IPCAP 2016

The Abstracts of the 1 International Physics Conference at the Anatolian Peak (IPCAP 2016) st 25- 27 February, 2016 Erzurum- TURKEY Prof. Dr. Hikmet KOÇAK Honorary President The Rector of Atatürk University Prof. Dr. Rıdvan DURAK Conference President Atatürk University, Head of Physics Department Prof. Dr. Sebahattin TÜZEMEN Conference Co-President Atatürk University Doç. Dr. Emre GÜR Doç. Dr. Betül GÜZELDĠR Conference Secreteriat Atatürk University Published by The Organizing Committee of IPCAP2016 3 4 Dear Friends and Colleagues, The first International Physics Conference at the Anatolian Peak, IPCAP 2016, is going to be realized between 25-27 February 2016 (Thursday to Saturday) in one of the most beautiful location in Eastern Anatolia Region, Atatürk University Nenehatun Cultural Center in Erzurum, organized by Physics Department at Atatürk University. The conference aims; to share the experiences and research results of academicians, researchers, and students (scientists) studying physics and related fields, to exchange information about the latest developments in physical science, to discuss the cooperation facilities and finally to provide scientific communication with other countries. Although recently science has not been given value that it deserves, scientific debates contribute to the development of science and technology in our country. IPCAP 2016 conference covers a wide spectrum of important topics on physics with 12 different issues; Atomic, Molecular and Plasma Physics, Solid State and Nano Physics, Nuclear Physics and Nuclear Energy, Particle Physics, Optic and Lasers, Statistic Physics, Mathematical Physics, Applied Physics, Biophysics and Medical Physics, Physics Education, Astronomy and Astrophysics and Other topics. Even though we have organized the first IPCAP 2016 conference this year, about 300 papers will be presented in 4 separated halls and in 8 oral and 2 poster sessions during 3 days. The abstracts submitted to our conference were evaluated by 40 referees and selected abstracts were categorized either an oral or a poster presentation. All accepted presentation abstracts were published in IPCAP 2016 Abstract Book. Also IPCAP 2016 Proceedings will be published in a Special Volume of the world-recognized IOP Journal Physics: Conference Series (JPCS). Also, peer-reviewed manuscripts were invited to be published in a Special issue of Thales Natural Science (IJTNS) and International Journal of Thales Engineering Science (ITHES). 5 I would like to thank honorary president of our conference rector Prof. Dr. Hikmet Koçak who has all contributed to making this conference a great success. Also, I would like to thank all conference participants who supported the conference with their knowledge, invited speakers, session chairs, authors / presenters, colleagues, conference secretary, sponsors and everybody who has all contributed to this conference with great sacrifice for months. I hope that the scientific and technical content presented during the conference and social and scientific interaction that aim to improve quality of life will lead to new and advanced studies in Physical Science. I wish is fruitful for all participants of IPCAP 2016 organized in Erzurum. Prof. Dr. Rıdvan DURAK Conference President of IPCAP 2016 6 ORGANIZING COMMITTEE Mustafa SAĞLAM Solid State Physics, Atatürk University Abdulhalik KARABULUT Atomic and Molecular Physics, Atatürk University Mehmet BĠBER Solid State Physics, Atatürk University Emre GÜR Solid State Physics, Atatürk University Neslihan EKĠNCĠ Atomic and Molecular Physiscs, Atatürk University Bahattin ABAY Solid State Physics, Atatürk University Yakup KURUCU Atomic and Molecular Physics, Atatürk University ġakir AYDOĞAN Solid State Physics, Atatürk University Yüksel ÖZDEMĠR Atomic and Molecular Physics, Atatürk University Ali GÜROL Atomic and Molecular Physics, Atatürk University Mutlu KUNDAKÇI Solid State Physics, Atatürk University Betül GÜZELDĠR Solid State Physics, Atatürk University Cahit YEġĠLYAPRAK Astronomy and Astrophysics, Atatürk University Esra KAVAZ Atomic and Molecular Physics, Atatürk University Ali BALTAKESMEZ Solid State Physics, Atatürk University Esra CĠNAN Atomic and Molecular Physics, Atatürk University Erdem SAKAR Atomic and Molecular Physics, Atatürk University Yavuz GÜNEY Astronomy and Astrophysics, Atatürk University Physics Club Atatürk University 7 SCIENTIFIC COMMITTEE ġemsettin ALTINDAL Gazi University, TURKEY Fikret ANLI Sütçü Ġmam University, TURKEY Aytunç ATEġ Yıldırım Beyazıt University, TURKEY Yıldırım AYDOĞDU Gazi University, TURKEY Enise AYYILDIZ Erciyes University, TURKEY Ferdi AKMAN Bingöl University, TURKEY Emin BACAKSIZ Karadeniz Technical University, TURKEY Mehmet BĠBER Atatürk University, TURKEY Elif BOYDAġ Atatürk University, TURKEY Güven ÇANKAYA Yıldırım Beyazıt University, TURKEY Jean Michel CHAUVEAU University of Nice Sofia Antipolis, FRANCE Seydi DOĞAN Balıkesir University, TURKEY Oğuz DOĞAN Necmettin Erbakan University, TURKEY Songül DUMAN Atatürk University, TURKEY Rıdvan DURAK Atatürk University, TURKEY Hasan EFEOĞLU Atatürk University, TURKEY Sezai ELAGÖZ Cumhuriyet University, TURKEY Kadir ESMER Marmara University, TURKEY Fahrettin GÖKTAġ Yıldırım Beyazıt University, TURKEY Ömer GÜLLÜ Batman University, TURKEY Mohd Nizar Bin HAMIDON Universiti Putra, MALAYSIA Ġbrahim HAN Ġbrahim Çeçen University, TURKEY 8 Orhan ĠÇELLĠ Yıldız Technical University, TURKEY Laurent JOLISSAINT Heig-Vd, SWITZERLAND Richard C. JONES Texas Woman's University, USA Mustafa KAÇAL Giresun University, TURKEY Abdulhalik KARABULUT Atatürk University, TURKEY Bünyamin KARABULUT Ondokuz Mayıs University, TURKEY Rıdvan KARAPINAR Yüzüncü Yıl University, TURKEY Tahsin KILIÇOĞLU Batman University, TURKEY Atalay KÜÇÜKBURSA Dumlupınar University, TURKEY Ġlham NASIROĞLU Atatürk University, TURKEY Mohamad MISSOUS Manchester University, UK Lütfi ÖZYÜZER Ġzmir Institute of Technology, TURKEY Reynier PELETIER University of Groningen, HOLLAND Recep POLAT Erzincan University, TURKEY Agnieszka SŁOWIKOWSKA Mustafa SAĞLAM Institute of Astronomy University of Zielona Góra, POLAND Atatürk University, TURKEY Önder ġĠMġEK Atatürk University, TURKEY Engin TIRAġOĞLU Karadeniz Technical University, TURKEY Sebahattin TÜZEMEN Atatürk University, TURKEY Fatih UCUN Süleyman Demirel University, TURKEY Nazım UÇAR Süleyman Demirel University, TURKEY Demet YILMAZ Atatürk University, TURKEY Sinan Kaan YERLĠ Middle East Technical University, TURKEY Yahya Kemal YOĞURTÇU Ġstanbul Sabahattin Zaim University, TURKEY 9 ADVISORY ORGANIZING COMMITTEE Bekir AKTAġ Gebze Technical University, TURKEY Gülen AKTAġ Boğaziçi University, TURKEY Ahmet ALTINDAL Yıldız Technical University, TURKEY Atilla AYDINLI Bilkent University, TURKEY Nihat BERKER Sabancı University, TURKEY Cevdet COġKUN Giresun University, TURKEY Müjdat CAĞLAR Anadolu University, TURKEY Mahmut DOĞRU Bitlis Eren University, TURKEY Yalçın ELERMAN Ankara University, TURKEY Ayhan ELMALI Ankara University, TURKEY Carlo GATTI University of Milan, ITALY Laurent JOLISSAINT Heig-Vd, SWITZERLAND Richard C. JONES Texas Woman’s University, USA Necmettin MARAġLI Yıldız Technical University, TURKEY Roland Van MEIRHAEGHE Ghent University, BELGIUM Niyazi MERĠÇ Ankara University, TURKEY Mohamad MISSOUS Manchester University, UK Hadis MORKOÇ Virginia Commonwealth University (VCU), USA Yavuz ORGANER Atatürk University, TURKEY Lütfi ÖZYÜZER Ġzmir Institute of Technolgy, TURKEY Reynier PELETIER University of Graningen, HOLLAND 10 Mike PETTY Durham University, UK Georgios POLYMERIS Aristotle University, GREECE Agnieszka SŁOWIKOWSKA Niyazi Serdar SARIÇIFTÇĠ Institute of Astronomy University of Zielona Góra, POLAND Johannes Kepler University, AUSTRIA Abdülmecit TÜRÜT Medeniyet University, TURKEY Sinan Kaan YERLĠ Middle Technical University, TURKEY IPCAP 2016 TEAM Tevfik DARIYEMEZ Yahya KARA Aslı ARAZ Fatma AKDEMĠR Elvan ġENARSLAN Günay Merhan MUĞLU Maryam Abdolahpour SALARĠ Fikriye ġeyma ÖZÇELĠK Afsoun ASHKHASĠ Ümmügülsüm SOYKAN Adem ÖGET Cevat KORKMAZ 11 CONTENT ....................................................................................................................................................... Invited Talks (IOP_01) Thursday, February 25, Mohd Nizar Bin HAMĠDON, “Future Trend in Sensor Technology”..................................................................................................................15 (IOP_02) Thursday, February 25, Sait Eren SAN “Liquid Crystals and Conducting Polymers with Nanoparticles for Several Organic Electronics Applications” …………….........................................................................................................................6 - 17 (IOP_03) Thursday, February 25, Alphan BEK “Molecular Activation by Plasmon Enhanced Nonlinear Conversion” ...................................................................................18 - 19 (IOP_04) Thursday, February 25, Ġlhami GÜLÇĠN “Polyphenolic Antioxidant Compounds-Potent Carbonic Anhydrase Enzymes Inhibitor‖..................................................20 (IOP_05) Thursday, February 25, Bekir AKTAġ ―Spin Waves in Ultra-Thin Magnetic Multilayers‖..............................................................................................................................21 (IOP_06) Thursday, February 26, Bruno DAUDIN “GaN Nanowires Grown by Molecular Beam Eputaxy: From Spontaneous Nucleation to Light Emitting Heterostructures” ...................................................................................................................................................22 (IOP_07) Thursday, February 26, CoĢkun KOCABAġ “Graphene Based Optoelectronics” ......................................................................................................................23 (IOP_08) Thursday, February 27, Hüseyin KURT “Heusler Alloys: A Rich Class of Materials”.................................................................................................................................24 (IOP_09) Thursday, February 27, Sebahattin TÜZEMEN “Approaching to Gravity?” ...................................................................................................................................................25 (IOP_10) Thursday, February 27, Niyazi MERĠÇ “Education and Training in the Nuclear Field” .........................................................................................................................26 12 Oral Presentations ..................................................................................................................................................... 01_Atomic, Mulecular and Plasma Physics February 25, 2016, Thursday [01_OP01] to [01_OP10] ..............................................28 - 37 February 26, 2016, Thursday [01_OP11] to [01_OP12] ............................ ................ 38 - 39 02_Solid State and Nano Physics February 25, 2016, Thursday [02_OP01] to [02_OP06] ..............................................41 - 46 February 26, 2016, Thursday [02_OP07] to [02_OP17] ..............................................47 - 57 February 27, 2016, Thursday [02_OP18] to [02_OP33] ................. ............................58 - 73 03_Nuclear Physics and Nuclear Energy February 27, 2016, Thursday [03_OP01] to [03_OP07] ..............................................75 - 81 04_Particle Physics February 27, 2016, Thursday [04_OP01] to [04_OP02] ..............................................83 - 84 05_Optic and Lasers February 26, 2016, Thursday [05_OP01] to [05_OP02] .............................................86 – 87 06_Statics Physics February 26, 2016, Thursday [06_OP01].............................................................................89 07_Matmematical Physics February 26, 2016, Thursday [07_OP01] to [07_OP03] ..............................................91 - 93 08_Applied Physics February 25, 2016, Thursday [08_OP01] to [08_OP08] ............................................95 - 102 13 09_ Biophysics and Medical Physics  February 25, 2016, Thursday [09_OP01] to [09_OP06] ..........................................104 - 109 February 26, 2016, Thursday [09_OP07]............................................................................110 February 27, 2016, Thursday [09_OP08]............................................................................111 10_ Physics Education February 27, 2016, Thursday [10_OP01] to [10_OP07] ..........................................113 - 119 11_ Astronomy and Astrophysics February 26, 2016, Thursday [11_OP01] to [11_OP03]...........................................121 - 123 12_Other Physics February 25, 2016, Thursday [12_OP01] to [12_OP02]...........................................125 - 126 February 27, 2016, Thursday [12_OP03] to [12_OP13] ..........................................127 - 137 Poster Presentations 01_Atomic, Mulecular and Plasma Physics February 25, 2016, Thursday [01_PP01] to [01_PP11] ...........................................139 - 149 February 26, 2016, Thursday [01_PP12] to [01_PP20] ...........................................150 - 158 02_Solid State and Nano Physics February 25, 2016, Thursday [02_PP01] to [02_PP50] ...........................................160 - 209 February 26, 2016, Thursday [02_PP51] to [02_PP100] .........................................210 - 260 03_Nuclear Physics and Nuclear Energy February 25, 2016, Thursday [03_PP01] to [03_PP08] ...........................................262 - 269 08_Applied Physics February 25, 2016, Thursday [08_PP01] to [08_PP08] ...........................................271- 278 14 09_ Biophysics and Medical Physics  February 25, 2016, Thursday [09_PP01] to [09_PP06] ...........................................280 - 286 February 26, 2016, Thursday [09_PP07] to [09_PP12]...........................................287 - 292 10_ Physics Education February 27, 2016, Thursday [10_PP01] ..........................................................................294 11_ Astronomy and Astrophysics February 25, 2016, Thursday [11_PP01] to [11_PP04] ...........................................296 - 299 February 26, 2016, Thursday [11_PP05] to [11_PP07] ..........................................300 – 302 12_Other Physics February 25, 2016, Thursday [12_PP01] to [12_PP14]............................................304 - 326 February 26, 2016, Thursday [12_PP15] to [12_PP27] ...........................................327 - 343 15 INVITED ORAL PRESENTATION 16 (IOP_01) Future Trend in Sensor Technology Mohd Nizar Bin Hamidon Engineering Faculty, Universiti Putra, Malaysia Smart' sensors are increasingly being employed, not only in industrial settings, but in every aspect of human life, where they are telling something about their environment by bridging them with the electronic world. Sensors are used to gather a wealth of information from the process that can improve operational efficiency and product quality which involving a mass of data that need to be analysis especially with the merging of the Internet of Things (IoT). They also included with new features such as communication capability and on-board diagnostics. Leading edge research in sensors has been propelled by the advancements made in fabrication, signal processing and material technology in the last decade. With these the scientific world is now on the verge of delivering sensors with radically new capabilities for the human societies. This talk deals with the future trend in sensor technology and several research work in Universiti Putra Malaysia related with them. 17 (IOP_02) Liquid Crystals and Conducting Polymers with Nanoparticles for Several Organic Electronics Applications Sait Eren San Department of Physics, Gebze Technical University, 41400, Gebze, Turkey Liquid Crystals (LC) are highly nonlinear optical materials and they are sensitive against optical, electrical and magnetic fields. This sensitivity could be exploited for various device designs. In the scope of this presentation, I will firstly discuss the diffraction grating experiments, which are indeed base experiments for Holographic data storage and principally information could be stored at the order of Terabyte per cubic centimeter via this approach. Actually it was experimentally observed and shown that dye and Carbon nanoparticles doped LCs are promising candidates as storage mediums via Holography. Second case study is devoted to another critical experimental demonstration that proves the reorientation and conservation of Carbon Nanotubes (CNT) in the structure of nematic LC. Experimental concepts propose this CNT reorientation, which is of critical importance for potential CNT applications, via electrical, optical and magnetic fields. Third case study is a Hybrid Solar Cell, which is designed and proposed as a feasible and reasonable alternative, according to acquired efficiency with the employment of zinc oxide (ZnO) nanorods and ZnO thin films at the same time. Both of these ZnO structures were grown electrochemically and poly(3-hexylthiophene) : phenyl-C61-butyric acid methyl ester; (P3HT: PCBM) was used as an active polymer blend, which was found to be compatible to prepared Indium-Tin-Oxide (ITO) substrate base. This ITO base was introduced with mentioned ZnO structure in such a way that, the most efficient configuration was optimized to be ITO/ZnO film/ ZnO nanorod/ P3HT: PCBM/Ag. All ZnO works were carried out electrochemically, that is indeed for the first time and at relatively lower temperatures.Forth one is an Organic Field Effect Transistor (OFET) device, which was prepared by a side chain thiophene based-dielectric gel copolymer and it shows a higher field-effect mobility and lower threshold voltage. The device is a sandwich type and promising results could be attributed to the compatibility that comes from the similarity between the chemical structures of semiconductor and dielectric layers due to π-π interactions caused by intermolecular overlapping of p orbitals in aromatic thiophene groups existing in both layers. Actually this kind of devices could also be a good inspiration for artificial skin concepts, if pressure sensitivity reveals at the same time. 18 One of the proposed device without pressure deal is the one, prepared with poly (MMA-coMTM) has a field-effect mobility of 0.57 cm2/Vs, a threshold voltage of -0.20 V, on/off current ratio of 103 while the device prepared with just PMMA has a field-effect mobility of 0.38 cm2/Vs, a threshold voltage of -0.26 V and on/off current ratio of 102. There are some positive qualitative results for pressure sensitivity of OFET concepts as well. Keywords: Nematic Liquid Crystals, Holography, Carbon Nanotubes, ZnO Nanorods, Solar Cells, Organic Field Effect Transistors, Artificial Skin. 19 (IOP_03) Molecular Activation by Plasmon Enhanced Nonlinear Conversion A. Bek1, 2, 3, M. E. Taşgın4, H. E. Ünalan2, 3, 5 1 Middle East Technical University, Department of Physics, 06800, Ankara, Turkey Middle East Technical University, the Center for Solar Energy Research and Applications, 06800, Ankara, Turkey 3 Middle East Technical University, Micro and Nanotechnology Program, 06800, Ankara, Turkey 4 Hacettepe University, Institute for Nuclear Sciences, 06800, Ankara, Turkey 5 Middle East Technical University, Department of Metallurgical and Materials Engineering, 06800, Ankara, Turkey 2 In this study we propose a method for deterministic activation of few molecules. We demonstrate effective background-free continuous wave nonlinear optical excitation of enhanced yellow fluorescent protein molecules that are sandwiched between asymmetrically constructed plasmonic gold nanoparticle clusters [1]. We observe that infrared photons are converted to visible photons through efficient plasmonic second harmonic generation. Our theoretical model and simulations demonstrate that nonlinear conversion of continuous wave light becomes possible by Fano resonance in the nonlinear response. We show that nonlinearity enhancement of plasmonic nanostructures via coupled quantum mechanical oscillators such as molecules can be several orders larger as compared to their classical counterparts [2-3]. Our numerical simulations demonstrate that observation of second harmonic generation with continuous wave laser becomes possible owing to the cooperative action of conversion enhancement through Fano resonance, hybridization in the plasmon absorption spectrum and the size asymmetry of nanoparticle dimers. We further investigate the Fano resonances in intrinsic nonlinear optical response of single or coupled metal nanoparticles. We show that Fano resonance conditions can be tuned to enhance nonlinear optical conversion. When a bare metal nanoparticle is coupled with a plasmonic nonlinear converter, second harmonic generation can be enhanced by several orders of magnitude. This phenomenon emerges due to path interference effects. It is shown that second harmonic generation enhancement in hybrid structures can be obtained even in the absence of coupled quantum emitters [4]. This is an important finding with the potential of facilitating use of purely metallic nanoparticles with appropriate plasmonic properties for efficient nonlinear conversion. 20 References [1] Salakhutdinov I., Kendziora D., Abak M. K., Turkpence D., Piantanida L., Fruk L., Tasgin M. E., Lazzarino M. & Bek A., Preprint at http://arxiv.org/abs/1402. 5244v2 (2014). [2] Türkpence D., Akguc G. B., Bek A. & Tasgin M. E., J. Opt., 16, 105009 (2014). [3] Tasgin M. E., Preprint at http://arxiv.org/abs/1404.3901 (2014). [4] Yildiz B. C., Tasgin M. E., Abak M. K., Coskun S., Unalan H. E. & Bek A., Preprint at http://arxiv.org/abs/1412.0238 (2014). 21 (IOP_04) Polyphenolic Antioxidant Compounds-Potent Carbonic Anhydrase Enzymes Inhibitors İlhami Gülçin Atatürk University, Faculty of Sciences, Department of Chemistry, 25240-Erzurum-Turkey Polyphenols compounds are a structural class of mainly natural, but also synthetic or semisynthetic, organic chemicals characterized by the presence of large multiples of phenol structural units. On the other hand, an antioxidant molecule has been defined as any substance when found in low concentrations compared to that of an oxidizable substrate significantly delays or inhibits the oxidation. Antioxidant compounds can scavenge free radicals and increase shelf life by retarding the process of lipid peroxidation, which is one of the major reasons for deterioration of food, medicine and pharmaceutical products during processing and storage. The major antioxidant compounds are especially phenolics and flavonoids, which are responsible for their health benefits. Carbonic anhydrase (CA, EC 4.2.1.1) is a pH regulatory enzyme in all life kingdoms, being found in organisms all over the phylogenetic tree. It catalyzes the hydration of carbon dioxide (CO2) and water (H2O) to bicarbonate ion (HCO3-) and the corresponding dehydration of HCO3- in acidic medium with regeneration of CO2. CA isoforms are found in a variety of tissues. They participate in several crucial biological processes such as acid-base balance, respiration, CO2 and ion transportation, bone resorption, ureagenesis, gluconeogenesis, lipogenesis and electrolyte secretion. On the other hand, the phenyl moiety of phenol was found to lay in the hydrophobic part of the CA active site, where CO2, the physiologic substrate of the CAs, binds in the precatalytic complex, explaining thus the behavior of phenol as a unique CO2 competitive inhibitor. This presentation consists of two main sections. The first section is devoted to main phenolic antioxidant compounds in the foodstuffs and beverages. The second general section is about some definitions of CA inhibitory effects of the main phenolic compounds used for antioxidant activity. The phenolic compounds and acids had marked especially CA I, and II inhibition effects and might be used as leads for generating CA isoenzyme inhibitors. This class of compounds may lead to isoform-selective inhibitors targeting just one or few of the medicinally relevant CAs. In addition, there are given some chemical and kinetic basis and technical details related to phenolic antioxidant compounds and CA isoenzymes. 22 (IOP_05) Spin Waves in Ultra-Thin Magnetic Multilayers B. Aktaş, R. Topkaya Gebze Technical University, Department of Physics, 41400, Gebze/Kocaeli, Turkey Spin wave resonance (SWR) has been widely used by researchers to study magnetic materials since the basic theory was introduced first by Kittel, Herring, Amend and Rado [1-3]. The SWR modes can be excited even by a uniform rf field if certain boundary conditions are met. In this study, the fundamental aspects of the collective spin behaviour in magnetic thin films were investigated. A basic dynamic equation of motion was used together with suitable boundary conditions at the surface or interfaces of magnetic thin films or multilayers. Gilberttype damping parameter was assumed in order to simulate the SWR spectra. It has been realized that the theory developed for magnetic multilayered thin films is suitable to apply to also thick (bulk) plate-like samples in limiting case for a large number of layer. The spectra strictly depend on equilibrium direction of dc magnetization. Since the equilibrium direction continuously varies as the external field is swept, it has to be calculated for each value of the external field during the record of the SWR spectra. However, it is quite a lot of time consuming, that is, the computer speed may not be enough especially for multilayered structures. Therefore, we have developed a new technique and algorithm to speed up this process. It has been shown that the SWR technique is very suitable to study the spin dynamics and extract various relevant magnetic parameters. References [1] Herring, C., Kittel, C., Physical Review, 81 (5), 869-880, (1951). [2] Ament, W. S., Rado, G. T., Physical Review, 97 (6), 1558-1566, (1955). [3] Kittel, C., Physical Review, 110 (6), 1295-1297, (1958). 23 (IOP_06) GaN Nanowires Grown by Molecular Beam Epitaxy: From Spontaneous Nucleation to Light Emitting Heterostructures Bruno DAUDIN 1 2 Univ. Grenoble Alpes, F-38000 Grenoble, France CEA, INAC-PHELIQS, "Nanophysique et semiconducteurs" Group, F-38000 Grenoble, France Nitride-based light emitting diodes (LEDs) are now widely used for a wide range of applications, including domestic lightning. Present applications are based on the combination of blue LEDs with phosphors in order to produce white light. This is due to the limited efficiency of LEDs in the long wavelength range (green and red). After discussing the limitations of conventional InGaN/GaN LEDs, I will show how nanowire (NW) based LEDs could allow one to extend the present limitations and overcome the present limitations of conventional LEDs. In particular, I will report on the growth, structural and optical characterization of InGaN nanowire (NW) heterostructures grown by molecular beam epitaxy, in view of realizing green and red light emitting diodes (LEDs). As evidenced by a combination of Energy Dispersive X-rays Spectroscopy (EDS) and photoluminescence (PL) data, it will be shown that Indium content can be as large as 60%. The dominant role of carrier localization in InGaN NWs will be discussed in details as well as the potential of NW heterostructures for a new generation of LEDs. 24 (IOP_07) Graphene based optoelectronics from visible to microwave Coşkun Kocabaş Bilkent University, Department of Physics, Ankara, Turkey Graphene emerges as a viable material for optoelectronics because of its broad optical response and gate-tunable properties. Atomic thickness together with tunable high mobility charge carriers yields a unique platform for electrical control of light-matter interactions. For practical applications, however, single layer graphene has performance limits due to its small optical absorption defined by fundamental constants. In the first part of the talk will review the recent research on graphene based optoelectronic devices covering a broad spectrum from visible to microwave. In the second part I will summarize our work on application of graphene in adaptive camouflage systems. 25 (IOP_08) Heusler Alloys: A Rich Class of Materials Hüseyin Kurt İstanbul Medeniyet University, Department of Engineering Physics, Turkey Materials with varying electronic and magnetic structures enable new functionalities. For example, a semiconductor can be used to turn on and off electric current, a superconductor enable dissipation-less electric current to flow, and a spin valve device can act as a valve for electric current controlled by external magnetic fields. Heusler alloys are usually ternary alloys that can be engineered to exhibit electronic and magnetic properties spanning a very wide class of materials. By engineering a well ordered face centered cubic structure novel band structures and magnetic properties can be achieved. During this talk I will give a recent overview of novel materials with novel functionalities obtained through judicious selection of elements and crystallizing them in the L21 or C1b Heusler crystal structures. 26 (IOP_09) Approaching to Gravity? Sebahattin Tüzemen Physics Department, Science Faculty, Atatürk University, Erzurum, Turkey Following the discovery of Higgs Bosons (H) with a mass of around 126 GeV/c2, it is hypothesized in this study that the gauge bosons (theoretically predicted to be gravitons) in the mass interaction may be produced by H, just as photons are produced in the case of electromagnetic (EM) interaction. Although the hypothesis is extremely difficult to prove experimentally in gravitation mechanism, from the parallel estimation of ―quantum efficiencies‖ of virtual gravitons produced by virtual H annihilation in gravitation and virtual photons produced by virtual electron-positron annihilation in EM interaction, due to Heisenberg’s Uncertainty Principle (HUP), we evaluate that the relative ratio of photon to graviton intensities is in the order of 1036 which is in agreement with the relative strength between EM and gravitational interactions predicted in Quantum Field Theory (QFT). 27 (IOP_10) Education and Training in the Nuclear Field Niyazi Meriç Director Ankara University Institute of Nuclear Sciences Bearing in mind the long lead times generally required for nuclear education and training, the establishment and preservation of an adequate nuclear workforce supply calls for systematic planning decades ahead. In this respect, contradictory energy policies can have grave effects. A deteriorated global context caused by the persistent financial crisis and the negative sentiments in the wake of the Fukushima accident heighten uncertainties and may exacerbate existing shortcomings. Indeed, shifting or deferred government decisions act as deterrent mechanisms in investment and employment, and have deleterious repercussions on the interest and engagement of younger people in the industry. 28 ORAL SESSIONS 01_Atomic, Molecular and Plasma Physics February 25, [01_OP01] to [01_OP12] 29 (01_OP01) Lipkin-Meshkov-Glick Model as a Coupled Quantum Otto Engine Selçuk Çakmak1,2, Ferdi Altintaş2,3 and Özgür E. Müstecaplıoğlu2 1 Department of Physics, Ondokuz Mayıs University, Samsun, Turkey 2 Department of Physics, Koç University, Sarıyer, İstanbul 3 Department of Physics, Abant İzzet Baysal University, Bolu, Turkey e-mail: secakmak@ku.edu.tr We investigate the concept of heat engines at nanoscale, i.e., quantum heat engines (QHEs). The successful control and production of systems at nanoscale are inspired many proposals of QHEs, recently. In this presentation, we propose Lipkin-Meshkov-Glick (LMG) model as a coupled quantum Otto engine. We calculate the work output and the thermal efficiency for different cases of the adiabatic changes. We mainly consider the effect of the quantum coupling on the performance of the Otto engine. We show that with LMG model, one can approach classical Carnot bound with an Otto cycle. We compare our results with a single qubit Otto engine and demonstrate the possible enhancement for the performance of the quantum Otto engine due to the quantum coupling between spins. 30 (01_OP02) X-Ray Crystal Structure and Cu2+ Doped EPR Studies of CoPrdn Complex İ. Yıldırım1 and B. Karabulut2 1 Department of Radiotherapy, Vocational School of Health Services, Biruni University, Topkapı 34010, İstanbul, Turkey, iyildirim@biruni.edu.tr 2 Department of Computer Engineering, Faculty of Engineering, Ondokuz Mayıs University, Kurupelit 55139, Samsun, Turkey, bbulut@omu.edu.tr The crystal structure of [Co3(dpc)4(H2O)4]·2[Co(Hdpc)(dpc)]· 2[Co2(Hdpc)(dpc)(H2O)5]· 2[Co2(Hdpc)2(H2O)5]·14H2O, (CoPrdn), (dpc: C7H3NO4, pyridine-2,6 dyil bis ((λ1-oxidanyl) methanon)), (Hdpc: C7H4NO4, 6-((λ1-oxidanyl) carbonyl) picolinic acid) complex has been determined by XRD technique. The single crystal of CoPrdn complex is triclinic with the space group . The unit cell dimensions of CoPrdn complex are a=15.6330(4)Å, b=15.7836(4) Å, c=16.4409(5) Å, α=89.908(2)°, β=68.620(2)° and γ=76.429(2)° with Z=2. The magnetic environments of Cu2+ doped CoPrdn complex have been identified by EPR technique. The angular variation of spectra of Cu2+ doped CoPrdn single crystal shows that two different Cu2+ complexes are located in different chemical environments. The spin Hamiltonian parameters have been calculated. The results indicate the symmetry of paramagnetic center is rhombic. The ground state wave function of Cu2+ ion has been constructed using EPR parameters. 31 (01_OP03) Ab Initio and DFT Conformational Study on Isonicotinic Acid and Its Derivatives Güventürk Uğurlu1, Murat Beytur2 and Haydar Yüksek3 1 2 Department of Physics, Kafkas University, Kars, Turkey,gugurlu@kafkas.edu.tr Department of Chemistry, Kafkas University, Kars, Turkey, muratbeytur83@gmail.com 3 Department of Chemistry, Kafkas University, Kars, Turkey, hhigh61@gmail.com Ab initio and DFT calculations have been performed to characterize some ground state structures of Isonicotinic acid and its derivatives molecules using the 6-311++G(d, p) basis set. Molecular structure, dipole moment, relative energies, rotational barriers, polarizability, first static hyper polarizability, and potential energy scan of isonicotinic acid, isonicotinamide acid, isonicotinic acid hydrazide and 1-isonicotinyl-2-isopropylhydrazide molecules have been calculated by using 6-311++G(d,p) basis set for both models. The energy band gap of those molecules have been carried out at different basis sets. The calculated the highest occupied molecular orbital (HOMO) energy and the lowest unoccupied molecular orbital (LUMO) energy values of title molecules compared with data in the literature. All computational studies have been performed with the Gaussian 09W program package. Keywords: 1-isonicotinyl-2-isopropylhydrazide molecules, DFT, HF, NMR 32 (01_OP04) K/K X-ray Intensity Ratios and Fluorescence Yields of Zn Elements in the Phthalocyanine Complexes M. Doğan1, E. Cengiz1, Ü. Demirbaş2, O. K. Köksal1, K. Karabulut1, G. Apaydın1, H. Kantekin2 and E. Tıraşoğlu1 1 Karadeniz Technical University, Faculty of Science, Physics Department, Trabzon, Turkey, mfdogan58@gmail.com 2 Karadeniz Technical University Faculty of Science, Chemistry Department, Trabzon, Turkey, udemirbas@ktu.edu.tr Influence of the chemical effects on K/K X-ray intensity ratios of Zn elements in the phthalocyanine complexes was investigated. The samples were excited by 59.5 keV γ-rays from a 241Am annular radioactive source. The fluorescence K X-rays from the sample were detected using a collimated Ultra-LEGe detector having a thickness of 5mm and an energy resolution of 140eV at 5.96 keV. Efficiency of the ultra low Ge detector has been constructed using the experimental values of the photon detection of a gamma-spectrometer based on K X-rays of some elements. It was observed the effects of different ligands on the K/K X-ray intensity ratios and fluorescence yields. These effects were interpreted according to the charge transfer process from central atoms to ligands or vice versa. 33 (01_OP05) EPR Study of [Cu(Him)4]·2Br Complex İ. Yıldırım1 and B. Karabulut2 1 Department of Radiotherapy, Vocational School of Health Services, Biruni University, Topkapı 34010, İstanbul, Turkey, iyildirim@biruni.edu.tr 2 Department of Computer Engineering, Faculty of Engineering, Ondokuz Mayıs University, Kurupelit 55139, Samsun, Turkey, bbulut@omu.edu.tr The single crystal of [Cu(Him)4]·2Br (Him: C3H4N2, imidazole) complex has been investigated at ambient temperature in three mutually perpendicular planes by EPR technique. The magnetic environments of [Cu(Him)4]·2Br complex have been identified by EPR technique. The study reveals the existence of two magnetically inequivalent Cu2+ sites. The principal values of g tensors were obtained. The EPR parameters show that the paramagnetic centers have rhombic symmetry. 34 (01_OP06) Study of Photon Interaction Parameters of Some Compounds for Different Radiation Sources A. Levent1, Y. Özdemir2 1 Department of Electricity and Energy, Atatürk University, 25800 Erzurum, Turkey, aytaclevet@atauni.edu.tr 2 Department of Physics, Sciences Faculty, Atatürk University, 25240 Erzurum, Turkey The photon interaction parameters such as mass attenuation coefficient, effective atomic number and effective electron density have been measured for some chemical compounds using 137Ba, 157Gd and 241Am γ-rays sources in stable geometry. The mass attenuation coefficients have been determined experimentally via Energy Dispersive X-ray Fluorescence Spectroscopy (EDXRF) system and theoretically by using WinXCom computer program for Fe(NO3)3, V4O2, NaCO3.H2O, CuCI, C6H5FeO7.H2O compounds. Then, effective atomic numbers, Zeff, and electron densities, Neff, have been calculated by using the mass attenuation coefficients. The obtained values of effective atomic numbers have been compared with the ones calculated according to a different approach proposed by Hine and the calculated ones from theory. 35 (01_OP07) Investigation of Coherent and Incoherent Scattering Cross Sections Ratios of Some Foil Metals Depending on the Temperature N. Çatal1, Y. Özdemir1, M. Ertuğrul1 1 Atatürk University, Science Faculty, Physic Department, Erzurum, Turkey nurselcatal@gmail.com In this study, it was aimed at examining the ratios of coherent and incoherent scattering cross sections depending on the temperature for the elements Cd, In, Sn and Pb by 59.5 keV γ-rays from a 100 mCi 241Am radioisotope point source. The coherent and incoherent intensity of Cd, In, Sn and Pb have been measured by using a Si (Li) solid-state detector at temperature between 30-300 C. Coherent and incoherent scattering cross sections and FWHM (Full width at half maximum) of the elements have been calculated. Temperature-dependent changes of the parameters have been given in the graphical forms. Based on the results obtained, coherent and incoherent scattering cross sections ratios of the elements are dependent on the temperature. It is observed that coherent and incoherent scattering cross sections ratios of Cd, In, and Pb increase with increasing temperature. For Sn, first of all coherent and incoherent scattering cross sections ratios increase, then decrease and increase again respectively. To sum up, coherent and incoherent scattering cross sections ratios tend to increase with increasing temperature. Keywords: coherent and incoherent scattering cross sections ratio, temperature. 36 (01_OP08) Theoretical Molecular Structure, NLO, NMR and HOMO-LUMO Analysis of Isonicotinic Acid (ortho-, meta- and para-Hydroxy-Benzylidene)-Hydrazides Güventürk Uğurlu1, Haydar Yüksek2, Murat Beytur2 and Hacali Necefoğlu3 1 Department of Physics, Kafkas University, Kars, Turkey, gugurlu@kafkas.edu.tr Department of Chemistry, Kafkas University, Kars, Turkey, hhigh61@gmail.com 2 Department of Chemistry, Kafkas University, Kars, Turkey, muratbeytur83@gmail.com 3 Department of Chemistry, Kafkas University, Kars, Turkey,alinecef@hotmail.com 2 The present work is aimed to compare the molecular structural, non-linear optical and NMR– spectra properties of isonicotinic acid (ortho- meta- and para-hydroxy-benzylidene)hydrazides, in gas phase, due to their versatile medical activities and importance. The ground state properties of the title molecules have been calculated employing DFT/B3LYP and HF level of theory using the 6-311++G (d, p) basis set. 1H NMR and 13C NMR chemical shifts calculations have been performed by using the DFT method with B3LYP functional, where the 6-311++G(d,p) basis set was employed. The the highest occupied molecular orbital (HOMO) energy, the lowest unoccupied molecular orbital (LUMO) energy values and nonlinear optical properties such as dipole moment, polarizability and first order hyper polarizability of isonicotinic acid (ortho- meta- and para-hydroxy-benzylidene)-hydrazides have been calculated with HF/ 6-311++G(d,p) and B3LYP/6-311++G(d,p) levels of DFT theory. All computational studies have been performed with the Gaussian 09W program package. Keywords: isonicotinic acid (ortho-, meta- and para-hydroxy-benzylidene)-hydrazides, DFT, HF, NMR 37 (01_OP09) Calculation of K Shell Intensity Ratios and Line Widths of Ti and Some of Its Compounds by Means of 5, 96 keV Energy Oğuz Kağan Köksal1,Gökhan Apaydın 1, Erhan Cengiz 1, Kazım Karabulut 1 1 Karadeniz Technical University, Trabzon, Turkey okoksal@ktu.edu.tr K shell intensity ratios and line widths of pure Ti and some of its compounds have been determined experimentally using an Ultra-LEGe detector with resolution 140 eV at 5.9 keV. The samples were excited 5.96 keV photons emitted from a 55Fe radioisotope source with 50 mCi activity. The experimental values of the K shell intensity ratios have been compared with the experimental and theoretical values available in the literature for pure Ti and line widths have been only compared with a theoretical value for pure Ti. Keywords: EDXRF, K Shell, Intensity Ratio, Line Width, Titanium 38 (01_OP10) Calculation of Gamma Ray Buildup Factors for Some Alloys Ö.Ulusoy, N. Ekinci, E. Kavaz, B. Aygün, E. Cinan Department of Physics, Science Faculty, Atatürk University, 25240, Erzurum, Turkey ozlem.ulusoy89@hotmail.com In this study, mass attenuation coefficient (µ/ρ), effective atomic number (Zeff), electron density (Neff), gamma ray energy absorpsion (EABF) and exposore build-up factors (EBF) have been calculated for B, Cr, Fe, Ta and Re based six alloys over an energy range from 0.015 MeV to 15 MeV, for penetration depths up to 40 mfp (mean free path). The mass attenuation coefficient (µ/ρ), effective atomic number (Zeff), electron density (Neff) have been calculated over a wide energy range from 1 keV to 100 GeV using WinXCOM. Geometric progression (GP) fitting approximation has been used to calculate both EABF and EBF for the six metal alloys. From the present study, it has been concluded that the values of gamma ray energy absorpsion (EABF) and exposore build-up factors (EBF) are very large in the medium energy region and Re, B and Cr alloy acts as best gamma ray shielding material among the selected samples. This study should be useful for radiation shielding design and dose estimation in nuclear power plants. Keywords: Mass attenuation coefficient, Effective atomic number, Electron density, Gamma ray buildup factor 39 (01_OP11) Compton Profile Measurements of N2 at Different Pressures E. Şakar1, A. Gürol2, D. Demir3, and W. Weyrich4 1 Atatürk University, Faculty of Science, Phys. Dept., Erzurum, Turkey Atatürk University, Faculty of Science, Phys. Dept., Erzurum, Turkey 3 Atatürk University, Faculty of Science, Phys. Dept., Erzurum, Turkey 4 Department of Chemistry, University of Konstanz, Fach 721, 78457 Konstanz, Germany erdem@atauni.edu.tr 2 In this study, it has been measured the Compton Profile of the Nitrogen gas at different pressures by using a Compton Profile Spectrometer with an annular Am-241 radioactive source and a HPGe detector. The inelastic scattered -rays from gas molecules in the gas chamber have been measured using a HPGe detector connected to the a Tennelec 244 Amplifier and MAESTRO MCA Software. The gas pressure had been set a manometer before the measurements. The data have been corrected for all unwanted scattering, i.e. from chamber wall, collimator, and etc. Then, the Compton Profile of Nitrogen gases at four different pressure have been determined using a Matlab Code. When the pressure was higher than 1,0 bar it has been found differences (>5,0%) on the Compton Profile values. 40 (01_OP12) Designing a Device for X Ray Mapping: A New Technique N. Ahmadi1, E. Kavaz2, Y. Özdemir3 and M. Ertuğrul 4 1 Islamic Azad University, Marand, Iran, naderahmadi@hotmail.com 2 Atatürk University, Erzurum, Turkey, esrakvz@gmail.com 3 Atatürk University, Erzurum, Turkey, yozdemir25@yahoo.com 4 Atatürk University, Erzurum, Turkey, ertugrul@atauni.edu.tr An energy-dispersive system is described for elemental mapping by X-ray fluorescence spectrometry. The present study describes the design of an X-ray fluorescence spectrometer and presents its performance in elemental mapping applications. The spectrometer is based on a new ring-shaped collimator with a pinhole in the center of it and the Am-241 isotope mounted in the collimator as an X-ray source. The photons was detected by high resolution Si (Li) detector coupled to a multi-channel analyzer and cooled by liquid nitrogen. In this study, the sample was made from pure elemental powders and three types of graphics was plotted. In the first graphic the areas of the elements were shown with a single color. The area of the each element was shown with different color due to the count (intensity) related to the area in second type of graphs. This type of map provides information about the homogeneity or heterogeneity of the elemental distribution. In the third type of graphs for an element, the counts was plotted against the x and y position in three dimension. 41 ORAL SESSIONS 02_Solid State and Nano Physics [02_OP 01] to [02_OP33] 42 (02_OP01) Pulsed Laser Deposition of Y3Fe5O12 (YIG) / Gd3Ga5O12 (GGG) Thin Films M. T. Yurtcan1, U. Soykan1 and S. Atalay2 1 Department of Nanoscience & Nanoengineering, Atatürk University, Erzurum, Turkey, yurtcan@atauni.edu.tr 1 Department of Nanoscience & Nanoengineering, Atatürk University, Erzurum, Turkey, ummugulsumsoykan@gmail.com 2 Department of Physics, Inonu University, Malatya, Turkey, selcuk.atalay@inonu.edu.tr Magnonic Crystals are patterned repeating artificial lattices with changing magnetic properties. Y3Fe5O12 is used in microwave, acoustic, optical, and magneto-optical applications as filters, transmitters and transducers because of their low magnetic (spin-wave) damping. High quality YIG thin films are very important for integrated device applications. We used Pulsed Laser Deposition (PLD) technique to deposit YIG on single crystal Gd3Ga5O12 (GGG) substrates. YIG powder was pressed into a pellet and then sintered as a deposition target. GGG substrates chosen because of their low lattice mismatch with YIG and compatibility. Samples deposited between 50 to 150 mTorr oxygen pressures. X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) techniques were used for characterization. As a result, we found that deposition rate for YIG/GGG is very slow than expected (≈0.09 Ǻ/pulse) and best deposition pressure is 100 mTorr for our fixed conditions. Acknowledgments: This work was supported by TUBĠTAK with the Project number MFAG112T820. 43 (02_OP02) VO2 Films Grown by Magnetron Sputtering for Metal Insulator Transition* G. Aygün1, H. Yüce2, M. Özdemir Köklü3 and L. Özyüzer4 1 Department of Physics, İzmir Institute of Technology, İzmir, Turkey gulnuraygun@iyte.edu.tr 2 Department of Physics, İzmir Institute of Technology, İzmir, Turkey hurriyetyuce@iyte.edu.tr 3 Department of Electrical and Electronics Engineering, Gediz University, İzmir, Turkey mehtap.koklu@gediz.edu.tr 4 Department of Physics, İzmir Institute of Technology, İzmir, Turkey lutfiozyuzer@iyte.edu.tr Vanadium dioxide (VO2) demonstrates metal insulator transition (MIT) property. The transition carries out at nearly 68 °C. VO2 exhibits insulator phase with monoclinic crystal structure below transition temperature, while metallic phase with tetragonal crystal structure above transition temperature. Electrical resistivity of VO2 at MIT changes by a factor of 104 . VO2 has high potential for the applications in microelectronic devices. It is used not only for FET applications, but also for other devices including nonvolatile resistive memories, optical sensors and termochromic smart windows. In this work, c-cut sapphire (Al2O3) and soda lime glass (SLG) were used as substrate. VO2 films were deposited in vacuum chamber by reactive magnetron sputtering technique. The substrates were rotated for the purpose of homogeneous film growth and kept at 500 °C during deposition. The grown films were characterized using various techniques which are X-ray diffraction for identifying atomic and molecular crystal structure, Raman microscopy for observing vibrational and rotational modes, X-ray photoelectron spectroscopy for chemical analysis and elemental composition, and scanning electron microscopy to determine surface topography and composition of the films. Moreover, post annealing processes at different temperatures were done to analyse the resistance of VO2 films grown with different O2/Ar gas ratios. *Work supported by TÜBĠTAK (The Scientific and Technological Research Council of Turkey) with project number 113F349. 44 (02_OP03) Thin Film Metal Mesh Filters for Terahertz Waves L. Özyüzer1,*, Y. Demirhan1, H. Alaboz1, M. A. Nebioğlu2, T. Takan2, H. Altan2, C. Sabah3 1 2 Department of Physics, İzmir Institute of Technology, Urla, 35430, İzmir, Turkey Department of Physics, Middle East Technical University, Çankaya, 06800, Ankara, Turkey 3 Department of Electrical and Electronics Engineering, Middle East Technical UniversityNorthern Cyprus Campus, Güzelyurt, Turkey ozyuzer@iyte.edu.tr In this study, we have investigated the spectral performance of resonant terahertz (THz) bandpass filters which were produced from thin films with a metal-mesh shape. The aforementioned filters were fabricated from titanium, copper and Indium Tin Oxide thin films on quartz substrates by UV lithography with an array of cross-shaped apertures. Since the mesh period, cross-arm length and its width specify the spectral characteristics of the filters, we were able to reveal the performance of these filters experimentally using both a THz time domain spectrometer and a Fourier transform infrared spectrometer (FTIR). A commercial electromagnetic simulation software, CST Microwave Studio, was used to verify the experimental data. The transmission of the filters are in the range 20-55% at their relevant center frequencies. To our knowledge this study is the first to show that fabricated patterns based on ITO thin films can be used to filter THz radiation. Acknowledgements: This work has been supported in part by TUBITAK (Scientific and Technological Council of Turkey) under project number 114F091. The infrastructure of Applied Quantum Research Center (UKAM) was used to perform some parts of the experiments. 45 (02_OP04) Graphene Quantum Dot With a Hydrogenic Impurity Neslihan Gökçek, Bekir Sıtkı Kandemir Ankara University, Faculty of Sciences, Department of Physics, Ankara, Turkey ngokcek@science.ankara.edu.tr Ankara University, Faculty of Sciences, Department of Physics, Ankara, Turkey Bekir.S.Kandemir@science.ankara.edu.tr Graphene based nano-structures are one of the most attractive and active topics studied in physics and material sciences. Among these graphene quantum dots (GQDs), graphene islands of the size typically below 20 nm, are intensively studied systems in this field. In this work we investigate analytically the energy levels of a circular graphene quantum dot in a magnetic field perpendicular to its plane when a hydrogenic impurity placed at the center of it. The calculations are done within the framework of variational method. It is found that the electronic spectrum of graphene quantum dot in a perpendicular magnetic field is affected by hydrogenic impurity. As a result GQDs’ s electronic properties can be controlled by such an impurity. 46 (02_OP05) Investigation of the Homogeneity of Cu2ZnSnS4 Absorber Layer Fabricated by Sputtering and Rapid Thermal Processing M. A. Olğar1,2*, J. Klaer2, E. Bacaksiz1, R. Mainz2, T. Unold2 1 2 Karadeniz Technical University, Department of Physics, 61080, Trabzon, Turkey Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany *Corresponding author maliolgar@ktu.edu.tr Thin film solar cells based on Cu2ZnSnS4 (CZTS) have been considered as an alternative to Cu(In, Ga)Se2 despite of its conversion efficiency over 20 %. Scarcity of In and Ga, toxicity of Se may impose limitations for mass production in the future. CZTS absorber layer is considered one of the most promising p-type semiconductor material due to comprising earth abundant elements, suitable optical band gap (1.4-1.6 eV), and high optical absorption coefficient (>104 cm-1). Lateral and vertical homogeneity of the film are vitally important parameters for high efficiency solar cells. For this purpose, different sequential Cu-Zn-Sn stacked metallic films were deposited on Mo coated glass by DC magnetron sputtering and followed annealing treatment at high temperatures (500 °C-600 °C) with ramping rate 5 °C/sec during 3 minutes by Rapid Thermal Processing (RTP). The effect of the reaction temperature and stacking order on the homogeneity of CZTS films characterized with different methods. Chemical composition of the films were determined by XRF, crystalline structure and phase formation examined by XRD and Raman spectroscopy, and top view and cross-sectional images of the films characterized by SEM. In this way, the most promising stacking order and reaction temperature for compositional homogeneity were determined. Keywords; Thin film solar cells, Cu2ZnSnS4 (CZTS) thin film, DC magnetron sputtering, RTP 47 (02_OP06) Electronic Structure of Bio-Inspired Catalysts in Trapped Intermediate States Özlen Ferruh Erdem Department of Physics, METU, Ankara, Turkey, oferruh@metu.edu.tr Hydrogen will play a crucial role in future renewable energy technologies, it also will enable clean energy storage. Many microorganisms use molecular hydrogen as an energy source (H2 uptake) or protons as an electron sink (H2 evolution) via the hydrogen conversion redox reaction that is catalyzed by hydrogenases. Inspired from nature, synthetic catalysts which mimic the function of the active site of [FeFe] hydrogenases have been developed. Particularly, complexes which accommodate mononuclear iron(I-III) intermediates that feature hydride, phosphine, cyclopentadienyl, and pendant base ligands are of special interest. By means of a theory- supported spectroscopic approach (with FT-IR, EPR, Moessbauer, as well as DFT), it will be shown that not only the metal-core and direct ligands, but also the second coordination sphere have influence on the activity. It will be presented that for an iron hydrido catalysts, the catalytic direction of this class of monoiron compounds can be reversed by rational design of ligands in the first and second coordination sphere of the iron. The investigation of trapped intermediates in their diamagnetic and paramagnetic states provides a comprehensive understanding of the working principles of such model compounds, and leads to newly designed, highly efficient catalysts. 48 (02_OP07) Effect of Polymer Coating on Magnetic Nanocomposites’ Microwave Absorption Properties İ. S.Ünver1, Z. Durmuş2 and H. Kavas3 and B. Aktaş4 1 Gebze Technical University, Kocaeli, Turkey, iunver@gtu.edu.tr 2 Bezmialem Vakif University, İstanbul, Turkey, zdurmus@bezmialem.edu.tr 3 İstanbul Medeniyet University, İstanbul, Turkey, huseyin.kavas@medeniyet.edu.tr 4 Gebze Technical University, Kocaeli, Turkey, aktas@gtu.edu.tr Fe3O4 nanoparticles were synthesized via reflux co-precipitation method and coated with various polymeric media of polypyrolle, polyaniline, and polyhiophene. The increasing crystallinity and lack of other phases were investigated from X-Ray Diffraction experiments. The size of the Fe3O4 NP is obtained below 10 nm and the morphology of samples generally in the form of sphere (Figure 1.). The size distribution of coated samples were investigated by log normal fit of Transmission Electron micrographs. The mean sizes of the coated samples were found as 11.76, 11.51 and 9.98 nm for Fe3O4@PPy, Fe3O4@Pani and Fe3O4@Pthi, respectively. Thermogravometric analyses show the coating amount of polymer is changing with the polymer type and in this increasing order of Pthi, Pani and PPy coating. The room temperature magnetic properties were analyzed and superparamagnetic nature of samples were observed for all samples. Also magnetic hysteric curves prove the TGA results. By coaxial airline method, the dielectric and magnetic properties of samples were measured in the frequency range of 2-18 GHz. The complex dielectric permittivity and permeability (ɛ’, ɛ’’, µ’ and µ’’) of samples were measured and analyzed comparatively. Finally the composites’ magnetic radar absorption performance will be discussed depending on the coating polymer type. 0.40 Fe3O4@Ppy 0.35 Lognormal Fit D= 11.76 w= 0.31 % frequency 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.40 0 0.40 Fe3O4@Pani 0.35 Lognormal Fit D= 11.51 w= 0.41 % frequency 0.30 0.25 4 8 12 16 20 24 28 32 28 32 0.35 Fe3O4@Pthi 0.30 Lognormal Fit D= 9.98 w= 0.27 0.25 0.20 0.20 0.15 0.15 0.10 0.10 0.05 0.05 0.00 0.00 0 4 8 12 16 20 24 Size D (nm) 28 32 0 4 8 12 16 20 24 Size D (nm) Figure 1. The Transmission electron micrograph of Fe3O4 NP and size distribution histograms with log normal fit lines obtained from TEM of Ppy, Pani and Pthi coated samples. 