physics nanostructures

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Curriculum Vitae
Dr. Mykola Vuichyk
V. Lashkaryov Institute of Semiconductor Physics of NAS of
Ukraine, Nauki pr., 41, Kiev, 03028, Ukraine
Department of Physics and Technology of Low Dimensional
Nanostructures
Phone: +380445251813
Fax:
+380445258342
Mobile: +380975931539
E-mail: vuichyk@gmail.com
PERSONAL
DETAILS
Date of birth 14 December,1975
Nationality Ukrainian
Citizenship Ukraine
Marital status unmarried, no children
EDUCATION
PhD study
2000-2003
Ph.D. Thesis:
University
1993-1998:
Master Thesis:
WORK
EXPERIENCE
SCIENTIFIC
ACTIVITIES
&
PROFESSIONAL
SKILLS
V. Lashkaryov Institute of Semiconductor
Physics of the National Academy of Sciences of
Ukraine,
“Photoluminescence and Raman scattering in
self- assembled CdSe/ZnSe nanoislands”
Graduate study (MSc equivalent) at the Rivne
State Institute, Rivne, Ukraine
"Investigation of electroluminescence properties
ZnS electroluminophores"
2003- 2009:
Scientist, Institute of Semiconductor Physics of
National Academy of Sciences of Ukraine,
Kyiv, Ukraine
2009 - 2010:
Postdoctoral
Researcher
in
Chemistry
Department of University of Antwerp, Belgium
2010- present:
Research scientist, Institute of Semiconductor
Physics of National Academy of Sciences of
Ukraine, Kyiv, Ukraine

The investigation of the II-VI
Photoluminescence and Raman scattering:
semiconductors
by
-
investigation of exciton and composition properties of
nanostrucrures;
-
investigation of the inhomogeneous broadening of emission
band of CdSe nanoislands;
-
study of the phonon-exiton interactions under resonance
stimulation;
-
photoluminescence
nanostructures.
study
of
defects
in
CdSe/ZnSe

The fabrication of the infrared multielement photodetectors
based on CdHgTe

The growth of the CdTe and PbTe semiconductor thin films and
heterostructures by “hot wall epitaxy” with the use of the different
substrates (Si, BaF2, PbTe, CdHgTe etc.)

Spectroscopic study of the thin films CdTe and PbTe,
investigation of the interface interactions of their components

Investigation of heavy doped III-V semiconductors by infrared
spectroscopy;

Raman measurements of molecular structure of the solid
compounds of welding fume; environmental protection and the
evaluation of influence of welding fume on the health of humans

