MLA-01122B-C4 - MicroWave Technology, Inc.

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MLA-01122B-C4
1 - 12 GHz Packaged Low-Noise MMIC Amplifier
Data Sheet Rev A
June 2010
FEATURES
•
•
•
•
•
•
•
•
•
•
APPLICATIONS
1.0 to 12 GHz
• Microwave Point-to-Point Radios
1.3 dB @ 2.0 GHz
• Satellite and Telemetry Communications
1.4 dB @ 6.0 GHz
• Test Instrumentation
1.9 dB @ 12.0 GHz
• EW Receiver Systems
P-1dB:
16 dBm @ 6.0 GHz
• Wide-band Communication Systems
OIP3:
27 dBm @ 6.0 GHz
• Commercial Wireless Systems
Gain:
17 dB @ 6.0 GHz
Bias Condition:
VDD = 5 V
IDD = 55 mA
50-Ohm On-chip Matching
Unconditionally Stable: 50 MHz to 20 GHz
Gain Control Option Available with 2nd Gate Control Voltage
4x4 mm, 24 Lead Ceramic SMT Package
Wideband:
NF:
DESCRIPTION
The MLA-01122B-C4 is a packaged fully-matched broadband Low-Noise MMIC amplifier utilizing high-reliability lownoise GaAs PHEMT technology. This MMIC is suited for Satellite Communications, Microwave radios, Instrumentation,
Wideband Systems and also many commercial wireless applications where low-noise figure with high-gain is desirable.
It has excellent gain (17 dB) and Noise Figure (1.4 dB, mid-band) over a broad frequency range. Typical P-1dB is 16
dBm and OIP3 is +27dBm @ 6 GHz. It has on-chip bias circuit, choke and DC blocking to provide bias stability and
ease of use. The 2nd Gate voltage input can be used for gain control if necessary. Available in 4x4mm, 24 Lead Ceramic
SMT Package.
ELECTRICAL SPECIFICATIONS:
P A R A M ET ER
F requenc y R ange
G ain
G ain F latnes s
Input R eturn Los s
VDD=+5.0V, VG1=+0.13V, VG2=+2V, IDD=55 mA, Ta=25 C, ZO=50 ohm
T ES T C O N D IT IO N S
1 - 8 G Hz
10 - 12 G H z
1 - 8 G Hz
1 - 12 G H z
2 G Hz
5 G Hz
10 G H z
O utput R eturn Los s
O utput P 1dB
O utput IP 3
@ 0 dB m /tone, 1 M H z s eparation
N ois e F igure
O perating B ias C onditions : V D D
ID D
S tability F ac tor K
2 G Hz
6 G Hz
10 G H z
12 G H z
2 G Hz
6 G Hz
12 G H z
2 G Hz
6 G Hz
12 G H z
V G 1= + 0.13V , V G 2= + 2V
0.05 to 20 G H z
T YP IC A L D A T A
1-12
17
19
0.7
1.5
15
9.5
13
11
17.5
16.0
15.0
13.0
30
27
25
1.3
1.4
1.9
+5
55
(1)
U N IT S
G Hz
dB
+ /-dB
dB
dB
dB m
dB m
dB
V
mA
> 1
(1) A ll data is meas ured on Ev aluation Board, w ith V G2 bias der iv ed f rom V DD bias us ing r es is tiv e v oltage div ider as s how n in Ev aluation
Boar d Sc hematic & Lay out. (2) V g1 c an be s lightly pos itiv e or negativ e depending on the lot and operation c urrent.
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
1
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
MLA-01122B-C4
1 - 12 GHz Packaged Low-Noise MMIC Amplifier
Data Sheet Rev A
June 2010
TYPICAL RF PERFORMANCE:
VDD=+5.0V, VG1=+0.13V, VG2=+2V, IDD=55 mA, Ta=25 C, ZO=50 ohm
Re turn Loss v e rsus Fre que ncy
G ain v e rsu s F r e q ue n cy & T em p
+25 C
+85 C
Input
- 40 C
Return Loss (dB)
Gain (dB)
19
17
15
13
-5
-10
-15
-20
11
0
1
2
3
4
5
6
7
8
0
9 1 0 11 12 13 14
1
2
3
F re q u e nc y (G H z )
4
5
6
7
8
9 10 11 12 13 14
Fre que ncy (G H z )
N oise Figure v e rsus Fre que ncy
C orre cte d for PC B Input Loss
Iso latio n v e rsus F re qu e n cy
2.4
Noise Figure (dB)
0
Isolation (dB)
O utput
0
21
-10
-20
-30
0
1
2
3
4
5
6
7
8
2.2
2
1.8
1.6
1.4
1.2
1
9 10 11 12 13 14
0
1
2
3
4
F re q u e n cy (G H z )
5 V , 55m A
5
6
7
8
9 10 11 12 13 14
Fre que ncy (G H z )
P-1d B v e r su s Fr e q u en cy & B ias
O utput IP3 v e rsus Fre que ncy
6.5 V , 65m A
22
34
20
32
OIP3 (dBm)
P-1dB (dBm)
(1)
18
16
14
30
28
26
24
22
12
0
1
2
3
4
5
6
7
8
9
10
11
12
0
13 14
F r e q ue n cy ( G H z )
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
1
2
3
4
5
6
7
8
9 10 11 12 13 14
Fre que ncy (G H z )
2
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
MLA-01122B-C4
1 - 12 GHz Packaged Low-Noise MMIC Amplifier
Data Sheet Rev A
June 2010
EVALUATION BOARD LAYOUT:
APPLICATION CIRCUIT SCHEMATIC:
Notes:
1) Package Backside is RF/DC GND and
must be well grounded through PCB
vias.
2) External DC bypass capacitors must
be placed as close to package as
possible.
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
3
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
MLA-01122B-C4
1 - 12 GHz Packaged Low-Noise MMIC Amplifier
Data Sheet Rev A
June 2010
MECHANICAL INFORMATION
Outline Drawing
Notes:
1)
2)
3)
4)
5)
4X4 mm, 24 Lead Ceramic Package Outline Drawing.
Dimensions are in millimeters.
Lead and Ground Paddle Plating: Gold
Package Material: Black Alumina
All GND Leads and Backside Paddle must be grounded to PCB RF/DC ground.
ABSOLUTE MAXIMUM RATINGS
SYM BOL
PARAM ETERS
UNITS
M AX
V DD
Drain V oltage
V
7
IDD
Drain Current
mA
100
0.4
Pdiss
DC Pow er Dissipation
W
Pin max
RF Input Pow er
dBm
13
Toper
Operating Case/Lead Temp Range
ºC
-40 to +85
Tch
Channel Temperature
ºC
150
Functional Diagram
Tstg
Storage Temperature
ºC
-60 to 150
Exceeding any on of these limits may cause permanent damage.
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
4
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
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