FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 mΩ Features Description • RDS(on) = 130 mΩ (Typ.) @ VGS = 10 V, ID = 13 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • AC-DC Power Supply D G D S G TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Continuous (TC = 25oC) FDP26N40 400 Unit V ±30 V 26 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 26 A EAR Repetitive Avalanche Energy (Note 1) 26.5 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns - Continuous (TC = 100oC) - Pulsed (Note 1) 104 A (Note 2) 1352 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 15.6 - Derate Above 25oC 265 W 2.0 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDP26N40 RθJC Thermal Resistance, Junction to Case, Max. 0.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2008 Fairchild Semiconductor Corporation FDP26N40 Rev. C1 1 Unit o C/W www.fairchildsemi.com FDP26N40 — N-Channel UniFETTM MOSFET November 2013 Part Number FDP26N40 Top Mark FDP26N40 Electrical Characteristics Symbol Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 400 - - V - 0.5 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC ID = 250 μA, Referenced to 25oC VDS = 400 V, VGS = 0 V - - 1 VDS = 320 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 13 A - 0.13 0.16 Ω gFS Forward Transconductance VDS = 20 V, ID = 13 A - 25.5 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 2400 3185 pF - 390 520 pF - 30 45 pF - 48 60 nC - 15 - nC - 20 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 320 V, ID = 26 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 200 V, ID = 26 A, VGS = 10 V, RG = 25 Ω (Note 4) - 45 100 ns - 100 210 ns - 115 240 ns - 66 140 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 26 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 104 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A - - 1.4 V trr Reverse Recovery Time 406 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 26 A, dIF/dt = 100 A/μs - 5.17 - μC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 4 mH, IAS = 26 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 26 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. ©2008 Fairchild Semiconductor Corporation FDP26N40 Rev. C1 2 www.fairchildsemi.com FDP26N40 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 70 1 o o -55 C 150 C 10 o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.1 0.02 2. TC = 25 C 0.1 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 9 IS, Reverse Drain Current [A] 0.25 0.20 VGS = 10V VGS = 20V 0.15 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 0 20 40 60 ID, Drain Current [A] 1 0.2 80 Figure 5. Capacitance Characteristics 4000 1.4 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 3000 2000 *Note: 1. VGS = 0V 2. f = 1MHz Coss 1000 0 0.1 2. 250μs Pulse Test 0.6 1.0 VSD, Body Diode Forward Voltage [V] 10 VGS, Gate-Source Voltage [V] 5000 Capacitances [pF] 6 7 8 VGS,Gate-Source Voltage[V] 100 0.30 0.10 5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.35 RDS(ON) [Ω], Drain-Source On-Resistance 4 Crss 1 10 VDS, Drain-Source Voltage [V] ©2008 Fairchild Semiconductor Corporation FDP26N40 Rev. C1 8 6 4 2 0 30 3 VDS = 100V VDS = 200V VDS = 320V *Note: ID = 26A 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FDP26N40 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 13A 0.5 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 300 28 10μs 100 24 100μs 1ms 10 ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 -75 175 Figure 9. Maximum Safe Operating Area 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 20 16 12 8 1. TC = 25 C 4 o 0.01 2.5 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] 150 1 Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] Figure 11. Transient Thermal Response Curve 0.5 0.1 0.2 PDM 0.1 0.05 0.01 t1 0.02 0.01 o 1. ZθJC(t) = 0.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.002 -5 10 ©2008 Fairchild Semiconductor Corporation FDP26N40 Rev. C1 t2 *Notes: -4 10 -3 -2 -1 10 10 10 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDP26N40 — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) FDP26N40 — N-Channel UniFETTM MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FDP26N40 Rev. C1 5 www.fairchildsemi.com FDP26N40 — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FDP26N40 Rev. C1 6 www.fairchildsemi.com FDP26N40 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 ©2008 Fairchild Semiconductor Corporation FDP26N40 Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation FDP26N40 Rev. C1 8 www.fairchildsemi.com FDP26N40 — N-Channel UniFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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