Characterization of semiconductors by Raman Scattering (DFS24),
Micro-Raman
Scattering
(Renishaw
inVia),
Photoluminescense, Infrared Spectroscopy („Perkin Elmer”
Spectrum BXII), Scanning Electronic Microscopy (FemtoScan),
Hot Wall Molecular Epitaxy.
PERSONAL SKILLS
• working experience in the international groups
• performing the research within interdisciplinary scientific area
• creative thinking and self motivating, open to the ideas of others
• can deal well with critical circumstances
LANGUAGES
English: good level
Deutsch: basic level
Nederlands: basic knowledge
Russian, Ukrainian: mother languages
PARTICIPATION IN
INTERNATIONAL
& NATIONAL
PROJECTS
 "The properties and environmental risks of atmospheric aerosol
particles presently emanating from the Chernobyl power plant":
(UA-BOF 2837; 2007-2010) (University of Antwerp, Belgium,
Physico-Chemical Institute for the Environmental and Human
Protection, Odessa, Ukraine)
 National
Project:
“Nanomaterials,
nanosystems,
nanotechnology”, ref. number: 79/07-H (Kiev, Ukraine)
 National Project: “Optical and spectroscopic studies of
semiconductor materials and structures” ref. number:
№0103U000197 (Kiev, Ukraine)
AWARDS
 Grant of National Academy of Sciences of Ukraine for young
scientists, 2004
 Grant of Kyiv municipality for the talented young scientists,
2007
 Grant of President of Ukraine for young scientists, 2008
List of the main cardinal publications:
1. A. Evmenova, V. A. Odarych, M. Vuichyk. Ellipsometric investigation of CdTe films //
Optica Applicata –2012. –Vol. 42, No.3. – pp. 667-675.
2. Vuichyk M.V., Rashkovetskyi L.V., Lavoryk S.R., Lytvyn P.M. The processes of
selforganization and formation CdZnTe thin films by hot-wall epitaxy // Abstracts of Internation
Meeting “Clusters and nanostructured materials (CNM-3)”, Uzhgorod, Ukraine, 14-17 Oktober,
2012. – P. 88.
3. O. Paiuk, A. Stronski, N.V. Vuichyk, A. Gubanova, Ts. Krys’kov, P.F. Oleksenko.
Mid-IR impurity absorption in As2S3 chalcogenide glasses doped with transition metals //
Semiconductor Physics, Quantum Electronics & Optoelectronics. –2012. – Vol. 15. №2. – P. 152156.
4. Evmenova A.Z., Odarych V.A., Sizov F.F., Vuichyk M.V. CdTe films structure // ХІІI
International conference on the Physics and Technology of Thin Films and Nanosystems, 2011,
Ivano-Frankivsk, Ukraine, p. 106.
5. M.S. Zayats, P.O. Gentsar, M.V. Vuichyk, I.B. Yanchuk. Influence of Si-doped in
optical properties GaN thin films grown on Al2O3 substrates (in Ukr) // Physics and chemistry of
solid state, 2010, Vol.11, No1, pp.58-61.
6. M.S. Zayats, V.G. Boiko, P.O. Gentsar, M.V. Vuichyk, O.S. Lytvyn, A.V. Stronski.
Optical properties of AlN/n-Si(111) films obtained by method of HF reactive magnetron sputtering
// Functional Materials, 2010, Vol. 17, No2, pp. 209-212.
7. F. F. Sizov, Z. F. Tsybrii, M. V. Vuichyk, Ye. O Bilevych., M. V. Apatskaya, I. I.
Smoliy, I. O. Lysuk, K. V. Andreeva, N. N. Michailov. Forming of a 128X128 multielement IRphotodetectors based on CdHgTe (in Ukr) // Sensor Electronics and Microsystem Technologies,
2009, No4, pp. 39-43.
8. M. Vuichyk, Z. Tsybrii, K. Svezhentsova Ye. Bilevych and F. Sizov. Atomic Force
Microscopy and Infrared Spectroscopy of the PbTe-CdTe Heterosystems Grown by Hot Wall
Epitaxy (in Ukr) // Physics and chemistry of solid state, 2009, Vol.10, No 4, P. 784-788.
9. P.O. Gentsar, O.I. Vlasenko, M.V. Vuichyk, O.V. Stronski. Infrared spectroscopy and
electroreflectance in the region of fundamental optical transition Е0 of heavily doped n-GaAs (100)
// Functional Materials. – 2009. – Vol. 16, №1. – P. 23-28.
10. Vuichyk M.V., Tsybrii Z.F., Bilevych Y.O., Svezhentsova K.V., Sizov F.F. Influence
of the thermal activating on forming of low-dimensional structures by the “Hot wall epitaxy” //
Abstract of International Conference on chemistry, physic and technology of surface of
nanomaterials, 2008, Kyiv, Ukraine, p. 122.
11. Tsybrii Z.F., Vuichyk M.V., Bilevych Ye.O., Apatskaya M.V., Smolii M.I., Anrdreeva
E.V., Lysuk I.O. Formation of CdHgTe 128x128 multielement arrays infrared photodetectors // ХX
International scientific and technical conference on photoelectronics and night visions devices –
Moscow (Russia). – 2008. – P. 122-123.
12. Anna Z. Evmenova, Volodymyr A. Odarych, Fedir F. Sizov, Mykola V. Vuichyk.
Absorptive CdTe films optical parameters and film thickness determination by the ellipsometric
method // Optica Applicata, 2008, Vol. 38, No.3, pp. 585-600.
