Combustion-process drived comparable performances of
Zn-(In:Sn)-O thin-film transistors with a complete
miscibility
Qingjun Jiang,1 Jianguo Lu,1, a) Jipeng Cheng,1 Xifeng Li,2 Rujie Sun,1 Lisha Feng,1
Wen Dai,1 Weichao Yan,1 and Zhizhen Ye1
1
State Key Laboratory of Silicon Materials, Department of Materials Science and
Engineering, Zhejiang University, Hangzhou 310027, China
2
Key Laboratory of Advanced Display and System Application, Ministry of
Education, Shanghai University, Shanghai 200072, People’s Republic of China
a)
Electronic mail: lujianguo@zju.edu.cn
1
Caption of Figures and Tables
Figure S1 TGA and DTA curves of a-ZITO precursors with the temperature range
from room temperature to 400 ºC.
Figure S2 (a) Zn2p3/2, (b) Sn3d5/2, and (c) In3d5/2 XPS spectra of a-ZITO films.
Figure S3 Output characteristics curves of (a) a-ZIO (0), (b) a-ZITO (2), (c) a-ZITO
(5), and (d) a-ZTO (7) TFTs.
Figure S4 Transfer characteristics of a-ZITO TFTs as a function of the positive
applied stress time (0, 10, 100, 1000 and 5000 s) at VGS=10 V and VDS=5 V.
2
Figure S1
To identify chemical reactions for the ZITO precursor solutions, thermogravimetric
analysis (TGA, left axis) and differential thermal analysis (DTA, right axis)
measurements are examined. From the TGA and DTA curves, it is clear to find that all
of the five precursors undergo an abrupt and complete mass loss below 90 ºC,
corresponding to the onset of combustion and a very sharp exotherm in the DTA. This
low decomposition temperature can enable the fabrication of flexible devices below
150 ºC theoretically. It indicates the combustion process is also a potential candidate
method for fabricating flexible transparent devices.
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Figure S2
Fig. S2 presents the XPS spectra of (a) Zn 2p3/2, (b) Sn 3d5/2 and (c) In 3d5/2, which
are centered at about 1021.5 eV, 486.5 eV and 444.5 eV, corresponding to the Zn-O,
Sn-O and In-O bonds, respectively.
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Figure S3
Fig. S3 shows the output characteristics of a-ZITO TFTs, with (a) a-ZIO (0), (b)
a-ZITO (2), (c) a-ZITO (5), and (d) a-ZTO (7). A clear pinch-off and current
saturation are observed. The saturation current of IDS markedly increases as the
positive VGS increases, indicating that the TFT devices operate in an enhanced mode
with an n-type channel.
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Figure S4
Fig. S4 shows the transfer characteristics of a-ZITO TFTs as a function of the
positive applied stress time (0, 10, 100, 1000 and 5000 s) at VGS=10 V and VDS=5 V.
With increasing the PBS time, several phenomena appear: (1) the Von shifts to the
positive side, (2) the Ion does not change obviously, and (3) The Ioff gets much lower.
The reason for those is the increased charge trapping at the channel/dielectric
interface. Detailed μFE, Vth and SS plots are shown in Fig. 4. Here, notably, the a-ZTO
TFT has a lower shift than the a-ZIO TFT, further indicating that the a-ZTO TFT has
a good working stability. The a-ZTO TFT is a potential candidate for a-ZIO TFT.
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