共 82 篇
1. High-power Er:Yb fiber laser with very high numerical aperture pump-cladding
waveguide. By: Bouwmans, G.; Percival, R. M.; Wadsworth, W. J.; Knight, J. C.;
Russell, P. St. J.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p817, 2p; DOI:
10.1063/1.1596378; (AN 10404959)
2. Experimental investigation of single voxels for laser nanofabrication via two-photon
photopolymerization. By: Sun, Hong-Bo; Maeda, Makoto; Takada, Kenji; Chon, James
W. M.; Gu, Min; Kawata, Satoshi. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5,
p819, 3p; DOI: 10.1063/1.1598293; (AN 10404958)
3. Demonstration of finite-aperture tapered unstable resonator lasers. By: Bedford,
Robert; Schillgalies, Marc; Fallahi, Mahmoud. Applied Physics Letters, 8/4/2003,
Vol. 83 Issue 5, p822, 3p; DOI: 10.1063/1.1598292; (AN 10404957)
4. Fiber-coupled erbium microlasers on a chip. By: Yang, Lan; Armani, D. K.; Vahala, K.
J.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p825, 2p; DOI:
10.1063/1.1598623; (AN 10404956)
5. Thermal bias operation in electro-optic polymer modulators. By: Park, Suntak; Ju, Jung
Jin; Do, Jung Yun; Park, Seung Koo; Lee, Myung-Hyun. Applied Physics Letters,
8/4/2003, Vol. 83 Issue 5, p827, 3p; DOI: 10.1063/1.1596377; (AN 10404955)
6. Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric
distributed Bragg reflectors. By: Tawara, Takehiko; Gotoh, Hideki; Akasaka, Tetsuya;
Kobayashi, Naoki; Saitoh, Tadashi. Applied Physics Letters, 8/4/2003, Vol. 83 Issue
5, p830, 3p; DOI: 10.1063/1.1596728; (AN 10404954)
7. Enhanced thermal stability of laser diodes with shape-engineered quantum dot
medium. By: Tokranov, V.; Yakimov, M.; Katsnelson, A.; Lamberti, M.; Oktyabrsky, S..
Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p833, 3p; DOI:
10.1063/1.1598645; (AN 10404953)
8. Surface plasmon resonance on microaperture vertical-cavity surface-emitting laser
with metal grating. By: Shinada, Satoshi; Hashizume, Jiro; Koyama, Fumio. Applied
Physics Letters, 8/4/2003, Vol. 83 Issue 5, p836, 3p; DOI: 10.1063/1.1597979; (AN
10404952)
9. Phase-coherent multicolor femtosecond pulse generation. By: Kobayashi, Yohei;
Takada, Hideyuki; Kakehata, Masayuki; Torizuka, Kenji. Applied Physics Letters,
8/4/2003, Vol. 83 Issue 5, p839, 3p; DOI: 10.1063/1.1598651; (AN 10404951)
10. Synthesis and characterization of composition-spread (Sr,Ca)[sub 2]CuO[sub 3] thin
films with high third-order optical nonlinearity. By: Ohtani, M.; Fukumura, T.; Sakurada,
H.; Nishimura, J.; Kawasaki, M.; Makino, T.; Yamamoto, K.; Segawa, Y.. Applied
Physics Letters, 8/4/2003, Vol. 83 Issue 5, p842, 3p; DOI: 10.1063/1.1597411; (AN
10404950)
11. Frequency-doubled diode laser for ultraviolet absorption spectroscopy at 325 nm. By:
Laurila, Toni; Hernberg, Rolf. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5,
p845, 3p; DOI: 10.1063/1.1598285; (AN 10404949)
12. Continuously tunable and coherent terahertz radiation by means of phase-matched
difference-frequency generation in zinc germanium phosphide. By: Shi, Wei; Ding,
Yujie J.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p848, 3p; DOI:
10.1063/1.1596730; (AN 10404948)