13. M. Vuichyk, I. Yanchuk, P. Gentsar, O. Lytvyn, M. Zayats. Raman scattering and
infrared spectroscopy of Si-doped GaN thin films // 2008 E-MRS Fall Meeting, 2008, Warsaw,
Poland, p. 240.
14. Sizov F.F., Аpatskaya M.V., Bilevych Ye.O., Tsybrii Z.F., Darchuk L.О., Smoliy М.I.,
Vuichyk M.V. Forming of a multielement photodetector using of thin films technology on CdHgTe
// III Ukrainian scientists conference on semiconductor physics, 2007, Odesa, Ukraine, p. 328.
15. M.V. Vuichyk, A. Z. Evmenova, V. A. Odarych, F. F. Sizov. Ellipsometric
Investigation of CdTe Films on CdHgTe (in Ukr.) // Physics and chemistry of solid state, 2007, 8,
No2, pp.296-300.
16. V. A. Odarych, A. Z. Sarsembaeva, F. F. Sizov, M.V. Vuichyk. Determination of
parameters of cadmium telluride films on silicon by the methods of main angle and multiangular
ellipsometry //Sem. Phys., Quant. Electr. & Optoelectr., 2006, 9, No1, pp. 55-62.
17. K.N. Kornienko, V.A. Odarych, L.V. Poperenko, N.V. Vuichik. Determination of
optical parameters of CdTe films by principal angle ellypsometry // Functional Materials. – 2006. –
Vol. 13, №1. – P. 179-182.
18. V. A. Odarych, A. Z. Sarsembaeva, F. F. Sizov, M.V. Vuichyk. Determination of
parameters of cadmium telluride films on silicon by the methods of principal angle and multiangle
ellipsometry //6th International Young Scientists Conference Problems of Optics and High
Technology Material Science “SPO 2005”, 2005, Kyiv: Ukraine. p. 113.
19. F.V. Motsnyi, M.V. Vuychik, O.M. Smolanka, E.Yu. Peresh. Phase transition in
Cs3Bi2I9 ferroelastic: investigation by Raman scattering technique // Functional Materials, 2005,
12, No3, pp. 491-496.
20. V. A. Odarych, A. Z. Sarsembaeva, F. F. Sizov, M.V. Vuichyk. Investigation of
cadmium telluride films on silicon substrate // Semiconductor Physics, Quantum Electronics &
Optoelectronics. –2005. – Vol. 8. №4. – P. 55-59.
21. Ye. Bilevych, A. Soshnikov, L. Darchuk, M. Apatskaya, Z. Tsybrii, M. Vuychik, A.
Boka, F. Sizov, O. Boelling, B. Sulkio-Cleff. Influence of substrate materials on the properties of
CdTe thin films grown by hot-wall epitaxy //J. Crystal Growth, 2005, 275, pp. e1177-e1181.
22. V.V. Artamonov, A. Baidullaeva, A.I. Vlasenko, N.V. Vuichik, O.S. Litvin, P.E.
Mozol and V. V. Strel’chuk. Atomic-force microscopy and Raman scattering studies of laserinduced structural disordering on the p-CdTe surface // Physics of the Solid State, 2004, 46, No8.
pp. 1533-1537.
23. M.Ya. Valakh, M.P. Lisitsa, V.V. Strelchuk, M.V. Vuychik, S.V. Ivanov, P.S. Коp'ev,
A.A. Toropov, Т.V. Shubina. Exciton recombination near the mobility edge in CdSe/ZnSe
nanostructures // 11th International symposium Nanostructures “Physics and Technology”, 2003,
St-Petersburg: Russia, P.208-209.
24. V.V. Artamonov, A. Baidullaeva, A.I. Vlasenko, M.V. Vuichyk, P.O. Mozol’, V.V.
Strelchuk. Raman scattering and AFM investigation of nanoclusters formated on the surface of pCdTe crystals by pulse laser irradiation // XVI International School-Seminar “Spectroscopy of
Molecules and Crystals”, 2003. Sevastopol: Ukraine, P.-103.
25. L.V. Borkovska, M.Ya. Valakh, E. F. Venger, Yu.G. Sadofyev, N.O. Korsunska, V.V.
Strelchuk, G.N. Semenova, M.V. Vuychik Investigation of inhomogeneous broadening of
CdSe/ZnSe nanoisland photoluminescence band by resonant excitation methods // Physica E, 2003,
17, pp.93-94.
26. M.Ya. Valakh, N.O. Korsunska, Yu.G. Sadofyev, V.V. Strelchuk, G.N. Semenova, L.V.
Borkovska, V.V. Artamonov, M.V. Vuychik. Anti-Stokes photoluminescence and structural defects
in CdSe/ZnSe nanostructures // Mat. Sci. & Eng. B, 2003, 101, No1-3, pp.255-258.
27. M.Ya. Valakh, M.P. Lisitsa, V.V. Strelchuk, M.V. Vuychik, S.V. Ivanov, A.A.
Toropov, T.V. Shubina and P.S. Kop’ev. Excitonic recombination near the mobility edge in
CdSe/ZnSe nanostructures // Semiconductors, 2003, 37, No11. pp. 1336-1341.
28. М.Ya. Valakh, V.V. Strelchuk, V.V. Аrtamonov, М.V. Vuichyk, S.V. Іvanov, S.V.
Sorokin, Т.V. Shubina. Photoluminescence and Raman spectroscopy of CdSe/ZnSe nanostructures
(in Ukr.) // Physichny zbirnyk NTSh., 2002, No 5, pp.140-148.
29. M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V.
Borkovska, M.V. Vuychik, M. Sharibaev. Deep-level defects in CdSe/ZnSe QDs and giant antiStokes photoluminescence. Semiconductor Physics, Quantum Electronics & Optoelectronics. V.5
No3 (2002) P.254-257.
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