Horváth Zsolt József - publikációk
Zsolt József Horváth - publications
Nemzetközi folyóiratok
International journals
G.Stubnya, I.C.Szép, G.Hoffman, Zs.Horváth, P.Tüttő:
Distribution and role of N-H and Si-H bonds in MNOS structures
Rev. Phys. Appl. 13, 679-682, 1978.
Zs.J.Horváth, G.Stubnya, P.Tüttő:
Resistivity measurements on chemically vapour-deposited Si3N4 films
Thin Solid Films 69, L51-54, 1980.
Zs.J.Horváth:
Memory hysteresis measurements on silicon oxynitride films
Solid-State Electron. 23, 1053-1054, 1980.
P.Tüttő, G.Stubnya, Zs.J.Horváth:
Depth inhomogeneity of CVD Si3N4 layers
IEE Proc. Pt.I.: Solid State and Electron Devices 129, 103-104, 1982.
Zs.J.Horváth, I.Gyúró, M.Németh-Sallay, B.Szentpáli, K.Kazi:
GaAs Schottky varactors for linear frequency tuning in X-band
Phys. Stat. Sol. (A) 94, 719-726, 1986.
I.Gyúró, Zs.J.Horváth:
GaAs VPE layers for microwave Schottky tuning varactors
Acta Phys. Hung. 61, 165-168, 1987.
I.Gyúró, L.Dobos, Zs.J.Horváth, E.K.Pál, V.I.Fineberg, R.V.Konakova, Yu.A.Thorik:
SEM investigations of macroscopic crystal defects in GaAs VPE layers
Acta Phys. Hung. 61, 263-266, 1987.
Zs.J.Horváth, P.Tüttő, M.Németh-Sallay, G.Stubnya,
V.I.Fineberg:
Breakdown investigations in MIS and MS structures
Acta Phys. Polonica A, 71, 485-489, 1987.
T.Németh,
I.Gyúró,
A.P.Kovchavcev, G.L.Kurishev, K.O.Plostnikov, I.M.Subbotin, Zs.J.Horváth:
Rezonansnoje tunnelirovanie elektronov v bar'ere Schottky na arsenide gallija
[Resonance tunneling of electrons in GaAs Schottky barrier (in Russian)]
Fiz. Tekhn. Poluprovodnikov 21, 1944-1948, 1987.
Zs.J.Horváth:
Evaluation of the interface state energy distribution from Schottky I-V characteristics
J. Appl. Phys. 63, 976-978, 1988.
1
Zs.J.Horváth:
Comment on "Engineered Schottky barrier diodes for the modification and control of
Schottky barrier heights" [J. Appl. Phys. 61, 5159 (1987)]
J. Appl. Phys., 64, 443-444, 1988.
Zs.J.Horváth:
Domination of the thermionic-field emission in the reverse I-V characteristics of ntype GaAs Schottky contacts
J. Appl. Phys., 64, 6780-6784, 1988.
Zs.J.Horváth:
General interfacial layer expression for the equilibrium Schottky barrier height and its
application to annealed Au-GaAs contacts
Appl. Phys. Lett., 54, 931-933, 1989.
Zs.J.Horváth:
A novel technique for the investigation of interface state energy distribution in
Schottky contacts: evaluation from the I-V characteristics
Mat. Sci. Forum 38-41, 1271-1276, 1989.
Zs.J.Horváth, M.Németh-Sallay, I.Gyúró:
Domination of the thermionic-field emission in the reverse I-V characteristics of ntype GaAs-Cr/Au Schottky junctions
Crystal Properties & Preparation 19-20, 291-294, 1989.
Zs.J.Horváth, M.Németh-Sallay, B.Pécz, E.Jároli:
The effect of the near-interface concentration change on the C-V characteristics of
GaAs Schottky contacts
Crystal Properties & Preparation 19-20, 299-302, 1989.
K.Kazi, B.Pődör, Zs.J.Horváth, L.Tajti, Á.Fogt:
Effect of varactor bonding and package parameters on the performance of Gunnoscillators
Crystal Properties & Preparation 19-20, 311-314, 1989.
Zs.J.Horváth, I.Gyúró, M.Németh-Sallay, P.Tüttő:
Near-interface concentration reduction in n-type Au/Cr/GaAs Schottky contacts
Vacuum, 40, 201-203, 1990.
Zs.J.Horváth:
The effect of the metal-semiconductor interface on the barrier height in GaAs
Schottky junctions
Vacuum, 41, 804-806, 1990.
Zs.J.Horváth:
Two-phase structure of plasma-polymerized thiophene-passivated GaAs Schottky-like
metal-insulator-semiconductor diodes
J. Appl. Phys. 68, 5899-5901, 1990.
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Zs.J.Horváth:
New electrical characterization of the metal-semiconductor interface in GaAs
Schottky junctions
Acta Phys. Polonica A, 79, 167-170, 1991.
Zs.J.Horváth, B.Kovács, M.Németh-Sallay, B.Pécz:
Electrophysical parameters of the metal-semiconductor interface in MBE and VPE
grown GaAs Schottky contacts
Mat. Sci. Forum, 69, 99-100, 1991.
B.Pécz, G.Radnóczi, Zs.J.Horváth, P.B.Barna, E.Jároli, J.Gyulai:
The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts
J. Appl. Phys., 71, 3408-3413, 1992.
Zs.J.Horváth, G.Molnár, B.Kovács, G.Pető, M.Andrási, B.Szentpáli:
Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si
Schottky junctions
J. Crystal Growth, 126, 163-167, 1993.
Zs.J.Horváth:
Effect of ion-bombardment on apparent barrier height in GaAs Schottky junctions
Acta Phys. Hung., 74, 57-64, 1994.
Zs.J.Horváth, B.Pécz, E.Jároli, M.Németh-Sallay:
Electrical behaviour of ion-mixed Au/n-GaAs contacts
Acta Phys. Hung., 74, 65-71, 1994.
Zs.J.Horváth:
Comment on "Current-voltage characteristics and interface state density of GaAs
Schottky barrier" [Appl. Phys. Lett. 62, 2560 (1993)]
Appl. Phys. Lett. 65, 511-512, 1994.
Zs.J.Horváth, A.Bosacchi, S.Franchi, E.Gombia, R.Mosca, A.Motta:
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs Schottky junctions
Mat. Sci. Eng. B28, 429-432, 1994.
M.Ádám, Zs.J.Horváth, I.Bársony, L.Szölgyémy, E.Vázsonyi, Vo Van Tuyen:
Investigation of electrical properties of Au/porous Si/Si structures
Thin Solid Films, 255, 266-268, 1995.
Zs.J.Horváth, Vo Van Tuyen:
Comment on "Influence of barrier height distribution on the parameters of Schottky
diodes" [Appl. Phys. Lett. 65, 575 (1994)]
Appl. Phys. Lett., 66, 3068, 1995.
Zs.J.Horváth, A.Bosacchi, S.Franchi, E.Gombia, R.Mosca, D.Biondelli:
Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the
composition of undoped AlxGa1-xAs cap layer
Vacuum, 46, 959-961, 1995.
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Zs.J.Horváth:
Lateral distribution of Schottky barrier height: a theoretical approach
Vacuum, 46, 963-966, 1995.
B.Kovács, G.Molnár, L.Dózsa, G.Pető, M.Andrási, J.Karányi, Zs.J.Horváth:
Current-voltage anomalies in polycrystalline GdSi2/p-Si Schottky junctions due to
grain boundaries
Vacuum, 46, 983-985, 1995.
Zs.J.Horváth:
Comment on "Breakdown Voltage of High-Voltage GaAs Schottky Diodes"
Solid-State Electron., 38, 1835-1836, 1995.
Zs.J.Horváth:
Comment on "Analysis of I-V measurements on CrSi2-Si Schottky structures in a
wide temperature range"
Solid-State Electron., 39, 176-178, 1996.
Zs.J.Horváth, M.Ádám, Cs.Dücső, I.Pintér, Vo Van Tuyen, I.Bársony, E.Gombia,
R.Mosca, Zs.Makaró:
Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma
immersion implantation
Solid-State Electron., 42, 221-228, 1998.
J.Ivanco, Zs.J.Horváth, Vo Van Tuyen, C.Coluzza, J.Almeida, A.Terrasi, B.Pécz,
Gy.Vincze G.Margaritondo:
Electrical characterisation of Au/SiOx/n-GaAs junctions
Solid-State Electron., 42, 229-233, 1998.
Zs.J.Horváth, M.Ádám, I.Pintér, B.Cvikl, D.Korosak, T.Mrdjen, Vo Van Tuyen,
Zs.Makaró, Cs.Dücső, I.Bársony:
Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky
junctions
Vacuum, 50, 385-393, 1998.
B.Cvikl, D.Korosak and Zs.J.Horváth:
Comparative study of I-V characteristics of ICB deposited Ag/p-Si(100) and Ag/nSi(111) Schottky junctions
Vacuum, 50, .417-419, 1998.
Zs.J Horváth, E.Gombia, D.Pal, Cs.Kovacsics, G.Capannese, I.Pintér, M.Ádám,
R.Mosca, Vo Van Tuyen, L.Dózsa:
Effect of defect bands on the electrical characteristics of irradiated GaAs and Si
Phys. Stat. Sol. (A), 171, 311-317, 1999.
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Zs.J.Horváth, L.Dózsa, Vo Van Tuyen, B.Pődör, Á.Nemcsics, P.Frigeri, E.Gombia,
R.Mosca, S.Franchi:
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot
structures
Thin Solid Films, 367, 89-92, 2000.
L.Dózsa, Zs.J.Horváth, Vo Van Tuyen, B.Pődör, T.Mohácsy, S.Franchi, P.Frigeri,
E.Gombia, R.Mosca:
The effect of InAs quantum layers and quantum dots on the electrical characteristics
of GaAs structures
Microelectronic Engineering, 51-52, 85-92, 2000.
