APM4015PU
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-40V/-45A,
RDS(ON)= 13mΩ (typ.) @ VGS=-10V
RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V
•
•
•
G
Super High Dense Cell Design
D
S
Reliable and Rugged
Top View of TO-252
Lead Free and Green Devices Available (RoHS
S
Compliant)
Applications
•
G
Power Management in LCD TV Inverter
D
P-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150o C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM4015P
Assembly Material
Handling Code
Temp. Range
Package Code
APM4015P U :
APM4015P
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
1
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APM4015PU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
-40
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
-20
A
TC=25°C
-90
TC=100°C
-60
TC=25°C
-45
TC=100°C
-30
TC=25°C
50
TC=100°C
20
TJ
TSTG
*
IS
Diode Continuous Forward Current
*
IDP
ID
300µs Pulse Drain Current Tested
*
PD
Continuous Drain Current
*
RθJC
Maximum Power Dissipation
*
*
RθJA
Notes:
Storage Temperature Range
V
A
A
W
Thermal Resistance-Junction to Case
2.5
°C/W
Thermal Resistance-Junction to Ambient
50
°C/W
* Surface Mounted on 1in pad area, t ≤ 10 sec.
2
Electrical Characteristics
(TA = 25°C unless otherwise noted)
APM4015PU
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Test Condition
VGS=0V, IDS=-250µA
Gate Leakage Current
VGS=±20V, VDS=0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
Max.
-40
-1
-30
-1.3
-2
V
±100
nA
13
16
VGS=-4.5V, IDS=-10A
19
25
-0.75
-1.1
ISD=-20A, dlSD/dt=100A/µs
2
µA
-2.5
VGS=-10V, IDS=-20A
ISD=-20A, VGS=0V
Unit
V
TJ=85°C
VDS=VGS, IDS=-250µA
Diode Characteristics
VSDa Diode Forward Voltage
Typ.
VDS=-32V, VGS=0V
Gate Threshold Voltage
RDS(ON) a Drain-Source On-state Resistance
Min.
mΩ
V
28
ns
26
nC
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APM4015PU
Electrical Characteristics (Cont.)
(TA = 25°C unless otherwise noted)
APM4015PU
Symbol
Parameter
Dynamic Characteristics b
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Test Condition
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
VDD=-20V, RL=20Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics b
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-20V, VGS=-10V,
IDS=-20A
Min.
Typ.
Max.
Unit
Ω
4
2800
pF
320
220
11
21
75
135
89
161
35
64
40
56
6
ns
nC
12
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
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APM4015PU
Typical Characteristics
Drain Current
Power Dissipation
50
60
40
-ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
30
20
10
10
o
o
0
TC=25 C,VG=-10V
TC=25 C
0
0
20 40 60 80 100 120 140 160 180
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
100
Lim
it
1ms
Rd
s(o
n)
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
200
10
10ms
100ms
1s
DC
1
O
TC=25 C
0.1
0.01
0
0.1
1
10
Duty = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4 1E-3
100
Mounted on 1in pad
o
RθJA :50 C/W
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
2
4
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APM4015PU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
35
100
90
VGS=-6,-7,-8,-9,-10V
30
-ID - Drain Current (A)
RDS(ON) - On - Resistance (mΩ)
-5V
80
70
-4.5V
60
50
40
-4V
30
20
-3.5V
10
VGS=-4.5V
25
20
VGS=-10V
15
10
5
-3V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
3.0
0
20
-VDS - Drain - Source Voltage (V)
40
60
Gate Threshold Voltage
1.6
40
IDS =-250µA
ID= -20A
Normalized Threshold Vlotage
35
RDS(ON) - On - Resistance (mΩ)
100
-ID - Drain Current (A)
Drain-Source On Resistance
30
25
20
15
10
5
80
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2
3
4
5
6
7
8
9
0.0
-50 -25
10
25
50
75 100 125 150
Tj - Junction Temperature (°C)
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
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5
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APM4015PU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
100
VGS = -10V
IDS = -20A
1.6
o
1.4
-IS - Source Current (A)
Normalized On Resistance
1.8
1.2
1.0
0.8
0.6
0.4
Tj=150 C
10
o
Tj=25 C
1
0.2
o
0.0
-50 -25
RON@Tj=25 C: 13mΩ
0
25
50
0.5
0.0
75 100 125 150
0.6
0.9
1.2
1.5
1.8
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
4000
10
Frequency=1MHz
VDS= -20V
9 I = -20A
D
-VGS - Gate-source Voltage (V)
3500
3000
C - Capacitance (pF)
0.3
Ciss
2500
2000
1500
1000
500
5
10
15
20
7
6
5
4
3
2
1
Coss
Crss
0
0
8
25
30
35
0
40
10
20
30
40
50
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
0
6
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APM4015PU
Package Information
TO-252
E
A
E1
c2
L4
H
D
D1
L3
b3
c
b
e
SEE VIEW A
0
GAUGE PLANE
SEATING PLANE
0.25
A1
L
TO-252
S
Y
M
B
O
L
MIN.
A
2.18
MILLIMETERS
INCHES
MAX.
MIN.
MAX.
2.39
0.086
0.094
0.005
0.13
A1
b
VIEW A
0.50
0.89
0.020
0.035
0.215
b3
4.95
5.46
0.195
c
0.46
0.61
0.018
0.024
c2
0.46
0.89
0.018
0.035
D
5.33
6.22
0.210
0.245
D1
4.57
6.00
0.180
0.235
E
6.35
6.73
0.250
0.265
E1
3.81
6.00
0.150
0.235
e
2.29 BSC
0.090 BSC
H
9.40
10.41
0.370
0.410
L
0.90
1.78
0.035
0.070
L3
0.89
2.03
0.035
0.080
0
0.040
1.02
L4
0°
8°
0°
8°
Note : Follow JEDEC TO-252 .
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
7
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APM4015PU
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
H
330.0±2.00 50 MIN.
T1
C
d
16.4+2.00 13.0+0.50
TO-252
0
-0.2
D
1.5 MIN.
W
E1
20.2 MIN. 16.0±0.30 1.75±0.10
P0
P1
P2
D0
D1
T
4.0±0.10
8.0±0.10
2.0±0.10
1.5 +0.10
1.5 MIN.
0.6 +0.00
A0
B0
6.8±0.20 10.4±0.20
F
7.5±0.10
K0
2.5±0.20
(mm)
Devices Per Unit
Package Type
TO- 252
Unit
Tape & Reel
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
Quantity
2500
8
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APM4015PU
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
t 25 °C to Peak
25
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
Description
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
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APM4015PU
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
240 +0/-5°C
≥2.5 mm
225 +0/-5°C
3
Volume mm
≥350
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
10
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