KSC1815 NPN Epitaxial Silicon Transistor

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KSC1815
KSC1815
Audio Frequency Amplifier & High
Frequency OSC
• Complement to KSA1015
• Collector-Base Voltage : VCBO= 50V
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
60
Units
V
VCEO
VEBO
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
IC
Collector Current
V
150
mA
IB
Base Current
50
mA
PC
Collector Power Dissipation
400
mW
TJ
Junction Temperature
125
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB=60V, IE=0
IEBO
Emitter Cut-off Current
VEB=5V, IC=0
hFE1
hFE2
DC Current Gain
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=100mA, IB=10mA
VBE (sat)
Base-Emitter Saturation Voltage
IC=100mA, IB=10mA
fT
Current Gain Bandwidth Product
VCE=10V, IC=1mA
Min.
Typ.
70
25
Max.
0.1
Units
µA
0.1
µA
700
0.1
0.25
V
1.0
V
80
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
2.0
3.0
pF
NF
Noise Figure
VCE=6V, IC=0.1mA
RS=10kΩ, f=1Hz
1.0
1.0
dB
hFE Classification
Classification
O
Y
GR
L
hFE1
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC1815
Typical Characteristics
100
100
VCE=6V
IB = 350µA
80
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
IB = 400µA
IB = 300µA
IB = 250µA
60
IB = 200µA
IB = 150µA
40
IB = 100µA
20
IB = 50µA
10
1
0.1
0.0
0
0
4
8
12
16
20
0.2
hFE, DC CURRENT GAIN
VCE = 6V
1000
10
100
1.0
1.2
1000
10000
IC=10IB
VBE(sat)
1000
VCE(sat)
100
10
1
IC[mA], COLLECTOR CURRENT
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
f=1MHz
IE=0
10
1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Output Capacitance
©2002 Fairchild Semiconductor Corporation
1000
fT[MHz],
CURRENT GAIN-BANDWIDTH PRODUCT
100
Cob[pF], CAPACITANCE
0.8
Figure 2. Transfer Characteristic
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
Figure 1. Static Characteristic
10
0.6
VBE[V], BASE-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
0.4
VCE =6V
100
10
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A2, September 2002
KSC1815
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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