L.Dózsa, Zs.J.Horváth, G.L.Molnár, G.Pető, C.A.Dimitriadis, L.Papadimitriou,
J.Brini, G.Kamarinos:
Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n
type Si
Semicond. Sci. Technol. 15, 653-657, 2000.
Zs. J.Horváth, V.P.Makhniy, M.V.Demych, Vo Van Tuyen, J Balázs, I.Réti,
P.M.Gorley, K.S.Ulyanitsky, P.P. Horley, D.Stifter, H.Sitter, L.Dózsa:
Electrical and photoelectrical behaviour of CdTe structures
Mater. Sci. Engng. B, 80, 156-159, 2001.
Zs.J.Horváth, Vo Van Tuyen, S.Franchi, A.Bosacchi, P.Frigeri, E.Gombia, R.Mosca,
D.Pal, I.Kalmár, B.Szentpáli:
Engineered Schottky barriers on n-In0.35Ga0.65As
Mater. Sci. Engng. B, 80, 248-251, 2001.
Zs.J.Horváth, M.Ádám, P.Godio, G.Borionetti, I.Szabó, E.Gombia, Vo Van Tuyen:
Passivation of Al/Si interface with chemical treatment: Schottky barrier height and
plasma etch induced defects
Solid-State Phenomena, 82-84, 255-258, 2002.
Zs.J.Horváth, S.Franchi, A.Bosacchi, P.Frigeri, E.Gombia, R.Mosca, Vo Van Tuyen:
Defect related current instabilities in InAs/GaAs and AlGaAs/GaAs structures?
Solid-State Phenomena, 82-84, 565-567, 2002.
Zs.J.Horváth, P.Frigeri, S.Franchi, Vo Van Tuyen, E.Gombia, R.Mosca, L.Dózsa:
Current instabilities in GaAs/InAs self-aggregated quantum dot structures
Appl. Surf. Sci., 190, 222-225, 2002.
Zs.J.Horváth, K. Jarrendähl, M.Ádám, I.Szabó, Vo Van Tuyen, Zs.Czigány:
Electrical peculiarities in Al/Si/Ge/.../Ge/Si and Al/SiGe/Si structures
Appl. Surf. Sci., 190, 403-407, 2002.
Zs.J.Horváth, M.Ádám, I.Szabó, M.Serényi, Vo Van Tuyen:
Modification of Al/Si interface and Schottky barrier height with chemical treatment
Appl. Surf. Sci., 190, 441-444, 2002.
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N.L.Dmitruk, O.Yu.Borkovskaya, I.N.Dmitruk, S.V.Mamykin, Zs.J.Horváth,
I.B.Mamontova:
Morphology and interfacial properties of microrelief metal/semiconductor interface
Appl. Surf. Sci., 190, 455-460, 2002.
P.M.Gorley., M.V.Demych, V.P.Makhniy, Zs.J.Horváth, V.A.Shenderovskii:
Current flow mechanisms in p-i-n structures on the base of cadmium telluride
Semiconductor Physics, Quantum Electronics and Optoelectronics, 5, 46-50, 2002.
L.K. Orlov, Z.J.Horvath, N.L.Ivina, V.I.Vdovin, E.A. Steinman, M.L. Orlov, Y.A.
Romanov:
Multilayer strained Si/SiGe structures: fabrication problems, interface characteristics,
and physical properties
Opto-Electronics Review, 11, 169-174, 2003.
E. M. Pashaev, S. N. Yakunin, A. A. Zaitsev, V. G. Mokerov, Yu. V. Fedorov, Zs. J.
Horváth, R. M. Imamov:
InAs quantum dots in multilayer GaAs-based heterostructures
Phys. Stat. Sol. (A), 195, 204-208, 2003.
Yu. M. Ivanov, V. M. Kanevsky, V. F. Dvoryankin, V. V. Artemov, A. N. Polyakov,
A. A. Kudryashov, E. M. Pashaev, Zs. J. Horváth:
The possibilities of using semi-insulating CdTe crystals as detecting material for Xray imaging radiography
Phys. Stat. Sol. (C), 0, 840-844, 2003.
Yu. M. Ivanov, A. N. Polyakov, V. M. Kanevsky, E.M. Pashaev, Zs. J. Horváth:
Detection of polymorphous transformations in CdTe by dilatometry
Phys. Stat. Sol. (C), 0, 889-892, 2003.
E. M. Pashaev, V. N. Peregudov, S. N. Yakunin, A. A. Zaitsev, T. G. Kolesnikova,
Zs. J. Horváth:
The effect of X-ray radiation on the structural and electrical properties of CdZnTe
solid solution
Phys. Stat. Sol. (C), 0, 897-901, 2003.
Zs. J. Horváth, V. Rakovics, B. Szentpáli, S. Püspöki:
Schottky junctions on n-type InP for zero bias microwave detectors
Phys. Stat. Sol. (C), 0, 916-921, 2003;
N.L.Dmitruk, O.Yu.Borkovskaya, Zs.J.Horváth, I.B.Mamontova, S.V.Mamykin:
Fluctuation model for rough metal/semiconductor interface
Phys. Stat. Sol. (C), 0, 933-938, 2003.
L. Dózsa, Zs. J. Horváth, P. Hubik, J. Kristofik, J. J. Mares, E. Gombia, P. Frigeri, R.
Mosca, S. Franchi, B. Pécz, L. Dobos:
Investigation of defects created by growth of InAs quantum dots in GaAs
Phys. Stat. Sol. (C), 0, 975-980, 2003.
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V. P. Makhniy, V. V. Mel'nyk, I. V. Tkachenko, P. N. Gorley, Zs. J. Horváth, P. P.
Horley, Yu. V. Vorobiev:
Electrical properties of UV detectors based on zinc selenide with modified surface
barrier
Phys. Stat. Sol. (C), 0, 1039-1043, 2003.
Zs. J. Horváth, M. Serényi, M. Ádám, I. Szabó, E. Badaljan, V. Rakovics:
Al/a-SiGe:H/c-Si m-i-p diodes - a new type of heterodevices
Phys. Stat. Sol. (C), 0, 1066-1069, 2003;
Zs. J. Horváth, V. Rakovics, B. Szentpáli, S. Püspöki, K. Žïánský:
InP Schottky junctions for zero bias detector diodes
Vacuum, 71, 113-116, 2003.
Zs. J. Horváth, M. Ádám, I. Szabó, L. K. Orlov, A. V. Potapov, V.A. Tolomasov:
Electrical behaviour of Al/SiGe/Si heterostructures: Effect of surface treatment and
dislocations
Appl. Surf. Sci., 234, 54-59, 2004.
L. Dózsa, G. Molnár, Zs. J. Horváth, A. L. Tóth, J. Gyulai, V. Raineri, F. Giannazzo:
Investigation of the morphology and electrical characteristics of FeSi2 quantum dots
on silicon
Appl. Surf. Sci., 234, 60-66, 2004.
Zs. J. Horváth, L. Dózsa, O. H. Krafcsik, T. Mohácsy, Gy. Vida:
Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals
Appl. Surf. Sci., 234, 67-71, 2004.
J. Osvald, Zs. J. Horváth:
Theoretical study of the temperature dependence of electrical characteristics of
Schottky diodes with an inverse near-surface layer
Appl. Surf. Sci., 234, 349-354, 2004.
L. Dózsa, A. L. Tóth, Zs. J. Horváth, P. Hubik, J. Kristofik, J. J. Mares, E. Gombia, R.
Mosca, S. Franchi, P. Frigeri:
Lateral conductivity in GaAs/InAs quantum dot structures
Eur. Phys. J. Appl. Phys., 27, 93-95, 2004.
Zs. J. Horváth, L. K. Orlov, V. Rakovics, N. L. Ivina, A. L. Tóth, E. S. Demidov, F.
Riesz, V. I. Vdovin:
Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial
structures
Eur. Phys. J. Appl. Phys., 27, 189-192, 2004.
Zs. J. Horvath, A. L. Toth, V. Rakovics, Z. Paszti, G. Peto:
Crystal defects in epitaxial InP layers - electrical and scanning electron microscope
study
Functional Materials, 11, 376-380, 2004.
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Zs. J. Horvath, L. K. Orlov, N. L. Ivina, E. S. Demidov, V. I. Vdovin, M. Adam, I.
Szabo, L. Dozsa, E. M. Pashaev, Yu. M. Ivanov, S. N. Yakunin:
Effect of dislocations in relaxed MBE SiGe layers on the electrical behaviour of
SiGe/Si heterostuctures
Functional Materials, 11, 381-385, 2004.
L. K. Orlov, Zs. J. Horváth, A. V. Potapov, M. L. Orlov, S. V. Ivin, V. I. Vdovin, E.
A. Steinman, V. M. Fomin:
Electrical characteristics and the energy band diagram of the isotype n-Si1-xGex/n-Si
heterojunction in relaxed structures (in Russian)
Fizika Tverdogo Tela, 46, 2069-2075, 2004;
English translation: Physics of the Solid State, 46, 2139-2145, 2004.
L. Dózsa, Zs. J. Horváth, E. Gombia, R. Mosca, S. Franchi, P. Frigeri, V. Raineri, F.
Giannazzo:
Instability of the electrical characteristics of GaAs/InAs quantum dot structures
Phys. Stat. Sol. (C), 2, 1343-1346, 2005.
Zs. J. Horváth, E. Ayyildiz, V. Rakovics, H. Cetin, B. Pődör:
Schottky contacts to InP
Phys. Stat. Sol. (C), 2, 1423-1427, 2005.
Zs. J.Horváth, M. Serényi, M. Ádám, I. Szabó, V. Rakovics, P. Turmezei, Z. Zolnai,
N. Q. Khan:
Electrical behaviour of sputtered Al/SiGe/Si structures
Acta Phys. Slovaca, 55, 241-245, 2005.
L. K. Orlov, N. L. Ivina, A.V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J.
Horvath:
Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE
and demonstration of a Si/SiGe interface blurring in electrical characteristics of
heterostructures
Microel. J., 36, 518-521, 2005.
