HIGH COLLECTOR TO EMITTER
VOLTAGE DARLINGTON TRANSISTOR
TYPE MULTI PHOTOCOUPLER SERIES
PS2532-1, -2, -4
PS2532L-1, -2, -4
FEATURES
DESCRIPTION
• HIGH ISOLATION VOLTAGE
BV: 5 k Vr.m.s. MIN
PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled
isolators containing a GaAs light emitting diode and an NPN
silicon Darlington-connected phototransistor. PS2532-1, -2
and -4 are in a plastic DIP (Dual In-line Package) and
PS2532L-1, -2 and- 4 are in a lead bending type (Gull-wing)
for surface mount.
• HIGH COLLECTOR TO EMITTER VOLTAGE
VCEO = 300 V MIN
• ULTRA HIGH CURRENT TRANSFER RATIO
CTR: 1500% MIN
• HIGH SPEED SWITCHING
tr, tf = 100 µs TYP
APPLICATIONS
• ISOLATED CHANNELS PER EACH PACKAGE
• DA
• POWER SUPPLY
• 1, 2, OR 4 CHANNELS AVAILABLE
• TELECOMMUNICATIONS
• DIP PACKAGE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
Transistor
Diode
SYMBOLS
PARAMETERS
UNITS
MIN
VF
Forward Voltage, IF = 10 mA
V
IR
Reverse Current, VR = 5 V
µA
C
Junction Capacitance, V= 0, f = 1.0 MHz
pF
Collector to Emitter Dark Current, VCE = 300 V, IF = 0
nA
BVCEO
Collector to Emitter Breakdown Voltage, IC = 1 mA, IB = 0
V
300
BVEBO
Emitter to Base Breakdown Voltage, IE = 100 µA, IC = 0
V
6
ICEO
CTR
Coupled
PS2532-1, -2, -4, PS2532L-1, -2, -4
VCE(sat)
R1-2
C1-2
TYP
30
400
Current Transfer Ratio, IF = 1 mA, VCE = 2 V
%
1500
V
Ω
1011
Isolation Capacitance, V = 0, f = 1 MHZ
pF
0.6
µs
100
µs
100
tr
Rise
tf
Fall Time1, VCC = 5 V, IC =10 mA
VCC = 5 V, IC = 10 mA
1.4
5
Collector Saturation Voltage, IF = 1 mA, IC = 2 mA
Isolation Resistance, Vin-out = 1 k VDC
Time1,
MAX
1.15
4000
6500
1.0
Note:
1. Test Circuit for Switching Time
VCC
PULSE INPUT
PW = 100 µs
( Duty
Cycle = 1/10 )
1
4
4
3
8
7
6
5
1
2
1
2
3
4
16 15 14 13 12 11 10
9
IF
50 Ω
2
3
Vout
RL = 100 Ω
PS2532-1
PS2532-2
1
2
3 4 5 6
PS2532-4
7
8
California Eastern Laboratories
PS2532-1, -2, -4, PS2532L-1, -2, -4
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
Diode
VR
IF
PD
PARAMETERS
UNITS
Reverse Voltage
V
Forward Current (DC)
mA
Power Dissipation
mW/Ch
Peak Forward Current
A
(PW = 100 µs, Duty Cycle 1%)
IF (PEAK)
Transistor
VCEO
Collector to Emitter Voltage
VECO
Emitter to Collector Voltage
IC
Collector Current
PC
Power Dissipation
Coupled
BV
Isolation Voltage2
TSTG
Storage Temperature
TOP
Operating Temperature
TSOL
Lead Temperature
(Soldering 10 s)
Notes:
1. Operation in excess of any one of these parameters may
result in permanent damage.
2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between
input and ouput.
RATINGS
PS2532 -1 PS2532 -2, -4
PS2532L -1 PS2532L -2, -4
6
80
150
1
6
80
120
1
V
V
mA
mW/Ch
300
6
150
300
300
6
150
300
Vr.m.s.
°C
°C
°C
5000
-55 to +150
-55 to +100
260
5000
-55 to +150
-55 to +100
260
TYPICAL PERFORMANCE CURVES (TA =
25°)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
400
Transistor Power Dissipation, PC (mW)
Diode Power Dissipation, PD (mW)
150
PS2532-1
PS2532L-1
100
1.5 mW/˚C
PS2532-2, -4
PS2532L-2, -4
50
1.2 mW/˚C
300
200
100
0
75
50
25
100
125
0
150
50
75
Ambient Temperature, TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR to EMITTER VOLTAGE
160
TA = 100 ˚C
75 ˚C
50 ˚C
Collector Current, IC (mA)
140
25 ˚C
0 ˚C
-25 ˚C
-55 ˚C
10
1
0.1
4.5 mA
4.0 mA
mA
4.0
3.5 mA
5.0 mA
120
mA
3.0
mA
5
2.
