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A Listing of the Most Cited Articles in 2012 Published in
Journal of Applied Physics
Evolving morphotropic phase boundary in leadfree (Bi1/2Na1/2)TiO3-BaTiO3
piezoceramics
Wook Jo, John E. Daniels, Jacob L. Jones, Xiaoli Tan, Pamela A. Thomas, Dragan
Damjanovic, and Jürgen Rödel
J. Appl. Phys. 109, 014110 (2011)
On the phase identity and its thermal evolution of lead free (Bi1/2Na1/2)TiO3-6 mol%
BaTiO3
Wook Jo, Silke Schaab, Eva Sapper, Ljubomira A. Schmitt, Hans-Joachim Kleebe, Andrew
J. Bell, and Jürgen Rödel
J. Appl. Phys. 110, 074106 (2011)
Inelastic hosts as electrodes for high-capacity lithium-ion batteries
Kejie Zhao, Matt Pharr, Joost J. Vlassak, and Zhigang Suo
J. Appl. Phys. 109, 016110 (2011)
Increase in photocurrent by optical transitions via intermediate quantum states in
direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
Yoshitaka Okada, Takayuki Morioka, Katsuhisa Yoshida, Ryuji Oshima, Yasushi Shoji,
Tomoya Inoue, and Takashi Kita
J. Appl. Phys. 109, 024301 (2011)
Simple models for dynamic hysteresis loop calculations of magnetic single-domain
nanoparticles: Application to magnetic hyperthermia optimization
J. Carrey, B. Mehdaoui, and M. Respaud
J. Appl. Phys. 109, 083921 (2011)
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar
heteroepitaxy
Alexey E. Romanov, Erin C. Young, Feng Wu, Anurag Tyagi, Chad S. Gallinat, Shuji
Nakamura, Steve P. DenBaars, and James S. Speck
J. Appl. Phys. 109, 103522 (2011)
Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-GaZn-O, studied by hard x-ray photoelectron spectroscopy
Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, and Hideo
Hosono
J. Appl. Phys. 109, 073726 (2011)
The effect of dielectric spacer thickness on surface plasmon enhanced solar cells for
front and rear side depositions
S. Pillai, F. J. Beck, K. R. Catchpole, Z. Ouyang, and M. A. Green
J. Appl. Phys. 109, 073105 (2011)
A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface
properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As
epitaxial layers
É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R.
Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, and P. K. Hurley
J. Appl. Phys. 109, 024101 (2011)
Inverse spin-Hall effect induced by spin pumping in metallic system
K. Ando, S. Takahashi, J. Ieda, Y. Kajiwara, H. Nakayama, T. Yoshino, K. Harii, Y.
Fujikawa, M. Matsuo, S. Maekawa, and E. Saitoh
J. Appl. Phys. 109, 103913 (2011)
High-temperature electrical and thermal transport properties of fully filled
skutterudites RFe4Sb12 (R = Ca, Sr, Ba, La, Ce, Pr, Nd, Eu, and Yb)
P. F. Qiu, J. Yang, R. H. Liu, X. Shi, X. Y. Huang, G. J. Snyder, W. Zhang, and L. D. Chen
J. Appl. Phys. 109, 063713 (2011)
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN
substrate for light-emitting diodes
Jing Zhang and Nelson Tansu
J. Appl. Phys. 110, 113110 (2011)
Ultrathin multiband gigahertz metamaterial absorbers
Hui Li, Li Hua Yuan, Bin Zhou, Xiao Peng Shen, Qiang Cheng, and Tie Jun Cui
J. Appl. Phys. 110, 014909 (2011)
Numerical model of current-voltage characteristics and efficiency of GaAs nanowire
solar cells
R. R. LaPierre
J. Appl. Phys. 109, 034311 (2011)
Electronic structure of Vanadium pentoxide: An efficient hole injector for organic
electronic materials
J. Meyer, K. Zilberberg, T. Riedl, and A. Kahn
J. Appl. Phys. 110, 033710 (2011)
Recombination coefficients of GaN-based laser diodes
W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean
J. Appl. Phys. 109, 093106 (2011)
Elastic, piezoelectric, and dielectric properties of Ba(Zr0.2Ti0.8)O3-50(Ba0.7Ca0.3)TiO3
Pb-free ceramic at the morphotropic phase boundary
Dezhen Xue, Yumei Zhou, Huixin Bao, Chao Zhou, Jinghui Gao, and Xiaobing Ren
J. Appl. Phys. 109, 054110 (2011)
Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN
alloys with various In-contents
Jing Zhang, Hua Tong, Guangyu Liu, Juan A. Herbsommer, G. S. Huang, and Nelson Tansu
J. Appl. Phys. 109, 053706 (2011)
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