Standard Resistor Values (±
± 5%)
1.0
1.1
1.2
1.3
1.5
1.6
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
300
330
360
390
430
470
510
560
620
680
750
820
910
1.0K
1.1K
1.2K
1.3K
1.5K
1.6K
1.8K
2.0K
2.2K
2.4K
2.7K
3.0K
3.3K
3.6K
3.9K
4.3K
4.7K
5.1K
5.6K
6.2K
6.8K
7.5K
8.2K
9.1K
10K
11K
12K
13K
15K
16K
18K
20K
22K
24K
27K
30K
33K
36K
39K
43K
47K
51K
56K
62K
68K
75K
82K
91K
100K
110K
120K
130K
150K
160K
180K
200K
220K
240K
270K
300K
330K
360K
390K
430K
470K
510K
560K
620K
680K
750K
820K
910K
1.0M
1.1M
1.2M
1.3M
1.5M
1.6M
1.8M
2.0M
2.2M
2.4M
2.7M
3.0M
3.3M
3.6M
3.9M
4.3M
4.7M
5.1M
5.6M
6.2M
6.8M
7.5M
8.2M
9.1M
Standard Capacitor Values (±
± 10%)
10pF
12pF
15pF
18pF
22pF
27pF
33pF
39pF
47pF
56pF
68pF
82pF
100pF
120pF
150pF
180pF
220pF
270pF
330pF
390pF
470pF
560pF
680pF
820pF
1000pF
1200pF
1500pF
1800pF
2200pF
2700pF
3300pF
3900pF
4700pF
5600pF
6800pF
8200pF
.010µF
.012µF
.015µF
.018µF
.022µF
.027µF
.033µF
.039µF
.047µF
.056µF
.068µF
.082µF
.10µF
.12µF
.15µF
.18µF
.22µF
.27µF
.33µF
.39µF
.47µF
.56µF
.68µF
.82µF
1.0µF
1.2µF
1.5µF
1.8µF
2.2µF
2.7µF
3.3µF
3.9µF
4.7µF
5.6µF
6.8µF
8.2µF
10µF
22µF
33µF
47uF
LM139/LM239/LM339/LM2901/LM3302
Low Power Low Offset Voltage Quad Comparators
General Description
Features
The LM139 series consists of four independent precision
voltage comparators with an offset voltage specification as
low as 2 mV max for all four comparators. These were
designed specifically to operate from a single power supply
over a wide range of voltages. Operation from split power
supplies is also possible and the low power supply current
drain is independent of the magnitude of the power supply
voltage. These comparators also have a unique characteristic in that the input common-mode voltage range includes
ground, even though operated from a single power supply
voltage.
n
n
n
n
n
Application areas include limit comparators, simple analog to
digital converters; pulse, squarewave and time delay generators; wide range VCO; MOS clock timers; multivibrators
and high voltage digital logic gates. The LM139 series was
designed to directly interface with TTL and CMOS. When
operated from both plus and minus power supplies, they will
directly interface with MOS logic — where the low power
drain of the LM339 is a distinct advantage over standard
comparators.
n
n
n
n
n
n
n
Wide supply voltage range
LM139/139A Series
2 to 36 VDC or ± 1 to ± 18 VDC
LM2901:
2 to 36 VDC or ± 1 to ± 18 VDC
LM3302:
2 to 28 VDC or ± 1 to ± 14 VDC
Very low supply current drain (0.8 mA) — independent
of supply voltage
Low input biasing current:
25 nA
± 5 nA
Low input offset current:
± 3 mV
Offset voltage:
Input common-mode voltage range includes GND
Differential input voltage range equal to the power
supply voltage
Low output saturation voltage:
250 mV at 4 mA
Output voltage compatible with TTL, DTL, ECL, MOS
and CMOS logic systems
Advantages
n
n
n
n
n
n
High precision comparators
Reduced VOS drift over temperature
Eliminates need for dual supplies
Allows sensing near GND
Compatible with all forms of logic
Power drain suitable for battery operation
One-Shot Multivibrator with Input
Lock Out
00570612
© 2004 National Semiconductor Corporation
DS005706
www.national.com
LM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators
March 2004
LM139/LM239/LM339/LM2901/LM3302
Distributors for availability and specifications.
Absolute Maximum Ratings (Note 10)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
LM139/LM239/LM339
LM139A/LM239A/LM339A
LM3302
LM2901
Supply Voltage, V+
36 VDC or ± 18 VDC
28 VDC or ± 14 VDC
36 VDC
28 VDC
−0.3 VDC to +36 VDC
−0.3 VDC to +28 VDC
50 mA
50 mA
Molded DIP
1050 mW
1050 mW
Cavity DIP
1190 mW
Small Outline Package
760 mW
Differential Input Voltage (Note 8)
Input Voltage
Input Current (VIN < −0.3 VDC),
(Note 3)
Power Dissipation (Note 1)
Output Short-Circuit to GND,
(Note 2)
Storage Temperature Range
Continuous
Continuous
−65˚C to +150˚C
−65˚C to +150˚C
Lead Temperature
(Soldering, 10 seconds)
260˚C
260˚C
Operating Temperature Range
−40˚C to +85˚C
LM339/LM339A
0˚C to +70˚C
LM239/LM239A
−25˚C to +85˚C
LM2901
−40˚C to +85˚C
LM139/LM139A
−55˚C to +125˚C
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260˚C
260˚C
Vapor Phase (60 seconds)
215˚C
215˚C
Infrared (15 seconds)
220˚C
220˚C
Small Outline Package
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of
soldering surface mount devices.
ESD rating (1.5 kΩ in series with 100 pF)
600V
600V
Electrical Characteristics
(V+=5 VDC, TA = 25˚C, unless otherwise stated)
Parameter
Conditions
LM139A
Min Typ
LM239A, LM339A
Max
Min
Typ
LM139
Max
Min Typ
Units
Max
Input Offset Voltage
(Note 9)
1.0
2.0
1.0
2.0
2.0
5.0
mVDC
Input Bias Current
IIN(+) or IIN(−) with Output in
25
100
25
250
25
100
nADC
25
5.0
50
3.0
25
nADC
Linear Range, (Note 5), VCM=0V
Input Offset Current
Input Common-Mode
Voltage Range
Supply Current
IIN(+)−IIN(−), VCM=0V
+
V =30 VDC (LM3302,
3.0
+
0
V −1.5
+
0
V −1.5
+
0
V −1.5
VDC
V+ = 28 VDC) (Note 6)
RL = ∞ on all Comparators,
0.8
2.0
RL = ∞, V+ = 36V,
0.8
2.0
0.8
2.0
mADC
1.0
2.5
1.0
2.5
mADC
(LM3302, V+ = 28 VDC)
Voltage Gain
RL≥15 kΩ, V+ = 15 VDC
50
200
50
200
50
200
V/mV
300
ns
VO = 1 VDC to 11 VDC
Large Signal
Response Time
www.national.com
VIN = TTL Logic Swing, VREF =
300
1.4 VDC, VRL = 5 VDC,
2
300
(Continued)
(V+=5 VDC, TA = 25˚C, unless otherwise stated)
Parameter
Conditions
LM139A
Min Typ
LM239A, LM339A
Max
Min
Typ
Max
LM139
Min Typ
Units
Max
RL = 5.1 kΩ
Response Time
VRL = 5 VDC, RL = 5.1 kΩ,
Output Sink Current
VIN(−) = 1 VDC, VIN(+) = 0,
1.3
1.3
1.3
µs
16
mADC
(Note 7)
6.0
16
6.0
16
6.0
VO ≤ 1.5 VDC
Saturation Voltage
VIN(−) = 1 VDC, VIN(+) = 0,
250
400
250
400
250
400
mVDC
ISINK ≤ 4 mA
Output Leakage
Current
VIN(+) = 1 VDC,VIN(−) = 0,
0.1
0.1
0.1
nADC
VO = 5 VDC
Electrical Characteristics
(V+ = 5 VDC, TA = 25˚C, unless otherwise stated)
Parameter
Conditions
LM239, LM339
Min
Typ
LM2901
Max
Min Typ
LM3302
Max
Min Typ
Units
Max
Input Offset Voltage
(Note 9)
2.0
5.0
2.0
7.0
3
20
mVDC
Input Bias Current
IIN(+) or IIN(−) with Output in
25
250
25
250
25
500
nADC
Input Offset Current
IIN(+)−IIN(−), VCM = 0V
Input Common-Mode
V+ = 30 VDC (LM3302,
Linear Range, (Note 5), VCM=0V
Voltage Range
Supply Current
5.0
50
V+−1.5
0
5
50
V+−1.5
0
3
0
100
nADC
V+−1.5
VDC
+
V = 28 VDC) (Note 6)
RL = ∞ on all Comparators,
0.8
2.0
0.8
2.0
0.8
2.0
mADC
RL = ∞, V+ = 36V,
1.0
2.5
1.0
2.5
1.0
2.5
mADC
(LM3302, V+ = 28 VDC)
Voltage Gain
RL ≥ 15 kΩ, V+ = 15 VDC
50
200
25
100
2
30
V/mV
VO = 1 VDC to 11 VDC
Large Signal
Response Time
VIN = TTL Logic Swing, VREF =
300
300
300
ns
1.3
1.3
1.3
µs
16
mADC
1.4 VDC, VRL = 5 VDC,
RL = 5.1 kΩ,
Response Time
VRL = 5 VDC, RL = 5.1 kΩ,
Output Sink Current
VIN(−)= 1 VDC, VIN(+) = 0,
(Note 7)
6.0
16
6.0
16
6.0
VO ≤ 1.5 VDC
Saturation Voltage
VIN(−) = 1 VDC, VIN(+) = 0,
Output Leakage
VIN(+) = 1 VDC,VIN(−) = 0,
250
400
250
400
250
500
mVDC
ISINK ≤ 4 mA
Current
0.1
0.1
0.1
nADC
LM139
Units
VO = 5 VDC
Electrical Characteristics
(V+ = 5.0 VDC, (Note 4))
Parameter
Conditions
LM139A
Min Typ
Max
LM239A, LM339A
Min Typ
Max
Min Typ
Max
Input Offset Voltage
(Note 9)
4.0
4.0
9.0
Input Offset Current
IIN(+)−IIN(−), VCM = 0V
100
150
100
mVDC