49 (02_OP08) Electrical and Photoelectrical Characteristic Investigation of a New Generation Photodiode Based on Bromothymol Blue Dye Arife Gencer İmer1, Ahmet Tombak2 and Abdulkadir Korkut 1 Department of Physics, Yüzüncü Yıl University, 65080, Van, Turkey, gencerimerarife@gmail.com 2 Department of Physics, Batman, University, Batman, Turkey, tahmet@yahoo.com Bromothymol blue (BTB) with the molecular formula of C27H28Br2O5S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (I-V) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data The obtained results confirmed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance- voltage (C-V), conductance-voltage (G-V) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical & photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer. Keywords: Organic material; Heterojunction; Photoconductor; Barrier height; Ideality factor 50 (02_OP09) Optoelectronics Properties Tunability by Controlled Deformation F. H. Alharbi1,2 , P. Serra1,3 , M.A. Carignano1 and S. Kais1,2,4 1 Qatar Environment & Energy Research Institute, Hamad Bin Khalifa University, Doha, Qatar 2 College of Science & Engineering, Hamad Bin Khalifa University, Doha, Qatar 3 Facultad de Matematica, Astronomıa y Fısica, Universidad Nacional de Cordoba, Cordoba, Argentina 4Department of Chemistry, Physics, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, US Recently, controlling charges in quantum-confined systems has advanced greatly. As known, such control is essential to design and fabricate optoelectronics based on confined systems. In this work, we illustrate how to achieve practically measured electron localization and energy level oscillation in layered systems by external deformation control. The basic idea is that by applying controlled deformation, the system potential is slightly changed and henceforth the quantum states are changed consequently. The used deformations means are voltage biasing and pressure across layered systems. Certainly, other methods are possible as well. As for the analysis, it is performed both numerically and analytically. For the illustration, three different systems are studied; namely, a graded quantum well with abstract potential deformation, a symmetric multiple quantum well under biasing voltage, and a layered 2-dimensional hybrid perovskites where the deformation is applied by a pressure. The analysis shows that energy level oscillations are achievable and manipulatable in the studied systems by controlled deformations. Also, it is shown that the obtained oscillations are concomitant with level avoided crossings and that the deformation causes an alteration in the spatial localization of the charges. 51 (02_OP10) Ionic Conductivity of Al doped Li0.5-XLa0.5Ti1-XO3 Electrolyte Mehtap Özdemir1, Sena Gülen2, Seda Ulusoy3, Gülnur Aygün4, Lütfi Özyüzer5 1 Department of Electrical and Electronics Engineering, Gediz University, İzmir, Turkey, mehtap.koklu@gediz.edu.tr 2 Department of Physics, İzmir Institute of Technology, İzmir, Turkey, senagulen@iyte.edu.tr 3 Department of Physics, İzmir Institute of Technology, İzmir, Tunrkey, sedaulusoy@iyte.edu.tr 4 Department of Physics, İzmir Institute of Technology, İzmir, Turkey, gulnuraygun@iyte.edu.tr 5 Department of Physics, İzmir Institute of Technology, İzmir, Turkey, lutfiozyuzer@iyte.edu.tr Li-ion batteries have potential applications in portable electronic devices, power source for space vehicles and electrical cars because of its high energy, long life cycle, eco-friendly high safety and reliability and non-combustible properties. Especially, thin film Li-ion batteries have high specific energy and power, high energy efficiency, better performance at high temperatures and slow discharge characteristics. Therefore, in this work, we prepared a series of Al doped lithium lanthanum titanate (LLTAlO) thin film electrolytes using LLTAlO targets in a Ar atmosphere by radio frequency (RF) magnetron sputtering technique. We also deposited LLTO thin films in an Ar atmosphere under the same conditions as a reference for comparison. The morphology and the composition of the thin films were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The chemical state and atomic concentration were determined by X-ray photoelectron spectroscopy (XPS). Moreover, ionic conductivity was determined by Impedance Analyzer. Acknowledgement: This research is supported by TUBITAK (Scientific and Technical Research Council of Turkey) with project number 114M044. 52 (02_OP11) The Electronic Structure of ABC-Stacked Trilayer and Multilayer Graphene and Trigonal Warping by Using Density Functional Theory Celal Yelgel Recep Tayyip Erdoğan University, Vocational School of Technical Sciences, 53100 Rize, Turkey, celal.yelgel@erdogan.edu.tr The electronic structures of ABC-stacked trilayer and multilayer graphene are extensively studied by using the density functional theory and planewave pseudopotential method. The dispersion relations of the highest valence and the lowest conduction bands near the K point in the Brillouin zone are characterised by a mixture of cubic, parabolic, and linear behaviours in the ABC-stacked trilayer graphene. When the number of graphene layers is increased to more than three, the separation between these valence and conduction bands decreases up until they touch each other. We find these bands at K point for multilayer graphene are derived only from two basis carbon atoms on top and bottom layers that they lie at the centre of below or above the graphene layer. The most inner pair of π/π* bands for N=5 and N=6 multilayer case show flat behaviour close to the K point. The trigonal warping of energy bands slightly above the Fermi level are clearly observed for N=3 trilayer by using our energy contour plot. However, this is not prominent for the N>3 multilayer cases. 53 (02_OP12) Exchange Bias: Bulk or Interface? Ali C. Başaran Gebze Technical University, Physics Department, 41400, Kocaeli, Turkey Exchange bias is present in some ferromagnet / antiferromagnet bilayers and used in applications such as magnetic recording, sensing, and spintronic devices. It is defined as a unidirectional anisotropy due to exchange coupling between two magnetic materials. Since the relevant length scales are very short, exchange bias is generally assumed to be an interfacially governed property. Consequently, most attempts of tailoring the effect in magnitude or direction are based on control of the magnetic structure in direct proximity to the interface. However, the contributions of magnetic structures in regions away from the interface remain ambiguous and need to be investigated. We study the individual contributions of each region of the ferromagnetic/antiferromagnetic bilayer on the exchange bias. We consider the exchange bias effect in magnetic thin films as defined by the three components of the spin structure: i) at the ferromagnetic/antiferromagnetic interface, ii) in the antiferromagnetic layer, and iii) in the ferromagnetic layer. We performed experiments to address individually these three constituents and found that the exchange bias is significantly affected by the bulk of both the antiferromagnetic and the ferromagnetic layers. [1, 2] [1] A. C. Basaran, T. Saerbeck, J. de la Venta, H. Huckfeldt, A. Ehresmann, and I. K. Schuller, Appl. Phys. Lett. 105, 072403 (2014). [2] R. Morales, A. C. Basaran, J. E. Villegas, D. Navas, N. Soriano, B. Mora, C. Redondo, X. Batlle, and I. K. Schuller, Phys. Rev. Lett. 114, 097202 (2015). 54 (02_OP13) The Electrical Properties of Atomic Layer Deposited Ultra Thin HfO2 Interfacial Layer Grown on GaAs-based MIS Structures Over a Wide Measurement Temperature A. Karabulut1, A. Turut2 and N. Bıyıklı3,4 1 Sinop University, Faculty of Engineering, Department of Electrical and Electronics Engineering, 57000 Sinop, Turkey, akerimkara@gmail.com 2 İstanbul Medeniyet University, Faculty of Sciences, Engineering Physics Department, 34730 İstanbul, Turkey, amecit2002@yahoo.com 3 Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, 06800 Ankara, Turkey,biyikli@unam.bilkent.edu.tr 4 National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, 06800 Ankara, Turkey, biyikli@unam.bilkent.edu.tr We have prepared Au/Ti/HfO2/n-GaAs MIS structures using by atomic layer deposition (ALD) technique for interfacial layer, and DC magnetron sputtering tecnique for Schottky contact. The HfO2 interfacial layer has been grown on the n-type GaAs substrate, whose back surface is ohmic contact. The film thickness of the HfO2 layer was 5 nm, and Au/Ti metallic layers have been deposited on the atomic layer HfO2 layer, and the thickness of the metalic layers was 50 nm. A good few different methods are used to generate the gate oxide layer in the semiconductor devices. The ALD is one of thin film fabrication techniques. Some researchers have reported that the ALD is a surface controlled layer-by-layer process for the deposition of thin films with atomic layer accuracy.After fabrication process, the MIS structures have been characterized by the current-voltage (I-V) curves in the temperature range of 60-400 K. Temperature dependent parameters of the MIS diode such as ideality factor and barrier height have been determined from the (I-V) characteristics. 55 (02_OP14) Modeling Approach to Electric Field-Induced Switching Mechanism in Vanadium oxide Morteza Vafadar Yengejeh1 and Hasan Efeoğlu1,2,3 1 Department of Nanoscience and Nanoengineering, Atatürk University, Erzurum, Turkey, mortezavafadar@gmail.com 2 Department of Electrical & Electronics Engineering, 3 Nanoscience-Nanoengineering and Research Application Centre, Atatürk University, Erzurum Turkey Metal-insulator transition (MIT) in metal oxides has been a topic of interest for nearly half of a century, yet the primary mechanism of MIT is still under debate. Various types of MIT may be triggered by external parameters such as temperature, pressure, doping and magnetic field. Recent theoretical and experimental reports have suggested that this transition can also be triggered by a threshold electric field. Exploiting this phenomenon, can lead to an entirely new class of electronic switches. Vanadium oxide (VOx), possessing MIT characteristic, shows threshold conductivity switching behavior, the nature of which is subject to debate. In this work, relying on our pervious experimental results, we present a theoretical investigation into the relationship between current and voltage of W/VOx/W device in which, the threshold switching results in two distinct regimes of device I-V curve: nonlinear regime for when the device is in insulating state below the threshold voltage (Vth), and linear regime of filamentary behavior above the Vth. Our experimental results imply independence of the Vth from the temperature of the device. Also we observe, to some degree, an agreement of nonlinear I-V characteristic predicted by a pure theoretical study done by another group (Heidrich-Meisner et al., 2010). This work financially supported by The Scientific and Technology Research Council of Turkey, Grant No. 111T217 56 (02_OP15) Process and characterization of Ni doped ZnO Nanoparticles Arife Efe1, Adem Akdağ1, H. Feyzi Budak1, Merve Büyükaydın1, Murat Can1, Güven Turgut2 and Erdal Sönmez3 1 Department of Nanoscience and Nanoengineering, Graduate School of Natural and Applied Sciences, Atatürk University, Erzurum, 25240, Turkey, arifefe_90@hotmail.com 2 Department of Physics, Faculty of Science, Erzurum Technical University, 25240, Erzurum, Turkey, guventrgt@gmail.com 3 Department of Physics Education, K. K. Education Faculty, Atatürk University, Erzurum, 25240, Turkey, erdalsonmez@gmail.com Zinc oxide nanoparticles are in great demand due to their unique catalytic, electrical, and optical properties as well as to be low cost and very wide field of use. The use of zinc oxide is increased in many industrial commercially because of the changing possibility on the way by asking which structural, electrical and optical properties using suitable additive materials. In this study, Ni doped ZnO nanoparticles produced by using the methods of reduction thought having materials of the Zn(SO)4, Ni(SO)4 ve NaOH. XRD, EDS, SEM and TEM used for making analyzing of structural and dimensional of particles. Clearly, in the analyzing of XRD observed in the pick which have Ni and 36.30. According to the results of EDS provided with the method of reduction the ratio of 1.9 percent Ni as weighting. 57 (02_OP16) Physical Properties of Perovskite Orthorhombic RbCdBr3 Structure Bahattin Erdinç1, Melike Dede2 1 Yüzüncü Yil University,Van, Turkey bahattinerdinc@yyu.edu.tr Yüzüncü Yil University,Van, Turkey melikedede65@gmail.com 2 We investigated some physical properties such as structural and volume optimizations, energy band structure, density of states of electrons and optical properties for RbCdBr3 compound using density functional theory under local density approximation and generalized gradient approximation in ABINIT package program. The calculated results show that the energy band structure of this crystal has an indirect band gap and band gap was found as 2.69 eV from  to T-Z high symmetry points. Besides, the real and imaginary parts of complex dielectric function and optical constant such as refractive index, energy-loss functions for volume and surface, extinction, reflectivity and absorption coefficients along the crystallographic axes are investigated. The obtained results are in agreement with the experimental results. 58 (02_OP17) Characteristic Diode Parameters of Thermally Annealed Ni/n-GaAs Schottky Contacts Over a Wide Measurement Temperature Range Abdulmecit Türüt1, Nezir Yıldırım2* and Hülya Doğan3 1 İstanbul Medeniyet University, Faculty of Sciences, Department of Engineering Physics, 34720 İstanbul, Turkey, abdulmecit.turut@medeniyet.edu.tr 2 Bingöl University, Faculty of Sciences and Arts, Department of Physics, 12000 Bingöl, Turkey, nyildirim@bingol.edu.tr 3 Cumhuriyet University, Faculty of Engineering, Department of Electric and Electronics Engineering, 58140 Sivas, Turkey, hdogan@cumhuriyet.edu.tr The as-deposited Ni/n-GaAs Schottky diodes (SDs) have been prepared by DC magnetron sputtering deposition. Then, these SDs have been thermally annealed at 600 0C and 700 0C. After each thermal annealing, their I-V characteristics have been measured in the sample temperature range of 60-320 K with steps of 20 K. It has been seen for the non-annealed and annealed samples that the barrier height (BH) increased and ideality factor decreased with increasing sample temperature. The experimental data are consistent with the presence of an inhomogeneity of the BHs. Therefore, the temperature-dependent I-V characteristics of the diodes have been discussed in terms of the single and double-Gaussian distribution model. Moreover, it has been seen that the BH decreased and ideality factor increased with increasing annealing temperature at each sample temperature. Figure 1. a) Zero-bias apparent barrier height versus measurement temperature curves, b) ideality factor versus measurement temperature curves for the annealed and non-annealed Ni/n-GaAs Schottky diodes. (online color) 59 (02_OP18) Removal of Dye From Aqueous Solutions Using Magnetite Nanoparticles bye Advanced Oxidation Process Ö. Açışlı and E. Doğan Atatürk University, Oltu Earth Sciences Faculty, Department of Petroleum and Natural Gas Engineering, Erzurum, Turkey, ozkan.acisli@atauni.edu.tr In this study, we used the magnetic separable Fe3O4 nanoparticles as heterogeneous catalyst to accelerate the reaction rate due to their large specific surface area and high surface reactivity. The surface area of the magnetic particles was reached the nanoscale diameter with ball-mill method throughout 8 hours. Fe3O4 magnetic nanoparticles (MNPs) was investigated degradation efficiency of dye from aqueous solutions by heterogeneous fenton process. For this purpose, MNPs were characterized by SEM, XRD and TEM techniques. The result of XRD show that the natural magnetite is quite pure. It is observed that the particles of magnetite reached nano-size from SEM and TEM analysis. And optimal parameters were determined. Also, it was observed that the removal efficiency of dye was significantly increased with the addition of H2O2 in acidic media. 60 (02_OP19) Growth and Characterization of GaN thin film by Thermionic Vacuum Arc (TVA) A. Mantarcı1, M. Kundakçı2 and E. Erdoğan3 1 Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş, Turkey a.mantarci@alparslan.edu.tr 2 Department of Physics, Faculty of Science, Atatürk University, Erzurum, Turkey kundakci@atauni.edu.tr 3 Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş, Turkey e.erdogan@alparslan.edu.tr GaN has direct band gap (3.4 eV), one of the significant III-Nitride materials having many useful device applications such as, LED, detectors, high electron mobility transistors, lasers and sensors, and is convenient for optoelectronic device applications. It can be grown great number of techniques including Molecular Beam Epitaxy (MBE), Sputter, Pulsed Laser Deposition (PLD), and Chemical Vapor Deposition (CVD). GaN thin film grown on silicon substrate by thermionic vacuum arc (TVA) technique has been investigated. Fast deposition rate can be seen as the main advantage of this method. When studied GaN thin film, growing conditions were following: current of filament (18 A), operating pressure (10-6 Torr), growth time (40 sec.) In helping with Ultraviolet-Visible Spectroscopy (UV/VIS), film’s optical properties were found. By using Four-terminal resistance method, electrical characterization of the material at dark and illumination condition has successfully finished. Scanning electron microscopy (SEM) has been studied to determine the structure and surface morphology of the material. Energy dispersive X-ray spectroscopy (EDAX) has been worked to comprehend elemental analysis characterization of the film. X-ray diffractometer (XRD) have been used to analyze structure of the film. 61 (02_OP20) Structural Characterization of InSe:Zn Layer Semiconductor Grown by Bridgman/Stockbarger Technique A. Gürbulak1, A. Ashkhasi1, M. Şata1 F. Ş. Özçelik1 and S. Duman2 1 Atatürk University, Science Faculty, Physics Department, 25240 Erzurum, Turkey 2 Erzurum Technical University, 25240 Erzurum, Turkey Zn doped InSe (InSe:Zn) single crystal has been grown by using the Bridgman/Stockbarger method. There is no cracks or voids on the surface of ingots. Samples have been cleaved along the cleavage planes (001). The freshly cleaved crystals have mirror-like surfaces even without using mechanical treatment. The structure and lattice parameters of the InSe:Zn semiconductor has been analyzed using a X-ray diffractometer (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. Zn doping causes a significant increase in the XRD peak intensity. It is found that the InSe:Zn crystal has hexagonal structure and calculated lattice constants are found to be a=b=5.845 Å and c= 16.788 Å for InSe:Zn. The crystallite sizes has been calculated to be 42-155 nm for InSe:Zn crystal from the SEM results. The residual strain (6.16x10-4 lin-2m -4 ) and dislocation density (2.98x1015 lin m-2 ) values have been calculated using powder XRD results (004), respectively. Zn doping causes a significant increase in the XRD peak intensity. The crystallite sizes have been calculated to be 50-125 nm for InSe:Zn from the SEM results. It has been observed from EDX results that InSe contains In=57.04 %, Se =38.46% and O= 4.50%, respectively. These results are in a good agreement with the ones obtained from EDX analysis. Keywords: InSe:Zn, layer crystals, structural analysis. 62 (02_OP21) Physical Properties of Honeycomb BiTeCl Mehmet Nurullah Seçuk1, Harun Akkuş2 1 Yüzüncü Yil University,Van, Turkey m.nurullahsecuk@yyu.edu.tr 2 Yüzüncü Yil University,Van, Turkey harunakkus@yyu.edu.tr From physical properties of double-layer honeycomb BiTeCl crystal electronic, thermodynamic and elastic ones have been investigated using density functional theory under the generalized gradient and local density approximations in this study. Electronic properties were studied without spin-orbit interaction and good agreement was found with theoretical studies without SOI. Ground state properties of new-type ferroelectric BiTeCl such as lattice parameters, electronic total DOS, partial DOS and electronic band structure, change of Helmholtz free energy, internal energy, entropy and constant volume specific heat by increasing temperature, elastic stiffness and compliance constants, stability conditions and related physical properties were studied in detail. 63 (02_OP22) The Current–Voprage (I–V) and Capacitance–Voltage (C-V) Characterizatics of the E Au/poly(3-PHMP)/p-Si/Al Junction Device A. R. Deniz2, Z. Çaldıran1, H. Ö. Demir3 and Ş. Aydoğan1 1 Department of Physics, Faculty of Science, Atatürk University, Erzurum, Turkey Department of Electrical and Electronics Engineering, University of Hakkari, Hakkari, Turkey 3 Department of Chemistry, Faculty of Science and Arts, K. S. İ. University, Kahramanmaraş, Turkey alirizadeniz@hakkari.edu.tr 2 In this study, Au/poly (3-PHMP)/p-Si/Al junction device was obtained with using the poly(phonexy-imine) polymer material and electrical characterization of this device was performed with current-voltage (I-V) and capacitance-voltage (C-V) measurements. After chemical cleaning process of p-Si crystals, Al metal was enlarged on the lusterless surface of crystals by vaporizing and poly (phonexy-imine) polymer materials are coated on other surface of crystals with spin coating method. Then, Au metal was vaporized on the poly (phonexy-imine) polymer materials so, Au/ poly(3-PHMP)/p-Si/Al junction device was obtained. Also, the poly (phonexy-imine) polymer materials have been characterized by using SEM. In the room conditions, the basic diode parameters of Au/poly(3- PHMP)/p-Si/Al junction device were calculated with current-voltage (I-V) and capacitance-voltage (C-V) measurements. The ideality factor (n) and barrier height (Φb) values were calculated from I-V characteristics of device with Thermionic Emission method. These calculations were repeated for the other devices with the same method. When the calculated parameters were determined, we can say the poly (phonexy-imine) polymer material is coated uniformly on the surface of Si crystals. At the room temperature diffusion potential, barrier height, Fermi energy level and donor concentration parameters have been determined from linear 1/C2-V curves with reverse bias between 100-1000 kHz frequency. Figure 1. The log (I–V) characteristics of the Au/poly(3-PHMP)/p-Si/Al junction device and Chemical Structure of poly(3-PHMP) 64 (02_OP23) Reactively Sputtered Cu2ZnTiS4 Thin Films as a New Absorber Layer for Solar Cells Y. S. Ocak1, M. F. Genisel2, M. Tokuş3, and A. Tombak4 1 Department of Science, Faculty of Education, Dicle University, Diyarbakır, Turkey, yusufselim@gmail.com 2 Department of Science, Faculty of Education, Dicle University, Diyarbakır, Turkey, mfgenisel@dicle.edu.tr 3 Department of Physics, Institute of Natural &Applied Science, Dicle University, Diyarbakır, Turkey, umut-1223@hotmail.com 4 Department of Physics, Faculty of Art & Science, Batman University, Batman, Turkey, tahmet@yahoo.com Cu2ZnSnS4 (CZTS) compound has a direct band gap of 1.5 eV and high absorption coefficient (104 cm-1) and can be used as a promising alternative material. Because it has not contained rare and expensive elements, CZTS has the potential for low-cost commercial systems. In recent years, the interest on CZTS thin films and their usage in the fabrication of solar cell have increased geometrically. Up to now, CZTS thin films and CZTS based solar cells have been formed using various growing methods. Obtaining of CZTS phase and stoichiometry are the main problems in the formation CZTS thin films. It is very difficult to overcome these difficulties without controlled coating. It is possible to overcome these difficulties by reactive co-sputtering technique. Furthermore, usage of different elements in the growth of CZTS thin films and CZTS based solar cells is becoming one of the exiting topics for researchers. Cu2ZnTiS4 (CZTiS) thin films were formed on glasses by reactive co-sputtering technique and their structural, electrical and optical properties will be analyzed depend on sputtering conditions in order to use of CZTiS thin films in PV systems. Acknowledgement: This study is supported by TUBITAK with 114F363 Grant Number. 65 (02_OP24) Magnetron Sputtered WS2; Optical and Structural Analysis Y. Koçak1, Y. Akaltun2 and E.Gür3 1 2 Department of Physics, Erzurum, Turkey, yusuf.kocak12@ogr.atauni.edu.tr Department of Electric Electronic Engineering, Erzincan, Turkey, yakaltun@erzincan.edu.tr 3 Department of Physics, Erzurum, Turkey, emregur@atauni.edu.tr The remarkable properties of graphene have renewed interest in inorganic, transition metal dichalgogenits (TMDC) with unique electronic and optical attributes. Transition Metal Dichalgogenits (TMDC) such as MoS2, MoSe2, WS2 and WSe2 have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. So, fabrication and analysis of these films are important for new generation devices. In this work, polycrystalline WS2 films were prepared by radio frequency magnetron sputtering on n-Si(100), n-Si(111), p-Si(100), glass and fused silica substrates. The structure, morphology, optical and electrical properties were investigated as a function of film thickness and RF power. From the XRD analysis it has been observed that along with some parent WS2 peaks. In the films, (002) peak is stronger that peak is standard of 2H-WS2 structure as a well-crystallized. We observed (100), (101), (110), (008) in addition. Raman spectra of the WS2 show that there are two dominant peaks at 351 cm-1 (in-plane phonon mode) and 417 cm-1 (out-of-plane phonon mode). XPS Analysis of the films has shown that binding energy and the intensity of tungsten 4f shells shifts by depending on the depth of the films which indicates the change in the binding environment and concentration of the W by depth. Keywords: TMDC, magnetron sputtering, XRD, Raman, XPS 66 (02_OP25) Density Functional Theory Study of Structural, Elastic, Electronic, and Phonon Properties of LiZnP F. Soyalp Yüzüncü Yıl University, Faculty of Education, Theoretical Physics Research Laboratory, Van, Turkey, fsoyalp@yyu.edu.tr We have studied the structural, elastic, electronic and phonon properties of LiZnP in the α phase by employing the plane wave pseudopotential method based on density functional theory, within the local density approximation. In order to calculate the ground states properties of LiZnP, the total energies were obtained in α, β and γ phases for different volumes around the equilibrium cell volume V0. The total energy results were shown that α phase has the lowest energy curve. Therefore, it is clear that the α phase is more stable than the β and γ phases. The lattice constant of this material in α phase is found to be 5.588 Å, which compares very well with the experimental value of 5.885 Å. The second-order elastic constants, the electronic band structures and the related total and partial density of states are presented. The phonon dispersion curves and the phonon density of states are calculated using the Density Functional Perturbation Theory. This work was supported by the Yüzüncü Yıl University Research Project Unit under Project No. 2015-HIZ-EF307 67 (02_OP26) Growth Conditions Effects on the H2 and CO2 Gas Sensing Properties of Indium Tin Oxide S. Işık1, O. Çoban2, C. Shafai3, E. Gür4, and S. Tüzemen5 1 Atatürk University, Erzurum, Turkey, sadnaisik@gmail.com Atatürk University, Erzurum, Turkey, omercoban@atauni.edu.tr 3 University of Manitoba, Winnipeg, Canada, cyrus.shafai@umanitoba.ca 4 Atatürk University, Erzurum, Turkey, emregur@atauni.edu.tr 5 Atatürk University, Erzurum, Turkey, stuzemen@atauni.edu.tr 2 Indium Tin Oxide (ITO) thin films are a transparent conducting wide bandgap oxide. The optical, structural and morphological properties of sputtered ITO thin films was investigated using X-ray diffraction spectroscopy (XRD), Scanning electron microscopy (SEM), Energy Dispersive Spectroscopy (EDX) and optical absorption techniques. These measurements revealed that the oxygen gas percentage present in the ITO film deposited by RF magnetron sputter deposition showed systematic variation of its band gap, crystal orientation, growth rate, figure of merit and dominant XRD peaks. All the thin films were grown at room temperature. It has been observed that different growth regimes resulted in different optical band gap, which was found to be between 3.46 and 4.13 eV. In addition, the thin films showed transmittance values over 90% between 400nm and 1100nm. In particular, at 450 nm wavelength the measured transparency and resistivity were 96% and 13.7 Ω𝒄𝒎 respectively, with the O2 content of 11.7%. The crystal structure morphology found by XRD showed dominant peaks as (400) and (441). Once characterization of the films was done, H2 and CO2 resistive gas sensors were fabricated by depositing the ITO film on top of aluminum interdigitated contacts, which were previously fabricated by lithography and etching. These devices showed reasonable sensitivity for pure H2 and CO2 at over 50 0C. Maximum response obtained for H2 was 22% with a response time of 92.3s and recovery time of 24.2s. A correlation was found between the thin film properties of the ITO and its sensing capability for H2 and CO2, which are of importance in many fields such as automotive, energy, biological and health-related applications. 68 (02_OP27) Structural and Morphological Properties of Al Doped ZnO Nanoparticles Adem Akdağ1, Arife Efe1, Hasan Feyzi Budak1, Merve Büyükaydın1, Murat Can1, Güven Turgut2 and Erdal Sönmez3 1 Department of Nanoscience&Nanoengineering, Graduate School of Natural and Applied Sciences, Atatürk University, Erzurum, 25240, Turkey, aakdag09@gmail.com 2 Department of Physics, Faculty of Science, Erzurum Technical University, 25240, Erzurum, Turkey guventrgt@gmail.com, 3 Department of Physics Education, K. K. Education Faculty, Atatürk University, Erzurum 25240, Turkey, erdalsonmez@gmail.com Zinc oxide nanoparticles are in great demand due to their unique catalytic, electrical, and optical properties as well as to be low cost and very wide field of use. The use of zinc oxide is increased in many industrial commercially because of the changing possibility on the way by asking which structural, electrical and optical properties using suitable additive materials. In this study, Al doped ZnO nanoparticles produced by using the methods of reduction thought having materials of the Zn(NO3)2,6H2O, AlCl3 and NaOH. XRD, EDS, SEM and TEM used for making analyzing of structural and dimensional of particles. Clearly, in the analyzing of XRD observed in the pick which have Al and 36.220. According to the results of EDS provided with the method of reduction the ratio of 0.3 percent Al as weighting. 69 (02_OP28) Observation of Unexpected Exchange Bias in FM/NM/FM Multilayers B. Kocaman, M. Ertaş, K. Yıldız, L. C. Arslan, B. Aktaş and Ali C. Başaran Gebze Technical University, Physics Department, 41400 Gebze Kocaeli, Turkey Exchange bias (EB) is one of the phenomena between ferromagnetic (FM) and antiferromagnetic (AF) layers due to the exchange coupling at the interface. The effect results in a shift of the magnetic hysteresis loops when the film is grown in a magnetic field or cooled in a field below the Neel temperature (TN) of the AF. In this study, we will present extensive experimental results on Co/Cu/Co multilayers grown by magnetron sputtering. The structural properties were investigated by x-ray reflectivity that shows a high quality of the layered structure. Vibrating sample magnetometry and ferromagnetic resonance measurements at room temperature show the existence of an in-plane magnetic anisotropy that is probably induced by the growth geometry. Magnetic and electrical measurements in a wide range of temperature were carried out by the traditional methods and revealed that the films have a large EB below 100 K. This was unexpected since there is no grown AF layer in our films. We speculate that the EB is induced by naturally oxidation of the top Cobalt layer that turns out to be act as an AF. We will include more detailed analysis of EB properties in these multilayer thin films. This study is supported by the The Scientific and Technological Research Council of Turkey (TUBITAK) under Grant No. 114F359. 70 (02_OP29) Na Doped n-CdS/p-Si Solar Cell G. Öztürk1, V. Nevruzoğlu1, E. F. Keskenler1 and M. Tomakin1 1 Recep Tayyip Erdoğan University, Rize, Turkey, gokturkozturk@yahoo.com; vagif.nevruzoglu@erdogan.edu.tr; keskenler@gmail.com; murattomakin@yahoo.com Pure and Na doped CdS thin films were deposited by chemical bath deposition technique. NCdS/P-Si heterojunction and effects of Na doping on structural, optical and electrical properties of CdS thin films were investigated. Crystal structure of all CdS thin films was determined as cubic with (111) preferred direction. High Na doping detoriated crystal structure and amorphous crystal structure obtained for 3% Na doping. The grains of all CdS films were nanosize (that decreased from 7 nm to 5 nm) and grains show homogeneous size and more closed packet structure with Na doping. All samples had high band gap for CdS (2.42 eV) due to quantum size effect and band gap of the samples was increased 3.65 eV to 3.84 eV as a function of Na content. Na doped CdS samples had higher resistivity and carrier concentration than that of un-doped CdS. Ideality factors of n-CdS/p-Si heterojunctions were greater than unity due to nanostructere CdS, which indicates that the diode has nonideal behaviour. It was determined that photovoltaic behaviour of n-CdS/p-Si prepared with high Na doped CdS dependent on different semiconductor structure (such as Na2SiO3) occurred interface of CdS and Si. 71 (02_OP30) InGaN Thin Film Deposition on Si(100) and Glass Substrates by Termionic Vacuum Arc E. Erdoğan1, M. Kundakçı2 and A. Mantarcı3 1 Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş, Turkey e.erdogan@alparslan.edu.tr 2 Department of Physics, Faculty of Science, Atatürk University, Erzurum, Turkey kundakci@atauni.edu.tr 3 Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş, Turkey a.mantarci@alparslan.edu.tr Group-III nitride semiconductors covering infrared, visible and ultraviolet spectral range has direct band gaps changing from 0,7 eV (InN) to 3,4eV (GaN). LEDs emit red, blue, green light, ultraviolet (UV) laser diodes (LD), UV light detectors and high power electronic devices are obtained and commercialized based on group-III nitride materials. InGaN semiconductor can be deposited by different techniques such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD). In this study, InGaN thin films were prepared on Si and glass substrates as well as on GaN layer by termionic vacuum arc (TVA) which is a plasma asisted thin film deposition technique. The film was deposited at 106 torr working pressure, 18A filament current. Plasma was produced at 200 V with 0,6A plasma current. The purpose of this research is to investigate the properties of InGaN thin films. X-ray diffraction (XRD) spectrophotometer was used to analyze microstructure of the deposited films. Scanning electon microscopy (SEM) were used for surface morphology characterizations. Compositional analysis was done by energy dispersive X-ray spectroscopy (EDAX). The electrical resistivities of InGaN films were measured using a four-probe method under illumination and darkness. The optical properties of the films have been studied via absorption measurements with ultraviolet-visible spectroscopy (UV/VIS) in the wavelength 200-1100 nm. 72 (02_OP31) Effects of Post Annealing on I-V-T Characteristics of (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes Abdullah Akkaya1 and Enise Ayyıldız2 1 Ahi Evran University, Mucur Technical Vocational Schools, Tech. Prog. Dept., 40500 Mucur/Kırşehir, Turkey, abdullah.akkaya@ahievran.edu.tr 2 Erciyes University, Science Faculty, Physics Dept., Talas Yolu 38039 Kayseri,Turkey, enise@erciyes.edu.tr Post annealing is a simple, effective and suitable method for improving the diode parameters, especially when the used chemically stable substrates like Si, III-N and ternary alloys. In our work, we were applied this method to (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes (SBDs) and investigated by temperature-dependent current-voltage (I-V-T) characteristics at optimum conditions. Optimum annealing temperature was 600°C, which it’s determined with respect to have a highest barrier height value. The temperature-dependent electrical characteristics of the annealed at 600°C (Ni/Au)/Al0.09Ga0.91N SBDs were investigated in the wide temperature range of 95-315K. The diode parameters such as ideality factor (n) and Schottky barrier height (Фb0) were obtained to be strongly temperature dependent. The observed variation in Фb0 and n can be attributed to the spatial barrier inhomogeneities in Schottky barrier height by assuming a triple Gaussian distribution (TGD) of barrier heights (BHs) at 95-145K, 145-230K and 230-315K. The modified Richardson plots and T0 analysis was performed to provide an experimental Richardson constants and bias coefficients of the mean barrier height. Furthermore, the chemical composition of the contacts was examined by the XPS depth profile analysis. Keywords: AlGaN, Schottky diode, I-V characteristics, thermal annealing, inhomogeneous barrier height. Acknowledgements: "This work was supported by the Ahi Evran University Scientific Research Projects Coordination Unit. Project Number: MMY.E2.16.001, Scientific and Technological Research Council of Turkey (TÜBĠTAK) under the Grant of 110T369 and Scientific Research Projects Unit of Erciyes University under the Grants of FBD-10-3308 and FDD-2012-4124 EÜBAP. The authors are grateful to TÜBĠTAK, Ahi Evran University and Erciyes University for their financial support" 73 (02_OP32) Structural and Electrical Properties of Cd Implanted GaTe Single Crystals Grown by Bridgman Technique M. Şata 1, B.Gürbulak1, A. Ashkhasi1, S. Duman2, M. kundakçi, and G. Turgut2 1Department of Physics, Faculty of Sciences, Atatürk University, 25240, Erzurum, Turkey 2Erzurum Technical University, Erzurum, Turkey p-GaTe:Cd crystal was grown in our crystal growth laboratory by using a modified Bridgman–Stockbarger method. Structural properties of crystals (GaTe:Cd) has been studied by means of Scanning electron microscopy (SEM), energy dispersive X-rays (EDX) techniques. The effect of annealing temperatures at (100, 200, 300, 350, 400, 500, 600 and -ray diffraction (XRD). XRD measurements indicate that there is an increase in peak intensities at b = 10.47 Å, c = 4.09 Å which correspond to a monoclinic structure exhibiting C12/m (12) space-group symmetry. The crystallite size has been calculated to be 490- 980 Å for GaTe from the SEM result. It has been observed from EDX result that GaTe contains Ga=36.62 %, Te =63, 33% and O= 0.05 %. Then Zn/p-GaTe Schottky diode has been fabricated. The temperature dependence of current–voltage (I–V) characteristics of Zn/p-GaTe Schottky diode has been investigated in the temperature range of 40–360 K with a temperature step of 10 K under dark conditions. The forward I–V characteristics have been analyzed on the basis of standard thermionic emission theory. It has been shown that the ideality factor increases while the barrier height decreases with decreasing temperature. Keywords: Structural and Electrical Properties GaTe:Cd Single Crystals 74 (02_OP33) Silicon Nitride Nanostructures Prepared by Reactive Sputtering Using Closed-Field Unbalanced Dual Magnetrons Oday A. Hammadi 1*, Mohammad K. Khalaf 2, Firas J. Kadhim 3 1 Department of Physics, College of Education, Al-Iraqia University, Baghdad, Iraq oday.hamadi@yahoo.com 2 Center of Applied Physics, Ministry of Science and Technology, Baghdad, Iraq 3 Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq In this work, silicon nitride nanostructures were prepared by a reactive sputtering technique employing a novel design of closed-field unbalanced dual magnetron (CFUBDM) system. The optical properties of the prepared nanostructures were studied by their absorption and transmission spectra in the range of 200-800nm. As well, the structural properties of these structures were studied to determine the optimum geometry of the employed CFUBDM configuration. The produced Si3N4 nanostructures showed high absorption in the ultraviolet wavelength region (<200nm) in addition to an absorption band centered at 389nm. The energy gap of the prepared samples was found to be 5.2eV of allowed and direct type. Structural results showed that the prepared samples were amorphous with average particle size of 2030nm, average particle diameter of 99.22 nm, and average roughness of 0.777nm. In this technique, low cost, high purity and homogeneous surfaces can be prepared by the effective control of the operation parameters, especially the geometry of CFUBDM configuration. Keywords: Silicon nitride; Reactive sputtering; Unbalanced magnetron; Nanostructures 75 ORAL SESSIONS 03_Nuclear Physics and Nuclear Energy [03_OP 01] to [03_OP07] 76 (03_OP01) Determination and Fabrication of New Shield Super Alloys Materials for Nuclear Reactor Safety by Experiments and Cern-Fluka Monte Carlo Simulation Code, Geant4 and Winxcom* Abdulhalik Karabulut1, Bünyamin Aygün1, Turgay Korkut2, 1 Atatürk University Faculty of Science, Department of Physics, Erzurum, Turkey, akara@atauni.edu.tr , baygun25@hotmail.com 2 Sinop University of Nuclear Power Engineering. Sinop, Turkey, turgaykorkut@hotmail.com Due to depletion of fossil fuels, the increased energy leads the high usage of radiation. Recently, the security-focused debate about planned nuclear power plants is still continuing. This study aims to develop and produce new shielding materials to prevent radiation leak emitted from nuclear reactor to environment. In order to develop this new shield some of materials, Rhenium (Re), boron (B), chromium (Cr), nickel (Ni), iron (Fe), tungsten (W) and copper (Cu), were tested in similation programme and gave successful result against fast neutrons. The percentage of usage of these materials in alloys and high absorbation of radiation of fast neutron and gamma were determined by CERN - FLUKE Geant4 Monte Carlo simulation code and WinXCom program. Then the powder metallurgy technique was used to produce super alloys with these materials. To measure equivalent dosage of fast neutron of this produced new shield, an experiment was carried out. This produced products are not only to be used safely reactors but also nuclear medicine’s treatment room, for the storage of nuclear waste, in nuclear research laboratories and against cosmic radiation in space vehicles. 77 (03_OP02) Shell Model Calculations of Mid-Heavy Odd-Even 117,119Sn Isotopes* E. Dikmen and O. Öztürk Süleyman Demirel University, Department of Physics, Isparta, Turkey, erdaldikmen@sdu.edu.tr The standard shell model calculations are carried out for the mid-heavy odd-even 117,119Sn isotopes. As a preliminary step, the single-shell states in each shell, the multi-shell states combined from each subspaces, and the corresponding elementary matrix elements needed for the construction of shell model Hamiltonian are calculated within the sdgh major oscillator shell in the framework of Drexel University Shell Model (DUSM) approach. Then, we construct the Hamiltonian describing the specific spin and isospin of the mid-heavy oddeven 117,119Sn isotopes by using given single particle energies, CD-Bonn effective two-body interactions, outerand inner-product isoscalar factors, and the corresponding coefficients of fractional parentages. Finally, the eigenvalues and eigenfunctions of the Hamiltonian are obtained by using Lanczos diagonalization procedure. We compare the calculated spectrum of the 117,119Sn isotopes with the experimental ones. *This work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) under Contract No. 114F333 and Suleyman Demirel Univesity SDUBAP No. 4166-D2-14. 78 (03_OP03) Photon Attenuation Proferties of Concretes Containing Magnetite for Various Ratios Aycan Gür1, Birol Artiğ2, Tahir Çakır3 1 Yüzüncü Yil University, Science Faculty, Department of Chemistry, 65080 Van, Turkey 2 Yüzüncü Yil University, Science Faculty, Department of Physics, 65080 Van, Turkey 3 Yüzüncü Yil University, Medicine Faculty, Department of Radiation Oncology, 65080 Van, Turkey The gamma shielding properties of concretes containing magnetite ore in ratios (by weight) of 5%, 10%, 15%, 20% and 30% were assessed by using a 60Co (1,25 MeV ) radioactive source that built in Thratron 1000E™ device. The photon transmission values (I/Io) have been measured by 0.6 cc, farmer type, PTW™ ion chamber. Dose readings were made by PTW™ Unidose Electrometer. Dose readings (I0 and I) were used to calculate the linear attenuation coefficient (, cm-1 ), the mean free path (, cm) and the mass attenuation coefficient (, cm 2 /g) by the Lambert equations. Experimental data were compared to calculations get by using the WinXCom computer program. The findings of the study explains that concretes containing magnetite ore are more effective than the ordinary concrete in the attenuation of gamma rays. It was determined that the values of the mean free path decreased with increasing concentrations of magnetite ore, while the linear attenuation coefficients for 5 concrete blocks increased with increasing magnetite ore concentrations. A comparison of the theoretical values obtained from the WinXCom computer program and the experimental results revealed a good level of conformity 79 (03_OP04) The Effect of Concrete Containing Limonite Ore on Radiation Shielding Aycan Gür1, Birol Artiğ2, Tahir Çakır3 1 Yüzüncü Yıl University, Science Faculty, Department of Chemistry, 65080 Van, Turkey 2 Yüzüncü Yıl University, Science Faculty, Department of Physics, 65080 Van, Turkey 3 Yüzüncü Yıl University, Medicine Faculty, Department of Radiation Oncology, 65080 Van, Turkey In this study, the gamma shielding properties of concretes containing limonite ore in different rates (5%, 10%, 15%, 20% and 30%) were evaluated by using a 60Co (1,25 MeV ) radioactive source that built in Thratron 1000E™ device. The photon transmission values (I/I0) have been measured by 0.6 cc, farmer type, PTW™ ion chamber. Dose readings were made by PTW™ Unidose Electrometer. Dose readings (I0 and I) were used to calculate the linear attenuation coefficient (, cm-1 ), the mean free path (, cm) and the mass attenuation coefficient (, cm 2 /g) by the Lambert equations. The results were compared with calculations obtained using the WinXCom computer program. The findings of the study reveals that concretes containing limonite ore are more effective than the ordinary concrete in the attenuation of gamma rays. It was determined that the values of the mean free path decreased with increasing concentrations of limonite ore, while the linear attenuation coefficients for 5 concrete blocks increased with increasing limonite ore concentrations. A comparison of the theoretical values obtained from the WinXCom computer program and the experimental results revealed a good level of conformity. The gamma shielding properties of concretes containing limonite ore in ratios (by weight) of 5%, 10%, 15%, 20% and 30% were assessed by using a 60Co (1,25 MeV ) radioactive source that built in Thratron 1000E™ device. The photon transmission values (I/Io) have been measured by 0.6 cc, farmer type, PTW™ ion chamber. Dose readings were made by PTW™ Unidose Electrometer. Dose readings (I0 and I) were used to calculate the linear attenuation coefficient (, cm-1 ), the mean free path (, cm) and the mass attenuation coefficient (, cm 2 /g) by the Lambert equations. Experimental data were compared to calculations get by using the WinXCom computer program. The findings of the study explains that concretes containing limonite ore are more effective than the ordinary concrete in the attenuation of gamma rays. It was determined that the values of the mean free path decreased with increasing concentrations of limonite ore, while the linear attenuation coefficients for 5 concrete blocks increased with increasing limonite ore concentrations. A comparison of the theoretical values obtained from the WinXCom computer program and the experimental results revealed a good level of conformity. 80 (03_OP05) Double-Folding Examination of the 8B+58Ni Reaction By Using The Hartree-Fock Density Distribution Yusuf Sert1,2 1 Bozok University, Science and Art Faculty, Depertment of Physics, Yozgat, Turkey, 2 Bozok University, Sorgun Vocational School, Yozgat, Turkey yusufsert1984@yahoo.com.tr The elastic scattering angular distributions of 8B+58Ni reaction have been analyzed by using the double-folding model within the framework of the optical model at energies near the Coulomb barrier, 𝐸𝐿𝑎𝑏 = 20.7, 23.4, 25.3, 27.2 and 29.3 MeV. With this aim Hartree-Fock density distribution of the 8B nucleus has been used in order to obtain the real potentials. Imaginary potential has been taken as the Wood-Saxon potential. As a result, we have obtained a consistent agreement between theoretical and experimental results. 81 (03_OP06) Radiation Shielding of Concretes Containing Pandermite for Various Ratios Birol Artiğ1, Aycan Gür2, M. Salih Nas3 , Tülay Gürsoy4 1 Yüzüncü Yıl University, Science Faculty, Department of Physics, 65080 Van, Turkey Yüzüncü Yıl University, Science Faculty, Department of Chemistry, 65080 Van, Turkey 3 Yüzüncü Yıl University, Science Faculty, Department of Chemistry, 65080 Van, Turkey 4 Yüzüncü Yıl University, Science Faculty, Department of Chemistry, 65080 Van, Turkey 2 In this study, the linear attenuation coefficient and the mean free path value of concretes containing pandermite in different rates (0%, 5%, 10%, 15%, 20% and 30%) were investigated by using 241Am (59.54 keV) and 60Co (1.25 MeV) radioactive source. Gamma rays of 59.54 keV were counted by a Si(Li) detector and gamma rays of 1.25 MeV were measured by 0.6 cc, farmer type, PTW™ ion chamber. The data obtained from the measurements were used to calculate the linear attenuation coefficient (, cm-1 ) and the mean free path (, cm) experimentally by Lambert equation. These linear attenuation coefficient and the mean free path value for each concrete samples were theoretically calculated by using the WinXCom computer program. Theoretical values and experimental results were compaired. The study reveals that theoretical values and experimental results are in a good conformity at 59.54 keV but not at 1.25 MeV. It was experimentally determined that the linear attenuation coefficient decreases while the mean free path value increases with increasing pandermite rate in concrete samples 82 (03_OP07) Gamma – Ray Shielding Properties of Concretes Containing Haematite Ore for Various Ratios at Different Energies Birol Artiğ1, Aycan Gür2 1 Yüzüncü Yıl University, Science Faculty, Department of Physics, 65080 Van, Turkey Yüzüncü Yıl University, Science Faculty, Department of Chemistry, 65080 Van, Turkey 2 In this study, it was investigated how the photon attenuation properties of ordinary concrete changes by the adding of haematite ore and how it depends on its rate. Therefor, the effect of haematite ore rate on the gamma radiation shielding properties of concrete samples have been measured by using the transmission method for 59.54 keV and 1.25 MeV gamma rays with Si (Li) detector and 0.6 cc, farmer type, PTW™ ion chamber. Linear attenuation coefficients of concrete samples containing haematite ore in different rates were obtained by Lambert equation in which measured gamma rays intensities were used and then these measurements were compared with theoretical values calculated from WinXCom computer software. It was determined that linear attenuation coefficients decreased with increasing haematite ore rate in concrete samples. That is, the addition of this kind of haematite ore supplied in Elazığ is not a good and useful alternative option to be used for the purposes of radiation shielding. 83 ORAL SESSIONS 04_Particle Physics [04_OP 01] to [04_OP02] 84 (04_OP01) Recent Results on Resonance Production at ALICE A. Karasu Uysal 1, for the ALICE Collaboration 1 KTO Karatay University, Konya, Turkey, akarasu@cern.ch Resonances are a powerful tool to investigate the properties of the medium created in highenergy nuclear collisions. In particular, they can provide information on particle formation mechanisms and on the properties of the medium at freeze-out. The study of resonance production in other collision systems such as pp and p–Pb forms a necessary baseline to disentangle initial-state effects from genuine medium-induced effects. Thanks to its excellent tracking performance and Particle Identification capabilities, the ALICE detector allows for the reconstruction of resonance particles over a wide range of transverse momentum via their hadronic decay channels. In this talk, recent measurements of hadronic resonance production in pp, p−Pb and Pb−Pb collisions with ALICE at the LHC will be presented. The experimental results will be discussed and compared with the theoretical model predictions. 85 (04_OP02) Statistical Thermal Model Analysis of Particle Production at LHC N. Vardar1 and A. Karasu Uysal2 1 2 KTO Karatay University, Konya, Turkey, necati.vardar@karatay.edu.tr KTO Karatay University, Konya, Turkey, ayben.karasu@karatay.edu.tr A successful description of the particle ratios measured in heavy-ion collisions has been achieved in the framework of thermal models. In such a way, a large number of observables can be reproduced with a small number of parameters, namely the temperature, baryochemical potential and a factor measuring the degree of strangeness saturation. The comparison of experimental data at and the model estimations has made possible to define the thermodynamic parameters of strongly interacting matter at chemical freeze-out temperature. The detailed study of hadron and meson production including resonances using the statisticalthermal model is discussed. Their ratios are compared with the existing experimental data and predictions are made for pp and heavy-ion collisions at RHIC and LHC energies. 86 ORAL SESSIONS 05_Optic and Lasers [05_OP01] to [05_OP02] 87 (05_OP01) Three-Dimensional Imaging in Impaired Visual Field A. Oran1, S. Ozharar2and I. Ozdur3, 1 2 Abdullah Gül University, Kayseri, Turkey, abdullah.oran@agu.edu.tr Bahçeşehir University, İstanbul, Turkey, sarper.ozharar@eng.bahcesehir.edu.tr 3 Abdullah Gül University, Kayseri, Turkey, ibrahim.ozdur@agu.edu.tr Imaging at degraded visual environments is one of the biggest challenges in today’s imaging technologies. Especially military and commercial rotary wing aviation is suffering from impaired visual field in sandy, dusty, marine and snowy environments. For example during landing the rotor churns up the particles and creates dense clouds of highly scattering medium, which limits the vision of the pilot and may result in an uncontrolled landing. The vision in such environments is limited because of the high ratio of scattered photons over the ballistic photons which have the image information. We propose to use optical spatial filtering (OSF) method in order to eliminate the scattered photons and only collect the ballistic photons at the receiver side. OSF is widely used in microscopy, to the best of our knowledge this will be the first application of OSF for macroscopic imaging. Our experimental results show that most, nearly all, of the scattered photons are eliminated using the spatial filtering in a highly scattering impaired visual field. The results are compared with a standard broad area photo detector which shows the effectiveness of spatial filtering. 88 (05_OP02) Quantitative Analysis of Food Samples Using Calibration Free Lazer Induced Breakdown Spectroscopy A. Halide Karadag1, Erdal Aras2, Halil Berberoğlu3, Kemal E. Eseller4, Gonca Bilge5, Banu Sezer6, Ismail H. Boyaci7 1,2 Gazi University, Faculty of science Physics Department, Ankara /Turkey, halidekaradag01@gmail.com, erdalaras@gazi.edu.tr 3 Gazi University, Polatli, Art and Science Faculty, Physics Department, Ankara /Turkey, halilb@gazi.edu.tr 4 Atılım University, Faculty of Engineering, Department of Electrical and Electronics Engineering, Ankara /Turkey, efe.eseller@atilim.edu.tr 5,6,7 Hacettepe University, Faculty of Engineering , Department of Food Engineering, Ankara / Turkey, goncabilge@yahoo.com, sezerrbanu@gmail.com, ihb@hacettepe.edu.tr Laser induced-breakdown spectroscopy (LIBS) is a laser based spectroscopy technique in which short pulse laser, usually nano-second durations, is used to ablate a small amount of material and elemental compositions is determined from the emitted plasma emissions. LIBS is a versatile technique for rapid multi-element compositional analysis of gaseous, liquid, and solid materials without sample pre-treatment process and damaging the sample. For the quantitative analysis, two different techniques are employed. One of which is the conventional standard calibration curve technique and the other is the calibration free LIBS (CF-LIBS) technique. The matrix effect is one of the most important factors affecting adversely the performance of the LIBS measurement. In order to overcome the matrix effect, CF-LIBS was proposed. Assuming that plasma is in ideal conditions, that is, local thermodynamic equilibrium was reached and the plasma is optically thin. Therefore, in this work, we have used CF-LIBS technique to analyze the Hydroxypropyl methylcellulose samples. Hydroxypropyl methylcellulose (HPMC) and calcium carbonate (CaCO3) were mixed at certain concentrations and then the amount of calcium content was calculated by using the Saha - Boltzman equation throughthe electron density in the plasma environment of the laser and plasma temperature. 89 ORAL SESSIONS 06_Statistic Physics [06_OP01] 90 (06_OP01) Entropy Production and Internal Friction in Unitary Finite Rate Protocols Ferdi Altintas1, 2, Selçuk Çakmak3and Özgür E. Müstecaplıoğlu2 1 Department of Physics, Abant İzzet Baysal University, Bolu, Turkey 2 Department of Physics, Koç University, Sarıyer, İstanbul, Turkey 3 Department of Physics, Ondokuz Mayıs University, Samsun, Turkey e-mail: ferdialtintas@ibu.edu.tr We will consider a finite-rate unitary transformation generated by a parametric timedependent Hamiltonian. The non-ideal, finite-time quantum evolutions, leading to irreversible entropy production, is the root of internal friction in closed quantum systems. We will discuss the concept of inner friction, its origin and irreversibility in quantum systems arising from a unitary protocol. We will also discuss the role of inner friction in the limiting of the performance of quantum thermal devices. 