MICROWAVE CORPORATION
HMC286
v01.0401
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC286 is ideal for:
2.4 GHz LNA
• BlueTooth
Noise Figure: 1.8 dB
• Home RF
Gain: 17 dB
• 802.11 WLAN Radios
Single Supply: +3V
• PCMCIA Platforms
No External Components
Ultra Small SOT26 Package
Functional Diagram
General Description
The HMC286 is a low cost Low Noise Amplifier (LNA)
for 2.3 to 2.5 GHz spread spectrum applications. The
LNA provides 17 dB of gain and a 1.8 dB noise figure
from a single positive +3V power supply that consumes
only 8mA. The typical output 1 dB compression point
is +5 dBm and OIP3 is +13 dBm at 2.4 GHz. The compact LNA design utilizes on-chip matching for repeatable gain and noise figure performance. In addition,
eliminating the external matching circuitry also reduces
the overall size of the LNA function. The HMC286 was
designed to meet the size constraints of PCMCIA platforms and uses the SOT26 package that occupies
0.118” x 0.118”, which makes it a small fully integrated
solution that can be easily implemented with other 2.4
GHz ASICs.
Electrical Specifications, TA = +25° C, Vdd= +3V
Parameter
Min.
Frequency Range
Gain
Max.
2.3 - 2.5
14
Units
GHz
17
19
dB
Gain Variation Over Temperature
0.025
0.035
dB/°C
Gain Flatness
±0.5
Noise Figure
1.8
dB
3.0
dB
Input Return Loss
6
10
dB
Output Return Loss
6
9
dB
Output 1 dB Compression (P1dB)
0
5
dBm
Output Third Order Intercept (IP3)
10
13
dBm
Supply Current (Idd)
8 - 22
Typ.
8
12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
mA
HMC286
v01.0401
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
GaAs Gain
MMIC
SUB-HARMONICALLY
PUMPED Noise
MIXER
17
Broadband
& Return
Loss
Broadband
Figure
20
8
4
15
3.5
5
0
NOISE FIGURE (dB)
S21
S11
S22
-5
-10
-15
-20
3
2.5
2
1.5
1
-25
0.5
-30
-35
1.6
1.8
2
2.2
2.4
2.6
2.8
0
1.6
3
1.8
2
FREQUENCY (GHz)
2.2
2.4
2.6
20
4
19
3.5
+25 C
-40 C
+85 C
NOISE FIGURE (dB)
18
GAIN (dB)
17
16
15
14
13
+25 C
+85 C
-40 C
12
2.3
2.4
3
2.5
2
1.5
1
0.5
11
2.5
0
2.2
2.6
2.3
FREQUENCY (GHz)
2.5
2.6
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-40 C
-5
-10
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
2.4
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-15
-20
-25
-30
-35
2.2
3
Noise Figure vs. Temperature
Gain vs. Temperature
10
2.2
2.8
FREQUENCY (GHz)
AMPLIFIERS - SMT
10
RESPONSE (dB)
- 25 GHz
2.3
2.4
FREQUENCY (GHz)
2.5
2.6
-5
-10
+25 C
+85 C
-40 C
-15
-20
2.2
2.3
2.4
2.5
2.6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 23
MICROWAVE CORPORATION
HMC286
v01.0401
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
8
GaAs
MMIC
SUB-HARMONICALLY Power
PUMPED
MIXER 17
25
Output
P1dB
vs. Temperature
Compression@
2.4 -GHz
15
GHz
25
POUT(dBm), GAIN (dB)
20
P1dB (dBm)
AMPLIFIERS - SMT
10
5
0
-40 C
+85 C
+25 C
-5
2.2
2.3
2.4
2.5
10
Gain
Output Power
5
0
-5
-10
-30
2.6
-25
FREQUENCY (GHz)
-10
-5
-25
REVERSE ISOLATION (dB)
THIRD ORDER INTERCEPT (dBm)
-15
Reverse Isolation vs. Temperature
Output IP3 vs. Temperature
15
10
+ 25 C
+ 85 C
- 40 C
5
0
1.8
-20
INPUT POWER (dBm)
20
2
2.2
2.4
2.6
FREQUENCY (GHz)
8 - 24
15
2.8
3
+25 C
+85 C
-30
-40 C
-35
-40
-45
-50
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
2.6
MICROWAVE CORPORATION
HMC286
v01.0401
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
Absolute Maximum Ratings
+7 Vdc
Input Power
0 dBm
Channel Temperature (Tc)
175°C
Continuous Pdiss (Ta = 85°C)
(derate 6.35 mW/°C above 85°C)
572 mW
Storage Temperature
-65 to +150°C
Operating Temperature
-40 to +85°C
8
AMPLIFIERS - SMT
Supply Voltage (Vdd)
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 25
MICROWAVE CORPORATION
v01.0401
HMC286
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
Evaluation PCB
AMPLIFIERS - SMT
8
List of Material
Item
Description
J1, J2
PC Mount SMA Connector
J3, J4
DC Pin
U1
HMC286 Amplifier
PCB*
Evaluation Board 1.6” x 1.5”
The circuit board used in the final application should use
RF circuit design techniques. Signal lines should have 50
ohm impedance while the package ground leads should be
connected directly to the ground plane similar to that shown
above. A sufficient number of VIA holes should be used to
connect the top and bottom ground planes. The evaluation
circuit board shown is available from Hittite upon request.
*Circuit Board Material: Roger 4350
8 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0401
HMC286
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
8
AMPLIFIERS - SMT
Notes:
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 27