G. Pető, G. Molnár, L. Dózsa, Z. E. Horváth, Zs. J. Horváth, E. Zsoldos, C. A.
Dimitriadis, L. Papadimitriou:
Thickness dependent formation and properties of GdSi2/Si(100) interfaces
Appl. Phys. A, 81, 975-980, 2005.
E. Ayyildiz, H. Cetin, Zs. J. Horváth:
Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes
Appl. Surf. Sci., 252, 1153-1158, 2005.
Zs. J. Horváth:
Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of
related silicon based MIS devices
Current Appl. Phys., 6, (2) 145-148, 2006.
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P. Szöllősi, P. Basa, Cs. Dücső, B. Máté, M. Ádám, T. Lohner, P. Petrik, B. Pécz, L.
Tóth, L. Dobos, L. Dózsa, Zs. J. Horváth:
Electrical and optical properties of Si-rich SiNx layers: Effect of annealing
Current Appl. Phys., 6, (2) 179-181, 2006.
Zs. J. Horváth:
Electrical pecularities in GaAs and Si based low dimensional structures
Current Appl. Phys., 6, (2) 205-211, 2006.
L. Dobos, B. Pécz, L. Tóth, Zs. J. Horváth, Z. E. Horváth, A. Tóth, E. Horváth, B.
Beaumont, Z. Bougrioua:
Metal contacts to n-GaN
Appl. Surf. Sci., 253, 655-661, 2006.
V. Rakovics, Zs. J. Horváth, Z. E. Horváth, I. Bársony, C. Frigeri, T. Besagni:
Investigation of CdS/InP heterojunction prepared by chemical bath deposition
Phys. Stat. Sol. (C), 4, 1490–1493, 2007.
O. Yu. Borkovskaya, N. L. Dmitruk, Zs. J. Horváth, I. B. Mamontova, A. V. Sukach:
Diffused p-n GaAs junctions with nano/microrelief active interface
Phys. Stat. Sol. (C) 4, 1523–1526, 2007.
P. Basa, Zs.J. Horváth, T. Jászi, A.E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllösi
Electrical and memory properties of silicon nitride structures with embedded Si
nanocrystals
Phys. E, 38, 71–75, 2007.
D.L. Wainstein, A.I. Kovalev, Cs. Ducso, T. Jaszi, P. Basa, Zs.J. Horvath, T. Lohner,
P. Petrik:
X-ray photoelectron spectroscopy investigations of Si in non-stoichiometric SiNx
LPCVD multilayered coatings
Phys. E, 38, 156–159, 2007.
A. I. Kovalev, D. L. Wainstein, D. I. Tetelbaum, A. N. Mikhailov, Y. Golan, Y.
Lifshitz, A. Berman, P. Basa, Zs. J. Horvath:
Electron spectroscopy investigations of semiconductor nanocrystals formed by various
technologies
Int. J. Nanoparticles, 1, 14-31, 2008.
M. Shandalov, J. P. Makai, J. Balazs, Zs. J. Horvath, N. Gutman, A. Sa'ar, Y. Golan:
Optical properties of size quantized PbSe films chemically deposited on GaAs
Eur. Phys. J. Appl. Phys., 41, 75-80, 2008.
L. K. Orlov, Z. J. Horvath, M. L. Orlov, A. T. Lonchakov, N. L. Ivina, L. Dobos:
Anomalous electrical properties of Si/Si1–xGex heterostructures with an electron
transport channel in Si layers
Physics of the Solid State, 50, (2), 330–340, 2008.
Original Russian Text: Fizika Tverdogo Tela, 50, (2), 317–327, 2008.
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Zs. J. Horváth, P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllősi, K.
Nagy:
Electrical and memory properties of Si3N4 MIS structures with embedded Si
nanocrystals
J. Nanosci. Nanotechnol., 8, 812–817, 2008.
P. Basa, Gy. Molnár, L. Dobos, B. Pécz, L. Tóth, A. L. Tóth, A. A. Koós, L. Dózsa,
Á. Nemcsics, Zs. J. Horváth
Formation of Ge nanocrystals in SiO2 by electron beam evaporation
J. Nanosci. Nanotechnol., 8, 818–822, 2008.
Zs. J. Horváth, V. Hardy:
Simulation of memory behaviour of non-volatile structures
J. Nanosci. Nanotechnol., 8, 834–840, 2008.
P. Basa, A. S. Alagoz, T. Lohner, M. Kulakci, R. Turan, K. Nagy, Zs. J. Horváth:
Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge
nanocrystals
Appl. Surf. Sci., 254, 3626-3629, 2008.
S. Levichev, P. Basa, Zs. J. Horváth, A. Chahboun, A. G. Rolo, N. P. Barradas, E.
Alves, M. J. M. Gomes:
Memory effect on CdSe nanocrystals embedded in SiO2 matrix
Solid State Commun., 148, 105–108, 2008.
L. Dobos, B. Pécz, L. Tóth, Zs.J. Horváth, Z.E. Horváth, B. Beaumont, Z. Bougrioua:
Sructural and electrical properties of Au and Ti/Au contacts to n-type GaN
Vacuum, 82, 794-798, 2008.
Zs. J. Horváth:
Evaluation of Schottky junction parameters from current-voltage characteristics
exhibiting large excess currents
Appl. Surf. Sci., 255, 743-745, 2008;
S. Levichev, A. Chahboun, P. Basa, A. G. Rolo, N. P. Barradas, E. Alves, Zs. J.
Horvath, O. Conde, M. J. M. Gomes:
Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf
magnetron sputtering
Microelectron. Eng., 85, 2374-2377, 2008.
Zs. J. Horváth, P. Basa:
Nanocrystal non-volatile memory devices
Mater. Sci. Forum, 609, 1-9, 2009.
L. Dobos, B. Pécz, L. Tóth, Zs. J. Horváth, Z. E. Horváth, E. Horváth, A. Tóth, B.
Beaumont, Z. Bougrioua:
Al and Ti/Al contacts to n-GaN
Vacuum 84, 228–230, 2010.
10
Zs. J. Horváth, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pécz:
Electrical behaviour of lateral Al/n-GaN/Al structures
Appl. Surf. Sci., 256, 5614–5617, 2010.
doi:10.1016/j.apsusc.2010.03.031
Zs. J. Horváth, P. Basa, T. Jászi, A. E. Pap, Gy. Molnár, A. I. Kovalev, D. L.
Wainstein, T. Gerlai, P Turmezei:
Silicon nitride based non-volatile memory structures with embedded Si or Ge
nanocrystals
Communications, Scientific Letters of the University of Zilina, 12, No.2, 19-22, 2010.
A. Osherov, J. P. Makai, J. Balazs, Zs. J. Horvath, N. Gutman, A. Sa'ar, Y. Golan:
Tunability of the optical band edge in thin PbS films chemically deposited on
GaAs(100)
J. Phys.: Condens. Matter, 22, 262002, 2010.
A. I. Ievtushenko, G. V. Lashkarev, V. I. Lazorenko, V. A. Karpyna, M. G. Dusheyko,
V. M. Tkach, L. A. Kosyachenko, V. M. Sklyarchuk, O. F. Sklyarchuk, K. A.
Avramenko, V. V. Strelchuk, Zs. J. Horvath:
Effect of nitrogen doping on photoresponsivity of ZnO films
Phys. Stat. Sol. A, 207, 1746–1750, 2010.
Nemzeti folyóiratok
National journals
Horváth Zs., Gyúró I., Némethné Sallay M.:
Az adalékkoncentráció hatása a GaAs-CrAu Schottky-kontaktusok letörési
tulajdonságaira
(The influence of dopant concentration on the breakdown behaviour of GaAs-CrAu
Schottky contacts)
Finommechanika-Mikrotechnika 24, 200,201,219, 1985.
Horváth Zs., Németh T.-né, Gyúró I., Szentpáli B., Kazi K., Szép I:
GaAs-alapú mikrohullámú hangoló varaktorok fejlesztése
(Development of GaAs microwave tuning varactors)
Finommechanika-Mikrotechnika 25, 52-55, 1986.
Horváth Zs., Stubnya Gy., Németh T., Tüttő P., Ponomarenko Ju.:
Alacsonyhőmérsékleten leválasztott szigetelő rétegek letörési vizsgálatai
(Breakdown investigations of dielectric films deposited at low temperatures)
Hiradástechnika 37, 371-374, 1986.
Mojzes I., Kazi K., Tichy-Rács Á., Gyúró I., Horváth Zs.:
Mikrohullámú adó-vevő szerelvény kifejlesztése távmérő berendezésben való
felhasználásra - a mikrohullámú technika alkalmazási példája
(Development of microwave transmitter-receiver setup for application in a distance
measuring instrument - an example of the application of microwave technique)
Finommechanika-Mikrotechnika 26, 161-169, 1987.
11
Pődör B., Horváth Zs., Tajti L.:
Varaktorhangolású Gunn-oszcillátorok analízise
(Analysis of varactor tuned Gunn oscillators)
Finommechanika-Mikrotechnika 26, 186-189, 1987.
Horváth Zs., Gyúró I., Némethné-Sallay M., Szentpáli B., Kazi K., Fogt Á., Dobos L.,
Kolumbán G-né, Tüttő P.:
GaAs alapú Schottky varaktorok mikrohullámú frekvenciahangolásra
(GaAs Schottky varactors for microwave frequency tuning)
Hiradástechnika 38, 543-548, 1987.
Horváth Zs.:
A határfelületi réteg és a határfelületi állapotok hatása a Schottky kontaktusok I-V
karakterisztikájára
(Effect of interfacial layer and interface states on the I-V characteristics of Schottky
contacts)
Finommechanika-Mikrotechnika 26, 355-358, 1987.
R.V.Konakova, E.A.Solov'ev, K.A Ismailov, Yu.A.Tkhorik, M.Dubovinski,
V.I.Fineberg, Zs.Horváth, G.D.Mel'nikov, F.Stofanik:
Metodi izmerenija naprazhenija lavinnogo proboja arsenidogallievih SVCh diodov
[Measurement methods of avalanche breakdown voltage in GaAs microwave diodes
(in Russian)]
Elektrotechn. Cas., 41, 128-132, 1990.