91 ORAL SESSIONS 07_Mathematical Physics [07_OP01] to [07_OP03] 92 (07_OP01) A Fast Computational Study of Electromagnetic Waves in Parallel Plate Waveguides by Mathematica C. Deniz Adnan Menderes University, Department of Electrical and Electronics Engineering, Faculty of Engineering, 09100-Aydın, Turkey, cdeniz@adu.edu.tr Propagation of electromagnetic waves in parallel plate waveguides is a common fundamental subject involving TE, TM and TEM modes in the Electromagnetic Wave Theory (EMWT). For a given parallel plate waveguide, above some certain cut-off frequencies, different modes are allowed for transmission. Finding these cut off frequencies in the correct mode orders and the solution of the related Helmholtz equation is essential and various computational methods for various software applications has been developed. Mathematica is a very useful conventional software for scientific calculations and recent advances involving free Computable Document Format (CDF) in its packages seem straightforward to be used in such fast-solution applications in the EMWT. In this work, some simple computational algorithm with the related mathematica codes for parallel plate waveguide in lossless medium and lossless walls are being presented. These solutions can also be animated or simulated by using some simple commands in the CDF packages very easily. The success of the algorithm with the related codes reveals that they can be extended for further applications such as lossy media, lossy walls, rectangular waveguide, other geometries, etc. 93 (07_OP02) On The Exact and JWKB Solution of 1D Quantum Harmonic Oscillator by Mathematica C. Deniz Adnan Menderes University, Department of Electrical and Electronics Engineering, Faculty of Engineering, 09100-Aydin,Turkey, cdeniz@adu.edu.tr Although being the fundamental semiclassical approximation method mainly used in quantum mechanics and optical waveguides, JWKB method along with the application of the associated JWKB asymptotic matching rules is known to give exact solutions for the quantum harmonic oscillator. Asymptotically matched JWKB solutions are typically accurate or exact in the entire domain except for a narrow domain around the classical turning points where potential energy equals the total energy of the related quantum mechanical system. So, one has to cope with this diverging behavior at the classical turning points since it prohibits us from using continuity relations at the related boundaries to determine the required JWKB coefficients. Here, a computational diagram and related mathematica codes to surmount the problem by applying parity matching for even and odd JWKB solutions rather than boundary continuities are being presented. In effect, JWKB coefficients as well as the conversion factor for the dimensionless form of the Schrodinger’s equation, which is common to both exact and JWKB solutions, is being successfully obtained. 94 (07_OP03) High-Order Pade Approximant as A Convergent Sum for Kinetic Energy Density Functional Gradient Expansion up to the 6th Order Term A. Sergeev1, R. Jovanovic1, S. Kais 1.2.3, and F.H. Alharbi1,2 1 Qatar Environment & Energy Research Institute, Hamad Bin Khalifa University, Doha, Qatar 2 College of Science & Engineering, Hamad Bin Khalifa University, Doha, Qatar 3 Department of Chemistry, Physics, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, US It is known that the conventional gradient expansion of the kinetic energy density functional starts with ThomasFermi model as the leading term. The model assumes that the density is uniform and infinitely extended. So, the expansion fails when applied for atoms or finite systems, where it considerably overestimates the energy in the fourth order and generally diverges in the sixth order. To avoid the divergence, many approaches were suggested including lower-order Pade approximants for the sum up to the forth order term of the expansion. However, the sixth and higher terms are generally avoided due to the divergence issue. In this work, we circumvent the divergence by replacing the asymptotic series including the sixth order term in the integrand by higher-order Padé approximants. The presented approach avoids the regions where the higher order terms are relatively large and are no longer ―small corrections‖ while taking advantage of these terms in areas where they are small and improve the accuracy. The presented approximations improve moderately the accuracy when compared to the partial sums of the series. The approach is applied for atoms and Hooke’s law model for two-electron atoms. The results are presented and discussed. 95 ORAL SESSIONS 08_Applied Physics [08_OP01] to [08_OP08] 96 (08_OP01) Magnetic Levitation by Permanent Magnets Ali Can Aktaş1, Mehmet Kaya1, Kamil Kaya1, Bekir Aktaş1 1 Gebze Technical University (GTU), Physicis Department, Gebze/Kocaeli/Turkey aaktas@gtu.edu.tr ; mkaya@gtu.edu.tr ; kamil@kamilkaya.com.tr ; aktas@gtu.edu.tr An effective active control technique has been developed to magnetically levitate an object above permanent magnets arrayed symmetrically about a perpendicular axis. Since the static magnetic force field does not have absolute static equilibrium position for a body containing a ferromagnetic object an active technique has been developed to reach quasi-static state. The magnetic part of the floating body was assumed to be magnetically symmetric about a perpendicular axis. The non magnetic part of the flying body has to be as symmetric as possible with respect to its weight as well. A mathematical model for the device has been proposed and its dynamic properites sucesfully analized. The model uses mechanical and magnetic parameters to simulate the motion of the flying body. The quasi-equilibrium (quisistationary) position of the floating body has been succesfully reached by applying ac magnetic fields produced by two mutually perpendicular current coil pairs in horizontal plane. The quasi-equilibrium position is addressed by well-oriented narrow laser beam source located at the symmetry axis of the flying body. Due to the astray magnetic force field lines, the body always tries to go far from its equilibrium location and equilibrium orientation. Therefore in the model a quadratic light sensor measures the deviation of the flying object from its equilibrium position and instantly informs the electronic control unit. Thus the electronic control unite calculate needed amount of the ac current to apply into the coil pairs to produce necessary restoring magnetic field on the flying body to bring it back its quasi-equilibrium position in horizontal plane. 97 (08_OP02) Pinning Properties of Y211 Added Cold Top-Seeded YBCO Grown on Y2O3 Layer Bakiye Çakır1, 2, Şeyda Duman3, Alev Aydıner1 1 Department of Physics, Faculty of Sciences, Karadeniz Technical University, Trabzon 61080, Turkey, bakiye.cakir@gmail.com 2 Department of Elementary Education, Faculty of Education, Artvin Çoruh University, Artvin 08000, Turkey 3 Vocational School of Health Services, Artvin Çoruh University, Artvin 08000, Turkey In this study, samples having different composition were prepared with cold top seeding-meltgrowth (TSMG) process by using Nd123 seed.Y2O3 buffer layer was placed to bottom of the pellets consist of Y123: Y211 powder mixtures. Two samples were fabricated in stoichiometric ratios of 1:0 and 1:0.4. The Tc onset values of Y0 and Y40 were found to be 93.4 and 93.6 K at 0 T, respectively. The dependence of the effective activation energy U of the flux pinning on the magnetic field and temperature of the sample were determined using the Arrhenius activation energy law from the resistivity curves. The magnetization measurements were performed using a vibrating sample magnetometer (VSM) at 30, 50 and 77 K. The critical current densities (Jc) for Y0 and Y40 samples were determined to be 5.1×103 and 3.7×103 A/cm2 at 77 K in 0 T, respectively. The normalized pinning force density versus the reduced field was examined at different temperatures to determine the pinning mechanism. 98 (08_OP03) Microstructure and Superconducting properties of Commercial Lead-free Solders for low Temperature applications C. Aksoy1, T. Mousavi2, G. Brittles2, C. R. M. Grovenor2, S. Speller2 1 Karadeniz Technical University. Faculty of Technology, Department of Electronics and Communication Engineering, Of, Trabzon.cananaksoy@ktu.edu.tr 2 Department of Materials, The University of Oxford, Parks Road, OX1 3 PH, Oxford, UK Solders play a crucial role in the production of electrical and mechanical components in the electronics industry and Tin-Lead solders were used for many years because of their combination of low cost, low melting point (120°C), good wetting, ductility and fatigue resistance properties. However, environmental and health concerns over lead toxicity has resulted in recent legislation to limit the use of lead-based solders and encouraged researchers to discover new lead-free solders. In this study, we investigated microstructural and superconducting properties of lead-free solders which are commonly used in technology. The samples were characterised by using SEM/EDX for microstructural properties and SQUID was used for magnetic and superconducting properties. We claimed that this solders may not efficient for superconducting applications. 99 (08_OP04) The Canculation and Comparison of Characteristic Parameters of Re/n-Si and Mo/n-Si Schottky Diodes Structures Produced by Pulsed Laser Deposition (PLD) Technique Using New and Existing Methods H. Atçeken1, H. Durmus1 and H. Ş. Kılıç2 1 Selçuk Universty, Faculty of Science, Department of Physics, 42031 Campus, hdurmus@selcuk.edu.tr, Konya/Turkey 2 Selçuk Universty, Advanced Technology Research and Application Center (IL-TEK), 42079, Campus, hamdisukurkilic@selcuk.edu.tr, Konya/Turkey Metal-semiconductor (MS) structures are still being investigated in a large proportion since it has a large number of applications in electronic industry. It has a vital importance of knowing the characteristic parameters, such as I0 saturation current, φB barrier height, n ideality factor and Rs serial resistence, in advance, to design and produce the circuit. The nature of deposition methods for metals (Re,Mo,Ti ...) having high melting temperatures become very important when these are considered to be a rectifier contact and a few number of methods remains as options. One of these is PLD method having effectively controlable parameters. Rhenium (Re) and Molibdenium (Mo) metals were deposited on n-Si wafer in 1500 -2000 tickness as rectifiers contact by using PLD method. The forward bias I-V measurements of Re/n-Si and Mo/n-Si Schottky diodes were made in the temperature interval of 100K to 300K. Characteristic parameters of both Schottky diodes were calculated by using a new method proposed by Haziret DurmuĢ (1). In this method, the equations were proposed to be , ve Then these parameters were calculated according to Cheung-Cheung and Norde methods in the literature and the results were compared and prensented in this work. 100 (08_OP05) Production and Application of RGO/ZnO/TiO2 Composite Material S. Kerli1, Ü. Alver2, A. Tanrıverdi3, Ö. Akgül3 1 Department of Energy Systems Engineering, Faculty of Elbistan Technology, Kahramanmaraş Sütçü İmam University, Kahramanmaraş, Turkey 2 Karadeniz Technical University, Dept of Metallurgical and Materials Eng., Trabzon, Turkey 3 Kahramanmaraş Sütçü İmam University, Department of Physics,46100 Kahramanmaraş, Turkey In this work, RGO-ZNO-TĠO2 composite materials were synthesized using the hydrothermal method. Physical characterizations of produced particles were performed by XRD,SEM and Raman spectroscopy. Electrochemical measurements of the electrodes were investigated using cyclic voltammetry device and photovoltaic properties were also measured using the solar simulator. Acknowledgements: This study was supported by Scientific Research Projects Unit of KahramanmaraĢ Sütçü Ġmam University (Project code: BAP-2014/4-32M), (KSU-Turkey). 101 (08_OP06) ZnO-Based Dyes Sensitized Solar Cell with Natural Dyes A. Tanrıverdi1, Ü. Alver3, S. Kerli2, Ö. Akgül1 1 Kahramanmaras SutcuImamUniversity, Department of Physics, 46100 Kahramanmaraş, Turkey 2 Department of Energy Systems Engineering, Faculty of Elbistan Technology, Kahramanmaraş Sütçü İmam University, Kahramanmaraş, Turkey 3 Karadeniz Technical University, Dept of Metallurgical and Materials Eng., Trabzon, Turkey In the study, natural dye, from black carrots, on ZnO film was used to obtained solar cell. FTO coated glasses were used as substrates and they were produced with chemical spray method. ZnO powder was synthesized by hydrothermal method using zinc nitrate salt. ZnO powder was characterized by XRD and SEM analysis. The obtained ZnO powders lurry were coated on FTO glass with a spatula. Produced ZnO film was annealed at 400 °C and then it was formed as working electrode with the black carrot dye. In the cell production platinum coated FTO film was used as the counter electrode. Current-voltage characteristics of the cells was measured using a solar simulator. Efficiencies of solar cells were calculated from I-V graphics measurements. 102 (08_OP07) Highly Uniform Magnetic Fields by Utilization of Spheroidal Coils: A study from Theoretical Calculations to Experiment Y. Öztürk1,2 and B. Aktaş1 1 Gebze Technical University, Physics Department, Gebze / Kocaeli, Turkey, aktas@gtu.edu.tr 2 TUBITAK BILGEM*, Gebze/Kocaeli, Turkey, yavuz.ozturk@tubitak.gov.tr Most of the magnetic detection and imaging applications require highly uniform magnetic fields. For instance, Magnetic Resonance Imaging (MRI) instruments need high field uniformities for locating signals from the body under examination, together with extreme field intensities for an enhanced signal-to-noise ratio. In typical imaging machines uniform magnetic fields are generated using coils which are generally of Helmholtz coil type. However there also exist alternative coil structures such as tetra coils, saddle coils, planar coils etc. Spheroidal coils may in fact be another alternative for generating such uniform magnetic fields. Here we present theoretical background along with our finite element calculation results. Finally we show our experimental measurements on a spheroidal coil we produced. It reveals that a high field uniformity of about 0.15% is indeed achievable inside spheroids using certain winding functions on their surface for emulating theoretically known surface currents. * The Scientific and Technological Research Council of Turkey, Center of Research for Advanced Technologies of Informatics and Information Technology 103 (08_OP08) RGO / ZnO Composite Materials Produced from Different Zinc Salts and Investigation of Their Super Capacitor Performance Ö. Akgül1, Ü. Alver2, S. Kerli3, A. Tanrıverdi1 1 Kahramanmaras Sutcu Imam University, Department of Physics, 46100 Kahramanmaraş, Turkey 2 Karadeniz Technical University, Dept of Metallurgical and Materials Eng., Trabzon, Turkey 3 Department of Energy Systems Engineering, Faculty of Elbistan Technology, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş, Turkey Different types of zinc salts namely; zinc acetate, zinc chloride and zinc nitrate were used to obtain active materials of supercapacitor (SC). The RGO-ZnO composite materials were produced by the hydrothermal method. Physical properties of produced RGO/ZnO composite were examined by XRD and SEM. The electrochemical properties of the RGO-ZnO particles obtained from different precursors were investigated through cyclic voltammetry, galvano static charge/discharge measurements in a 6 M KOH electrolyte. 104 ORAL SESSIONS 09_Biophysics and Medical Physics [09_OP01] to [09_OP08] 105 (09_OP01) Development of a Geometry Verification System for Model Based Dose Calculation Algorithms in Brachytherapy Treatment A.R.Yusuf1, G. Yegin2, S. Sariaydin3, Z. Akan4, M. B. Yüksel5 1 Celal Bayar University, Faculty of Science and Letters, Physics Dept., Manisa, Turkey, 151295001@ogr.cbu.edu.tr 2 Celal Bayar University, Faculty of Science and Letters, Physics Dept., Manisa, Turkey, gyegin@gmail.com 3 Celal Bayar University, Faculty of Science and Letters, Physics Dept., Manisa, Turkey, sibel.sariaydin@cbu.edu.tr 4 Celal Bayar University, School of Medicine, Dept. of Biophysics, Manisa, Turkey, zafer_akan@hotmail.com 5 Celal Bayar University, School of Medicine, Dept. of Urology, Manisa, Turkey, drmehmetyuksel@hotmail.com Within the last decade, there has been a growing interest on model based dose calculation algorithms (MBDCA) in brachytherapy treatment for the seek of a better and more accurate dose estimation method than the American Association of Physicists in Medicine (AAPM) Task Group No. 43 (TG-43) formalism in treatment planning systems(TPSs). MBDCAs require well-defined test case brachytherapy plans for dose verification purposes. In this study, we developed a new Monte Carlo based 3d-geometry testing procedure for MBDCA systems. The goal of this system is to detect abnormal dose changes in the absorbing medium due to the arbitrary translation and/or rotation of sources in the geometry. For this purpose, various test case scenarios were prepared. In each scenario, different number of the same model radioactive brachytherapy sources are placed at certain locations in a voxelized water environment and then dose distributions were obtained in the phantom by using Monte Carlo technique. BrachyDose Monte Carlo code was used as the MBDCA tool for all dose calculations in this study. Dose outputs of these calculations were saved in a database so that they can be used as reference data sets for MBDCA based TPSs. This study is supported by TUBITAK (under project 213E028) and dose calculations were fully performed at TUBITAK/ULAKBIM High Performance and Grid Computing Center (TRUBA resources). 106 (09_OP02) Calculation of Linear Attenuation Coefficients and CT Hounsfield Units Using Radionuclide 99mTc for SPECT/CT H. Doğan and E. Dikmen Süleyman Demirel University, Department of Physics, Isparta, Turkey, hilaldogan@sdu.edu.tr The linear attenuation coefficients (µ) and Hounsfield units (HUs) are calculated for six materials covering the range of values found clinically. Narrow-beam µ values are measured by performing radionuclide transmission scans using 99mTc and compared to the published data. The relationship between µ and HU can be used to convert the computed tomography (CT) images to the single photon emission computed tomography (SPECT/CT) images. Defining the relationship between the linear attenuation coefficient and HU is essential when using X-ray CT data for SPECT attenuation correction. A series of such relationships have been determined for six materials that span the density range encountered clinically. 107 (09_OP03) Comparing Dose Distributions of Dose to Water and Dose to Medium Calculations for Intracranial SRT I. F. Durmus1, 2, B. Tas1, I. Tarhan2, E. D. Atalay2 1 Department of Radiation Oncology, Yeni Yüzyıl University Faculty of Medicine Gaziosmanpasa Hospital, İstanbul, Turkey 2 Department of Physics, Çanakkale Onsekiz Mart University, Çanakkale, Turkey Comparing between dose distributions of VMAT plans that were calculated by Dose-toMedium (Dm) and Dose-to-Water (Dw) mod in Monte Carlo algorithm. Monaco 5 treatment planning system can account the absorbed dose calculation in two modes that are Dose to Water (Dw) and Dose to Medium (Dm). Twenty five intracranial SRT plans were prepared by providing 95% dose coverage in Dm mod by using 6MV-FFF energy. All plans were optimized by selecting the grid spacing 0.2 cm, Beamlet width 0,25-0,3 cm and statistical uncertainty of 1%. The results were evaluated with Wilcoxon Signed Ranks tests. Similar results were found with intracranial SRT delivery. All difference were below 1% in Planning Target Volume (PTV). V5, V10, V20 in brain were similar. Dw has calculated left and right cochlea maximum dose by 7,45% (p:0,001) and 7,54% (p:0,001) more accordingly. Although similar results were found in intracranial irradiations, differences between Dw and Dm increases in like bone (cochlea). Target in intracranial (SRT) VMAT plans (Dm) will give more accurate results in the calculation to be made. Table1: Dose distribution for 19 Brain SRT PTV Maksimum Mean Minimum L Lens Mean R Lens Mean L Cochlea Maksimum R Cochlea Maksimum L O. Nerve Maksimum R O. Nerve Maksimum Chiasm Maksimum Brainstem Maksimum Brain V20 V10 V5 Mean MU Dose to Medium 2803 2698 2535 56,83 48,69 184,65 171,87 143,75 139,35 225,06 681,42 2,31 6,38 13,92 233,65 1504,5 Dose to Water 2828 2700 2537 57,78 49,71 199,51 185,88 144,11 141,32 225,18 680,55 2,31 6,39 13,93 237,39 1493 108 Difference% 0,88 0,07 0,08 1,64 2,05 7,45 7,54 0,25 1,39 0,05 -0,13 0,00 0,16 0,07 1,58 -0,77 p 0,862 0,198 0,711 0,011 0,001 0,001 0,001 0,896 0,276 0,796 0,005 0,650 0,240 0,909 0,244 0,001 (09_OP04) Linear Attenuation Coefficients of Some Materials at Diagnostic X-Ray Energy Levels and Use of These as Tissue Equivalent X-Ray Phantoms M. E. Sağsöz 1 Atatürk University, Faculty of Medicine, Biophysics Dept, Erzurum, Turkey, mesagsoz@atauni.edu.tr Phantom materials are x-ray equivalent of some biological tissues or some specific materials like water that mimic the absorption and scattering properties of these. They can be used for calibration of x-ray devices or applications that using real persons increases x-ray exposure risks. In this study we tried to determine linear attenuation coefficients of some materials like dosimetric gels, oil and PMMA at diagnostic x-ray energy levels. Hounsfield Units (HU) of different mixtures and plastic materials are also measured at a Computed Tomography (CT) scanner and linear attenuation coefficients are calculated and compared with data given by XCOM database Keywords: Linear Attenuation Coefficients X-Ray, Tissue Equivalent, Phantom. 109 (09_OP05) Evolution of Medical Computed Tomography Scanners and Calibration Procedures for Multi Detector Computed Tomography Devices M. E. Sağsöz 1 Atatürk University, Faculty of Medicine, Biophysics Dept., Erzurum, Turkey, mesagsoz@atauni.edu.tr In this presentation it is aimed to summarize the development stages and calibration procedures of medical computed tomography (CT) scanners. Starting from a single x-ray source to a single detector today CT scanners reached to an ability to acquire images of a beating heart in four dimensions (three spatial, one temporal dimension). Besides the advantages of CT scanners in showing calcifications in vascular system increased radiation exposures causes limitations to use this technology. Assessing the radiation exposures of CT scanners some fundamental parameters gives information to compare different manufactures and different site implementations. These parameters are mainly, CT dose index and dose length product. Here the practical measurement instrumentation and procedures are discussed. Keywords: Computed tomography, X-Ray exposure, Multi detector computed tomography, CT dose index, Dose length product. 110 (09_OP06) A Study on Determination of Tritium Levels in People Living in Samsun, Turkey Serdar Dızman1*, Recep Keser1, Adnan Yılmaz2, Banu Çakır3 1 Recep Tayyip Erdogan University, Faculty of Arts and Sciences, Department of Physics, Rize, Turkey, serdar.dizman@erdogan.edu.tr 2 Recep Tayyip Erdogan University, Faculty of Medicine, Department of Medical Biochemistry, Rize, Turkey, adnan.yilmaz@erdogan.edu.tr 3 Hacettepe University, Faculty of Medicine, Department of Public Health, Ankara, Turkey, banucakir4@gmail.com Tritium is a radioactive isotope of hydrogen that emits low-energy beta particles, with a maximum energy of 18.6 keV, and with a half life of 12.3 years. It is found in nature and it can also be produced by human activities. Tritium concentrations in the urine samples were measured by the liquid scintillation counter (LSC). Liquid scintillation counting is the most commonly used technique for determining tritium in environmental and biological samples. The urine samples were analyzed and collected from 30 adult participants in Samsun, Turkey. Their ages ranged from 18 to 60, and 12 of them were female. The mean tritium concentration in their urine samples was 7.41 ± 1.38 Bq/L and the maximum 21.38 Bq/L. The MDA for this method was 2.59 Bq/L. The tritium concentrations of 6 samples (20 %) were below of the MDA. The average tritium concentrations in urine samples of males and females were 7.80 ± 1.47 Bq/L, 6.82 ± 1.24 Bq/L, respectively. The annual effective doses for males and females were also evaluated and the results were much lower than the dose limit for tritium inside the body. 111 (09_OP07) Comparative Investigation of Normal Modes and Molecular Dynamics of Hepatitis C NS5B Protein M. S. Asafi1, A. Yıldırım2, M. Tekpınar1 1 Yüzüncü Yıl University, Van, Turkey, tekpinar@buffalo.edu 2 Siirt University, Siirt, Turkey Understanding dynamics of proteins has many practical implications in terms of finding a cure to many protein related diseases. Normal mode analysis and molecular dynamics methods are widely used physics-based computational methods for investigating dynamics of proteins. In this work, we studied dynamics of Hepatitis C NS5B protein with molecular dynamics and normal mode analysis. Principal components obtained from 100 nanoseconds molecular dynamics simulations show good overlaps with normal modes calculated with a coarse-grained elastic network model. Coarse-grained normal mode analysis takes at least an order of magnitude shorter time. Encouraged by this good overlaps and short computation times, we analyzed further low frequency normal modes of Hepatitis C NS5B. Motion directions and average spatial fluctuations have been analyzed in detail. Finally, biological implications of these motions in drug design efforts against Hepatitis C infections have been elaborated. 112 (09_OP08) Total Body Irradiation’s Dosimetric Features by Volumetric Modulated Arc Therapy Method B. Tas1, 2, I. F. Durmus1, S. Tokdemir Ozturk2 1 Department of Radiation Oncology, Yeni Yüzyıl University Gaziosmanpasa Hospital, İstanbul,Turkey, Bora_tash @yahoo.com ifarukdurmus@gmail.com 2 Department of Physics, Gebze Technical University, Kocaeli,Turkey sozturk@gtu.edu.tr To compare three different types of volumetric modulated arc therapy(VMAT) planning tecniques using Elekta Versa HD lineer accelerator to deliver total body irradition(TBI) treatment. Five TBI patient’s treatment planning performed using Monaco5.1 ® treatment planning system with three different VMAT tecniques for each patient.First one was single arc VMAT tecnique,second one was double arc VMAT tecnique and third one was 2 fields arc VMAT tecnique for one isocentre.The VMAT-TBI tecnique consisted of three isocentres and three overlapping arcs.The prescribed dose was 95% of target volume receiving dose of 12 Gy.Mean dose to lung and kidney were restricted less than 9.0 Gy. An average total delivery time was determined 835±86 seconds and an average monitor unit(MU)s was determined 2202±254 MUs for double arc VMAT technique.This study demonstrates that double arc VMAT technique has got less MUs than other technique but an average delivery time is %17 more than single arc VMAT technique.When we compared organ at risk (OAR)s,we had less dose and better dose coverage to target with double arc VMAT technique. The tecnique for TBI using VMAT was found feasible.The results show that dose coverage of target and OAR's doses also depend significantly VMAT techniques. Based on the results we have decided to plan TBI in our clinic with double arc VMAT tecnique. 113 ORAL SESSIONS 10_Physics Education [10_OP01] to [10_OP07] 114 (10_OP01) Investigating of Elementary Teachers Candidates’ Experiences About Simple Physics Experiments Developed Based on Constructivist 5e Model Necati Hırça1 1 Bartın University, Education Faculty, Bartın, Turkey, dr.hirca@gmail.com This study was carried out 34 Elementary Teacher Candidates (ETCs) in 2013-2014 education year. Data were collected through semi-structured interviews with open-ended questions. The applications completed in five phases. a) The instructor introduced physics experiments and Constructivist 5E Model. b) He briefed how can develop a simple physics experiments based on constructivist 5e model by giving an illustrative example. c) He briefed how to use movie maker program to edit the experiment videos and how to use msexcel program to draw graphics. d) He wanted ETCs to record and edit simple physics experiments based on Constructivist 5E Model similar to illustrative example where they dwell in. e) ETCs presented their experiment videos to discuss them with each other in class. This process runs within 14 weeks. The findings showed that majority of ETCs (78.6%) stated that they had negative attitude towards science and science experiments in the beginning of the applications and they (68.4%) have encountered difficulties during conducting and designing experiments. Majority of ETCs (85.7%) stated they changed their negative attitudes in future times. They (64.3%) stated that the applications helped them to understand science concepts better and enabled them to perform a successful science implementation. The results of the study showed that ETCs’ have lack of practical knowledge not only about science lesson but also about basic computer skills and IT literacy. According to ETCs’ views, the applications had influence upon ETCs’ technological, pedagogical and content (science concepts) knowledge. Keywords: Simple physics experiment, elementary teacher candidates, Constructivist 5E Model 115 (10_OP02) Drama and Role Play Examples for Introductory Physics Course M. Ş. Bülbül1 and B. Garip2 1 2 KafkasUniversity, Kars, Turkey, msahinbulbul@gmail.com Middle East Technical University, Ankara, Turkey, belkis@metu.edu.tr Students either at high school level or university level mostly think that physics is a difficult course and physics concepts are not easy to comprehend. Using Drama and Role Play in physics courses helps to overcome this thoughts about course. Drama and Role Play enables students to be active in knowledge construction process instead of being passive listener and motivates them. This study aims to combine Drama and Role Play examples from literature and personal experiences which are related with concepts in introductory physics courses. These examples vary from Photoelectric Effect to Ohm’s law. Although introductory physics course is full of concepts and formulas, using drama examples may change the learning atmosphere more attractive and funny. Drama and Role Play examples will be presented with the drama application steps (introduction, development, quieting) so that this study will serve as a resource for physics instructors. The quality and validity of selected drama examples are enough to overcome some physicists’ prejudices that physics course are not appropriate for drama. 116 (10_OP03) A Universal Design for Robotics Education M. Ş. Bülbül1 and O. Oktay2 1 2 Kafkas University, Kars, Turkey, msahinbulbul@gmail.com Atatürk University, Erzurum, Turkey, oktayozlm@gmail.com In this century technological and educational needs increase drastically. Out of local language, educators need to teach robotic language and use necessary technologies to design robots like Arduino set. This set let users to know less code/computer language and knowledge about electronics. Users may develop their own robots with this set. It also improves design and implementation skills. However it is not a suitable design for blinds. Universal design approach suggests educators to design courses in a way to meet the needs of all participants. By this approach, learning environments are helpful and useful for participants with special needs. With the scope of the study we suggest a three steps course design for robotics education; introducing with appropriate materials, using real materials with descriptions and discussing for further designs. In the first step bigger materials with big holes and big bottoms will be used to make sense about devices. In the second step, during the sighted learners are testing we suggest to educator to describe what is happening. The last step will be about imagination for what we should do more. Present study may lead to new insights on how to introduce system to blinds during the learning process. 117 (10_OP04) A Discussion on Velocity–Speed and Their Instruction Ali Yıldız Education Faculty of Kazım Karabekir, Atatürk University, Erzurum, Turkey, ayildiz@atauni.edu.tr The study was conducted to investigate how to teach velocity and speed effectively with which activities and examples and although they are different quantities, they are generally used in the same meaning. The data of the study and the quantities discussed were obtained from the examination of documents like scientific articles and books about the instruction and they were examined using descriptive analysis approach. Expository instruction was supported with writing to learn activities and an approach which was actualized in seven stages was suggested so that velocity and speed could be learnt at an anticipated level. What could be done at each stage was explained and especially at the fifth stage of the study, the detailed example on distance, displacement, velocity and speed would promote understanding of the presented quantities much more easily and correctly with their critical properties and students would associate it with their prior knowledge. Moreover, it is anticipated that due to these reasons, the example could be used as a tool to actualize permanent learning. At the last stage of the study, it is considered that having students write a letter and a summary to young respondents and using them can support what was done in the previous stages and also it can promote long-term retention of the learned concepts. 118 (10_OP05) Adapting Smart Phone Applications about Physics Education to Blind Students M. Ş. Bülbül1, N.Yiğit2 and B. Garip3 1 2 Kafkas University, Kars, Turkey, msahinbulbul@gmail.com Karadeniz Technical University, Trabzon, Turkey, nevzatyigit@yahoo.com 3 Midle East Technical University, Ankara, Turkey, belkis@metu.edu.tr Today, most of necessary equipment in a physics laboratory are available for smartphone users via applications. Physics teachers may measure from acceleration to sound volume with its internal sensors. These sensors collect data and smartphone applications make the raw data visible. Teachers who do not have well-equipped laboratories at their schools may have an opportunity to conduct experiments with the help of smart phones. In this study, we analyzed possible open source physics education applications in terms of blind users in inclusive learning environments. All apps are categorized as partially, full or non-supported. The roles of blind learner’s friend during the application are categorized as reader, describer or user. Mentioned apps in the study are compared with additional opportunities like size and downloading rates. Out of using apps we may also get information about whether via internet and some other extra information for different experiments in physics lab. Q-codes reading or augmented reality are two other opportunity provided by smart phones for users in physics labs. We also summarized blind learner’s smartphone experiences from literature and listed some suggestions for application designers about concepts in physics. 119 (10_OP06) An Approach for Totally Blind Learners about Day and Night Concepts M. Ş. Bülbül1and L. K.Wee2 1 2 Kafkas University, Kars, Turkey, msahinbulbul@gmail.com Ministry of Education, Education Technology Division, Singapore, WEE_Loo_Kang@moe.gov.sg To teach day and night concept, ideas from 42 pre-service classroom teachers who took a special education course were collected and analyze to prepare an open source simulation. With this study, a basic day and night open source simulation is developed in terms of these views. This Open source Jawa simulation includes a scenario with window which let us to see the sky and a temperature to compare the difference between day and night. Then we resimulated/transformed to 3D tactile version for blind learners with play dough and sticks. Additional to sounds in the night and day, we added three home figure to the simulation to ask what will happen at the middle of day and night differentiation line; twilight. Sighted children will see some of stars with a little sunlight at that point and for inclusive usage we ask them to describe the picture seen from the window in the simulation. 120 (10_OP07) Differentiated Instruction for Physics Education: An experimental Investigation U. Turgut1, R. Salar2 1 2 Atatürk University, Erzurum, Turkey, uturgtut@atauni.edu.tr Atatürk University, Erzurum, Turkey, rizasalar@atauni.edu.tr The purpose of this study is to determine effectiveness of using differentiated instruction in physics education. For this purpose, the study was designed according to the pretest-posttest with control group model, which is one of the quasi experimental models. The type of the application (differentiated instruction, 5E learning cycle) was determined as independent variable. The study was conducted with 58 high school students. The students were instructed in two classes as control and treatment group for three weeks by same teacher. The teacher used 5E learning cycle in control group and differentiated instruction in treatment group. Two different achievement test was used for measurement. First test was used in an attempt to demonstrate equalization of groups. Second test was used for explore the effect of the application on students’ achievement. Findings revealed that there is no a significant difference between control and treatment groups before application and there is a significant difference between control and treatment groups after application. According to the results of this study, differentiated instruction can be applied on physics education. 121 ORAL SESSIONS 11_Astronomy and Astrophysics [11_OP01] to [11_OP03] 122 (11_OP01) Rotating Bianchi Type-II Model in f(r,t) Theory of Gravity Değer Sofuoğlu İstanbul University, İstanbul, Turkey, degers@istanbul.edu.tr Rotating Bianchi type-II cosmological model containing shear-free perfect fluid has been studied in f(R,T) theory of gravity. By choosing special functional form of f(R,T) and using extended tetrad evolution and constraint equations of this modified gravity theory, we have investigated whether the Bianchi type-II universe can have rotation and expansion at same time. 123 (11_OP02) Stereo Observations of hd 90386 (rx sex): a Delta Scuti or a Hbrid Star? D. Özuyar1,2, I. R. Stevens2, G. Whittaker3, and V. Sangaralingam4 1 Ankara University, Dept. of Astronomy and Space Sciences, Ankara, Turkey, dozuyar@ankara.edu.tr 2 University of Birmingham, School of Physics and Astronomy, Birmingham, United Kingdom, irs@star. sr.bham.ac.uk 3 University of Toronto, Toronto Ontario, Canada, whittaker@astro. utoronto.ca 4 University of Montreal, School of Physics, Montreal, Canada, vinothini. sangaralingam@asc-csa. gc.ca HD90386 is a rarely studied bright A2V type δ-Scuti star (V = 6.66m). It displays short-term light curve (LC) variations which are originated due to either a beating phenomenon or a nonperiodic variation. In this paper, we presented high-precision photometric data of HD90386 taken by the STEREO satellite between 2007 and 2011 to shed light on its internal structure and evolution stage. From the frequency analysis of the four-year data, we detected that HD90386 had at least six different frequencies between 1 and 15 d-1. The most dominant frequencies were found at around 10.25258 d-1 (A~1.92 mmag) and 12.40076 (A~0.61 mmag). Based on the ratio between these frequencies, the star was considered as an overtone pulsator. The variation in pulsation period over 35 years was calculated to be dP/Pdt = 5.39(2) x 10-3 yr1 . 124 (11_OP03) Spectral Preparation of Spectra for Surface Mapping with Doppler Imaging of a Peculiar Star V776 Her Hande Gürsoytrak1, Birol Gürol2 1 Ankara University, Ankara, Turkey, hande.gursoytrak@science.ankara.edu.tr 2 Ankara University, Ankara, Turkey,birol.gurol@ankara.edu.tr Our Sun is the only star that we can see thoroughly the surface of it. Chemically peculiar stars show anomalous abundances of some elements such as silicium, chromium and strontium. Doppler imaging is a useful technique for reconstructing the several structures on the surfaces of peculiar stars. We analyze our spectral observations as a preparation to Doppler imaging and compare V776 Her’s observational spectra with the synthetic spectra that we produce with using the SPECTRUM code. The differences between the observational spectra and the synthetic spectra is discussed in this work. 125 ORAL SESSIONS 12_Other Topics [12_OP01] to [12_OP13] 126 (12_OP01) The Comparison of Performance by Using Alternative Refrigerant r152a in Automobile Climate System with Differant Artificial Neural Networks Models A. T. Kalkisim1 A. S. Haşıloglu2 K. Bilen2 1 MYO Mechatronic, Gümüşhane University, Gümüşhane,Turkey, atkalkisim@gumushane.edu.tr 2 Computer Engineering, Atatürk University, Erzurum, Turkey, asamet@atauni.edu.tr 3 Mechanical Engineering, Atatürk University, Erzurum, Turkey, kbilen@atauni.edu.tr The reason of more impact on Global Warming Potantial of R134a refrigerant which is using in common automobile climate systems is abrogating gradeted. Alternative refrigerant prefered to be drop in for the current system with e few amendment. By the time R152a alternative refrigerant which is the thermodynamic properties is similar and has zero effect on global warming potantial, is modelled in a artificial neural network for automobile climate system cause of aimed to find out the intermediate values of the performance In this situtation network construction has determined for which model is provides the best prediction between trained with three differant ANN model and three ANN method. During the training period of the ANN methods that named, Levenberg – Marquardt, BatchBack Propagation ve Conjugate Gradiant Descent has trained and determined the best prediction result with in 1000 itteration and several network constructions which is based with five inputs and one output data. The accuracy of the found YSA model is also authenticated by comparing with the predictions results of Multi-Regression method. Keywords: Alternative Refrigerant, R152a, Automobile Climate System, Air Conditioning, ANN, Neural Network, Network Model 127 (12_OP02) Calculation of Solar Radiation by Using Regression Methods Ö. Kızılkan1, M. Şahin2 1 Siirt University, Department of Electrical and Electronics Engineering, Siirt, Turkey omerkizilkan@gmail.com 2 Siirt University, Department of Electrical and Electronics Engineering, Siirt, Turkey msahin@siirt.edu.tr In this study, solar radiation was estimated at 53 location over Turkey with varying climatic conditions using the Linear, Ridge, Lasso, Smoother, Partial least, KNN and Gaussian process regression methods. The data of 2002 and 2003 years were used to obtain regression coefficients of relevant methods. The coefficients were obtained based on the input parameters. Input parameters were month, altitude, latitude, longitude and land-surface temperature (LST).The values for LST were obtained from the data of the National Oceanic and Atmospheric Administration Advanced Very High Resolution Radiometer (NOAAAVHRR) satellite. Solar radiation was calculated using obtained coefficients in regression methods for 2004 year. The results were compared statistically. The most successful method was Gaussian process regression method. The most unsuccessful method was lasso regression method. While means bias error (MBE) value of Gaussian process regression method was 0,274 MJ/m2, root mean square error (RMSE) value of method was calculated as 2,260 MJ/m2. The correlation coefficient of related method was calculated as 0,941. Statistical results are consistent with the literature. Used the Gaussian process regression method is recommended for other studies. 128 (12_OP03) Estimation of Wind Power Density with Artificial Neural Network M. Y. Aktaç1, M. Şahin2 and R. Saraçoğlu3 1 Siirt University, Department of Electrical and Electronics Engineering, Siirt, Turkey,yusufaktac@gmail.com 2 Siirt University, Department of Electrical and Electronics Engineering, Siirt, Turkey, msahin@siirt.edu.tr 3 Yüzüncü Yıl University, Department of Electrical and Electronics Engineering, Van, Turkey, ridvansaracoglu@yyu.edu.tr Industry and technology are rapidly developing with each passing day. They need energy to sustain this evolution. The demand of energy is mainly provided from fossil fuels. Unfortunately, this kind of energy reserves are consumed away day by day. Therefore, there is a need to use alternative energy sources to supply energy needs. Alternative energy sources can be listed as; solar, wind, wave, biomass, geothermal and hydro-electric power. Our country has significant potential for wind energy. Wind power density estimation is required to determine the wind potential. In this study, the wind power density was estimated by using artificial neural network (ANN) method. Forty meteorological station were used for ANN training, while eighteen meteorological stations were used to test the trained network. Network has trained according to, respectively; trainlm, trainbfg, trainscg, traincgp traincgb, traincgf ve trainoss learning algorithms. The correlation coefficient (R) and Mean bias error (MBE) of the best developed model were calculated as 0,9767 and -0,3124 W/m2 respectively. Root Mean Square Error (RMSE) was calculated as 1,4786 W/m2. In conclusion, the obtained results demonstrate that the developed model can be used to estimate the wind power density. 129 (12_OP04) Comparison of Ge, InGaAs p-n Junction Solar Cell Murat Korun, Tuğba Selcen Navruz Gazi University, Ankara, Turkey, muratkorun,selcen@gazi.edu.tr In this paper, the effect of material parameters on the efficiency of Ge and InGaAs semiconductor solar cells which are most commonly used as the sub-cell of multi-junction solar cells are investigated and the results due to these two cells are compared. The efficiency of Ge (EG=0.67 eV) solar cell which is easy to manufacture and inexpensive in cost, is compared with the efficiency of InGaAs (EG=0.74 eV) solar cell which is coming with drawback of high production difficulties and cost. The theoretical efficiency limit of Ge and InGaAs solar cells with optimum thickness were determined by using detailed balance model under one sun AM1.5 illumination. Since the band gap values of two cells are close to each other, approximate detailed balance efficiency limits of 16% for InGaAs and 14% for Ge are obtained. When drift- diffusion model is used and the thicknesses and doping concentrations are optimized, the maximum efficiency values are calculated as 13% for InGaAs and 9% for Ge solar cell. For each solar cell external quantum efficiency curves due to wavelength are also sketched and compared. 130 (12_OP05) Estimation of Global Solar Radiation by Using Machine Learning Methods M. Bolat1, M. Şahin2 1 Siirt University, Department of Electrical and Electronics Engineering, Siirt, Turkey, mehmet_bolat66@hotmail.com 2 Siirt University, Department of Electrical and Electronics Engineering, Siirt, Turkey, msahin@siirt.edu.tr In this study, global solar radiation (GSR) was estimated based on 53 locations by using ELM, SVR, KNN, LR and NU-SVR methods. Methods were trained with a two-year data set and accuracy of the mentioned methods was tested with a one-year data set. The data set of each year was consisting of 12 months. Whereas the values of month, altitude, latitude, longitude, vapour pressure deficit and land surface temperature were used as input for developing models, GSR was obtained as output. Values of vapour pressure deficit and land surface temperature were taken from radiometry of NOAA-AVHRR satellite. Estimated solar radiation data were compared with actual data that were obtained from meteorological stations. According to statistical results, most successful method was NU-SVR method. The RMSE and MBE values of NU-SVR method were found to be 1,4972 MJ/m2 and 0,2652 MJ/m2, respectively. R value was 0,9728. Furthermore, worst prediction method was LR. For other methods, RMSE values were changing between 1,7746 MJ/m2 and 2,4546 MJ/m2. It can be seen from the statistical basis that ELM, SVR, KNN and NU-SVR methods can be used for estimation of GSR. 131 (12_OP06) Development of a High-Precision Thermistor Probe for Paleo-Climate Studies K. Erkan1, E. Balkan2, F. Atikol3, and T. Başaran3 1 2 Marmara University, Department of Civil Engineering, Göztepe, İstanbul Dokuz Eylül University, Department of Geophysics Engineering, Tınaztepe, İzmir 3 Atikol Dış Ticaret, Ümitköy, Ankara Temperature-depth (T-D) logs obtained from boreholes has a number of applications in Earth sciences. They are can used for determination of continental heat flow of a region, and for geothermal applications. High resolution T-D logs are also useful for paleo-climatic studies as the subsurface records the past temperatures of the earth. A temperature logging tool can be designed with a 1 mK accuracy using thermistor type temperature sensor. In this study, development of a T-D logging tool that uses a thermistor type probe is explained. The tool measures the resistance changes in the sensor and converts it into temperature information. The cable resistance changes are eliminated using the 4-wire resistance measurement method. The tools can log boreholes down to 300m with the desired logging depth interval. The time constant of the measurement probe is less than 10 s in water which enables quick data acquisition. The tool works in surface read-out mode that allows real time monitoring of the downhole thermal regime. The tool weighs less than 40 kg which makes it very portable in order to use in different kinds of field conditions. 132 (12_OP07) Experimental Investigation of the Effect of Pure Water Temperature on Power Consumption of the PEM Electrolyser Habib Gürbüz1, Hüsamettin Akçay1, Selim Demirtürk2 1 Süleyman Demirel University, Engineering Faculty, Department of Mechanical Engineering, 32260 Isparta, Turkey 2 Uşak University, Vocational School of Technical Sciences, 6420 Uşak, Turkey habibgurbuz@sdu.edu.tr, akcay61akcay@hotmail.com, selim.demirturk@usak.edu.tr In this study, methods used in the hydrogen production examined, and then effect of water temperature on the DC power consumption of Proton exchange membrane (PEM) electrolysis unit were investigated experimentally. In the first stage of the experimental studies, the power consumption characteristics (voltage, current, and power) and the change of water temperature was detected for commercial a PEM electrolysis unit during one hour study period. In the second stage of the experimental studies, the variation of power consumption was determined when increasing above (range of 31-90 C) normal study temperatures of PEM, water temperature taken in PEM electrolysis unit. Results of experimental studies; PEM electrolysis unit was reached to regime in the end of the one hour study period and water temperature has increased to the approximately 30 C with  245.8 W power consumption. Furthermore, it was determined that the water temperature of PEM electrolysis unit can be increased up to 90 C with  227.8W power consumption. Finally, it was determined that power consumption of PEM electrolyser can be decreased 7.9 % when water temperature was increased from 30 C to 84 C. There is no effect on the power consumption of further increase than 84 C of the water temperature. Keywords: Hydrogen production methods, PEM electrolysis unit, Water temperature 133 (12_OP08) A Novel Image Processing Method for Poorly Resolved Multi Lines in EPR Spectra Mustafa Reşit Tavus1, İlkay Yıldırım2, Yunus Çelik3, Nurettin Şenyer4, Recai Oktaş5, Bünyamin Karabulut6 1 Ondokuz Mayıs University, Samsun, Turkey, mustafa.tavus@bil.omu.edu.tr 2 Biruni University, İstanbul, Turkey, iyildirim@biruni.edu.tr 3 Ondokuz Mayıs University, Samsun, Turkey, yunus.celik@omu.edu.tr 4 Ondokuz Mayıs University, Samsun, Turkey, nurettin.senyer@bil.omu.edu.tr 5 Ondokuz Mayıs University, Samsun, Turkey, recai.oktas@bil.omu.edu.tr 6 Ondokuz Mayıs University, Samsun, Turkey, bunyamin.karabulut@bil.omu.edu.tr In this study, we tried to differentiate the electron paramagnetic resonance (EPR) spectral lines from the environmental noise or other effects. To do this, a novel computational image processing method based on area picking under the spectral curves was established. The method was applied specifically to the EPR spectra of a vanadyl doped compound containing many lines having both types of data: meaningful and meaningless. The provided technique can be expanded to all types of EPR spectra. Both positive and negative peak values in the analog spectra were detected and transferred to digital environment by using the image processing technique. The analog structures of the spectra were reobtained by using curve fitting methods after the digital spectra were implemented some basic morphological image processing techniques. The results were satisfactory comparing with the analog or poorly resolved spectra. 134 (12_OP09) Artificial Intelligence Techniques for the Estimation of Direct Methanol Fuel Cell Performance Abdulsamet Haşıloğlu1* , Mahmut Bayramoğlu2 , Ömür Aras3 1 Department of Computer Engineering, Atatürk University, Erzurum 25240, Turkey asamet@atauni.edu.tr 2 Department of Chemical Engineering, Gebze Technical University, Kocaeli 41400, Turkey mbayramoglu@gtu.edu.tr 3 Department of Chemical Engineering, Gebze Technical University, Kocaeli 41400, Turkey oaras@gtu.edu.tr Artificial neural networks and neuro-fuzzy inference systems are well known artificial intelligence techniques used for black-box modelling of complex systems. In this study, Feedforward artificial neural networks (ANN) and adaptive neuro-fuzzy inference system (ANFIS) are used for modelling the performance of direct methanol fuel cell (DMFC). Current density (I), fuel cell temperature (T), methanol concentration (C), liquid flow-rate (q) and air flowrate (Q) are selected as input variables to predict the cell voltage. Polarization curves are obtained for 35 different operating conditions according to a statistically designed experimental plan. In modeling study, various subsets of input variables and various types of membership function are considered. A feed -forward architecture with one hidden layer is used in ANN modeling. The optimum performance is obtained with the input set (I,T,C,q) using twelve hidden neurons and sigmoidal activation function. On the other hand, first order Sugeno inference system is applied in ANFIS modeling and the optimum performance is obtained with the input set (I,T,C,q) using sixteen fuzzy rules and triangular membership function. The test results show that ANN model estimates the polarization curve of DMFC more accurately than ANFIS model. Keywords: Direct Methanol Fuel Cell, Artificial Neural Networks, Neuro-Fuzzy, Modelling, Performance 135 (12_OP10) The Heat Recovery with Heat Transfer Methods from Solar Photovoltaic Systems A. N. Özakın1, S. Karslı2, F. Kaya3 and H. Güllüce4 1 Atatürk University, Erzurum, Turkey, ahmet.ozakin@atauni.edu.tr 2 Atatürk University, Erzurum, Turkey, skarsli@atauni.edu.tr 3 Atatürk University, Erzurum, Turkey, ferhat.kaya@atauni.edu.tr 4 Atatürk University, Erzurum, Turkey, hgulluce@atauni.edu.tr Although there are many fluctuations in energy prices, they seems like rising day by day. Thus energy recovery systems have increasingly trend. Photovoltaic systems converts solar radiation directly into electrical energy thanks to semiconductors. But due to the nature of semiconductors, whole of solar energy cannot turn into electrical energy and the remaining energy turns into waste heat. The aim of this research is evaluate this waste heat energy by air cooling system. So, the energy efficiency of the system will be increased using appropriate heat transfer technologies such as fin, turbulator etc. 136 (12_OP11) Using Phase Change Materials to Reduce the Cold Start and Warm-up Problems of DI Diesel Engines F. Kaya 1, M.A. Ceviz 2, H. Güllüce 3, S. Karslı4 and A. N. Özakın 5 1 Atatürk University, Erzurum, Turkey, ferhat.kaya @atauni.edu.tr 2 Atatürk University, Erzurum, Turkey, aceviz@atauni.edu.tr 3 Atatürk University, Erzurum, Turkey, hgulluce @atauni.edu.tr 4 Atatürk University, Erzurum, Turkey, skarsli @atauni.edu.tr 5 Atatürk University, Erzurum, Turkey, ahmet.ozakin @atauni.edu.tr Cold start problem is still one of the most important negative behavior of diesel engines especially in cold climates. Diesel engines become difficult to start at low ambient air and engine block temperatures and the production of pollutant exhaust emissions increase during warm-up period. In this study, the use of phase change materials (PCMs) has been proposed in order to facilitate the cold start and to improve the exhaust emission characteristics during warm-up period of diesel engines. Engine coolant was selected as the heat source in the experiments. After an appropriate warm-up period attaining the engine to the steady-state operating temperature, the waste heat from the coolant was transferred to PCM embed in a heat exchanger for changing the phase. Then, the latent heat stored in PCM was transferred to the engine intake air by passing from the heat exchanger to increase the temperature. Using of a heat exchanger with PCM on the air intake line of the experimental diesel engine caused an increase in the temperature of intake air, and thus improved the cold start cranking period durations and the engine exhaust emission characteristics during warm-up 137 (12_OP12) The Effects on Heat Saving of Lightweight Aggregate Based on Pumice H. Güllüce 1, F. Kaya 2, A.N. Özakın 3 and S. Karslı 4 1 Atatürk University, Erzurum, Turkey, hgulluce @atauni.edu.tr Atatürk University, Erzurum, Turkey, ferhat.kaya @atauni.edu.tr 3 Atatürk University, Erzurum, Turkey, ahmet.ozakin @atauni.edu.tr 4 Atatürk University, Erzurum, Turkey, skarsli @atauni.edu.tr 2 In building construction substantially natural materials are used. The pumice is a very important building material which used as a lightweight aggregate. The pumice production costs are lower than the brick production costs. Because there isn’t cooking process in the pumice production. Therefore both its production is more economical and the pollution potential of it is low. The low thermal conductivity coefficient of this material provides energy saving considerably. In this research, it was analyzed the heat insulation specifications of the pumice materials and the pumice configuration addition plaster and lime. For these pumice configurations, thermal conductivity’s effect on energy savings was investigated. 