MOS AK 2-3 April 2009
20 Years of Enabling Compact Modeling R&D Exchange
IHP - MPW and Foundry Service
R. Scholz
IHP
Im Technologiepark 25
15236 Frankfurt (Oder)
Germany
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Outline
MPW/Foundry Service for niche markets
Technologies Overview
Design Kit flow / support
MPW organisation flow
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Market Drivers
Costs:
MPW
Low Volume
Features:
Integration of many devices
Example: SGB25V (GOD)
Highest performance, Example: SG13B
New devices: Passives, RF-MEMS, Photonics
Service:
Offerings from development to final product
Availability:
Location in Europe
Support:
Support team
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Service: IHP's Involvement in Product
Development and Value Chain
ASIC Design
Prototyping (MPW),
Test, Redesign
Fabrication
On wafer test
Assembly
&
final test
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
IP (Circuit, System Department)
Services: Design Review, Synthesis
MPW service
Measurement Service
Engineering
Production
Measurement Service
Cooperation with
assembly partners
www.ihp-microelectronics.com
© 2009 - All rights reserved
Niche Markets and Special Offerings
Niche Markets
Communication (UWB, 60GHz Wireless)
Fiber Optics (Data Transfer)
Security (Imaging)
Space, Military
SGB25V (GOD)
Many additional devices
added to a 0.25µm CMOS platform
Target
for space evaluated technology
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
SG13B/SG13S
0.13µm BiCMOS
with highest available cut-off
frequencies
fT = 250GHz fMax = 300GHz
www.ihp-microelectronics.com
© 2009 - All rights reserved
Outline
MPW/Foundry Service for niche markets
Technologies Overview
Design Kit flow / support
MPW organisation flow
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Technology Portfolio 2009
SG25H1
SG25H3 (P)
Backend
TM1/TM2
Backend
TM1/TM2
Passives
Passives
SGB25V (GOD)
SG13B
SG13S
SG13C
Backend
5 layer
Backend
7 layer
Backend
7 layer
Passives
Passives
Passives
Passives
PNP
module
GOD LDMOS
module
NPN
NPN
NPN
NPN
NPN
CMOS
CMOS
CMOS
Backend
TM1 or TM1/TM2
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
CMOS
3.3V IO
www.ihp-microelectronics.com
0.13µm
logic
0.13µm
logic
CMOS
3.3V IO
CMOS
3.3V IO
© 2009 - All rights reserved
SGB25V (1- mask) HBT Construction
There are 3 HBTs differing in BVCEO and peak fT
2
Transit Frequency (GHz)
AE= 10x(0.5x0.9)µm
80
NPN-p
70
2.4V
60
BVCEO
50
NPN-s
40
4.2V
30
7V
20
VCE= 2V
10 NPN-h
0,000
0,004
0,008
0,012
0,016
Collector Current (A)
The different curves explain the typical scattering across an 8’’ wafer
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
-10
-12
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
October 05
October 05
www.ihp-microelectronics.com
-8
02/11/09 / PQW202-24
11/26/08 / PQS203-05
10/16/08 / ABM211-14
11/05/08 / PQU204-05
10/08/08 / PQJ224-03
10/06/08 / PQJ223-01
09/12/08 / PQR205-15
07/17/08 / ABM208-15
07/11/08 / PQR203-[23]
06/25/08 / PQJ222-20
06/25/08 / PQJ221-17
05/19/08 / PQO205-14
05/01/08 / PQJ220-07
04/29/08 / PQJ219-04
04/02/08 / PQJ216-15
03/28/08 / PQJ218-17
03/28/08 / PQJ217-10
03/27/08 / PQJ215-07