L.Dózsa, Zs.J.Horváth, Vo Van Tuyen, B.Szentpáli:
The electric properties of wafer bonded Si p-n junctions
Romanian J. Information Science and Technol., 3, 17-27, 2000.
Zs.J.Horváth, M.Ádám, Vo Van Tuyen, Cs.Dücső, B.Szentpáli, F.Giacomozzi,
D.Pasquarello, K.Hjort, P.Tüttő:
Electrical study of insulator films for microwave applications
Romanian J. Information Science and Technol., 3, 49-56, 2000.
P.M.Gorley., M.V.Demych, V.P.Makhniy, K.S.Ulyanitsky, Zs.J.Horváth:
Electrical and photoelectrical properties of diodes based on CdxZn1-xTe<Cl> (in
Ukrainian)
Scientific Messenger of Chernivtsi State University: Physics. Electronics - Chernivtsi
State, University, Chernivtsi, 2000, vol.79, pp.30-34.
Basa P., Horváth Zs. J., Jászi T., Molnár Gy., Pap A. E., Dobos L., Tóth L., Pécz B.:
Nem-illékony nanokristályos félvezető memóriák
Híradástechnika, LXII, No. 10, pp.43-46, 2007 .
Konferencia kiadványok
Conference proceedings
Zs.J.Horváth:
Ocenka giszterezisza MNOP elementov pamjatyi
12
[Evaluation of the hysteresis of MNOS memory elements (in Russian)]
Proc. 3rd Int. Sci. Coll. T.U. Ilmenau, Oct. 30 - Nov. 3, 1978, Ilmenau, GDR, C2, 8184.
P.Tüttő, J.Balázs, Zs.J.Horváth:
Surface-state density evaluation problems in MNOS structures
Springer Series in Electrophysics V7, 140-144, 1981.
Zs.J.Horváth, M.Németh-Sallay, P.Tüttő, G.Stubnya:
The influence of film thicknesses on the switching behaviour of the MNOS memory
devices
Proc. Third Microelectronics Conference of Socialist Countries, May 5-7, 1982,
Siófok, Hungary, pp.131-132, 1982.
Zs.J.Horváth, P.Tüttő, M.Németh-Sallay, J.Balázs:
Charge centroid studies in MNOS structures by high-frequency and quasi-static C-V
measurements
Proc. ESSDERC'82, Sept. 13-16, 1982, Munich, FRG, pp.201-202.
Horváth Zs.:
Konstans gammájú Schottky hangoló varaktorok tervezése
(Design of Schottky tuning varactors with a constant gamma value)
3. Mikrohullámú Szeminárium, 1985. jan. 15-16, Budapest, Közl. 321-324
(Proc. 3rd Microwave Workshop, Jan. 15-16, Budapest, pp. 321-324.).
Zs.J.Horváth, I.Gyúró, M.Németh-Sallay:
The influence of dopant concentration on the breakdown behaviour of GaAs-CrAu
Schottky contacts
Proc. Symp. on Electron. Technol., April 16-19, 1985, Budapest, pp.176-182.
Zs.J.Horváth, G.Stubnya, T.Németh, P.Tüttő, Ju.Ponomarenko:
Breakdown investigations of dielectric films deposited at low temperatures
Proc. 6th Symp. on Reliability in Electronics, August 26-30, 1985, Budapest, V1,
pp.356-364.
Zs.J.Horváth, I.Gyúró, M.Németh-Sallay, P.Tüttő, A.Nagy, L.Dózsa, B.Kovács,
E.K.Pál, B.Szentpáli, Á.Fogt, T.Németh, G.Stubnya, Á.Nemcsics:
The effect of dopant concentration on the electrical behaviour of GaAs-CrAu
junctions
Proc. 7th Czechoslovak Conf. on Electronics and Vacuum Physics, Sept. 3-6, 1985,
Bratislava, Czechoslovakia, Pt3, pp.747-753.
Zs.J.Horváth, I.Gyúró, M.Németh-Sallay, B.Szentpáli, K.Kazi, L. Dobos, Á.Fogt, T.
Kolumbán:
GaAs Schottky varactors for microwave frequency tuning
Proc. 8th Coll. on Microwave Communication, August 25-29, 1986, Budapest,
pp.379-380.
13
Zs.J.Horváth, M.Németh-Sallay, I.Gyúró, K.Kazi, B.Szentpáli, Á.Fogt, L.Dobos,
P.Tüttő, T.Kolumbán:
GaAs-CrAu Schottky tuning varactors
Proc. 5th Int. Scientific-Technical Conf. MICROELECTRONICS'86, Oct. 23-25,
1986, Plovdiv, Bulgaria, V3 pp.328-333.
Zs.J.Horváth:
The effect of the interface states on the I-V characteristics of Schottky contacts
Proc. Symp. Electron. Technol., Sept.15-18, 1987, Budapest, V2, pp. 212-217.
K.Kazi, B.Pődör, Zs.Horváth, L.Tajti:
Varactor tuned voltage controlled microwave oscillator for the X-band
Proc. Symp. Electron. Technol., Sept. 15-18, 1987, Budapest, V1, 163-168.
Zs.J.Horváth:
Energy distribution of interface states in GaAs-Cr/Au Schottky contacts obtained from
I-V characteristics
Springer Lecture Notes in Physics, 301, 286-293, 1988.
Zs.J.Horváth:
Effect of the interface states on the I-V behaviour of Schottky contacts
Proc. 5th Int. School on Microwave Physics and Technique, Sept.29-Oct.3, 1987,
Varna, Bulgaria, Ed. A.Spasov, Singapore, World Scientific, pp.376-377.
B.Pődör, L.Tajti, Zs.J.Horváth, K.Kazi:
Analysis of varactor tuned microwave oscillators
Proc. 5th Int. School on Microwave Physics and Technique, Sept.29-Oct.3, 1987,
Varna, Bulgaria, Ed. A.Spasov, Singapore, World Scientific, pp.403-407, 1988.
Zs.J.Horváth, B.Pécz, E.Jároli:
I-V and C-V studies of ion mixed Au/GaAs (100) contacts - effect of the annealing
Proc. 2nd Int. Conf. on Energy Pulse and Particle Beam Modification of Materials,
Sept.7-11, 1987, Dresden, Akademie Verlag, Berlin, pp.360-363, 1988.
Zs.J.Horváth:
Evaluation of the interface state energy distribution from the Schottky I-V
characteristics - problems and possibilities
Proc. 19th Int. Conf. on Physics of Semiconductors, Aug. 15-19, 1988, Warsaw,
Poland, Ed. W.Zawadzki, Institute of Physics, Polish Academy of Sciences, 1988, pp.
673-676.
Zs.J.Horváth:
The effect of the near-interface concentration change on the C-V characteristics of
Schottky contacts
Proc. 19th Int. Conf. on Physics of Semiconductors, Aug. 15-19, 1988, Warsaw,
Poland, Ed. W.Zawadzki, Institute of Physics, Polish Academy of Sciences, 1988, pp.
677-680.
Zs.J.Horváth, B.Pécz, M.Németh-Sallay:
14
The effect of the annealing on the interface state energy distribution and the relative
interfacial layer thickness in GaAs-Au Schottky contacts evaluated from the I-V
characteristics
Proc. 3rd Conf. Phys. & Technol. of GaAs and other Semicond., Nov.28-Dec.2, 1988,
Tatranska Lomnica, Czechoslovakia; published by the Institute of Electrical
Engineering of the Electro-Physical Research Centre, Slovak Academy of Sciences,
Bratislava, pp. 64-67.
Zs.J.Horváth:
The effect of the metal, interface, and semiconductor parameters on the electrical
behaviour of Schottky junctions
Proc. 19th European Solid State Device Research Conference (ESSDERC'89),
Sept.11-14, 1989, Berlin, pp.602-606.
Zs.J.Horváth, J.C.van den Heuvel. R.C.van Oort:
Novel technique for the investigation of metal-semiconductor interface in Schottky
contacts: application to Cr/a-Si:H structures
Proc. Conf. "Non-Crystalline Semiconductors - 89", Sept.18-23, 1989, Uzhgorod,
USSR, Pt.III, pp.166-168.
Zs.J.Horváth:
Physical and technological aspects of anomalous current-voltage characteristics of
Schottky diodes at low temperatures
Proc. Int. Conf. Microelectronics'92, Sept. 21-23, 1992, Warsaw, Poland; SPIE Proc.
Series 1783, 453-461, 1992.
Zs.J.Horváth:
Fast and simple checking methods of the doping concentration in semiconductors
Proc. Int. Conf. Microelectronics'92, Sept. 21-23, 1992, Warsaw, Poland; SPIE Proc.
Series 1783, 514-518, 1992.
G. Pető, G. Molnár, M. Andrási, B.Szentpáli, B. Kovács, and Zs.J. Horváth:
Effect of crystallization on the electrical and interface parameters in GdSi2/p-Si
Schottky junctions
Proc. Third Int. Conf. on Solid State and Integrated Circuit Technology, October 1824, 1992, Beijing, China, pp.611-613, 1992.
B.Pécz, G.Radnóczi, Zs.J.Horváth, P.B.Barna, E.Jároli, J.Gyulai:
The effect of Xe ion beam treatment on the interaction between gold and GaAs
Mat. Res. Soc. Symp. Proc., 260, 293-298, 1992.
Zs.J.Horváth:
A new approch to temperature dependent ideality factors in Schottky contacts
Mat. Res. Soc. Symp. Proc., 260, 359-366, 1992.
Zs.J.Horváth:
Lognormal lateral distribution of barrier height in Au/n-GaAs Schottky junctions?
Mat. Res. Soc. Symp. Proc., 260, 367-372, 1992.
15
Zs.J.Horváth:
Effect of near-interface concentration change on barrier height in ion-bombarded and
heat-treated GaAs Schottky contacts
Mat. Res. Soc. Symp. Proc., 260, 441-446, 1992.