138 (12_OP13) Importance of Renewable Energy in Cold Climate Regions S. Karslı 1, A. N. Özakın 2, F. Kaya3 and H. Güllüce4 1 2 Atatürk University, Erzurum, Turkey, skarsli @atauni.edu.tr Atatürk University, Erzurum, Turkey, ahmet.ozakin @atauni.edu.tr 3 Atatürk University, Erzurum, Turkey, ferhat.kaya@atauni.edu.tr 4 Atatürk University, Erzurum, Turkey, hgulluce@atauni.edu.tr Fundamental definition of the renewable energy is; the source of energy must be in the nature, sustainable and clean. The fossil sources which used commonly in the industry has restricted reserves and the polluting potential. The main renewable sources are solar energy, wind power, geothermal energy, hydrogen energy, hydraulic energy and biomass energy. The scope of this research covers of detect the current problems about energy costs and pollution conditions connected with cold climate regions. In this study, it was discussed on the subject technical and legal obstacles. 139 POSTER SESSIONS 01_ Atomic, Molecular and Plasma Physics 140 (01_PP01) Why Do We Need Nuclear Energy in Turkey? Asli Araz1, Fatma Akdemir1, Ferdi Akman2 and Rıdvan Durak1 1 Atatürk University Faculty of Sciences Department of Physics, 25240, Erzurum,Turkey 2 Bingöl University Faculty of Sciences Department of Physics, 12000, Bingöl,Turkey asliaraz25@gmail.com Nuclear energy is the energy in the nucleus, or core, of an atom. This energy can be released as heat from a chain reaction in a radioactive element such as uranium. Although Turkey has rich uranium reserves, Turkey has had plans for establishing nuclear power generation since the early 1960s. Today, plans for nuclear power are a key aspect of the country's aim for economic growth. In this study, nuclear energy current situation in Turkey is examined in terms of its scientific, social and economic aspects. Does that mean strength for a country to have a nuclear power plants? What does society think about nuclear power plants? Based on these two questions, the necessity of nuclear energy in a country is questioned and is examined whether is social benefits. It is discussed taking into account the effects on the environment of nuclear power plants and is presented solutions for it. 141 (01_PP02) Structural Study of Neurotransmitter “Glutamine” by ab Initio Methods A. Boutasta Amel1, A. Benosman1 1 Laboratoire Physique Théorique -B.P 119 Chetouane 13000 Tlemcen, Algérie aboutasta@gmail.com The design of the drugs can be made rational when we know the three-dimensional structure of the receiver. It during in the majority of the cases, the structure of the receiver is not known. In this work we propose to determine the physicochemical properties of the neurotransmitter Glutamine (who with chemical formula C5H10N2O3 in its solid state. For that, one calculated the modes of vibration of the IR spectrum by the methods ab-initio based on the DFT (the Density Functional Theory), using the field of forces B3LYP. 142 (10_PP03) Investigation of K X-Ray Intensity Ratios of Some 4d Transition Metals Depending on the Temperature E. Kavaz1, N. Ahmadi2, Y. Özdemir1, M. Ertuğrul1, N. Ekinci1 1 Atatürk University, Erzurum, Turkey 2 Islamic Azad University, Tabriz, Iran e-mail adress:esrakvz@gmail.com In this work, we have studied the intensity ratios K  K depending on the temperature for transition elements Mo, Nb, Zr and Y by 59.5 keV γ-rays from a 100 mCi 241Am radioisotope point source. The K𝛼 and Kβ emission spectra of Mo, Nb, Zr and Y were measured by using a Si (Li) solid-state detector at temperature between 40-400 C.   cross-sections, K  K intensity ratios and FWHM (Full width at half maximum)of the elements have been calculated. Temperature-dependent changes of the parameters are given in the graphical forms. Based on the results obtained, K  K X-ray intensity ratios of the elements are dependent on the temperature. It is shown that  of Mo, Nb and Zr have more increase rate than K increasing temperature. For Y,   -sections firstly decrease, then increase. In general, K  K X- ray intensity ratios tends to increase with increasing temperature. Some shifts are observed in Kα and Kβ emission spectra of Mo and Y. These results are attributed to the XRF studies of transition metals. Keywords: K  K X-ray intensity ratio, transition element, temperature. 143 (01_PP04) Measurement of Lβ / Lα Intensity Ratios of Some Lanthanide Elements (Er, Gd, Dy, Lu And Yb) at Different Temperatures E. Cinan, E. Kavaz, N. Ekinci, Ö. Ulusoy, Y. Özdemir Department of Physics, Science Faculty, Atatürk University, 25240, Erzurum, Turkey esra.dari@atauni.edu.tr Lanthanides are a family of 15 chemical elements whose atomic numbers range from 57 to 71. The 15 elements include: lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium ™, ytterbium (Yb) and lutetium (Lu). X-ray fluorescence (XRF) is an analytical technique which uses the interaction of x-rays with a target material to determine its elemental composition (i.e. the range of elements present and their proportions). In the study, X-ray intensity ratios of some lanthanide elements (Er, Yb, Gd, Dy and Lu) were investigated depending on the temperature by exciting 59, 54 keV energy gamma rays radiated from 100 mCi 241Am radioisotope sources. Lα and Lβ emission spectras of these elements were measured using a solid-state Si (Li) detector at a temperature between 50-400 0C. Lβ / Lα intensity ratios and FWHM (full width at half maximum) values were calculated for each element. The variations of each parameter with temperature have been shown graphically. From these results, it has been seen that Lβ / Lα intensity ratios of some lanthanide elements varied with temperature. 144 (01_PP05) Calculated Optimized Structures and Hyperfine Coupling Constants of Some Radical Adducts of 5,5-Dimethyl-1-Pyrroline N-Oxide (DMPO) in Benzene Solution Ş. Nardali1, M. Karakaya2 and F. Ucun1 1 Department of Physics, Faculty of Arts and Sciences, Suleyman Demirel University, 32260 Isparta, Turkey, sefiknardali@gmail.com, fatihucun@sdu.edu.tr 2 Department of Energy Systems, Faculty of Engineering and Architecture, Sinop University, 57000 Sinop, Turkey, mkarakaya@sinop.edu.tr The optimized structures of some radical adducts of 5,5-dimethyl-1-pyrroline N-oxide (DMPO) were determined by the DFT(B3LYP, B3PW91 and PBEPBE) and Hartree-Fock methods with 6-311++G (d,p) and LanL2DZ basic sets. As trapped radicals, F, OH, CF3, CH2OH and OC2H5 in benzene solution were used. The calculated isotropic hyperfine coupling constants of all the trapped radicals were compared with the corresponding experimental data. The hyperfine coupling constant due to the β proton of the nitroxide radical was seen to be consist with the McConnel’s relation ɑβ = B0+B1cos2θ and, to be effected with the opposite spin density of oxygen nucleus bonded to the nitrogen. From all the calculated data, it was concluded that in hyperfine calculations the DFT(B3LYP)/6-311++G (d,p) level is superior computational quantum model relative to the used other level. Also, the study has been enriched by the computational of the optimized geometrical parameters, the hyperconjugative interaction energies, the radical’s binding energies and the atomic charges and spin densities for all the radical products. 145 (01_PP06) Basic Sciences Agonize In Turkey! Fatma Akdemir1, Asli Araz1, Ferdi Akman2 and Rıdvan Durak1 1 Atatürk University Faculty of Sciences Department of Physics, 25240, Erzurum, Turkey 2 Bingöl University Faculty of Sciences Department of Physics, 12000, Bingöl, Turkey fatma_akdemir25@hotmail.com In this study, change from past to present in the departments of Physics, Chemistry, Biology and Mathematics which is considered as the basic sciences in Turkey were tried to be shown. It was emphasized the importance of basic science for the country and the status of our country were discussed with a critical perspective. The number of academic staff, the number of students, opened quotas according to years for these four departments at universities were calculated and analysis of the resulting changes were made. To these four departments in examined graphics were showned changes close to each other. Especially a significant change was observed in the physics department. The job employs young people who have graduated from basic science is also an issue that must be discussed. There are also qualitative results of this study that we have discussed as quantitative. Psychological problems revealed by unemployment have become a disease young people carry in their most efficient time. This study was focused on more quantitative results. The causes of obtained results have tried to explain and the solution proposals were presented. 146 (01_PP07) Investigation of Chemical Effect on the Absorption Parameters for Some Selected Indium Complex at 59.54 keV Photon Energy F. Akman1, R.Durak2, F. Akman3, M. R. Kaçal4, M. F. Turhan5, F. Akdemir2 and A. Araz2 1 2 Bingöl University, Bingöl, Turkey, fakman@bingol.edu.tr Atatürk University, Erzurum, Turkey, rdurak@atauni.edu.tr, fatma_akdemir25@hotmail.com asliaraz@gmail.com 3 Bitlis Eren University, Bitlis, Turkey, fbezgin@beu.edu.tr 4 Giresun University, Giresun, Turkey, mustafakacal@hotmail.com 5 Afyonkocatepe University, Afyonkarahisar, Turkey, m.f.turhan@hotmail.com The mass attenuation coefficient, molecular, atomic and electronic cross sections, effective atomic number and electron density are the basic quantities required in determining the penetration of X-ray or gamma photons in a material. These parameters are used in X-ray fluorescence surface chemical analysis, radiation physics, dosimetric computations for health physics, elemental analysis, basic studies of nuclear physics, etc. In composite materials such as soil, plastic, complex, alloy, the atomic number cannot be represented uniquely across the entire energy region, as in the case of elements, by a single number. This number is defined as effective atomic number in composite materials. The electron density is defined as the numbers of electrons per unit mass. In this work, the mass attenuation coefficients, molecular, atomic and electronic cross sections, effective atomic numbers and electron densities of some selected indium complex such as C5H10InNO9, C3H6InNO9 and C9H10InNO9, were determined with experimentally and theoretically using transmission geometry at 59.54 keV photon energy which emitted from 241 Am annular source. The results were compared with the theoretical calculations which obtained from the WinXCOM program. Also, the results were interpreted based on some chemical parameters such as energy gap, ionization energy, electron affinity and global electrophilicity values of malonate, dimethylmalonate and phenylmalonate which were calculated using the density functional theory (DFT/B3LYP). 147 (01_PP08) Determination of K-Li Sub-Shell, Total K-L and Total K-M shell Vacancy Transfer Probabilities for Europium, Gadolinium and Terbium F. Akman1, R. Durak2, M. R. Kaçal3, M. F. Turhan4 1 Bingöl University, Bingöl, Turkey, fakman@bingol.edu.tr Atatürk University, Erzurum, Turkey, rdurak@atauni.edu.tr 3 Giresun University, Giresun, Turkey, mustafakacal@hotmail.com 4 Afyonkocatepe University, Afyonkarahisar, Turkey, m.f.turhan@hotmail.com 2 There are different ways to produce a vacancy in an atom such as photoelectric effect, Compton scattering, triplet production, charged particle Coulomb interaction, internal conversion, electron capture, positron annihilation and Auger effect. If an atom is bombarded with photons, electrons or protons which have enough energy for the ionization, the shell electron leaves the electronic cloud and the atom loses an electron through creation of a vacancy. The vacancy is filled either by emission of an X-ray, by Auger transition or CosterKronig transition which is special case of the Auger transition. These transitions are called radiative and non-radiative processes, respectively. In this work, to obtain the K-Li (i=2,3), total K-L and total K-M shell vacancy transfer probabilities for Europium, Gadolinium and Terbium elements, the experimental values of Kα1, Kα2, Kβ'1 and Kβ'2 X-ray production cross sections, K shell fluorescence yields and Kβ/Kα, Kα2/Kα1 and Kβ'1/ Kα1 intensity ratios were determined at 59.54 keV photon energy from a 100 mCi Am241 annular source using excitation geometry and a Si(Li) detector system. The experimental results were compared with theoretical values of Hartree-Slater and Hartree-Fock and other available experimental results. 148 (01_PP09) Solvatochromic Behaviors of (2-Phenoxybenzylideneamino) Phenolderivatives G. Pirbudak1, Y. Gülseven Sidir1, İ. Sidir1, H. Berber2 1 Bitlis Eren University, Faculty of Science and Arts, Department of Physics, 13000, Bitlis, Turkey 2 Anadolu University, Faculty of Science, Department of Chemistry, 26470,Eskişehir,Turkey Schiff bases compounds have importance in various fields such as imaging systems, optical computers and organic electronics. UV-visible and fluorescence spectra of the three different of 2- phenoxybenzylideneamino) phenol derivatives are measured in 28 different polarity solvent. The maximum wavelength peaks analysis is performed and electronic structure is evaluated. UV electronic absorption spectra indicate four electronic transition bands. The first, second and third electronic transition bands are π→π* electronic transitions born out from conjugations of the phenyl rings, from -N = CH- group and conjugation between -N = CH- with the phenyl rings, respectively. The forth band is observed in some solvents such as benzonitrile, o-xylene, toluene, acetone, DMSO, benzen, eiethyl ether and 1,4-dioxane. This transition corresponds to n→π* transitions that caused by -N=CH- and solvent interactions, or excited state intra molecular proton transfer. The third electronic band displays bathochromic shifts both in electronic absorption and emission spectra.The first band in the fluorescence spectra can be attributed to π*→π electronic transition due toN=CH- and phenyl ring.The second band in fluorescence spectra are observed in some solvents such as benzene, diethylether, dichloromethane, iso-butanol, chloroform, 1-heptanol, 1-butanol, iso-butanol, npentane and n-hexane and are correspond to excited state intra molecular proton transfer which arecaused by N=CHgroup electron. Solvent-solute interactions are defined with using multi linear regression analysis (MLRA) by KamletTaft parameter,Catalan parameter, Marcus optical dielectric function and ReichardtDimroth solvent parameter. Acknowledgment: The authors greatly appreciate BitlisEren University Research Foundation for financial support. Project number: BEBAP-2014.05. 149 (01_PP10) Measurement of L3 Sub-Shell to M, N, O Shell Radiative Vacancy Transfer Probabilities for Ho, Lu and Hg Elements M. F. Turhan1, F. Akman2, M. R. Kacal3 ve R. Durak4 1 Department of Medical Imaging Techniques, Atatürk Vocational School of Health Service, Afyon Kocatepe University, Afyonkarahisar, 03200, Turkey, m.f.turhan@hotmail.com 2 Department of Electronic Communication Technology, Vocational School of Technical Sciences, Bingöl University, Bingöl, 12000, Turkey, ferdiakman55@hotmail.com 3 Giresun University, Arts and Sciences Faculty, Department of Physics, 28100 Giresun, Turkey, mustafakacal@hotmail.com 4 Department of Physics, Atatürk University, Erzurum, 25240, Turkey, rdurak@atauni.edu.tr The radiative vacancy transfer probabilities from L3 sub-shell to M, N, O sub-shells were measured for the elements Ho, Lu and Hg. To obtain related parameters, we used 59.54 keV gamma photons of 241Am radioactive source. Emitted L X-ray photons from targets were collected by means of a Si(Li) detector with resolution of 160 eV at 5.9 keV. The present results are generally in a good agreement with theoretical calculations and the other results obtained in the literature, within their range considering experimental uncertainty. 150 (01_PP11) Determination of K Shell Fluorescence Parameters for Some Elements in the Atomic Number Range 50≤Z≤60 M. F. Turhan1, F. Akman2, M. R. Kacal3 and R. Durak4 1 Department of Medical Imaging Techniques, Atatürk Vocational School of Health Service, Afyon Kocatepe University, Afyonkarahisar, 03200, Turkey, m.f.turhan@hotmail.com 2 Department of Electronic Communication Technology, Vocational School of Technical Sciences, Bingöl University, Bingöl, 12000, Turkey, ferdiakman55@hotmail.com 3 Giresun University, Arts and Sciences Faculty, Department of Physics, Giresun, 28100, Turkey, mustafakacal@hotmail.com 4 Department of Physics, Atatürk University, Erzurum, 25240, Turkey, The fluorescence cross sections, fluorescence yields, level widths and intensity ratio for some elements in the atomic range 50≤Z≤60 were measured. The targets were excited using photons of 59.54 keV emitted from an Am-241 (about 100 mCi) radioactive source. Emitted K X-ray photons from targets were collected by means of a Si(Li) detector with resolution of 160 eV at 5.9 keV. The present results are generally in a good agreement with theoretical calculations and the other results obtained in the literature. 151 (01_PP12) Electronic and Nonlinear Optical Properties of Some Halothiophenes Mehmet Bahat1 and Fatma Dadakdeniz2 1 Gazi University, Physics Department, Ankara, Turkey, bahat@gazi.edu.tr 2 Gazi University, Physics Department, Ankara, Turkey Thiophene based polymers have attracted a great deal of attention from scientific and technological groups because of many applications such as electronic and optical devices, sensors, and batteries. In this report, we present and analyse the results of theoretical calculations of electronic and nonlinear optical properties for all possible F, Cl and Br substituted thiophene molecules. The calculated properties are electronic energy, HOMOLUMO (H-L) energies, dipole moments, static polarizability, anisotropy of polarizability, and first hyperpolarizability. Theoretical calculations were performed at B3LYP/6-311++G(2d,p) level. To analyze the effects of the type, number and position of halogen substituents (F, Cl, Br) on the electronic and nonlinear optical properties of thiophene ring, some conclusions can be drawn as follows. All halo thiophenes have planar structures.The difference between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) energies represents energy gap. For thiophene, the calculated H-L value is 5.99 eV. The average value of the energy gap decrease with substituents, but there is not position and substituent number dependence. The value of dipole polarizability for fluorothiophens same as in the unsubstituted thiophene 62 au. But an increase in the number of substituted chlorine and bromine atoms on the thiophene ring increases dipole polarizability the values ranges from 62 to 151 au. The calculated hyperpolarizability shows that halogenated thiophens have significant changes up to 340 au, compared with unsubstituent thiophene’s value of 11 au. 152 (01_PP13) Structure, Vibrational Assignment and Electronic Properties of Some Furanocoumarins Mehmet Bahat1, Büşra Aydın Deliönü2 and Hamit Alyar3 1 Gazi University, Physics Department, Ankara, Turkey, bahat@gazi.edu.tr 2 Gazi University, Physics Department, Ankara, Turkey 3 Karatekin University, Physics Department, Çankırı, Turkey, halyar@karatekin.edu.tr When furan ring fused with coumarin molecule, two isomers are produced known as psoralen and angelicin as a subclass of furanocoumarins. Psoralen occurs naturely in all citrus fruits, fig, celery and parsley. Angelicin and its some derivatives occurs more frequently in Umbelliferae plants. Because of their occurance in everyday food, it is important to determine their physical properties known as also quantum mechanical descriptors. Firstly, optimized geometries of psoralen and angelicin have been obtained through geometry optimization using density functional theory at the B3LYP/ 6-311++G(d,p) and B3LYP/ 6-31+G(d) levels. Later IR and Raman vibrational spectra also calculated at both level. Then normal mode analysis, vibrational assignment, carried out by scaling quantum mechanical (SQM) calculations. Secondly, other quantum mechanical descriptors such as dipole moment, HOMO-LUMO energy, polarizability, anisotropic polarizability and first hyperpolarizability were also calculated at the B3LYP/ 6-311++G(2d,p) level. 153 (01_PP14) Structure, Electronic and Nonlinear Optical Properties of Furyloxazoles and Thienyloxazoles Özlem Dağlı1, Rabia Gök2, Mehmet Bahat3 and Akif Özbay4 1 Gazi University, Faculty of Medicine, Ankara, Turkey, ozlem_150184@hotmail.com 2 Gazi University, Physics Department, Ankara, Turkey 3 Gazi University, Physics Department, Ankara, Turkey, bahat@gazi.edu.tr 4 Gazi University, Physics Department, Ankara, Turkey, aozbay@gazi.edu.tr Thiophene, furan and oxazole are five membered heterocyclic molecules. They have been studied extensively in the literature because of their wide applications in industry. When two units connected together by a single bond they produce new composite molecules such as furyloxazoles and thienyloxazoles. Each of them have six isomers. It is important to understand the molecular structure and physical quantities to provide guidelines for the development of new materials. Firstly, the equilibrium geometries of 12 isomers of title compounds have been obtained through geometry optimization using density functional theory at the B3LYP/ 6-311++G(2d,p) level. The conformational analysis of 12 compounds have been studied as a function of inter-rings C-C dihedral angle varying between 0o and 180o with a step of 15o. Secondly, electronic and NLO properties such as dipole moment, HOMOLUMO energy, polarizability, anisotropic polarizability and first hyperpolarizability were also calculated for all furyloxazole and thienyloxazole isomers at the B3LYP/ 6-311++G(2d,p) level. The calculated absolute HOMO-LUMO energy values ranges from 4.48 to 7.57 eV. The dipole polarizability values ranges from 60 to 115 au. The calculated hyperpolarizability values ranges from 45 to 280 au. that shows very low nonlinear optical properties. 154 (01_PP15) The Chemical Effect on the Fluorescence Yield Parameters of Ligands of Malonic Acid[(Ch2(Cooh)2)] and Phenylmalonic Acid [C6h5nch(Cooh)2] M. R. Kaçal1, E. G. Özdemir2, F. Akman3, C. Baydere4 1 Giresun University, Arts and Sciences Faculty, Department of Physics, 28100, Giresun/Turkey, mustafakacal@hotmail.com 2 Gazi University, Polatlı Science and Arts Faculty, Physics Department, 06900 Polatlı, Ankara/Turkey evrengorkemozdemir@gmail.com 3 Bingol University, Vocational School of Technical Sciences, Department of Electronic Communication Technology, 12000, Bingöl/Turkey, fakman@bingol.edu.tr 4 Ondokuzmayıs University, Arts and Sciences Faculty, Department of Physics, 55139, Samsun/Turkey, cemle28baydere@hotmail.com In the present work, the ligands of Ligands of Malonic Acid[(CH2(COOH)2)] and Phenylmalonic Acid [C6H5NCH(COOH)2] derivatives were obtained by the slow evaporation and neutralization method. The ligands were coordinated to the metal Er and Dy atoms. The K shell fluorescence yields of Er and Dy atoms and their metal complexes obtained by the coordination were measured at 59,54 keV incident photon energy. The experimental K shell fluorescence yields have been determined using the measured X-ray production cross sections and theoretical K shell photoionization cross section values. The results were compared with theoretical, the semi-empirical and recommended values. The changing in chemical structure of the pure and metal complexes depending on the chemical condition was found to cause some changes on the measured fluorescence yield parameters. 155 (01_PP16) Theoretical and Experimental Studies on Molecular Structures and Vibrational Properties of New Compounds Containing Silver Mustafa Tuğfan Bilkan 1, 2, Şenay Yurdakul 1 1 Department of Physics, Faculty of Science, Gazi University, 06500 Ankara, Turkey, mtbilkan@gazi.edu.tr 2 Department of Physics, Faculty of Science, Karatekin University, 18000 Çankırı, Turkey, senayy@gazi.edu.tr The two new silver containing complexes of N-(pyridin-2-yl)pyridin-2-amine (NDPA) molecule has been synthesized for the first time and characterized by elemental analysis, FTRaman and FT-IR (at far and mid regions) spectroscopies. The optimized geometries of the compounds were obtained by using DFT/B3LYP method with LANL2DZ basis set for the (C10H9N3).AgNO3 and B3LYP method with DGDZVP basis set for the (C10H9N3).AgClO4. The vibrational frequencies and its IR and Raman intensities were determined by theoretical methods. Also the HOMO-LUMO energies, thermochemical properties and atomic charges for the compounds were obtained in same level of theory. The experimental and theoretical results show that the silver atoms are coordinated to ligands in bidentate fashion. Also, in the structures of compounds there are intra-molecular interactions. The oxygen atoms of nitrate and perchlorate are bound to ligand via hydrogen bonds. 156 (01_PP17) Experimental and Theoretical Investigations of Solvent Effects on Crystal Structure and Vibrational Frequencies Of 2,2ʹ-Dipyridylamine Mustafa Tuğfan Bilkan 1, 2, Şenay Yurdakul 1 1 Department of Physics, Faculty of Science, Gazi University, 06500 Ankara, Turkey, mtbilkan@gazi.edu.tr 2 Department of Physics, Faculty of Science, Çankırı Karatekin University, 18000 Çankırı, Turkey, senayy@gazi.edu.tr The solvent effects on crystal structure, electronic and thermochemical properties of 2,2ʹDipyridylamine were investigated by using Density Functional Theory/B3LYP and 6-31G(d) basis set. The crystal structure of 2,2ʹ-Dipyridylamine was synthesized by chemical synthesis methods. Experimental FT-IR and FT-Raman spectra in Dichloromethane solution were recorded and compared with solid phase data. The wavenumbers and intensities of the vibrational frequencies of optimized geometric structure were computed in vapor and solvation phases. It is seen from the experimental and theoretical studies that the structural, vibrational and electronic properties are dependent on the solvent effects. 157 (01_PP18) Quantum Chemical Studies Of Solvent Effects on Molecular Structure and Vibrational Frequencies of Theobromine Mustafa Tuğfan Bilkan 1, 2, Şenay Yurdakul 1 1 Department of Physics, Faculty of Science, Gazi University, 06500 Ankara, Turkey, mtbilkan@gazi.edu.tr 2 Department of Physics, Faculty of Science, Çankırı Karatekin University, 18000 Çankırı, Turkey, senayy@gazi.edu.tr The solvent effects on physical and chemical properties of Theobromine were examined by using Density Functional Theory/B3LYP method with 6-311++ G(d,p) and LanL2DZ basis sets in polar protic, polar aprotic and nonpolar solvents. DFT B3LYP combined with polarized continuum model (PCM) was employed to characterize the solvent effects. The optimized molecular structures were determined in the solvents. The wavenumbers and intensities of the vibrational frequencies of optimized geometric structures were computed in vapor and solvation phases. Furthermore, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) energies were calculated. The results show that the structural, vibrational and electronic properties of Theobromine are affected by the solvent effect. 158 (01_PP19) Measurement of the X-Ray Fluorescence Parameters for Ag-Cu Alloys with the EDXRF Method Kazım Karabulut1, Oğuz Kağan Köksal1, Gökhan Apaydin1, Erhan Cengiz1, Ömer Söğüt 2 1 Karadeniz Technical University, Trabzon, Turkey, okoksal@ktu.edu.tr, 2 KahramanmaraĢ Sütçü Ġmam University, KahramanmaraĢ, Turkey In this study, K shell X-ray production cross-sections and fluorescence yields of Ag and Cu elements were investigated for the Ag-Cu thin film alloys using the ED-XRF technique. The samples were excited by 59.5 keV γ-rays emitted from 241Am radioisotope source and K Xrays emitted from samples were counted by means of Ultra-LEGe detector with a resolution 140 eV at 5.9 keV. The obtained values from this study have been compared with theoretical values. It was observed that differences between the XRF parameters are not depend on the concentrations of the elements in the alloys. Keywords: EDXRF, Alloy, Fluorescence Parameters 159 (01_PP20) An X-ray Diffraction (XRD) and X-ray Fluorescence (XRF) Investigation of Archaeological Tooth Enamel Özgül Karatas1, Erdal Aras2, Ahmet Kılıç3 1 Nigde University, Faculty of Science and Letters, Nigde, Turkey, ozgulkaratass@gmail.com 2 Gazi University, Faculty of Science, Ankara, Turkey, erdalaras@gazi.edu.tr 3 AnkaraUniversity, Faculty of Science, Ankara, Turkey, kilica@gmail.com X-ray fluorescence (XRF) is a non-destructive method that provides useful elemental information about specimens without causing specimen damage or requiring extra specimen preparations. XRD is used to investigate the changes of crystalline phases in samples, its analyses should provide further information regarding the mineralogical composition of the fossil enamel, dentin and bone. In this study, XRD and XRF results obtained for archaeological tooth enamel samples was investigated. These archaeological samples were collected from Koskhoyuk (Nigde, Turkey) archaeological site and then prepared at laboratory for measurements. XRD-measurements have been carried out in Ankara University Solid State Laboratory by using Rigaku MiniFlex II XRD Spectrometer. XRF-measurements have been carried out in Turkey Atomic Energy Agency (TAEK) by using Philips-Axios WD-XRF Spectrometer, working at 25kV and 160mA. The obtained results have been interpreted and compared with literature. 160 POSTER SESSIONS 02_Solid State and Nano Physics 161 (02_PP01) Effect of Thermal Annealing and Sample Temperature on Electrical Characteristics of Ni/N-Gan Schottky Contacts Abdulmecit Türüt1, Nezir Yıldırım2 and Kadir Ejderha3 1 İstanbul Medeniyet University, Faculty of Sciences, Department of Engineering Physics, 34720 İstanbul, Turkey, abdulmecit.turut@medeniyet.edu.tr 2 Bingöl University, Faculty of Sciences and Arts, Department of Physics, 12000 Bingöl, Turkey, nyildirim@bingol.edu.tr 3 Bingöl University, Vocational High School of Technical Sciences, 12000, Bingöl, Turkey, kadir2538@gmail.com It has been obtained detailed information about the conduction process of thermally annealed Ni/n-GaN Schottky diodes (SDs) at 400, 500, 600 and 700 0C by us. The values of the diode parameters such as the ideality factor (n) and barrier height Φb have been determined by thermionic emission (TE) equation within the measurement temperature range 80-400 K by the steps of 20 K in the dark. The values of n and Φb at room temperature have been obtained to be 2.14, 0.80 eV; 1.85, 0.75 eV; 1.43, 0.73 eV; 1.99, 0.56 eV and 2.72, 0.51 eV for as-deposited, 400, 500, 600 and 700 0C annealed diodes from the results of the I-V measurements respectively. It has been seen for the non-annealed and annealed samples that the Φb increased and n decreased with increasing sample temperature. Keywords: Schottky barrier diodes, Metal–semiconductor contacts, Barrier height, GaN, Thermal annealing 162 (02_PP02) The Effect Capacitance of Insulator Layer Between Semiconductor and Metal Structure İ. Orak1, 2, A. Koçyiğit3* 1 Bingöl University, Vocational School of Health Services,12000 Bingöl, Turkey, ikramorak@gmail.com 2 Bingöl University, Faculty of Sciences and Arts, Department of Physics, 12000 Bingöl, Turkey, 3* Igdir University, Engineering Faculty, Department of Electrical Electronic Engineering, 7600 Igdır, Turkey, adem.kocyigit@igdir.edu.tr Recently, insulator layers have been studied its importance in electronic and optoelectronic devices. Its important come from its so high dielectric constant, storage layer property and effect of capacitance. For this reason, two samples of Si3N4 were deposited with PECVD technique on p-type Si; first is about 5 nm thickness and the other is about 50 nm. The thicknesses of Si3N4 were adjusted by an elipsometre and obtained two different devices. It was investigated the thickness effect of the Al/Si3N4/p type Si devices and acquired the capacitance-voltage and conductance–voltage characteristics of the device structure in the frequency and applied bias voltage ranges of 10 kHz to 1 MHz and −5 V to +5 V, respectively, at room temperature. Their electrical characterizations were investigated and compared using the forward and reverse bias C–V and G-V measurements. The capacitance values decreased and conductance values increased with increasing frequencies. The Si3N4 layers influenced characterizations of the devices. Especially the C-V characterizations have shown that it is similarly memristor structure. It was also measured C-V characterization under illumination condition at 500 kHz and room temperature. The interface states (Nss), the effect of series resistance (Rs) and both on C–V and G−V characteristics were explained. 163 (02_PP03) The Characterization of N- Inse Single Cyristal B. Gürbulak1, A. Ashkhasi1, S. Z. Erzeneoğlu1, M. Şata1, S. Duman1 and A. Mavi 2 1 Department of Basic Sciences, Faculty of Sciences, Erzurum, Technical University, 25240, Erzurum, Tureky 2 Department of Physics Education, Kazım Karabekir Education Faculty, Atatürk University, 25240, Erzurum, Turkey Undoped InSe single crystal has been grown by using the Bridgman/Stockbarger method. There is no cracks or voids on the surface of ingots. Samples have been cleaved along the cleavage planes (001). The freshly cleaved crystals have mirror-like surfaces even without using mechanical treatment. The structure and lattice parameters of the undoped InSe semiconductor have been analyzed using a X-ray diffractometer (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that the InSe crystals has hexagonal structure and calculated lattice constants have been found to be a=4.002 Å and c=17.160 Å. The crystallite size has been calculated to be 42-155 nm for InSe from the SEM result. The residual strain (10.19x10-4 lin-2 m -4 ) and dislocation density (7.92x1014 lin m-2 ) values have been calculated using powder XRD results (004). It has been observed from EDX result that InSe contains In=57.04 %, Se =38.46% and O= 4.50%. These results are in a good agreement with the ones obtained from EDX analysis. Keywords: InSe, Growth, Single crystals 164 (02_PP04) Licopo4 Nanocomposites as 4.8 V Cathode For Li-Ion Batteries: Investigation of Surface Coating and Mn Substitution in Terms of The Solid-State Properties Ahmet Örnek1, Mustafa Can2 1 Kafkas University, Atatürk Vocational School of Health Science, 36100, Kars, Turkey. 2 Sakarya University, Arifiye Vocational School, 54580, Sakarya, Turkey Nanostructured LiCo1-xMnxPO4/C (x = 0 to 0.2) materials were successfully produced as superior quality cathodes by the combined two methods, microwave / hydrothermal reduction method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive spectroscopy (EDS), fourier transform infrared spectroscopy (FT-IR) and galvanostatic measurements were applied to determine the phase purity, morphology and electrochemical qualifications. Analyses show that distribution of synchronous manganese doped and carbon coated particles were between 40 and 100 nm and the same material exhibits higher reversible capacity (145.3 mA h g-1) with the long voltage plateau (~ 4.8 V). Substitution of Co2+ with Mn2+ in LiCoPO4/C has an influence on the initial discharge capacity and solid-state efficiency. The obtained results attributed that a production dynamics in nano-synthesis, the surface modification with proper carbon source and effective doping represent three parameters to prepare favorable cathode materials. 165 (02_PP05) Investigation of Nio Thin Films Growth With Spray Pyrolysis System by Different Methods as a Function of Annealing Temperature A. Taşer, O. Özakın, B. Güzeldir and M. Sağlam Department of Physics, Faculty of Science, Atatürk University, Erzurum, Turkey ahmet.taser@atauni.edu.tr The purpose of this study was deposition of NiO thin films onto a glass (100 °C and 15 minute) and investigation of optical, structural and morphological properties of these structures depending on annealing temperature. NiO thin films were growth by fully automated spray pyrolysis equipment onto a glass substrate. The precursor solution was prepared by mixing 0.1 M of Nickel chloride (NiCl2) in 50 mL of ethanol absolute. The deposition parameters were 4 mL in 3 minutes solution flow rate, 90° position of spray nozzle towards the substrate. Atmospheric air was used as carrier gas with 1,5 mbar pressure. The properties of the NiO thin film were investigated with different methods as a function of the annealing temperature. 166 (02_PP06) Optimization of RF Magnetron Sputtered AZO Thin Films for Optoelectronic Applications A. Baltakesmez1,2, E. Gür1 and S. Tüzemen1 1 Atatürk University, Science Faculty, Physics Department, Erzurum, Turkey, emregur@atauni.edu.tr, stuzemen@atauni.edu.tr 2 Çankırı Karatekin University, Çankırı, Turkey, baltakesmez@atauni.edu.tr In this study, we presented the structural, electrical and optical properties of RF magnetron sputtered Al-doped ZnO (AZO) thin films on soda-lime glass substrate depending on RF power, substrate temperature and Ar gas pressure. In this experiment, we used Al2O3 doped ZnO (2wt%, %99.99) as sputtering target and pure argon gas (%99.999). The properties of the AZO films are investigated in terms of the deposition parameters by using X-ray diffractometer, four point probe and UV-visible spectrometer. It has been shown that all films obtained in the different deposition parameters have a preferred orientation in the (002) plane and average optical transmittance value of 85% with glass substrate in the visible region. Optimal deposition parameters were determined as the RF power of 120 W, the Ar gas pressure of 1.8 mTorr and the substrate temperature of 300 oC. For the parameters, the AZO thin films exhibited the lowest resistivity value of 4.2x10−4 Ω cm 167 (02_PP07) On the Forward Bias Anomalous Peak and Negative Capacitance (NC) in Al/ZnO/p-Si Structures at Room Temperature A. Aytimur1, Ş. Altındal2, İ. Orak3,4 and İ. Uslu5 1 Department of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, Turkey, ardaaytimur@hotmail.com 2 Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey, altundal@gazi.edu.tr 3 Department of Physics, Faculty of Science and Arts, Bingöl University, Bingöl, Turkey, ikramorak@gmail.com 4 Vocational School of Health Services, Bingöl University, Bingöl, Turkey, ikramorak@gmail.com 5 Department of Chemical Education, Faculty of Education, Gazi University, Ankara, Turkey, profibrahimuslu@gmail.com Frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements of the Al/ZnO/p-Si structures have been investigated in the wide frequency and voltage range of 5 kHz-5 MHz and (-4V)-(+4V), respectively. The high values of C and G at low frequencies are ascribed to the excess capacitance (Cex.) and conductance (Gex./w) resulting from the surface states (Nss) in equilibrium with the p-Si that could follow the alternating ac signal and polarization processes. The values of C crossing at almost a certain forward bias voltage point (~ 2.2 V) and then go negative which is known negative capacitance (NC) for each frequency. The value of NC, decreases with decreasing frequency at forward bias voltage and this decrease of the NC corresponds to an increase of the conductance. Such changes in C and G/w may be explained by considering the loss of surface charges at occupied states below Fermi level (EF) due to impact ionization processes. In addition, an anomalous peak has been observed in the forward bias capacitance especially at low frequency due to the existence of Nss and series resistance of the structure. It is thought that the capacitance value decreases with increasing polarization and more carriers are introduced in the structure. Keywords: Frequency dependent; Al/ZnO/p-Si structures; Anomalous peak in the accumulation region; Negative capacitance Acknowledgement. This work was supported by ARTEMIZ Research and Development (R&D) Company. ARTEMIZ is an establishment which is financially supported by Small and Medium Enterprises Development Organization (KOSGEB), Republic of Turkey. 168 (02_PP08) The Effect of (MoO3/ WO3) co-doping and Physical Characterization on Bulk BSCCO Superconductor Aslı Asiye Ağıl1, H. Gündoğmuş2, S. Karataş3 1 Materials Science and Engineering, Faculty of Engineering, Kahramanmaraş Sütçü İmam University 46100 Kahramanmaraş, Turkey, asliagil@gmail.com 2 Materials Science and Engineering, Faculty of Engineering, Hakkari University 30000 Hakkari, Turkey, hakangundogmus@hakkari.edu.tr 3 Department of Physics, Faculty of Sciences and Arts, Kahramanmaraş Sütçü İmam University 46100 Kahramanmaraş, Turkey In this study, we have investigated the effect of MoO3 and WO3 co-doping on (BiPb)2WxSr2Ca3Cu4-yMoyO12+& where x=0.1, y=0.0, 0.03, 0.06, 0.09 and 0.12. We have prepared our samples by using conventional solid state reaction method. The calcinations and sintering temperatures were obtained by using differential thermal analysis (DTA) technique. In order to investigate the effects of different MoO3 and WO3 substituted on the structure of BSCCO system; we have performed scanning electron microscopy, EDX and XRD measurement techniques. Keywords: Superconductivity, physical properties, solid state reaction, differential thermal analysis Acknowledgement This work is supported by the Research Fund of KahramanmaraĢ Sütçü Ġmam University, KahramanmaraĢ, Turkey, under grant contract no: 2014/4-12 YLS. 169 (02_PP09) Catalytic Effect of Platinum Surfaces to the Nabh4 Hydrolysis A. Akca1, B. Kutlu2 1 Gazi University, Department of Physics, Ankara, Turkey, aykanakca03@gmail.com 2 Gazi University, Department of Physics, Ankara, Turkey, bkutlu@gazi.edu.tr In recent years, researches on energy have been oriented to the renewable resources because of the air pollution and shortening reserves of the fossil fuels. Hydrogen energy is clean, renewable and quite remarkable in terms of its energy content between clean energy resources. Sodium Borohydride (NaBH4) is very rich about hydrogen content and very stable at room temperature. Transition metals in powder form is used as catalyst in hydrolysis reactions. In this study, the mechanism of hydrolysis of sodium borohydride was determined using catalyzed and uncatalyzed environments. The effect of the crystal surfaces of the powder form such as Pt(111), Pt(100), Pt(110) and Pt(210) to the activation barrier was determined using castep simulation package based on density functional theory. Relative energies were calculated for reactant, product and possible reaction intermediate. It is expected that clarifiying the reaction mechanism will be quite useful on producing more active catalysts and improving the current ones. 170 (02_PP10) The Investigation of Thermal Properties of NiMnCoIn Shape Memory Alloys A. Aydoğdu1, Y. Aydoğdu1, Z. D. Yakıncı2 and M. Kök3 1 Gazi University, Faculty of Science, Department of Physics, Ankara, Turkey 2 Inönü University, Vocational School of Health Service, Malatya, Turkey 3 Fırat University, Faculty of Science, Department of Physics, Elazığ, Turkey In this study, the thermal properties of NiMnCoIn shape memory alloys were investigated. NiMn40Co5In10, NiMn38Co5In12 and NiMn36Co5In14 (in atomic) alloys were prepared by using arc melter under vacuum. The melting procedure was applied five times to ensure homogenization. Then transformation temperature and transformation activation energy of all alloys were determined by using Differential Scanning Calorimetry measurement under an inert atmosphere of nitrogen. According to thermal measurement, transformation temperatures and activation energies of alloys are reduced by increasing amount of indium elements. Crystal structure of NiMnCoIn alloys was analyzed using X-ray diffractometer at the room temperature. All alloys showed same crystal structure at martensite phase according to XRD measurements. Thermal expansion measurements were performed using thermomechanical analysis (TMA) system. This work is supported by TUBITAK under Project No: 113F234 171 (02_PP11) Effect of Cr Addition on Martensitic Transformation in High Temperature CuAl based Shape Memory Alloys Z. D. Yakıncı1, A. Aydoğdu2, Y. Aydoğdu2, M. Kök3, M. Şene14, 1 İnönü University, Vocational School of Health Service, Malatya, Turkey Gazi University, Faculty of Science, Department of Physics, Ankara, Turkey 3 Fırat University, Faculty of Science, Department of Physics, Elazığ, Turkey 4 İnönü University, Graduate School of Natural and Applied Sciences, Malatya, Turkey 2 CuAl shape memory alloys (in atomic 76% Cu) exhibit eutectoid transformation at 565 oC. by addition of new element, the eutectoid transformation can be transform martensitic phase. At the same time, transformation temperature can be changed to intended temperatures. Aim of our study is to improve high temperature CuAl based shape memory alloys in accordance with this purpose, Chrome element was added with different percent into CuAl shape memory alloys. The effect of Cr addition on transformation temperature of CuAl shape memory alloy was investigated by differential scanning calorimetry (DSC). As a result of thermal measurement, the value transformation temperatures of CuAlCr alloys are above 300 oC. This work is supported by TUBITAK under Project No: 113F234 172 (02_PP12) The Effect of Annealing Temperature on Structural, Optical and Electrical Properties of MnS Thin Films Prepared By SILAR M. Ali Yıldırım1 and Aytunç Ateş2 1 Department of Electrical and Electronic Engineering, Erzincan University, Turkey, mayildirim@erzincan.edu.tr 2 Department of Material Engineering, Yıldırım Beyazıt University, Turkey, aates@ybu.edu.tr MnS thin films were prepared on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The annealing temperature effect on the structural, morphological, optical and electrical properties of the films was investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The crystalline and surface properties of the films were improved with increasing annealing temperature. The band gap values were changed from 3.19 to 3.05 eV depending on the annealing temperature. The refractive index (n), optical static and high frequency dielectric constants (εo, ε∞) values were calculated as a function of the annealing temperature. The resistivity values of the films were changed between 105–104 Ω-cm with annealing temperature at room temperature. Keywords: MnS; Annealing temperature; Refractive index; Dielectric constant; SILAR 173 (02_PP13) Electronic and Magnetic Properties of the Cubic Praseodymium Oxides Perovskites PrMnO3 Aziz Zoubir* , Bouadjemi Bouabdellah, Sefir Yamina, Djelti redouan, and Bentata Samir aziz_zdz@yahoo.fr Laboratoire de Technology and Properties of Solid, University of Abdelhamid Ibn Badis, BP 227, 27000 Mostaganem, Algeria We have investigated the electronic and magnetic properties of the cubic praseodymium oxides perovskites PrMnO3 were calculated using the density functional theory (DFT) with both generalized gradient approximation (GGA) and GGA+U approaches, where U is on-site Coulomb interaction correction. The results show a half-metallic ferromagnetic ground state for PrMnO3 in GGA+U approche, while semi-metallic ferromagnetic character is observed in GGA. The results obtained, make the cubic PrMnO3 a promising condidate for application in spintronics. Keywords : Electronic properties, Transition Metal, Magnetic moment, DFT, half- metallic. [1] A.S. Verma and A. Kumar. Journal of Alloys and Compounds 541 (2012) 210–214 [2] K. Chahara, T. Ohno, M. Kasai, Y. Kozono, Appl. Phys. Lett. 63 (1993) 1990. [3] A. Urushibara, Y. Moritomo, T. Arima, A. Asamisu, G. Kido, Y. Tokura, Phys. Rev. B 51 (1995) 14103. [4] J. Wolfman, C.H. Simon, M. Hervieu, A. Maignan, B. Raveau, J.Solid State Chem. 123 (1996) 413. [5] J. Cheng, Z.Q. Yang, Phys. Status. solidi B 243 (6) (2006) 1151. 174 (02_PP14) Analysis of the Characteristics Parameters for FeCrNiC/n-GaAs Structure by CurrentVoltage-Temperature (I-V-T) Measurements Bahattin ABAY Department of Physics, Faculty of Science, Atatürk University, TR-25240, Erzurum, Turkey, babay@atauni.edu.tr Current-Voltage-Temperature (I-V-T) characteristics of Schottky structure with a quadripartite alloy FeCrNiC on n-GaAs have been investigated at a temperature range from 24 K to 400 K, for the first time. The main characteristic diode parameters suc as apperent ideality factor ( ap. n ) and apparent barrier height (BH) have remained almost unaltered, between 1.06-1.13 and at a value of about 0.810 eV, respectively, at the temperatures above 200 K. Hence, it can hardly be supposed that FeCrNiC alloy contacts on n-GaAs have shown excellent diode behaviour due to the ideality factor values near the unity and almost independent of the sample temperature above 200 K. An abnormal decrease in the φap. and an increase in the ap. n with a decrease in temperature have been observed below 200 K. This behaviour has been explained on the basis of the thermionic emission (TE) theory by incorporating the concept of inhomogeneous multiple barriers with nanometer-sized patches with low BH at the metal-semiconductor (MS) interface. The BH inhomogeneity assumption has also been interpreted by linear behaviour of the φap. vs. ap. n plot. A modified Richardson plot, from Tung’s approach, yields a satisfactorily value for the Richardson constant; considering the effective patch area which is significantly lower than the entire geometric Schottky contact area, at the temperatures below 200 K. Thus, our results confirm that the use of Tung’s lateral inhomogeneity approach is more appropriate to construe the I-V-T characteristics of MS structures with inhomogeneous interface. 175 (02_PP15) Investigation of Physical Properties of LuRhO3 Structure Bahattin Erdinc1, Mesut Kaval2 1 Yüzüncü Yıl University,Van, Turkey bahattinerdinc@yyu.edu.tr 2 Yüzüncü Yıl University,Van, Turkey kavalmesut@gmail.com In the present work, structural optimization, electronic energy band structure and total density of states of LuRhO3 were examined using density functional theory within the local density and generalized gradient approximations. This work was performed by ABINIT software package program. The obtained energy band structure and calculated density of states of valance electrons for LuRhO3 compound shows that the electronic structure of crystal has a semiconductor state. Besides, optical properties of this crystal were investigated within the generalized gradient approximation. In the literature search, we obtained a few experimental studies related with this compound and no theoretical information is available. So, we could not compare our results with neither previous theoretical nor experimental studies. 176 (02_PP16) Physical Properties of Paraelectric AgNbO3 Crystal Under Pressure Using Density Functional Theory Bahattin Erdinc1, Mesut Kaval2 1 Yüzüncü Yıl University, Van, Turkey bahattinerdinc@yyu.edu.tr 2 Yüzüncü Yıl University,Van, Turkey kavalmesut@gmail.com In this work, by using the density functional theory (DFT) and ab-initio pseudopotential method within the local density approximation, the electronic band structure and optical properties of paraelectric AgNbO3 crystal are investigated under pressure. It has been shown that paraelectric AgNbO3 crystal has an indirect band gap and the total density of states of paraelectric AgNbO3 crystal has been calculated. Moreover, the real and complex parts of the linear photon energy dependent dielectric functions and some optical constants such as the extinction coefficient, absorption coefficient, energy-loss function, reflectivity, refractive index, optical conductivity, effective number of valence electrons and effective optical dielectric constant are studied under pressure. 177 (02_PP17) Electronic and Optical Properties of the Paraelectric AgTaO3 Compound Under Pressure by Dft Method Bahattin Erdinc1, Melike Dede2 1 Yüzüncü Yıl University,Van, Turkey bahattinerdinc@yyu.edu.tr Yüzüncü Yıl University,Van, Turkey melikedede65@gmail.com 2 The electronic band structure and optical properties of paraelectric AgTaO3 crystal under pressure are investigated using density functional theory based on local density approximation by ABINIT package program. The lattice constant optimization of AgTaO3 crystal has been performed. The obtained lattice parameters have been compared with the experimental values. The calculated band structure under pressure shows that the paraelectric AgTaO3 crystal has indirect band gap in the first Brillouin zone. Furthermore, the optical properties of paraelectric AgTaO3 crystal under pressure are calculated in the photon energy range of 0-40 eV. 178 (02_PP18) Statistical Investigation of Characteristic Parameters for FeCrNiC/p-Si Junctions Bahattin Abay Department of Physics, Faculty of Science, Atatürk University, TR-25240, Erzurum, Turkey, babay@atauni.edu.tr FeCrNiC/p-Si junctions on p-Si substrate were fabricated by conventional vacuum deposition. Characteristic parameters such as barrier height (BH), ideality factor (n) and serial resistance (Rs) of identically fabricated (35 dots) FeCrNiC/p-Si junctions have been computed by thermionic emission (TE) theory from the forward-bias current-voltage (I-V) data, at room temperature and in dark. A statistical study on the junction parameters has been made by using Tung’s model. The BHs obtained from the I-V characteristics varied from 0.552 to 0.631 eV. The values of n varied from 1.007 to 1.611 and the serial resistances Rs varied from 108 to 137 Ω. The results showed that all parameters of FeCrNiC/p-Si junctions differ from one device to another even though they were identically prepared. The experimental BH, ideality factor and serial resistance distributions are fitted by a Gaussian function, and their mean values were found to be 0.579 eV, 1.286 and 117 Ω, respectively. Also, lateral homogeneous BH ( hom. ) value of 0.588 eV for the FeCrNiC/p-Si junctions has been obtained from the eff. - n plot by using Tung’s lateral inhomogeneity approach. The good agreement of these parameters indicates that the BH inhomogeneity of FeCrNiC/p-Si junction can be well delineated by spatial distributions of BH, i.e., electron transport at the MS interface is significantly affected by nanoscale spatial variations. 179 (02_PP19) Star-shaped Polyhedral Oligomeric Silsesquioxane Core (POSS) Based Organic FieldEffect Transistor B. Canimkurbey,1,2, E. Doganci3, A. Uner4,A. Kosemen1, S. E. San1, F. Yılmaz4 1 Gebze Technical University, Physics Department, Kocaeli, Turkey, bcanimkurbey@gtu.edu.tr 2 Amasya University, Department of Physics, Amasya, Turkey, bcanimkurbey@gtu.edu.tr 3 Kocaeli University, Kocaeli Voc. Sch., Department of Chemistry and Chemical Processing Tech., Kocaeli,Turkey 4 Gebze Technical University, Chemistry Department, Kocaeli, Turkey Recently, organic field-effect transistors (OFETs) have attracted a great deal of attention owing to their potential candidates for use in a wide range of electronic applications, such as displays, sensors, and electronic barcodes. Polyhedral oligomeric silsesquioxane (POSS) is a class of important and interesting inorganic components and can be modified with polymers to produce lots of novel hybrid polymers with advantageous benefits. POSS containing copolymers have gained great deal of attention for their attractive and various application fields in electronics, in optics and in sensor applications due to their highly adsorbing and catalyzing benefits. The novel enhanced properties of POSS are related to its inorganic/organic hybrid structure. In this work, octafunctional homoarm star-shaped polystyrene (PS) and poly(methyl methacrylate) (PMMA) polymers with polyhedral oligomeric silsesquioxane (POSS) core were prepared as the insulators for organic thin film transistors (OTFTs) using P3HT as an active p-type organic semiconductor. The POSS cored star-shaped polymer layers used in transistor assemblies and they have demonstrated promsining transistor characteristics 180 (02_PP20) Effects of Ageing on the Electrical Characteristics of Zn/ZnS/n-GaAs/In Structure B.Güzeldir and M. Sağlam Department of Physics, Science Faculty, Atatürk University, Erzurum, TURKEY bguzeldir@atauni.edu.tr Zn/ZnS/n-GaAs/In structure has been fabricated by the Successive Ionic Layer Adsorption and Reaction (SILAR) method and the influence of the time dependent or ageing on the characteristic parameters are examined. The current-voltage (I-V) of the structure have been measured immediately, 1, 3, 5, 15, 30, 45, 60, 75, 90, 105, 120, 135, 150 and 165 days after fabrication of this structure. The characteristics parameters of this structure such as barrier height, ideality factor, series resistance are calculated from the I-V measurements. It has been seen that the changes of characteristic parameters such as barrier height, ideality factor and series resistance of Zn/ZnS/n-GaAs/In structure have lightly changed with increasing ageing time. 181 (02_PP21) Analysing of Electrical Characteristics of Schottky Diodes Produced by Au-Cu and AuAg Alloys From n-GaAs Semiconductor Prepared at Different Ratios Depending on Temperature Dependent S. Küp, İ. Kanmaz, A. Taşer, B. Güzeldir and M. Sağlam Department of Physics, Science Faculty, Atatürk University, Erzurum, TURKEY bguzeldir@atauni.edu.tr The Au-Cu/n-GaAs/In and Au-Ag/n-GaAs/In Schottky structures were obtained by evaporating of Au-Cu and Au-Ag alloys prepared at laboratory with different ratios. We have reported a study of the I–V characteristics of the Au-Cu/n-GaAs/In and Au-Ag/n-GaAs/In Schottky structures in a wide temperature range of 100–320 K by a step of 20 K The main electrical parameters, such as ideality factors, barier heights, series resistance values and straightening rates have been calculated with increasing temperature by termionic emission and Norde methods. 