nADC
Input Bias Current
IIN(+) or IIN(−) with Output in
300
400
300
nADC
Input Common-Mode
V+=30 VDC (LM3302,
V+−2.0
VDC
Voltage Range
V+ = 28 VDC) (Note 6)
Linear Range, VCM = 0V (Note 5)
0
3
V+−2.0
0
V+−2.0
0
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LM139/LM239/LM339/LM2901/LM3302
Electrical Characteristics
LM139/LM239/LM339/LM2901/LM3302
Electrical Characteristics
(Continued)
(V+ = 5.0 VDC, (Note 4))
Parameter
Conditions
LM139A
Min Typ
Saturation Voltage
VIN(−)=1 VDC, VIN(+) = 0,
LM239A, LM339A
Max
Min Typ
Max
LM139
Min Typ
Units
Max
700
700
700
mVDC
1.0
1.0
1.0
µADC
36
36
36
VDC
ISINK ≤ 4 mA
Output Leakage Current
VIN(+)
=
1 VDC, VIN(−) = 0,
VO = 30 VDC, (LM3302,
VO = 28 VDC)
Keep all VIN’s ≥ 0 VDC (or V−,
Differential Input Voltage
if used), (Note 8)
Electrical Characteristics
(V+ = 5.0 VDC, (Note 4))
Parameter
Conditions
LM239, LM339
Min Typ
Max
LM2901
Min Typ
LM3302
Max
Min Typ
Units
Max
Input Offset Voltage
(Note 9)
9.0
9
15
40
Input Offset Current
IIN(+)−IIN(−), VCM = 0V
150
50
200
300
mVDC
nADC
Input Bias Current
IIN(+) or IIN(−) with Output in
400
200
500
1000
nADC
V+−2.0
VDC
700
700
mVDC
1.0
1.0
1.0
µADC
36
36
28
VDC
Linear Range, VCM = 0V (Note 5)
Input Common-Mode
V+ = 30 VDC (LM3302, V+ = 28 VDC)
Voltage Range
(Note 6)
Saturation Voltage
VIN(−) = 1 VDC, VIN(+) = 0,
V+−2.0
700
V+−2.0
0
400
0
ISINK ≤ 4 mA
Output Leakage Current VIN(+)
=
1 VDC, VIN(−) = 0,
VO = 30 VDC, (LM3302, V
O
= 28 VDC)
Differential Input Voltage Keep all VIN’s ≥ 0 VDC (or V−,
if used), (Note 8)
Note 1: For operating at high temperatures, the LM339/LM339A, LM2901, LM3302 must be derated based on a 125˚C maximum junction temperature and a
thermal resistance of 95˚C/W which applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM239 and LM139 must be derated
based on a 150˚C maximum junction temperature. The low bias dissipation and the “ON-OFF” characteristic of the outputs keeps the chip dissipation very small
(PD≤100 mW), provided the output transistors are allowed to saturate.
Note 2: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 20 mA independent of the magnitude of V+.
Note 3: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns
to a value greater than −0.3 VDC (at 25˚)C.
Note 4: These specifications are limited to −55˚C ≤ TA ≤ +125˚C, for the LM139/LM139A. With the LM239/LM239A, all temperature specifications are limited to
−25˚C ≤ TA ≤ +85˚C, the LM339/LM339A temperature specifications are limited to 0˚C ≤ TA ≤ +70˚C, and the LM2901, LM3302 temperature range is −40˚C ≤ TA
≤ +85˚C.
Note 5: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so
no loading change exists on the reference or input lines.
Note 6: The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3V. The upper end of the common-mode
voltage range is V+ −1.5V at 25˚C, but either or both inputs can go to +30 VDC without damage (25V for LM3302), independent of the magnitude of V+.
Note 7: The response time specified is a 100 mV input step with 5 mV overdrive. For larger overdrive signals 300 ns can be obtained, see typical performance
characteristics section.
Note 8: Positive excursions of input voltage may exceed the power supply level. As long as the other voltage remains within the common-mode range, the
comparator will provide a proper output state. The low input voltage state must not be less than −0.3 VDC (or 0.3 VDCbelow the magnitude of the negative power
supply, if used) (at 25˚C).
Note 9: At output switch point, VO.1.4 VDC, RS = 0Ω with V+ from 5 VDC to 30 VDC; and over the full input common-mode range (0 VDC to V+ −1.5 VDC), at 25˚C.
For LM3302, V+ from 5 VDC to 28 VDC.
Note 10: Refer to RETS139AX for LM139A military specifications and to RETS139X for LM139 military specifications.
www.national.com
4
MM54HC05/MM74HC05
Hex Inverter (Open Drain)
General Description
Features
The MM54HC05/MM74HC05 are logic functions fabricated
by using advanced silicon-gate CMOS technology, which
provides the inherent benefits of CMOSÐlow quiescent
power and wide power supply range. These devices are
also functionally and pin-out compatible with standard
DM54LS/DM74LS logic families. The MM54HC05/
MM74HC05 open drain Hex Inverter requires the addition of
an external resistor to perform a wire-NOR function.
All inputs are protected from static discharge damage by
internal diodes to VCC and ground.
Y
Y
Y
Y
Open drain for wire-NOR function
Fanout of 10 LS-TTL loads
Typical propagation delays:
tPZL (with 1 kX resistor) 8 ns
tPLZ (with 1 kX resistor) 13 ns
Low input current: 1 mA maximum
Connection Diagram
Dual-In-Line Package
TL/F/9388 – 1
Top View
Order Number MM54HC05 or MM74HC05
Logic Diagram
Typical Application
TL/F/9388 – 2
TL/F/9388 – 3
Note: Can be extended to more than 2 inputs.
C1995 National Semiconductor Corporation
TL/F/9388
RRD-B30M105/Printed in U. S. A.
MM54HC05/MM74HC05 Hex Inverter (Open Drain)
January 1988
Absolute Maximum Ratings (Notes 1 & 2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (VCC)
DC Input or Output Voltage
(VIN, VOUT)
Operating Temp. Range (TA)
MM74HC
MM54HC
Input Rise or Fall Times
(tr, tf) VCC e 2.0V
VCC e 4.5V
VCC e 6.0V
b 0.5V to a 7.0V
Supply Voltage (VCC)
b 1.5V to VCC a 1.5V
DC Input Voltage (VIN)
b 0.5V to VCC a 0.5V
DC Output Voltage (VOUT)
g 20 mA
Clamp Diode Current (IIK, IOK)
g 25 mA
DC Output Current, per pin (IOUT)
g 50 mA
DC VCC or GND Current, per pin (ICC)
b 65§ C to a 150§ C
Storage Temperature Range (TSTG)
Power Dissipation (PD)
(Note 3)
600 mW
S.O. Package only
500 mW
Lead Temperature (TL)
(Soldering 10 seconds)
260§ C
DC Electrical Characteristics
Symbol
Parameter
Conditions
Min
2
0
Max
6
VCC
Units
V
V
b 40
b 55
a 85
a 125
§C
§C
1000
500
400
ns
ns
ns
(Note 4)
VCC
TA e 25§ C
74HC
54HC
TA eb40§ C to a 85§ C TA eb55§ C to a 125§ C Units
Typ
Guaranteed Limits
VIH
Minimum High Level
Input Voltage
2.0V
4.5V
6.0V
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
V
VIL
Maximum Low Level
Input Voltage**
2.0V
4.5V
6.0V
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
V
V
VOL
Maximum Low Level
Output Voltage
VIN e VIH
lIOUTl s20 mA
RL e %
VIN e VIH
lIOUTl s4.0 mA
lIOUTl s5.2 mA
2.0V
4.5V
6.0V
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
V
4.5V
6.0V
0.2
0.2
0.26
0.26
0.33
0.33
0.4
0.4
V
V
0.5
5
10
mA
g 0.1
g 1.0
g 1.0
mA
2.0
20
40
mA
ILKG
Maximum High Level
VIN e VIH or VIL
Output Leakage Current VOUT e VCC
6.0V
IIN
Maximum Input
Current
VIN e VCC or GND 6.0V
ICC
Maximum Quiescent
Supply Current
VIN e VCC or GND 6.0V
IOUT e 0 mA
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package: b 12 mW/§ C from 65§ C to 85§ C; ceramic ‘‘J’’ package: b 12 mW/§ C from 100§ C to 125§ C.
Note 4: For a power supply of 5V g 10% the worst case output voltages (VOH and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when
designing with this supply. Worst case VIH and VIL occur at VCC e 5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst case leakage current
(IIN, ICC, and IOZ) occur for CMOS at the higher voltage and so the 6.0V values should be used.
**VIL limits are currently tested at 20% of VCC. The above VIL specification (30% of VCC) will be implemented no later than Q1, CY’89.
