IRFP260, SiHFP260
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
200
RDS(on) (Ω)
VGS = 10 V
0.055
Qg (Max.) (nC)
230
Qgs (nC)
42
Qgd (nC)
110
Configuration
Single
D
TO-247
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mouting hole.
It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247
IRFP260PbF
SiHFP260-E3
IRFP260
SiHFP260
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
UNIT
V
46
29
A
IDM
180
2.2
W/°C
Single Pulse Avalanche Energyb
EAS
1000
mJ
Repetitive Avalanche Currenta
IAR
46
A
Repetitive Avalanche Energya
EAR
28
mJ
Linear Derating Factor
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
280
W
dV/dt
5.0
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 708 µH, RG = 25 Ω, IAS = 46 A (see fig. 12).
c. ISD ≤ 46 A, dI/dt ≤ 230 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
1
IRFP260, SiHFP260
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.45
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 µA
200
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.24
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
-
-
25
VDS = 160 V, VGS = 0 V, TJ = 125 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 28 Ab
VGS = 10 V
VDS = 50 V, ID = 28 Ab
µA
-
-
0.055
Ω
24
-
-
S
-
5200
-
-
1200
-
-
310
-
-
-
230
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
42
Gate-Drain Charge
Qgd
-
-
110
Turn-On Delay Time
td(on)
-
23
-
tr
-
120
-
-
100
-
-
94
-
-
5.0
-
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
VGS = 10 V
ID = 46 A, VDS = 160 V,
see fig. 6 and 13b
VDD = 100 V, ID = 46 A,
RG = 4.3 Ω, RD = 2.1 Ω, see fig. 10b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
13
-
-
-
46
-
-
180
-
-
1.8
V
-
390
590
ns
-
4.8
7.2
µC
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
A
G
S
TJ = 25 °C, IS = 46 A, VGS = 0 Vb
TJ = 25 °C, IF = 46 A, dI/dt = 100 A/µsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
2
D