2SK4177 - ON Semiconductor

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Ordering number : ENA0869A
2SK4177
N-Channel Power MOSFET
http://onsemi.com
1500V, 2A, 13Ω, TO-263-2L
Features
•
•
ON-resistance RDS(on)=10Ω(typ.)
10V drive
•
Input capacitance Ciss=380pF (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
1500
V
±20
V
Allowable Power Dissipation
ID
IDP
PD
80
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
41
mJ
2
A
Drain Current (Pulse)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
2
A
4
A
Note : *1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7535-001
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
2SK4177-DL-1E
4.5
4
8.0
Packing Type: DL
Marking
1.75
1.2
10.0
1.3
5.3
0.9
7.9
9.2
13.4
1.4
3.0
K4177
LOT No.
DL
0.254
2 3
1.27
0.8
0.5
2.54
2, 4
0 to 0.25
2.4
2.54
Electrical Connection
1.35
1
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
1
3
D0512 TKIM TC-00002833/31208QB TIIM TC-00001270 No. A0869-1/7
2SK4177
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
Conditions
min
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
2.5
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
VDS=20V, ID=1A
0.7
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
μA
±10
μA
3.5
1.4
See Fig.2
13
pF
70
pF
40
pF
12
ns
37
ns
ns
59
ns
37.5
nC
2.7
nC
S
1.2
V
Fig.2 Switching Time Test Circuit
VDD=200V
VIN
ID=1A
RL=190Ω
VIN
D
PW≤10μs
D.C.≤1%
2SK4177
nC
0.88
10V
0V
L
Ω
380
20
IS=2A, VGS=0V
V
S
152
VDS=200V, VGS=10V, ID=2A
G
50Ω
V
100
10
≥50Ω
RG
10V
0V
Unit
max
1500
VDS=30V, f=1MHz
Fig.1 Unclamped Inductive Switching Test Circuit
D
typ
VDD
VOUT
G
2SK4177
P.G
50Ω
S
Ordering Information
Device
2SK4177-DL-1E
Package
Shipping
memo
TO-263-2L
800pcs./reel
Pb Free
No. A0869-2/7
2SK4177
ID -- VDS
4.0
VDS=20V
pulse
8V
2.5
6V
2.0
1.5
5V
1.0
Tc= --25°C
2.5
10V
3.0
Drain Current, ID -- A
Drain Current, ID -- A
3.5
ID -- VGS
3.0
Tc=25°C
pulse
2.0
25°C
1.5
75°C
1.0
0.5
0.5
VGS=4V
0
0
0
5
10
15
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
50
0
4
6
8
10
12
14
16
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
ID=1A
VGS=10V
Tc=75°C
25°C
10
--25°C
5
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
2
°C
25
1.0
5°C
--2
=
°C
Tc
75
3
2
0.1
--25
0
25
5
7
2
0.1
3
5
7
Drain Current, ID -- A
2
1.0
150
IT07133
3
2
0.1
7
5
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT07135
Ciss, Coss, Crss -- VDS
5
f=1MHz
3
2
Ciss, Coss, Crss -- pF
td(off)
2
100
tf
7
5
3
tr
2
1000
7
5
Ciss
3
2
Co
ss
100
7
5
Crss
3
2
td(on)
10
0.1
125
1.0
7
5
IT07134
VDD=200V
VGS=10V
3
100
3
2
0.01
0.2
3
SW Time -- ID
5
75
VGS=0V
3
2
3
50
IS -- VSD
10
7
5
3
5
5
Case Temperature, Tc -- °C
VDS=20V
7
10
IT07132
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
20
yfs -- ID
5
Switching Time, SW Time -- ns
18
15
0
--50
0
0
20
75°C
25°C
--25°C
15
25
Tc=
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
20
20
IT07131
RDS(on) -- Tc
30
ID=1A
25
18
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
30
2
IT07130
10
2
3
5
7
1.0
Drain Current, ID -- A
2
3
IT09037
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT09038
No. A0869-3/7
2SK4177
VGS -- Qg
10
9
7
6
5
4
3
2
0
10
0
20
30
Total Gate Charge, Qg -- nC
0μ
10
DC
3
2
40
20
op
s
0.1
7
5
ati
on
Tc=25°C
Single pulse
2 3
5 7 10
2 3
5 7 100
2 3
5 7 1k
Drain-to-Source Voltage, VDS -- V
Avalanche Energy derating factor -- %
60
s
1m
m
er
2 3
IT16905
EAS -- Ta
120
80
10
0m s
s
Operation in this area
is limited by RDS(on).
IT07138
PD -- Tc
100
μs
10
ID=2A
0.01
1.0
40
10
IDP=4A(PW≤10μs)
1.0
7
5
3
2
1
Allowable Power Dissipation, PD -- W
ASO
3
2
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
10
7
5
VDS=200V
ID=2A
100
80
60
40
20
0
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT12898
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0869-4/7
2SK4177
Taping Specification
2SK4177-DL-1E
No. A0869-5/7
2SK4177
Outline Drawing
2SK4177-DL-1E
Land Pattern Example
Mass (g) Unit
1.5
mm
* For reference
Unit: mm
No. A0869-6/7
2SK4177
Note on usage : Since the 2SK4177 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0869-7/7
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