13. Ultrafast nonlinear response of AlGaAs two-dimensional photonic crystal waveguides.
By: Bristow, A. D.; Wells, J.-P. R.; Fan, W. H.; Fox, A. M.; Skolnick, M. S.; Whittaker,
D. M.; Tahraoui, A.; Krauss, T. F.; Roberts, J. S.. Applied Physics Letters, 8/4/2003,
Vol. 83 Issue 5, p851, 3p; DOI: 10.1063/1.1598647; (AN 10404947)
14. Radio-frequency-driven near atmospheric pressure microplasma in a hollow slot
electrode configuration. By: Yu, Zengqi; Hoshimiya, Katsumi; Williams, John D.;
Polvinen, Steven F.; Collins, George J.. Applied Physics Letters, 8/4/2003, Vol. 83
Issue 5, p854, 3p; DOI: 10.1063/1.1564640; (AN 10404946)
15. Photoluminescence in tensile-strained Si type-II quantum wells on bulk single-crystal
SiGe substrates. By: Sheng, S. R.; Rowell, N. L.; McAlister, S. P.. Applied Physics
Letters, 8/4/2003, Vol. 83 Issue 5, p857, 3p; DOI: 10.1063/1.1597413; (AN 10404945)
16. Atomic arrangement at the AlN/Si (111) interface. By: Liu, R.; Ponce, F. A.; Dadgar, A.;
Krost, A.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p860, 3p; DOI:
10.1063/1.1597749; (AN 10404944)
17. A critical examination of the P–h[sup 2] relationship in nanoindentation. By: Troyon, M.;
Martin, M.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p863, 3p; DOI:
10.1063/1.1596384; (AN 10404943)
18. Investigation of radiative recombination from Mn-related states in Ga[sub 1-x]Mn[sub
x]As. By: Teran, F. J.; Zhao, L. X.; Patanè, A.; Campion, R. P.; Foxon, C. T.; Eaves, L.;
Gallagher, B. L.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p866, 3p; DOI:
10.1063/1.1597750; (AN 10404942)
19. Comparison of Cu electromigration lifetime in Cu interconnects coated with various
caps. By: Hu, C.-K.; Gignac, L.; Liniger, E.; Herbst, B.; Rath, D. L.; Chen, S. T.; Kaldor,
S.; Simon, A.; Tseng, W.-T.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5,
p869, 3p; DOI: 10.1063/1.1596375; (AN 10404941)
20. Strain analysis of a quantum-wire system produced by cleaved edge overgrowth using
grazing incidence x-ray diffraction. By: Sztucki, M.; Schülli, T. U.; Metzger, T. H.;
Chamard, V.; Schuster, R.; Schuh, D.. Applied Physics Letters, 8/4/2003, Vol. 83
Issue 5, p872, 3p; DOI: 10.1063/1.1597962; (AN 10404940)
21. Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator
layers. By: Drake, T. S.; Chléirigh, C. Nı; Lee, M. L.; Pitera, A. J.; Fitzgerald, E. A.;
Antoniadis, D. A.; Anjum, D. H.; Li, J.; Hull, R.; Klymko, N.; Hoyt, J. L.. Applied
Physics Letters, 8/4/2003, Vol. 83 Issue 5, p875, 3p; DOI: 10.1063/1.1598649; (AN
10404939)
22. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. By: Nam, K.
