1997 Session 1
1.1
GaAs HBT RF UCs for Wireless Applications A Profitable Business
David A. Norbury
RF Micro Devices
1.2
An Overview of Local Multipoint Communications Systems
James W. McCoy and D. Gary Lerude
Texas Instruments, Inc.
1997 Session 2
2.1
A Comparison of InAs/GaAs Suplerlattice Etch Rates and Photoresist Undercutting for Nan-Alloyed Ohmic
Contacts Using a Citric Acid: Hydrogen Peroxide Etchant
Carl Pettiford, Charles Havasy, Christopher Bozada, Charles Cerny, Gregory DeSalvo, Ross Dettmer, John Ebel,
James Gillespie, Thomas Jenkins, Kenichi Nakano, Tony Quach, James Sewell, G. David Via
Wright-Patterson AFB
2.2
Threshold voltage control of the GaAs MESFET by varying dummy gate opening during recess etching
Chang-Tae Kih, Won-Sang Lee and Ki-Woong Chung
LG Electronics Research Center
2.3
Optimization of V-Band Power pHEMT Device Performance by AFM
E.S. Ponti, M. Hu, J.J. Brown, L.D. Nguyen, J.J. Vajo, M.V. Le, M.D. Wetzel
Hughes Research Laboratories
2.4
Impact of Gate Recess Profile on GaAs Microwave Device Performance Using AFM
Milton Tam, Marcus King, C.S. Wu, Mike Sanna, Hal Edwards, Rudye McGlothin
Texas Instruments, TRW
1997 Session 3
3.1
Bump Technologies for GaAs Interconnection
C.L. Pillote, M.E. Grupen-Shemansky, S.P. Beaudoin, T.S. Cale
Snell & wilmer LLP, Motorola, Inc., Arizona State University
3.2
Manufacturing GaAs – Based Solar Cells
F. Ho, Y.C.M. Yeh, S. Khemthong and M. Yang
TECSTAR/Applied Solar Division
3.3
More for Less: Die Cost Reduction Through Shrink
L.S. Klingbeil, M.R. Wilson, C.D. Della
Motorola Semiconductor Products
3.4
Manufacturability of 0.25 um-Gate pHEMPT X-Band Power Amplifiers on 50 um-Thick GaAs Substrates with
Rectangular Via Holes
Paul Harris, David Boone, Marcus King, John Stidham, Glen Bronson, Ken Decker, Saligrama Subbarao
Texas Instruments
1997 Session 4
4.1
Reliability of GaAs-based Heterojunction Bipolar Transistors
T. Hunderson, W.L. Chen, M. Sanna
Texas Instruments
4.2
PHEMT Reliability: The Importance of RF Life Testing
L. Aucoin, M. Benedek, M.Cobb, G. Kelley
Raytheon Advanced Device Center
4.3
Direct Observation of Field Enhanced Degradation in PHEMTs
J.I. Malin, C.S. Wu, S. Hillard, C. Fuller, P. Basham, K. Decker
Texas Instruments
4.4
TI—Gate Metal Induced PHEMT degradation in hydrogen
P:.C. Chao, W. Hu H. DeOrio, A.W. Swanson
Sanders, Lockheed Martin Co.
1997 Session 5
5.1
Millimeter-Wave Monolithic IC Technology for 60 GHz Application
Yuu Watanabe, Naofumi Okubo
Fujitsu Laboratories, Inc.
5.2
Power PHEMTs – Beyond Power and Efficiency
M. Schindler, D. Teeter, A. Platzker, S. Bouthillette, J. Griffiths, K. Kessler, A. Forbes
Raytheon Microelectronics Research Laboratories
5.3
Comparison of Ka-B and LNA Performance Using Ion Implanted MESFET and p-HEMT Processes
A.Kurdoghlian, K.N. Fry, G. Luong, D. Hou, M. Sokolich, W. Lam, C.D. Chang, Z. Bardai
Hughes Aircraft Company
5.4
Collector Thickness Effects on the Performance and Manufacturability of InGaP/GaAs HBTs
D.A. Ahmari, M.T. Fresina, Q.J. Hartmann, D.W. Barlage, M. Fend, G.E. Stillman
University of Illinois
5.5
Epitaxy-on-Electronics: Building Monolithic OEICs on Commercial GaAs VLSI
J. F. Ahadian, S.G. Patterson, P.T. Vaidyanathan, Y. Royter, D. Mull, G.S. Petrich, W.D. Goodhue, S. Prasada, L.A.
Kolodziejski, C.G. Fonstad, Jr.
Massachusetts Institute of Technology, Northeaster University, University of Massachusetts
5.6
Monolithically Integrated Optoelectronic Receivers and Transmitters on GaAs-Wafers
T. Jakobus, W. Bronner, A. Gaymann, F. Grotjahn, J. Hornung, V. Hurm, K. Kohler, M. Ludwig, Z.G. Want
Franhofer-Institute
1997 Session 6
6.1
Micromaching of High Performance Circuits for Microwave and Millimeter-wave Applications
Chuck Goldsmith, Susan Exhelman, John Randall, Zhimin Yao, Ted Moise, David Denniston, Shea Chen, Mary
Avery
Texas Instruments Inc.
