E-Beam Resist Overview
Any e-beam exposure is highly dependant upon processing and the substrate. This
information is provided as a starting point and will required experimentation to
optimize things for your work. Some of the information contained here is reprinted
from resist data sheets from the manufacturer. Often, more information is available
when you need to develop a specific resist process to use.
Many of the chemicals involved in resist processing can be extremely dangerous.
HMDS is toxic liquid. Solvents such as acetone, PGMEA are highly flammable and
explosive. TMAH developers are bases with a Ph of 14. Skin contact with these
chemicals is immediately dangerous, and eye contact will quite possibly result in loss
of sight.
BEFORE you can do any resist processing, you must be familiar with the chemicals
you will be using, and know and respect the dangers of them.
TDUR-P015 Resist
TDUR-P015 is a poor resolution chemically amplified positive resist used mostly for
substrate writing.
Characteristics:
 Positive
tone
 200 nm best resolution for isolation trench
 Poor dry etch resistance
 For substrate, normally applied at 3000 rpm / 410nm thick
 short shelf life for resist solution
 sensitive to white light
Basic Processing:
HMDS
90℃ / 60 sec
Cooling down
23℃ / 30 sec
Spin-coating
Spreading PGMEA solvent before coating resist.
3000rpm / 410nm resist thick.
Edge/back remove by PGMEA
Soft bake
100℃ / 90 sec
expose
Dose around 50µＣ/cm²
and 70µＣ/cm²
for
200nm trench and hole at 40kev
Post expose
bake
120℃ / 90 sec
Cooling down
23℃/ 30 sec
developer
E2-nozzle developer TMAH 2.38% / 60 sec
dry
Spin dry
Hard bake
115℃/ 600 sec
ADI
CD-SEM
All coating and developer process are programmed #2 and # 4 recipe by CLEAN
TRACK, respectively.
NEB22-A2 Resist
High resolution chemically amplified negative resist with high sensitivity and
contrast.
Characteristics:
 negative
tone
 100 nm best resolution for isolation line
 For substrate, normally applied at 1120 rpm / 360nm thick
 long shelf life for resist solution
 not sensitive to white light
Basic Processing:
HMDS
90℃/ 60 sec
Cooling down
23℃/ 30 sec
Spin-coating
Spreading PGMEA solvent before coating resist.
1120rpm / 360nm resist thick.
Edge/back remove by PGMEA
Soft bake
110℃ / 120 sec
expose
Dose around 7.2µＣ/cm² for 100nm isolated line at
40kev
Post expose
bake
105℃ / 120 sec
Cooling down
23℃ / 30 sec
developer
E2-nozzle developer TMAH 2.38% / 60 sec
dry
Spin dry
Hard bake
110℃ / 120 sec
ADI
CD-SEM (In-line SEM)
All coating and developer process are programmed #1 and # 5 recipe by CLEAN
TRACK, respectively.