2
AC Electrical Characteristics
VCC e 5V, TA e 25§ C, CL e 15 pF, tr e tf e 6 ns
Symbol
Parameter
Conditions
Typ
tPZL, tPLZ
Maximum Propagation Delay
RL e 1 kX
8
AC Electrical Characteristics
Symbol
Parameter
Conditions
Guaranteed
Limit
Units
ns
VCC e 2.0V to 6.0V, CL e 50 pF, tr e tf e 6 ns unless otherwise specified
VCC
TA e 25§ C
Typ
74HC
TA eb40§ C to a 85§ C
54HC
TA eb55§ C to a 125§ C
Units
Guaranteed Limits
tPZL
Maximum Propagation
Delay
RL e 1 kX
2.0V
4.5V
6.0V
30
8
7
75
15
13
95
19
16
110
22
19
ns
ns
ns
tPLZ
Maximum Propagation
Delay
RL e 1 kX
2.0V
4.5V
6.0V
30
13
12
90
18
15
115
23
20
135
27
23
ns
ns
ns
tTHL
Maximum Output
Fall Time
2.0V
4.5V
6.0V
30
8
7
75
15
13
95
19
16
110
22
19
ns
ns
ns
CPD
Power Dissipation
Capacitance (Note 5)
CIN
Maximum Input
Capacitance
(per gate)
8
5
pF
10
10
10
pF
Note 5: CPD determines the no load dynamic power consumption, PD e CPD VCC2 f a ICC VCC, and the no load dynamic current consumption, IS e CPD VCC f a ICC.
The power dissipated by RL is not included.
Physical Dimensions inches (millimeters)
Order Number MM54HC05J or MM74HC05J
NS Package Number J14A
3
SLRS007B − NOVEMBER 1986 − REVISED NOVEMBER 1995
•
•
•
•
•
•
•
•
•
•
•
•
•
•
NE PACKAGE
(TOP VIEW)
1-A Output-Current Capability Per Driver
Applications Include Half-H and Full-H
Solenoid Drivers and Motor Drivers
Designed for Positive-Supply Applications
Wide Supply-Voltage Range of 4.5 V to 36 V
TTL- and CMOS-Compatible
High-Impedance Diode-Clamped Inputs
Separate Input-Logic Supply
Thermal Shutdown
Internal ESD Protection
Input Hysteresis Improves Noise Immunity
3-State Outputs
Minimized Power Dissipation
Sink/Source Interlock Circuitry Prevents
Simultaneous Conduction
No Output Glitch During Power Up or
Power Down
Improved Functional Replacement for the
SGS L293
1,2EN
1A
1Y
HEAT SINK AND
GROUND
1
16
2
15
3
14
4
13
5
12
2Y
2A
6
11
7
10
VCC2
8
9
VCC1
4A
4Y
HEAT SINK AND
GROUND
3Y
3A
3,4EN
FUNCTION TABLE
(each driver)
INPUTS†
OUTPUT
A
EN
Y
H
H
H
L
H
L
X
L
Z
H = high-level, L = low-level
X = irrelevant
Z = high-impedance (off)
† In the thermal shutdown
mode, the output is in a highimpedance state regardless
of the input levels.
description
The SN754410 is a quadruple high-current half-H
driver designed to provide bidirectional drive
currents up to 1 A at voltages from 4.5 V to 36 V.
The device is designed to drive inductive loads
such as relays, solenoids, dc and bipolar stepping
motors, as well as other high-current/high-voltage
loads in positive-supply applications.
All inputs are compatible with TTL-and low-level CMOS logic. Each output (Y) is a complete totem-pole driver
with a Darlington transistor sink and a pseudo-Darlington source. Drivers are enabled in pairs with drivers 1 and
2 enabled by 1,2EN and drivers 3 and 4 enabled by 3,4EN. When an enable input is high, the associated drivers
are enabled and their outputs become active and in phase with their inputs. When the enable input is low, those
drivers are disabled and their outputs are off and in a high-impedance state. With the proper data inputs, each
pair of drivers form a full-H (or bridge) reversible drive suitable for solenoid or motor applications.
A separate supply voltage (VCC1) is provided for the logic input circuits to minimize device power dissipation.
Supply voltage VCC2 is used for the output circuits.
The SN754410 is designed for operation from − 40°C to 85°C.
Copyright  1995, Texas Instruments Incorporated
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"&#"0 !)) '!!&"&#+
• DALLAS, TEXAS 75265
• HOUSTON, TEXAS 77251−1443
POST OFFICE BOX 655303
POST OFFICE BOX 1443
1
SLRS007B − NOVEMBER 1986 − REVISED NOVEMBER 1995
logic symbol†
1A
1,2EN
2A
3A
3, 4EN
4A
logic diagram
2
3
1
EN
1, 2EN
EN
7
6
10
11
9
EN
2A
2Y
3A
3Y
3, 4EN
EN
15
1A
1Y
14
4A
4Y
2
3
7
6
10
11
9
15
14
† This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
schematics of inputs and outputs
EQUIVALENT OF EACH INPUT
TYPICAL OF ALL OUTPUTS
VCC2
VCC1
Current
Source
Output
Input
GND
2
GND
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
•
1Y
1
2Y
3Y
4Y
SLRS007B − NOVEMBER 1986 − REVISED NOVEMBER 1995
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Output supply voltage range, VCC1 (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 36 V
Output supply voltage range, VCC2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 36 V
Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Output voltage range, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −3 V to VCC2 + 3 V
Peak output current (nonrepetitive, tw ≤ 5 ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 2 A
Continuous output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 1.1 A
Continuous total power dissipation at (or below) 25°C free-air temperature (see Note 2) . . . . . . . . 2075 mW
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 85°C
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to network GND.
2. For operation above 25°C free-air temperature, derate linearly at the rate of 16.6 mW/°C. To avoid exceeding the design maximum
virtual junction temperature, these ratings should not be exceeded. Due to variations in individual device electrical characteristics
and thermal resistance, the built-in thermal overload protection can be activated at power levels slightly above or below the rated
dissipation.
recommended operating conditions
MIN
MAX
Output supply voltage, VCC1
4.5
5.5
V
Output supply voltage, VCC2
4.5
36
V
High-level input voltage, VIH
2
−0.3‡
5.5
V
0.8
V
−40
125
°C
Low-level input voltage, VIL
Operating virtual junction temperature, TJ
UNIT
Operating free-air temperature, TA
−40
85
°C
‡ The algebraic convention, in which the least positive (most negative) limit is designated as minimum, is used in this data sheet for logic voltage
levels.
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
•
3
SLRS007B − NOVEMBER 1986 − REVISED NOVEMBER 1995
electrical characteristics over recommended ranges of supply voltage and free-air temperature
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIK
Input clamp voltage
II = − 12 mA
IOH = − 0.5 A
VOH
High-level output voltage
IOH = − 1 A
IOH = − 1 A,
MIN
TJ = 25°C
TYP†
MAX
UNIT
−0.9
−1.5
V
VCC2 −1.5
VCC2 −2
VCC2 −1.1
VCC2 −1.8
VCC2 −1.4
1
V
Low-level output voltage
IOL = 0.5 A
IOL = 1 A
IOL = 1 A,
VOKH
High-level output clamp voltage
IOK = − 0.5 A
IOK = 1 A
VCC2 + 1.4
VCC2 + 1.9
−2
Low-level output clamp voltage
−1.3
−2.5
IOZ(off)
Off-state high-impedance-state
output current
IOK = 0.5 A
IOK = − 1 A
VO = VCC2
−1.1
VOKL
VOL
IIH
IIL
High-level input current
VO = 0
VI = 5.5 V
Low-level input current
VI = 0
ICC1
Output supply current
IO = 0
ICC2
Output supply current
IO = 0
1.4
2
TJ = 25°C
1.2
V
1.8
VCC2 + 2
VCC2 + 2.5
500
−500
V
µA
A
10
µA
−10
µA
All outputs at high level
38
All outputs at low level
70
All outputs at high impedance
25
All outputs at high level
33
All outputs at low level
20
All outputs at high impedance
† All typical values are at VCC1 = 5 V, VCC2 = 24 V, TA = 25°C.
V
mA
mA
5
switching characteristics, VCC1 = 5 V, VCC2 = 24 V, CL = 30 pF, TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
td1
td2
Delay time, high-to-low-level output from A input
400
ns
Delay time, low-to-high-level output from A input
800
ns
tTLH
tTHL
Transition time, low-to-high-level output
300
ns
300
ns
tr
tf
Rise time, pulse input
tw
ten1
Pulse duration
Enable time to the high level
700
ns
ten2
tdis1
Enable time to the low level
400
ns
900
ns
tdis2
Disable time from the low level
600
ns
4
Transition time, high-to-low-level output
See Figure 1
Fall time, pulse input
See Figure 2
Disable time from the high level
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
•
TCRT5000, TCRT5000L
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
FEATURES
• Package type: leaded
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 10.2 x 5.8 x 7
• Peak operating distance: 2.5 mm
• Operating range within > 20 % relative collector
current: 0.2 mm to 15 mm
19156_2
• Typical output current under test: IC = 1 mA
C
• Daylight blocking filter
A
• Emitter wavelength: 950 nm
E
Top view
• Lead (Pb)-free soldering released
C
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
19156_1
DESCRIPTION
APPLICATIONS
The TCRT5000 and TCRT5000L are reflective sensors
which include an infrared emitter and phototransistor in a
leaded package which blocks visible light. The package
includes two mounting clips. TCRT5000L is the long lead
version.
• Position sensor for shaft encoder
and
in
• Detection of reflective material such as paper, IBM cards,
magnetic tapes etc.