03/09/08 / PQQ201-21
03/06/08 / PQJ212-24
03/04/08 / PQJ214-05
03/01/08 / PQJ213-18
02/20/08 / ABB211-04
02/19/08 / PQJ211-05
01/27/08 / PQJ210-02
01/22/08 / ABB213-07
12/05/07 / PQM204-01
11/24/07 / PQJ208-04
11/09/07 / EBH202-01
10/31/07 / ABB207-[08]
10/29/07 / PQJ206-01
10/09/07 / PQJ205-24
10/04/07 / ABB205-08
09/19/07 / PQJ204-[01]
08/30/07 / PQJ202-23
04/23/06 / EBS101-22
07/04/07 / PQH203-10
05/27/07 / PQJ201-12
03/16/07 / PQF203-12
01/18/07 / PQX109-20
01/05/07 / PQX107-17
12/10/06 / PQE202-17
11/15/06 / PQX106-09
11/08/06 / PQX105-06
10/16/06 / PQD202-03
09/01/06 / PQX103-24
07/03/06 / PQX102-18
06/23/06 / PQW102-[07]
03/01/06 / PQT102-06
11/08/05 / PQO101-17
05/19/05 / PQO101-10
S004b_IC0 / S004b_IC0
→ [lg_A]
SiGe:C HBT and CMOS Yield in SGB25V
Bipolar vehicle: Array with 2048 minimum area HBTs in parallel
Spec for “good” array: IC0 < 10 pA @ VBE= 0.1V and VCB= 1V
-2
-4
-6
Q ob3
x
Q un3
Yield: 93.3%
March 09
CMOS vehicle: Gate comb-to-comb leakage current (on 500mm gate to gate)
Spec for “good” array: IL_PPLY_035s < 10pA @ 2.5 comb-to-comb voltage
Yield: 94.5%
March 09
© 2009 - All rights reserved
High Frequency SiGe MMICs for Converter and
Local Oscillator
10 GHz
Project leaded by Kayser Threde
Synthesizer in 30/20 Downconverter
Input frequency Ka (~30 GHz)
Output frequency Ka (~20 GHz)
Synthesizer,
Local Oscillator (~10 GHz)
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
KT Capability Domain for SGB25V_TM1TM2
Goal: space qualified Process
KT Capability Domain
according to ESCC24300
Semiconductor Packaging and Tests:
manufacturer:
RHe
IHP
Step 1: Successful Evaluation of the SGB25V_TM1TM2 Technology
Step 2: Capability approval process
Step 3: Components verification
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
SG13 Process Options
Bipolar
SG13S
SG13B
SG13C
Full BiCMOS
Bipolar + 3.3V MOS
RF-CMOS
High-speed HBT
(fT/fmax/BVceo: 250 GHz/ 300 GHz/ 1.7 V)
High-voltage HBT
(fT/fmax/BVceo: 40 GHz/ 120 GHz/ 4 V)
CMOS logic
Vdd=1.2V,Tox=2nm
Vdd=1.2V,Tox=2nm
Digital libraries
Digital libraries
CMOS I/O
Passives
Interconnects
Vdd=3.3V, Tox=7nm
Poly-Si resistors, MIM capacitors, MOS varactors, a.o.
7 layer Al
5 layer Al
7 layer Al
incl. 2µm & 3µm thick layers
incl. 2µm & 3µm thick layers
incl. 2µm & 3µm thick layers
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
HBT RF Characteristics (Development Lots)
350
VCE=1.5 V
300
fT / fmax (GHz)
fT, fmax (GHz)
200
100
50
0 -4
10
wE=0.17µm
fmax
250
150
350
fT
2
AE=2 x (0.17 x 0.53)µ m
2
300
fT
250
AE=0.17 x 2.04 µ m
-3
10
-2
10
0.5
1.0
1.5
2.0
Emitter length (µm)
Collector Current (A)
fT and fmax vs. collector current for two
different emitter length
VCE=1.5V
fmax
fT and fmax of HBTs with 0.17µm emitter
width as a function of emitter length
=> 250 GHz fT down to shortest LE
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
150-200 GHz Oscillators (SG13S)
Name
Frequenz
Power
Oszi1
198,5 GHz
Vcc=3V, Icc=39mA
Oszi2
-
-
Oszi3
180 GHz
Vcc=3V, Icc=41mA
Oszi4
173 GHz
Vcc=3V, Icc=38mA
Oszi5
162,5 GHz
Vcc=3V, Icc=38mA
Oszi6
167,6 – 170 GHz (VCO)
Vcc=2,75V, Icc=30mA
Currently, the highest frequencies of Silicon-based circuits!