182 (02_PP22) Characterization of TiO2-Decorated Bentonite Clay C. Topcu1, B. Çağlar1, B. Bozkurt Çırak2, Ç. Çırak3, E. Kavaklı3, K. Gedik1 and S. Çağlar1 1 Erzincan University, Faculty of Arts and Sciences, Department of Chemistry, Turkey, ctopcu@erzincan.edu.tr, bcaglar@erzincan.edu.tr, scaglar@ erzincan.edu.tr, kubra_gedik_24@hotmail.com 2 Erzincan University, Vocational School, Department of Alternative Energy Sources, Turkey bbcirak@erzincan.edu.tr, kavakli76@hotmail.com 3 Erzincan University, Faculty of Arts and Sciences, Department of Physics, Turkey ccirak@erzincan.edu.tr Nanostructured TiO2/clay materials have been widely used in many applications in a variety of fields such as photocatalysis, plastic degradation, electric materials, membranes, modified electrodes, antibacterial agent development and water purification. The synthesis of novel material and understanding their structural properties is essential for their industrial applications. The present investigation was undertaken to obtain information about the structural, thermal, and morphological properties of the synthesized TiO2/bentonite materials at various TiO2 concentrations by means of powder X-ray diffraction, attenuated total reflection Fourier transform infrared, scanning electron microscopy and thermal analyses techniques. The characterization results showed that all the TiO2/bentonite materials contain both anatase and rutile crystal phases of TiO2 in surface of clay. The average size of TiO2 particles was decreased from 1.0-1.2 μm to 50–160 nm with the increase in TiO2 amount on the clay surface. The calcination of clay and TiO2 particles present on the clay layers caused a significant decrease in the intensity of the surface hydroxyl band at 3618 cm -1 and new peak at 668 cm-1 belonging to the TiO2 species were appeared. The results obtained in this study may especially provide further insight into photocatalysis studies and development of novel TiO2/clay hybrid nanomaterials. 183 (02_PP23) Structural, Thermal and Morphological Properties of Magnetic Fe3O4/Smectite Nanoparticles B. Çağlar1, C. Topcu1, S.Çağlar1, K. Gedik1, B. Bozkurt Çırak2, E. Kavaklı3 and Ç.Çırak3 1 Erzincan University, Faculty of Arts and Sciences, Department of Chemistry, Turkey, ctopcu@erzincan.edu.tr, bcaglar@erzincan.edu.tr, scaglar@ erzincan.edu.tr, kubra_gedik_24@hotmail.com 2 Erzincan University, Vocational School, Department of Alternative Energy Sources, Turkey bbcirak@erzincan.edu.tr, kavakli76@hotmail.com 3 Erzincan University, Faculty of Arts and Sciences, Department of Physics, Turkey ccirak@erzincan.edu.tr Magnetic nanoparticles like nano-Fe3O4 have continued to draw considerable attention because of their excellent potential applications in magnetic fluids, catalysis, biotechnology/biomedicine, magnetic resonance imaging and magnetic recording devices in view of its paramagnetism, biocompatibility and safety. The synthesis of novel nanoparticles means the exploration of new application areas, and therefore considerable efforts have been spent to prepare magnetic nanoparticles. In the present study, we have synthesized a magnetic Fe3O4/smectite nanoparticles. The structural, morphological and thermal properties of nanocomposites were investigated by using powder X-ray diffraction, attenuated total reflection Fourier transform infrared, thermogravimetry-derivative thermogravimetry and differential thermal analyses, differential scanning calorimetry and scanning electron microscopy. The characteristic stretching vibrations of Fe-O bonds of Fe3O4 are observed around 600 cm-1. XRD and SEM analysis data showed that Fe3O4/smectite have magnetite phase structure of the Fe3O4 on the clay surfaces. The synthesized magnetic nanoparticles have potential applications in developments of sorbents for removal of metal and organic contaminants from environment, in preparation of polymer nanocomposites, in forthcoming catalysis studies. 184 (02_PP24) Investigation Structural and Optical Properties of Ni and Zn Doped CdO Nanostructures Synthesized by Chemical Bath Deposition Technique S. Morkoç Karadeniz1, T. Kılınç1, B. Bozkurt Çırak2, T. Gönen1, M. Acur1, Ç. Çırak1, M. Ertuğrul3 and A. E. Ekinci1 1 Erzincan University, Department of Physics, Erzincan, Turkey, morkocsibel@gmail.com, tkilinc@erzincan.edu.tr, ccirak@erzincan.edu.tr, aeekinci@erzincan.edu.tr 2 Erzincan University, Vocational School, Department of Alternative Energy Sources, Turkey, bbcirak@erzincan.edu.tr 3 Atatürk University, Department of Electrical and Electronic Engineering, Erzurum, Turkey In this study, Ni and Zn doped CdO nanostructures were synthesized by Chemical Bath Deposition Technique. CdCl2 solution was used as a precursor solution. For obtained clear solution, ammonia (26%) was added in the solution. Also, Ni and Zn included precursors were added in this solution at the same molarity. The glass substrates were immersed in the result solution and they were removed after three and five days. The samples were annealed at 400 °C for 2h. It was investigated Ni and Zn doping effect on CdO nanostructures. X-Ray diffraction spectroscopy, Scanning Electron Microscopy and Ultraviolet Visible Spectroscopy were used for structural and optical characterization of Ni and Zn doped CdO nanostructures. Acknowledgements : The support of Scientific Research Projects of Erzincan University for Project No. FEN-A-020215-0117 185 (02_PP25) Synthesis and Characterization of TiO2 nanotubes by Anodic Oxidation B. Bozkurt Çırak1, S. Morkoç Karadeniz2, T. Kılınç2, Ç. Çırak2, M. Yılmaz3, A. E. Ekinci2 2 Erzincan University, Vocational School, Department of Alternative Energy Sources, Erzincan, Turkey bbcirak@erzincan.edu.tr 3 Erzincan University, Department of Physics, Erzincan, Turkey smorkoc@erzincan.edu.tr, tkilinc@erzincan.edu.tr, ccirak@erzincan.edu.tr, aeekinci@erzincan.edu.tr 3 Atatürk University, Department of Elementary Science, Erzurum, Turkey, mehmetyilmaz@atauni.edu.tr TiO2 nanotubes have been extensively studied for their application in dye-sensitize Solar cells and photocatalyst due to chemical durability and suitable band gap energy. The growth of nanotubular titania by anodization, a relatively simple and low cost technique. To growth TiO2 nanotube arrays, anodization of Ti metal-sheet (0.25 mm, Sigma Aldrich) was carried out at 30V voltage with platinum counter electrode in ethylene glycol, NH4F and water solution. In the experiment, anodization was carried out at the voltage for 3 hours. After anodization, as prepared amorphous TiO2 nanotubes calcinated at air. The calcinated anatase TiO2 nanotube arrays characterized by HT-XRD and SEM techniques. 186 (02_PP26) Mechanical and Microstructural Properties of Eutectic Pb-Sn-Zn Alloy A. B. Vural, E. C. Akkan, F. Yavuzer, F. T. Özer, O. Çağlar and F. Meydaneri Tezel1 Karabük University, Faculty of Engineering, Department of Metallurgy and Materials Engineering, Karabük, Turkey, canakkan17@hotmail.com Eutectic Pb-Sn-Zn alloy in previously determined composition was casted in the wet grit model. Surface pollutions of samples which were obtained after casting processes were cleaned, and heat treatment was applied for 15 mins. at approximately 70 °C, and it was left for cooling in the furnace. After metallographic processes, mechanical properties were monitored by hardness testing, which is one of the easiest ways to determine the mechanical properties of the different phases of the structure. The value of micro hardness for eutectic PbSn-Zn (65.5 %wt. Sn-31.1 % wt. Pb-3.4 % wt. Zn) ternary alloy was done at room temperature by using hardness tester device (HMV-2 Micro Hardness Tester Shimadzu), and average micro hardness value was determined to be 19.4 kg/mm2. After preparing the samples which will used for the tension test, according to TS EN ISO 6892-2:2011 standard at the room temperature (25 °C), tension test was performed with 0.0067 l/s velocity. According to this test, yield strength, tensile strength, breaking strength, % elongation of yield, % elongation of strength, % elongation of total, modulus of elasticity, toughness and resilience values were found to be 55 MPa, 65 MPa, 13 MPa, % 0.34, % 2.94, % 7.3, 16.176 GPa, 2 Nm/m3 and 0.0935 Nm/m3, respectively. The microstructure and composition analysis of the same material was investigated by using Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray with Mapping (EDX). Moreover, surfaces of broken samples in results of the tension test are investigated by SEM, information related to ductility and fragile of the sample is obtained. 187 (02_PP27) Growth and Characterization of Copper Tin Sulfide Semiconducting Thin Films by SILAR Method C. Çetin1 and A. Astam2 1 Divriği Nuri Demirağ Vocational School, Cumhuriyet University, Sivas, Turkey, cemalcetin@cumhuriyer.edu.tr 2 Department of Physics, Science and Art Faculty, Erzincan University, Erzincan, Turkey, aastam@erzincan.edu.tr Polycrystalline copper tin sulfide thin films were obtained on glass substrates by annealing of successive ionic layer adsorption and reaction (SILAR) deposited thin films at 300°C for an hour in nitrogen atmosphere. Structural, compositional and optical properties films were investigated before and after annealing by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption studies. X-ray diffraction measurements indicated a significant improvement in crystallinity upon annealing. Scanning electron microscopy images showed that, substrate surfaces were well covered with some cracks before and after annealing. Presence of uniformly sized clusters distributed over the surface was also seen from these images. The results of energy dispersive X-ray analysis revealed that, annealing the films led to a decrease in sulfur content. From the optical absorption measurements, band gap energy of the films was found to decrease with annealing. 188 (02_PP28) Frequency and Voltage Dependence of Dielectric, ac Electrical conductivity and Electric Modulus Profiles in Al/Co3O4-PVA/p-Si Structures in the Wide Frequency Range Çiğdem Bilkan1, 2, İkram Orak3, Şemsettin Altındal1 1 Department of Physics, Faculty Sciences, Gazi University, 06500, Ankara, Turkey, Department of Physics, Faculty Sciences, Karatekin University, 18000, Çankırı, Turkey, 3 Department of Physics, Faculty of Science and Arts, Bingöl University, Bingöl, Turkey 2 Frequency and voltage dependence of both the real and imaginary parts of dielectric constants (ε', ε'') and electric modulus (M' and M''), loss tangent (tanδ), and ac electrical conductivity ( ac) values of Al/Co3O4-PVA/p-Si structures were obtained in the wide range of frequency values of ε', ε'' and tanδ were found to decrease with increasing frequency almost for each applied bias voltage, but the changes in these parameters become more effective in the depletion region at low frequencies due to the charges at surface states and their relaxation increases almost as exponentially at high frequency which are dc ac, respectively. The M' and M'' have low values at low frequencies region and then an increase with frequency due to short-range mobility of charge carriers. While the value of M' increase with increasing frequency, the value of M'' shows two peak and the peaks positions shifts to higher frequency with increasing applied voltage due to the decrease of the polarization and Nss effects with increasing frequency. 189 (02_PP29) Electrical Characteristics of Au/n-4H-SiC (MS) and Au/Si3N4/ n-4H-SiC (MIS) Type Schottky Barrier Diodes (SBDs): A Comparative Study F. Yiğiterol1, D. E. Yıldız1 1 Physics Department, Faculty of Arts and Sciences, Hitit University, Çorum, Turkey In this study, Au/n-type 4H-SiC Schottky barrier diodes (SBDs) with and without interfacial insulator layer (Si3N4) were fabricated to explain whether or not this layer is effective on main electrical parameters such as zero-bias barrier height (ΦBo), ideality factor (n), interface states (Nss), series resistance (Rs), diffusion potential (Vd) and deplation layer width (WD). The experimental forward and reverse bias current-voltage (I-V), capacitance–voltage (C-V) and conductance-voltage (G/w)-V characteristics of these devices were carried out in the wide voltage range at room temperature. The values of n and ΦBo were found from the forward bias I-V data as 1.305 and 0.796 eV for Au/n-type 4H-SiC (D1), and 3.142 and 0.713eV for Au/Si3N4/n-type 4H-SiC (D2), respectively. It is clear that the obtained value of n is greater than unity especially for diode with Si3N4 layer. Therefore, such behavior of n especially can be attributed to the interfacial layer, Nss, and the formation of barrier height inhomogeneity which is contain many patches around mean barrier height at metal/semiconductor (M/S) interface. The values of n and ΦB were also determined as function of applied bias voltage (V) and their values increase with increasing V for two diodes. In addition, the energy density distribution profile of Nss was obtained from the forward bias I-V data by taking into account the bias dependence of the effective barrier height (Φe) and n(V) with and without Rs. The Nss values with Rs are almost one order of magnitude lower than those without Rs for two devices. C-V measurements show that the values of C for D1 goes to negative value at about 2.5 V. This decrease in negative capacitance (NC) corresponds to the the other hand, the values of C do not have a negative behavior in the forward bias region for D2. In addition, the value of leakage current at (-1 V) for D2 is almost one order lower than D1 diode. These results show that the high dielectric interfacial layer (Si3N4) is considerably improve the diode performance. Keywords: Si3N4; Series resistance; Interface states; Negative capacitance 190 (02_PP30) A Review on Reverse Conduction Mechanisms in TiO2 Dielectric Film D. E. Yıldız1 1 Physics Department, Faculty of Arts and Sciences, Hitit University, Çorum, TURKEY Electrical analysis of Al/p-Si Schottky diode with TiO2 thin film was performed at room temperature. The reverse bias current-voltage (IR-V) characteristics of diode were investigated and t reverse-bias leakage current mechanism of Al/TiO2/p-Si Schottky barrier diodes was discussed. The IR-V curves in the reverse direction are taken and interpreted via both Schottky and Poole-Frenkel effects. The theoretical values of 𝛽 coefficients for Al/TiO2/p-Si Schottky diodes are βPF=1.0x10-4eV/m1/2V-1/2 and βS=5.48x10-5eV/m1/2V-1/2. The experimental value of β obtained from slope of linear region in In (IR) vs. E1/2 is 4.61x10-5 eV/m1/2V-1/2 for 300K. In addition, the experimental value of βS obtained from slope of linear region in In(JR/A*T2) vs. V1/2 is 3.26x10-5 eV/m1/2V-1/2 for diode. A good agreement between the theoretical values of βS and the experimentally value of β was established. It is suggested that Schottky effect is more dominated in reverse direction as is more close to theoretical Schottky coefficient. Keywords: TiO2; Schottky and Poole-Frenkel effects 191 (02_PP31) Analysis of Thickness-Dependent Forward-Bias Conduction Mechanisms in Organic Diodes D. E. Yıldız1,*, L. Toppare2,3.4.5, A.Cirpan2,3.5.6 1 Physics Department, Faculty of Arts and Sciences, Hitit University, 19030 Corum, Turkey Department of Polymer Science and Technology, Middle East Technical University, 06800 Ankara, Turkey 3 Department of Chemistry, Middle East Technical University, 06800 Ankara, Turkey 4 Department of Biotechnology, Middle East Technical University, 06800 Ankara, Turkey 5 The Center for Solar Energy Research and Applications (GUNAM), Middle East Technical University, 06800 Ankara, Turkey 6 Micro and Nanotechnology Program, Middle East Technical University, 06800 Ankara, Turkey 2 In this work, the forward-bias conduction mechanisms were analyzed for ITO/PEDOT: PSS/Polymer:PC61BM/LiF/Al configuration organic diodes in the thickness range between 90 and 200 nm. In this thickness range, the forward I-V plots were investigated by evaluating electrical properties, s Bo) , ideality factor (n) and carrier mobility (µ). The experimental values of Bo increases with increasing thickness and the experimental values of n is high than an ideal state (n=1) for each thickness. The n>1 can be also attributed to the existence of an insulating layer. In addition, thickness effect of the carrier mobility was measured using SCLC model in all diodes. Our results suggest that the thickness of the PFTBT:PC61BM layer significantly affects the electrical properties, namely the space charge region of the ITO/PEDOT:PSS/Polymer:PC61BM/LiF/Al. Keywords: organic diodes, conduction mechanisms 192 (02_PP32) Investigation of The Electrical Characteristics of Al/P-Si/Al Schottky Diode Elvan Şenarslan, Betül Güzeldir and Mustafa Sağlam Department of Physics, Faculty of Science, Atatürk University, 25240, Erzurum, Turkey In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 110 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N2. Then respectively RCA1(i.e., boiling in NH3+H2O2+6H2O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H2O2+6H2O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N2. After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the pSi wafer pieces under ~ 4.2x10-6 Torr pressure. After process evaporation, Al/p-Si contact was annealed at 580 °C for 3 min in a quartz tube furnace in N2. Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ~ 1x10-6 Torr. Consequently, Al/ p-Si /Al Shottky diode was obtained. The I–V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C–V measurements were performed with HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark. 193 (02_PP33) C-V-f Characteristics and Interface State Density Distribution of (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes Enise Ayyıldız1 and Abdullah Akkaya2 1 Erciyes University, Science Faculty, Physics Dept., Talas Yolu 38039 Kayseri/TURKEY, enise@erciyes.edu.tr 2 Ahi Evran University, Mucur Technical Vocational Schools, Tech. Prog. Dept., 40500 Mucur/Kırşehir/TURKEY, abdullah.akkaya@ahievran.edu.tr The effect of thermal annealing on the interface state density of (Ni/Au)/Al0.09Ga0.91N Schottky contacts was investigated by capacitance-frequency (C-f) measurements. The metallization patterns on AlGaN grown by metal organic chemical vapor deposition on a HPSI-SiC substrate were formed using the photolithography and lift-off techniques.When the conductance method (CM) applied to C-f measurement results, the interface state density was 2.689x1012 eVcm-2 and 2.753x1012 eVcm-2 at 0 V and 3 V respectively. Furthermore, time constants of carriers (τ) were3.15x10-6 s and 3.53x10-5 s at the same bias range. In order to study the thermal annealing effects on electrical properties of the (Ni/Au)/Al0.09Ga0.91N Schottky contacts, samples were annealed in a quartz tube furnace for 2 min. in flowing argon ambient from 100 to 700°C with step of 100°C. Optimum conditions were obtained at after the 600°C annealing. In that case the Dit was 2.551x1012 eVcm-2 and 1.010x1011 eVcm-2 at 0 V and 3 V respectively. Also, τ were found to be 6.29x10-6 s and 1.49x10-4 s at the same bias range. The obtained interface state density values is low for a naturally highly defected substrates. In fact, annealing causes a metal diffusion in to the substrate and interface chemistry rearranges and of course charge density distribution at interface. Keywords: AlGaN, Schottky diode, C-f, conductance method,thermal annealing. 194 (02_PP34) Design of Tio2 / Zno Nano-Hybrid Buildings, Structural or Optical Characterization in the Production of New Generatıon Photovoltaic Cell (Dssc) Bayram Kılıç1, Ezgi Canbek2, İpek Ülfet3 1 Yalova University, Yalova, Turkey, Kbayramkilic@Gmail.Com Yalova University, Yalova, Turkey, Ezgicanbek@Gmail.Com 3 Yalova University, Yalova, Turkey, İpekulfet@Gmail.Com 2 Solar cell technology is very important to renewable energy sources. For this reason the search for new designs and increasing the efficiency of solar cells technology efforts are still ongoing. production in recent years have been investigated intensively because of high cost of the conventional solar cells, low productivity and diffuculty in the production. In this research project, the FTO (F: SnO2) on the floor hydrothermal method is used to obtain nanostructured hybrid nanostructure by amplifying TiO2 nanoporous materials (nano-pores) into a onedimensional (1D) nanowire ZnO. The resulting hybrid nano-structures Ruthenium based on organic dye (N719) absorbed by the dye sensitized photovoltaic cell (DSSC) has been performed.As a 1D orthoganal arrays ZnO nanowires are exaggerated on the base material and big surface area was obtained. Cell yield showed an increase as a result. After all of structural and optical characterisations (SEM, XRD, EDAX, FTIR, XPS), hybrid nano construction`s high crystallization quality was observed , nano-porous Radius was measured as 30 nm and size of nanowires were found as 1-10 picometer.These values were obtained as the following.Current density – voltage (J-V) characterisation`s open circuit voltage (Voc) = 0.77 V.Short circuit current (Isc) = 0.27 A.Filling Factor (FF)= 0.77.High efficiency. 195 (02_PP35) Effects of High Boron Doping on CdS Thin Films Prepared by Chemical Bath Deposition Method F. Bozali1, M. Tomakin1, V. D. Nevruzoğlu2, Z. Onuk1 and E. F. Keskenler3 1 Department of Physics, Recep Tayyip Erdoğan University, Rize, Turkey, murat.tomakin@erdogan.edu.tr 2 Department of Energy Systems Engineering, Recep Tayyip Erdoğan University, Rize, Turkey, vagif.nevruzoglu@erdogan.edu.tr 3 Department of Material Science and Nanotechnology Engineering, Recep Tayyip Erdoğan University, Rize, Turkey, eyupfahri.keskenler@erdogan.edu.tr Boron doped CdS thin films were grown on glass substrate by chemical bath deposition method. H3BO3 was used as B dopant source. Dopant concentration was determined with H3BO3/CdAc molar ratio (0.005, 0.01, 0.05, 0.1, 0.2 and 0.5). X-ray diffraction studies showed that the textures of CdS thin films had cubic with (111) preferred direction and some amorphous components. a lattice parameters decreased from 5.807 Å to 5.769 Å for 0.01 doping ratio. After 0.05 ratio, a lattice parameters increased to 5.787 Å and then for higher doping ratio, lattice parameters remained approximately constant. The surface of the CdS samples had some voids and the voids density incereased with B doping. However, for 0.5 doping ratio voids density decreased and surface was more closed packet structure. The all samples are Cd-rich because of Cd/S ratio was larger than 1. Band gap of the samples increased from 2.43 eV to 2.48 eV with B doping. The samples had two broad emission peaks: (i) between 330 and 530 nm and (ii) between 530 and 730 nm. It was determined from electrical measurement that high boron doping (>0.05) increased significantly photosensitivity. Lower resistivity value obtained for 0.005 molar ratio as 2.76102 -cm 196 (02_PP36) Investigation of Some Physical Properties of Boron Doped CdS Thin Films Irradiated with Cs-137 F. Bozali1, M.Tomakin1, E.F. Keskenler2, T. Bayazıt1 and V.D. Nevruzoğlu3 1 Department of Physics, Recep Tayyip Erdogan University, Rize, Turkey, murat.tomakin@erdogan.edu.tr 2 Department of Material Science and Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize, Turkey, eyupfahri.keskenler@erdogan.edu.tr 3 Department of Energy Systems Engineering, Recep Tayyip Erdogan University, Rize, Turkey, vagif.nevruzoglu@erdogan.edu.tr Cs-137 radioactive isotope was used for irradiation of boron doped CdS thin films prepared on glass substrate by chemical bath deposition method. Dopant concentration was H3BO3/CdAc molar ratio (= 0.005, 0.01, 0.05, 0.1, 0.2 and 0.5). X-ray diffraction (XRD) studies showed that the textures of CdS thin films had cubic with (111) preferred direction. Irradiation with Cs-137 deteriorated XRD pattern of all sample such as intensity count in XRD increased but full-width-half maximum of peak increased significantly too. a lattice parameter was not calculated exactly for irradiated samples. The surface of the all CdS samples was flattened and voids density decreased after irradiation. However, for 0.5 doping ratio voids occured with irradiation. Irradiation decreased band gap of all samples. The samples had two broad emission peaks: (i) between 330 and 530 nm and (ii) between 530 and 730 nm. After irradiation first region intensity reduced significantly and second region intensity increased especially around 530 nm for un-doped and lower B doped (0.005, 0.01, 0.05) CdS samples. Photoluminescence spectra of high B doped (0.1, 0.2 and 0.5) CdS samples were not changed significantly. It was determined from electrical measurement photosensitivity of all sample deteriorated after irradiation. 197 (02_PP37) Structural and Optical Properties of ZnO Thin Films Prepared on Different Substrates by Ultrasonic Spray Pyrolysis Method E. Bingöl1, M.Tomakin1, E.F. Keskenler2, F. Bozali1 and V.D. Nevruzoğlu3 1 Department of Physics, Recep Tayyip Erdogan University, Rize, Turkey, murat.tomakin@erdogan.edu.tr 2 Department of Material Science and Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize, Turkey, eyupfahri.keskenler@erdogan.edu.tr 3 Department of Energy Systems Engineering, Recep Tayyip Erdogan University, Rize, Turkey, vagif.nevruzoglu@erdogan.edu.tr In this study, ZnO thin films were grown on glass, n-Si (100), p-Si (111), c axis textured graphite and indium tin oxide coated glass (ITO) substrates by ultrasonic spray pyrolysis method. During the growth, the substrates were rotated with a speed of 3.5 rpm at a temperature of 400 °C and in atmospheric pressure. X-ray diffraction studies showed that ZnO samples have hexagonal structure with a strong (002) preferred direction. The preferred orientation of sample prepared on ITO substrate changed from (002) to (101). X-ray diffraction intensity decreased for samples prepared on ITO and graphite substrates. Lattice parameters of all samples generally were larger than that of bulk CdS (a = 3.25 Å ve c = 5.20 Å). Samples prepared on glass and ITO grew as quasi-aligned hexagonal shaped microrods with diameters varying between 0.3 and 0.8 m. The all samples are Zn-rich because of Zn/O ratio is larger than 1. Photoluminescence measurements indicated a sharp ultraviolet luminescence at ~380 nm. The other photoluminescence peaks were located at 420, 440, 480, 525, 625 and 756 nm, which are related defects. Band gap values of samples were found between 3.26 – 3.28 eV. 198 (02_PP38) Influence of Precursor Solution on Structural and Optical Properties of ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis Method E. Bingöl1, M.Tomakin1, V.D. Nevruzoğlu2 F. Bozali1 and E.F. Keskenler3 1 Department of Physics, Recep Tayyip Erdogan University, Rize, Turkey, murat.tomakin@erdogan.edu.tr 2 Department of Energy Systems Engineering, Recep Tayyip Erdogan University, Rize, Turkey, vagif.nevruzoglu@erdogan.edu.tr 3 Department of Material Science and Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize, Turkey, eyupfahri.keskenler@erdogan.edu.tr ZnO thin films were prepared using zinc chloride (ZnCl2), zinc acetate (Zn(CH3COO)22H2O) and zinc nitrate (Zn(NO3)26H2O) precursors by ultrasonic spray pyrolysis method on glass substrates at 400 °C and with a speed of 3.5 rpm. X-ray diffraction studies showed that ZnO samples have hexagonal structure with (100), (002), (101), (102) and (110) reflection planes. The preferred orientation of samples prepared using zinc chloride and zinc nitrate precursors were (002) plane. For sample prepared using zinc acetate, preferred orientation changed from (002) to (101). ZnO thin films prepared using different precursors grew with different surface morphology. For zinc chloride, zinc acetate and zinc nitrate, samples had microrod, plate-like and randomly shaped grains, respectively. Low optical transmittance (~20%) were found for sample prepared using zinc chloride. Other samples prepared using zinc acetate and zinc nitrate had high transmittance (~70–80%). Band gap values of samples were found 3.22, 3.31 and 3.25 eV for zinc chloride, zinc acetate and zinc nitrate, respectively. Photoluminescence measurements for samples prepared using zinc chloride and zinc acetate indicated a sharp ultraviolet luminescence at ~380 nm. However, sample prepared using zinc nitrate had a high intensity broad defect peak between 500–800 nm. 199 (02_PP39) Structural, Elastic, Electronic and Lattice Dynamical Properties of LiZnAs F. Soyalp Yüzüncü Yıl University, Faculty of Education, Theoretical Physics Research Laboratory, Van, Turkey, fsoyalp@yyu.edu.tr By means of first principles calculations within density functional theory, we have studied the structural, elastic, electronic and phonon properties of the LiZnAs in α phase. Bulk properties including lattice constants, static bulk modulus, first-order pressure derivative of the bulk modulus, elastic constants are reported and compared with available experimental and other theoretical results. The lattice constant of LiZnAs in α phase is found to be 5.792 Å, which compares very well with the experimental value of 5.939 Å. The second-order elastic constants, the electronic band structures and the related total and partial density of states are presented. Then, a linear-response approach to the density functional theory is used to derive the phonon dispersion curves and phonon partial and total density of states. Atomic displacement patterns for LiZnAs at the Ӷ point are also presented. This work was supported by the Yüzüncü Yıl University Research Project Unit under Project No. 2015-HIZ-EF307 200 (02_PP40) Theoretical Prediction of the Ground-State Properties of Nowotny–Juza LiMgN and LiZnN Compounds F. Soyalp1 and G. Uğur2 1 Yüzüncü Yıl University, Faculty of Education, Theoretical Physics Research Laboratory, Van, Turkey, fsoyalp@yyu.edu.tr 2 Gazi University, Faculty of Science, Department of Physics, Ankara, Turkey, gokay@gazi.edu.tr The ground state and electronic properties of LiMgN and LiZnN in α phase have been examined using density functional theory within the local density approximation. The ground state properties, including, lattice constants, bulk modulus and first-order pressure derivative of the bulk modulus are in reasonable agreement with the available experimental and theoretical data. The elastic constants Cij are computed using the total energy variation versus strain technique. The electronic band structures and the related total density of states are presented. Then, a linear-response approach to the density functional theory is used to derive the phonon dispersion curves and phonon partial and total density of states. Atomic displacement patterns for both materials at the Ӷ point are also presented This work was supported by the Yüzüncü Yıl University Research Project Unit under Project No. 2013-EF-B036 201 (02_PP41) Illumination Effect on the Electiricial of an Al/p-GaSe Schottky Diode F. Ş. Özçelik, H. Budak, S. Duman, A. Ashkhasi, B. Gürbulak 1 Atatürk University, Science Faculty, Physics Department, 25240 Erzurum, Turkey fs_ozcelik@hotmail.com, budaknisa78@gmail.com, sduman@atauni.edu.tr, afsoon.ashkhasi@gmail.com, gurbulak@atauni.edu.tr Al/GaSe Schottky barrier diode is fabricated and some parameters have been investigated by the current–voltage (I–V) measurements. The forward I–V characteristics have been analysed on the basis of standard thermionic emission theory and the characteristic parameters of the Schottky barrier diode such as barrier heights, ideality factors and series resistances have been determined from the measurements of I–V characteristics. The current–voltage characteristics of Al/GaSe diode measured in dark and under white light illuminations at room temperature. The various parameters obtained from Norde's functions are calculated. The illumination effect on the I-V measurement of Al/GaSe was also performed to reveal the characteristics parameters. Keywords: p-GaSe, dark, illumination, ideality factor. 202 (02_PP42) The Effect of Sn Doping on Urbach Tail and Optical Absorption Measurements of InSe crystal S. Duman1, B. Gürbulak2, S. Doğan3, F. S. Özçelik2 1 2 Erzurum Technical University, Erzurum, Turkey, sduman@atauni.edu.tr, Atatürk University, Erzurum, Turkey, gurbulak@atauni.edu.tr, fs_ozcelik@hotmail.com, 3 Balıkesir University, Balıkesir, Turkey, dogans@balikesir.edu.tr InSe and n-InSe:Sn crystals grown by Bridgman-Stockbarger method. Absorption measurements have been carried out in InSe and InSe:Sn samples in the temperature range 10–320 K with a step of 10 K. Sn doping to InSe have increased the absorption intensity and caused both increasing in the Urbach energy, decreasing in the steepness parameters and shifting of the absorption edge towards the shorter wavelengths. The steepness parameters and Urbach energy values for InSe and InSe:Sn samples have also increased with increasing sample temperature in the range 10-320 K. Keywords: InSe-InSe:Sn crystals; Crystal growth; Urbach energy. 203 (02_PP43) The Effects of Sample Temperature and Termal Annealing on Characterıstıc Parameters of Au/n-InP/In Schottky Diodes Determined from Capacitance-Voltage Measurements F. E. Cimilli Çatır1, M. Sağlam2 and A. Türüt3 1 Erzincan University, Erzincan, Turkey, fcatir@erzincan.edu.tr Atatürk University, Erzurum, Turkey, msaglam@atauni.edu.tr 3 İstanbul Medeniyet University, İstanbul, Turkey, abdulmecit.turut@medeniyet.edu.tr 2 The Schottky barrier diodes were prepared using n-type InP (100) wafer. Their characteristic parameters were calculated according to the sample temperature. The reverse bias capacitance voltage (C-V) measurements of the Schottky diodes have been measured between 300-10 K with 10K steps. The temperature dependent C-V characteristics of the Schottky contacts were carried out at 1 MHz frequency, and the behavior of barrier height against annealing at 400oC have been investigated. The values of barrier height obtained from C-2-V plots of Au/nInP/In diodes vary from 0.546eV (300 K) to 0.271eV (10 K). However, the barrier height values of the annealed (at 400oC) Au/n-InP/In Schottky diodes vary from 0.662eV (300 K) to 0.395eV (10 K). It is observed that the barrier heigth values determined from C-V measurements increased after annealing at 400oC while the ideality factor values decreased. Finally, the temperature dependent diffusion potentials, doping concentrations, and the fermi energy values were obtained from C-V characteristics. Keywords: Schootky diode, C-V characteristics, thermal annealing, inhomogeneous barrier height 204 (02_PP44) The Effects of Sample Temperature and Termal Annealing on Characteristic Parameters of Au/n-InP/In Schottky Diodes Determined from CurrentVoltage Measurements F. E. Cimilli Çatır1, M. Sağlam2 and A.Türüt3 1 Erzincan University, Erzincan, Turkey, fcatir@erzincan.edu.tr Atatürk University, Erzurum, Turkey, msaglam@atauni.edu.tr 3 İstanbul Medeniyet University, İstanbul, Turkey, abdulmecit.turut@medeniyet.edu.tr 2 The Au/n-Inp/In Schottky diodes fabricated using n-type InP (100) wafer. The current-voltage (I-V) characteristics were measured before and after annealing the sample at 400oC for 3 min. The values of the barrier height obtained from I-V measurements for as-deposited Au/nInP/In Schottky diodes vary from 0.517, eV (300 K) to 0.128, (10 K), and the ideality factors vary from, 1.016, (300 K) to, 11.898, 9 (10 K). However, the barrier hight values of the annealed (at 400oC) Au/n-InP/In Schottky diodes vary from, 0.570 eV (300 K) to 0.034, eV (10 K) while the ideality factors vary from 1.008 (300 K) to 3.150 (10 K). Because of accompanying two different mean barrier height values to the Schottky diodes for the 0-150 K and 150-300 K temperature ranges, barrier height matches with the double Gaussian model of barrier height. Keywords: Schootky diode, I-V caharacteristics, thermal annealing, ideality factor, inhomogeneous barrier height, double Gaussian model 205 (02_PP45) The Effect of Annealing on The Electrical Characterization of Cu/n Type InP Schottky Diodes C-V Measurements as a Function of Sample Temperature F. E. Cimilli Çatır1, M. Sağlam2 and A. Türüt3 1 Erzincan University, Erzincan, Turkey, fcatir@erzincan.edu.tr Atatürk University, Erzurum, Turkey, msaglam@atauni.edu.tr 3 İstanbul Medeniyet University, İstanbul, Turkey, abdulmecit.turut@medeniyet.edu.tr 2 In this study the Cu/n Type Inp Schottky Diodes were fabricated and their characteristic parameters measured. Before fabricating process the n-InP crystal was ultrasonically cleaned and then In metal was used for ohmic contacts and Cu metal as a rectifier. The evaporation process existed at about 10-5 Torr pressure at the vacuum plating unit. The capacitancevoltage (C-V) characteristics of the Cu/n type InP Schottky diodes have been measured between 300-10 K with 10K steps at 1 MHz frequency. To analyze the effect of annealing, the Cu/n type InP Schottky diodes have been annealed at 400oC for three minutes in flowing N2 and the C-V measurements against investigated. Depending on annealing temperature, the change of the electrical characterization of the device has been examined. Keywords: Schootky diode, C-V characteristics, thermal annealing, inhomogeneous barrier height 206 (02_PP46) The Effect of Annealing on The Electrical Characterization of Cu/n Type InP Schottky Diodes I-V Measurements as a Function of Sample Temperature F. E. Cimilli Çatır1, M. Sağlam2 and A.Türüt3 1 Erzincan University, Erzincan, Turkey, fcatir@erzincan.edu.tr Atatürk University, Erzurum, Turkey, msaglam@atauni.edu.tr 3 İstanbul Medeniyet University, İstanbul, Turkey, abdulmecit.turut@medeniyet.edu.tr 2 The Schottky barrier diodes were prepared using n-type InP (100) wafer. The wafer was degreased consecutively to remove the surface damages and undesirable impurities. The ohmic contact was made by evaporating In and annealing at 320 oC under N2 atmosphere. The Schottky contacts with 0,5 mm diameter were formed on the front face of sample. The I–V characteristics of the devices were measured in the temperature range of 20K and 300K. After formation of the Schottky diodes, the samples were annealed at 400 oC in flowing N2. The I– V characteristics of Cu/n Type Inp Schottky diodes were obtained again as a function of temperature. The experimental I–V characteristics of the as-deposited and 400 oC annealed Cu/n Type Inp Schottky diodes are in a good agreement with the traditional thermionic emission (TE) theory. Keywords: Schootky diode, I-V characteristics, thermal annealing, thermionic emission (TE) theory, ideality factor 207 (02_PP47) Using of Iron Pyrite Thin Film as Counter Electrode in Dye-Sensitized Solar Cells to Reduce Cost and Increase Efficiency Gökhan Haseki1, Mansur Aşgın2, Oğuz Can Özer3, Bayram Kılıç4 1 Yalova University, Department of Energy Systems Engineering, Faculty of Engineering, Yalova, Turkey, gokhanhaseki@gmail.com 2 Yalova University, Department of Energy Systems Engineering, Faculty of Engineering, Yalova, Turkey, mansurasgin@gmail.com 3 Yalova University, Department of Energy Systems Engineering, Faculty of Engineering, Yalova, Turkey, oguzcanozer@gmail.com 4 Yalova University, Department of Energy Systems Engineering, Faculty of Engineering, Yalova, Turkey, bkilic@yalova.edu.tr Day by day, rising energy costs, renewable energy sources has driven the technology of solar cells, which are indispensable in one's studies. Studies on organic component of cells increased in order to reduce the cost, facilitate production and increase efficiency of traditional cells. In the DSSC photo-anode, typically Platinum element-containing compounds are used. In the process of extraction from the ore of platinum, requires series cleaning process, which is one of the most important parameter that increases the cost. In this study, anatase TiO2 and cubic FeS2 hybrid nanostructures were obtained by hydrothermal method on the FTO (F:SnO2). Ruthenium based organic dye (N719) was absorbed on hybrid nanostructures and DSSC was produced. Results of the structural and optical characterization (SEM, FTIR, XRD, UV-VĠS, EDAX, XPS) of hybrid nano-structures observed that high crystal quality. The size of the cubic FeS2 structure is observed that the 0.3 µm and the size of the anatase TiO2 structure is 0.03 µm. Using of Iron pyrite as a counter electrode in DSSC, was increased the efficiency and was reduced the cost. 208 (02_PP48) Au/n-ZnO/p-Si/Al Heterojunction Diode by Sol-Gel Method E. F. Keskenler1, G. Öztürk1, M. Tomakin1, and V. Nevruzoğlu1 1 Recep Tayyip Erdoğan University, Rize, Turkey, keskenler@gmail.com; gokturkozturk@yahoo.com; murattomakin@yahoo.com; vagif.nevruzoglu@erdogan.edu.tr We report fabrication of an Au/n-ZnO/p-Si/Al heterojunction diode by Sol-gel spin coating method. X-ray diffraction study showed that the texture of the film is hexagonal with a strong (002) preferred direction. The obtained ZnO thin films had more porous character from the scanning electron microscope image. High purity vacuum evaporated gold (Au) and aluminum (Al) metals which are very thin were used to make ohmic contacts to the n-ZnO/pSi heterojunction structure. The electrical properties of Au/n-ZnO/p-Si/Al diode were investigated by using current-voltage measurements. Au/n-ZnO/p-Si/Al heterojunction diode showed a rectification behaviour, and its barrier height value and ideality factor were calculated by applying a thermionic emission theory. The values of series resistance from dV / d(lnI) versus I and H(I) versus I curves were found. Ideality factor of Ag/n-ZnO/p-Si/Al heterojunction diode is greater than unity, which indicates that thermionic emission is not the only conduction mechanism for the current flow. Φbo and other main electrical parameters, such as n and Rs can also be obtained using a method developed by Cheung and Cheung. 209 (02_PP49) Deposition of Te doped ZnO by Sol-Gel Method G. Turgut1, G. Öztürk2 and E. F. Keskenler2 1 2 Erzurum Teknik University, Erzurum, Turkey, guventrgt@gmail.com Recep Tayyip Erdoğan University, Rize, Turkey, gokturkozturk@yahoo.com; keskenler@gmail.com In this study, Te doped ZnO thin films has been fabricated by sol-gel spin coating, using methanolamine, 2-methoxyethanol, zinc acetate dehydrate and tellurium tetrachloride for precursor solution. Structural, morphological and optical properties of Te doped sol-gel prepared ZnO thin films were investigated. It was observed that the hexagonal wurtzite structure for all ZnO samples and cubic zinc blende structure for 3 and 5 % at ZnTe. The obtained films exhibited wurtzite (002) preferential growth in all the dopant ratios. SEM images of Te doped ZnO films showed the morphology and grain size and grain distribution of ZnO depend on Te dopant content. The grain sizes calculated from Scherrer’s formula of the films were varied in range of 107-188 nm. The band gap energy values were determined as 3.35, 3.29, 3.27, 3.25, 3.16 eV, respectively for undoped ZnO and 1%, 2%, 3%,5% at. Te doped ZnO samples. Also, Urbach energy values of samples were found to be 2.07, 1.72, 1.34, 1.32, 0.97 eV for undoped ZnO, 1, 2, 3 and 5 at. % Te doped ZnO, respectively. Thus, Te doped ZnO thin films can be useful for many optoelectronic device applications. 210 (02_PP50) Oxygen Pressure Effects on The Magnetron Sputtered Wo3 Films G. Merhan Muğlu1, E. Gür1 1 Atatürk University, Erzurum, Turkey, gunaymerhan36@gmail.com 1 Atatürk University, Erzurum, Turkey, emregur@atauni.edu.tr Electrochromism is a changing color of a substance in response to the applied an external electric field and the phenemonenon is reversible. WO3 is very attractive material due to its electrochromic properties useful in many different application like gas sensors, phosphorous screen, textile, glass industry. In this study, it is aimed to provide optimization of the optical and structural characteristics of WO3 by changing the growth parameters mainly the oxygen partial pressure. The partial pressure of oxygen was changed with increments of 0.7 mTorr. For the analysis, X-ray Diffraction (XRD), absorption, Raman spectroscopy measurements were used. When values of O2 gas were increased in medium, distinct peak was observed in XRD patterns. Increasing O2 partial pressure led to the formation of XRD peaks for WO3 films grown on ITO and the p-Si substrate. Peaks came from WO3 films belonging to (002), (020) and (220) planes was observed 23, 11, 23,5 and 28,5 angles This shows that there is a significant effect of increasing O2 partial pressure in the formation of WO3 films. Obtained results indicated that obtain of better crystal structure is possible by increasing the rate of O2 gas in WO3 thin films growth process according to XRD patterns. 211 (02_PP51) The Effect of Series Resistance on Au/Antracene/N-Si/Al Heterojunction at Low Temperatures H. Kaçuş1, Z. Çaldıran1, Ş. Aydoğan1, A. R. Deniz2 and D. Ekinci3 1 2 Department of Physics, Science Faculty, Atatürk University, Erzurum, Turkey Department of Electrical and Electronics Engineering, University of Hakkari, Hakkari, Turkey 3 Department of Chemistry, ScienceFaculty, Atatürk University, Erzurum, Turkey haticekacus@hotmail.com An Antracene film was grown on n-Si using electrochemical coating and an Au/Antracene/nSi/Al heterojunction was fabricated. The series resistance (Rs) values of this device was determined with the help Cheung functions at low temperatures. The plots of dV/d(lnI) versus I graph gives a straightline. Series resistance value is determined fromthe slope of this straightline. We have calculated from these values as 268 kΩ at 300 K, 760 kΩ at 140 K, respectively. Furthermore, the series resistance values have been calculated as using the slope of H(I)-I graphs. Both dV/d(lnI)versus I and H(I)-I graphs gave about same values. Inaddition, Rs values have been calculated via Norde functions as 256 kΩ at 300 K, 510 kΩ at 140 K. The increase of series resistance values with the fall of temperature was interpreted as a consequence of the increased ionization of free carriers density at high temperatures Figure 1. Serial resistance (Rs )- temperature -characteristics of theAu/Antracene /n-Si/Al heterojunction and Schematic illustration of Antracene/n-Siheterojunctions 212 References: [1] KaçuĢ, H., Deniz, A.R., Çaldıran, Z., Aydoğan, ġ., Yesildag A., Ekinci, D., 2013. Theanalysis of thecurrentevoltagecharacteristics of thehighbarrierAu/Anthracene/n-Si MIS devices at lowtemperatures.MaterialsChemistryandPhysics, 143 (2014), 545-551. [2] Çaldıran, Z.,Deniz,A.R., Aydoğan, ġ., Yesildag A., Ekinci, D., 2013. Thebarrierheightenhancement of theAu/n-Si/Al Schottky barrier diodebyelectrochemicallyformed an organic Anthracenelayer on n-Si. Superlatticesand Microstructures, 56 (2013), 45–54. [3] Aydoğan, ġ.,Ġncekara, Ü., Türüt, A., 2010. Determination of contactparameters of Au/Carmine/n-Si Schottkydevice. Thin Solid Films, 518 (2010), 7156–7160. [4] Çaldıran, Z., Deniz, A. R., CoĢkun F. Mehmet., Aydoğan, ġ., Yesildag A., Ekinci, D.,2014. I–V–T (current–voltage–temperature) characteristics of the Au/Anthraquinone/pSi/Al junctiondevice. Journal of Alloys and Compounds, 584 (2014) 652–657. 213 (02_PP52) Au/Anthracene/N-Si/Al Heterojunction of the Barrier Height Determining with Different Methods H. Kaçuş1 , Z. Çaldıran1 , Ş. Aydoğan1 , A. R. Deniz2 and D. Ekinci3 1 2 Department of Physics, Science Faculty, Atatürk University, Erzurum, Turkey Department of Electrical and Electronics Engineering, University of Hakkari, Hakkari, Turkey 3 Department of Chemistry, ScienceFaculty, Atatürk University, Erzurum, Turkey haticekacus@hotmail.com In this study, Au/Antracene/n-Si/Al heterojunction of barrier height was calculated from traditional methods, Cheung functions, Norde functions, reverse bias 1/C2 -V characteristics in the temperature range 300 K-160 K. This methods with obtained the barrier height of values were observed to increase with temperature. Barrier height values of the Au/Anthracene/n-Si/Al within the I-V characteristic were calculated as 0.87 eV at 300 K, 0,52 eV at 160 K. The barrier height values of this device were calculated via Cheung functions as 0.57eV at 300 K, 1.30 eV at 160 K. The values of the barrier height found from reverse bias 1/C2 -V characteristics as 0.87eV at 300 K, 0.53 eV at 160 K. Inaddition, we have calculated barrier height values visa Norde functions as 0.83 eV at 300 K, 0,53 eV at 160 K. Consequently, the values of the barrier height showed a compatible behavior with all of the methods. Figure 1. Barrier Height (eV) - temperature characteristics of the Au/Antracene /n-Si/Al heterojunction 214 References: [1]KaçuĢ, H.,2014. Master Thesis, Atatürk University The Institute of Science, Erzurum. [2] Çaldıran, Z., Aydoğan, ġ., Yesildag A., Ekinci,D.,S.V.Kurudirek ., A.Türüt,2015.Temperature-dependentcurrent– voltagemeasurements of Au/C9H7N/pSi:Characterization of ametal–organic-semiconductordevice. Materials ScienceinSemiconductorProcessing34(2015)58–64. [3] Aydoğan, ġ.,Ġncekara, Ü., Türüt, A., 2010. Determination of contactparameters of Au/Carmine/n-Si Schottkydevice. Thin Solid Films, 518 (2010), 7156–7160. 215 (02_PP53) Interfacial layer thickness effect on the performance of Au/Zn-dopped PVA/n-4H-SiC (MPS) structures at room temperature Havva Elif Lapa1, Ali Kökçe1, İkram Orak2, Şemsettin Altındal3 1 Departmentof Physics, Faculty of Sciences and Arts, Süleyman Demirel University, Isparta, Turkey, elif_l87@hotmail.com 2 Department of Physics, Faculty of Science and Arts, Bingöl University, Bingöl, Turkey 3 Physics Department, Faculty of Sciences, Gazi University, Ankara, Turkey Au/Zn-PVA/n-4H-SiC (MPS) structures with different interfacial layer thickness(50, 150, 500 nm) and their electrical parameters such as reverse-bias saturation current(Io), ideality factor(n), zero-bias barrier height(Φbo), series and shunt resistances(Rs, Rsh optainedby using current-voltage(I-V) measurements at room temperature.These values were found as 1.50x10-11, 110 A, 3.30 and 0.85 eV, 51.92 , 715 for 50 M nmand 7.50x10-12A, 4.28 and 0.86 eV, 190.62 , 29141 for 500 nm, respectively. It is clear that , 1300 M while the values of n, Φbo, Rs and Rsh increases with increasing interlayer thickness, Io decreases. In addition, there is a linear correlation between n andΦbo.The high values of n for each sample was attributed to the existence of interfacial layer, surface states, barrier inhomogeneities. The energy density distribution profile of surface states(Nss) were obtained from the forward bias I-V data taking into account voltage dependent effective barrier height(e) and n for each sample. The voltage dependent profile of ofresistance(Ri) were also obtained by using Ohm’s Law for each sample. Experimental results are confirmed that both the Rs,Rsh, the thicknes of interfacial layer and Nss values aremore important parameters which considerably influence the performance of these devices. Keywords: Au/Zn-dopped PVA/n-4H-SiC (MPS) structures;Interfacial layer thickness dependent; Main electrical parametres; Surface states and series resistance 216 (02_PP54) The Investigation of Electrical Characteristics in the Au//n-4H-SiC Structures with Different Thicknes of Zn-dopped PVA Interlayer in the Wide Frequency Range Havva Elif Lapa1, AliKökce1, İkram Orak2, Şemsettin Altındal3 1 Departmentof Physics, Faculty of Sciences and Arts, Süleyman Demirel University, Isparta, Turkey 2 Department of Physics, Faculty of Science and Arts, Bingöl University, Bingöl, Turkey 3 Physics Department, Faculty of Sciences, Gazi University, Ankara, Turkey The electrical characteristics of the Au/n-4H-SiC structures with different thicknes of Zndopped PVA interlayer(50, 150, 500 nm) have been investigated as function of frequency and applied bias voltage. The capacitance/conductance-voltage-frequency (C-V-f and G/w-V-f) measurements of these structures were carried out in the frequency range of 1 kHz-1 MHz and dc voltage swepts from -6V to +6V by 50 mV steps at room temperature. Voltage and frequency dependence profiles of surface states(Nss) and resistance of the structure(Ri) were obtained from the forward and reverse bias C-V and G/w-V data by using Nicollian and Brews method. Experimental results show that the C-V and G/w-V plots have inversion, depletion and accumulation regions lika a metal-insulator/oxide-semiconductor (MIS or MOS) type behavior and the values of C and G are considerebly decrease with increasing frequncy especialy in depletion and accumulation regions due to the particular density distribution of Nss at M/S interface and Rs, respectively.While the values of C become decrease in the strong accumualtion region, G/w increases due an inductive behavior of the structure in this region.The obtained experimental results revealed that the thicknes of interlayer, Rs and Nss have an important effect on C-V and G/w-V characteristics of MPS structure. Keywords:MPS type structures;Zn-dopped PVA interlayer and its thickness; Frequency and voltage dependence; Surface states and series resistance effects E-mail address:elif_l87@hotmail.com 217 (02_PP55) Fabrication and Electrical Characterization of Al/n-ZnO/p-Si/Al Heterojunction Diode H. Doğan1, E. Şenadım Tüzemen2, S. Duman 3, F. Ş. Özçelik3 1 Department of Electrical-Electronics Engineering, Cumhuriyet University, Sivas 58140, Turkey, hdogan@cumhuriyet edu.tr 2 Nanophotonics Center, Department of Physics, Cumhuriyet University, Sivas 58140, Turkey esenadim@cumhuriyet.edu.tr 3 Department of Physics, Atatürk University, Erzurum 25240, Turkey, sduman@ata.uni.edu.tr ZnO thin film was prepared on the p-Si (100) for the heterojunction diode fabrication by pulsed filtered cathodic vacuum arc deposition (PFCVAD) at room temperature. The base pressure of the deposition chamber was 10-5 Torr and the working pressure was 3.33×10-2 Torr. Aluminum (Al) metals were used to make Ohmic contacts to the n-ZnO/p-Si heterojunction structure. The electrical properties of Al/n-ZnO/p-Si/Al diode were investigated by using current–voltage measurements. Al/n-ZnO/p-Si/Al heterojunction diode showed a rectification behavior, and its ideality factor and barrier height values were found by applying a thermionic emission theory. The values of series resistance from dV/d (ln I) versus I and H(I) versus I curves were found. 218 (02_PP56) The Investigation of Electrical Characteristics of Ag/Ru-Doped PVP/n-Si Structures as Function of Frequency at Room Temperature Gamze Kaya1 , Yosef Badali2, Afsoun Nikravan3, , Şemsettin Altındal4, İbrahim Uslu5 1 Department of Chemistry, Institute of Science and Technology, Gazi University, Ankara, Turkey, gamzechem@gmail.com 2 Department of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, Turkey, bedeli.yusuf@gmail.com 3 Department of Environmental Engineering,Institute of Science, Hacettepe University, Ankara, Turkey, afsun.nikravan@gmail.com 4 Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey, altundal@gazi.edu.tr 5 Department of Chemistry Education, Gazi Faculty of Education, Gazi University, Ankara, Turkey, profibrahimuslu@gmail.com In this study, electrical characteristics of the Ag/Ru-doped PVP/n-Si structures have been investigated in detail by using impedance spectroscopy method in wide range of frequency of 0.5 kHz-5 MHz at room temperature. The concentration of donor atoms (ND ), barrier height (B) and series resistance values of the structure were obtained the reverse bias C -2 vs V plots for each frequency ant they have a good linear range in the wide reverse bias voltage. The values of ND and B were found as 1.17x1015 cm-3 and 0.858 eV at 0.5 kHz and 0.135x1015 cm-3 and 1.22 eV at 5 MHz at room temperature. The values of capacitance (C)Nd and conductance (G) decreases with increasing frequency as almost exponentially especially at strong accumulation region. The change in electrical parameters becomes more effective especially at low frequencies due to the effects of charges at surface states and their ), dipole and surface polarizations and Ru-doped PVP relaxation time ( interfacial layer. As a result, the high values of main electrical parameters at low frequencies can be attributed to the charges surface states (Nss) and polarization processes. Voltage dependent profiles of Nss and Rs of structure were also obtained for each frequency. Keywords: Ag/Ru-doped PVP/n-Si structures; Electrical characteristics; Impedance spectroscopy methods; Voltage dependent profile of surface states Acknowledgement This work was supported by ARTEMIZ Research and Development (R&D) Company. ARTEMIZ is an establishment which is financially supported by Small and Medium Enterprises Development Organization (KOSGEB), Republic of Turkey. 219 (02_PP57) Influence of Frequency and Applied Voltage on Dielectric Properties, Electric Modulus and Electrical Conductivity in Au/ZnO/n-Si Structures Yosef Badali1, Afsoun Nikravan2, Gamze Kaya3, Şemsettin Altındal4, İbrahim Uslu5 1 Department of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, Turkey, bedeli.yusuf@gmail.com 2 Department of Environmental Engineering, Institute of Science, Hacettepe University, Ankara, Turkey, afsun.nikravan@gmail.com 3 Department of Chemistry, Institute of Science, Gazi University, Ankara, Turkey, gamzechem@gmail.com 4 Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey, altundal@gazi.edu.tr 5 Department of Chemistry Education, Gazi Faculty of Education, Gazi University, Ankara, Turkey, profibrahimuslu@gmail.com In this study, the frequency and voltage dependence of dielectric constant (’), dielectric loss (’), loss tangent (tan), ac electrical conductivity (ac), real and imaginary parts of electric modulus (M’ and M’’) of Au/ZnO/n-Si structures have been investigated in the wide frequency range of 0.7 kHz-2 MHz by using capacitance-voltage (C-V) and conductancevoltage (G/-V) measurements at room temperature. The obtained experimental results confirmed that the all of these parameters strong function of frequency and voltage especial in inversion and depletion regions. These changes in dielectric parameters and ac were attributed to the existence surface states (Nss) and interfacial layer at metal/semiconductor interface, surface polarization especially at low frequencies. In addition, the values of ', '' and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of ac increase with increasing frequency. As a result, the change in the ε', ε'', tanδ, M', M'' and ac is a result of restructuring and reordering of charges at M/S interface under external electric field and polarization processes. Keywords: Au/ZnO/n-Si structures; Dielectrical properties; Electric modulus and conductivity Acknowledgement This work was supported by ARTEMIZ Research and Development (R&D) Company. ARTEMIZ is an establishment which is financially supported by Small and Medium Enterprises Development Organization (KOSGEB), Republic of Turkey. 