• Limit switch for mechanical motions in VCR
• General purpose - wherever the space is limited
PRODUCT SUMMARY
PART NUMBER
DISTANCE FOR
MAXIMUM CTRrel (1)
(mm)
DISTANCE RANGE FOR
RELATIVE Iout > 20 %
(mm)
TYPICAL OUTPUT
CURRENT UNDER TEST (2)
(mA)
DAYLIGHT
BLOCKING FILTER
INTEGRATED
TCRT5000
2.5
0.2 to 15
1
Yes
TCRT5000L
2.5
0.2 to 15
1
Yes
Notes
(1) CTR: current transfere ratio, I /I
out in
(2) Conditions like in table basic charactristics/sensors
ORDERING INFORMATION
PACKAGING
VOLUME (1)
REMARKS
TCRT5000
Tube
MOQ: 4500 pcs, 50 pcs/tube
3.5 mm lead length
TCRT5000L
Tube
MOQ: 2400 pcs, 48 pcs/tube
15 mm lead length
ORDERING CODE
Note
MOQ: minimum order quantity
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT (EMITTER)
Reverse voltage
VR
5
V
Forward current
IF
60
mA
Forward surge current
Power dissipation
Junction temperature
Document Number: 83760
Rev. 1.7, 17-Aug-09
tp ≤ 10 µs
IFSM
3
A
Tamb ≤ 25 °C
PV
100
mW
Tj
100
°C
For technical questions, contact: sensorstechsupport@vishay.com
www.vishay.com
1
TCRT5000, TCRT5000L
Reflective Optical Sensor with
Transistor Output
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
5
V
OUTPUT (DETECTOR)
Collector current
Tamb ≤ 55 °C
Power dissipation
IC
100
mA
PV
100
mW
Tj
100
°C
Junction temperature
SENSOR
Tamb ≤ 25 °C
Total power dissipation
Ptot
200
mW
Ambient temperature range
Tamb
- 25 to + 85
°C
Storage temperature range
Tstg
- 25 to + 100
°C
Tsd
260
°C
2 mm from case, t ≤ 10 s
Soldering temperature
Note
(1) T
amb = 25 °C, unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
P - Power Dissipation (mW)
300
Coupled device
200
Phototransistor
100
IR - diode
0
25
0
95 11071
75
50
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(1)
PARAMETER
TEST CONDITION
SYMBOL
IF = 60 mA
VR = 0 V, f = 1 MHz
MIN.
TYP.
MAX.
VF
1.25
1.5
Cj
17
UNIT
INPUT (EMITTER)
Forward voltage
Junction capacitance
V
pF
Radiant intensity
IF = 60 mA, tp = 20 ms
Ie
Peak wavelength
IF = 100 mA
λP
Method: 63 % encircled energy
d
Collector emitter voltage
IC = 1 mA
VCEO
70
V
Emitter collector voltage
Ie = 100 µA
VECO
7
V
VCE = 20 V, IF = 0 A, E = 0 lx
ICEO
VCE = 5 V, IF = 10 mA,
D = 12 mm
IC (2) (3)
IF = 10 mA, IC = 0.1 mA,
D = 12 mm
VCEsat (2) (3)
Virtual source diameter
21
940
mW/sr
nm
2.1
mm
OUTPUT (DETECTOR)
Collector dark current
10
200
nA
1
2.1
mA
0.4
V
SENSOR
Collector current
Collector emitter saturation
voltage
0.5
Note
Tamb = 25 °C, unless otherwise specified
(2) See figure 3
(3) Test surface: mirror (Mfr. Spindler a. Hoyer, Part No. 340005)
(1)
www.vishay.com
2
For technical questions, contact: sensorstechsupport@vishay.com
Document Number: 83760
Rev. 1.7, 17-Aug-09
TCRT5000, TCRT5000L
Reflective Optical Sensor with
Transistor Output
Vishay Semiconductors
94 9226
IF
Flat mirror
∅ = 22.5 mm
rem. 2
IC
VCC
d = working distance
D = distance
12 ± 0.2 mm
TCRT5000
7.0 ± 0.2 mm
A
96 12314
Fig. 2 - Test Circuit
Fig. 3 - Test Circuit
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
10
IC - Collector Current (mA)
IF - Forward Current (mA)
VCE = 5 V
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF - Forward Voltage (V)
96 11862
1
0.1
0.01
0.001
0.1
96 11763
1.2
1.1
0.9
0.8
0.7
0.6
- 30 - 20 -10 0 10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature
Document Number: 83760
Rev. 1.7, 17-Aug-09
100
10
VCE = 5 V
I F = 20 mA
1.0
96 11762
10
Fig. 6 - Collector Current vs. Forward Current
IC - Collector Current (mA)
CTR rel - Relative Current Transfer Ratio
Fig. 4 - Forward Current vs. Forward Voltage
1
I F - Forward Current (mA)
I F = 50 mA
20 mA
1
10 mA
5 mA
2 mA
0.1
1 mA
0.01
0.1
96 11764
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 7 - Collector Emitter Saturation Voltage vs. Collector Current
For technical questions, contact: sensorstechsupport@vishay.com
www.vishay.com
3
TCRT5000, TCRT5000L
Vishay Semiconductors
Reflective Optical Sensor with
Transistor Output
1.2
VCE = 5 V
I Crel - Relative Collector Current
CTR - Current Transfer Ratio (%)
100
10
1
0.1
0.1
96 11765
VCE = 10 V
I F = 20 mA
1.0
0.8
0.6
0.4
0.2
0.0
1
10
I F - Forward Current (mA)
100
Fig. 8 - Current Transfer Ratio vs. Forward Current
0
96 11766
4
8
10 12 14 16
2
6
d - Distance to Reflecting Card (mm)
Fig. 9 - Relative Collector Current vs. Distance
PACKAGE DIMENSIONS in millimeters, TCRT5000
96 12073
www.vishay.com
4
For technical questions, contact: sensorstechsupport@vishay.com
Document Number: 83760
Rev. 1.7, 17-Aug-09
PIC32MX3XX/4XX
TABLE 29-9:
DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS
DC CHARACTERISTICS
Param.
Symbol
No.
VOL
DO10
Characteristics
OSC2/CLKO
VOH
DO20
Typical
Max.
Units
Conditions
—
—
0.4
V
IOL = 7 mA, VDD = 3.6V
—
—
0.4
V
IOL = 6 mA, VDD = 2.3V
—
—
0.4
V
IOL = 3.5 mA, VDD = 3.6V
—
—
0.4
V
IOL = 2.5 mA, VDD = 2.3V
2.4
—
—
V
IOH = -12 mA, VDD = 3.6V
1.4
—
—
V
IOH = -12 mA, VDD = 2.3V
2.4
—
—
V
IOH = -12 mA, VDD = 3.6V
1.4
—
—
V
IOH = -12 mA, VDD = 2.3V
Output High Voltage
I/O Ports
DO26
Min.
Output Low Voltage
I/O Ports
DO16
Standard Operating Conditions: 2.3V to 3.6V (unless otherwise
stated)
Operating temperature
-40°C ≤TA ≤+85°C for Industrial
-40°C ≤TA ≤+105°C for V-Temp
OSC2/CLKO
TABLE 29-10: ELECTRICAL CHARACTERISTICS: BROWN-OUT RESET (BOR)
DC CHARACTERISTICS
Param.
Symbol
No.
BO10
VBOR
DS61143H-page 158
Characteristics
BOR Event on VDD
transition high-to-low
Standard Operating Conditions: 2.3V to 3.6V (unless otherwise
stated)
Operating temperature
-40°C ≤TA ≤+85°C for Industrial
-40°C ≤TA ≤+105°C for V-Temp
Min.
Typical
Max.
Units
Conditions
2.0
—
2.3
V
—
© 2011 Microchip Technology Inc.
PIC32MX3XX/4XX
TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY(3)
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤TA ≤+85°C for Industrial
-40°C ≤TA ≤+105°C for V-Temp
DC CHARACTERISTICS
Param.
No.
Symbol
Characteristics
Min.
Typical(1) Max. Units
Conditions
Program Flash Memory
D130
EP
Cell Endurance
1000
—
—
E/W
—
D131
VPR
VDD for Read
VMIN
—
3.6
V
—
D132
VPEW
VDD for Erase or Write
3.0
—
3.6
V
—
D134
TRETD
Characteristic Retention
20
—
—
Year
—
D135
IDDP
Supply Current during
Programming
—
10
—
mA
—
TWW
Word Write Cycle Time
20
—
40
μs
—
3
4.5
—
ms
—
(2)
D136
TRW
Row Write Cycle Time
(128 words per row)
D137
TPE
Page Erase Cycle Time
20
—
—
ms
—
TCE
Chip Erase Cycle Time
80
—
—
ms
—
—
—
6
μs
—
D138
LVDstartup Flash LVD Delay
Note 1:
2:
3:
Data in “Typical” column is at 3.3V, 25°C unless otherwise stated.
The minimum SYSCLK for row programming is 4 MHz. Care should be taken to minimize bus activities
during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus
loads are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The
default Arbitration mode is mode 1 (CPU has lowest priority).
Refer to the “PIC32MX Flash Programming Specification” (DS61145) for operating conditions during
programming and erase cycles.
TABLE 29-12: PROGRAM FLASH MEMORY WAIT STATE CHARACTERISTICS
DC CHARACTERISTICS
Required Flash wait states
Note 1:
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤TA ≤+85°C for Industrial
-40°C ≤TA ≤+105°C for V-Temp
SYSCLK
0 Wait State
0 to 30
1 Wait State
31 to 60
2 Wait States
61 to 80
Units
Comments
MHz
—
40 MHz maximum for PIC32MX320F032H and PIC32MX420F032H devices.
© 2011 Microchip Technology Inc.
DS61143H-page 159
PIC32MX3XX/4XX
TABLE 29-13: COMPARATOR SPECIFICATIONS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤TA ≤+85°C for Industrial
-40°C ≤TA ≤+105°C for V-Temp
DC CHARACTERISTICS
Param.