B.Kovács, Zs.J.Horváth, I.Mojzes, G.Molnár, G.Pető, M.Andrási:
Comparative electrical study of epitaxial and polycrystalline GdSi2/(100)p-Si
Schottky barriers
Mat. Res. Soc. Symp. Proc., 260, 697-700, 1992.
Zs.J.Horváth:
The role of the thermionic-field emission in the current transport through Schottky
junctions
Proc. 16th Annual Semicond. Conf. CAS'93, Oct. 12-17, 1993, Sinaia, Romania, pp.
247-250.
Zs.J.Horváth:
Fermi-level pinning at metal/AlGaAs and GaAs/AlGaAs interfaces
Proc. 16th Annual Semicond. Conf. CAS'93, Oct. 12-17, 1993, Sinaia, Romania, pp.
311-313.
B.Kovács, L.Dobos, B.Pécz, Gy.Barcza, Zs.J.Horváth:
Room temperature interaction of the AuGeNi metallization with GaAs
Proc. 4th Int. Conf. on Formation of Semicond. Interfaces, June 14-18, 1993, Jülich,
Germany, Eds. B. Lengeler, H. Lüth, W. Mönch, J. Pollmann, pp. 317-320, 1994.
Zs.J.Horváth, L.Lipták, Vo Van Tuyen, J.Karányi, L.Csontos, B.Szentpáli,
A.Bosacchi, S.Franchi, E.Gombia, R.Mosca, P.Manivannan, A.Subrahmanyam:
Anomalous current transport through AIIIBV Schottky junctions
Proc. 17th Annual Semicond. Conf. CAS'94, Oct. 11-16, 1994, Sinaia, Romania,
Vol.1., pp.353-356.
B.Cvikl, Zs.J.Horváth, T.Mrden:
Investigaion of possible anomalous thermionic-field emission in ICB deposited Ag/nSi(111) junctions
Proc. 23rd Int. Conf. on Microelectronics, MIEL'95, and 31st Symp. on Devices and
Materials, SD'95, Sept. 27-29, 1995, Terme Catez, Slovenia, Ed. I.Sorli, B.Kren,
M.Limpel, MIDEM Society for Microelectronics, Electronic Components and
Materials, Ljubljana, 1995, pp.391-396.
Zs.J.Horváth and L.Dózsa:
Electrical
characteristics
of
epitaxial
Al/AlxGa1-xAs/n-Al0.25Ga0.75As
heterostructures
Proc. 2nd Int. Workshop on Heterostructure Epitaxy and Devices HEAD'95, Oct. 1519, 1995, Smolenice Castle, Slovakia, NATO ASI Series, Eds. J.Novák and
A.Schlachetzki, Kluwer Academic Publisher, London, 1996, pp. 91-94.
Zs.J.Horváth:
Temperature dependence of Schottky barrier height: Role of interface states
16
Proc. 24th Int. Conf. on Microelectronics, MIEL'96, and 32nd Symp. on Devices and
Materials, SD'96, Sept. 25-27, 1996, Nova Gorica, Slovenia, Ed. I.Sorli, S.Amon,
M.Kosec, MIDEM Society for Microelectronics, Electronic Components and
Materials, Ljubljana, 1996, pp.365-370.
Zs.J.Horváth and Vo Van Tuyen:
Possible explanation of inverse T0 effect in Schottky diodes
Proc. 24th Int. Conf. on Microelectronics, MIEL'96, and 32nd Symp. on Devices and
Materials, SD'96, Sept. 25-27, 1996, Nova Gorica, Slovenia, Ed. I.Sorli, S.Amon,
M.Kosec, MIDEM Society for Microelectronics, Electronic Components and
Materials, Ljubljana, 1996, pp.371-376.
Zs.J.Horváth, E.Vázsonyi, M.Ádám, Vo Van Tuyen, and I.Bársony:
Switching effect in n-type gold/porous silicon/silicon structure
Proc. Int. Conf. on Advanced Semiconductor Devices and Microsystems ASDAM'96,
October 20-24, 1996, Smolenice, Slovakia, Eds. T.Lalinsky, F.Dubecky, J.Osvald and
S.Hascík, pp. 77-79.
Zs.J.Horváth, M.Ádám, Cs.Dücső, I.Pintér, Vo Van Tuyen, I.Bársony, E.Gombia and
R.Mosca:
Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared with plasma
immersion implantation
Proc. Int. Conf. on Advanced Semiconductor Devices and Microsystems ASDAM'96,
October 20-24, 1996, Smolenice, Slovakia, Eds. T.Lalinsky, F.Dubecky, J.Osvald and
S.Hascík, pp. 197-200.
J.Ivanco, Zs.J.Horváth, Vo Van Tuyen, C.Coluzza, J.Almeida, A.Terrasi, B.Pécz,
Gy.Vincze and G.Margaritondo:
Electrical characterisation of Au/SiOx/n-GaAs structures
Proc. Int. Conf. on Advanced Semiconductor Devices and Microsystems ASDAM'96,
October 20-24, 1996, Smolenice, Slovakia, Eds. T.Lalinsky, F.Dubecky, J.Osvald and
S.Hascík, pp. 257-261.
Zs.J.Horváth:
Evaluation of the Schottky current-voltage characteristics for thermionic-field
emission
Proc. Int. Conf. on Advanced Semiconductor Devices and Microsystems ASDAM'96,
October 20-24, 1996, Smolenice, Slovakia, Eds. T.Lalinsky, F.Dubecky, J.Osvald and
S.Hascík, pp. 263-267.
Zs.J.Horváth:
Lateral distribution of Schottky barrier height: a numerical simulation
Proc. Int. Conf. on Advanced Semiconductor Devices and Microsystems ASDAM'96,
October 20-24, 1996, Smolenice, Slovakia, Eds. T.Lalinsky, F.Dubecky, J.Osvald and
S.Hascík, pp. 269-272.
B.Cvikl, D.Korosak and Zs.J.Horváth:
Comparative study of I-V characteristics of ICB deposited Ag/p-Si(100) and Ag/nSi(111) Schottky junctions
17
Extended Abstracts of 7th Joint Vacuum Conference of Hungary, Austria, Croatia and
Slovenia, May 26-29, 1997, Debrecen, Hungary, (Ed. S.Bohátka), pp.99-100.
Zs.J.Horváth, M.Ádám, I.Pintér, B.Cvikl, D.Korosak, T.Mrdjen, Vo Van Tuyen,
Zs.Makaró, Cs.Dücső, and I.Bársony:
Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky
junctions
Extended Abstracts of 7th Joint Vacuum Conference of Hungary, Austria, Croatia and
Slovenia, May 26-29, 1997, Debrecen, Hungary, (Ed. S.Bohátka), pp.195-196.
A.Subrahmanyam, N.Balasubramanian, P.Manivannan, Zs.J.Horváth, Vo Van Tuyen,
F.Riesz and M.Rácz:
Electrical characteristics of ITO/InP heterostructures
Extended Abstracts of 7th Joint Vacuum Conference of Hungary, Austria, Croatia and
Slovenia, May 26-29, 1997, Debrecen, Hungary, (Ed. S.Bohátka), pp.197-198.
Zs.J.Horváth, A.Subrahmanyam, N.Balasubramanian, P.Manivannan, J.Karányi,
M.Rácz, and Vo Van Tuyen:
Electrical characteristics of ITO/GaAs and ITO/InP heterojunctions
Proc. 33rd Int. Conf. of Microelectronics, Devices and Materials, Sept. 24-26, 1997,
Gozd Martuljek, Slovenia, (Eds. M. Kosec, S. Amon, I. Sorli, MIDEM, Ljubljana)
pp.275-280.
Zs.J.Horváth:
Electrical characterisation of Schottky junctions: Anomalies, parameter extraction and
barrier height engineering
in: Physics of Semiconductor Devices, Narosa Publishing House, New Delhi, India,
1998, (Eds. V. Kumar, S. K. Agarwal), pp. 1085-1092.
Zs.J.Horváth and Vo Van Tuyen:
Effect of lateral inhomogeneity of barrier height on the photoresponse characteristics
of Schottky junctions
Proc. Int. Conf. on Optical Diagnostics of Materials and Devices for Opto-, Microand Quantum Electronics, May 13-15, 1997, Kiev, Ukraine, Proc. SPIE Vol. 3359, pp.
65-67, 1998.
Zs.J.Horváth, A.I.A.Elsawirki, T.Veres, Vo Van Tuyen, B.Kovács, L.Csontos,
J.Karányi:
Degradation of Al/GaAs and Al/AlGaAs Schottky Junctions at Elevated Temperatures
Informal Proc. 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem
Technology (Eds. V.Székely, K.Tarnay, I.Bársony V. Tímár-Horváth), May 6-8, 1998,
Budapest, Hungary, pp. 92-96.
Zs.J.Horváth:
Possibilities of interface characterisation in Schottky-like junctions by electrical
measurements
The International Workshop on Diagnostics of Solid State Surfaces and Interfaces,
June 24-25, 1998, Bratislava, Slovakia, Book of Abstracts pp. 8-9.
18
Zs.J.Horváth, A.Subrahmanyam, P.Manivannan, N.Balasubramanian, Á.Nemcsics,
J.Karányi, M.Rácz, Vo Van Tuyen:
Electrical and photovoltaic study of ITO/GaAs and ITO/InP heterojunctions
Proc. 2nd World Conf. on Photovoltaic Solar Energy Conversion, July 6-10, 1998,
Vienna, Austria, V.III, pp.3711-3714.
Zs.J.Horváth, M.Ádám, Vo Van Tuyen, Cs.Dücső:
Ultrahigh Al Schottky Barrier to p-Si
Proc. 2nd Int. Conf. on Advanced Semiconductor Devices and Microsystems
ASDAM'98, Oct. 5-7, 1998, Smolenice Castle, Slovakia, Eds. J.Breza, D.Donoval,
V.Drobny and F.Uherek, pp. 83-86.