B.; Nakarmi, M. L.; Li, J.; Lin, J. Y.; Jiang, H. X.. Applied Physics Letters, 8/4/2003,
Vol. 83 Issue 5, p878, 3p; DOI: 10.1063/1.1594833; (AN 10404938)
23. Photochromic effect in magnesium-doped α-Al[sub 2]O[sub 3] single crystals. By:
Tardıo, M.; Ramırez, R.; González, R.; Chen, Y.; Kokta, M. R.. Applied Physics
Letters, 8/4/2003, Vol. 83 Issue 5, p881, 3p; DOI: 10.1063/1.1597963; (AN 10404937)
24. Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen
gas ambient. By: Kosugi, Ryoji; Fukuda, Kenji; Arai, Kazuo. Applied Physics Letters,
8/4/2003, Vol. 83 Issue 5, p884, 3p; DOI: 10.1063/1.1598621; (AN 10404936)
25. Optical and structural anisotropy of InP/GaInP quantum dots for laser applications. By:
Manz, Y. M.; Christ, A.; Schmidt, O. G.; Riedl, T.; Hangleiter, A.. Applied Physics
Letters, 8/4/2003, Vol. 83 Issue 5, p887, 3p; DOI: 10.1063/1.1598290; (AN 10404935)
26. Lattice parameter and energy band gap of cubic Al[sub x]Ga[sub y]In[sub 1-x-y]N
quaternary alloys. By: Marques, M.; Teles, L. K.; Scolfaro, L. M. R.; Leite, J. R.;
Furthmüller, J.; Bechstedt, F.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5,
p890, 3p; DOI: 10.1063/1.1597986; (AN 10404934)
27. Retrieval of the complex permittivity of spherical nanoparticles in a liquid host material
from a spectral surface plasmon resonance measurement. By: Saarinen, Jarkko J.;
Vartiainen, Erik M.; Peiponen, Kai-Erik. Applied Physics Letters, 8/4/2003, Vol. 83
Issue 5, p893, 3p; DOI: 10.1063/1.1598288; (AN 10404933)
28. Domain of CuPt[sub B]-type and CuAu–I-type ordered structures in highly strained
Cd[sub x]Zn[sub 1-x]Te/ZnTe heterostructures. By: Lee, H. S.; Lee, J. Y.; Kim, T. W.;
Park, H. L.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p896, 3p; DOI:
10.1063/1.1599966; (AN 10404932)
29. Structure and bulk modulus of M[sub 2]AlC (M=Ti, V, and Cr). By: Sun, Zhimei; Ahuja,
Rajeev; Li, Sa; Schneider, Jochen M.. Applied Physics Letters, 8/4/2003, Vol. 83
Issue 5, p899, 3p; DOI: 10.1063/1.1599038; (AN 10404931)
30. Transition from three- to two-dimensional growth in strained SrRuO[sub 3] films on
SrTiO[sub 3](001). By: Sánchez, F.; Garcıa-Cuenca, M. V.; Ferrater, C.; Varela, M.;
Herranz, G.; Martınez, B.; Fontcuberta, J.. Applied Physics Letters, 8/4/2003, Vol. 83
Issue 5, p902, 3p; DOI: 10.1063/1.1599040; (AN 10404930)
31. Investigation of boron diffusion in 6H-SiC. By: Gao, Y.; Soloviev, S. I.; Sudarshan, T.
S.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p905, 3p; DOI:
10.1063/1.1598622; (AN 10404929)
32. Evidence of the Meyer–Neldel rule in InGaAsN alloys and the problem of determining
trap capture cross sections. By: Johnston, Steven W.; Crandall, Richard S.; Yelon,
Arthur. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p908, 3p; DOI:
10.1063/1.1596713; (AN 10404928)
33. Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1
eV optical excitation. By: Sun, Chi-Kuang; Chen, Yen-Hung; Shi, Jin-Wei; Chiu, Yi-Jen;
Gan, Kian-Giap; Bowers, John E.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue
5, p911, 3p; DOI: 10.1063/1.1595131; (AN 10404927)
34. Effect of high temperature and interface treatments on photoluminescence from
InGaN/GaN multiple quantum wells with green light emissions. By: Liu, W.; Chua, S.