Symbol
No.
D300
D301
D302
D303
D304
D305
Note
Characteristics
Min.
Typical
Max.
Units
—
±7.5
±25
mV
Comments
AVDD = VDD,
AVSS = VSS
VICM
Input Common Mode Voltage
0
—
VDD
V
AVDD = VDD,
AVSS = VSS
(Note 2)
CMRR
Common Mode Rejection Ratio
55
—
—
dB
Max VICM = (VDD - 1)V
(Note 2)
Response Time
—
150
400
ns
AVDD = VDD,
TRESP
AVSS = VSS
(Notes 1,2)
ON2OV
Comparator Enabled to Output
—
—
10
μs
Comparator module is
Valid
configured before setting
the comparator ON bit.
(Note 2)
Internal Voltage Reference
0.57
0.6
0.63
V
—
IVREF
1: Response time measured with one comparator input at (VDD – 1.5)/2, while the other input transitions
from VSS to VDD.
2: These parameters are characterized but not tested.
VIOFF
Input Offset Voltage
TABLE 29-14: VOLTAGE REFERENCE SPECIFICATIONS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤TA ≤+85°C for Industrial
-40°C ≤TA ≤+105°C for V-Temp
DC CHARACTERISTICS
Param.
No.
Symbol
Characteristics
D310
VRES
Resolution
D311
VRAA
Absolute Accuracy
D312
Note 1:
TSET
Settling
Min.
Typical
Max.
VDD/24
—
—
—
—
—
Time(1)
Units
Comments
VDD/32
LSb
—
1/2
LSb
—
10
μs
—
Settling time measured while CVRR = 1 and CVR3:CVR0 transitions from ‘0000’ to ‘1111’. This
parameter is characterized, but not tested in manufacturing.
TABLE 29-15: INTERNAL VOLTAGE REGULATOR SPECIFICATIONS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤TA ≤+85°C for Industrial
-40°C ≤TA ≤+105°C for V-Temp
DC CHARACTERISTICS
Param.
No.
Symbol
Characteristics
Min.
Typical
Max.
Units
Comments
D320
VCORE
Regulator Output Voltage
1.62
1.80
1.98
V
—
D321
CEFC
External Filter Capacitor Value
8
10
—
μF
Capacitor must be low series
resistance (< 1 Ohm)
D322
TPWRT
Power-up Timer Period
—
64
—
ms
ENVREG = 0
DS61143H-page 160
© 2011 Microchip Technology Inc.
PIC32MX3XX/4XX
29.2
AC Characteristics and Timing
Parameters
The information contained in this section defines
PIC32MX3XX/4XX AC characteristics and timing
parameters.
FIGURE 29-1:
LOAD CONDITIONS FOR DEVICE TIMING SPECIFICATIONS
Load Condition 1 – for all pins except OSC2
Load Condition 2 – for OSC2
VDD/2
CL
Pin
RL
VSS
CL
Pin
RL = 464Ω
CL = 50 pF for all pins
50 pF for OSC2 pin (EC mode)
VSS
TABLE 29-16: CAPACITIVE LOADING REQUIREMENTS ON OUTPUT PINS
AC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤TA ≤+85°C for Industrial
-40°C ≤TA ≤+105°C for V-Temp
Param.
Symbol
No.
Min.
Typical(1)
Characteristics
Max.
Units
Conditions
DO56
CIO
All I/O pins and OSC2
—
—
50
pF
EC mode
DO58
CB
SCLx, SDAx
—
—
400
pF
In I2C™ mode
Note 1:
Data in “Typical” column is at 3.3V, 25°C unless otherwise stated. Parameters are for design guidance only
and are not tested.
FIGURE 29-2:
EXTERNAL CLOCK TIMING
OS20
OS30
OS31
OSC1
OS30
© 2011 Microchip Technology Inc.
OS31
DS61143H-page 161
GP2Y0A02YK0F
GP2Y0A02YK0F
Distance Measuring Sensor Unit
Measuring distance: 20 to 150 cm
Analog output type
■Description
■Agency approvals/Compliance
GP2Y0A02YK0F is a distance measuring sensor unit,
composed of an integrated combination of PSD
(position sensitive detector) , IRED (infrared emitting
diode) and signal processing circuit.
The variety of the reflectivity of the object, the
environmental temperature and the operating duration
are not influenced easily to the distance detection
because of adopting the triangulation method.
This device outputs the voltage corresponding to the
detection distance. So this sensor can also be used as
a proximity sensor.
■Features
1. Compliant with RoHS directive (2002/95/EC)
■Applications
1. Touch-less switch
(Sanitary equipment, Control of illumination, etc. )
2. Sensor for energy saving
(ATM, Copier, Vending machine, Laptop computer,
LCD monitor)
3. Amusement equipment
(Robot, Arcade game machine)
1. Distance measuring range : 20 to 150 cm
2. Analog output type
3. Package size : 29.5×13×21.6 mm
4. Consumption current : Typ. 33 mA
5. Supply voltage : 4.5 to 5.5 V
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Sheet No.: E4-A00101EN
Date Dec.01.2006
1
©SHARP Corporation
GP2Y0A02YK0F
■Block diagram
③VCC
②GND
Signal
processing circuit
Voltage regulator
PSD
Oscillation circuit
LED drive circuit
①VO
Output circuit
LED
Distance measuring IC
■Outline Dimensions
(Unit : mm)
Stamp
Stamp (Example)
Model name
Production month : Jan. to Sep. ; 1 to 9
Oct. ; X, Nov. ; Y, Dec. ; Z
Production year : Last digit of prod. year
Lens case
*
Light emitter side
*
Light detector side
Connector
PWB
Terminal
① Output terminal voltage
② Ground
③ Supply voltage
Note 1. Unspecified tolerances shall be ± 0.3 mm.
Note 2. The connector is made by J.S.T.TRADING COMPANY,LTD. and its part number is S3B-PH.
Note 3. The dimensions in parenthesis are shown for reference.
Note 4. The dimension marked by “*” show a distance from/to the center of an internal optical slit.
Symbol
VO
GND
VCC
Product mass : approx. 4.8g
Sheet No.: E4-A00101EN
2
GP2Y0A02YK0F
■Absolute Maximum Ratings
Parameter
Supply voltage
Output terminal voltage
Operating temperature
Storage temperature
(Ta=25℃,VCC=5V)
Symbol
VCC
VO
Topr
Tstg
Rating
-0.3 to +7
-0.3 to VCC+0.3
-10 to +60
-40 to +70
Unit
V
V
℃
℃
■Electro-optical Characteristics
Parameter
Average supply current
Measuring distance range
Output voltage
Symbol
ICC
ΔL
VO
Output voltage differential
ΔVO
(Ta=25℃,VCC=5V)
Conditions
L=150cm (Note 1)
(Note 1)
L=150cm (Note 1)
Output voltage difference between
L=20cm and L=150cm (Note 1)
MIN.
―
20
0.25
TYP.
33
―
0.4
MAX.
50
150
0.55
Unit
mA
cm
V
1.8
2.05
2.3
V
* L : Distance to reflective object
Note 1 : Using reflective object : White paper (Made by Kodak Co., Ltd. gray cards R-27・white face, reflectance; 90%)
■Recommended operating conditions
Parameter
Supply voltage
Symbol
VCC
Conditions
Rating
4.5 to 5.5
Unit
V
Sheet No.: E4-A00101EN
3
GP2Y0A02YK0F
Fig. 1 Timing chart
Vcc(Power supply)
38.3ms±9.6ms
Distance measuring operating
Vo(Output)
First measurement
Unstable output
Second
measurement
First output
nth
measurement
Second output
nth
output
MAX 5.0ms
Sheet No.: E4-A00101EN
4
GP2Y0A02YK0F
Fig. 2 Example of distance measuring characteristics (output)
3
White paper (Reflectance ratio : 90 %)
Output voltage [V]
2.5
Gray paper (reflectance ratio : 18 %)
2
1.5
1
0.5
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Distance to reflective object L [cm]
3
15cm
20cm
2.5
Output voltage [V]
10cm
30cm
2
40cm
1.5
50cm
60cm
1
100cm
White paper (Reflectance ratio : 90 %)
0.5
Gray paper (reflectance ratio : 18 %)
150cm
0
0
0.01
0.02
0.03
0.04
0.05 0.06
0.07
0.08
0.09
0.1
Inverse number of distance [1/cm]
Sheet No.: E4-A00101EN
5
GP2Y0A02YK0F
■Notes
●Advice for the optics
• The lens of this device needs to be kept clean. There are cases that dust, water or oil and so on deteriorate
the characteristics of this device. Please consider in actual application.
• Please don’t do washing. Washing may deteriorate the characteristics of optical system and so on.
Please confirm resistance to chemicals under the actual usage since this product has not been designed against washing.
●Advice for the characteristics
• In case that an optical filter is set in front of the emitter and detector portion, the optical filter which has the most
efficient transmittance at the emitting wavelength range of LED for this product (λ = 850 ± 70nm), shall be
recommended to use. Both faces of the filter should be mirror polishing. Also, as there are cases that the characteristics
may not be satisfied according to the distance between the protection cover and this product or the thickness of the
protection cover, please use this product after confirming the operation sufficiently in actual application.
• In case that there is an object near to emitter side of the sensor between sensor and a detecting object, please use this
device after confirming sufficiently that the characteristics of this sensor do not change by the object.
• When the detector is exposed to the direct light from the sun, tungsten lamp and so on, there are cases that it can not
measure the distance exactly. Please consider the design that the detector is not exposed to the direct light from such
light source.