(for fundamental oscillators)
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Outline
MPW/Foundry Service for niche markets
Technologies Overview
Design Kit flow / support
MPW organisation flow
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Analog Design Kit Flow / Cadence and ADS
ADS
Support
Cadence
RFDE
ADS
Momentum
ADS including layout
available in SG25H3
Cadence
Support
Design Flow
Virtuoso
Design Entry
Spectre,
SpectreRF
Simulation
Virtuoso
Layout
DIVA/Assura
Scheduled for
SG25H1
and SG13B
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
DRC
Verification
LVS
www.ihp-microelectronics.com
Parasitic
Extraction
© 2009 - All rights reserved
Customer Survey 2008
2008 2007 2006
Positive rating on customer satisfaction
IHP's service and products
IHP's customer service (support)
General evaluation of IHP
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
96%
96%
92%
100%
94%
98%
89%
94%
91%
92%
83%
98%
© 2009 - All rights reserved
Customer Development in MPW Project
Only Design Kit
160
Active fab user
140
a)
Others
160
Asia
140
Germany
120
120
100
Europe
USA
100
80
80
60
60
40
40
20
20
0
Dec-03
Aug-04
Nov-05
Sep-06
Aug-07
Sep-08
0
Nov-05
Sep-06
Aug-07
Sep-08
Development of customers between December 2003 and September 2008
a) Customers divided in Design Kit user and Active fab user (within the last year)
b) Geographical distribution
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
b)
Outline
MPW/Foundry Service for niche markets
Technologies Overview
Design Kit flow / support
MPW organisation flow
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Schedule for MPW
- 50 days
- 54 days
- 62 days
- add 5 days
Chip
Shipment
SGB25V/SG25H3
SG25H1
SG25H3P
Thick TM2
E-Test
Backlapping,
Wafer Dicing
Fab Out
Wafer Processing (MPW)
12 days
Customer’s Actions
Payment 50 %
of Invoice
9 days
Payment 50 %
of Invoice
Data DRC
Purchase Order
Area Request
(MPW)
1 week 1 week
Fab In
Tape In
Final DRC
Mask Generation
IHP’s Actions
Example: Estimated time between tape in and shipment for SGB25V is 71 days for MPW
(chips). Schedule can not be guaranteed.
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
MPW Shuttle and Engineering Testfield
(Mask generation)
Customer 3
Customer 2
Customer 1
Internal and external customer layouts
and structures for technology research
(3 - 5 technologies in one mask set)
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
One customer – one layout one
technology – production
www.ihp-microelectronics.com
© 2009 - All rights reserved
Wafer Thinning and Dicing
Wafer thinning is outsourced to
NXP Hamburg
Dicing in-house: Minimum 100µm scribe
lines
Shipping of 40 diced samples
ETEST data via DK-server
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
MPW Schedule 2009
TAPE IN Shipment
SGB25
V
GOD
SG25
SG13
VD H1* H3 H3P** B
S
C
only
Nov 04, 08
Feb 09
Jan 13, 09 March 30, 09
x
Feb 03, 09
June 09
May 05, 09
July 21, 09
Aug 18, 09
Dec 09
Sept 15, 09
Nov 19, 09
x
x
Nov 03, 09
Feb 10
x
x
x
x
(x)
x
x
(x)
x
x
(x)
(x)
x
x
x
x
x
x
x
x
x
x
x
x
x
* Shipment 5 days later
** Shipment 10 days later
xxx, 09 Lots with high priority
A Thick TopMetal1 (only) is available for SGB25V
(x) only for existing projects
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Thank You for Your Attention !
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Other Services: On Wafer Measurement Tests
Measurements up to 110GHz
(60 GHz LNA in this picture)
Half automated probe card measurements
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved
Other Services: Wafer Bumping for Flip Chip
Sketch for electroless
plating and bumping
- Wafer thickness 370µm
- Wafer plating – electroless Ni/Au UBM (5µm Ni/ 0.05 µm Au)
- Padsize for bumps 80 µm x 80 µm octagon or square
- Solder Ball Placement (Ball size 127 µm)
- Bump high 100µm ± 20 µm
IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany
www.ihp-microelectronics.com
© 2009 - All rights reserved