J.; Zhang, X. H.; Zhang, J.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p914,
3p; DOI: 10.1063/1.1597990; (AN 10404926)
35. Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition. By:
Lee, Jae-Hoon; Hahm, Sung-Ho; Lee, Jung-Hee; Bae, Sung-Bum; Lee, Kyu-Seok;
Cho, Yong-Hoon; Lee, Jong-Lam. Applied Physics Letters, 8/4/2003, Vol. 83 Issue
5, p917, 3p; DOI: 10.1063/1.1597423; (AN 10404925)
36. Magnetism in Mn-doped ZnO bulk samples prepared by solid state reaction. By: Han,
S-J.; Jang, T.-H.; Kim, Y. B.; Park, B.-G.; Park, J.-H.; Jeong, Y. H.. Applied Physics
Letters, 8/4/2003, Vol. 83 Issue 5, p920, 3p; DOI: 10.1063/1.1597414; (AN 10404924)
37. Interstitial H and H[sub 2] in SiC. By: Kaukonen, M.; Fall, C. J.; Lento, J.. Applied
Physics Letters, 8/4/2003, Vol. 83 Issue 5, p923, 3p; DOI: 10.1063/1.1598646; (AN
10404923)
38. Effect of boron neutralization on interface state creation after direct tunneling injections
at 100 °C in 2,3-nm ultrathin gate oxides. By: Zander, D.; Boch, J.; Saigné, F.;
Meinertzhagen, A.; Simonetti, O.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5,
p926, 2p; DOI: 10.1063/1.1598291; (AN 10404922)
39. Interface recombination velocity of silicon-on-insulator wafers measured by microwave
reflectance photoconductivity decay method with electric field. By: Kuwayama, Toshio;
Ichimura, Masaya; Arai, Eisuke. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5,
p928, 3p; DOI: 10.1063/1.1597988; (AN 10404921)
40. Hydrogenation of Si from SiN[sub x](H) films: Characterization of H introduced into the
Si. By: Jiang, Fan; Stavola, Michael; Rohatgi, A.; Kim, D.; Holt, J.; Atwater, H.; Kalejs,
J.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p931, 3p; DOI:
10.1063/1.1598643; (AN 10404920)
41. Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial
decoration technique. By: Shao, Lin; Wang, Xuemei; Rusakova, Irene; Chen, Hui; Liu,
Jiarui; Thompson, Phillip E.; Chu, Wei-Kan. Applied Physics Letters, 8/4/2003, Vol.
83 Issue 5, p934, 3p; DOI: 10.1063/1.1596385; (AN 10404919)
42. Organic bistable molecular memory using photochromic diarylethene. By: Tsujioka,
Tsuyoshi; Kondo, Hayato. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p937,
3p; DOI: 10.1063/1.1597966; (AN 10404918)
43. Spin-dependent transmission in waveguides with periodically modulated strength of
the spin-orbit interaction. By: Wang, X. F.; Vasilopoulos, P.. Applied Physics Letters,
8/4/2003, Vol. 83 Issue 5, p940, 3p; DOI: 10.1063/1.1597980; (AN 10404917)
44. Rectification properties of layered boron nitride films on silicon. By: Nose, K.;
Tachibana, K.; Yoshida, T.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p943,
3p; DOI: 10.1063/1.1597744; (AN 10404916)
45. Gettering of Pd to implantation-induced nanocavities in Si. By: Brett, D. A.; de M.
Azevedo, G.; Llewellyn, D. J.; Ridgway, M. C.. Applied Physics Letters, 8/4/2003,
Vol. 83 Issue 5, p946, 2p; DOI: 10.1063/1.1597424; (AN 10404915)
46. Low tunnel magnetoresistance dependence versus bias voltage in double barrier
magnetic tunnel junction. By: Colis, S.; Gieres, G.; Bär, L.; Wecker, J.. Applied
Physics Letters, 8/4/2003, Vol. 83 Issue 5, p948, 3p; DOI: 10.1063/1.1597964; (AN
10404914)
47. Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve
base layers. By: van Dijken, Sebastiaan; Jiang, Xin; Parkin, Stuart S. P.. Applied
Physics Letters, 8/4/2003, Vol. 83 Issue 5, p951, 3p; DOI: 10.1063/1.1592001; (AN
10404913)