A
2.0 m
100
80
A
1.5 m
60
1.0 mA
40
20
0.01
0.6
100
Ambient Temperature, TA (°C)
100
Forward Current, IF (mA)
25
0.8
1.0
1.2
1.4
Forward Voltage, VF (V)
1.6
0
IF = 0.5 mA
1
2
3
4
5
6
7
Collector to Emitter Voltage, VCE (V)
8
PS2532-1, -2, -4, PS2532L-1, -2, -4
TYPICAL PERFORMANCE CURVES (TA = 25° C)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10 µ
300
VCE = 300 V
100 n
10 n
1n
10
IF = 0.5 mA
5
1
0.5
100 p
-50
-25
0
25
50
75
0.1
100
0
0.4
0.2
0.6
0.8
1.0
1.2
Ambient Temperature, TA (°C)
Collector Saturation Voltage, VCE(sat) (V)
NORMALIZED OUTPUT CURRENT
vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO (CTR)
vs. FORWARD CURRENT
1.2
5000
VCE = 2 V
Current Transfer Ratio, CTR (%)
∆CTR, Normalized Output Current
50
5.0 mA
2.0 mA
1.0 mA
100
1µ
Collector Current, IC (mA)
Collector to Emitter Dark Current, ICEO (nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25 ˚C
IF = 1 mA, VCE = 2 V
0.2
0
-50
-25
0
25
50
75
Sample A
4000
Sample B
3000
2000
1000
0
0.1
100
0.5
5
1
10
Ambient Temperature,TA (°C)
Forward Current, IF (mA)
SWITCHING TIME
vs. LOAD RESISTANCE
FREQUENCY RESPONSE
20
300
tr
0
50
td
Voltage Gain, Av (dB)
Switching Time, t (µs)
100
VCC = 10 V, IC = 10 mA
Pulse Width = 5 ms
Duty Cycle = 1/2
tf
10
5
ts
1
20
50
100
500
Load Resistance, RL (Ω)
1k
2k
10 Ω
-5
100 Ω
-10
1 kΩ
-15
-20
-25
-30
0.01
VCE = 4 V, IC = 10 mA
VIN = 0.1 VP-P
1 kΩ
1
µF
VIN
47
Ω
RL VOUT
0.1
1
10
Frequency, f (kHz)
100
PS2532-1, -2, -4, PS2532L-1, -2, -4
TYPICAL PERFORMANCE CURVES (TA =
25°)
CTR DEGRADATION
1.2
IF = 1 mA
1.0
∆CTR, Normalized
TA = 25 ˚C
0.8
TA = 60 ˚C
0.6
0.4
0.2
0
10
10 2
10 3
10 5
10 4
10 6
Time, Hr
OUTLINE DIMENSIONS (Units in mm) DIP (Dual In-Line Package)
PS2532-1
PS2532-2
5.1 MAX
10.2 MAX
4
3
8
1. Anode
2. Cathode
3. Emitter
4. Collector
6.5
1
3.8
MAX
2.54
1
3.8
MAX
7.62
4.55
MAX
2.8
MIN. 0.65
2.8
MIN 0.65
2.54
0.50 ± 0.10
0.25 M
1.34
0 to 15 ˚
20.3 MAX
16 15 14 13 12 11 10
9
1, 3, 5, 7.
2, 4, 6, 8.
9, 11, 13, 15.
10, 12, 14, 16.
6.5
1
2.54
2
3
4
7.62
4.55
MAX
2.8
MIN 0.65
0.50 ± 0.10
1.34
0.25 M
0 to 15˚
5
6
7
8
2
3
4
7.62
PS2532-4
3.8
MAX
5
6.5
4.55
MAX.
1.34
6
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
2
0.50 ± 0.10
0.25 M
7
Anode
Cathode
Emitter
Collector
0 to 15 ˚
PS2532-1, -2, -4, PS2532L-1, -2, -4
OUTLINE DIMENSIONS (Units in mm) Lead Bending type (Gull-Wing)
PS2532L-1
PS2532L-2
4
5.1 MAX
3
8
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
5
2
3
4
7.62
6.5
2.54
3.8
MAX
1.34 ± 0.10
0.25 M
6
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1
7.62
2.54
7
10.2 MAX
6.5
3.8
MAX
0.05 to 0.2
0.9 ± 0.25
0.05 to 0.2
0.9 ± 0.25
1.34 ± 0.10
0.25 M
9.60 ± 0.4
9.60 ± 0.4
PS2532L-4
16 15 14 13 12 11 10
20.3 MAX
9
1, 3, 5, 7.
2, 4, 6, 8.
9, 11, 13, 15.
10, 12, 14, 16.
1
2
3
4
5
6
7
Anode
Cathode
Emitter
Collector
8
7.62
2.54
6.5
3.8
MAX
0.05 to 0.2
1.34 ± 0.10
0.25 M
0.9 ± 0.25
9.60 ± 0.4
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
10/30/2001