• Distance to a mirror reflector can not be sometimes measured exactly.
In case of changing the mounting angle of this product, it may measure the distance exactly.
• In case that reflective object has boundary line which material or color etc. are excessively different, in order to
decrease deviation of measuring distance, it shall be recommended to set the sensor that the direction of boundary line
and the line between emitter center and detector center are in parallel.
(Incorrect)
(Correct)
• In order to decrease deviation of measuring distance by moving direction of the reflective object, it shall be
recommended to set the sensor that the moving direction of the object and the line between emitter center and
detector center are vertical.
(Incorrect)
(Correct)
(Moving direction)
(Moving direction)
●Advice for the power supply
• In order to stabilize power supply line, we recommend to insert a by-pass capacitor of 10μF or more
between Vcc and GND near this product.
●Notes on handling
• There are some possibilities that the internal components in the sensor may be exposed to the excessive mechanical
stress. Please be careful not to cause any excessive pressure on the sensor package and also on the PCB while
assembling this product.
Sheet No.: E4-A00101EN
6
TIP120/TIP121/TIP122
NPN Epitaxial Darlington Transistor
• Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
Equivalent Circuit
C
B
TO-220
1
1.Base
2.Collector
R1
3.Emitter
R1 @ 8kW
R2 @ 0.12k W
Absolute Maximum Ratings*
Symbol
VCBO
VCEO
R2
E
T a = 25°C unless otherwise noted
Collector-Base Voltage
Parameter
: TIP120
: TIP121
: TIP122
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
Ratings
60
80
100
Units
V
V
V
60
80
100
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
IB
Base Current (DC)
PC
8
A
120
mA
W
Collector Dissipation (Ta=25°C)
2
Collector Dissipation (TC=25°C)
65
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
1
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
October 2008
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
ICEO
Collector Cut-off Current
ICBO
Collector Cut-off Current
Test Condition
IC = 100mA, IB = 0
Min.
Typ.
Max.
60
80
100
Units
V
V
V
: TIP120
: TIP121
: TIP122
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
mA
mA
mA
: TIP120
: TIP121
: TIP122
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
mA
mA
mA
2
mA
2.0
4.0
V
V
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
hFE
* DC Current Gain
VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VBE(on)
* Base-Emitter On Voltage
VCE = 3V, IC = 3A
2.5
V
Cob
Output Capacitance
VCB = 10V, IE = 0, f =
0.1MHz
200
pF
1000
1000
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
2
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10000
hFE, DC CURRENT GAIN
VCE = 4V
1000
100
0.1
1
3.5
IC = 250IB
3.0
2.5
2.0
1.5
1.0
VBE(sat)
VCE (sat)
0.5
0.1
10
IC[A], COLLECTOR CURRENT
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
IC[A], COLLECTOR CURRENT
Cib
10
0.1
1
10
100
1
0.1
0.01
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
s
5m
Cob
s
1m
100
DC
Cob[pF] Cib[pF], CAPACITANCE
s
0m
10 ms
0
50
f=0.1MHz
TIP120
TIP121
TIP122
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
80
PC[W], POWER DISSIPATION
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
3
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
Typical characteristics
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
www.ti.com
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS
Check for Samples: ULN2002A, ULN2003A, ULN2003AI, ULN2004A, ULQ2003A, ULQ2004A
FEATURES
1
•
•
•
•
•
500-mA-Rated Collector Current (Single
Output)
High-Voltage Outputs: 50 V
Output Clamp Diodes
Inputs Compatible With Various Types of
Logic
Relay-Driver Applications
ULN2002A . . . N PACKAGE
ULN2003A . . . D, N, NS, OR PW PACKAGE
ULN2004A . . . D, N, OR NS PACKAGE
ULQ2003A, ULQ2004A . . . D OR N PACKAGE
(TOP VIEW)
1B
2B
3B
4B
5B
6B
7B
E
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
1C
2C
3C
4C
5C
6C
7C
COM
DESCRIPTION
The ULN2002A, ULN2003A, ULN2003AI, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage high-current
Darlington transistor arrays. Each consists of seven npn Darlington pairs that feature high-voltage outputs with
common-cathode clamp diodes for switching inductive loads. The collector-current rating of a single Darlington
pair is 500 mA. The Darlington pairs can be paralleled for higher current capability. Applications include relay
drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers.
For 100-V (otherwise interchangeable) versions of the ULN2003A and ULN2004A, see the SN75468 and
SN75469, respectively.
The ULN2002A is designed specifically for use with 14-V to 25-V PMOS devices. Each input of this device has a
Zener diode and resistor in series to control the input current to a safe limit. The ULN2003A and ULQ2003A have
a 2.7-kΩ series base resistor for each Darlington pair for operation directly with TTL or 5-V CMOS devices. The
ULN2004A and ULQ2004A have a 10.5-kΩ series base resistor to allow operation directly from CMOS devices
that use supply voltages of 6 V to 15 V. The required input current of the ULN/ULQ2004A is below that of the
ULN/ULQ2003A, and the required voltage is less than that required by the ULN2002A.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1976–2013, Texas Instruments Incorporated
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
www.ti.com
ORDERING INFORMATION (1)
PACKAGE (2)
TA
PDIP – N
–20°C to 70°C
SOIC – D
SOP – NS
TSSOP – PW
PDIP – N
ULN2002AN
ULN2003AN
ULN2003AN
ULN2004AN
ULN2004AN
Tube of 40
ULN2003AD
Reel of 2500
ULN2003ADR
Reel of 2500
ULN2003ADRG3
Tube of 40
ULN2004AD
Reel of 2500
ULN2004ADRG3
Reel of 2000
ULN2003A
ULN2003ANSR
ULN2003A
ULN2004ANSR
ULN2004A
Tube of 90
ULN2003APW
Reel of 2000
ULN2003APWR
Tube of 25
ULN2004A
UN2003A
ULQ2003AN
ULQ2003A
ULQ2004AN
ULQ2004AN
Reel of 2500
ULQ2003ADR
Tube of 40
ULQ2004AD
Reel of 2500
ULQ2004ADR
SOP – NS
Reel of 2000
ULN2003AINSR
ULN2003AI
PDIP – N
Tube of 425
ULN2003AIN
ULN2003AIN
Tube of 40
ULN2003AID
Reel of 2500
ULN2003AIDR
Reel of 2500
ULN2003AIPWR
SOIC – D
TSSOP – PW
(2)
ULN2002AN
ULQ2003AD
SOIC – D
(1)
Tube of 25
TOP-SIDE MARKING
Tube of 40
–40°C to 85°C
–40°C to 105°C
ORDERABLE PART NUMBER
ULQ2003A
ULQ2004A
ULN2003AI
UN2003AI
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
LOGIC DIAGRAM
9
COM
1
16
1C
1B
2
15
2C
2B
3
14
3C
3B
4
13
4C
4B
5
12
5C
5B
6
11
6C
6B
7
7B
2
Submit Documentation Feedback
10
7C
Copyright © 1976–2013, Texas Instruments Incorporated
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULN2004A ULQ2003A ULQ2004A
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
www.ti.com
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
SCHEMATICS (EACH DARLINGTON PAIR)
10.5 kW
7.2 kW
3 kW
ULN2002A
RB
ULN/ULQ2003A: RB = 2.7 kW
ULN2003AI: RB = 2.7 kW
7.2 kW
3 kW
ULN/ULQ2004A: RB = 10.5 kW
ULN2003A, ULN2003AI, ULN2004A, ULQ2003A, ULQ2004A
All resistor values shown are nominal.
The collector-emitter diode is a parasitic structure and should not be used to conduct current. If the collector(s) go
below ground an external Schottky diode should be added to clamp negative undershoots.
Copyright © 1976–2013, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULN2004A ULQ2003A ULQ2004A
3
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
www.ti.com
ABSOLUTE MAXIMUM RATINGS (1)
at 25°C free-air temperature (unless otherwise noted)
MIN
VCC
VI
TA
50
V
Clamp diode reverse voltage (2)
50
V
Input voltage (2)
30
V
500
mA
Output clamp current
500
mA
Total emitter-terminal current
–2.5
A
See Figure 14 and
Figure 15
Operating free-air temperature range
Package thermal impedance (3)
θJA
UNIT
Collector-emitter voltage
Peak collector current
IOK
MAX
(4)
–20
70
ULN200xAI
–40
105
ULQ200xA
–40
85
ULQ200xAT
–40
105
D package
73
N package
67
NS package
64
PW package
108
D package
36
N package
54
°C
°C/W
θJC
Package thermal impedance (5)
TJ
Operating virtual junction temperature
150
°C
Lead temperature for 1.6 mm (1/16 inch) from case for 10 seconds
260
°C
150
°C
Tstg
(1)
(2)
(3)
(4)
(5)
(6)
(6)
ULN200xA
Storage temperature range
–65
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
Maximum power dissipation is a function of TJ(max), θJC, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/θJC. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with MIL-STD-883.