48. Magnetization-dependent rectification effect in a Ge-based magnetic heterojunction.
By: Tsui, F.; Ma, L.; He, L.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p954,
3p; DOI: 10.1063/1.1597967; (AN 10404912)
49. Field-driven hysteretic and reversible resistive switch at the Ag–Pr[sub 0.7]Ca[sub
0.3]MnO[sub 3] interface. By: Baikalov, A.; Wang, Y. Q.; Shen, B.; Lorenz, B.; Tsui, S.;
Sun, Y. Y.; Xue, Y. Y.; Chu, C. W.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue
5, p957, 3p; DOI: 10.1063/1.1590741; (AN 10404911)
50. Very large giant magnetoresistance of spin valves with specularly reflective oxide
layers. By: Hong, Jongill; Noma, Kenji; Kanda, Eiichi; Kanai, Hitoshi. Applied Physics
Letters, 8/4/2003, Vol. 83 Issue 5, p960, 3p; DOI: 10.1063/1.1597751; (AN 10404910)
51. YBa[sub 2]Cu[sub 3]O[sub 7-δ] step-edge Josephson junctions fabricated on sapphire
substrates. By: Ming, Bin; Venkatesan, T.. Applied Physics Letters, 8/4/2003, Vol. 83
Issue 5, p963, 3p; DOI: 10.1063/1.1596373; (AN 10404909)
52. Magnetically induced phase separation and magnetic properties of Co–Mo
hexagonal-close-packed structure thin films. By: Oikawa, K.; Qin, G. W.; Sato, M.;
Kitakami, O.; Shimada, Y.; Sato, J.; Fukamichi, K.; Ishida, K.. Applied Physics
Letters, 8/4/2003, Vol. 83 Issue 5, p966, 3p; DOI: 10.1063/1.1597746; (AN 10404908)
53. Effects of magnetic field on two-dimensional superconducting quantum interference
filters. By: Oppenländer, J.; Caputo, P.; Häussler, Ch.; Träuble, T.; Tomes, J.; Friesch,
A.; Schopohl, N.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p969, 3p; DOI:
10.1063/1.1597753; (AN 10404907)
54. Propagating spin wave spectroscopy in a permalloy film: A quantitative analysis. By:
Bailleul, Matthieu; Olligs, Dominik; Fermon, Claude. Applied Physics Letters,
8/4/2003, Vol. 83 Issue 5, p972, 3p; DOI: 10.1063/1.1597745; (AN 10404906)
55. Epitaxial growth and magnetic properties of EuO on (001) Si by molecular-beam
epitaxy. By: Lettieri, J.; Vaithyanathan, V.; Eah, S. K.; Stephens, J.; Sih, V.;
Awschalom, D. D.; Levy, J.; Schlom, D. G.. Applied Physics Letters, 8/4/2003, Vol.
83 Issue 5, p975, 3p; DOI: 10.1063/1.1593832; (AN 10404905)
56. Electric fatigue in Pb(Nb,Zr,Sn,Ti)O[sub 3] thin films grown by a sol–gel process. By:
Zhai, Jiwei; Chen, Haydn. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p978,
3p; DOI: 10.1063/1.1594843; (AN 10404904)
57. Improvement in retention time of metal–ferroelectric–metal– insulator–semiconductor
structures using MgO doped Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3] insulator layer. By:
Tseng, T. Y.; Lee, S. Y.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p981,
3p; DOI: 10.1063/1.1597412; (AN 10404903)
58. Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum
dots. By: Kako, S.; Miyamura, M.; Tachibana, K.; Hoshino, K.; Arakawa, Y.. Applied
Physics Letters, 8/4/2003, Vol. 83 Issue 5, p984, 3p; DOI: 10.1063/1.1596382; (AN
10404902)
59. InGaAs/GaAs three-dimensionally-ordered array of quantum dots. By: Mazur, Yu. I.;
Ma, W. Q.; Wang, X.; Wang, Z. M.; Salamo, G. J.; Xiao, M.; Mishima, T. D.; Johnson,
M. B.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p987, 3p; DOI:
10.1063/1.1596712; (AN 10404901)
60. Fabrication and mechanical characterization of ultrashort nanocantilevers. By: Nilsson,
S. G.; Sarwe, E.-L.; Montelius, L.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5,
p990, 3p; DOI: 10.1063/1.1592303; (AN 10404900)
61. Nanoscale mechanical behavior of individual semiconducting nanobelts. By: Mao,
Scott X.; Zhao, Minhua; Wang, Zhong Lin. Applied Physics Letters, 8/4/2003, Vol. 83
Issue 5, p993, 3p; DOI: 10.1063/1.1597754; (AN 10404899)
62. Polarization-dependent reflectivity from dielectric nanowires. By: Du, Y.; Han, Song;
Jin, Wu; Zhou, C.; Levi, A. F. J.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5,
p996, 3p; DOI: 10.1063/1.1598283; (AN 10404898)
