Vertically Aligned ZnO Nanowires as Potential Building Blocks for Nanoscale Devices
Lei Huang
Faculty Mentor: Jia “Grace” Lu
Several studies have been performed on the potential usage of quasi-one-dimensional nanostructures
for nanoscale devices. To further explore the advantages of these quasi-one-dimensional
nanostructures, vertically aligned ZnO nanowires were grown in anodic alumina membranes, which
are used as highly ordered templates. The template is a hexagonally arrayed anodic aluminum layer
with an average pore size of 80 nm. Gold was evaporated on one side of the template to serve as a
working electrode in a standard three electrode cell, and Zn was deposited, using the pulsed
electrodeposition method. XRD spectra of increasing oxidation time show that the as-grown Zn was
completely converted to ZnO. Electrical properties of a single nanowire were also obtained, using an
atomic force microscope in contact mode with a conductive probe. These nanowires will now be
used to fabricate transistors, which will serve as building blocks for nanoscale devices.
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