教師簡介資料
職
稱 副研究員
中文姓名 徐嘉鴻
英文姓名 Chia-Hung Hsu
最高學歷(畢業西元年)
Ph. D.in Physics, Boston University, USA
研究室門號/分機
S118; ext. 7118
實驗室門號/分機
E147, ext 3147
傳真
(03)578-3813
研究興趣與成果(中/英文)
E-mail
chsu@nsrrc.org.tw
中文：個人的研究主要為超薄薄膜及磊晶奈米材料的結構以及界面原子結構的研究，主要
的研究工具為同步輻射 X 光散射。過去數年來主要的研究課題之一為以磊晶方式製作的
III-V 族量子點(quantum dots)及奈米線(nano-wires)等半導體奈米結構之應力場(strain field)
以及成份分布及與其光電特性的關聯。另一研究的主題是金屬氧化物磊晶薄膜的晶體結構
與介面原子排列的研究，藉此驗證介面化學及薄膜磊晶生長機制的理論。此外還包括利用
低能量離子轟擊以侵蝕表面造成表面形貌改變，形成不同特徵的有序奈米結構,藉以研究
其形成機制。
英文：
My research interests focus on the thin film growth mechanism and structural properties of
nano-materials and ultra-thin epitaxial films. The major experimental tool is x-ray scattering. In
the last few years, my group has been working on the structural investigation of III-V
semiconductor quantum dots and nano-wires. We resolved the strain field and compositional
distribution of the MBE grown, self-assembled nano-materials and correlated the structural
characteristics with optoelectronic and other physical properties. We have also studied the
crystal structure and interfacial atomic arrangement of epitaxial films of various metal oxides,
which provide valuable data to examine various thin film growth mechanisms and the role of
interfacial chemistry. The other on-going project is investigating the evolution of surface
morphology upon low energy ion sputtering. Regularly arranged nano-features, such as
nano-dots and ripples, can be fabricated by ion bombardment. The goal of this study is to
understand the mechanisms for the formation of these surface features and the laws governing
the surface kinetic roughening phenomenon.
Selected Publications
1. Z. K. Yang, Y. J. Lee, W. C. Lee, P. Chang, M. L. Huang, and M. Hong, C.-H. Hsu, and J.
Kwo, "Cubic HfO2 Doped with Y2O3 Epitaxial films on GaAs (001) of Enhanced Dielectric
Constant", Appl. Phys. Lett. 90, (2007).
2. W. J. Chang, C. C. Hsieh, T. Y. Chung, S. Y. Hsu, K. H. Wu, T. M. Uen, J.-Y. Lin, J. J. Lin,
C.-H. Hsu, Y. K. Kuo, H. L. Liu, M. H. Hsu, Y. S. Gou, and J. Y. Juang, ",Fabrication and Low
Temperature Thermoelectric Properties of NaxCoO2 (x = 0.68 and 0.75) Epitaxial Films by the
Reactive Solid-Phase Epitaxy", Appl. Phys. Lett. 90, 61917 (2007).
3. W.-R. Liu, W. F. Hsieh, C.-H. Hsu, and K. S. Liang, and F. S.-S. Chien, “Influence of the
Threading Dislocations on the Electrical Properties in Epitaxial ZnO Thin Films”, J. of Crystal
Growth 297, 294 (2006).
4. T.Y. Cheng, C.W. Lin, L. Chang, C.H. Hsu, J.M. Lee, J.M. Lee, J.M. Chen, J.-Y. Lin, K. H.
Wu, T. M. Uen, Y. S. Gou, J. Y. Juang, “ Magnetotransport properties, electronic structure, and
microstructure of La0.7Sn0.3MnO3 thin films”, Phys. Rev. B 74, 134428 (2006).
5. C.-H. Hsu, P. Chang, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo, C. M. Huang and H. Y. Lee,
“Structure of HfO2 films epitaxially grown on GaAs (001)”, Appl. Phys. Lett. 89, 122907
(2006).
6. C.-H. Hsu, Mau-Tsu Tang, Hsin-Yi Lee, Chih-Mon Huang, K.S. Liang, S. D. Lin, Z. C. Lin,
C. P. Lee, "Composition Determination of Semiconductor Quantum Wires by X-ray Scattering",
Physica B 357, 6 (2005).
7. C.-H. Hsu, U-Ser Jeng, Hsin-Yi Lee, and K. S. Liang, D. Windover, T.-M. Lu, and C. Jin,
"Structural Study of a Low Dielectric Thin Film Using X-ray Reflectivity and Grazing
Incidence Small Angle X-Ray Scattering", Thin Solid Films 472, 323 (2005).
8. C.-H. Hsu, H.-Y. Lee, Y.-W. Hsieh, Y. P. Stetsko, N.T. Yeh, J.-I. Chyi, D. Y. Noh, M.-T. Tang,
and K.S. Liang, “X-ray scattering studies on InGaAs quantum dots”, Physica B 336, 98 (2003).