ELECTRICAL CHARACTERISTICS
TA = 25°C
PARAMETER
VI(on)
On-state input voltage
TEST
FIGURE
Figure 6
TEST CONDITIONS
ULN2002A
MIN
TYP
MAX
VCE = 2 V,
IC = 300 mA
II = 250 μA,
IC = 100 mA
0.9
1.1
13
II = 350 μA,
IC = 200 mA
1
1.3
II = 500 μA,
IC = 350 mA
1.2
1.6
VCE(sat)
Collector-emitter saturation voltage
Figure 4
VF
Clamp forward voltage
Figure 7
IF = 350 mA
Figure 1
VCE = 50 V,
II = 0
50
Figure 2
VCE = 50 V,
TA = 70°C
II = 0
100
VI = 6 V
500
IC = 500 μA
ICEX
Collector cutoff current
II(off)
Off-state input current
Figure 2
VCE = 50 V,
II
Input current
Figure 3
VI = 17 V
IR
Clamp reverse current
Ci
Input capacitance
4
Submit Documentation Feedback
Figure 6
VR = 50 V
VI = 0,
1.7
50
1.25
100
50
f = 1 MHz
V
V
V
μA
μA
65
0.82
TA = 70°C
2
UNIT
25
mA
μA
pF
Copyright © 1976–2013, Texas Instruments Incorporated
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULN2004A ULQ2003A ULQ2004A
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
www.ti.com
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
ELECTRICAL CHARACTERISTICS
TA = 25°C
PARAMETER
TEST
FIGURE
TEST CONDITIONS
ULN2003A
MIN
TYP
ULN2004A
MAX
MIN
TYP
IC = 125 mA
VI(on)
On-state input voltage
Figure 6
VCE = 2 V
2.4
IC = 250 mA
2.7
6
IC = 275 mA
7
ICEX
Collector cutoff current
8
II = 250 μA,
IC = 100 mA
0.9
1.1
0.9
1.1
II = 350 μA,
IC = 200 mA
1
1.3
1
1.3
II = 500 μA,
IC = 350 mA
1.2
1.6
1.2
1.6
Figure 1
VCE = 50 V,
II = 0
50
50
Figure 2
VCE = 50 V,
TA = 70°C
II = 0
100
100
Figure 5
VF
Clamp forward voltage
Figure 8
IF = 350 mA
II(off)
Off-state input current
Figure 3
VCE = 50 V,
TA = 70°C,
VI = 6 V
50
VI = 3.85 V
II
Input current
Figure 4
2
65
1.7
50
0.93
Clamp reverse current
Ci
Input capacitance
Figure 7
VI = 5 V
VR = 50 V
VI = 0,
μA
TA = 70°C
f = 1 MHz
2
V
μA
65
1.35
VI = 12 V
IR
V
500
1.7
IC = 500 μA
V
3
IC = 350 mA
Collector-emitter
saturation voltage
UNIT
5
IC = 200 mA
IC = 300 mA
VCE(sat)
MAX
15
0.35
0.5
1
1.45
50
50
100
100
25
15
25
mA
μA
pF
ELECTRICAL CHARACTERISTICS
TA = 25°C
PARAMETER
VI(on)
On-state input voltage
TEST FIGURE
Figure 6
ULN2003AI
TEST
CONDITIONS
VCE = 2 V
MIN
TYP
IC = 200 mA
2.4
IC = 250 mA
2.7
IC = 300 mA
VCE(sat)
Collector-emitter saturation voltage
Figure 5
II = 250 μA,
IC = 100 mA
II = 350 μA,
II = 500 μA,
II = 0
ICEX
Collector cutoff current
Figure 1
VCE = 50 V,
VF
Clamp forward voltage
Figure 8
IF = 350 mA
II(off)
Off-state input current
Figure 3
VCE = 50 V,
II
Input current
Figure 4
VI = 3.85 V
IR
Clamp reverse current
Figure 7
VR = 50 V
Ci
Input capacitance
Copyright © 1976–2013, Texas Instruments Incorporated
VI = 0,
MAX
V
3
0.9
1.1
IC = 200 mA
1
1.3
IC = 350 mA
1.2
1.6
50
1.7
IC = 500 μA
UNIT
50
15
V
1.35
mA
50
μA
25
pF
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μA
μA
65
0.93
f = 1 MHz
2
V
5
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
www.ti.com
ELECTRICAL CHARACTERISTICS
TA = –40°C to 105°C
PARAMETER
VI(on)
VCE(sat)
TEST FIGURE
On-state input voltage
Figure 6
Collector-emitter saturation voltage
VCE = 2 V
Figure 5
ULN2003AI
TEST CONDITIONS
MIN
TYP
MAX
IC = 200 mA
2.7
IC = 250 mA
2.9
IC = 300 mA
3
II = 250 μA,
IC = 100 mA
0.9
1.2
II = 350 μA,
IC = 200 mA
1
1.4
II = 500 μA,
IC = 350 mA
1.2
1.7
II = 0
ICEX
Collector cutoff current
Figure 1
VCE = 50 V,
VF
Clamp forward voltage
Figure 8
IF = 350 mA
II(off)
Off-state input current
Figure 3
VCE = 50 V,
II
Input current
Figure 4
VI = 3.85 V
IR
Clamp reverse current
Figure 7
VR = 50 V
Ci
Input capacitance
100
1.7
IC = 500 μA
30
f = 1 MHz
15
V
V
μA
V
μA
65
0.93
VI = 0,
2.2
UNIT
1.35
mA
100
μA
25
pF
ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST
FIGURE
TEST CONDITIONS
ULQ2003A
MIN
TYP
ULQ2004A
MAX
MIN
TYP
IC = 125 mA
VI(on)
On-state input voltage
Figure 6
VCE = 2 V
IC = 200 mA
2.7
IC = 250 mA
2.9
6
IC = 275 mA
7
ICEX
Collector cutoff current
VF
Clamp forward voltage
Figure 5
IC = 100 mA
0.9
1.2
0.9
1.1
II = 350 μA,
IC = 200 mA
1
1.4
1
1.3
1.2
1.7
1.2
1.6
II = 500 μA,
IC = 350 mA
VCE = 50 V,
II = 0
Figure 2
VCE = 50 V,
TA = 70°C
II = 0
Figure 8
IF = 350 mA
VCE = 50 V,
TA = 70°C,
II(off)
Off-state input current
Figure 3
II
Input current
Figure 4
8
II = 250 μA,
Figure 1
100
2.3
65
0.93
1.7
50
Clamp reverse current
Ci
Input capacitance
6
Figure 7
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VR = 50 V
VI = 0,
TA = 25°C
f = 1 MHz
15
2
V
μA
65
1.35
VI = 5 V
VI = 12 V
IR
μA
500
1.7
VI = 3.85 V
V
50
100
VI = 6 V
IC = 500 μA
V
3
IC = 350 mA
Collector-emitter
saturation voltage
UNIT
5
IC = 300 mA
VCE(sat)
MAX
0.35
0.5
1
1.45
100
50
100
100
25
15
25
mA
μA
pF
Copyright © 1976–2013, Texas Instruments Incorporated
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULN2004A ULQ2003A ULQ2004A
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
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SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
SWITCHING CHARACTERISTICS
TA = 25°C
PARAMETER
ULN2002A, ULN2003A,
ULN2004A
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tPLH
Propagation delay time, low- to high-level output
See Figure 9
0.25
1
μs
tPHL
Propagation delay time, high- to low-level output
See Figure 9
0.25
1
μs
VOH
High-level output voltage after switching
VS = 50 V, IO = 300 mA, See Figure 10
VS – 20
mV
SWITCHING CHARACTERISTICS
TA = 25°C
PARAMETER
ULN2003AI
TEST CONDITIONS
MIN
tPLH
Propagation delay time, low- to high-level output
See Figure 9
tPHL
Propagation delay time, high- to low-level output
See Figure 9
VOH
High-level output voltage after switching
VS = 50 V, IO ≈ 300 mA, See Figure 10
TYP
MAX
0.25
1
0.25
1
VS – 20
UNIT
μs
μs
mV
SWITCHING CHARACTERISTICS
TA = –40°C to 105°C
PARAMETER
ULN2003AI
TEST CONDITIONS
MIN
TYP
MAX
tPLH
Propagation delay time, low- to high-level output
See Figure 9
1
10
tPHL
Propagation delay time, high- to low-level output
See Figure 9
1
10
VOH
High-level output voltage after switching
VS = 50 V, IO ≈ 300 mA, See Figure 10
VS – 50
UNIT
μs
μs
mV
SWITCHING CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
ULQ2003A, ULQ2004A
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tPLH
Propagation delay time, low- to high-level output
See Figure 9
1
10
μs
tPHL
Propagation delay time, high- to low-level output
See Figure 9
1
10
μs
VOH
High-level output voltage after switching
VS = 50 V, IO = 300 mA, See Figure 10
Copyright © 1976–2013, Texas Instruments Incorporated
VS – 20
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mV
7
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
www.ti.com
TYPICAL CHARACTERISTICS
VCE(sat)
VCE(sat) - Collector-Emitter Saturation Voltage - V
2.5
TA = 25°C
2
II = 250 µA
II = 350 µA
II = 500 µA
1.5
1
0.5
0
0
100
200
300
400
500
600
700
800
VCE(sat)
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT (ONE DARLINGTON)
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
TOTAL COLLECTOR CURRENT (TWO DARLINGTONS IN
PARALLEL)
2.5
TA = 25°C
II = 350 µA
1.5
II = 500 µA
1
0.5
0
0
100
300
400
500
600
700
Figure 11.
Figure 12.
COLLECTOR CURRENT
vs
INPUT CURRENT
D PACKAGE
MAXIMUM COLLECTOR CURRENT
vs
DUTY CYCLE
800
600
500
IIC
C - Maximum Collector Current - mA
RL = 10 Ω
TA = 25°C
450
IC
IC - Collector Current - mA
200
IC(tot) - Total Collector Current - mA
IC - Collector Current - mA
400
VS = 10 V
350
VS = 8 V
300
250
200
150
100
50
0
500
N=1
400
N=4
N=3
300
N=2
N=6
200 N = 7
N=5
100
TA = 70°C
N = Number of Outputs
Conducting Simultaneously
0
0
25
50
75
100
125
II - Input Current - µA
Figure 13.
10
II = 250 µA
2
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150
175
200
0
10
20
30
40
50
60
70
80
90 100
Duty Cycle - %
Figure 14.