63. Ga-filled single-crystalline MgO nanotube: Wide-temperature range nanothermometer.
By: Li, Y. B.; Bando, Y.; Golberg, D.; Liu, Z. W.. Applied Physics Letters, 8/4/2003,
Vol. 83 Issue 5, p999, 3p; DOI: 10.1063/1.1597422; (AN 10404897)
64. Nanoscale radio-frequency thermometry. By: Schmidt, D. R.; Yung, C. S.; Cleland, A.
N.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1002, 3p; DOI:
10.1063/1.1597983; (AN 10404896)
65. High resolution-high energy x-ray photoelectron spectroscopy using third-generation
synchrotron radiation source, and its application to Si-high k insulator systems. By:
Kobayashi, K.; Yabashi, M.; Takata, Y.; Tokushima, T.; Shin, S.; Tamasaku, K.; Miwa,
D.; Ishikawa, T.; Nohira, H.; Hattori, T.; Sugita, Y.; Nakatsuka, O.; Sakai, A.; Zaima, S..
Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1005, 3p; DOI:
10.1063/1.1595714; (AN 10404895)
66. Temperature-mediated switching of magnetoresistance in Co-contacted multiwall
carbon nanotubes. By: Chakraborty, S.; Walsh, K. M.; Alphenaar, B. W.; Liu, Lei;
Tsukagoshi, K.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1008, 3p; DOI:
10.1063/1.1597965; (AN 10404894)
67. Direct observation of confined states in metallic single-walled carbon nanotubes. By:
Maltezopoulos, Theophilos; Kubetzka, André; Morgenstern, Markus; Wiesendanger,
Roland; Lemay, Serge G.; Dekker, Cees. Applied Physics Letters, 8/4/2003, Vol. 83
Issue 5, p1011, 3p; DOI: 10.1063/1.1598282; (AN 10404893)
68. Size-dependent charge storage in amorphous silicon quantum dots embedded in
silicon nitride. By: Park, Nae-Man; Jeon, Sang-Hun; Yang, Hyun-Deok; Hwang,
Hyunsang; Park, Seong-Ju; Choi, Suk-Ho. Applied Physics Letters, 8/4/2003, Vol.
