AO4474
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4474/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
AO4474 and AO4474L are electrically identical.
-RoHS Compliant
-AO4474L is Halogen Free
VDS (V) = 30V
ID = 13.4A
(V GS = 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
RDS(ON) < 13.5mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
D
D
D
D
D
S
S
S
G
G
SOIC-8
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Pulsed Drain Current
TA=70°C
±12
V
TA=25°C
60
3.7
PD
Power Dissipation
TA=70°C
B, G
Avalanche Current
B, G
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
A
10.7
IDSM
IDM
B
Repetitive avalanche energy 0.1mH
Units
V
13.4
TA=25°C
Continuous Drain
Current A, F
Maximum
30
W
2.4
IAR
42
A
EAR
88
mJ
-55 to 150
°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Typ
28
57
16
Max
34
71
23
Units
°C/W
°C/W
°C/W
www.aosmd.com
AO4474
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
TJ=125°C
VGS=4.5V, ID=10A
Forward Transconductance
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=5V, ID=13.4A
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, ID=13.4A
0.1
µA
2.5
V
A
9.5
11.5
16.2
18
11
13.5
mΩ
1.0
V
5
A
1210
1452
pF
330
396
pF
85
119
pF
1.2
1.6
Ω
22
28
nC
10
13
nC
mΩ
40
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1.55
0.74
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
µA
5
VGS=10V, ID=13.4A
VSD
Units
V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
gFS
Max
30
IDSS
IS
Typ
0.8
S
3.7
nC
Gate Drain Charge
2.7
nC
Turn-On DelayTime
10
ns
6.3
ns
21
ns
2.8
ns
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=13.4A, dI/dt=100A/µs
36
Qrr
47
trr
Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=100A/µs
IF=13.4A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=13.4A, dI/dt=500A/µs
55
20
45
ns
nC
27
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev3: May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
10V
ID(A)
ID (A)
20
4.5V
60
VDS=5V
25
6V
80
3V
125°
15
25°C
40
10
VGS=2.5V
20
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
Normalized On-Resistance
2
13
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
15
VGS=4.5V
11
9
VGS=10V
7
5
1.8
VGS=10V
ID=13.4A
1.6
VGS=4.5
1.4
1.2
1
0.8
0.6
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
20
1.0E+01
ID=13.4A
125°C
1.0E+00
15
25°C
125°C
IS (A)
RDS(ON) (mΩ)
2
10
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AO4474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Capacitance (pF)
8
VGS (Volts)
2000
VDS=15V
ID=13.4A
6
4
2
1500
Ciss
1000
500
Coss
Crss
0
0
0
5
10
15
20
0
25
5
20
25
30
100.0
In descending order
TA=25°C, 100°C, 125°C, 150°C
10µs
RDS(ON)
limited
ID (Amps)
IA, Peak Avalanche Current (A)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
10
100µ
10.0
1ms
10ms
1.0
DC
TJ(Max)=150°C
TA=25°C
0.1
1
0.001
0.01
0.1
1
10
100
0.1
1000
Time in Avalache, t A (ms)
Figure 9: Single Pulse Avalanche Capability
1
10
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
140
100
TJ(Max)=150°C
TA=25°C
120
Power (W)
100
80
60
40
20
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZqJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=34°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.00001
TON
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com