220 (02_PP58) Frequency and Voltage Dependence of the Main Electrical Parameters of Au/ZnO/n-Si Structures at Room Temperature Afsoun Nikravan1, Gamze Kaya2, Yosef Badali3, Şemsettin Altındal4, İbrahim Uslu5 1 Department of Environmental Engineering, Institute of Science, Hacettepe University, Ankara, Turkey, afsun.nikravan@gmail.com 2 Department of Chemistry, Institute of Science and Technology, Gazi University, Ankara, Turkey, gamzechem@gmail.com 3 Department of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, Turkey, bedeli.yusuf@gmail.com 4 Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey, altundal@gazi.edu.tr 5 Department of Chemistry Education, Gazi Faculty of Education, Gazi University, Ankara, Turkey, profibrahimuslu@gmail.com Frequency and voltage dependence of some main electrical parameters of Au/ZnO/n-Si structures such as the concentration of donor atoms (ND), Fermi energy level (EF), barrier height (B) and series resistance of the structure (Rs) were obtained by using capacitancevoltage (C-V) and conductance-voltage -V) measurements at room temperature. These measurements were (G/ carried out in the frequency range of 0.7 kHz- 2 MHz and voltage range of (-6 V) – (+6 V) by 0.05 V steps. Both C-V and G/w-V plots have reverse, depletion and accumulation regions like quite good metal-insulator/oxide-semiconductor (MIS or MOS) structures/capacitors. Both the values of values increase with decreasing frequency because of the surface states (Nss) can follow the ac signal and yield an excess capacitance (Cex.) and conductance (Gex), which ./ depends on the relaxation time of them and the frequency of the ac signal. In addition, voltage dependent profiles of Nss and Rs of structure were obtained from the high-low frequency capacitance and Nicollian and Brews methods, respectively. Keywords: Electrical properties; Main electrical parameters; Voltage dependent of surface states and series resistance Acknowledgement This work was supported by ARTEMIZ Research and Development (R&D) Company. ARTEMIZ is an establishment which is financially supported by Small and Medium Enterprises Development Organization (KOSGEB), Republic of Turkey. 221 (02_PP59) The Preparation of Different Interfaced (Zn-PVA) Structures of Al/p-Si (MPS) and Analysis of I-V and C/G-V Electrical Characteristics Behiza Bilgen Benli1, Şemsettin Altındal2, İbrahim Uslu3 1 Department of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara/Turkey, behizabilgen@gmail.com 2 Department of Physics, Faculty of Science, Gazi University, Ankara/ Turkey, altundal@gazi.edu.tr 3 Department of Chemistry Education, Faculty of Education, Gazi University, Ankara/Turkey, profibrahimuslu@gmail.com In this study, in order to determine the effects of different thicknesses on electrical parameters of the interfacial layer, we prepared five different thicknessed (5 nm, 10 nm, 20 nm, 30 nm, 50 nm) samples with 0.03 Zn-doped Polyvinyl alchohol (PVA) between Al and th p-Si. In this analysis, we investigated some diode parameters with using reverse and forward bias currentvoltage (I-V) measurements, such as ideality factor (n), reverse-forward bias saturation current (Io), barrier height (FBo), ohmic and shunt resistance (Rs ve Rsh) and rectification rates (RR=IF/IR). Interface states (Nss) connected to the energy distrubiton profile, taking account into the changes caused by voltages FBo and n value was obtained for each sample. At 1 MHz frequency, from reverse and forward bias capasitance-voltage (C-V) and conductance-voltage (G/w-V) measurements, we gained barrier height (FB(C-V)), the concentration of the recipient contribute atoms (Na), Rs and deplation layer width (WD) calculated and compared. For every sample on C-V curves, at direct voltage there was abnormal peak and at forward voltages the curve value was going to negative. It’s thought to be caused by Nss, Rs and the influence of interface layer. The obtained experimental results showed nearly all the electrical parameters of the thickness of the interfacial layer and homogenity are all quite connected. In this study, it’s observed that the sample with 5nm thickness Zn-doped PVA interfacial layer have the best performance in terms of Rs, Rsh, RR and Nss. Till at a sufficiently high thickness (di≥30nm) showed that the decrease in the performance of the prepared structure. The amount of Zn doping for conductivity in PVA is known to be highly influential on the electrical measurements. However, these studies have been selected for PVA 3% Zn interface layer and the second study is planned to be carried out depending on this study by us. Keywords: The effects of interface states; I-V, C-V ve G/w-V characterisation; negative capacitance; the distrubution profile of the series resistance and interfacial state; MPS diodes; Al/p-Si with Zn-doped PVA Acknowledgement: This work was supported by ARTEMIZ Research and Development (R&D) Company. ARTEMIZ is an establishment which is financially supported by Small and Medium Enterprises Development Organization (KOSGEB), Republic of Turkey. 222 (02_PP60) The Electrical Characteristics of n-Si/TiO2/Al And n-Si/TiO2-GO/Al Schottky Structures in Two Different Temperature İ. Dökme1 and Ö. Vural2 1 Gazi University, Education School, Science Education Department, Ankara / Turkey 2 Amasya University, Science Faculty, Physics Department, Amasya / Tureky The purpose of this study is to investigate whether the graphene oxide doppant in TiO2 would change the electrical characteristics of n-Si/TiO2/Al Schottky Barrier diodes. Therefore, nSi/TiO2/Al (D1) and n-Si/TiO2-GO/Al (D2) Schottky barrier diodes were fabricated. One of the n-type Si surface was covered thin film of TiO2 dispersion and the other one with TiO2 dispersion dopped with graphene oxide by drop casting method. The current–voltage (I–V) characteristics of these device were measured at the temperatures of 150 K and 320 K. Some electrical parameters such as ideality factor (n), barrier height ( B), series resistance (Rs) and interface state density (Nss) were calculated from I-V characteristics for two devices in both two temperatures. The results indicated that the electrical parameters of n-Si/TiO2/Al Schottky device was significantly influenced from the graphene oxide doppant in TiO2. Comparative results in two temperatures on electrical parameters of D1 and D2 were reported in this study by using the SEM, EDR and XRD of TiO2 and TiO2-GO. 223 (02_PP61) The Electronic Structure, Elastic and Vibrational Properties of inPd Under Pressure Via First Principles Calculations Y. Ö. Çiftçi1, İ. Ö. Alp2 1 2 Gazi University Department of Physics, Ankara, Turkey, yasemin@gazi.edu.tr Gazi University Department of Physics, Ankara, Turkey, iremoner@gazi.edu.tr Intermetallic compounds have a significant role in heterogeneous catalysis because of being highly active with regard to a specific reaction. Furthermore, palladium-based materials provide an advantage in selectivity and long-term stability. It is predicted that InPd compound crystallizes in cubic phase (space group: Pm-3m) with a lattice parameter of a=3.295 Å by accurate first-principles calculations performed within density functional theory implemented as Cambridge Sequential Total Energy Package (CASTEP) code. The exchangecorrelation potential was considered by the generalized gradient approximation (GGA) in the scheme of Perdew-Burke-Ernzerhof (PBE) using Vanderbilt ultrasoft pseudopotential. The plane wave cutoff energy of 600 eV and the 14×14×14 Monkhorst-Pack k-points have been set for calculations. The band structure diagram along the high symmetry points in the first Brillouin zone shows that InPd exhibits metallic character. To obtain the second-order elastic constants (Cij), the ―stress-strain‖ method is used. It is found that InPd is mechanically stable in terms of Born’s criteria. The phonon dispersion plotted in high symmetry directions for 2x2x2 supercell indicates the dynamical stability. The obtained results are in good agreement with the experimental value. In addition, the effects of pressure on the mentioned properties of InPd have been computed up to 50 GPa. 224 (02_PP62) Pressure Dependence of Electronic, Elastic and Phonon Properties of Tise2 İ.Ö. Alp1, Y.Ö. Çiftçi2 1 Gazi University Department of Physics, Ankara, Turkey, iremoner@gazi.edu.tr Gazi University Department of Physics, Ankara, Turkey, yasemin@gazi.edu.tr 2 In this study, we have examined pressure dependence of the electronic, elastic and phonon properties of TiSe2 using first-principles calculations based on density functional theory. TiX2 compounds show a great potential for a variety of technological applications due to their anisotropic structure and interesting electronic properties. Trigonal phase of TiSe2 (space group P-3m1, no. 164) is investigated using the pseudo potential projector augmented wave (PAW) method within the generalized gradient approximation of Perdew, Burke and Ernzerhof (GGA-PBE) implemented as Cambridge Sequential Total Energy Package (CASTEP) code. The lattice constants are found to be a=3.517 Å and c=6.702 Å. The wave functions are expanded through a plane-wave basis set with a cutoff energy of 550 eV. Numerical integration of Brillouin-zone is performed using the Monkhorst-Pack scheme and k-point meshes are constructed as 15x15x8. The computed elastic constants correspond to equilibrium lattice parameter indicate that TiSe2 has mechanical stability. We have also calculated the electronic band structure with total and partial dos for the compound which exhibits semi-metalic character. The phonon dispersion in high symmetry directions for 2x2x2 supercell is presented. The obtained results are in good agreement with the available experimental and other theoretical values. 225 (02_PP63) Laterally Inhomogeneous Barrier Analysis of Cu/n-GaP/Al Schottky Devices 1 K. Çınar Demir1, S. V. Kurudirek2, S. Öz2, C. Coşkun3 and M. Biber2 Atatürk University, Oltu Earth Sciences Faculty, Department of Mining Engineering, 25400 Erzurum, Turkey 2 Atatürk University, Faculty of Sciences, Department of Physics, 25240 Erzurum, Turkey 3 Giresun University, Faculty of Arts and Sciences, Department of Physics, 28100, Giresun, Turkey In this work, we investigated the electrical parameters of Cu/n-GaP/Al Schottky structures at room temperature and examined the electrical characterization of these devices depending on I-V (Current-Voltage) and C-V (Capacitance-Voltage) measurements. A statistical study on the experimental barrier heights and ideality factors of the diodes was performed. The barrier heights (BHs) and ideality factors of all devices have been calculated from the electrical characteristics. Although the diodes were all identically prepared, there was a diode-to-diode variation: the effective barrier heights ranged from 0.988-0.07 to 1.216-0.07 eV, and the ideality factor from 1.01-0.299 to 2.16-0.299. The obtained results indicate that the barrier heights and ideality factor parameters of Schottky diodes are different from one diode to another, even if they are identically prepared. It is concluded that the higher ideality factors accompany with the lower BHs or vice versa due to inhomogeneities. 226 (02_PP64) Core Excitation in Polymorph of As2S3 and β-phase In2S3 1,2* Lawal Mohammed, 1Ahmad Radzi Mat Isa, 1M. A. Saeed, 1Auwalu Musa and 1A. M. A. Bakheet 1 Universiti Teknologi Malaysia, 81310 UTM Johor Bahru, Johor, Malaysia 2 Ahmadu Bello University, Zaria, 833201, Zaria, Kaduna, Nigeria Single level excitonic effects on the core state of the polymorph of As2S3 and tetragonal In2S3 were studied using X-ray absorption spectroscopy. The results show good similarities in Arsenic L3 (s, d)-edges peaks for the two phases of As2S3 orpiment and anorpiment crystals. Optical absorption increases most due to core-hole for S K (p) and As L3-edges in orpiment as compared to the other structures. The core-level calculations for these orbitals show good agreement with the experimental ones thus validating the approach used in this study. In orpiment and anorpiment, show an indirect energy band gap which has been improved by the mBJ potential to about 1.03 eV and 0.65 eV respectively. We have calculated the imaginary dielectric function and the absorption coefficient with the mBJ potential and core-hohe, the optical excitations, is observe to be enhance by core level spectroscopy for all the crystals. Furthermore, the bond length and angles of monoclinic and triclinic As2S3 as well as the betaphase In2S3 compared well with the experimental results. Structural optimization and total energies of all structures are computed using the most precise all electrons full potential linearized augmented plane wave plus local orbitals (FP-LAPW + lo) within the framework of DFT. Keywords: structure chalcogenide; core hole; X-ray absorption; optical properties; electronic 227 (02_PP66) Electronic, Optic and Dynamic Properties of Rhombohedral BiTeBr Mehmet Nurullah Seçuk1, Harun Akkuş2 1 Yüzüncü Yıl University,Van, Turkey m.nurullahsecuk@yyu.edu.tr 2 Yüzüncü Yıl University,Van, Turkey harunakkus@yyu.edu.tr Ground state electronic, optic and dynamic properties of single-layer rhombohedral BiTeBr crystal have been investigated by density functional theory under local density approximation by PAW method in this study. Physical properties of topological semiconductor BiTeBr such as lattice parameters, electronic DOS, electronic band structure, imaginary and real parts of linear dielectric function, volume and surface loss functions, absorption and extinction coefficients, reflectivity and refraction index, phonon DOS and frequency dependent phonon spectrum were studied. 228 (02_PP67) Optic, Dynamic and Thermodynamic Properties of Rhombohedral BiTeI Mehmet Nurullah Seçuk1, Harun Akkuş2 1 Yüzüncü Yıl University,Van, Turkey m.nurullahsecuk@yyu.edu.tr 2 Yüzüncü Yıl University,Van, Turkey harunakkus@yyu.edu.tr Using density functional theory under local density approximation by PAW method, in this study ground state optic, dynamic and thermodynamic properties of rhombohedral BiTeI crystal have been examined. Physical properties of new type ferroelectric semiconductor BiTeI such as lattice parameters, volume of primitive cell, imaginary and real parts of linear dielectric function and related optical properties, phonon DOS and frequency dependent phonon spectrum, temperature dependent behaviors of some thermodynamic properties of crystal up to 1000 K were investigated. 229 (02_PP68) Structural, Electronic and Dynamic Properties CsIO3 in Orthorhombic and Cubic Phases Remziye Erbil1, Mehmet Nurullah Seçuk2, Harun Akkuş3 1 Yüzüncü Yıl University,Van, Turkey remziye_2026@hotmail.com Yüzüncü Yıl University,Van, Turkey m.nurullahsecuk@yyu.edu.tr 3 Yüzüncü Yıl University,Van, Turkey harunakkus@yyu.edu.tr 2 Structural, electronic and dynamic properties of orthorhombic and cubic phases of CsIO3 crystal have been studied by PAW method using the generalized gradient approximation for orthorhombic and local density approximation for cubic cases under density functional theory and among the physical properties of crystal lattice parameters, electronic DOS’ and electronic band structures, phonon DOS’ and frequency dependent phonon spectra were examined. It was detected from electronic band graphs and phonon spectra that orthorhombic CsIO3 is a stable semiconducting crystal with a direct band gap of 3.16 eV at X symmetry point, whereas cubic CsIO3 is a metallic unstable compound. 230 (02_PP69) Electrical Parameters of Ag/TiO2/InP/Au Structure A. K. Bilgili1, M. Özer2 1 Gazi University, Ankara, Turkey, sunkurt4@gmail.com Gazi University, Ankara, Turkey, metinoz@gazi.edu.tr 2 In this study, Ag/TiO2/InP/Au structure is produced. An interface layer of TiO2 with thickness of 60 Å is formed between metal and semiconductor. The current-voltage characteristics of Ag/TiO2/InP/Au Schottky barrier diode is investigated. By using the forward bias currentvoltage (I-V) characteristics, zero bias barrier height and ideality factor parameters are calculated according to thermionic emission (TE) model. It is seen that these parameters change by change in temperature. Ideality factor degreased and barrier height increased with an increase in temperature. In addition to TE, in order to calculate serial resistance (Rs), a more new method, Cheung-Cheung method, is used. The results are consistent with each other. 231 (02_PP70) CeO2-Based RRAM and Resistive Switching Mechanisms Morteza Vafadar Yengejeh1 and Hasan Efeoğlu1, 2, 3 1 Department of Nanoscience and Nanoengineering, Atatürk University, Erzurum, Turkey, mortezavafadar@gmail.com 2 Department of Electrical & Electronics Engineering, 3 Nanoscience-Nanoengineering and Research Application Centre, Atatürk University, Erzurum Turkey Resistive random access memory (RRAM) is a very promising next generation non-volatile RAM, with quite significant advantages over the widely used silicon-based Flash memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, bit cell size, endurance, retention time, device yield, and multilevel storage. Numerous resistive switching mechanisms, such as ion immigration, Metal–insulator transition, charge trapping/de-trapping, and thermochemical reaction, have been proposed to explain the resistive switching of RRAM devices. As a case for ion immigration, in Cerium dioxide (CeO2), drift of oxygen vacancies play the dominant role in resistance changes. In this work, along with a summary to the resistive switching mechanisms, we shall examine resistive switching behavior of CeO2 thin film, grown on Pt/Ni/SiO2/Si substrate. This work financially supported by Atatürk University Research Foundation, Grant No. BAP 2015/141 232 (02_PP71) Temperature Dependent Electrıcal Characterıstıcs of Zn/ZnSe/n-GaAs/in Structure M. Sağlam and B. Güzeldir Department of Physics, Science Faculty, Atatürk University, Erzurum, Turkey msaglam@atauni.edu.tr We have reported a study of the I–V characteristics of Zn/ZnSe/n-GaAs/In sandwich structure in a wide temperature range of 80–300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The main electrical parameters, such as ideality factor (n) and zerob0) determined from the forward bias Ib0 increased, the n decreased with increasing temperature. Depending of the sample temperature of the ideality factor and barrier height values have been attributed to the presence of the lateral inhomogeneities of the barrier height. Furthermore, the series resistance has been calculated from the I-V measurements according to the temperature dependent. 233 (02_PP72) Effects of Thermal Annealing on Electrical Characteristics of Au-Cu/n-GaAs/In and Ag-Cu/n-GaAs/In Schottky Diodes İ. Kanmaz, S. Küp, O. Özakın, B. Güzeldir and M. Sağlam Department of Physics, Science Faculty, Atatürk University, Erzurum, Turkey msaglam@atauni.edu.tr In this study, Au-Cu/n-GaAs/In and Ag-Cu/n-GaAs/In Schottky structures were obtained by evaporating of Au-Cu and Ag-Cu alloys prepared at laboratory. Firstly, I-V characteristics of these two structures at room temperature and in dark ambient were researched. With the aim of to see effect of thermal annealing, Au-Cu/n-GaAs/In and Ag-Cu/n-GaAs/In Schottky structures were annealed for 5 minutes at 100, 200 and 300℃ at nitrogen medium, respectively and after every annealing process, I-V measurements were repeated at room temperature. Depending on changed annealing temperature, from bias characteristics, ideality factors, barrier heights, series resistance values and rectifying ratios have been calculated by thermionic emission, Cheung and Norde methods and it has been seen that calculated values were in harmony at three different methods. 234 (02_PP73) Effect of Boriding Temperature on the Microhardness Values of Fe-Ni Binary Alloys N. Uçar1, A. Calik2 and A. F. Özdemir1 1 Physics Department, Faculty of Arts and Sciences, Suleyman Demirel University, Isparta, Turkey, nazimucar@sdu.edu.tr ; farukozdemir@sdu.edu.tr 2 Manufacturing Engineering Department, Faculty of Technology, Suleyman Demirel University, Isparta, Turkey, adnancalik@sdu.edu.tr The micro hardness behaviour of Fe-Ni binary alloys have been investigated. In this method, commercial Ekabor- II boron source and activator (ferro-silicon) were thoroughly mixed to form the boriding medium. The samples were boronized in an electrical resistance furnace for exposure times of 2, 6 and 8 h at 1273 K under atmospheric pressure. The microhardness measurements were carried out on the cross-sections from the surface to the interior. Vickers microhardness tester with a load of 100 g as a function of depth and temperature. Microhardness tests of the boronized alloys showed a significant increase in the surface hardness caused by the increased boronizing temperature. The boride layer had a hardness of over 800 HV0.1,1370 HV0.1 and 1990 HV0.1 for 2, 6 and 8 h and 1273 K, respectively, while the substrate’s hardness was approximately 190 HV0.1. 235 (02_PP74) Analysis With Different Methods of Nio Thin Films Growth With Spray Pyrolysis System O. Özakın, A. Taşer, B. Güzeldir and M. Sağlam Department of Physics, Faculty of Science, Atatürk University, Erzurum, Turkey oguzhanozakin@atauni.edu.tr In this study, NiO thin films were deposited onto glass substrates coated gold by thermal evaporator. NiO thin films were growth by fully automated spray pyrolysis equipment with of 100 – 150 – 200 °C and time of 10 – 15 - 20 minutes. The precursor solution was prepared by mixing 0.1 M of Nickel chloride (NiCl2) in 50 mL of ethanol absolute. The deposition parameters were 4 mL in 3 minutes solution flow rate, 90° position of spray nozzle towards the substrate. Atmospheric air was used as carrier gas with 1,5 mbar pressure. Optical, structural and morphological properties of the NiO thin films are investigated by optical methods as a function of changing with substrate temperature. 236 (02_PP75) Electrical and Dielectric Characteristics of Maleic Anhydride Deposited on P-Type Silicon O. Kalmaz1, E. Orhan1, S. Bilge Ocak1 1 Gazi University, Graduate School of Natural and Applied Sciences, Ankara, Turkey sbocak@gazi.edu.tr Al/maleic anhydride (MA)/p-Si metal–polymer–semiconductor (MPS) structures were prepared on p-Si substrate by spin coating. Device parameters of Al/MA/p-Si structure have been determined by means of capacitance–voltage (C–V) and conductance–voltage (G–V) measurements between 700 kHz and 1·5 MHz and current–voltage (I–V) measurements at 300 K. The diode parameters such as ideality factor, series resistance, barrier height and flat band barrier height were calculated from the forward bias I-V characteristics. In order to explain the electrical characteristics of metal/polimer/semiconductor (MPS) with MA interface, the investigation of interface states density and series resistance from capacitancevoltage (C-V) and conductance-voltage (G-V) characteristics in the MPS structures have been reported. The measurements of C and G were found to be strongly dependent on bias voltage and frequency for Al/MA/p-Si structure. The value of interface state density Dit was calculated. These values of Dit and Rs were responsible for the non-ideal behavior of I-V and C-V characteristics. The I–V, C–V-f and G–V-f characteristics confirm that the parameters like the BH, interface state density (Dit) and series resistance (Rs) of the diode are strongly dependent on the electrical parameters in the MPS structures. 237 (02_PP76) The Effects of Radiation of P3HT:PCBM Based Organic Solar Cells by Using Boric Acid (H3BO3) as Dopant Into PEDOT:PSS Under Gamma Irradiation Özlem Yağci*, Orhan İçelli Yıldız Technical University, Department of Physics, İstanbul, Turkey, ozlmygc@gmail.com In this study we examined effects of radiation in P3HT:PCBM based organic solar cell by using boric acid (H3BO3) as dopant into PEDOT:PSS (Poly(3,4 ethylenedioxy-thiophene) Poly(styrene-sulfonate)) based buffer layer. We fabricated solar cells that have the structure of ITO/PEDOT:PSS:H3BO3/P3HT:PCBM/Al with PEDOT:PSS layers containing various concentrations (0 and 1.25 mg/ml) of H3BO3. The samples were exposed gamma ray source with radiation dose 0 and 40 Gry. Basic electronic characteristics of fabricated solar cells were determined by current-voltage (I-V) measurements. We systematically characterized of PEDOT:PSS:H3BO3 films by TG/DTA and FTIR. 238 (02_PP77) The Investigation of Frequency Dependence of Electrical Parameters of Al/P-Si Structures With 10 Nm Interfacial Bi4ti3o12 Layer Perihan Durmuş1, Şemsettin Altındal1, Mert Yıldırım2 1 2 Physics Department, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey Department of Mechatronics Engineering, Faculty of Enginering, Düzce University, Düzce, Turkey In this study, the frequency and voltage dependence of capacitance-voltage (C- V) and conductance-voltage (G/ω-V) characteristics of the Al/Bi4Ti3O12/p-Si structures were investigated by considering series resistance (Rs) and interface state (Nss) effects in the wide frequency range of 100 Hz-1 MHz. Experimental results confirmed that the main electrical parameters are a strong function of frequency and voltage. The voltage dependent profile of Nss and Rs were obtained using low-high frequency and Nicolian and Brews methods, respectively. Rs and Nss, both, decrease with increasing frequency almost as exponentially. Also, the measured capacitance (Cm) and conductance (Gm/ω) values at high frequency were corrected to eliminate of the Rs effect or obtain the real values of them. Experimental results show that the existence of an interfacial layer and Nss at metal/semiconductor interface and Rs play an important role on the electrical characteristics of the structure. The high values of C and G/ω at low frequencies can be attributed to the charges at traps, surface and dipole polarizations, because at low frequencies; both these charges can easily follow the ac signal and polarization processes occur due to their relaxation time. Keywords: Schottky barrier diodes; Frequency and voltage dependence; Surface states and series resistance; Polarization effect 239 (02_PP78) ZrO2 Thin Films is Grown by RF-Magnetron Sputtering Method at the Different Argon Gas Flow P. Köç1, E. Gür1 and S.Tüzemen1 1 Department of Physics, Atatürk University, Erzurum, Turkey, kocpinarr@hotmail.com In this work, ZrO2 thin films were coated on glass substrate by radio-frequency (RF) magnetron sputtering method. During coated process, we used zirconium metal as the zirconium source, oxygen gas as the oxide source and argon gas that is inert gas as the accelerator gas. Amount of argon gas in the gas mixture was changed to four different amounts such as 5 sccm, 10 sccm, 15 sccm and 20 sccm and analized effect of this change on structural and optical properties. Structural, morphological and chemical characterization of ZrO2 were carried out by X-Ray Difraction (XRD), Atomic Force Microscope (AFM) and Energy Dispersive Spectroscopy (EDAX). In the crystal structure analysis, While we observed peaks belonging to the monoclinic and tetragonal phase at minimum argon gas flow, occurred only peaks of monoclinic phase at greater rates of argon gas. When argon gas flow is increased, surface roughness decreased. The experimental study showed that argon gas flow rate is very effective on the structural, chemical and morphological properties of ZrO2 thın fılms. 240 (02_PP79) Optimization of Substrate Material for Graphene Based Electrochromic Devices P. Köç1 and C. Kocabaş2 1 2 Department of Physic, Atatürk University, Erzurum, Turkey, kocpinarr@hotmail.com Department of Physic, Bilkent University, Ankara, Turkey, ckocabas@fen.bilkent.edu.tr In this work, multi layer graphene samples were synthesized on nickel foils by chemical vapor at constant time. For graphene based flexible electrochromic devices desing, we transfered multilayer graphene thin films on transparent PVC and polythene. Structural, and optical characterization of multilayer graphene thin films were carried out by X-Ray Difraction (XRD), Raman and Fourier Transform Infrared Spectroscopy (FTIR). In the optical analysis,we saw that films thickness increased as parallel to the increasing temperature and transmission properties from % 60 to %25 decrased. The Raman and XRD experimental study showed thatpolythene may the most suitable substrate for graphene based flexible electrochromic devices desing. 241 (02_PP80) Structural, Morphological and Thermal Characterization of Trimethyloctadecylammonium-Bentonite Composites Bülent Çağlar1, Cihan Topcu1, Sema Çağlar1, Mustafa Çaglar2 and Salih Doğan2 1 Department of Chemistry, Arts & Sciences Faculty, Erzincan University, Erzincan,Turkey bcaglar@erzincan.edu.tr, ctopcu@erzincan.edu.tr, scaglar@erzincan.edu.tr, 2 Department of Biology, Arts & Sciences Faculty, Erzincan University, Erzincan,Turkey, mcaglar557@gmail.com, salihdogan@erzincan.edu.tr The modification of Unye bentonite with different amounts trimethyloctadecylammonium (TMODA) cations was verified by powder X-ray diffraction, attenuated total reflection Fourier transform infrared, thermal analysis techniques, scanning electron microscopy and surface area measurement techniques and compared with unmodified bentonite. Intercalation of the TMODA cations into bentonite layers caused a significant increase in the basal spacing values of organobentonites varying in the range of 13.53-20.70 Å that point out the penetration of the surfactant cations into the interlayer space of bentonite. The intercalation of TMODA cations into the smectite layers caused a considerable decrease in the intensities of the bands at 3402 and 1635 cm-1 of sorbed water molecules in parallel with the amount of surfactant. The thermal analysis data showed that the decomposition of surfactant species occurred in the temperature range of 180-500oC and the dehydration amount of adsorbed water gradually decreased with the increasing surfactant amount. The surface areas of organobentonites were found to be much lower than that of raw bentonite and the surface morphology of organobentonites was fluffy. The synthesized orgonomodified clay materials have potential applications in developments of sorbents for removal of organic contaminants from environment, in preparation of polymer nanocomposites, in forthcoming catalysis studies and in other similar industrial applications. Keywords: Organobentonite, intercalation, trimethyloctadecylammonium, X-ray diffraction, thermal analysis. 242 (02_PP81) Pressure-Induced Phase Transition of SnTe: An ab initio Study S. Alptekin Department of Physics, Çankırı Karatekin University, Çankırı, TURKEY, salptekin@karatekin.edu.tr We studied the structural behavior of SnTe under the hydrostatic pressure using a constant pressure ab initio technique and density functional theory with a generalized gradient approximation (GGA). We found SnTe undergoes a structural second order phase transition from the orthorhombic (Pnma) structure to orthorhombic (Cmcm) structure in the constant pressure simulation at 4 GPa which is in good agreement with the recent experimental and theoretical study. The Cmcm structure is fivefold coordinated and layered structure. This phase transition was also calculated using the enthalpy calculations. 243 (02_PP82) A Schottky Diode Type Nitrogen Dioxide Gas Sensor with HfO2 Nanostructures Özlem Barin1, Mehmet Demir1, Irmak Karaduman1, Dilber Esra Yıldız2, Selim Acar1* 1 Department of Physics, Science Faculty, Gazi University, Ankara, Turkey 2 Department of Physics, Hitit University, Corum, Turkey Nitrogen dioxide (NO2) is well known for its role in acid rain generation, as the primary cause of photochemical smog, as a respiratory irritant. NO2 is mainly produced by power plants, combustion engines and automobiles. Concentration of NO2 as low as 5 ppm is known to paralyze the olfactory system preventing the conscious detection of increasing NO2 levels. As such, the detection of NO2 at low concentration is of vital importance to minimize exposure. For this reason, the need for gas sensors suitable for monitoring and control of NO2 has been raised. In the present study we investigated the NO2 gas sensing properties of HfO2/p-Si Schottky diode with different thickness at room temperature with and without the UV-light irradiation. The gas sensing measurements were done in air and air–NO2 mixture under atmospheric conditions in the concentration range of 5-30 ppm by monitoring changes in the sensor resistance. The effect of thickness was examined on response values and response/recovery time of the metal oxide gas sensor. The maximum response was obtained for the thinner interface layer. For repeated UV illumination, the Schottky contact presented stable and recoverable current response. This work is supported by The Scientific and Technological Research Council of Turkey (TUBĠTAK) under Project No, 114F074 and Gazi University Scientific Research Fund under project no 05/2015-09. 244 (02_PP83) H2 Gas Sensing Properties of Silar Deposited Nanocrystalline Nio Thin Films Irmak Karaduman1, Tuğba Çorlu1, Hakan Sürel1,2, Memet Ali Yıldırım3, Aytunç Ateş4, Selim Acar1* 1 Department of Physics, Science Faculty, Gazi University, Ankara, Turkey UNAM-National Nanotechnology Research Center, Bilkent University, Ankara, Turkey 3 Department of Electric Electronics Engineering, Engineering Faculty, Erzincan University, Erzincan, Turkey 4 Department of Material Engineering, Engineering and Natural Sciences Faculty, Yıldırım Beyazıt University, Ankara, Turkey 2 Hydrogen (H2) is a potential fuel for cars, buses, and other vehicles. It is also already used in medicine and space exploration as well as in the production of industrial chemicals and food products. As it is tasteless, colorless and odorless, it cannot be detected by human beings. It is potentially hazardous due to the high possibility of explosion accidents caused by leakage or by human error. Therefore, hydrogen detection is of great importance during its production, storage and use. We deposited NiO nano-composite films on glass substrates using the SILAR method. The gas sensing properties of nanocrystalline NiO thin films have been worked as a function of measurement temperature and gas concentration from 10 ppm to 40 ppm. The maximum response was found 75 % at 200 C for 40 ppm. The gas sensing property demonstrates that as-prepared nanocrystalline NiO thin films have potential applications in the detection of hydrogen. This work is supported by The Scientific and Technological Research Council of Turkey (TUBĠTAK) under Project No, 115M658 and Gazi University Scientific Research Fund under project no 05/2015-09. 245 (02_PP84) Percolation Model in Cation-Deficient Lanthanum Manganites Sevgi Polat Altintaş1, 2 and Cabir Terzioğlu1 1 Department of Physics, Faculty of Arts and Sciences,Abant İzzet Baysal University, 14280 Bolu, Turkey 2 Advanced Materials Group, Department of Mechanical Engineering, Koç University, 34450 İstanbul, Turkey We aim to analyze the deficiency in A-site hole-doped LCMO system by means of X-ray powder diffraction, electrical resistivity and susceptibility measurements. The samples with nominal composition La0.7CaxMnO3−δF2x (x = 0.2 and 0.3) were prepared by solid state reaction method. We have explained directly the electrical transport mechanism of cationic deficient LCMO system in the framework of a percolation theory. By using this model, the electrical resistivity at any temperature between 5 and 300 K for LCMO system is determined by the change of the volume fraction of ferromagnetic (FM) and paramagnetic (PM) phases which satisfy the Boltzmann distribution. 246 (02_PP85) Electiricial Characterization of Sn/InSe:Mn Crystal Grown by Bridgman-Stockbarger Method B. Gürbulak, S. Duman, F. Ş. Özçelik, A. Ashkhasi, M. Şata, S. Yılmaz 1 Atatürk University, Science Faculty, Physics Department, 25240 Erzurum, Turkey gurbulak@atauni.edu.tr, sduman@atauni.edu.tr, fs_ozcelik@hotmail.com, afsoon.ashkhasi@gmail.com, mehmetwsata@hotmail.com, seydayilmaz@windowslive.com In this study, the electrical properties of InSe:Mn semiconductor grown by BridgmanStockbarger method have been examined. The current-voltage (I-V) measurementes of Sn/InSe:Mn Schottky diode have been performed with 20 K increments in the range 140-380 K. The experimental barrier height (BH) decreased while ideality factor (n) increased as the temperature decreased. The experimental values of BH and (n) range from 0.496 eV and 3.926 at 140 K to 1.00 eV and 1.227 at 380 K. This behaviour has been attributed to the barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the metalsemiconductor interface. From the temperature-dependent I–V characteristics of the Sn/InSe:Mn diode, Richardson constant A* has been calculated as 256.53 A / cm 2K2 and 313.33 A / cm2K2from a ln(I0/T2 )-(kT)-1 plot for the two temperature regions. respectively, Keywords: InSe:Mn, layered semiconductor,Schottky diode,ideality factor. 247 (02_PP86) Calculation of Energetics and Electronic Structures of Polymerized Fullerenes Inside CNTs Using DFT Methods S. Üstündağ, S. Berber Gebze Technical University, Kocaeli, Turkey, stas@gtu.edu.tr Discovering fullerenes and carbon nanotubes resulted in large studying areas related them. Researches of polymerized fullerenes, functionalization of nanotubes, nanopeapods are some of the current studies. We performed our calculations by using SIESTA code based on density functional theory (DFT) within the local density approximation (LDA) for the exchangecorrelation functional. For modelling we used (17,0); (18,0) and (19,0) single walled zigzag nanotubes. Depends on the results that fullerenes polymerized by [2+2]-cycloaddition at 9 Ang. distance between the neighboring C60 molecules through z-axis. In respect to electronic band structure, polymer chain has five-fold HOMO states and three-fold LUMO states. With polymerization, band gap decreased about 0.4 eV. Encapsulation of polymerized fullerene chain by nanotubes showed one system has occured that influenced in mechanically but independent electronically. Observed that some degenerate states shifted. Due to the findings, this nanosystem can be used in some applications like sensor, organic electronics and nanodevices. 248 (02_PP87) Frequency and Voltage Dependence Surface States and Series Resistance Profiles in Al/Co3O4-PVA/p-Si Structures from Admittance Measurements Ş. Altındal1, Ç. Bilkan1,2, Y. A. Kalandaragh3 1 Department of Physics, Faculty Sciences, Gazi University, 06500, Ankara, Turkey, Department of Physics, Faculty Sciences, Karatekin University, 18000, Çankırı, Turkey, 3 Department of Physics, University of Mohaghegh Ardabili, P.O. Box 179, Ardabil, Iran 2 Al/Co3O4-PVA/p-Si structures were fabricated and their surface states (Nss) and series resistance (Rs) profiles were obtained using admittance teqnique in the frequency range of 5 kHz-1 MHz at room temperature. Both the value of capacitance (C) and conductance ) decrease with increasing frequency due to the existence of N (G/ss, -V profile has two interfacial layer and surface polarization. The G/ distinctive peaks for each frequency at about 0.9 V and 1.5 V due to the particular density distribution of Nss at p-Si/Co3O4 interface, interfacial layer and Rs of the structure. The magnitude of two peaks increases with decreasing frequency and shift towards negative voltages. Nss-ln (f) profile that obtained from Hill Coleman technique decreases with increasing frequency as exponentially. Voltage dependent profile of Rs data was obtained from C and G/ using Nicollian and Brews technique and it has two peaks and peaks value decreases with increasing frequency. In addition, the concentration of acceptor atoms (NA), Fermi energy level (EF) and barrier height ( C-V)) -2 15 values were obtained from reverse bias C -V plots for each frequency as 1.53x10 cm-3, 0.221 eV and 1.078 eV (at 5kHz) and 1.17x1015cm-3, 0.227 eV and 0.957 eV (at 5kHz), respectively. 249 (02_PP88) Investigation of the Effects of Different Thin Film Deposition Parameters on Electronic Parameters Of In2S3/N-Inp Junctions at Various Temperatures T. Çakıcı and M. Sağlam Department of Physics, Science Faculty, Atatürk University, Erzurum, Turkey tuba.cakici@atauni.edu.tr In this research, we report on the measurement of the current-voltage (I-V) capacitancevoltage (C-V) characteristics two different Au/In2S3/n-InP/In Schottky diodes at various temperatures and in dark condition fabricated by chemically spray pyrolysis process. For this, we initially made ohmic contacts on two pieces n-InP crystals with In metal. Then In2S3 thin films, which are changed deposition parameters, have been directly grown on n-InP substrates by using chemically spray pyrolysis method. The morphology, topology and elemental analysis of In2S3 thin films that is grown different parameters, examined with AFM, SEM and EDX techniques. Then, Au contact metal evaporated on the In2S3 thin films, having two different film deposition parameters. Some temperature dependent electronic parameters of two different In2S3/n-InP junctions extracted to I-V-T and C-V-T curves 250 (02_PP89) The Investigation of Photoconducting Properties of Au/TiO2/n-Si (MIS) Type Photodiode by Using Current-Voltage Characteristics at Room Temperature Y. Şafak Asar1 and Ş. Altındal2 1 Gazi University, Ankara, Turkey, yaseminsafak@gazi.edu.tr 2 Gazi University, Ankara, Turkey, altundal@gazi.edu.tr In this study, the forward and reverse bias current-voltage (I-V) characteristics of the fabricated Au/TiO2/n-Si (MIS) type photodiodes have been investigated in the wide range of illumination intensity at room temperature. The reverse current of the photodiode increases with increasing illumination intensity. Also, the reverse current under a certain illumination is higher than that of the current in dark. This can be an evidence to the good photodiode behavior of the fabricated Au/TiO2/n-Si (MIS) structure. The forward current shows a linear behavior in a wide voltage range in the semi-logarithmic scale, but it deviated from the linearity due to the effect of series resistance of the structure and interfacial TiO 2 insulator layer. While the ideality factor, obtained from the slope of the linear region of the forward bias increases, the values of zero bias barrier height (bo) and series and shunt resistances (Rs and Rsh) decreases almost linearly with the increase of the illumination intensity. The magnitude of the photocurrent was found a power law of illumination intensity as (IP=APm). 251 (02_PP90) The Investigation of Photocapacitor Properties of Au/TiO2/n-Si (MIS) Type Photodiode by Using Impedance Measurements at Room Temperature Y. Şafak Asar1 and Ş. Altındal2 1 Gazi University, Ankara, Turkey, yaseminsafak@gazi.edu.tr 2 Gazi University, Ankara, Turkey, altundal@gazi.edu.tr In this study, the forward and reverse bias -V) of the capacitance and conductance voltage measurements (C-V and G/ fabricated Au/TiO2/n-Si (MIS) type photocapacitor were carried out in the wide range of illumination intensity of 0-100 mW/cm2 at room -V plots have inversion, temperature and 1 MHz. Both the C-V and G/ depletion and accumulation regions like a MIS or MOS type capacitor for each became more effective illumination intensity. The changes in C and G/ especially in the depletion region due to the production of electronhole pairs under illumination effect and the charges at trap states. Some main electrical parameters of the structure such as; the concentration of donor atoms (ND) depletion layer width (WD ) and barrier height (b) were also obtained from the reverse bias C-2 vs V plots for each illumination intensities. The large change or dispersion in main electrical parameters can be attributed to the generation of electron-hole pairs in the junction under illumination and the good light absorption. Experimental results confirm that the fabricated Au/TiO2/n-Si (MIS) type structure can be used as a photocapacitor in optoelectronic applications. 252 (02_PP91) Influence of the Composition of the Metallic Precursor on the Properties of CZTS Thin Film Y. Atasoy1*, M. A. Olğar1, G. Aygün2, L. Özyüzer2, E. Bacaksız1 1 Karadeniz Technical University, Department of Physics, Merkez, 61080, Trabzon, Turkey 2 Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey * yavuzatasoy@ktu.edu.tr Photovoltaic (PV) devices have been attracted much more attention due to increasing energy demand recently. The conversion efficiencies of the thin film solar cells such as Cu(In,Ga)Se2 (CIGS) have already reached over 20 %. However limited reservation and high costs of In and Ga, toxicity of Se restrict the widespread usage of CIGS-based solar cell in PV industry. Cu2ZnSnS4 (CZTS) one of the most promising and alternative material to CIGS due to containing earth abundant and non-toxic material. CZTS is a p-type semiconductor material with 1.4-1.6 eV band gap and high optical absorption coefficient (≥104 cm-1). CZTS have been extensively studied during the last decade and the most commonly have been fabricated using DC magnetron sputtering method. In this study, CZTS thin films were prepared by a two-stage technique: deposition of metallic precursors by DC magnetron sputtering and annealing of these metallic precursors in a sulfur atmosphere above 500 °C using sulfur powder. Compositional analyses were performed by XRF, crystalline structure and phase formation were investigated by XRD and Raman, and the morphological characterization was investigated by SEM. In the present study, effect of the Cu composition on the structural and morphological properties of Zn-rich CZTS thin films were investigated. Keywords: Thin film solar cells, Cu2ZnSnS4 (CZTS) thin film, DC magnetron sputtering, sulfurization 253 (02_PP92) The First-Principles Study of CaS and CaSe in B1 and B2 Structures F. Soyalp 1 and Y. Soyvural 2 1 Yüzüncü Yıl University, Faculty of Education, Theoretical Physics Research Laboratory, Van, Turkey, fsoyalp@yyu.edu.tr 2 Hakkari University, Vocational School of Colemerik, Hakkari, Turkey, y_soyvural@hotmail.com The structural, elastic, electronic and phonon properties of CaS and CaSe compounds in NaCl(B1) and CsCl(B2) structures are studied by performing ab initio calculations within the local density approximation. Bulk properties including lattice constants, static bulk modulus and first-order pressure derivative of the bulk modulus are reported and compared with available experimental and other theoretical results. The elastic constants at any order are defined by the Taylor expansion of the elastic energy or stress in terms of the applied strain. The electronic band structures and the related total density of states are presented. Then a linear-response approach to density functional theory was used to derive the phonon dispersion and the phonon density of states. 254 (02_PP93) Silicon Nanowire-Copper(II) Phthalocyanine Heterojunctions N. Uslu Uzun1, M. F. Genisel2, Y. S. Ocak3 1 Department of Physics, Institute of Natural &Applied Science, Dicle University, Diyarbakır, Turkey nlfruslu@gmail.com 2 Department of Science, Faculty of Education, Dicle University, Diyarbakır, Turkey mfgenisel@dicle.edu.tr 3 Department of Science, Faculty of Education, Dicle University, Diyarbakır, Turkey yusufselim@gmail.com It is well known that interface properties of heterojunctions have a great influence on the performance of devices. To enhance the photovoltaic properties of heterojunctions, increase of pn junction area is one of the most interesting topics. To understand the effect of Si nanowire (Si NW) length on the performance of Copper(II) Phthalocyanine (CuPc) based heterojunctions, vertically aligned Si NW arrays were fabricated using the metal-assisted chemical etching technique. To obtain Si NW arrays, Si wafers were etched in a silver nitrate and hydrofluoric acid based solutions for 5, 10 and 30 min. The morphological properties of Si NW were analyzed scanning electron microscopy (SEM). To obtain CuPc/Si NW heterojunctions, CuPc thin films were deposited on Si NW arrays by means of spin coating method and Ag metal was evaporated on CuPc thin films. One reference sample was also fabricated using a Si wafer without NW arrays. The electrical and photoelectrical parameters of CuPc/Si NW heterojunctions were executed by the help of current-voltage (I-V) measurements in dark and under a solar simulator. 255 (02_PP94) Substrate Temperature Effects on Reactively Sputtered Cr2O3/n-Si Heterojunction Y. S. Ocak1, A. A. Issa2, M. F. Genisel3, A. Tombak4 and T. Kılıçoğlu5 1 Department of Science, Faculty of Education, Dicle University, Diyarbakır, Turkey yusufselim@gmail.com 2 Department of Physics, Institute of Natural &Applied Science, Dicle University, Diyarbakır, Turkey aliohm736@gmail.com 3 Department of Science, Faculty of Education, Dicle University, Diyarbakır, Turkey mfgenisel@dicle.edu.tr 4 Department of Physics, Faculty of Art & Science, Batman University, Batman, Turkey tahmet@yahoo.com 5 Department of Physics, Faculty of Art & Science, Batman University, Batman, Turkey kilicoglutahsin@gmail.com To see the effects of substrate temperature on Cr2O3/n-Si heterojunctions, Cr2O3 thin films were formed on n-Si and glass substrates at 40, 150 and 250 C° by radio frequency (RF) reactive technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr2O3/n-Si thin films were analyzed using UV-vis data. The band gaps of the films were compared. The electrical properties of Cr2O3/n-Si heterojunction were tested by their current voltage (I-V) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr2O3 thin film at 250 °C gave better rectification. The characteristics electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage (C-V) data were compared with the one calculated from I-V measurements. 256 (02_PP95) Schottky Diode Applications of the Fast Green Fcf Organic Material and the Analyze of Solar Cell Characteristic Z. Çaldıran1, Ş. Aydoğan1 and Ü. İncekara2 1 2 Department of Physics, Faculty of Science, Atatürk University, Erzurum, Turkey Department of Biology, Faculty of Science, Atatürk University, Erzurum, Turkey z.caldiran@gmail.com In this study, semiconductor device applications of organic material Fast Green FCF (C37H34N2Na2O10S3Na2) has been investigated. After chemical cleaning process of boron doped p-Si crystals, Al metal was coated on the one surface of crystals by thermal evaporation and fast green organic materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 40 s). Finally, Ni metal was coated on Fast Green by sputtering and we obtained the Ni/Fast Green FCF/n-Si/Al Schottky diode in the fig.1. showing the schematic diagram. We completed the fabrication of rectifying contact and calculated the basic diode parameters of device with current-voltage (I-V) and CapacitanceVoltage (C-V) measurements at the room temperature. We calculated the ideality factory (n), barrier height (Φb) of rectifier contact from I-V measurements using thermionic emission methods. We calculated ideality factory (n), barrier height (Φb) and series resistance (Rs) of device using Cheung and Norde functions. The diffusion potential, barrier height, Fermi energy level and donor concentration parameters were determined from the linear 1/C2 -V curves with reverse bias room temperature and differences frequency. Further we measured the currentvoltage (I-V) at under light and we analyzed the characteristic of the solar cell device. Acknowledgement: The financial support from Atatürk University Scientific Research Project Council (Project no: 2014/181) is gratefully acknowledged. 257 (02_PP96) Electrical Characterization of the Tio2/P-Si Heterojunction Device Z. Çaldıran1, M. Yılmaz2 and Ş. Aydoğan1 1 Department of Physics, Faculty of Science, Atatürk University, Erzurum, Turkey 2 Advanced Materials Research Laboratory, Department of Nanoscience and Nanoengineering, Graduate School of Natural and Applied Sciences, University of Atatürk, Erzurum, Turkey z.caldiran@gmail.com TiO2 is a material having high strength, light weight, corrosion and heat resistant. Therefore, TiO2 has a wide range of applications such as semiconductor devices. In this study, TiO2 film was coated by sputtering method on a p-Si semiconductor, grown in accordance with (100) orientation had thickness of 400 μm and a resistivity of 1-10 Ω/cm. We investigate the electrical characterization of the TiO2/pSi heterojunction device with current–voltage (I–V) and capacitance–voltage (C-V) measurement at room temperature. Firstly, the current–voltage (I-V) of device was measured and then evaluated from the linear I-V curve with forward bias. We calculated the ideality factory (n) and barrier height (Φb) parameters by the conventional method. Furthermore, we calculated the ideality factory (n), barrier height (Φb) of heterojunction device using Norde and Cheung functions. Secondly, Basic parameters such as diffusion potential, barrier height, Fermi energy level and donor concentration of the heterojunction device were calculated with capacitance-voltage (C-V) measurements, the parameters were determined at 100 kHz-1000 kHz frequency. Fig.1: The linear I–V characteristics of the TiO2/p-Si heterojunction device Acknowledgement: The financial support from Atatürk University Scientific Research Project Council (Project no: 2014/181) is gratefully acknowledged. 258 (02_PP97) The Electrical Characteristics of the Nio/P-Si Junctions Z. Çaldıran1, M. Yılmaz2, Y. Şahin1, L. B. Taşyürek3 and Ş. Aydoğan1 1 Department of Physics, Faculty of Science, Atatürk University, Erzurum, Turkey 2 Advanced Materials Research Laboratory, Department of Nanoscience and Nanoengineering, Graduate School of Natural and Applied Sciences, Atatürk University, 25240, Erzurum, Turkey 3 Darende Bekir Ilıcak Vocational School, İnönü University, Malatya, Turkey z.caldiran@gmail.com In this work, the semiconductor device applications of NiO were investigated. After chemical cleaning process, back contact of p-Si crystals on the lusterless surface was enlarged with the NiO by sputtering method. We have completed the fabrication of heterojunction devices and calculated the basic diode parameters with current-voltage (I-V) measurements at the room temperature for several different devices. We analyzed linear flat bias of best current–voltage (I-V) curve from the current– voltage measurement of devices. We calculated the ideality factory (n), barrier height (Φb) of device from I-V measurements using thermionic emission (TE) methods. Furthermore, we calculated ideality factory (n), barrier height (Φb) and series resistance (Rs) of device using different methods as Cheung and Norde functions. We determined that each of them had this characteristic parameters of different devices when analyzed values. Acknowledgement: The financial support from Atatürk University Scientific Research Project Council (Project no: 2014/181) is gratefully acknowledged. 259 (02_PP98) Characterization of Al Doped WO Thin Films Deposited by the Spray Pyrolysis Method Z. Orhan1, A. Taşer2, O. Özakın3, B. Güzeldir4 and M. Sağlam5 1 Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey, zorhan87@gmail.com 2 Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey, ahmettaser25@gmail.com 3 Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey, oguzhanozakin@atauni.edu.tr 4 Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey, bguzeldir@atauni.edu.tr 5 Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey, msaglam@atauni.edu.tr In this study, undoped and Al doped tungsten oxide thin films were deposited by spray pyrolysis method. The influence of doping on optical, structural and morphological properties of thin films were investigated. The band gap energy values of thin films were determined with the help of the optical absorption spectra. The SEM and XRD studies showed that films are covered well with glass and exhibit polycrystalline characterization. SEM images of Al doped WO films showed the morphology and grain size and grain distribution of WO depend on Al dopant content. 