APM4303K
P-Channel Enhancement Mode MOSFET
Pin Description
Features
•
D
-30V/-13A,
D
RDS(ON)= 7mΩ (typ.) @ VGS=-20V
RDS(ON)= 8mΩ (typ.) @ VGS=-10V
S
S
RDS(ON)= 12mΩ (typ.) @ VGS=-4.5V
•
•
•
•
Super High Dense Cell Design
D
D
S
G
Top View of SOP − 8
Reliable and Rugged
SOP-8 Package
( 1, 2, 3 )
S S S
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
•
(4)
G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
D D DD
(5,6,7,8)
P-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4303
Assembly Material
Handling Code
Temperature Range
Package Code
APM4303 K :
APM4303
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
1
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APM4303K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±25
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
-2.8
TJ
Maximum Junction Temperature
150
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
V
-13
ID*
TSTG
Unit
VGS=-20V
A
-50
A
°C
-55 to 150
TA=25°C
TA=100°C
Thermal Resistance-Junction to Ambient
2
0.8
W
62.5
°C/W
Note : *Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Conditions
APM4303K
Min.
Typ.
Max.
-30
-
-
-
-
-1
-
-
-30
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
VSD
a
VDS=-24V, VGS=0V
TJ=85°C
V
µA
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
-1
-1.8
-2.5
V
Gate Leakage Current
VGS=±25V, VDS=0V
-
-
±100
nA
VGS=-20V, IDS=-13A
-
7
8.5
VGS=-10V, IDS=-11A
-
8
10
VGS=-4.5V, IDS=-9A
-
12
16
ISD=-2.2A, VGS=0V
-
-0.75
-1.1
-
56
78
-
10
-
-
11
-
Drain-Source On-state Resistance
Diode Forward Voltage
Gate Charge Characteristics
Qg
VGS=0V, IDS=-250µA
mΩ
V
b
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
VDS=-15V, VGS=-10V,
IDS=-13A
2
nC
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APM4303K
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics
(TA = 25°C unless otherwise noted)
Test Conditions
APM4303K
Min.
Typ.
Max.
Unit
b
Ω
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
3.5
-
Ciss
Input Capacitance
-
3300
-
Coss
Output Capacitance
-
700
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
-
440
-
td(ON)
Turn-on Delay Time
-
11
21
-
13
24
-
82
149
-
42
77
-
20
-
ns
-
7
-
nC
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
trr
Turn-off Fall Time
b
qrr
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
b
Reverse Recovery Time
Reverse Recovery Charge
ISD=-13A, dlSD/dt=100A/µs
pF
ns
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
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APM4303K
Typical Operating Characteristics
Power Dissipation
Drain Current
14
2.5
12
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
10
8
6
4
0.5
2
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
n)
s(o
Rd
it
Lim
300µs
1ms
10ms
1
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=-20V
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4303K
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
20
50
VGS= 4,5,6,7,8,9,10V
45
RDS(ON) - On - Resistance (mΩ)
3.5V
40
-ID - Drain Current (A)
18
35
30
25
20
3V
15
10
5
0.5
1.0
1.5
2.0
14
VGS=4.5V
12
10
VGS=10V
8
VGS=20V
6
4
2
2.5V
0
0.0
16
2.5
0
3.0
0
10
-VDS - Drain - Source Voltage (V)
30
40
50
-ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
30
IDS =-250µA
ID=-13A
1.4
25
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
20
20
15
10
5
0
0
2
4
6
8
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10 12 14 16 18 20
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
1.2
5
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APM4303K
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
50
2.00
VGS = -20V
IDS = -13A
1.50
-IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
o
10
Tj=150 C
o
Tj=25 C
1
0.25
o
0.00
-50 -25
RON@Tj=25 C: 7mΩ
0
25
50
0.3
0.0
75 100 125 150
Tj - Junction Temperature (°C)
0.2
0.4
9
-VGS - Gate - source Voltage (V)
C - Capacitance (pF)
Ciss
3000
2500
2000
1500
Coss
Crss
500
0
1.2
1.4
10
4000
1000
1.0
Gate Charge
Frequency=1MHz
3500
0.8
-VSD - Source - Drain Voltage (V)
Capacitance
4500
0.6
VDS= -15V
ID= -13A
8
7
6
5
4
3
2
1
0
5
10
15
20
25
0
0
30
20
30
40
50
60
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
10
6
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APM4303K
Package Information
SOP-8
D
E
E1
SEE VIEW A
h X 45
°
c
A
0.25
b
GAUGE PLANE
SEATING PLANE
A1
A2
e
L
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
A
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
b
0.31
0.51
0.012
0.020
c
0.17
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
5.80
6.20
0.228
0.244
E1
3.80
4.00
0.150
0.157
e
0.049
1.27 BSC
0.050 BSC
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
0
0°
8°
0°
8°
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
7
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APM4303K
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
330.0±
2.00
P0
SOP-8
4.0±0.10
H
T1
C
d
D
W
E1
F
12.4+2.00 13.0+0.50
0.05
50 MIN.
1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±
-0.00
-0.20
P1
P2
D0
D1
T
A0
B0
K0
1.5+0.10
0.6+0.00
8.0±0.10 2.0±0.05
6.40±0.20 5.20±0.20 2.10±0.20
1.5 MIN.
-0.00
-0.40
(mm)
Devices Per Unit
Package Type
Unit
Quantity
SOP-8
Tape & Reel
2500
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
8
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APM4303K
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
9
Description
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
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APM4303K
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
≥2.5 mm
240 +0/-5°C
225 +0/-5°C
Volume mm
≥350
3
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm
<350
3
Volume mm
350-2000
3
Volume mm
>2000
3
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009
10
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