEEE Trans. Circuits and SystemsІ: Fundamental Theory and Applications, vol. 49, no. 11, pp. 1535–
1542, Nov. 2002.
[10] S. Ben-Yaakov, “On the Influence of Switch Resistances on Switched
Capacitor Converters Losses,” IEEE Trans. Ind. Elect., vol. 59, no. 1,
pp. 638–640, Jan. 2012.
[11] M. Evzelman and S. Ben-Yaakov, “Optimal Switch Resistances in
Switched Capacitor Converters,” in Proc. IEEE 26th Convention of
Electrical and Electronics Engineers in Israel (IEEEI), pp. 436-439,
Eilat, Israel, 2010.
[12] L. Su, D. Ma, and A. P. Brokaw, “Design and Analysis of monolithic
Step-Down SC Power Converter with Sub-threshold DPWM Control
for Self Powered Wireless Sensors,” IEEE Trans. Circuits and SystemsІ: Regular Papers, vol. 57, no. 1, pp. 280–290, Jan. 2010.
ACKNOWLEDGMENT
This research was supported by THE ISRAEL SCIENCE
FOUNDATION (grant No. 476/08) and by the Paul Ivanier
Center for Robotics and Production management.
REFERENCES
[1]
[2]
[3]
[4]
[5]
[6]
A. Teman and A. Fish, “Sub-threshold and Near-threshold SRAM
Design,” in Proc. IEEE 26th Convention of Electrical and Electronics
Engineers in Israel (IEEEI), pp. 608-612, Eilat, Israel, 2010.
A. Wang, B. Calhoun, and A. Chandrakasan, “Sub-Threshold for UltraLow-Power Systems,” New York: Springer, 2006.
D. Maksimovic and S. Dhar, “Switched Capacitor DC-DC converters
for Low-Power On-Chip Applications,” in Proc. Power Electronics
Specialist Conf. (PESC), 1999 Record, pp. 54–59.
G. Zhu and A. Ioinovici, “Steady-state characteristics of switchedcapacitor electronic converters,” J. Circuits, Syst., Compute. (JCSC),
vol. 7, no. 2, pp. 69–91, 1997.
S. Ben-Yaakov and A. Kushnerov, “Algebraic Foundation of Self
Adjusting Switched Capacitors Converters,” in Proc. IEEE Energy
Conversion and Exposition (ECCE), San Jose, California, USA,
September 20-24, 2009, pp. 1582–1589.
M. Ma, “Design of High Efficiency Step-Down Switched Capacitor
DC/DC Converter,” M.S. thesis, Oregon state university, 2003.
763
APPENDIX
HYSTERETIC CONTROL BLOCK IN VERILOG-A
`include "constants.vams"
`include "disciplines.vams"
module Hysteretic_Control(comp,ref,dc);
input ref,dc;
output comp;
electrical comp,ref,dc;
parameter real period=1n;
parameter real offset=0;
parameter real hyst=0.01;
parameter real logic_high=1.1;
real samp;
integer q;
analog begin
@(timer(offset,period)) begin
samp=V(dc);
end
if (samp>(V(ref)+hyst)) begin
q=1;
end
else if (samp<(V(ref)-hyst)) begin
q=0;
end
V(comp) <+ logic_high*!q;
end
endmodule
Download