260 (02_PP99) Life Time Measurement of Thin Film Silicon Solar Cells and Aging Effect Zeynep Elif Özerbaş1, Fırat Es 2, 3, Raşit Turan2, 3, Hasan Efeoğlu1, 4, 5 1,3 Department of Nanoscience & Nanoengineering, Atatürk University, Erzurum, Turkey 2 Faculty of Science, Department of Physics, 3Centre for Solar Energy Research and Applications (GÜNAM), Middle East Technical University, Ankara, Turkey 4 Department of Electrical & Electronics Engineering, 5 Nanoscience-Nanoengineering and Research Application Centre Atatürk University, Erzurum, Turkey Silicon based thin film technology for solar application are used widely. The quality requirement for efficiency is one of the key factor. Base material is one of the key factor for lower cost without loosing performance. However, the most important issue is the advances in efficiency. On that manner life time is a key factor. In general average life time of a wafer is used for characterisation but two dimensional mapping much useful for checking substrate, coated thin film and junction uniformity. In that research two dimensional fife time measurements are carried out using low current injection conditions. Designed hardware for life time measurement has capability to measure life time down to microsecond range. Due to temperature sensitivity, all of the measurements are carried out in a liquid nitrogen cryostat with a laser pulse with micro second duration. Open voltage has dependence to light intensity level was stable up to 30 min. measurement period, that solar cell efficiency can be measured with high accuracy. Initial life time at first measurement was 0.705 msec and this value decreased to 0.689 msec. Degradation per second found to be 7.98 usec. This clearly shows that the first illumination triggering degradation and this reduction to be continued until stabilization. Time period for stabilization require longer measurement time period. The reason behind degradation need further study on solar cell with its electrical and optical properties. This work financially supported by The Scientific and Technology Research Council of Turkey, Grant No. 114F082 261 (02_PP100) Variations in the Raman and Transmission Spectrum as a Function of the Number of Graphene Layers P. Köç1, C. Kocabaş2 and S. Tüzemen1 1 Department of Physics, Atatürk University, Erzurum, Turkey, kocpinarr@hotmail.com Department of Physics, Atatürk University, Erzurum, Turkey,stuzemen@atauni.edu.tr 2 Department of Physics, Bilkent University, Ankara, Turkey, ckocabas@fen.bilkent.edu.tr 1 In this study, We studied variations in the Raman and transmission spectrum as a function of the number of graphene layers by using snom+Confocal Raman microscopy and Fourier Transform Infrared Spectroscopy (FTIR).Single layer graphene samples were synthesized on cupper foils by chemical vapor deposition at 1035 C at constant time. For single, two and three layers graphene on glass, Raman G band (~1591 cmˉ¹ ), G band (~2450 cmˉ¹) and 2D (~2677 cmˉ¹) band varied as functions of the number of graphene layers. Also optical transmittance spectra were showed that optical transmission changed between (~ % 97,4 - % 92,7). We obtained that sheet resistance decreases as the number of layers increases from 1 to 3. 262 (02_PP101) Pressure Induced Phase Transition of BaSe : An ab initio Study Sebahaddin Alptekin Department Of Physics, Çankırı Karatekin University, Çankırı, 18100, Turkey A constant pressure ab initio MD technique and density functional theory with a generalized gradient approximation (GGA) was used to study the pressure-induced phase transition of BaSe. We found BaSe undergoes a structural first-order phase transition NaCl-type (B1) to CsCl-type (B2) structure in the constant pressure molecular dynamics simulation at 75 GPa. These phase transformations were also calculated using the enthalpy calculations. Our transition phases, lattice parameters and bulk properties we attained are comparable with experimental and theoretical data. 263 (02_PP102) Effects of the γ- Radiation on the Electrical Characteristics of the Au/n-Si/Au-Sb Schottky Diode Maryam Abdolahpour Salari, Elvan Şenarslan, Betül Güzeldir and Mustafa Sağlam Department of Physics, Science Faculty, Atatürk University, 25240, Erzurum, Turkey In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diodes at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by evaporation Au metal diameter of about 1.0 mm to the other surface of n-Si in turbo molecular pump at about 10-7 Torr. The I–V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C– V measurements were performed with HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark. Then, this diode was subjected to γ-radiation, and I-V and C-V measurements were taken again. Consequently, examines the difference between these two measurements. 264 (02_PP103) Growth of Graphene Based ZnO Nanowire Structures and Production of Dye Sensitized Solar Cells by Hydrothermal Method Duygu Orhan1, Gülin Birim2, Mansur Aşgın3, Oğuzcan Özer4, Bayram Kılıç5 1 Yalova University, Department of Energy Systems Engineering, Yalova, Turkey, duyguorhan20@gmail.com 2 Yalova University, Department of Energy Systems Engineering, Yalova, Turkey, gulinbirim@gmail.com 3 Yalova University, Department of Energy Systems Engineering, Yalova, Turkey, mansurasgin@gmail.com 4 Yalova University, Department of Energy Systems Engineering, Yalova, Turkey, oguzcanozer@gmail.com 5 Yalova University, Department of Energy Systems Engineering, Yalova, Turkey, bkilic@yalova.edu.tr In this study, grafen coated FTO (fluorine doped tin oxide), ZnO nanostructures on the glass is produced by hydrothermal method. Nanowire structure is provided with ammonia at pH = 11 value. Later, resulting nano-wire structure's superficially, structural and electrical characterizations were examined. The results showed us that, ZnO nanowires on graphene nano-layer of the (002) orientation were obtained in high crystal quality from XRD (X-ray diffraction spectroscopy) characterization, ZnO nano-wire is 30-50 nm Radius from measurement of SEM (scanning electron microscope) and it achieved a rate of 83% Zn and 17% O2 from EDAX measurement. Solar energy conversion efficiency were studied depending on the surface morphology of the ZnO nanostructures. ZnO nano-wires that have a high yield is shown. 265 POSTER SESSIONS 03_ Nuclear Physics and Nuclear Energy 266 (03_PP01) Development and Productıon of High Temperature Resistant New Heavy Armor Concrete Materials Against Nuclear Applications Fast Neutron and Gamma Radiation Leaks Occurring During by Experiments and Cern-Fluka Monte Carlo Simulation Code Geant4 and Winxcom* Bünyamin Aygün1, Turgay Korkut2, Abdulhalik Karabulut1 1 Atatürk University Faculty of Science, Department of Physics, Erzurum, Turkey, baygun25@hotmail.com , akara@atauni.edu.tr 2 Sinop University of Nuclear Power Engineering. Sinop, Turkey, turgaykorkut@hotmail.com In this study, high performance, heavy concretes obtained is used as a shielding to avoid radiation in nuclear plants, in the shelters, build against nuclear war possibility and in the walls of radiology and oncology department in medical field. Boron (B) and Boron carbide were used (B4C) not to pass through X and γ- rays, Datolite (CaBSiO4(OH)), barite (BaSO4), bauxite (Al2O3 50% 55% SiO2 5% 7% Fe2O3 20% 25%) and galena (PbS) neutron particles used. Previously, a study was thought obtain of concretes as a theoretician. As take into consideration concrete mixture rules, concentration quantities of chemical compounds of aggregate, cement and water in concrete was determined using Geant4 Monte Carlo code and WinXCom program at certain energy cross sections, densities, neutron captures and gamma mass reduction (absorption) coefficients for each one. According to theoretic results, for concretes have good absorption was passed to experimental step. Then, it is investigated effects of sample's boron and boron carbide contents on fast neutron and gamma shielding capabilities of samples. As a conclusion, fast neutronand gamma radiation shielding hight capacity of samples were produced. *This study was supported by Atatürk University Scientific Research Project (BAP2014/712015/86). The authors thank to Atatürk University. 267 (03_PP02) The Variation of Mass Attenuation Coefficient throughout the HPGe Detector Surface A. Çelik1, A. Çiriş2 and U. Çevik3 1 Department of Physics, Giresun University, Giresun, Turkey, ahmet.celik@giresun.edu.tr 2 Department of Physics, Karadeniz Technical University, Trabzon, Turkey, aliciris@ktu.edu.tr 3 Department of Physics, Karadeniz Technical University, Trabzon, Turkey, ugurc@ktu.edu.tr This study reported the mass attenuation coefficient anomalous for zinc element throughout the front surface of p-type coaxial High Purity Germanium (HPGe) detector. The experimental studies were carried out in two steps. In the first step, the front surface of detector was scanned to determine the location (and hence symmetry axis) of HPGe crystal in the geometry by using the collimated beams of 661 keV energy from a 137Cs radioactive point source. In the second step, the mass attenuation coefficients were measured along the symmetry axis for 1 mm thick zinc at 661 keV. It was observed that mass attenuation coefficient values ranged from 0.051 cm2/g to 0.072 cm2/g. 268 (03_PP03) Radioactivity Concentration Measurements in Lichen and Moss Samples Collected from the Giresun Province of Northeastern Turkey B. Ertuğral1, A. Çelik2, B. Koz3, N. Özalp4 and S. Yüksel5 1 Giresun University, Giresun, Turkey, birol.ertugral@giresun.edu.tr Giresun University, Giresun, Turkey, ahmet.celik@giresun.edu.tr 3 Giresun University, Giresun, Turkey, bahadir.koz@giresun.edu.tr 4 Giresun University, Giresun, Turkey, nefise_aksoy_34@hotmail.com 5 Giresun University, Giresun, Turkey, snyyuksel@gmail.com 2 Mosses and lichens have been widely used as biomonitors for assessing the atmospheric deposition of radionuclides of both natural and artificial origin. About twenty-nine years after the Chernobly accident, 137Cs and the other radionuclides concentration measurements using gamma-ray spectroscopy equipped with a High Purity Germanium (HPGe) detector were performed in lichen and moss samples collected from the Giresun province of northeastern Turkey. The gamma activity result showed that 137Cs, an artificial radionuclide released from the Chernobly power plant accident, is still eminent in the environment of the province. It was observed that activity concentrations of 137Cs and 40K ranged from 16 to 154 Bq kg-1 and from 77 to 668 Bq kg-1 for lichen samples and ranged from 41 to 201 Bq kg-1 and from 169 to 1055 Bq kg-1 for moss samples, respectively. 269 (03_PP04) Indoor Radon Measurements in Erzurum Province of Turkey R. Durak, D. Kıran, N. Ekinci, E. Kavaz Atatürk University, Erzurum, Trımğd, e-mail adress:esrakvz@gmail.com Indoor radon measurements were carried out on dwellings in Erzurum province during the winter months of February 2012 to early April 2012 and the summer months of July 2012 to early September 2012. Nuclear track detector LR-115 was used for the measurements. According to the results of the investigations, it was understood that the indoor radon concentration averages in dwellings are in the range of 11 ± 6 Bq m -3 - 380 ± 91 Bq m-3 in winter season and 8 ± 3 Bq m-3 - 356 ± 64 Bq m-3 in summer season. We found that the 222 Rn effective dose values in the studied dwellings in winter season range from 0.278 to 9.59 mSv y-1. Also, the 222Rn effective dose values in the studied dwellings in summer season range from 0.202 to 8.98 mSv y-1. These values are within the ICPR recommended values. Although the radon activity has not been found to vary with seasonal changes; it does varies with the age, the construction mode of houses, the ventilation conditions and with specific sites and geological materials. Keywords: Radon, radiation, LR-115 nuclear trace detector 270 (03_PP05) The Effect of Gamma Strength Functions to (γ,xn) Excitation Functions in Some Nuclei Nurdan Karpuz1, Betül Çetin2 1 Amasya University, Amasya, Turkey, nurdankarpuz@amasya.edu.tr (11 pt, italic) 2 Amasya University, Amasya, Turkey, betul.cetin@amasya.edu.tr (11 pt, italic) Photonuclear reactions play an important role in many different subfields of nuclear astrophysics, and such as nucleosynthesis applications. However photonuclear reaction cross sections, especially photoneutron reaction cross sections are the fundamental properties in nuclear systems. And the effects of gamma strength function are also mentioned in the exchange of cross section data. For this purpose, in this study, the effects of gamma strength functions were investigated in photoneutron reaction cross sections in some nuclei. The Monte Carlo simulation code, nuclear reaction code TALYS 1.6 was used for calculations. The obtained cross sections have been compared with the each other and experimental Nuclear Reaction Data (EXFOR-Experimental Nuclear Reaction Data). *This work has been supported with Amasya University FMB-BAP 15-0132 number of project. 271 (03_PP06) Improvement of Semi-Empirical Mass Formula Parameters S. Akkoyun1, T. Bayram2 1 Faculty of Science, Department od Physics, Cumhuriyet University, Sivas, Turkey, serkan.akkoyun@gmail.com 2 Department of Nuclear Energy Engineering, Sinop University, Sinop, turkey, t.bayram@ymail.com The atomic nuclei which is the main motivation of the nuclear physics study is composed of the proton and neutrons. In the liquid drop model of the nuclei, the binding energies of the nuclei are obtained by using a semi-empirical mass formula formulated by Weizsacker in 1935. The coefficients determined by fit process on experimentally obtained atomic binding energies are updated and improved since 1935 by using several mathematical methods. In this study, the coefficients in the semi-empirical formula are aimed to determine with high accuracy by using artificial neural network method. According to the preliminary results, the coefficient is appropriated to the literature values. 272 (03_PP07) Removal and Recovery of Some Radionuclides from Simulated Nuclear Waste Using Amberlite XAD-16-Pyridylazo Resorcinol Composite S. Akçağlar Dokuz Eylül University, Engineering Faculty, Mechanical Engineering Department, İzmir, Turkey, sevil.akcaglar@deu.edu.tr In this study, Amberlite XAD-16-pyridylazo resorcinol composites were developed under laboratory conditions to detect the removals and recoveries of U(VI) and Am(III) from simulated nuclear wastes by adsorption and desorption processes. The effects of contacting time (5, 15, 25, 200 min), of Amberlite XAD- 16-pyridylazo resorcinol composite concentrations (5, 25, 50 and 100 mg/l), of temperatures (15, 30 and 45o C), and pH levels (acidic, basic and neutral conditions) on the removals and recoveries of U(VI) and Am(III) radionuclides were investigated. The data obtained showed that the maximum adsorption yields of U(VI) and Am(III) were found to be 96% and 95%, respectively, after 25 min. using 25 mg/l Amberlite XAD-16-pyridylazo resorcinol composite at 30o C at a basic pH. FTIR analysis showed the various characteristic functional groups such as -N=O-, -C—N- and -OH- stretching bonds and —N=N— bending bonds. The adsorption kinetic of radionuclides to Amberlite XAD-16-pyridylazo resorcinol isotherm was in accordance with Langmuir. The Amberlite XAD-16-pyridylazo resorcinol can be reused and can be used again. The regeneration of the composite is possible and can be attained a desorption efficiency of 99% using 0.4 M HNO3 acid solution from 15 mg/l prepared Amberlite XAD-16-pyridylazo resorcinol composite. 273 (03_PP08) Separation of Zirconium and Hafnium Tetrachloride from the Nuclear Power Reactors Using an Distillation Column with an Extraction and Optimized NaCl-KCl Salt Mixtures Levels for a Green Environment S. Akçağlar Dokuz Eylül University, Engineering Faculty, Mechanical Engineering Department, İzmir, Turkey, sevil.akcaglar@deu.edu.tr In this study, in order to remove the zirconium tetrachloride (ZrCl4) and hafnium tetrachloride (HfCl4) from nuclear power reactors a distillation column with extraction was used at optimum NaCl-KCl salt mixture to built up a suitable vapor - liquid phase in the nuclear reactor. The effects of tetrachloride concentrations (10%, 35%, 65%), the effects of NaCl-KCl salt mixture concentrations (1:10, 3:20, 8:30 M), temperatures (100 oC, 200 oC and 400 oC,) and pressures ( 400 mm Hg, 600, 800 and 1200 mm Hg) on the removal of zirconium was investigated. The bottom stream with high purity ZrCl4 molten salt was run through a stripper column to collect ZrCl4 as a solid product and the solvent salt was returned to the feed storage. The HfCl4-rich liquid comes off the overhead stream and is then collected in a HfCl4 stripper unit to obtain the salt-free HfCl4. Under optimized conditions (36% mol tetrachloride (ZrCl4-HfCl4) concentration, NaCl-KCl salt mixture of 8:30 M, a temperature of 200 oC and a pressure of 1200 mm Hg) 80% ZrCl4 recovery was observed. Distillation column with extraction using a proper molten salt system from obtaining ultra-purified Zr separation for nuclear power reactors. 274 POSTER SESSIONS 08_ Applied Physics 275 (08_PP01) Fabrication of Bright Blue, Green and Red Polymer Light Emitting Diodes on Pixelated Transparent Electrode A. Baltakesmez1,2and S. Tüzemen1 1 Atatürk University, Science Faculty, Physicss Department, Erzurum, Turkey, baltakesmez@atauni.edu.tr stuzemen@atauni.edu.tr 2 Çankırı Karatekin University, Çankırı, Turkey, baltakesmez@atauni.edu.tr Here, we reported the fabrication and electroluminescence (EL) characterization of electron transport layer-free polymer light emitting diodes used red, green and blue spiro-copolymer as the emitter in a device structure of glass/pixelated ITO/Pedot:PSS/emitter/LiF/Al. Hole transport layer (Pedot:PSS) and emitter layer were coated from solution by spin coatering technique. The EL and optical properties are investigated by using USB4000 and UV-visible spectrometer, respectively. Additionally, the current-voltage measurement was carried out using a Keithley 2400 sourcemeter inside the glovebox. The EL spectra of the devices exhibited maximum EL emission wavelengths at 482, 519, and 625 nm for blue, green, and red colors, respectively. 276 (08_PP02) Effect of Annealing on Photovoltaic Performance of Fabricated Planar OrganicInorganic Perovskite Solar Cells A. Baltakesmez1,2, M. Biber1 and S. Tüzemen1 1 Atatürk University, Science Faculty, Physics Department, Erzurum, Turkey, baltakesmez@atauni.edu.tr mehbib@atauni.edu.tr stuzemen@atauni.edu.tr 2 Çankırı Karatekin University, Çankırı, Turkey, baltakesmez@atauni.edu.tr We fabricated planar perovskite solar cells used CH3NH3PbI3-xClx for light harvesting to investigate effect of annealing on photovoltaic performance of fabricated device. The devices have an architecture of Glass/ITO/Pedot:PSS/perovskite/PCBM/Al. Layers of hole transport (Pedot:PSS), active and electron transport (PCBM) were prepared from solution based one step deposition method by a spin coater and standard annealing procedure. The current−voltage curves of devices were measured inside the glovebox using a Keithley 2400 sourcemeter. The cells were illuminated by a solar simulator have optical intensity value of 300 mW/cm2. For the best cells, while PCE value of %5.78 before the annealing, photovoltaic performance were improved average %11 delivered a short-circuit current density of 3.43 mA/cm2, Voc of 0.84 V, and fill factor (FF) of 0.74, leading to an efficiency of %6.31with respect to prior to annealing. 277 (08_PP03) Exchange Bias: The Key Ingredient for Nanomagnetic-Bio-Sensors K. Yıldız, M. Ertaş, B. Kocaman, L. C. Arslan, Ali C. Başaran and B. Aktaş Gebze Technical University, Physics Department, 41400 Gebze Kocaeli, Turkey Developing nanomagnetic-bio-sensors is a demanding task in the field of spintronics. It requires a combination of multidisciplinary research for both applied and scientific interest. One of the key elements for these kinds of sensors is called exchange bias that provides a unique property helps to induce a selective detection. In this poster presentation, we will explain our approach to establish magneto-resistive sensors based on exchange bias effect. We will include our initial results on a ferromagnetic/non-magnetic/ferromagnetic multilayered thin film which does not include a grown antiferromagnetic layer. The exchange bias in these films is obtained by naturally oxidation of a ferromagnetic layer. We investigated the structural, magnetic, and electrical properties and will present detailed analysis of these multilayered structures. These structures need to be improved in order to be used in sensor applications. We will explain how these can be combined with bio functionalization and used as a biosensor. This study is supported by the The Scientific and Technological Research Council of Turkey (TUBITAK) under Grant No. 114F359. 278 (08_PP04) Magnetic Properties of Fe/SiO2/Ni and Fe/SiO2/Co Thin Film Structures F. Ay1, A. C. Başaran1, B. Aktaş1, A. Yu Goikhman2, G. S. Kupriyanova2, B. Z. Rameev1,3, 1 Department of Physics,Gebze Technical University, Gebze-Kocaeli,Turkey, ayfigen@gmail.com 2 Immanuel Kant Baltic Federal University, Kaliningrad, Russia 3 Kazan Physical-Technical Institute of RAS, Kazan, Russian Federation, rameev@gyte.edu.tr Magnetic multilayer thin films have attracted considerable attention due to applications in magnetic sensors, read heads of HDDs, magnetic random access memories and other spintronic devices. In this work the samples of Si/SiO2//Fe/SiO2/Ni and Si/SiO2//Fe/SiO2/Co layers have been prepared by two-stage deposition process. At the first stage, Fe layer and SiO2 interlayer of both samples have been grown by ion beam deposition technique at room temperature. Then, the sample have been taken out to ambient atmosphere and loaded into the chamber of pulse laser deposition facility. Prior to the deposition of the top layer the samples have been cleaned by annealing at 1500C to prevent pollution. At the second stage, Ni (or Co) layers have been prepared by pulse laser deposition technique (PLD) at room temperature. The thickness of deposited layers have been measured by Rutherford back scattering (RBS). Magnetic properties of ferromagnetic bilayers have been investigated by room-temperature ferromagnetic resonance (FMR) and Vibrating Sample Magnetometer (VSM). Magnetotransport measurements at various temperatures have been also performed. Authors thanks for partial support the TÜBITAK projects No. 114F359 and TÜBITAK / RFBR project No. 213M524 / 14-02-91374_ст-а. 279 (08_PP05) First Principles Study of Magnetic, Charge, and Orbital Ordering in Lufe2o4 H. Si Abdelkader*, A. Mahmoudi, H.I. Faraoun, G. Merad Laboratory of Materials Discovery, Unit of Research Materials and Renewable Energies, LEPM-URMER, University of Tlemcen - Algeria. *hayet.siabdelkader@mail.univ-tlemcen.dz We present a computational study to investigate the magnetic, charge, and orbital ordering of LuFe2O4. The calculations are performed with first-principles density functional theory as implemented in the pseudopotential and the full-potential linearized-augmented plane-wave approaches. We have carried out calculations for paramagnetic, ferromagnetic, ferrimagnetic and antiferromagnetic configurations. The calculations give ferrimagnetic ordering as the most favored one, in agreement with experiments. Keywords. First-principles calculations, LuFe2O4, Charge–orbital ordering, Magnetic ordering. 280 (08_PP06) A Comprehensive Study on Dielectric Properties of Volcanic Rock/PANI Composites M. Kılıç, Y. Karabul, M. Okutan and O. İçelli Yıldız Technical University, İstanbul, Turkey, oicelli@yildiz.edu.tr Basalt is a very common volcanic rock that is dark colored and relatively rich in iron and magnesium almost located each country in the world. These rocks have been used in the refused rock industry, to produce building tiles, construction industrial, highway engineering. Powders and fibers of basalt rocks are widely used of radiation shielding, thermal stability, heat and sound insulation. This study examined three different basalt samples (coded KYZ13, KYZ24 and CM1) collected from different regions of Van province in Turkey. Polyaniline (PANI) is one of the representative conductive polymers due to its fine environmental stability, huge electrical conductivity, as well as comparatively low cost. Also, the electrical and thermal properties of polymer composites containing PANI have been widely studied. The dielectric properties of Basalt/Polyaniline composites in different concentrations (10, 25, 50 wt% PANI) have been investigated by dielectric spectroscopy method at the room temperature. The dielectric parameters (dielectric constants, loss and strength) were measured in the frequency range of 100 Hz-106 Hz at room temperature. The electrical mechanism change with PANI dopant. A detailed dielectrically analysis of these composites will be presented. 281 (08_PP07) Cholesteric Liquid Crystals as Temperature Indicators R. Karapinar Yüzüncü Yıl University, Van, Turkey, rkarapinar@yyu.edu.tr Cholesteric liquid crystals (CLCs) are materials that change their reflected colour as a function of temperature when illuminated by white light. CLCs contain molecules aligned in layers rotated with respect to one another. In this helical structure the director which shows the average orientation of the molecules is not constant, but it rotates along the helix axis which is perpendicular the director. The rotation angle from one layer to the next increases with temperature, so the distance between layers with the same orientation, called the pitch, decreases with temperature. This helical structure selectively reflects light. Recently, CLCs have much interest because of their optical properties such as selective reflection. These materials have been used in various optical devices such as reflective CLC displays. Thin CLC films have also been used as indicators of temperatures. In this study light reflection mechanism as a function of temperature of a CLC film is discussed. 282 (08_PP08) Optimization of Coating Parameters of Pedot: PSS Transparent Conductor Polymer for Optoelectronic Applications Z. Orhan1, A. Baltakesmez1,2 and M. Biber1 1 Atatürk University, Erzurum, Turkey, zy.orhan@gmail.com baltakesmez@atauni.edu.tr mehbib@atauni.edu.tr 2 Çankırı Karatekin University, Çankırı, Turkey, baltakesmez@atauni.edu.tr In this study which concerned with optimization of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (Pedot:PSS) (Clevios™ PH500) thin film as using transparent conductor polymer in the organic based optoelectronic applications have been investigated optimum coating parameters by spin coating. The optimization of different spin coating parameters such as spin speed, annealing temperature or time and substrate temperature have been systematically studied by using the solution of dimethyl sulfoxide (DMSO) doped Pedot:PSS (5 vol%) coated on cleaned soda-lime glass substrate in the 1000-class clean room. The electrical and optical measurements were carried out by four point probe, 3D Profilometer and UV-visible spectrometer. It has been found that DMSO, annealing temperature and time is very important for increase of conductivity in the thin film. The optimum thin films exhibited the lowest resistivity value of 3.4x10−3 Ω cm and the highest optical transmittance value of 96.7%. Acknowledgement: The financial support by Scientific and Technological Research Council of Turkey (Project no: 212T012) is gratefully acknowledged. 283 POSTER SESSIONS 09_ Biophysics and Medical Physics 284 (09_PP01) Image Guided Radiotherapy (IGRT) Comparison between ConeBeam CT and Ultrasound System for Prostate Cancer B. Taş1, 2, İ. F. Durmuş1, S. Tokdemir Öztürk2 1 Department of Radiation Oncology, Yeni Yüzyıl University Gaziosmanpasa Hospital, İstanbul,Turkey Bora_tash @yahoo.com 2 Department of Physics, Gebze Technical University, Kocaeli, Turkey Purpose:To evaluate two different Image Guided RadioTherapy(IGRT) methods during 38 fractions of prostate cancer patient’s treatment. Methods:Prostate cancer patient was scanned 3.0mm width by Siemens Biograph mCT and Elekta Clarity® Ultrasound system with transabdominal probe.Critical organs and targets determined from fusion of these images on the CT data set.Volumetric modulated arc therapy (VMAT) planning performed by Monaco 5.1® treatment planning system. Reference images of CT scan and ultrasound images were sent to Elekta Versa HD lineer accelerator’s treatment system.Before the prostate cancer patient’s treatment,we had scanned prostate localization by Elekta Clarity® Ultrasound system.Then we compared ultrasound images with reference images and we adjusted position of couch.For checking the localization of prostate, we scanned patient by XVI 4.5. ConeBeam CT system and we determined the differences between Ultrasound scan and ConeBeam CT scan during 38 fraction of treatment. Results:We determined the difference between Ultrasound scan and ConeBeam CT scan an average 2.8mm lateral direction, 2.9mm longitudinal direction and 2.6mm vertical direction during 38 fractions of treatment. Conclusion:The results show that comparison between Clarity® Ultrasound system and ConeBeam CT system less than 3.0mm in three direction.Therefore, we are treating prostate cancer patient with ultrasound IGRT method instead of ConeBeam CT scan method in our clinic. 285 (09_PP02) Comparison Between FFF Beams and FF Beams for Early Stage Breast Cancer’s IMRT Treatment B. Tas1,2, I.F. Durmus1 , S. Tokdemir Ozturk2 1 Department of Radiation Oncology, Yeni Yüzyıl University Gaziosmanpasa Hospital, İstanbul,Turkey, bora_tash @yahoo.com ifarukdurmus@gmail.com 2 Department of Physics, Gebze Technical University, Kocaeli,Turkey sozturk@gtu.edu.tr Purpose:To evaluate monitor unit(MU)s and treatment delivery time for flattening filter free(FFF) beams and flattening filter(FF) beams while planning early stage breast cancer patient’s intensity modulated radiotherapy(IMRT) treatment. Methods:Nine early stage breast cancer patients treatment planning calculated using Monaco 5.1® with eight FF beams for IMRT treatment. All patients were planned simultaneously integrated boost(SIB) technique and all plans were normalized 60Gy dose to the 95% of tumor bed and breast dose was 50Gy. All plans were reoptimized with FFF beams using the same optimization parameters. 6MV FFF beam had got maximum dose rate 1800 MU/minute and 6MV FF beams had got maximum dose rate 600 MU/minute. We compared MUs and total delivery time for both plans. Results:We determined an average MUs difference with FFF beams %12 more than FF beams and an average total delivery time difference with FFF beams %2 more than FF beams for early stage breast cancer patient’s IMRT planning. Conclusion:The results show that IMRT plans with FFF beams are not decreasing total delivery time for early stage breast cancer patients because of large field size however high dose rate. Therefore, we are treating early stage breast cancer patient’s IMRT plan with FF beams in our clinic. 286 (09_PP03) The Study of the Electron Densities of Some Food Products for Different Drying Technics Emine Nuroğlu1, Sezgin Bakırdere2, Orhan İçelli3 1Doctorate student at Yıldız Technical University, İstanbul, Turkey, uzm.emine.korkmaz@gmail.com 2Department of Chemistry, Faculty of Arts and Sciences, Yıldız Technical University, İstanbul, Turkey, bsezgin23@yahoo.com 3Department of Physics, Faculty of Arts and Sciences, Yıldız Technical University, İstanbul, Turkey, oicelli@yildiz.edu.tr Goal of this study was to determine the concentration of P, S, Cl, K, Ca and Sr in dried foods using different methods to find the electron densities. The methods applied to samples were ―drying in oven under the magnetic field‖ and ―drying under the sun and the magnetic field‖. Concentrations of elements have been determined by Energy Dispersive X-Ray Fluorescence Spectrometer (EDXRF) soon after initial processing of dry foods. The concentrations of elements have been acquired as mg/kg. Afterwards, electron densities of dry foods have been identified by using ZXCOM software for two different drying techniques and several dry foods purchased from grocery stores. An attempt has been made to establish a correlation between electron density and drying method. This particular attempt is fairly new and there is no information on the correlation. The electron densities of foods dried with the new methods suggested in this study were found to be higher than the food samples taken from marketplace. Neff values of the dried samples and concentrations of calcium and potassium have been compared with drying type, in particular. 287 (09_PP04) Evaluation of Energy Absorption and Exposure Buildup Factors by Using G-P Fitting Approximation for Some Radioprotectors E. Kavaz, N. Ekinci, Y. Özdemir, E.Cinan, Ö. Ulusoy Department of Physics, Science Faculty, Atatürk University, 25240, Erzurum, Turkey esrakvz@gmail.com Newly, there has been an increase in the interest in research on radioprotective agents. The purpose is to achieve preferred protection of normal tissues against injury inflicted by ionizing radiation used to treat tumors. In the present study, we reported energy absorption (EABF) and exposure buildup factors (EBF) of commonly used some radioprotective agents using the five-parameter Geometric Progression (G-P) fitting method in the energy range 0.015–15 MeV for penetration depths up to 40 mean free path. Variations of EABF and EBF with incident photon energy and penetration depth were also studied. The results of the present work may be useful in radiation dosimetry and therapy studies. Keywords: buildup factor, radioprotective agent, progression, dosimetry 288 (09_PP05) Determination of Collimator Angles in Prostate VMAT Plans: Which Collimator Angle Should Be Used? I. F. Durmus1, B. TaĢ1, A. Çakir2, M. Okutan2, H. Bilge2, G. Kemikler2 1 Department of Radiation Oncology, Yeni Yüzyıl University Faculty of Medicine Gaziosmanpasa Hospital, İstanbul, Turkey 2 İstanbul University Institute of Oncology, Department of Medical Physics, İstanbul, Turkey. Firstly Planning Target Volume (PTV) and critical organ doses and then the patient QA results are determined in Prostate dual field VMAT plans with most appropriate collimator angle. Dual VMAT plans for 11 prostate patients is prepared with Eclipse 8.9.17 treatment planning system in 180,1-179,9 and 179,9-180,1 gantry angles with ±45° collimator angles. Plans that has same optimized parameters are obtained by re-optimizing in ±15°, ±30°, ±60° and ±75° collimator angles without changing optimization parameters of plans that are prepared with ±45°collimator angles. QA plans for 11 patients are prepared in 5 different collimator angles in PTW OCTAVIUS phantom and PTW 2D-Array evaluation setting and in their own collimator angles and measurements are taken in Varian RapidArc(DHX). Dose fluence maps that are taken from Eclipse treatment planning system with obtained measurements are evaluated with Gamma index method by implementing suppresses 5% of maximum dose. While similar MU values are found in ±15°, ±30°, ±45° collimator angles, higher MU values are found in ±60° and ±75° collimator angles. Maximum dose is obtained in ±45° collimator angle, better results about critic organ doses are obtained with ±30° collimator angle. In addition, better results about homogeneity are obtained in ±30° and ±45° collimator angle. If patient QA results are evaluated by gamma index analysis, better results are obtained in ±15°, ±30°, and ±45 collimator angles in contrast with ±60° and ±75° collimator angles in criterions of all dose differences and distance to agreement. Even similar results are obtained by criterions of all dose differences and distance to agreement in ±15°, ±30°, ±45 collimator angles, best gamma index results are obtained in ±30° collimator angle in this 5 collimator angles. Gamma values are less than 90% for criterion of %3-3 mm in ±60° and ±75° collimator angles. In our work, best results is obtained in Monitor Unit, Homogeneity and Conformity Indexes in PTV, critical organ doses and patient QA analysis by using to the results of ±30°collimator angle for dual field VMAT prostate patients. 289 Collimator Angle Max. (cGy) PTV74 HI CI PTV54 95% Rectum 17% 35% Bladder 25% 50% R Femur 10% L Femur 10% Penis Bulb 90% Total MU Reference isodose line ±15 (15°- ±30 (30°- ±45 (45°- ±60 (60°- ±75 (75°345°) 330°) 315°) 300°) 285°) 8052±112 0,072±0,01 0,971±0,01 5586±62 4474±523 2833±600 2799±1142 1359±855 2864±523 2504±773 8016±120 0,067±0,01 0,970±0,01 5570±57 4400±473 2647±496 2753±1158 1325±834 3108±504 2787±457 7968±80 0,065±0,007 0,973±0,007 5565±49 4433±527 2713±547 2835±1182 1430±895 2832±544 2781±311 8067±98 0,072±0,01 0,986±0,01 5557±49 4354±508 2639±495 2823±1249 1408±953 2667±518 2711±655 8124±105 0,077±0,006 0,987±0,01 5576±50 4553±416 2824±546 2991±1217 1423±861 2887±574 2965±588 819±276 883±263 872±261 856±225 781±224 620±54 616±38 618±30 685±66 653±92 97,58±0,54 97,94±0,67 98,07±0,67 290 97,84±0,88 97,67±0,65 (09_PP06) Comprasion of Dose Distrubution for Critical Organs with Intensity Modulated Radiotherapy and 3D Conformal Radiotherapy for Gastric Cancer Kudret Bektaş1and Abdurahman Kuzhan2 1 Gaziantep University, Graduate School of Health Sciences, Department of Radiation Oncology, Gaziantep, Turkey, kdrtbkts@gmail.com 2 Gaziantep University, Graduate School of Health Sciences, Department of Radiation Oncology, Gaziantep, Turkey, a_kuzhan46@hotmail.com In our study three dimensional conformal radiotherapy technique (3DCRT) and intensity modulated radiotherapy (IMRT) techniques were compared using dose volume histogram (DVH) due to determine to superiority between the treatment planning tecniques in clinical use for gastric cancer who had surgery. New radiotherapy (RT) plans was done using IMRT technique on computed tomography simulation images which belong to patients having standard RT plans, and both RT plans were compared. Cilinical target volume (CTV) and planning target volume (PTV) as target volume, spinal cord, liver, kidneys, heart as critical organs were defined. RT plan was formed as total dose 50.4 Gy and daily fraction dose 1.8 Gy. When 3DCRT and IMRT techniques were compared according to the 95% of PTV exposed to the dose; there were no statistically difference (p=0.909). When we compare the whole planning techniques according to the percentage of liver and spinal cord volume exposed to 30 Gy and more; IMRT technique was found to be statistically significant (p=0.001). Also, we observed that percentage absorbtion dose volume of all critical organs means decresed as percentage dose in IMRT technique. Abdominal RT may be recommended to protect for critical organs in postoperative gastric cancer patients in IMRT. 291 (09_PP07) Comparison of Dosimetry Gels Prepared by Agar and Bovine Gelatine M. E. Sağsöz1, 7, Ö. Korkut2, N. Alemdar3, S. Aktaş4, E. B. Çalı5 and M. Kantarcı6 1 Atatürk University, Faculty of Medicine, Biophysics Dept, Erzurum, Turkey, Atatürk University, Faculty of Egineering, Chem.Eng.Dept, Erzurum, Turkey, 3 Marmara University, Faculty of Egineering, Chem.Eng.Dept, İstanbul, Turkey 4 Regional Directorate of Hygiene Laboratory Erzurum, Turkey, 5 Erzurum Regional Research Hospital,Radiation Oncology Dept, Erzurum, Turkey, 6 Atatürk University, Faculty of Medicine, Radiology Dept, Erzurum, Turkey, 7 Author to whom any correspondence should be addressed mesagsoz@atauni.edu.tr 2 Gel dosimeters are unique materials capable of showing three dimensional (3D) dose distributions of therapeutic or diagnostic exposures. Fricke gel dosimeters can be considered as chemical dosimeters that rely on a radiation-induced chemical reaction. Dose distribution of Fricke solutions containing Fe+2 ions determines the transformation of acidic, oxygen saturated Fe+2 ions to Fe+3 ions by the ionising radiation in aqueous solutions. In this study we produced two different types of gel dosimeters using agar and bovine gelatin with similar fabrication methods. We compared the magnetic resonance (MR) T1 imaging responses of these two gel dosimeters to acquire a dose dependency of MR intensities. In conclusion agar gel dosimeters found to be produced easily and more consistent. Keywords: Gel dosimetry, Agar, Bovine gelatin, Fricke gel. 292 (09_PP08) Determination of Linear Attenuation Coefficients of Some Dosimetric Materials M. E. Sağsöz1, M. Yüksel2, Ö. Korkut3, S. Aktaş4, T. Doğan5, M. Topaksu2, R. Durak6 1 Atatürk University, Faculty of Medicine, Biophysics Dept., Erzurum, Turkey, mesagsoz@atauni.edu.tr 2 Çukurova University, Arts-Science Faculty, Physics Dept., Adana, Turkey, myuksel@cu.edu.tr, mats@cu.edu.tr 3 Atatürk University, Faculty of Egineering, Chemical Engineering Dept., Erzurum, Turkey, ozlemkor@atauni.edu.tr 4 Regional Directorate of Hygiene Laboratory Erzurum, Turkey, aktasveserkan@gmail.com 5 Çukurova University, Vocational School of Imamoglu, Dept. of Computer Techn., Adana, Turkey tdogan@cu.edu.tr 6 Atatürk University, Faculty of Science, Physics Dept., Erzurum, Turkey Thermoluminescent dosimeters (TLDs) and gel dosimeters are different types of passive radiation measurement materials. They have different operating principles. But the common critical point of these materials are their tissue equivalence since they are used to measure radiation dose distribution on human tissue and organs or inside phantoms. In this study we tried to determine linear attenuation coefficients of these materials at different gamma ray energies with an energy dispersive x-ray fluorescence system 241Am (59.5 keV) gamma source with a Si(Li) detector and multi-channel analyzer with software (Ortec, SLP140P, USA) with linear geometry. We compared the results with XCOM (NIST, USA) database. Keywords: TLDs, Gel dosimeters, Linear Attenuation Coefficients, Gamma-Rays, Tissue Equivalence 293 (09_PP09) Correlation between ratio of Na/K, Se/Zn, K/P, Cu/Zn, Se/Fe, Ca/P at breast cancer patients’ blood samples which exposed to radiation and their electron density O. Toker1, Y. Karabul1, E. O. Bursalıoğlu2, S. Bakırdere1, O. İçelli1 and D. Sarıbal3 1 Yıldız Technical University, İstanbul, Turkey 2 Sinop University, Sinop, Turkey 3 İstanbul University, İstanbul, Turkey ozantoker_@hotmail.com This study contains diagnostic diagram and new method for early diagnosis to breast cancer patients. Breast cancer patients' blood samples will be taken both before and after the radiation exposure. We will define the ratios of Na/K, Se/Zn, K/P, Cu/Zn, Se/Fe, Ca/P and electron density, effective atomic numbers, atomic, electronic and molecular effect. We will benefit from ZXCOM (windows program) which created by Yıldız Technical University in 2013. This program can calculate the effective atomic number with angle. Our goals are early diagnosis and condition binding for breast cancer patients without radiation. We are aiming to consider a correlation in changing effective atomic number and electron density at patients' blood samples. The research will initiate the progress new methods for all other cancers' diagnosis. 294 (09_PP10) Structural and Morphological Characterization of the Silk of Steatoda Paykulliana (Araneae: Theridiidae) By AFM, FTIR, EDX and SEM Analyses Salih Doğan1, Bülent Çağlar2, Çağrı Çırak3, Mustafa Çağlar1, Evren Buğa1 and Mert Elverici1,4 1 Department of Biology, Arts & Sciences Faculty, Erzincan University, Erzincan, Turkey, salihdogan@erzincan.edu.tr, mcaglar557@gmail.com, ebuga@erzincan.edu.tr 2 Department of Chemistry, Arts & Sciences Faculty, Erzincan University, Erzincan, Turkey, bcaglar@erzincan.edu.tr 3 Department of Physics, Arts & Sciences Faculty, Erzincan University, Erzincan, Turkey, ccirak@erzincan.edu.tr 4 Department of Biology, Sciences Faculty, Middle East Technical University, Ankara, Turkey, elverici@metu.edu.tr Silks have been widely used in textile, suture materials and biomaterials because of their unique physical, mechanical and biological properties such as lightweight, toughness, elasticity, biocompatibility, biodegradability, minimal inflammatory reaction, capability to promote wound healing, easy chemical modification. Understanding the structural, mechanical, physical, biological and morphological features of the silks have great importance in their industrial applications and they promote the researchers on the studies of these materials. The main objective of the present study was to investigate in detail the structural and morphological properties of the silken threads produced by Steatoda paykulliana (Walckenaer, 1805) (Araneae: Theridiidae) by using atomic force microscope (AFM), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and attenuated total reflection Fourier transmission infrared spectroscopy (ATR-FTIR) techniques. The widths and height of threads secreted by S. paykulliana ranged from 2.40 to 2.98 μm and 1.00 to 1.73 μm, respectively. The silk material was found to consist predominantly C, N and O elements and minor fractions of Si, Na and K. The ATR-FTIR spectrum of the silk of the spider exhibited characteristic vibrational modes originating from amid groups in the protein structure of the silk. Understanding the features of the S. paykulliana silks may be of practical importance for the future studies related to biomaterial and material science. Keywords: Steatoda paykulliana, silk, structural characterization, AFM, FTIR, EDX, SEM. 295 (09_PP11) The Oxidation Behavior of NiTi Based Shape Memory Alloys M. Kök1, Y. Aydoğdu2, A. Aydoğdu2, G. Ateş1, F. Dağdelen1 1 2 Fırat University, Faculty of Science, Department of Physics, Elazığ, Turkey Gazi University, Faculty of Science, Department of Physics, Ankara, Turkey The NiTi and NiTi based shape memory alloys are used as implant materials in human body. These alloys are functional materials but they need to be developed. NiTi alloy will be harmful for human body by containing Ni element. Since these alloys are used in human body, the active nickel elements in NiTi alloys are passivized with oxidation. In this study, oxidation behavior of NiTi based shape memory alloy was investigated. The thermal oxidation methods were applied by TG/DTA (thermogravimetric/ differential thermal analysis) devices. Transformation temperature of NiTi alloys were determined by DSC (differential scanning calorimetry) and the alloys which show transformation at body temperature were determined. The determined NiTi based alloys (transformed at body temperature) were oxided at three isothermal temperatures for 800 oC, 900 oC and 1000 oC. The isothermal oxidation parameters were calculated. It was seen that, the amount oxide were increased with the increase of oxidation temperature. This work is supported by TUBITAK under Project No: 113F234 296 (09_PP12) Effect of Boron Addition on Thermal Properties of NiMnCoInB Polycrystalline Shape Memory Alloys Y. Aydoğdu1, A. Aydoğdu1, M. Kök2 and Z. D. Yakıncı3 1 Gazi University, Faculty of Science, Department of Physics, Ankara, Turkey Fırat University, Faculty of Science, Department of Physics, Elazığ, Turkey 3 İnönü University, Vocational School of Health Service, Malatya, Turkey 2 Phase transformation temperature of shape memory alloys is one of the most parameters. In this study, the effects of boron addition on polycrystalline NiMnCoIn alloys were investigated. NiMn38Co5In10-xBx (in atomic) (x=2, 4, 6, 10, 12) alloys were prepared by arc melter under vacuum. The melting procedure was applied several times to ensure homogenization and then they were annealed under an inert atmosphere of argon, at 800 oC for 20 h. The crystal structure of the produced alloys was determined by using XRD. The transformation temperatures of NiMnCoInB alloys were determined via differential thermal analysis (DTA) and thermomechanical analysis (TMA). Transformation temperatures of alloys changed between 176 oC and 709 oC temperature range and increased with the increasing of Boron content. Thermal expansion measurements were performed using thermomechanical analysis (TMA) system. This work is supported by TUBITAK under Project No: 113F234 297 POSTER SESSIONS 10_ Physics Education 298 (10_PP01) Physics Teacher Candidates’ Understandings and Misconceptions of Newton's Third Law of Motion Önder Şimşek, Derya Şimşek, Özkan Bayram and M. Tolga Yurtcan Education Faculty of Kazım Karabekir, Atatürk University, Erzurum /Turkey The aim of this study was to find out understandings of physics teacher candidates at undergraduate level about Newton's third law of motion which is one of the basic concept in mechanic. For this purpose, a test composed of eight multiple choice questions was developed by the researchers. This test was administrated to forty first year undergraduates enrolled in Physics Education Department in Atatürk University in Turkey. After evaluating students’ responses to the test questions, to be able to examine their conceptual understanding properly, the semi-structured interviews were conducted with six students to asses two students with low level of achievement, two with medium and two with high level of achievement. All interview records were transcribed and analyzed. The findings of this study reveals that physics teacher candidates’ understandings of Newton's third law of motion is poor and they have some important misconceptions. 299 POSTER SESSIONS 11_ Astronomy and Astrophysics 300 (11_PP01) The Multi-color Photometry of the Open Cluster NGC6633 A. Elmaslı1 and Y. Nasolo 1 Department of Astronomy and Space Sciences, Ankara University, Tandoğan, Ankara 06100, Turkey, elmasli@ankara.edu.tr We carried out and analyzed new multi-color photometry of the open cluster NGC 6633 in the UBVRI passbands in a fairly large cluster field, about 43 arcmin × 43 arcmin. We constructed the color-magnitude diagrams (CMD) and empirically tuned isochrones to each of them. 301 (11_PP02) Current Status of Eastern Anatolia Observatory (DAG) Project C. Yeşilyaprak1,2, S. K. Yerli3 and O. Keskin4 1 Atatürk University Science Faculty Department of Astronomy and Astrophysics, Erzurum, Turkey, cahity@atauni.edu.tr 2 Atatürk University Research and Application for Astrophysics Center (ATASAM), Erzurum, Turkey, cahity@atauni.edu.tr 3 Middle East Technical University Art and Science Faculty Department of Physics, Ankara, Turkey, sinan@skyerli.org 4 FMV Isik University Engineering Faculty Department of Mechanical Engineering, İstanbul, Turkey, onur.keskin@isikun.edu.tr Eastern Anatolia Observatory (DAG) is the new observatory of Turkey with the optical and near-infrared largest telescope (4 m class) and its robust observing site infrastructure. This national project consists of three phases with DAG (Telescope, Enclosure, Buildings and Infrastructures), FPI (Focal Plane Instruments and Adaptive Optics) and MCP (Mirror Coating Plant) and is supported by the Ministry of Development of Turkey. Almost all the infrastructure (roads, geological and atmospherical surveys, electricity, fiber optics, cable car, water, generator, etc.) of DAG site (Erzurum/Turkey, 3,170 m altitude) have been completed. This poster is about the recent developments of DAG project. 302 (11_PP03) Local Meteorogical Study for Eastern Anatolia Observatory (DAG) F. Yüzlükoglu1, C. Yeşilyaprak,1,2 S. K. Yerli3, O. Keskin4, Y. Güuney5 and M. S. Niaei2 1 Atatürk University Science Faculty Department of Astronomy and Astrophysics, Erzurum, Turkey, fundayuzlukoglu25@gmail.com,cahity@atauni.edu.tr 2 Atatürk University Research and Application for Astrophysics Center (ATASAM), Erzurum, Turkey, cahity@atauni.edu.tr, m.shemuni@gmail.com 3 Middle East Technical Universty Art and Science Faculty Department of Physics, Ankara, Turkey, sinan@skyerli.org 4 Isık University Engineering Faculty Department of Mechanical Engineering, İstanbul, Turkey, onur.keskin@isikun.edu.tr 5 Atatürk University Science Faculty Department of Physics, Erzurum, Turkey, yguney@atauni.edu.tr Eastern Anatolia Observatory (DAG) is the new observatory of Turkey with the optical and near-infrared largest telescope. The local atmospherical or meteorogical study of DAG site and its vicinity is very significant for astronomy and an observatory. This poster is about the long-term meteorogical observations and analysis for DAG site and its vicinity. 303 (11_PP04) Low Luminosity AGNs in the Local Universe T. İkiz1, 2, R. F. Peletier2 and C. Yeşilyaprak1, 3 1 Atatürk University Science Faculty Department of Astronomy and Astrophysics, Erzurum, Turkey 2 Kapteyn Astronomical Institute, University of Groningen, Groningen, Netherlands 3 Atatürk University Research and Application Center for Astrophysics (ATASAM), Erzurum, Turkey Galaxies are known to contain black holes (e.g. Ferrarese & Merritt 2000), whose mass correlates with the mass of their bulge. A fraction of them also has an Active Galactic Nucleus (AGN), showing excess emission thought to be due to accretion of mass by the supermassive black hole at the center of the galaxy. It is thought that AGNs play a very important role during the formation of galaxies by creating large outflows that stop star formation in the galaxy (see e.g. Kormendy & Ho 2013). The aim is to detect the fraction of Low Luminosity Active Galactic Nucleus (LLAGN) in the nearby Universe. At present, they are typically found using optical spectroscopy (e.g. Kauffmann, Heckman et al. 2003), who discuss the influence of the AGN on the host galaxy and vice versa. However, optical spectra are seriously affected by extinction in these generally very dusty objects, and therefore can only give us partial information about the AGN. I used a newly-found method, and apply it to the S4G sample, a large, complete, sample of nearby galaxies, which I am studying in detail with a large collaboration, to detect the fraction of low luminosity AGNs, and to better understand the relation between AGNs and their host galaxy which is thought to be crucial for their formation. 304 (11_PP05) Colour Relations For Mira and Semiregular (Sr) Type Stars Y. Güney1 and C. Yeşilyaprak2,3 1 Atatürk University Science Faculty Department of Physics, Erzurum, Turkey, yguney@atauni.edu.tr 2 Atatürk University Science Faculty Department of Astronomy and Astrophysics, Erzurum, Turkey, cahity@atauni.edu.tr 3 Atatürk University Research and Application for Astrophysics Center (ATASAM), Erzurum, Turkey, cahity@atauni.edu.tr In this study, period-colour relations, colour-colour relations, the effective temperature and the mass loss were examined for Semiregular (SR) and Mira type variable stars. SR variables show an obvious period-colour relations, especially in IR. There are differences between Semiregular and Mira type variable stars with respect to their colour relations. It has been thought that these differencies are caused by their mass loss rates and effective temperatures. 305 (11_PP06) The First Astronomical Seeing Measurements From Ata50 Telescope Site Y. Güney1, C. Yeşilyaprak2,3 and S. K. Yerli4 1 Atatürk University Science Faculty Department of Physics, Erzurum, Turkey, yguney@atauni.edu.tr 2 Atatürk University Science Faculty Department of Astronomy and Astrophysics, Erzurum, Turkey, cahity@atauni.edu.tr 3 Atatürk University Research and Application for Astrophysics Center (ATASAM), Erzurum, Turkey, cahity@atauni.edu.tr 4 Middle East Technical University Art and Science Faculty Department of Physics, Ankara, Turkey, sinan@skyerli.org Seeing of a site is always found to be one of the fundamental defining factor in determining the quality of observations carried on the site. Sites continously monitor this value to keep track of the quality, and therefore they have to continously analyse seeing monitor images by using both hardware and software tools. A simple seeing monitor device (SBIG/SM) has been used to record local seeing values of ATA50 telescope which is operated under DAG (East Anatolia Observatory) Project which is conducted by ATASAM (Research and Application for Astrophysics Center). Even though procedures of SBIG/SM is automated, adapting the values to determine the quality required some sort of decisions. This is succesfully achieved in this work. 306 (11_PP07) Night Sky Quality Measurements at the ATA50 Telescope İ. Nasıroğlu1 and Y. Güney2 1 Atatürk University Science Faculty Department of Astronomy and Astrophysics, Erzurum, Turkey, inasir@atauni.edu.tr 2 Atatürk University Science Faculty Department of Physics, Erzurum, Turkey, yguney@atauni.edu.tr One of the most important factor affecting the quality of the sky in astronomy is the light pollution (luminance of the night sky). This effect occurs by using the light source of outdoor lighting in the wrong way. Light pollution can be reduced by lighting only what is actually needed, when and where it is needed. In generaly, SQM (Sky Quality Meter- Clear Sky Detector) is used to measure this light effect. In this work We present night sky brightness measurements performed at the Atatürk University Astrophysics Research Telescope (ATA50) and the surrounding area, Erzurum, TURKEY. 307 POSTER SESSIONS 12_ Other Topics 308 (12_PP01) One-pot Electrochemical Synthesis and Characterization of Lead Oxide-Electroreduced Graphene Oxide (PbO-ERGO) Nanostructures Bingül Kurt Urhan 1, Hülya Öztürk Doğan2, Tuba Öznülüer3, Ümit Demir4 1- Department of Nanoscience and Nanoengineering, Nanomaterials Science, Atatürk University, Erzurum, Turkey, bingul.kurt@hotmail.com 2-Department of Chemistry and Chemical Processing Technologies, Erzurum Vocational College, Atatürk University, Erzurum, Turkey, hdogan@atauni.edu.tr 3-Department of Chemistry, Faculty of Sciences, Atatürk University, Erzurum, Turkey, tozkim@atauni.edu.tr 4-Department of Chemistry, Faculty of Sciences, Atatürk University, Erzurum, Turkey, udemir@atauni.edu.tr The fabrication of metal oxide thin films presently relies on different methods such as physical or chemical vapor deposition, sol-gel, electrodeposition and chemical bath deposition. The electrochemical process is very simple and convenient for tailoring the size and morphology of the products. In lead oxides, a wide variety of crystalline phases have been identified including α-PbO, β-PbO, Pb3O4, Pb2O3, Pb12O19, α-PbO2, and β-PbO2. There are a number of both theoretical and experimental studies of different forms of lead oxide which show interesting optical and electronic properties that point towards it being a very useful photovoltaic material. Pure PbO has been reported to be the final product of thermal decomposition process of number of different lead compounds .Graphene which is the basic structure of all graphitic forms, has drawn much attention because of its unusual electronic properties and ability to improve catalytic properties. Especially, the hybrid composites, formed by metal or metal oxide with graphene or graphene oxide, have been the most studied research topic in the last few years .In this study, PbO-ERGO thin films have been prepared with a new electrochemical process, based on codeposition from the same solution. The synthesized materials were characterized by XRD, EDS, XPS and SEM techniques. 