6.2
Single Layer Integrated Metal Field Effect Transistor (SLIMFET) Process Using a GaAs Secondary Mask
T. Quach, C. Bozada, D. DeSalvo, C. Cerny, R. Dettmer, J. Ebel, J. Gillespie, C. Havasy, T. Jekins, K. Nakano, C.
Pettiford, J. Sewell, G.D. Via
Wright-Patterson AFB
6.3
Development of a Manufacturable MESFET for 3V Wireless Applications
M.L. Balzan, R.J. Crampton, W.F. Polhamus, R.A. Sadler
ITT GTS, Cree Research, Inc.
6.4
Modeling Emitter Ledge Behavior in AlGaAs/GaAs HBTs
M. Wetzel, M.C. Ho, P. Asbeck, P. Zampardi, C.Chang, C. Farley, M.F. Chang
University of California, San Diego, Rockwell International
6.5
The Evolution of GPS Receivers at Rockwell International Over Two Decades, and the Role of GaAs
Loney R. Duncan
Rockwell International Corporation
1997 Session 7
7.1
High Quality and High Uniformity Activation of Si Implanted GaAs by Rapid Thermal Processing Using Ceramics
AIN Susceptors
Shigeki Yamaga, Bunji Hisamori, Chikao Kimura
New Japan Radio Co., Ltd.
7.2
Factors Influencing Silicon Nitride Fracturing and Delamination In GaAs Devices
M.L. Balzan, J.W. Crites, J.W.L. Dilley
ITT Industries
7.3
Improvement of Furnace Annealing Process to Suppress Slipline Generation
Y. Saito, S. Nakajima, T. Ueda, M. Kuroda
Sumitomo Electric Industries, Ltd.
1997 Session 8
8.1
Manufacturability of the InGaP/GaAs HBT Dual Etch-Stop Emitter Ledge (DESL)
M.T. Fresina, Q.J. Hartmann, D.A. Ahmari, D.W. Barlage, M. Heins, M. Feng, G.E. Stillman
University of Illinois
8.2
Manufacturable Solution for Low-Cost Millimeter-Wave IC’s
H. Hsia J.R. Middleton, R. Shimon, D. Scherrer, M. Heins, D. Caruth, J. Fendrich, M Feng
8.3
8.4
8.5
8.6
8.7
8.8
8.9
1997
9.1
9.2
9.3
9.4
1997
1997
11.1
11.2
11.3
11.4
1997
12.1
University of Illinois at Urbana-Champaign
Power Slump, Hydrogen Degradation, or Gate Lag – Pick Your Enemy
R.E. Leoni III, J.C. M. Hwang
Lehigh University, Microwave Technology, Inc.
Taguchi Tolerance Analysis of MMICs
S.P. Marsh, S.D. Wadsworth
GEC Marconi Materials Technology
Qualifying Second Source pHEMT Wafers
R. Lee, L.D. Hou, P. Chu, M. Cole, C.K. Pao, C.D. Chang, T.A. Midford
Hughes Aircraft Company
VGF GaAs for Ion-Implantation: 1 Year Later
M.J. Brophy
TriQuint Semiconductor
Silicon Oxide PECVD Process Transfer from Reinberg to Shower-Head System
J.W. Crites, M.J. Drinkwine, W.F. Polhamus
ITT-GTC
Miniature Surface Mount Plastic Packages for High Frequency Low Noise Transistors
Antoni C. Niedzwiecki, Frank B. Babbit, Jr. Charles R. Baughman, Pagtrick Chye, Jay Dehkordi, Michael Frank
Hewlett-Packard Company
Planar Doping Level Control of PHEMT Material by Electrochemical Capacitance-Voltage Profiling Technique
X. Du, R.E. Leoni, J.C. M. Hwang, T.L. Hierl
Lehigh University, Quantum Epitaxial Designs, Inc.
Session 9
DOE or Statistical Engineering?
Peter D. Shainin
Shainan Consultants, Inc.
A production FET modeling and library generation system (FLAMBE: Fast Library and Model Building Engine)
Don McGinty, David E. Root, Julio Perdomo
Plastic Air Cavity Encapsulation Process
Jong Tae Kim, Ki Sung Ham, Chan IK Park
CTI Semiconductor Corporation
GaAs Cost Drivers and an Approach to Achieving Low Cost Products
T. Cordner
Texas Instruments
Session 10
Session 11
III-V Manufacturing Material Issues for Wireless Communications
C.W. Farley, D.L. Green, K. Hong, D.J. Halchin
Rockwell Semiconductor Systems
Comparison of MOCVD and MBE for GaAs-AlGaAs HBT Manufacturing
Dwight C. Sgtreit, Aaron K. Oki, Thomas R. Block, Michael Wojtowicz, Frank Yamada, Matthew M. Hoppe
TRW Electronic Systems and Technology Division
The Effect of Substrate Parameters on the Growth of P-HEMPT Wafers by Molecular Beam Epitaxy
W.E. Quinn, B. Lauterwasser, J. Kronwasser, T. Mirandi, D. Carlson
Ratheon Advanced Device Center, M/A-COM, Inc.
Indium Precision During the Manufacture of AlGaAs/InGaAs/GaAs p-HEMTs
Forrest Hellert, James Chang, George Patterson
Hewlett-Packard Company
Session 12
Production Screening for Power Slump Tendency of MESFETs
M.S. Shirokov, R.E. Leoni and J.C. M. Hwang, M. Omori
Hehigh University, Microwave Technology, Inc.
12.2
The Extraction of Projected Operating Lifetime from Accelerated Stressing of a Single Device
Bob Yeats
Hewlett Packard