83 Issue 5, p1014, 3p; DOI: 10.1063/1.1596371; (AN 10404892)
69. Quantum-well microtube constructed from a freestanding thin quantum-well layer. By:
Hosoda, M.; Kishimoto, Y.; Sato, M.; Nashima, S.; Kubota, K.; Saravanan, S.; Vaccaro,
P. O.; Aida, T.; Ohtani, N.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1017,
3p; DOI: 10.1063/1.1599621; (AN 10404891)
70. A monolayer organic light-emitting diode using an organic dye salt. By: Xu,
Hongguang; Meng, Ruiping; Xu, Chunxiang; Zhang, Junxiang; He, Guohua; Cui,
Yiping. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1020, 3p; DOI:
10.1063/1.1591068; (AN 10404890)
71. Generation of coherent gigahertz acoustic phonons in AlGaN/GaN microwave
field-effect transistors. By: Song, Jung-Hoon; Zhang, Qiang; Patterson, W.; Nurmikko,
A. V.; Uren, M. J.; Hilton, K. P.; Balmer, R. S.; Martin, T.. Applied Physics Letters,
8/4/2003, Vol. 83 Issue 5, p1023, 3p; DOI: 10.1063/1.1597982; (AN 10404889)
72. Improving images from a near-field scanning microwave microscope using a hybrid
probe. By: Kim, Jooyoung; Kim, Myungsick; Kim, Hyun; Song, Doohee; Lee, Kiejin;
Friedman, Barry. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1026, 3p; DOI:
10.1063/1.1595134; (AN 10404888)
73. Fabrication and photoresponse of a pn-heterojunction diode composed of transparent
oxide semiconductors, p-NiO and n-ZnO. By: Ohta, Hiromichi; Hirano, Masahiro;
Nakahara, Ken; Maruta, Hideaki; Tanabe, Tetsuhiro; Kamiya, Masao; Kamiya, Toshio;
Hosono, Hideo. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1029, 3p; DOI:
10.1063/1.1598624; (AN 10404887)
74. Near-field scanning microwave microscope using a dielectric resonator. By: Kim,
Jooyoung; Lee, Kiejin; Friedman, Barry; Cha, Deokjoon. Applied Physics Letters,
8/4/2003, Vol. 83 Issue 5, p1032, 3p; DOI: 10.1063/1.1597984; (AN 10404886)
75. High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors
using base regrowth of p-InGaN. By: Makimoto, Toshiki; Kumakura, Kazuhide;
Kobayashi, Naoki. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1035, 3p;
DOI: 10.1063/1.1597989; (AN 10404885)
76. Improved performance and stability of organic light-emitting devices with silicon
oxy-nitride buffer layer. By: Poon, C. O.; Wong, F. L.; Tong, S. W.; Zhang, R. Q.; Lee,
C. S.; Lee, S. T.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1038, 3p; DOI:
10.1063/1.1598287; (AN 10404884)
77. Protein printing with an atomic force sensing nanofountainpen. By: Taha, Hesham;
Marks, Robert S.; Gheber, Levi A.; Rousso, Ittay; Newman, John; Sukenik, Chaim;
Lewis, Aaron. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1041, 3p; DOI:
10.1063/1.1594844; (AN 10404883)
78. Femtosecond electron diffraction for direct measurement of ultrafast atomic motions.
By: Cao, J.; Hao, Z.; Park, H.; Tao, C.; Kau, D.; Blaszczyk, L.. Applied Physics
Letters, 8/4/2003, Vol. 83 Issue 5, p1044, 3p; DOI: 10.1063/1.1593831; (AN
10404882)
79. Catalytic role of boron atoms in self-interstitial clustering in Si. By: Hwang, Gyeong S.;
Goddard, William A.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1047, 3p;
DOI: 10.1063/1.1596729; (AN 10404881)
80. Shorted-end probes for accurate permittivity measurements with time-domain
reflectometry. By: Cereti, Annamaria; Pettinelli, Elena; Galli, Alessandro; Bella,
Francesco. Applied Physics Letters, 8/4/2003, Vol. 83 Issue 5, p1050, 3p; DOI:
10.1063/1.1596724; (AN 10404880)
81. Slow electromagnetic pulse propagation through a narrow transmission band in a
coaxial photonic crystal. By: Munday, J. N.; Robertson, W. M.. Applied Physics
Letters, 8/4/2003, Vol. 83 Issue 5, p1053, 3p; DOI: 10.1063/1.1597416; (AN
10404879)
82. Publisher’s Note: “Sn-enhanced epitaxial thickness during low-temperature Ge(001)
molecular-beam epitaxy” [Appl. Phys. Lett. 82, 4247 (2003)]. By: Bratland, K. A.; Foo,
Y. L.; Desjardins, P.; Greene, J. E.. Applied Physics Letters, 8/4/2003, Vol. 83 Issue
5, p1056, 1p; DOI: 10.1063/1.1597894; (AN 10404878)