309 (12_PP02) The Effect of Synthetic Polyelectrolyte on the Photophysical Properties of Cationic Dye Safranine-T Ebru Bozkurt1, Kadem Meral2 and Yavuz Onganer2 1 Program of Occupational Health and Safety, Erzurum Vocational Training School, Atatürk University, TR-25240 Erzurum, Turkey, ebrubozkurt@atauni.edu.tr 2 Department of Chemistry, Faculty of Science, Atatürk University, TR-25240 Erzurum, Turkey, kademm@atauni.edu.tr, yonganer@atauni.edu.tr In This Study, The Photophysical Properties Of A Cationic Dye Safranine-T (ST) Were Examined In Pure Water And Synthetic Polyelectrolyte Polystyrene Sulfonate (PSS) Aqueous Solution By Using UV-Vis Absorption And Steady-State Fluorescence Spectroscopy Techniques. It Was Observed That The Electrostatic Interaction Of ST With PSS Led To Remarkable Changes In The Photophysical Properties Of ST. Importantly, A Hypsochromic Shift Was Observed For Absorption Maximum Of ST In Dilute PSS Aqueous Solution Compared To That In Pure Water. According To The Spectral Data, It Was Determined That The H-Aggregate Structure Of ST In Dilute PSS Aqueous Solution Was Formed. Since The H-Aggregate Structure Of ST Was Nonfluorescence, The Fluorescence Intensity Of ST Was Lower In Low PSS Concentrations Than Those In Higher PSS Concentrations. At High PSS Concentrations, The Absorption Band Of ST Shifted To Red Compared To That In Pure Water. It Was Believed That This Red Shift Was Attributed To The Formation Of JAggregates. Also, This Situation Caused An Increase On Fluorescence Intensity Of ST. Consequently, The Changes In The Absorbance And Fluorescence Properties Of ST As A Function Of PSS Concentration Have A Fairly Important For Material Chemistry. 310 (12_PP03) Electrode Prepared By Supercritical Carbon Dioxide Deposition Technique For PEM Fuel Cell E. Daş1 and A. Bayrakçeken Yurtcan2 1 Department of Nanoscience and Nanoengineering, Erzurum, Turkey, das.elif@gmail.com 2 Department of Chemical Engineering, Erzurum, Turkey, ayse.bayrakceken@gmail.com Future energy concerns demand a transition from fossil fuels to energy resources which is more environmental friendly and durable. As an alternative energy source, polymer electrolyte membrane fuel cells (PEMFCs) have attracted considerable attention as a transport and portable power source for low operation temperature and rapid start-up. Despite considerable progress in PEMFC, catalytic stability and durability still need to be improved. Especially, carbon supported electrocatalysts are important factor to upgrade the performance of PEMFCs. Recently, graphene has extensively been studied in the context of future energy solution because of its unique electronic and mechanical properties and extremely high surface area. This special nanostructure show great promise as new electrode material for PEM fuel cell applications. In this study, firstly graphene oxide (GO) was synthesized from natural graphite powder by the method of Hummers and Offeman. Reduced graphene oxide (rGO) was obtained with GO reduction by using a reflux system (at 150 ˚C for 6 h) in dimethylformamide (DMF) solution. Then Pt nanoparticles on rGO were obtained by using supercritical carbon dioxide deposition (scCO2) technique. Pt organometallic precursor dissolved in scCO2 (at 35˚C and 12 MPa) with different amounts then adsorbed on the synthesized rGO. The precursor was decomposed to its metallic form with the heat treatment at 400˚C for 4 h in nitrogen atmosphere. Adsorption on the rGO was investigated and different Pt loadings were obtained. The rGO and prepared catalysts were characterized by using SEM, EDS, BET, XRD, TEM, TGA and PEM fuel cell performance tests. 311 (12_PP04) Different Reactant Assisted Synthesis of Nano CuO for H2O2 Electrochemical Sensor G. Bozkurt1, A. Bayrakçeken Yurtcan2 and A. K. Özer3 1 2 Atatürk University, Erzurum, Turkey, bozkurtgamze@ymail.com Atatürk University, Erzurum, Turkey, ayse.bayrakceken@gmail.com 3 Atatürk University, Erzurum, Turkey, kadirozer@atauni.edu.tr In this study, CuO nanostructures having different structures were synthesized with chemical precipitation method by using NH3+KOH and KOH+NH3 reactants. The changes in the nanostructures with the addition of different materials were investigated by using TGA, XRD, FT-IR and SEM techniques. The performance of the resulting CuO nanostructures in H2O2 sensing were also investigated by using cyclic voltammetry technique. It was observed that the structural properties and also H2O2 sensing properties significantly affected by different structures of the CuO materials. Plate and rod structures were obtained when either NH3+KOH or KOH+NH3 were used as the reactants. It was shown that the electrocatalytic activity towards H2O2 sensing can be changed according to the different nanostructures of CuO. 312 (12_PP05) The Investigation of Novel 3-(P-Chlorobenzyl)-4-(2-Benzoxy-3Ethoxybenzylidenamino)-4,5-Dihydro-1h-1,2,4-Triazol-5-One With Gaussian 09w Program Haydar Yüksek1, Faruk Kardaş2, Gül Kotan3 1 2 Department of Chemistry, Kafkas University, Kars, Turkey, hhigh61@gmail.com Erzincan University, Education Faculty, Erzincan, Turkey, fkardas2400@gmail.com 3 Kafkas University, Kars Vocational School, Kars, Turkey, gulkemer@hotmail.com In this study, the compound was optimized by using the B3LYP/631G (d,p) and HF/631G (d,p) basis sets [1,2]. 1H-NMR and 13C-NMR isotropic shift values were calculated by the method of GIAO using the program package Gaussian G09 [1]. Experimental [3] and theoretical values were inserted into the grafic according to equatation of δ exp=a+b. δ calc. The standard error values were found via SigmaPlot program with regression coefficient of a and b constants. IR absorption frequencies of analysed molecule were calculated by two methods. The veda4f program, was used in defining IR data, which were calculated theoretically [4]. Furthermore, molecule’s experimental [3] and theoretical UV-Vis values, theoretical bond lengths, dipole moments, mulliken charges, HOMO-LUMO energies and total energy of the molecule for both methods were calculated. N CH2 O NH N O N CH CI 313 O C OCH2CH3 References 1. Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). 2. Wolinski, K.; Hilton, J.F.; Pulay, P. J. Am. Chem. Soc., 112, 512, (1990). 3. Jamróz, M.H. Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 314 (12_PP06) Experımental and Theoretıcal Values of Novel 1-(Morpholıne-4-Yl-Methyl)-3-Methyl-4(4-Ethylbenzylıdenamino)-4,5-Dıhydro-1h-1,2,4-Trıazol-5-One Molecule Haydar Yüksek1, Gül Kotan2 1 2 Department of Chemistry, Kafkas University, Kars, Turkey, hhigh61@gmail.com Kafkas University, Kars Vocational School, Kars, Turkey, gulkemer@hotmail.com The compound was optimized by using the B3LYP/631G (d,p) and HF/631G (d,p) basis sets [1,2]. 1H-NMR and 13C-NMR isotropic shift values were calculated by the method of GIAO using the program package Gaussian G09W [2]. Experimental and theoretical values were inserted into the graphic according to equitation of δ exp = a+b. δ calc. The standard error values were found via Sigma Plot program with regression coefficient of a and b constants. IR absorption frequencies of analyzed molecule were calculated by B3LYP/HF631G (d,p) methods. The veda4f program was used in defining IR data, which were calculated theoretically [3]. The experimental and the obtained theoretical values were compared and found by regression analyses that are accurate. Experimentally and theoretically UV-vis values in ethanol were calculated and compared. Additionally, this compound was found bond angles, bond lengths, the HOMO-LUMO energy and mulliken charges by using two basis sets. N N N O N N O References: 1- Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; 315 Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; 2-Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). 3-Wolinski, K.; Hilton, J.F.; Pulay, P. J. Am. Chem. Soc., 112, 512, (1990). 4-Jamróz, M.H. Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 316 (12_PP07) Gaussian Calculations of Novel 3-Methyl-4-[3-(P-Methoxybenzensulfonyloxy)-4Methoxybenzylidenamino]-4,5-Dihydro-1h-1,2,4-Triazol-5-One Using B3lyp and Hf Basis Sets Özlem Aktaş Yokuş1, Haydar Yüksek2, Gül Kotan3 1 Erzincan University, Education Faculty, Kars, Turkey, ozak36@gmail.com Department of Chemistry, Kafkas University, Kars, Turkey, hhigh61@gmail.com 3 Kafkas University, Kars Vocational School, Kars, Turkey, gulkemer@hotmail.com 2 3-Methyl-4-[3-(p-methoxybenzensulfonyloxy)-4-methoxybenzylidenamino]-4,5-dihydro-1H1,2,4-triazol-5-one has been optimized using B3LYP/6311G(d) and HF/6311G(d) basis set [1]. Starting from this optimized structure with 1H-NMR and 13C-NMR spectral data values according to GIAO method was calculated using the method of Gaussian G09W program package in gas phase [2]. Theoretically and experimentally values were plotted according to δ exp=a. δ calc.+ b, Eq. a and b constants regression coefficients with a standard error values were found using the Sigma Plot program. In the theoretical part of study also, Theoretically calculated IR datas of synthesized new compound was calculated in gas phase by using of 631G(d) basis sets of B3LYP and HF methods and are multiplied with appropriate adjustment factors and the data obtained according to B3LYP and HF methods are formed using theoretical infrared spectrum. The identification of calculated IR data was used in veda4f program [3]. Furthermore, the molecule was found dipole moments, the HOMO-LUMO energy and total energy of the molecule with from both methods. O O O OCH3 N CH CH3 N N N S O H 317 OCH3 References: 1] Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). [2] Wolinski, K.; Hilton, J.F.; Pulay, P. J. Am. Chem. Soc., 112, 512, (1990). [3] Jamróz, M.H. Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 318 (12_PP08) Spectroscopic Properties of Novel Bis {4-[3-Methyl-4,5-Dihydro-1h-1,2,4-Triazol-5-One4-Yl)-Azomethine]Phenyl} Biphenyl-4,4'-Disulfonate Molecule Murat Beytur1, Haydar Yüksek1, Güventürk Uğurlu2 1 Department of Chemistry, Kafkas University, Kars, Turkey muratbeytur83@gmail.com, hhigh61@gmail.com 2 Department of Physics, Kafkas University, Kars, Turkey, gugurlu@kafkas.edu.tr In this study, bis{4-[3-methyl-4,5-dihydro-1H-1,2,4-triazol-5-one-4-yl)-azomethine]phenyl} biphenyl-4,4'-disulfonate was synthesized by the reaction of 3-methyl-4-amino-4,5-dihydro1H-1,2,4-triazol-5-one with bis(4-formyl phenyl) biphenyl-4,4'-disulfonate. The molecule was optimized by using the B3LYP/631G (d) and HF/631G (d) basis sets [1,2]. IR absorption frequencies of analysed molecule were calculated by two methods. Theoretically calculated IR data are multiplied with appropriate adjustment factors and the data obtained according to HF and DFT method are formed using theoretical infrared spectrum. Then, they were compared with experimental data, which are shown to be accurate. The veda4f program, was used in defining IR data, which were calculated theoretically [3]. In addition to, molecule’s theoretical bond lengths, UV-Vis values, dipole moments, formal charges, HOMO-LUMO energies, total energy of the molecule, ionization potential, electron affinity and calculated thermodynamic properties for both methods were calculated. O N CH H3C N O S S O O N N O HC N O N O O H CH3 N N H Keywords: HOMO-LUMO, 1,2,4-triazol-5-one, IR, HF, B3LYP and thermodynamic References: [1] Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; 319 Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). [2] Wolinski, K.; Hilton, J.F.; Pulay, P.; J. Am. Chem. Soc., 112, 512, (1990). [3] Jamróz, M.H. Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 320 (12_PP09) Gaussian Calculations of 1-Methyl-3-Phenyl-4-(3-Hydroxybenzylidenamino)-4,5Dihydro-1h-1,2,4-Triazol-5-One Molecule Özlem Gürsoy-Kol1, Haydar Yüksek1, Murat Beytur1, Güventürk Uğurlu2 1 Department of Chemistry, Kafkas University, Kars, Turkey, ozlemgursoy@gmail.com, muratbeytur83@gmail.com, hhigh61@gmail.com 2 Department of Physics, Kafkas University, Kars, Turkey, gugurlu@kafkas.edu.tr In this study, 1-methyl-3-phenyl-4-(3-hydroxybenzylidenamino)-4,5-dihydro-1H-1,2,4triazol-5-one compound [1] was optimized by using the B3LYP/6311G + (d,p) and HF/6311G + (d,p) basis sets [2, 3]. IR absorption frequencies of analysed molecule were calculated by two methods. Theoretically calculated IR data are multiplied with appropriate adjustment factors and the data obtained according to HF and DFT method are formed using theoretical infrared spectrum. Then, they were compared with experimental data [1], which are shown to be accurate. The veda4f program, was used in defining IR data, which were calculated theoretically [4]. Additionally, this compound was found the HOMO-LUMO energy, bond lengths, bond angles, ionization potential, electron affinity, mulliken charges and calculated thermodynamic properties by using the B3LYP/6-311G + (d, p) and HF/6-311G + (d, p) basis sets. Keywords: HOMO-LUMO, optimize, IR, bond lengths, HF, DFT 321 and veda4f References: [1] Gürsoy-Kol, Ö., ―Bazı 4.5-Dihidro-1H-1,2,4-triazol-5-on Türevlerinin Sentezi, Yapılarının Aydınlatılması, Antioksidan ve Asitlik Özelliklerinin Ġncelenmesi, Doktora Tezi, Kafkas Üniversitesi, Fen Bilimleri Enstitüsü, Kars (2008). [2] Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). [3] K. Wolinski, J.F.; Hilton, P.; Pulay, J.; Am. Chem. Soc., 112, 512, (1990). [4] Jamróz, M.H. Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 322 (12_PP10) Experimental and Theoretical Properties of 3-Methyl/N-Propyl-4-(3-Methoxy-4Hydroxybenzylidenamino-4,5-Dihydro-1h-1,2,4-Triazol-5-Ones Sevda Manap, Haydar Yüksek, Hilal Medetalibeyoğlu Department of Chemistry, Kafkas University, Kars, Turkey, manapsevda@gmail.com, hhigh61@gmail.com, hilalmedet@gmail.com The geometry of compounds a and b were optimized by using the B3LYP/6-311G(d,p) and HF/6-311G(d,p) basis sets [1]. Nuclear shielding consants were also calculated by using with the same basic sets. 1H-NMR and 13C-NMR spectrums of this compound were studied experimentally [2] and theoretically. Afterwards, the shift values of 1H NMR ve 13C NMR were calculated by using the Gaussian G09W program package in gas phase according to method of GIAO [3]. The standard error rate was calculated according to δ calc=a δexp + b formula. Experimentally and theoretically UV-vis values in ethanol were calculated and compared. The identification of calculated IR data was used in veda4f program [4]. Additionally, molecules of the bond angles, bond lengths, dipole moments, the HOMOLUMO energy and total energy of the molecule with mulliken charges from both methods were found. Theoretical values are compared to the experimental datas [2]. N CH R OCH3 N N OH N O H R= a: -CH3, b: -CH2CH2CH3 References: [1] Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; 323 Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). [2] Manap, S., ―Bazı yeni 3-alkil(aril)-4-(3,4-disubstituebenzilidenamino)-4,5-dihidro-1H1,2,4-triazol-5-on türevlerinin sentezi, yapılarının aydınlatılması, antioksidan ve asitlik özelliklerinin incelenmesi‖, Yüksek Lisans Tezi, Kafkas Üniversitesi Fen Bilimleri Enstitüsü, Kars (2009). [3] Wolinski, K.; Hilton, J.F.; Pulay, P. J. Am. Chem. Soc., 112, 512, (1990). [4] Jamróz, M.H. Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 324 (12_PP11) The Spectral (Ft-Ir, Uv-Visible, Nmr) Features and Theoretical Studies of 3-Phenyl-4-[3(2-Methylbenzoxy)-Benzylidenamino]-4,5-Dihydro-1h-1,2,4-Triazol-5-One Haydar Yüksek, Songül Ulufer, Özlem Gürsoy-Kol, Hilal Medetalibeyoğlu Department of Chemistry, Kafkas University, Kars, Turkey, hhigh61@gmail.com, sngulufer@gmail.com, hilalmedet@gmail.com The 3-phenyl-4-[3-(2-methylbenzoxy)-benzylidenamino]-4,5-dihydro-1H-1,2,4-triazol-5-one has been optimized using B3LYP/6-31G (d) and HF/6-31G (d) basis set [1]. Starting from this optimized structure with 1H-NMR and 13C-NMR and IR spectral data values according to GIAO [2] method was calculated using the method of Gaussian G09W program package in gas phase. Theoretically and experimentally values [3] were plotted according to exp =a +b. δ calc Eq. a and b constants regression coefficients with a standard error values were found using the SigmaPlot program. Theoretically calculated IR data are multiplied with appropriate adjustment factors and the data obtained according to HF and DFT method are formed using theoretical infrared spectrum. The identification of calculated IR data was used in veda4f program[4]. Experimentally and theoretically UV-vis values in ethanol were calculated and compared. CH3 O OC N=CH N N N O H References: [1] Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; 325 Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). [2] Wolinski, K.; Hilton, J.F.; Pulay, P. J. Am. Chem. Soc., 112, 512, (1990). [3] Ulufer, S., ―Bazı yeni 4-[3-(2-metilbenzoksi)-benzilidenamino]-4,5-dihidro-1H-1,2,4triazol-5-on türevlerinin sentezi, yapılarının aydınlatılması ve bazı özelliklerinin incelenmesi‖, Yüksek Lisans Tezi, Kafkas Üniversitesi Fen Bilimleri Enstitüsü, Kars (2014). [4] Jamróz, M.H. Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 326 (12_PP12) The Investigation of Experimental and Theoretical Spectroscopic Properties of 3Phenyl-4-[4-(Dimethylamino)Benzylidenamino]-4,5-Dihydro-1h-1,2,4-Triazol-5-One Compound Haydar Yüksek1, Şule Bahçeci2, Hilal Medetalibeyoğlu1 1 Department of Chemistry, Kafkas University, Turkey, Kars hhigh61@gmail.com, hilalmedet@gmail.com 2 Department of Chemistry, Karadeniz Technical University, Trabzon, Turkey, sbahceci@gmail.com The compound was optimized by using the B3LYP/6-31G (d,p) and HF/6-31G (d,p) basis sets [1, 2]. 1H-NMR and 13C-NMR isotropic shift values were calculated by the method of GIAO using the program package Gaussian G09 [2]. Experimental [3] and theoretical values were inserted into the grafic according to equatation of δ exp=a+b. δ calc. The standard error values were found via SigmaPlot program with regression coefficient of a and b constants. IR absorption frequencies of analysed molecule were calculated by two methods. The veda4f program, was used in defining IR data, which were calculated theoretically [4]. The experimental [3] and the obtained theoretical values were compared and found by regression analysis that are accurete. In addition to, Experimental [3] and theoretical UV-Vis values were calculated. N N N CH N(CH3)2 HN O References: [1]. Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; 327 Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). [2]. Wolinski, K.; Hilton, J.F.; Pulay, P. J. Am. Chem. Soc., 112, 512, (1990). [3]. Bahçeci, ġ. ; Yüksek, H. ; Ocak Z. ; Azaklı, A. ; Alkan, M. ; Özdemir, M.; ―Synthesis and potentiometric titrations of some new 4-(benzylideneamino)-4,5-dihydro-1H-1,2,4triazol-5-one derivatives in non-aqueous media‖, Collect. Czech. Chem. Commun., 67(8), 1215-1222, (2002). [4]. Jamróz, M.H. Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 328 (12_PP13) A Study on Theoretical and Experimentical Spectroscopic Properties of 1-Acetyl-3Benzyl-4-[4-(Dimethylamino)Benzylidenamino]-4,5-Dihydro-1h-1,2,4-Triazol-5-One Molecule Haydar Yüksek, Fevzi Aytemiz, Hilal Medetalibeyoğlu Department of Chemistry, Kafkas University, Kars, Turkey, hhigh61@gmail.com, fevziaytemiz53@gmail.com, hilalmedet@gmail.com In this study, the molecule was optimized by using the B3LYP/6-311G (d) and HF/6-311G (d) basis sets [1, 2]. Afterwards, 1H-NMR and 13C-NMR isotropic shift values were calculated by the method of GIAO using the program package Gaussian G09W [1]. Experimental [3] and theoretical values were inserted into the graphic according to equitation of δ exp=a+b. δ calc. The standard error values were found via SigmaPlot program with regression coefficient of a and b constants. Furthermore, molecule’s theoretical bond lengths, experimental [3] and theoretical UV-Vis values, dipole moments, mulliken charges, HOMO-LUMO energies, total energy of the molecule, ionization potential and electron affinity for both methods were calculated. CH2 O H 3C N C N CH3 N O N CH N CH3 References: [1] Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, 329 J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). [2] Wolinski, K.; Hilton, J.F.; Pulay, P.; J. Am. Chem. Soc., 112, 512, (1990). [3] Bahçeci, ġ. ; Yüksek, H. ; Ocak Z. ; Azaklı, A. ; Alkan, M. ; Özdemir, M.; ―Synthesis and potentiometric titrations of some new 4-(benzylideneamino)-4,5-dihydro-1H-1,2,4triazol-5-one derivatives in non-aqueous media‖, Collect. Czech. Chem. Commun., 67(8), 1215-1222, (2002) 330 (12_PP14) Experimental and Theoretical Calculation Using Dft/B3lyp and Hf Methods With 6311g (D) Basis Set Of 3-Phenyl-4-[4-Methoxy-(3-Cinnamoyloxy)Benzylidenamino]-4,5Dihydro-1h-1,2,4-Triazol-5-One Feyzi Sinan Tokalı, Haydar Yüksek, Hilal Medetalibeyoğlu Department of Chemistry, Kafkas University, Kars, Turkey feyzitokali@gmail.com, hhigh61@gmail.com, hilalmedet@gmail.com The molecular geometry was optimized using density functional theory (DFT/B3LYP) and hartree fock (HF) methods. [1, 2]. Afterwards, from the optimized geometry of the molecule, dipole moments, bond lengths, bond angles, total energy of the molecule HOMO–LUMO energies and mulliken changes were calculated with B3LYP /6-311G(d,p) and HF/6-311G (d,p). 1H-NMR and 13C-NMR isotropic shift values were calculated by the method of GIAO using the program package Gaussian G09W [1]. Experimental [3] and theoretical values were inserted into the graphic according to equitation of δ exp=a+b. δ calc. The standard error values were found via SigmaPlot program with regression coefficient of a and b constants. O OC N CH CH OCH3 CH N N N O H References: [1] Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; 331 Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). [2] Wolinski, K.; Hilton, J.F.; Pulay, P.; J. Am. Chem. Soc., 112, 512, (1990). [3] Tokalı, F. S., ―1,2,4-triazol-5-on türevlerinin sentezi üzerine bir çalıĢma‖, Yüksek Lisans Tezi, Kafkas Üniversitesi Fen Bilimleri Enstitüsü, Kars (2011). 332 (12_PP15) Effect of Sol Aging Time on the Wear Properties of TiO2 -SiO2 Composite Films Prepared by a Sol-Gel Method M. Yazıcı 1*, O. Çomaklı 2, T. Yetim 3, A. F. Yetim 4 and A. Çelik 5 1 Erzurum Technical University, High Technology Research and Application Centre, Erzurum, Turkey, mustafa.yazici@erzurum.edu.tr 2 Atatürk University, Faculty of Engineering, Department of Mechanical Engineering, Erzurum,Turkey, onur.comakli@atauni.edu.tr 3 Erzurum Technical University, Faculty of Engineering and Architecture, Department of Chemical Engineering, Erzurum,Turkey, tuba.yetim@erzurum.edu.tr 4 Erzurum Technical University, Faculty of Engineering and Architecture, Department of Mechanical Engineering, Erzurum, Turkey, fatih.yetim@erzurum.edu.tr 5 Atatürk University, Faculty of Engineering, Department of Mechanical Engineering, Erzurum,Turkey, ayhcelik@atauni.edu.tr TiO2–SiO2 composite films were deposited with composite sols of different aging time (unaged, 1, 4, 8 weeks) by a sol–gel method on Cp-Ti substrate. The effect of sol aging time on the structural and wear properties of composite coatings were investigated by using pinondisc tribotester. Tribological properties of the composite films were significantly influenced with the increment of the aging time. Composite coatings prepared from unaged sol showed the best wear resistance. This may be attributed to their high surface hardness, roughness surface and self-lubricant phase structure. The structure of composite coatings was analyzed by XRD and SEM. It was observed that increment of sol aging time led to increase of grain size. The roughness and wear volume values of TiO2–SiO2 composite films were investigated by 3D profilometer. It was obtained that the roughness and wear volume values increased with the increment of the aging time. Keywords: Sol-gel; Composite film; Sol Aging Time; TiO2-SiO2 coating 333 (12_PP16) The effect of Sintering Temperature on Physically Mechanical Properties of Low Binder WC Composite Na-Ra Park1, Hon Chung Shin1 and Hyun 1 1 ICC Division, Korea institute of Carbon Convergence Technology, Jeonju, Republic of Korea, nrpark2580@hmail.com Due to its superior hardness, Tungsten carbide materials are widely used for a variety of machining, cutting, drilling and other application. However, it is difficult for tungsten carbide to be fully consolidated because of its high sintering temperature. Therefore, sintering temperature is a significant role in densifying tungsten carbide composite and showing its higher mechanical property. In this study, the role of sintering temperature on physically mechanical properties of tungsten carbides was investigated. Low binder tungsten carbide composites were fabricated by Spark Plasma Sintering (SPS) method. The highest relative density of the tungsten carbide was 99.2% and could be fabricated with simultaneous application of 80 MPa pressure and activated pulsed current within 2 min without significant change in grain size. The average grain size of the tungsten carbide was approximately 1 ㎛. The hardness and fracture toughness of the dense tungsten carbide composite produced by SPS were measured by Vickers hardness (Mitutoyo). 334 (12_PP17) The Effects of Aging Time on the Structural and Electrochemical Properties of Sol–Gel Prepared Composite Coatings on CP-Ti O. Çomaklı 1*, M. Yazıcı 2, T. Yetim 3, A. F. Yetim 4 and A. Çelik 5 1 Atatürk University, Faculty of Engineering, Department of Mechanical Engineering, Erzurum,Turkey, onur.comakli@atauni.edu.tr 2 Erzurum Technical University, High Technology Research and Application Centre, Erzurum,Turkey, mustafa.yazici@erzurum.edu.tr 3 Erzurum Technical University, Faculty of Engineering and Architecture, Department of Chemical Engineering, Erzurum,Turkey, tuba.yetim@erzurum.edu.tr 4 Erzurum Technical University, Faculty of Engineering and Architecture, Department of Mechanical Engineering, Erzurum, Turkey, fatih.yetim@erzurum.edu.tr 5 Atatürk University, Faculty of Engineering, Department of Mechanical Engineering, Erzurum,Turkey, ayhcelik@atauni.edu.tr In this study, The TiO2-SiO2 composite coatings were prepared with using solutions aged with different aging time (unaged,1,3 and 10 weeks) by sol–gel process on commercial pure titanium (CP-Ti). Phase identifications of samples were analyzed with X-ray diffraction. Morphologies were observed with a scanning electron microscope. The results showed anatase-TiO2 and quartz-SiO2 peaks were observed from all composite coatings deposited on substrate surface with sol of different aging time. Average grain size increased with increasing sol-aging time and the average smallest grain sizes were obtained from the sample coated with unaged sol. The electrochemical properties of composite films were determined by potantiostat/galvanostat device in simulated fluid body (SBF). Moreover, Accoroding to electrochemical test results, the corrosion resistance of composite coatings in SBF significantly increased with decreasing of grain size. Composite coatings deposited with unaged sol displayed the best corrosion resistance. Keywords: composite coatings; TiO2-SiO2; sol-gel; electrochemical properties 335 (12_PP18) Characterization of Thin Film Coatings Obtained from Essential Oil Components Ö. Şimşek1, Ö. Bayram2, M. T. Yurtcan1 and E. İgman2 1 2 Atatürk University, Department of K.K. Education Faculty, Erzurum, Turkey, Atatürk University Department of Nanoscience and Nanoengeenering, Erzurum, Turkey *obayram@bayburt.edu.tr In this study, we grown essential oil compounds on microscope slides and KBr glass in order to create antimicrobial polymeric coatings. First, the substrates were cleaned and once the pressure in the vacuum chamber reaches down to 1 mTorr, the essential oil compounds were introduced into the chamber slowly. RF power was delivered to the chamber via two electrodes in order to create the plasma. The polymeric coatings were obtained by employing radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). We employed FTIR in order to compare the chemical composition of the thin films to those of the essential oil monomers. We were studied the surface morphology of the coatings by using SEM and AFM to obtain the relation between the surface quality and the antibacterial activity. Our antimicrobial coatings can be adapted in biomedical devices and implants in order to minimize the infections and associated implant malfunctions. 336 (12_PP19) Generation of Linalool Thin Films by Plasma Polymerization F. Kaplan1, K. Çakmak2, Ö. Bayram3, Ö. Şimşek4, A. Mavi5, R. Kotan6 1 Atatürk University, Department of Chemistry Education, Erzurum, Turkey, fatma.kaplan@atauni.edu.tr 2 Atatürk University, Department of Chemistry Education, Erzurum, Turkey, kenan.cakmak@ogr.atauni.edu.tr 3 Bayburt University, Department of Materials Science and Nanotechnology Engineering, Bayburt, Turkey, obayram@bayburt.edu.tr 4 Atatürk University, Department of Physic Education, Erzurum, Turkey, osimsek@atauni.edu.tr 5 Atatürk University, Department of Chemistry Education, Erzurum, Turkey, amavi@atauni.edu.tr 6 Atatürk University, Faculty of Agriculture, Erzurum, Turkey, rkotan@atauni.edu.tr Linalool is a natural compound generated by a various plants and well known as antimicrobial essential oil component. In this study we aimed to generate antimicrobial thin film of linalool on a glass substract by using RF (Radio Frequency) plasma polimerization in a chamber under Ar atmosphere. RF plasma system was conditioned at the room temperature and 500 mTorr with 15 or 20 W RF power for 10 or 15 minutes. Thin film was analysed by FTIR, SEM and AFM. Antimicrobial properties of the thin films were also investigated. 337 (12_PP20) Investigation of Electrical Properties of Polymeric Thin Films Obtained From Natural Sources Ö. Şimşek1 Ö. Bayram2, 1 Atatürk University, Department of Physic Education, Erzurum, Turkey, osimsek@atauni.edu.tr 2 Bayburt University, Department of Materials Science and Nanotechnology Engineering, Bayburt, Turkey, obayram@bayburt.edu.tr In this study, we aimed to obtain polymeric thin film coatings from 4-Mentha-1,8-dien-7-al essential oil compounds on a glass substrate by using RF (Radio Frequency) plasma polymerization. Glass substrates were first cleaned with hot distilled water and then cleaned in ultrasonic bath before they are placed in the vacuum chamber. During deposition Rf power was set to 50 watt and vacuum chamber pressure was kept at 400 mTorr. Surface morphology of the obtained films were investigated by using AFM and SEM. Electrical properties of the films were studied by means of UV-VIS spectroscopy. 338 (12_PP21) Design of Nanoparticles Loaded on Membrane for Remove of Trypan Blue Azo Dye from Water S. Çiçek1, A. A. Güngör2 and H. Nadaroğlu3 1 Atatürk University, Erzurum, Turkey, elhamra.387@gmail.com 2 Atatürk University, Erzurum, Turkey, aalayli@atauni.edu.tr 3 Atatürk University, Erzurum, Turkey, hnisa25@atauni.edu.tr In this study, it was aimed that removal of Trypan blue dye from water using nano-Fe3O4 immobilized on Luffa sponge (LS) membrane. Nano-Fe3O4 was obtained with green synthesis process by catalyzed of peroxidase enzyme which was purified from Euphorbia amygdaloides. LS was used as a support material and it was enviromental friendly, lightweight, natural fibers plant. Immobilization was performed by treatment solutions containing Fe3O4 nanoparticles with LS which was pretreated in ultrasonic bath for 1 hour. Then, the obtained membrane forms (pure-LS, Fe-NPs-LS) was dried in oven for 2 hours. These membranes were used for decolourisation of Trypan Blue solution which were prepared in the laboratory. Thanks to UV-visible spectrometric measurements, optimal contact time, pH, temperature, concentration of dye were determined 15 min, 7.0, 20 °C, 100 mg/L, respectively. The maximal efficiency of nano-Fe-LS membrane was observed at 5th min. Membrane forms are characterized with SEM and XRD. It was observed that immobilized NPs could be used effectually removal of azo dyes from waste water in this study. This study is supported by Scientific and Technical Research Council of Turkey (TUBITAK) scope of No.115Z810 research project. 339 (12_PP22) ZnO Nanoparticles Loaded on Membrane for Remove of Direct Blue 15 Azo Dye from Wastewater S. Çiçek1, H. Nadaroğlu2 and A. A. Güngör3 1 Atatürk University, Erzurum, Turkey, elhamra.387@gmail.com 2 Atatürk University, Erzurum, Turkey, hnisa25@atauni.edu.tr 3 Atatürk University, Erzurum, Turkey, aalayli@atauni.edu.tr In this study, it was aimed that removal of Direct blue 15 (DB15) dye from waste water using nano-ZnO immobilized on Luffa sponge (LS) membrane. Nano-ZnO was obtained with green synthesis process by catalyzed of peroxidase enzyme which was purified from Euphorbia amygdaloides. LS was used as a support material and it was environmental friendly, lightweight, natural fibers plant. Immobilization was performed by treatment solutions containing ZnO nanoparticles with LS which was pretreated in ultrasonic bath for 1 hour. Then, the obtained membrane forms (pure-LS, ZnO-NPs-LS) was dried in oven for 2 hours. These membranes were used for decolourization of DB15 solution which was prepared in the laboratory. Thanks to UV-visible spectrometric measurements, optimal contact time, pH, temperature and concentration of dye was determined 45 min, 8.0, 20 °C, 50 mg/L, respectively. The maximal efficiency of nano-ZnO-LS membrane was observed at 15th min. Membrane forms were characterized with SEM and XRD. It was observed that immobilized NPs could be used effectually removal of azo dyes from waste water in this study. This study is supported by Scientific and Technical Research Council of Turkey (TUBITAK) scope of No.115Z810 research project. 340 (12_PP23) A Study on Theoretical and Experimentical Spectroscopic Properties 3-(PMethoxybenzyl)-4-(3-Hydroxy-4-Methoxybenzylidenamino)-4,5-Dihydro-1h-1,2,4Triazol-5-One Şule Bahçeci1, Haydar Yüksek2, Nuri Yıldırım3, Murat Beytur2 1 Fatih Education Faculty, Karadeniz Technical University, Trabzon, Turkey, sbahceci@gmail.com 2 Department of Chemistry, Kafkas University, Kars, Turkey hhigh61@gmail.com, muratbeytur83@gmail.com 3 Department of Chemistry, Karadeniz Technical University, Trabzon, Turkey 3-(p-Methoxybenzyl)-4-(3-hydroxy-4-methoxybenzylidenamino)-4,5-dihydro-1H-1,2,4triazol-5-one compound was optimized by using the B3LYP/6-311G (d, p) and HF/6-311G (d, p) basis sets [1, 2]. 1H-NMR and 13C-NMR isotropic shift values were calculated by the method of GIAO using the program package Gaussian G09W [2]. Experimental [3] and theoretical values were inserted into the grafic according to equatation of δ exp=a+b. δ calc. The standard error values were found via SigmaPlot program with regression coefficient of a and b constants. IR absorption frequencies of analysed molecule were calculated by two methods. Then, they were compared with experimental data [3], which are shown to be accurate. Infrared spectrum was composed by using the data obtained from both methods. The veda4f program was used in defining IR data, which were calculated theoretically [4]. Additionally, this compound was found bond angles, bond lengths, the HOMO-LUMO energy and mulliken charges by using the B3LYP/6-311G (d) and HF/6-311G (d) basis sets. OH N CH H3CO OCH3 N N N O H Keywords: 4,5-dihydro-1H-1,2,4-triazol-5-one, GIAO, Gaussian G09W, B3LYP and HF 341 References: 1. Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). 2. Wolinski, K., Hilton, J.F., Pulay, P., J. Am. Chem. Soc., 112, 512, (1990). 3. Bahçeci, ġ., Yıldırım, N., Bazı Yeni 4,5-Dihidro-1H-1,2,4-triazol-5-on Türevlerinin Sentezi, Yapılarının Aydınlatılması, Antioksidan ve Asitlik Özelliklerinin Ġncelenmesi, KTÜ BAP Proje (2008.116.006.1), 2011. 4. Jamróz M.H., Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 342 (12_PP24) The Investigation of Experimental and Theoretical Spectroscopic Properties of 3Phenyl-4-[4-(Dimethylamino)Benzylidenamino]-4,5-Dihydro-1h-1,2,4-Triazol-5-One Compound Haydar Yüksek1, Şule Bahçeci2, Hilal Medetalibeyoğlu1 1 Department of Chemistry, Kafkas University, Turkey, Kars hhigh61@gmail.com, hilalmedet@gmail.com 2 Department of Chemistry, Karadeniz Technical University, Trabzon, Turkey, sbahceci@gmail.com The compound was optimized by using the B3LYP/6-31G (d,p) and HF/6-31G (d,p) basis sets [1, 2]. 1H-NMR and 13C-NMR isotropic shift values were calculated by the method of GIAO using the program package Gaussian G09 [2]. Experimental [3] and theoretical values were inserted into the grafic according to equatation of δ exp=a+b. δ calc. The standard error values were found via SigmaPlot program with regression coefficient of a and b constants. IR absorption frequencies of analysed molecule were calculated by two methods. The veda4f program, was used in defining IR data, which were calculated theoretically [4]. The experimental [3] and the obtained theoretical values were compared and found by regression analysis that are accurete. In addition to, Experimental [3] and theoretical UV-Vis values were calculated. N N N CH N(CH3)2 HN O Keywords: 1,2,4-triazol-5-one, basis sets, isotropic shift values, SigmaPlot and UV-Vis 343 References: References: 1. Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). 2. Wolinski, K., Hilton, J.F., Pulay, P., J. Am. Chem. Soc., 112, 512, (1990). 3. Bahçeci, ġ., Yıldırım, N., Bazı Yeni 4,5-Dihidro-1H-1,2,4-triazol-5-on Türevlerinin Sentezi, Yapılarının Aydınlatılması, Antioksidan ve Asitlik Özelliklerinin Ġncelenmesi, KTÜ BAP Proje (2008.116.006.1), 2011. 4. Jamróz M.H., Vibrational Energy Distribution Analysis: VEDA 4 program, Warsaw, (2004). 344 (12_PP25) Comparison of Experimental Values With Theoritical Spectral Values of 1-Acetyl-3Ethyl-4-(3-Acetoxy-4-Methoxybenzylidenamino)-4,5-Dihydro-1h-1,2,4-Triazol-5-One Şule Bahçeci1, Haydar Yüksek2, Nuri Yıldırım3, Murat Beytur2 1 Fatih Education Faculty, Karadeniz Technical University, Trabzon, Turkey, sbahceci@gmail.com 2 Department of Chemistry, Kafkas University, Kars, Turkey hhigh61@gmail. com, muratbeytur83@gmail.com 3 Department of Chemistry, Karadeniz Technical University, Trabzon, Turkey In this study, the 1-acetyl-3-ethyl-4-(3-hydroxy-4-methoxybenzylidenamino)-4,5-dihydro-1H1,2,4-triazol-5-one was optimized by using the B3LYP/6311G (d, p) and HF/6311G (d, p) basis sets [1,2]. Afterwards, 1H-NMR and 13C-NMR isotropic shift values were calculated by the method of GIAO using the program package Gaussian G09W [1]. Experimental [3] and theoretical values were inserted into the graphic according to equitation of δ exp=a+b. δ calc. The standard error values were found via SigmaPlot program with regression coefficient of a and b constants. IR absorption frequencies of analysed molecule were calculated by two methods. Then, they were compared with experimental data, which are shown to be accurate. The veda4f program, was used in defining IR data, which were calculated theoretically [4]. Furthermore, molecule’s theoretical bond lengths, bond angles, UV-Vis values, HOMOLUMO energies and total energy of the molecule for both methods were calculated. O CH2CH3 OC CH3 N O H3C N N=CH C N O Keywords: theoretically, 6311G, GIAO, total energy and veda4f 345 OCH3 References: 1. Frisch, M.J.; Trucks, G.W.; Schlegel, H.B.; Scuseria, G.E.; Robb, M.A.; Cheeseman, J.R., Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G.A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H.P.; Izmaylov, A.F.; Bloino, J.; Zheng, G.; Sonnenberg, J.L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J.A.; Jr.Vreven, T.; Peralta, J.E.; Ogliaro, F.; Bearpark, M.; Heyd, J.J.; Brothers, E.; Kudin, N.; Staroverov, V.N.; Kobayashi, R.; Normand, J., Raghavachari, K.; Rendell, A.; Burant, J.C.; Iyengar, S.S.; Tomasi J.; Cossi, M.; Rega, N.; Millam, J.M.; Klene, M.; Knox, J.E.; Cross J.B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R.E.; Yazyev, O.; Austin, A.J.; Cammi, R.; Pomelli, C.; Ochterski, J.W.; Martin; L.R.; Morokuma, K.; Zakrzewski, V.G.; Voth, G.A.; Salvador, P.; Dannenberg, J.J.; Dapprich, S.; Daniels A.D.; Farkas, O.; Foresman, J.B.; Ortiz, J.V.; Cioslowski, J.; and Fox, D.J. Gaussian Inc., Wallingford, CT., (2009). 2. Wolinski, K.; Hilton, J.F.; Pulay, P.; J. Am. Chem. Soc., 112, 512, (1990). 3. Bahçeci, ġ., Yıldırım, N., Bazı Yeni 4,5-Dihidro-1H-1,2,4-triazol-5-on Türevlerinin Sentezi, Yapılarının Aydınlatılması, Antioksidan ve Asitlik Özelliklerinin Ġncelenmesi, KTÜ BAP Proje (2008.116.006.1), 2011. 4. Jamróz M.H. Vibrational Energy Dist. Analysis: VEDA 4 program, 2004, Warsaw. 346 (12_PP26) Optimization for Design Variables of Helical Springs Made of Carbon Nanotube Additive Epoxy Composite Reinforced with Carbon Fiber Hamit Akbulut, Yahya Kara Atatürk University, Faculty of Engineering, Mechanical Engineering Department, Erzurum, Turkey, yahyakara06@gmail.com, akbuluth@atauni.edu.tr To successfully reduce weight of a mechanical or structural part by replacing steel with composite material, it is a principle to optimize the material parameters and design variables of the structure. In this study, we investigated the numerical methods for determining fatigue strength and spring rate of helical springs made of carbon nanotube/carbon fiber/epoxy composite, in which the material properties were found by using the micromechanics. The results obtained were compared with those of an equivalent steel one. After the dimensions of helical spring were chosen, the helix angle was calculated. With the elastic and shear modulus, using the equation of the spring rate with respect to the shear modulus and design variables, the normalized spring rates were obtained the %0.05 and %0.1 carbon nanotube addition. As a scope of the study, a finite element model for an optimal composite helical spring was developed and then the static spring rates were determined, the results obtained were compared with the analytical results. 347 (12_PP27) Microwave Pyrolysis and Roasting Depending on Dielectric Qualities of Coal Types and Iron Minerals Yıldırım İsmail Tosun Şırnak University, Engineering Faculty, Şırnak, Turkey Iron ores containing ferrous minerals and sulphide minerals are specifically as several times active in microwave. Pyrolysis of the coal usually requires iron minerals for activation step to both absorption microwave from the matrix of the sulphides and conduct the heat to coal for pyrolysis. In this investigation, the copper pyrite and coal pyrite was microwave roasted to oxidize both the sulphides and even the pyrolysis of coal. The effects were investigated by gravimetric and infrared analysis and the microwave absorption characteristics were quantified by determining the permittivities. The microwave heating behaviour studies showed that the sample temperature increased with increasing incident microwave power, processing time and sample mass. Due to the activity of the iron ore to the microwaves, a low incident power of 600W was found to be sufficient for roasting, as higher powers resulted in sintering and melting of the concentrate. The copper pyrite weight loss values after roasting were over 25% and these were similar to those obtained by conventional roasting. The main advantages of microwave roasting were that both the total pyrolysis rates and the heating rates were higher and the specific energy consumptions were lower than in coal pyrite. 348 (12_PP28) The Effects of Fuel Type in Synthesis of NiFe2O4 Nanoparticles by Microwave Assisted Combustion Method Zeynep Karcıoğlu Karakaş1* , Recep Boncukçuoğlu 1 and İbrahim H. Karakaş 2 1 Environmental Engineering Department, Atatürk University, Erzurum 25240, Turkey 2 Chemical Engineering Department, Bayburt University, Erzurum 69000, Turkey kzeynep@atauni.edu.tr In this study, it was investigated the effects of the used fuels on structural, morphological and magnetic properties of nanoparticles in nanoparticle synthesis with microwave assisted combustion method with an important method in quick, simple and low cost at synthesis of the nanoparticles. In this aim, glycine, urea and citric acid were used as fuel, respectively. The synthesised nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Brunauer-Emmet-Teller surface area (BET), and vibrating sample magnetometry (VSM) techniques. We observed that fuel type is quite effective on magnetic properties and surface properties of the nanoparticles. X-ray difractograms of the obtained nanoparticles were compared with standard powder diffraction cards of NiFe2O4 (JCPDS Card Number 54-0964). The results demonstrated that difractograms are fully compatible with standard reflection peaks. According to the results of the XRD analysis, the highest crystallinity was observed at nanoparticles synthesized with glycine. The results demonstrated that the nanoparticles prepared with urea has the highest surface area. The micrographs of SEM showed that all of the nanoparticles have nano-crystalline behaviour and particles indication cubic shape. VSM analysis demonstrated that the type of fuel used for synthesis is highly effective a parameter on magnetic properties of nanoparticles. Keywords : Nickel ferrite, synthesis, urea, glycine and citric acid 349 (12_PP29) A Novel Numerical Method for Second-Order Fuzzy Linear Boundary Value Problems E. Can 1, M. A. Bayrak 2 and B. Hiçdurmaz3 1 Istanbul Medeniyet University, Istanbul, Turkey, emine.can@medeniyet.edu.tr 2 Kocaeli University, Kocaeli, Turkey, aylin@kocaeli.edu.tr 3 Istanbul Medeniyet University, Istanbul, Turkey, betul.hicdurmaz@medeniyet.edu.tr In the present paper, a new method is proposed for solving fuzzy differential equations which are utilized for the modeling problems in science and engineering. Fuzzy approach is selected due to its important applications for processing uncertainty or subjective information on mathematical models of physical problems. A second-order fuzzy linear boundary value problem is considered in particular due to its important applications in physics. Moreover, numerical experiments are presented to show the effectiveness of the proposed numerical method on specific physical problems like heat conduction in an infinite plate with heat generation. 350 Author Index Name Surname Page Numbers Bahattin Abay 175, 179 Bensman Abdelhakim Hayet Si Abdelkader 280 Maryam Abdolahpour Salari 264 Selim Acar 244, 245 Mesut Acur 185 Ö. AçıĢlı 60 Aslı Asiye Ağıl 169 Nader Ahmadi 41, 143 Yunus Akaltun 66 Zafer Akan 106 Hamit Akbulut 347 Aykan Akça 170 Sevil Akçağlar 273, 274 Hüsameddin Akçay 133 Adem Akdağ 57, 69 Fatma Akdemir 141, 146, 147 Ömer Akgül 101, 102, 104 Can Ersen Akkan 187 Abdullah Akkaya 73, 194 Serkan Akkoyun 272 Harun AkkuĢ 63, 228, 229, 230 Ferdi Akman 141, 146, 147, 148, 150, 151, 155 Feride Akman 147 Canan Aksoy 99 Muhammed Yusuf Aktaç 129 Serkan AktaĢ 292, 293 351 Name Surname Page Numbers Bekir AktaĢ 23, 49, 70, 97, 103, 278, 279 Ali Can AktaĢ 97 H. Alaboz 45 N Alemdar 292 Fahhad Alharbı 51, 95 Ġrem Öner Alp 224, 225 Sebahaddin Alptekin 243, 263 H. Altan 45 ġemsettin Altındal 168, 189, 216, 217, 219, 220, 221, 222, 239, 249, 251, 252 Ferdi AltıntaĢ 30, 91 Ümit Alver 101, 102, 104 Hamit Alyar 153 Boutasta Amel 142 Gökhan Apaydın 33, 38, 159 Erdal Aras 89, 160 Ömür Aras 135 Aslı Araz 141, 146, 147 L. C Arslan 70, 278 Birol Artığ 79, 80, 82, 83 Mohannad Salih Asafi 112 Afsoun Ashkhası 62, 74, 164, 202, 247 Aykut Astam 188 Mansur AĢgın 208, 265 Emine Dilara Atalay 108 Selçuk Atalay 43 Yavuz Atasoy 253 Hasan Atçeken 100 352 Name Surname Page Numbers Gonca AteĢ 296 Aytunç AteĢ 173, 245 Fatih Atikol 132 Figen Ay 279 BüĢra Aydın Deliönü 153 Alev Aydıner 98 ġakir Aydoğan 64, 212, 213, 214, 215, 257, 258, 259 Yıldırım Aydoğdu 171, 172, 296, 297 AyĢe Aydoğdu 171, 172, 296, 297 Bünyamin Aygün 39, 77, 267 Gülnur Aygün 44, 52, 253 Fevzi Aytemiz 329, 330 Arda Aytimur 168 Enise Ayyıldız 73, 194 Emin Bacaksız 47, 253 Yosef Badali 219, 220, 221 Mehmet Bahat 152, 153, 154 ġule Bahçeci 327, 328, 341, 342, 343, 344, 345, 346 A. M. A Bakhaeet 227 Sezgin Bakırdere 287, 294 Elif Balkan 132 Ali Baltakesmez 167, 276, 277, 283 Özlem Barın 244 Ali Cemil BaĢaran 54, 70, 278, 279 Tunca BaĢaran 132 Tuğba Bayazıt 197 Cemile Baydere 155 AyĢe Bayrakceken Yurtcan 311, 312 353 Name Surname Page Numbers Özkan Bayram 299, 336, 337, 338 T. Bayram 272 Mahmut Bayramoğlu 135 Alpan Bek 20, 21 Kudret BektaĢ 291 Behiza Bilgen Benli 222 A. Benosman 142 Halil Berber 149 SavaĢ Berber 248 Halil Berberoğlu 89 Murat Beytur 32, 37, 319, 320, 321, 322, 341, 342, 345, 346 Necmi Bıyıklı 55 Mehmet Biber 226, 277, 283 K. Bilen 127 Hatice Bilge 289, 290 Gonca Bilge 89 Sema Bilge Ocak 237 Ahmet KürĢat Bilgili 231 Mustafa Tuğfan Bilkan 156, 157, 158 Çiğdem Bilkan 189, 249 Eda Bingöl 198, 199 Mehmet Bolat 131 Bouadjemı Bouabdellah 174 Ġsmail Hakkı Boyacı 89 Fatih Bozali 196, 197, 198, 199 Gamze Bozkurt 312 Ebru Bozkurt 310 Burcu Bozkurt Çırak 183, 184, 185,186 354 Name Surname Page Numbers Greg Brittles 99 Hayrunnisa Budak 202 Hasan Feyzi Budak 57, 69 Evren Buğa 295 Ertuğrul Osman Bursalıoğlu 294 M. ġahin Bülbül 116, 117, 119, 120 Merve Büyükaydın 57, 69 Emine Can 350 Murat Can 57, 69 Ezgi Canbek 195 Betül Canımkurbey 180 Marcelo Carıgnano 51 Erhan Cengiz 33, 38, 159 Mehmet Akif Ceviz 137 Fulya Esra Cimilli Çatır 204, 205, 206, 207 Esra Cinan 39, 144, 288 Ali CiriĢ 268 Cevdet CoĢkun 226 Ogün Çağlar 187 Bülent Çağlar 183, 184, 242, 295 Sema Çağlar 183, 184, 242 Mustafa Çağlar 242, 295 Tuba Çakıcı 250 Aydın Çakır 289 Banu Çakır 111 Bakiye Çakır 98 Tahir Çakır 79, 80 Kenan Çakmak 337 Selçuk Çakmak 30, 91 355 Name Surname Page Numbers Zakir Çaldıran 64, 212, 213, 214, 215, 257, 258, 259 Elif Berna Çalı 292 A. Çalık 235 Nursel Çatal 36 Ardan Çelik Ahmet Çelik 268, 269 Ayhan Çelik 333, 335 Yunus Çelik 134 Cemal Çetin 188 Betül Çetin 271 Uğur Çevik 268 Çağrı Çırak 183, 184, 185, 186, 295 Burcu Bozkurt Çırak 183, 184, 185, 186 Ali Çırpan 192 Semra Çiçek 339, 340 Yasemin Öztekin Çiftçi 224, 225 Ömer Çoban 68 Onur Çomaklı 333, 335 Tuğba Çorlu 245 Fatma Dadakdeniz 152 Fethi Dağdelen 296 Özlem Dağlı 154 Elif DaĢ 311 Bruno Daudın 24 Melike Dede 58, 178 Ümit Demir 309 Kübra Çınar Demir 226 Mehmet Demir 243 356 Name Surname Page Numbers Hacı ÖkkeĢ Demir 64 Demet Demir 40 Ümit DemirbaĢ 33 Y. Demirhan 45 Selim Demirtürk 133 CoĢkun Deniz 93, 94 Ali Rıza Deniz 64, 212, 213, 214, 215 Erdal Dikmen 78, 107 Serdar Dizman 111 Salih Doğan 242, 295 Hülya Doğan 59, 218 Seydi Doğan 203 Muhammet Doğan 33 Hilal Doğan 107 Tamer Doğan 293 Erdinç Doğancı 180 Ercan Doğancı 60 Ġlbilge Dökme 223 Songül Duman 62, 74, 164, 202, 203, 218, 247 ġeyda Duman 98 Rıdvan Durak 141,146, 147, 148, 150, 151, 270, 293 Ġsmail Faruk DurmuĢ 106, 111, 283, 284 Perihan DurmuĢ 239 Zehra DurmuĢ 49 H. DurmuĢ 100 Arife Efe 57, 69 Hasan Efeoğlu 56, 232, 261 Kadir Ejderha 162 Neslihan Ekinci 39, 143, 144, 270, 288 357 Name Surname Page Numbers Duygu Ekinci 212, 213, 214, 215 Ali Ercan Ekinci 185, 186 Aslı Elmaslı Akçar 301 Mert Elverici 295 Remziye Erbil 230 Bahattin Erdinç 58, 176, 177, 178 Erman Erdoğan 61, 72 Kamil Erkan 132 Merve ErtaĢ 70, 278 Birol Ertuğral 269 Mehmet Ertuğrul 36, 41, 143, 185 Salih Zeki Erzeneoğlu 164 Fırat Es 261 Kemal Efe Eseller 89 Özlen Ferruh Erdem 48 Belkıs Garip 116, 119 Kübra Gedik 183, 184 Arife Gencer Ġmer 50 Mustafa Fatih GeniĢel 65, 255, 256 A. Yu Goikhman 279 Rabia Gök 154 Neslihan Gökçek 46 Tolga Gönen 185 Chrıs Grovenor 99 Ġlhami Gülçin 22 Sena Gülen 52 Hüseyin Güllüce 136, 137, 138, 139 Yadigar Gülseven Sıdır 149 358 Name Surname Page Numbers Hakan GündoğmuĢ 169 Yavuz Güney 303, 305, 306, 307 Azize Alaylı Güngör 339, 340 Emre Gür 66, 68, 167, 211, 240 Aycan Gür 79, 80, 82, 83 Bekir Gürbulak 74, 164, 202, 203, 247 A. Gürbulak 62 Habib Gürbüz 133 Birol Gürol 125 Ali Gürol 40 Tülay Gürsoy 82 Özlem Gürsoy Kol 321, 322, 325, 326 Hande Gürsoytrak 125 Betül Güzeldir 166, 181, 182, 193, 233, 234, 236, 260, 264 Mohd Nizar Bin Hamidon 17 Oday Hammadi 75 Gökhan Haseki 208 A. Samet HaĢıloğlu 127, 135 Necati Hırça 115 Houda Imane Faraoun 280 Alı Ahmed Issa 256 Sadna IĢık 68 Orhan Ġçelli 238, 281, 287 E. Ġgman 336 Tuba Ġkiz 304 Ümit Ġncekara 257 Raka Jovanovıc 95 Mustafa Recep Kaçal 147, 148, 150, 151, 155 359 Name Surname Page Numbers Hatice KaçuĢ 212, 213, 214, 215 Firas J. Kadhim 75 Sabre Kaıs 51, 95 Yashar Azizian Kalandaragh 249 Ahmet Tahir KalkıĢım 127 Osman Kalmaz 237 Bekir Sıtkı Kandemir 46 Ġmran Kanmaz 182, 234 Mecit Kantarcı 292 Halit Kantekin 33 Fatma Kaplan 337 Yahya Kara 347 YaĢar Karabul 281, 294 Bünyamin Karabulut 31, 33, 134 Kazım Karabulut 33, 38, 159 Abdülkerim Karabulut 55 Abdülhalik Karabulut 77, 267 Abide Halide Karadağ 89 Irmak Karaduman 245 Mustafa Karakaya 145 Rıdvan Karapınar 282 Ayben Karasu Uysal 85, 86 Özgül KarataĢ 160 Zeynep Karcıoğlu KarakaĢ 349 ġükrü KarataĢ 169 Faruk KardaĢ 313, 314 Nurdan Karpuz 271 Süleyman Karslı 136, 137, 138, 139 Engin Kavaklı 183, 184 360 Name Surname Page Numbers Mesut Kaval 176, 178 Hüseyin Kavas 49 Esra Kavaz 39, 41, 143, 144, 270, 288 Gamze Kaya 219, 220, 221 Ferhat Kaya 136, 137, 138, 139 Mehmet Kaya 97 Kamil Kaya 97 Gönül Kemikler 289, 290 Süleyman Kerli 101, 103, 104 Recep Keser 111 Eyüp Fahri Keskenler 71, 196, 197, 198, 199, 209, 210 Onur Keskin 302, 303 Muhammad K. Khala 74 Ahmet Kılıç 160 Bayram Kılıç 195, 208, 265 Mehmet Kılıç 281 Hamdi ġükür Kılıç 100 Tahsin Kılıçoğlu 256 Tuba Kılınç 185, 186 Dilruba Kıran 270 Ömer Kızılkan 128 Joachım Klaer 47 CoĢkun KocabaĢ 25, 241, 262 Bayram Kocaman 70, 278 Yusuf Koçak 66 Adem Koçyiğit 163 Özlem Korkut 292, 293 Turgay Korkut 77, 267 361 Name Surname Page Numbers Abdülkadir Korkut 50 Murat Korun 130 Gül Kotan 313, 314, 315, 316, 317, 318 Bahadır Koz 269 Pınar Köç 240, 241, 262 Mediha Kök 171, 172, 296, 297 Ali Kökce 216, 217 Oğuz Kağan Köksal 33, 38, 159 Arif Kösemen 180 Mutlu Kundakçı 61, 72, 75 Galina S. Kupriyanova 279 Hüseyin Kurt 26 Bingül Kurt Urhan 309 Sinem Vahide Kurudirek 226 Bülent Kutlu 170 Abdurrahman Kuzhan 291 Selin Küp 182, 234 Hyun Kyu Shın 334 Havva Elif Lapa 216, 217 Mohammed Lawal 227 Aytaç Levet 35 Ammarıa Mahmoudi 280 Roland Maınz 47 Sevda Manap 323, 324 Asım Mantarcı 61, 72 Ahmad Razı Mat Isa 227 Ahmet Mavi 164, 337 Hilal Medetalibeyoğlu 323, 324, 325, 326, 327, 328, 329, 330, 331, 332, 343, 344 362 Name Surname Page Numbers Ghouti Merad 280 Kadem Meral 310 Günay Merhan Muğlu 211 Fatma Meydaneri Tezel 187 Sibel Morkoç Karadeniz 185, 186 Tayebeh Mousavı 99 Auwalu Musa 227 Özgür Esat Müstecaplıoğlu 30, 91 Hayrunnisa Nadaroğlu 339, 340 ġefik Nardalı 145 M. Salih Nas 82 Ġlham Nasıroğlu 307 Yahya Nasolo 301 Tuğba Selcen Navruz 130 M. A. Nebioğlu 45 Hacali Necefoğlu 37 Vagıf Nevruzoğlu 71, 196, 197, 198, 199, 209 Mohammad Shameonı Nıaeı 303 Afsoun Nikravan 219, 220, 221 Emine Nuroğlu 287 Yusuf Selim Ocak 65, 255, 256 Recai OktaĢ 134 Özlem Oktay 117 Murat Okutan 281, 289, 290 Mehmeti Ali Olğar 47, 253 Yavuz Onganer 310 363 Name Surname Page Numbers Z. Onuk 196 Ġkram Orak 163, 168, 189, 216, 217 Abdullah Oran 88 Elif Orhan 237 Zeynep Orhan 260 Duygu Orhan 265 Ziya Orhan 283 Ġbrahim Ozdur 88 Sarper Ozharar 88 Ahmet Örnek 165 Serhat Öz 226 Oğuzhan Özakın 166, 234,236, 260 Ahmet Numan Özakın 136, 137, 138, 139 Nefise Özalp 269 Akif Özbay 154 Fikriye ġeyma Özçelik 62, 202, 203, 218, 247 Mehtap Özdemır Koklu 44, 52 Evren Görkem Özdemir 155 A. Faruk Özdemir 235 Yüksel Özdemir 35, 36, 41, 143, 144, Abdülkadir Özer 312 Furkan Tahir Özer 187 Oğuz Can Özer 208 Metin Özer 231 Zeynep Elif ÖzerbaĢ 261 Tuba Öznülüer 309 Göktürk Öztürk 71, 209, 210 364 Name Surname Page Numbers Oguz Öztürk 78 Yavuz Öztürk 103 Hülya Öztürk Doğan 309 DoğuĢ Özuyar 124 Lütfi Özyüzer 44, 45, 52, 253 Na-Ra Park 334 Reynıer Peletier 304 GülĢen Pirbudak 149 Sevgi Polat Altıntas 246 Djeltı Redouan 174 C Sabah 45 M. Ali Saeed 227 Mustafa Sağlam 166, 181, 182, 193, 204, 205, 206, 207, 233, 234, 236, 250, 260, 264 Mustafa Erdem Sağsöz 109, 110, 292, 293 Rıza Salar 120 Bentata Samir 174 Sait Eren San 18, 19, 180 Vınothını Sangaralıngam 124 Rıdvan Saraçoğlu 129 Sibel Sarıaydın 106 Devrim Sarıbal 294 Mehmet Nurullah Seçuk 63, 228, 229, 230 Alexey Sergev 95 Pablo Serra 51 Yusuf Sert 81 Banu Sezer 89 Cyrus Shafaı 68 365 Name Surname Page Numbers Hyun Kuyu Shın 334 Hon Chung Shin 334 Ġsa Sıdır 149 Değer Sofuoğlu 123 Fethi Soyalp 67, 200, 201, 254 Ümmügülsüm Soykan 43 Yusuf Soyvural 254 Ömer Söğüt 159 Erdal Sönmez 57, 69 Susannah Speller 99 Ian R, Stevens 124 Hakan Sürel 245 Yasemin ġafak Asar 251, 252 Mehmet ġahin 128, 129, 131 Yılmaz ġahin 259 Erdem ġakar 40 Mehmet ġata 62, 74, 164, 247 Ebru ġenadım Tüzemen 218 Elvan ġenarslan 193, 264 Melike ġenel 172 Nurettin ġenyer 134 Önder ġimĢek 299, 336, 337, 338 Derya ġimĢek 299 T Takan 45 Ġsmail Tarhan 108 Ayça Tanrıverdi 101, 102, 104 Bora TaĢ 108, 113, 285, 286, 289, 290 Ahmet TaĢer 166, 182, 236, 260 M.E TaĢgın 20, 21 366 Name Surname Page Numbers Lütfi Bilal TaĢyürek 259 Mustafa ReĢit Tavus 134 Mustafa Tekpınar 112 Cabir Terzioğlu 246 Engin TıraĢoğlu 33 Feyzi Sinan Tokalı 331, 332 Sibel Tokdemir Öztürk 113, 285, 286 Ozan Toker 294 R Topkaya 23 Murat TokuĢ 65 Murat Tomakin 71, 196, 197, 198, 199, 209 Ahmet Tombak 50, 65, 256 Mustafa Topaksu 293 Cihan Topcu 183, 184, 242 Levent Toppare 192 Yıldırım Tosun 348 RaĢit Turan 261 Ümit Turgut 121 Güven Turgut 57, 69, 74, 210 Mehmet Fatih Turhan 147, 148, 150, 151 Abdülmecit Türüt 55, 59, 162, 204, 205, 206, 207 Sebahattin Tüzemen 27, 68, 167, 240, 262, 276, 277 Fatih Ucun 145 Nazım Uçar 235 Gökay Uğur 201 Güventürk Uğurlu 32, 37, 319, 320, 321, 322 Songül Ulufer 325, 326 Özlem Ulusoy 39, 144, 288 Seda Ulusoy 52 367 Name Surname Page Numbers Thomas Unold 47 Ġbrahim Uslu 168, 219, 220, 221, 222 Nilüfer Uslu Uzun 255 Ġpek Ülfet 195 H.E Ünalan 20, 21 Ahmet Üner 180 Ġbrahim Saim Ünver 49 Songül Üstündağ 248 Morteza Vafadar 56, 232 Necati Vardar 86 Ahi Batuhan Vural 187 Ö. Vural 223 L.K. Wee 120 Wolf Weyrıch 40 Gemma Whıttaker 124 Özlem Yağcı 238 Zehra Deniz Yakıncı 171, 172, 297 Sefır Yamina 174 Fırat Yavuzer 187 Mustafa Yazıcı 333, 335 Gültekin Yeğin 106 Celal Yelgel 53 Sinan Kaan Yerli 302, 303, 306 Cahit YeĢilyaprak 302, 303, 304, 305, 306 Ali Fatih Yetim 333, 335 Tuba Yetim 333, 335 Nuri Yıldırım 341, 342, 345, 346 Mert Yıldırım 239 368 Name Surname Page Numbers Nezir Yıldırım 59, 162 M. Ali Yıldırım 173, 245 Ġlkay Yıldırım 31, 34, 134 Ahmet Yıldırım 112 Dilber Esra Yıldız 190, 191, 192, 244 Kübra Yıldız 70, 278 Ali Yıldız 118 Faruk Yılmaz 180 Mehmet Yılmaz 186, 258, 259 ġeyda Yılmaz 247 Adnan Yılmaz 111 Nevzat Yiğit 119 Fatih Yiğiterol 190 Özlem AktaĢ YokuĢ 317, 318 ġenay Yurdakul 156, 157, 158 Mustafa Tolga Yurtcan 43, 299, 336 Aziz Rasim Yusuf 106 Hürriyet Yüce 44 Haydar Yüksek 32, 37, 313, 314, 315, 316, 317, 318, 319, 320, 321, 322, 323, 324, 325, 326, 327, 328, 329, 330, 331, 332, 341, 342, 343, 344, 345, 346 Zakir Yüksek Mehmet Yüksel 293 Saniye Yüksel 269 Mehmet Bilgehan Yüksel 106 Funda Yüzlükoğlu 303 Aziz Zoubır 174 369

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