Zs.J.Horváth, T.Veres, Vo Van Tuyen, B.Kovács, A.I.A.Elsawirki, L.Csontos,
B.Szentpáli:
Thermal Degradation of Al/AlGaAs Schottky Junctions
Proc. 2nd Int. Conf. on Advanced Semiconductor Devices and Microsystems
ASDAM'98, Oct. 5-7, 1998, Smolenice Castle, Slovakia, Eds. J.Breza, D.Donoval,
V.Drobny and F.Uherek, pp. 129-132.
Zs.J.Horváth, E.Gombia, D.Pal, R.Mosca, G.Capannese, L.Dózsa, Vo Van Tuyen:
Effect of neutron bombardment on the electrical characteristics of n-GaAs
in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2000,
(Eds. V. Kumar and S. K. Agarwal), 2000, pp. 230-233.
Zs.J.Horváth, G.Stubnya, P.Tüttő, M.Németh-Sallay, J.Balázs:
Charge injection and storage properties of MNOS structures
in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2000,
(Eds. V. Kumar and S. K. Agarwal), pp. 383-386.
Zs.J.Horváth:
Electrical breakdown in MIS and MS systems
in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2000,
(Eds. V. Kumar and S. K. Agarwal), pp. 760-767.
Zs.JHorváth, M.Ádám, I.Pintér, B.Cvikl, D.Korošak, K.Jarrendahl, E. Gombia,
R.Mosca, P.Godio, G.Borionetti, Vo Van Tuyen, M.Serényi, Zs.Czigány:
Engineered Schottky junctions on p-Si
Workshop on Solid State Surfaces and Interfaces II, SSSI-II, June 20-22, 2000,
Bratislava, Slovakia, Book of Extended Abstracts pp. 54-55.
Zs.J.Horváth, D.Donoval, G.Pető, G.Molnár, Vo Van Tuyen:
Temperature dependent electrical characteristics of silicide/silicon junctions
Proc. Third Int. EuroConf. on Advanced Semiconductor Devices and Microsystems
ASDAM 2000, October 16-18, 2000, Smolenice Castle, Slovakia, Eds. J.Osvald, S.
Hašèik, J.Kuzmik, J.Breza, pp. 39-42.
M.Çakar, M.Saðlam, Y.Onganer, Zs.J.Horváth, A.Türüt:
Current-Voltage and Capacitance-Voltage Characteristics of Metallic Polymer/p-type
Si Schottky Contacts
19
Proc. Third Int. EuroConf. on Advanced Semiconductor Devices and Microsystems
ASDAM 2000, October 16-18, 2000, Smolenice Castle, Slovakia, Eds. J.Osvald, S.
Hašèik, J.Kuzmik, J.Breza, pp. 255-256.
Zs.J.Horváth, O.V.Rengevich, S.V.Mamykin, N.L.Dmitruk,Vo Van Tuyen,
B.Szentpáli, R.V.Konakova, A.E.Belyaev:
Effect of interface roughness and morphology on the electrical behaviour of Au/nGaAs Schottky diodes
Proc. Third Int. EuroConf. on Advanced Semiconductor Devices and Microsystems
ASDAM 2000, October 16-18, 2000, Smolenice Castle, Slovakia, Eds. J.Osvald, S.
Hašèik, J.Kuzmik, J.Breza, pp. 257-259.
Zs.J.Horváth, J.Kumar, L.Dobos, B.Pécz, A.L.Tóth, S.Chand, J.Karányi:
Morphology and electrical behaviour of Pd2Si/p-Si junctions
Proc. Third Int. EuroConf. on Advanced Semiconductor Devices and Microsystems
ASDAM 2000, October 16-18, 2000, Smolenice Castle, Slovakia, Eds. J.Osvald, S.
Hašèik, J.Kuzmik, J.Breza, pp. 261-263.
Zs.J.Horváth, O.V.Rengevich, S.V.Mamykin, N.L.Dmitruk, Vo Van Tuyen:
Effect of surface treatment on the electrical behaviour of Au/n-GaAs Schottky diodes
2nd Workshop on Micromachined Circuits for Microwave and Millimeter Wave
Applications "MEMSWAVE" - II, October 27, 2000, Budapest, Hungary, Extended
Abstracts pp.14-16.
Zs.J.Horváth, B.Pődör, P.Frigeri, S.Franchi, E.Gombia, R.Mosca, Vo Van Tuyen,
L.Dózsa:
Current instabilities in GaAs/InAs quantum dot structures
Proc. Int. Conf. on Solid State Crystals - Materials Science and Applications, October
9-13, 2000, Zakopane, Poland, Proc. SPIE Vol. 4413, pp. 153-156, 2001.
Zs.J.Horváth, V.P.Makhniy, I.Réti, M.V.Demych, Vo Van Tuyen, P.M.Gorley,
JBalázs, K.S.Ulyanitsky, L.Dózsa, P.P.Horley, B.Pődör:
Electrical and photoelectrical behaviour of Au/n-CdTe junctions
Proc. Int. Conf. on Solid State Crystals - Materials Science and Applications, October
9-13, 2000, Zakopane, Poland, Proc. SPIE Vol. 4413, pp. 258-261, 2001.
Zs.J.Horváth, K.Jarrendähl, L.K.Orlov, M.Serényi, M.Ádám, I.Szabó, B.Cvikl,
D.Korošak, E.Pashaev, S.Yakunin, Vo Van Tuyen, Zs.Czigány:
Vertical electrical properties of Al/SiGe/Si structures
Proc. 37th Int. Conf. of Microelectronics, Devices and Materials, Oct. 10-12, 2001,
Bohinj, Slovenia, (Eds. F. Smole, M. Topic, I. Sorli, MIDEM, Ljubljana, 2001)
pp.143-148.
D.Korošak, B.Cvikl, Zs.J.Horváth:
Microscopic origin of excess capacitance of non-ideal Schottky junctions
Proc. 37th Int. Conf. of Microelectronics, Devices and Materials, Oct. 10-12, 2001,
Bohinj, Slovenia, (Eds. F. Smole, M. Topic, I. Sorli, MIDEM, Ljubljana, 2001)
pp.161-165.
20
Zs.J.Horváth:
Vertical electrical behaviour of GaAs and Si based low dimensional structures
in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2002,
(Eds. V. Kumar and P. K. Basu), pp. 265-272.
V.Rakovics, J.Balázs, B.Pődör, A.L.Tóth, Zs.J.Horváth, Z.E.Horváth:
Growth and properties of InxGa1-xAsySb1-y on GaSb
in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi, India, 2002,
(Eds. V. Kumar and P. K. Basu), pp. 1195-1199.
B. Szentpáli, V.Rakovics, Zs.J.Horváth, S.Püspöki:
Development of InP Schottky diodes
in: Micromachined Microwave Devices and Circuits, Romanian Academy Press,
Bucharest, 2002, (Eds. D. Dascalu, H. Hartnagel, R. Plana, A. Müller), pp. 79-84.
Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Al/SiGe/Si structures
Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice
Castle, Slovak Republic, Eds. K. Gmucová, R. Brunner, Comenius University Press,
Bratislava, 2002, pp.23-25.
Zs. J. Horváth, S. Franchi, A. Bosacchi, P. Frigeri, E. Gombia, R. Mosca, Vo Van
Tuyen:
Current instabilities in InAs/GaAs and AlGaAs/GaAs structures
Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice
Castle, Slovak Republic, Eds. K. Gmucová, R. Brunner, Comenius University Press,
Bratislava, 2002, pp.26-28.
Zs. J. Horváth, B. Pődör, J. Balázs, K. Järrendahl, Zs. Czigány, E. Pashaev, S.
Yakunin:
Electrical and optical characterisation of sputtered Si/Ge multilayers and mixed SiGe
layers
Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice
Castle, Slovak Republic, Eds. K. Gmucová, R. Brunner, Comenius University Press,
Bratislava, 2002, pp.29-30.
Zs. J. Horváth, V. Rakovics, Z. Pászti, B. Szentpáli, S. Püspöki, G. Pető:
Electrical properties of InP Schottky junctions
Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice
Castle, Slovak Republic, Eds. K. Gmucová, R. Brunner, Comenius University Press,
Bratislava, 2002, pp.31-34.
Zs. J. Horváth, L. K. Orlov, N. L. Ivina, E. S. Demidov, V. I. Vdovin, M. Ádám, I.
Szabó, E. M. Pashaev, S. N. Yakunin:
Effect of dislocations in relaxed MBE SiGe layers on the electrical behaviour of
heterostuctures
Materials of Int. Scientific-Practical Conf. "Structural Relaxation in Solids", May 1315, 2003, Vinnitsa, Ukraine, pp. 128-129.
21
Zs. J. Horváth, A. L. Tóth, V. Rakovics:
Crystal defects in epitaxial InP layers - electrical and scanning electron microscope
study
Materials of Int. Scientific-Practical Conf. "Structural Relaxation in Solids", May 1315, 2003, Vinnitsa, Ukraine, pp. 129-131.
Zs. J. Horváth, V. Rakovics, Z. Pászti:
InP Schottky structures with Pt nanoparticles
Proc. Int. Conf. on Solid States Crystals - Materials Science and Applications:
Crystalline Materials for Optoelectronics, Oct. 14-18, 2002, Zakopane, Poland; (Ed. J.
Rutkowski, A. Rogalski); SPIE Proc., Vol. 5136, pp. 200-204, 2003.
L. K. Orlov, Z. J. Horvath, N. L. Ivina, V. I. Vdovin, E. A. Steinman, M. L. Orlov, Y.
A. Romanov:
Multilayer strained Si-SiGe structures: fabrication problems, interface characteristics
and physical properties
Proc. Int. Conf. on Solid State Crystals - Materials Science and Applications:
Crystalline Materials for Optoelectronics, Oct. 14-18, 2002, Zakopane, Poland; (Ed. J.
Rutkowski, A. Rogalski); SPIE Proc., Vol. 5136, pp. 211-216, 2003.
Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Si/Ge and SiGe/Si
structures
Proc. 12th Int. Workshop Physics of Semiconductor Devices, Dec. 16-20, 2003,
Madras, India, Narosa Publishing House, New Delhi, 2004, (Eds. K. N. Bath and A.
