Tutorial
Semiconductor nanowire array: from formation to applications
Xiuling Li
Xiuling@illinois.edu
http://mocvd.ece.illinois.edu
Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801
Abstract: Interests in semiconductor nanowires have increased exponentially over the past decade
because of their unique optical and electrical properties and applications in nanoelectronics, photonics,
and energy harvesting and storage. This tutorial will start with the growth and dopant incorporation of
semiconductor nanowires grown via the vapor-liquid-solid (VLS) mechanism. This includes vertical as
well as a new nanowire paradigm that is planar, self-aligned, transfer-printable, and compatible with
existing microelectronics processes. Device characteristics of various types of transistors (MOSFETs,
HEMTs, TFETs, etc.) using nanowire channels will be analyzed. In addition, vertical III-V nanowires
heterogeneously integrated with silicon and graphene, as well as high aspect ratio nanowire arrays
fabricated by metal assisted chemical etching (MacEtch) for photovoltaics will be presented.