INDIVIDUAL DOPANTS SIGNATURE IN I-V CHARACTERISTICS OF
NANOSCALE SOI PN JUNCTIONS
S. Purwiyanti1,2, R. Nowak1,3, D. Moraru1, T. Mizuno1,
R. Jablonski3, D. Hartanto2, and M. Tabe1
1Research
Institute of Electronics, Shizuoka University, Japan
of Electrical Engineering, Universitas Indonesia, Indonesia
3Institute of Metrology and Biomedical Engineering, Warsaw Univ. of Technology, Warsaw
2Department
So far, studies about pn junctions characteristics in nanometer scale have been reported
in relation with photonics [1,2] and tunneling [3,4] applications. The behavior of nanoscale pn
junctions has also been reported [5,6], but not from the point of view of individual dopants. In
nanometer scale, dopants do not work just as carrier providers. It has been reported that
discrete dopants play, in fact, a key role in device transport properties. Therefore, a study of
the impact of individual dopants on the behavior of pn junctions provides useful information
about their functionality.
In this work, focusing on the effects of individual dopants, we study the nanoscale
ultra-thin SOI pn junctions in the dark condition. The device structure is shown in Fig. 1.
Random telegraph signal (RTS) has been observed at low temperatures [Fig. 2], indicating the
identification of a single charge trap. Trapping and detrapping events have also been observed
by Kelvin probe force microscope (KFM) [7]. We ascribe these phenomena to the influence of
individual dopants on the depletion layer’s potential and, implicitly, on the electrical
characteristics.
Fig. 1. Device structure and bias
configuration.
Fig. 2. I-V characteristics under forward bias at
T = 30 K. Inset: I-time characteristics for
different applied biases. Two-level RTS can be
seen in a particular applied bias.
References
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