DasGupta), pp. 89-94.
Zs. J. Horváth:
Vertical electrical behaviour of silicon-based MS and MIS structures
Proc. Int. Conf. Silicon - News in Science and Technology, Febr. 29 - March 3, 2004.
Podbanské, Slovakia, (Eds. S. Jurecka, J. Müllerová), pp.32-39.
Zs. J. Horváth, D. Dücső, T. Lohner, P. Petrik, M. Ádám, B. Szentpáli, M. Fried:
Silicon-rich silicon-nitride films on Silicon: electrical and optical properties
Proc. Int. Conf. Silicon - News in Science and Technology, Febr. 29 - March 3, 2004.
Podbanské, Slovakia, (Eds. S. Jurecka, J. Müllerová), pp. 40-44.
Zs. J. Horváth, G. Molnár, I. Dézsi, M. Caymax, R. Loo, G. Pető:
Erbium silicide on silicon-germanium: electrical behaviour
Proc. Int. Conf. Silicon - News in Science and Technology, Febr. 29 - March 3, 2004.
Podbanské, Slovakia, (Eds. S. Jurecka, J. Müllerová), pp.45-49.
L. K. Orlov, A. V. Potapov, M. L. Orlov, Zs. J. Horvath, E. A Steinman, V. I. Vdovin:
Barrier properties of isotype relaxed n-Si1-xGex/Si heterojunction (in Russian)
Proc. Conf. Nanofotonika, May 2-6, 2004, Nizhniy Novgorod, Russia, pp. 145-148.
Zs. J. Horváth, A. I. A. Elsawirki, Sz. Varga, L. Csontos, J. Karányi, K. Somogyi:
Low temperature metal-semiconductor interaction in Al/n-GaAs and Al/n-AlGaAs
junctions
22
Proc. Fifth Int. Conf. on Advanced Semiconductor Devices and Microsystems
ASDAM '04, Oct. 17–21, 2004, Smolenice, Slovakia, pp. 95-98.
Zs. J. Horváth, K. Järrendahl, M. Serényi, M. Ádám, B. Pődör, J. Balázs, Zs. Czigány:
Electrical and optical behaviour of sputtered amorphous and polycrystalline Si/Ge
multilayers and SiGe layers deposited on monocrystalline Si substrates
Brief Proc. Int. Conf. Solar Renewable Energy News - Research and Applications
2005, SREN 2005, Florence, Italy, April 2-8, 2005, pp.27-29.
Zs. J. Horváth, Z. Lábadi, P. Basa:
Nanocrystal semiconductor structures for electronics, optoelectronics and
photovoltaics
Brief Proc. Int. Conf. Solar Renewable Energy News - Research and Applications
2005, SREN 2005, Florence, Italy, April 2-8, 2005, pp.30-32.
Zs. J. Horváth:
Semiconductor nanocrystals in dielectrics: Memory applications of related silicon
based metal-insulator-semiconductor devices
Proc. Hungarian-Korean Joint Seminar "Engineering Aspects of Nanomaterials and
Technologies", January 24-27, 2005, Budapest, Hungary, (Ed. E. Czoboly), pp.81-85.
P. Basa, P. Szöllõsi, B. Máté, Cs. Dücsõ, M. Ádám, T. Lohner, P. Petrik, B. Pécz, L.
Tóth, L. Dobos, L. Dózsa, Zs. J. Horváth:
Electrical and optical properties of Si-rich silicon nitride layers: Effect of annealing
Proc. Hungarian-Korean Joint Seminar "Engineering Aspects of Nanomaterials and
Technologies", January 24-27, 2005, Budapest, Hungary, (Ed. E. Czoboly), pp.113117.
Zs. J. Horváth, M. Ádám, K. Jarrendähl, Gy. Vida, L. K. Orlov, J. Balázs, L. Dózsa,
O. H. Krafcsik, G. Molnár, B. Pődör, I. Szabó, É. B. Vázsonyi, E. S. Demidov, C. V.
Ivin, N. L. Ivina, A. V. Potapov, V. A. Tolomasov, V. I. Vdovin, P. Basa, A.
Pongrácz, G. Battistig, I. Bársony, Zs. Czigány, Vo Van Tuyen:
Electrical pecularities in Si based low dimensional structures
Proc. Hungarian-Korean Joint Seminar "Engineering Aspects of Nanomaterials and
Technologies", January 24-27, 2005, Budapest, Hungary, (Ed. E. Czoboly), pp.253262.
G. Molnár, L. Dózsa, G. Pető, Cs. S. Daróczi, Zs. J. Horváth, Z. Vértesy, A. A. Koós,
Z. E. Horváth, O. Geszti:
Thickness dependent formation of self-assembled silicide nanostructures on Si(001)
Semiconductor Nanocrystals; Proc. First Int. Workshop on Semiconductor
Nanocrystals SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B.
Pődör, Zs. J. Horváth, P. Basa), Vol.1, pp. 15-18.
Zs. J. Horváth, Cs. Dücső, P. Basa, P. Szöllősi, T. Lohner, P. Petrik, L. Dobos, B.
Pécz, L. Tóth, M. Fried:
Electrical and memory properties of MIS capacitors with annealed Si-rich SiNx layers
23
Semiconductor Nanocrystals; Proc. First Int. Workshop on Semiconductor
Nanocrystals SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B.
Pődör, Zs. J. Horváth, P. Basa), Vol.1, pp. 201-204.
V. P. Makhniy, M. M. Sletov, V. V. Mel`nyk, V. I. Grivul, P. P. Horley, P. N. Gorley,
Zs. J. Horváth:
Luminescence peculiarities of wide-gap II-VI compounds with quantum-size surface
structure
Semiconductor Nanocrystals; Proc. First Int. Workshop on Semiconductor
Nanocrystals SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B.
Pődör, Zs. J. Horváth, P. Basa), Vol.2, pp. 287-289.
L. K. Orlov, Zs. J. Horváth, N. L. Ivina, L. M. Vinogradski, V. B. Shevtsov, M. L.
Orlov, A. S. Lonchakov, L. Dobos:
Peculiarities of the pseudomorphous multilayer SiGe/Si structures with the imperfect
boundaries, showing in electrical measurements
Semiconductor Nanocrystals; Proc. First Int. Workshop on Semiconductor
Nanocrystals SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B.
Pődör, Zs. J. Horváth, P. Basa), Vol.2, pp. 329-332.
Zs. J. Horváth, P. Basa, P. Petrik, Cs. Dücső, T. Jászi, L. Dobos, L. Tóth, T. Lohner,
B. Pécz, M. Fried:
Si nanocrystals in sandwiched SiNx layers
Semiconductor Nanocrystals; Proc. First Int. Workshop on Semiconductor
Nanocrystals SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary (Eds. B.
Pődör, Zs. J. Horváth, P. Basa), Vol.2, pp. 417-420.
P. Basa, P. Szöllősi, Zs. J. Horváth:
Electrical study of annealed silicon nitride thin layers containing excess silicon (in
Hungarian)
Proc. Kando Conference 2006, Jan. 12-13, 2006, Budapest, Hungary,
CD:/KK_2006_eloadasok/Basa_Peter/Basa_Szilicium.pdf
Zs. J. Horváth:
Operation and preparation of non-volatile memory elements with semiconductor
nanocrystals
Proc. Kando Conference 2006, Jan. 12-13, 2006, Budapest, Hungary,
CD:/KK_2006_eloadasok/Horvathzsj/Horvathzsj_Operation.pdf
N. L. Dmitruk, O. Yu. Borkovskaya, Zs. J. Horvath, I. B. Mamontova, V. R.
Romanyuk,A. V. Sukach:
Epitaxial and diffusive p-n GaAs junction with microrelief active region
Proc. 21st European Photovoltaic Solar Energy Conf., Sept. 4-8, 2006, Dresden,
Germany, pp.513-516.
Zs. J. Horváth, P. Basa, T. Jászi, A. E. Pap, P. Szöllősi, K. Nagy, V. Hardy:
Electrical and memory properties of non-volatile memory structures with embedded
Si nanocrystals
24
Proc. 6th Int. Conf. Advanced Semiconductor Devices and Microsystems
ASDAM`06, Oct. 16-18, 2006, Smolenice, Slovakia pp.205-208.
P. Basa, A. S. Alagoz, T. Lohner, M. Kulakci, K. Nagy, R. Turan, Zs. J. Horváth:
Electrical and ellipsometry study of sputtered SiO2 structures containing Ge
nanocrystal
Extended Abstract Book 5th Solid State Surfaces and Interfaces, Nov. 19-24, 2006,
Smolenice, Slovakia, pp.17-20.
P. Basa, G. Molnár, A. A. Koós, L. Dózsa, Á. Nemcsics, Zs. J. Horváth, P. M. Gorley,
V. P. Makhniy, S. V. Bilichuk, V. M. Frasunyak, P. P. Horley:
Formation of Ge nanocrystals by electron beam evaporation
Proc. Int. Conf. Nanomeeting-2007, Physics, Chemistry and Application of
Nanostrucures, May 22-25, 2007, Minsk, Belarus (Eds. V. E. Borisenko, S. V.
Gaponenko, V. S. Gurin), World Scientific, Singapore, 2007, pp. 431-434.
Zs. J. Horváth, P. Basa, T. Jászi, K. Nagy, A. E. Pap, T. Szabó, P. Szöllősi:
MNOS and MNS memory structures with embedded Si nanocrystals
Proc. Int. Conf. Nanomeeting-2007, Physics, Chemistry and Application of
Nanostrucures, May 22-25, 2007, Minsk, Belarus (Eds. V. E. Borisenko, S. V.
Gaponenko, V. S. Gurin), World Scientific, Singapore, 2007, pp. 566-569.
Zs. J. Horváth, P. Basa:
MIS structures with embedded semiconductor nanocrystals for non-volatile memory
purposes
Proc. 13th Int. Conf. Applied Physics of Condensed Matter APCOM 2007, June 2729, 2007, Bystrá, Slovakia, pp.32-35.