Copyright © 1976–2013, Texas Instruments Incorporated
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULN2004A ULQ2003A ULQ2004A
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
www.ti.com
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
TYPICAL CHARACTERISTICS (continued)
N PACKAGE
MAXIMUM COLLECTOR CURRENT
vs
DUTY CYCLE
MAXIMUM AND TYPICAL INPUT CURRENT
vs
INPUT VOLTAGE
600
2000
TJ = -40°C to 105°C
500
1600
N=1
N=3
N=2
400
N=4
300
N=5
N=6
N=7
Input Current – µA
IIC
C - Maximum Collector Current - mA
1800
200
1400
1200
1000
Maximum
800
600
400
100
0
Typical
TA = 85°C
N = Number of Outputs
Conducting Simultaneously
0
10
20
30
40
50
60
70
200
0
80
2
90 100
2.5
Duty Cycle - %
Figure 15.
3
3.5
4
Input Voltage – V
4.5
5
Figure 16.
MAXIMUM AND TYPICAL SATURATED VCE
vs
OUTPUT CURRENT
MINIMUM OUTPUT CURRENT
vs
INPUT CURRENT
500
2.1
V CE = 2 V
TJ = -40°C to 105°C
TJ = -40°C to 105°C
450
400
Output Current – mA
Maximum VCE(sat) Voltage – V
1.9
1.7
1.5
Maximum
1.3
350
300
250
Minimum
200
1.1
150
Typical
0.9
100
200
300
400
500
100
250
350
450
Output Current – mA
Input Current – µA
Figure 17.
Figure 18.
Copyright © 1976–2013, Texas Instruments Incorporated
550
650
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11
ULN2002A, ULN2003A, ULN2003AI, ULN2004A
ULQ2003A, ULQ2004A
SLRS027M – DECEMBER 1976 – REVISED FEBRUARY 2013
www.ti.com
APPLICATION INFORMATION
ULN2002A
VSS
V
1
P-MOS
Output
ULQ2003A
VCC
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
V
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
Lam
Test
TTL
Output
Figure 19. P-MOS to Load
ULN2004A
ULQ2004A
VDD
Figure 20. TTL to Load
VCC
V
V
ULQ2003A
1
16
1
16
2
15
2
15
3
14
3
14
4
13
4
13
5
12
5
12
6
11
6
11
7
10
7
10
8
9
8
9
RP
CMOS
Output
TTL
Output
Figure 21. Buffer for Higher Current Loads
12
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Figure 22. Use of Pullup Resistors to Increase
Drive Current
Copyright © 1976–2013, Texas Instruments Incorporated
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULN2004A ULQ2003A ULQ2004A
DS3658
www.ti.com
SNLS365B – MARCH 1995 – REVISED APRIL 2013
DS3658 Quad High Current Peripheral Driver
Check for Samples: DS3658
FEATURES
DESCRIPTION
•
•
•
•
The DS3658 quad peripheral driver is designed for
those applications where low operating power, high
breakdown voltage, high output current and low
output ON voltage are required. A unique input circuit
combines TTL compatibility with high impedance. In
fact, its extreme low input current allows it to be
driven directly by a CMOS device.
1
2
•
•
•
•
•
•
•
•
•
•
•
•
•
Single Saturated Transistor Outputs
Low Standby Power, 10 mW Typical
High Impedance TTL Compatible Inputs
Outputs May Be Tied Together for Increased
Current Capacity
High Output Current
– 600 mA Per Output
– 2.4A Per Package
No Output Latch-up at 35V
Low Output ON Voltage (350 mV typ @ 600
mA)
High Breakdown Voltage (70V)
Open Collector Outputs
Output Clamp Diodes for Inductive Fly Back
Protection
NPN Inputs for Minimal Input Currents (1 µA
Typical)
Low Operating Power
Standard 5V Power Supply
Power Up/Down Protection
Fail Safe Operation
2W Power Package
Pin-for-Pin Compatible with SN75437
The outputs are capable of sinking 600 mA each and
offer a 70V breakdown. However, for inductive loads
the output should be clamped to 35V or less to avoid
latch-up during turn off (inductive fly back
protection—refer to AN-213 'SNOA610'). An on-chip
clamp diode capable of handling 800 mA is provided
at each output for this purpose. In addition, the
DS3658 incorporates circuitry that specifies glitchfree power up or down operation and a fail-safe
feature which puts the output in a high impedance
state when the input is open.
The PDIP package is specifically constructed to allow
increased power dissipation over conventional
packages. The four ground pins are directly
connected to the device chip with a special cooper
lead frame. When the quad driver is soldered into a
PC board, the power rating of the device improves
significantly.
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
Relay Drivers
Lamp Drivers
Solenoid Drivers
Hammer Drivers
Stepping Motor Drivers
Triac Drivers
LED Drivers
High Current, High Voltage Drivers
Level Translators
Fiber Optic LED Drivers
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1995–2013, Texas Instruments Incorporated
DS3658
SNLS365B – MARCH 1995 – REVISED APRIL 2013
www.ti.com
Connection Diagram
Figure 1. PDIP- Top View
See Package Number NFG0016E
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
Supply Voltage
7V
Input Voltage
15V
Output Voltage
70V
Output Current
Continuous Power Dissipation @ 25°C Free-Air
1.5A
(3)
2075 mW
−65°C to +150°C
Storage Temperature Range
Lead Temperature (Soldering, 4 sec.)
(1)
(2)
(3)
260°C
“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be specified. They are not meant to imply
that the device should be operated at these limits. Electrical Characteristics provides conditions for actual device operation.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
For operation over 25° free-air temperature, derate linearly to 1328 mW @ 70°C @ the rate of 16.6 mW/°C.
Operating Conditions
Supply Voltage
Ambient Temperature
2
Min
Max
4.75
5.25
V
0
70
°C
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Units
Copyright © 1995–2013, Texas Instruments Incorporated
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SNLS365B – MARCH 1995 – REVISED APRIL 2013
Electrical Characteristics (1) (2)
Symbol
Parameter
Conditions
VIH
Input High Voltage
VIL
Input Low Voltage
IIH
Input High Current
VIN = 5.25V, VCC = 5.25V
IIL
Input Low Current
VIN = 0.4V
VIK
Input Clamp Voltage
VOL
Output Low Voltage
Min
Typ
Max
Units
2.0
V
0.8
V
1.0
1.0
µA
±10
µA
II = −12 mA
−0.8
−1.5
V
IL = 300 mA
0.2
0.4
V
IL = 600 mA
(3)
0.35
0.7
V
100
µA
1.6
V
ICEX
Output Leakage Current
VCE = 70V, VIN = 0.8V
VF
Diode Forward Voltage
IF = 800 mA
IR
Diode Leakage Current
VR = 70V
100
µA
ICC
Supply Current
All Inputs High
60
85
mA
All Inputs Low
2
4
mA
(1)
1.0
Unless otherwise specified, min/max limits apply across the 0°C to +70°C temperature range and the 4.75V to 5.25V power supply
range. All typical values are for TA = 25°C and VCC = 5.0V.
All currents into device pins are shown as positive, all currents out of device pins are shown as negative, all voltages are referenced to
ground, unless otherwise specified. All values shown as max or min are so classified on absolute value basis.
All sections of this quad circuit may conduct rated current simultaneously, however, power dissipation averaged over a short interval of
time must fall within specified continuous dissipation ratings.
(2)
(3)
Switching Characteristics (1)
Typ
Max
Units
tPHL
Symbol
Turn On Delay
RL = 60Ω, VL = 30V
226
500
ns
tPLH
Turn Off Delay
RL = 60Ω, VL = 30V
2430
8000
ns
(1)
Parameter
Conditions
Min
Unless otherwise specified, min/max limits apply across the 0°C to +70°C temperature range and the 4.75V to 5.25V power supply
range. All typical values are for TA = 25°C and VCC = 5.0V.
Truth Table (1)
(1)
IN
EN
OUT
H
H
L
L
H
Z
H
L
Z
L
L
Z
H = High state
L = Low state
Z = High impedance state
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DS3658
SNLS365B – MARCH 1995 – REVISED APRIL 2013
www.ti.com
AC Test Circuit
Figure 2.
Switching Waveforms
Figure 3.
Typical Applications
Figure 4. Stepping Motor Driver
4
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Figure 5. Lamp Driver
Copyright © 1995–2013, Texas Instruments Incorporated
Product Folder Links: DS3658
SN5408, SN54LS08, SN54S08
SN7408, SN74LS08, SN74S08
QUADRUPLE 2-INPUT POSITIVE-AND GATES
SDLS033 – DECEMBER 1983 – REVISED MARCH 1988
Copyright  1988, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
SN5408, SN54LS08, SN54S08
SN7408, SN74LS08, SN74S08
QUADRUPLE 2-INPUT POSITIVE-AND GATES
SDLS033 – DECEMBER 1983 – REVISED MARCH 1988
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SN5408, SN54LS08, SN54S08
SN7408, SN74LS08, SN74S08
QUADRUPLE 2-INPUT POSITIVE-AND GATES
SDLS033 – DECEMBER 1983 – REVISED MARCH 1988
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
SN5408, SN54LS08, SN54S08
SN7408, SN74LS08, SN74S08
QUADRUPLE 2-INPUT POSITIVE-AND GATES
SDLS033 – DECEMBER 1983 – REVISED MARCH 1988
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SN5408, SN54LS08, SN54S08
SN7408, SN74LS08, SN74S08
QUADRUPLE 2-INPUT POSITIVE-AND GATES
SDLS033 – DECEMBER 1983 – REVISED MARCH 1988
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
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