Zs. J. Horváth, P. Basa, T. Jászi, A. E. Pap, A. I. Kovalev, D. L. Wainstein, L. Dózsa:
MNOS memory structures with embedded silicon nanocrystals
Proc. 16th Int. Symp. “Nanostructures: Physics and Technology”, July 15–19, 2008,
Vladivostok, Russia, pp. 126-127.
P. Basa, Zs. J. Horváth, T. Jászi, A. E. Pap, G. Molnár, A. Kovalev, D. Wainstein, P.
Turmezei:
Si3N4 based non-volatile memory structures with embedded Si nanocrystals
Proc. 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM
2008, October 12-16, 2008, Smolenice, Slovakia, pp. 63-66.
Zs. J. Horváth, V. Rakovics, B. Pődör:
Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions
Proc. 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM
2008, October 12-16, 2008, Smolenice, Slovakia, pp. 119-122.
Á. Nemcsics, E. Horváth, Sz. Nagy, L. M. Molnár, I. Mojzes, Zs. J. Horváth:
Some remarks to the nanowires grown on III-V substrate
Proc. 7th Int. Conf. Advanced Semiconductor Devices and Microsystems, ASDAM
2008, October 12-16, 2008, Smolenice, Slovakia, pp. 215-218.
25
Zs. J. Horváth, P. Basa, T. Jászi, A. E. Pap, G. Molnár, A. Kovalev, D. Wainstein, P.
Turmezei:
Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals
Proc. 32nd Int. Spring Seminar .Electron. Technol., May 13-17, 2009, Brno, Czech
Republic, Paper G05.
B. Pődör, Zs. J. Horváth, V. Rakovics:
Electrical and optical properties of InGaAsSb/GaSb
Proc. 32nd Int. Spring Seminar .Electron. Technol., May 13-17, 2009, Brno, Czech
Republic, Paper G14.
Zs. J. Horváth, P. Basa, K. Z. Molnár, T. Jászi, A. E. Pap, G. Molnár, L. Dobos, L.
Tóth, B. Pécz, P. Turmezei
Charging behaviour of MNOS structures with embedded Si or Ge nanocrystals
7th Solid State Surfaces and Interfaces SSSI 2010, Nov. 22-25, 2010, Smolenice,
Slovakia, Extended Abstract Book pp.36-38.
Könyv, könyvrészlet:
Book, part of book:
Kovács B., Horváth Zs.:
Fémes kontaktusok
[Metal contacts]
In: Mikrorelektronika és elektronikai technológia [Micoroelectronics and electronics
technology], Ed. I. Mojzes, Műszaki Könyvkiadó, Budapest, 1995, pp. 54-58.
B. Pődör, Zs. J. Horváth, P. Basa (Editors):
Semiconductor Nanocrystals; Proc. First Int. Workshop on Semiconductor
Nanocrystals SEMINANO2005, Sept. 10-12, 2005, Budapest, Hungary, Vol.1. and
Vol. 2.
Zs. J. Horváth, P. Basa:
New trends in non-volatile semiconductor memories
in: Towards Intelligent Engineering & Information Tech., (Eds. I. J. Rudas et al.), SCI
243, Springer, Berlin Heidelberg, 2009, pp. 323–333.
Zs. J. Horváth, P. Basa:
Chapter 7. Nanocrystal memory structures
in: Nanocrystals and Quantum Dots of Group IV Semiconductors, (Eds. T. V.
Torchinskaya, Yu. V. Vorobiev), American Scientific Publishers, 2010, Stevenson
Ranch, California, USA, ISBN: 1-58883-154-X, pp. 225-251.
Meghívott és plenáris előadások:
Invited and plenary lectures:
Zs.J.Horváth:
Electrical characterisation of Schottky junctions: Anomalies, parameter extraction and
barrier height engineering
26
9th International Workshop on Physics of Semiconductor Devices, December 16-20,
1997, Delhi, India.
Published in: Physics of Semiconductor Devices, Narosa Publishing House, New
Delhi, India, 1998, (Eds. V. Kumar, S. K. Agarwal), pp. 1085-1092.
Zs.J.Horváth:
Possibilities of interface characterisation in Schottky-like junctions by electrical
measurements
The International Workshop on Diagnostics of Solid State Surfaces and Interfaces,
June 24-25, 1998, Bratislava, Slovakia, Book of Abstracts pp. 8-9.
Zs.J.Horváth:
Electrical breakdown in semiconductor structures
Third Int. School-Conf. Physical Problems in Material Science of Semiconductors,
Sept. 7-11, 1999, Chernivtsi, Ukraine, Abstract Booklet p.234.
Zs.J.Horváth:
Electrical breakdown in MIS and MS systems
10th Int. Workshop on Physics of Semicond. Devices, Dec. 14-18, 1999, Delhi, India.
Published in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi,
India, 2000, (Eds. V. Kumar and S. K. Agarwal), pp. 760-767.
Zs.J.Horváth:
Spatial inhomogeneities of metal-semiconductor junctions
Workshop on Solid State Surfaces and Interfaces II, SSSI-II, June 20-22, 2000,
Bratislava, Slovakia, Book of Extended Abstracts p. 26.
Zs. J. Horváth
Vertical electrical behaviour of GaAs and Si based low dimensional structures
11th Int. Workshop on Physics of Semiconductor Devices, Dec. 11-15, 2001, Delhi,
India.
Published in: Physics of Semiconductor Devices, Allied Publisher Ltd., New Delhi,
India, 2002, (Eds. V. Kumar and P. K. Basu), pp. 265-272.
Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Al/SiGe/Si structures
3rd SSSI: Solid State Surfaces and Interfaces, Nov. 19-21, 2002, Smolenice Castle,
Slovakia.
Published in: Proc. 3rd SSSI: Solid State Surfaces and Interfaces, Comenius
University Press, Bratislava, 2002, (Eds. K. Gmucová, R. Brunner), pp.23-25.
Zs. J. Horváth:
Vertical electrical behaviour of amorphous and crystalline Si/Ge and SiGe/Si
structures
12th Int. Workshop Physics of Semiconductor Devices, Dec. 16-20, 2003, Madras,
India.
Published in: Physics of Semiconductor Devices, Narosa Publishing House, New
Delhi, 2004, (Eds. K. N. Bath and A. DasGupta), pp. 89-94.
Zs. J. Horváth:
27
Vertical electrical behaviour of silicon-based MS and MIS structures
Int. Conf. Silicon - News in Science and Technology, Febr. 29 - March 3, 2004.
Podbanské, Slovakia, Proc. of Abstracts;
Published in: Proc. Int. Conf. Silicon - News in Science and Technology, 2004, (Eds.
S. Jurecka, J. Müllerová), pp.32-39.
Zs. J. Horváth:
Semiconductor nanocrystals in dielectrics: optoelectronic and memory applications of
related metal-insulator-silicon devices
Silicon 2004, July 5-9, 2004, Irkutsk, Russia, Abstract Book p. 166.
Zs. J. Horváth:
Electrical behaviour of contacts to III-V semiconductors
Solid State Surfaces and Interfaces IV, Nov. 8–11, 2004. Smolenice, Slovakia,
Abstract Book p.9.
Zs. J. Horváth, K. Järrendahl, M. Serényi, M. Ádám, B. Pődör, J. Balázs, Zs. Czigány:
Electrical and optical behaviour of sputtered amorphous and polycrystalline Si/Ge
multilayers and SiGe layers deposited on monocrystalline Si substrates
Int. Conf. Solar Renewable Energy News - Research and Applications 2005, SREN
2005, April 2-8, 2005, Florence, Italy, Brief Proc. pp.27-29.
Zs. J. Horváth, P. Basa:
Non-volatile memory structures with embedded semiconductor nanocrystals
5th Solid State Surfaces and Interfaces, Nov. 19-24, 2006, Smolenice, Slovakia,
Extended Abstract Book p.41.
Zs. J. Horváth, P. Basa:
Semiconductor nanocrystals in dielectrics: preparation and application
NATO-Advance Study Institute Functionalized Nanoscale Materials, Devices, and
Systems for chem.-bio Sensors, Photonics, and Energy Generation and Storage, June
4-15, 2007, Sinaia, Romania, Abstract p.23.
Zs. J. Horváth, P. Basa:
MIS structures with embedded semiconductor nanocrystals for non-volatile memory
purposes
13th Int. Conf. Applied Physics of Condensed Matter, APCOM 2007, June 27-29,
2007, Bystrá, Slovakia, Proc. pp.32-35.
Zs. J. Horváth, T. Jászi, A. E. Pap, G. Molnár, Cs. Dücső, P. Basa, K. Nagy, L.
Dobos, B. Pécz, L. Tóth, P. Szöllősi, T. Szabó:
Si3N4 based nanocrystal memory structures
11th Int. Conf. Formation of Semicond. Interfaces, August 19-24, 2007, Manaus,
Brazil, Program and Abstracts, p.56.
Zs. J. Horváth, P. Basa:
Nanocrystal non-volatile memory devices
1st Int. Conf. Thin Films and Porous Materials, May 19-22, 2008, Algiers, Algeria,
Abstracts p. 43.
28
Zs. J. Horváth, P. Basa:
Semiconductor nanocrystals in dielectrics: preparation and characterization
6th Solid State Surfaces and Interfaces, November 24-27, 2008, Smolenice, Slovakia,
Extended Abstract Book pp.21-22.
Zs. J. Horváth, P. Basa:
New trends in non-volatile semiconductor memories
Budapest Tech Jubilee Conference, Sept. 1-2, 2009, Budapest, Hungary.
Zs. J. Horváth:
Progressive non-volatile memory elements
Int. Conf. Progress in Applied Surface, Interface and Thin Film Science 2009, Nov.
16-19, 2009, Florence, Italy.
Zs. J. Horváth:
Electrical characterization of Schottky junctions
7th Solid State Surfaces and Interfaces SSSI 2010, Nov. 22-25, 2010, Smolenice,
Slovakia, Extended Abstract Book p.14.
29