Data Sheet
Switching Diode
1SS400
Dimensions (Unit : mm)
Applications
High speed switching
Land size figure (Unit : mm)
0.8±0.05
0.12±0.05
1.6±0.1
1.2±0.05
Features
1)Ultra small mold type. (EMD2)
2)High reliability
1.7
0.6
0.8
EMD2
Construction
Silicon epitaxial planar
0.3±0.05
Structure
0.6±0.1
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Taping dimensions (Unit : mm)
0.2±0.05
φ1.5±0.05
2.0±0.05
0.95±0.06
0
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
IFM
Forward voltage(repetitive peak)
Average rectified forward current
Io
Isurge
Surge current(t=1s)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
空ポケット
Empty
pocket 4.0±0.1
Limits
2.0±0.05
1.26±0.05
0
3.5±0.05
0.6
2.45±0.1
1.3±0.06
0
φ0.5
8.0±0.15
1.75±0.1
4.0±0.1
0.2
0.76±0.05
Unit
V
V
mA
mA
mA
C
C
90
80
225
100
500
125
55 to 125
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
IF=100mA
IR
-
-
0.1
μA
VR=80V
Ct
-
-
3
pF
trr
-
-
4
ns
VR=0.5V , f=1MHz
VR=6V , IF=10mA , RL=100Ω
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1/2
2015.04 - Rev.E
Data Sheet
1SS400
10
100000
100
Ta=125℃
10
Ta=25℃
1
Ta=25℃
0.1
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10000
Ta=75℃
1000
100
Ta=25℃
10
Ta=25℃
1
0.01
1
0.1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
0
20
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
40
60
80
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
0
120
100
940
REVERSE CURRENT : IR(nA)
Ta=25℃
IF=100mA
n=30pcs
930
920
AVE:930.3mV
910
5
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
15
1
Ta=25℃
VR=80V
n=30pcs
80
Ta=25℃
VR=0.5V
f=1MHz
n=10pcs
0.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
950
FORWARD VOLTAGE : V F(mV)
f=1MHz
Ta=125℃
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Ta=75℃
60
40
AVE:12.47nA
20
0.8
0.7
0.6
AVE:0.698pF
0.5
0.4
0.3
0.2
0.1
900
0
0
VF DISPERSION MAP
IR DISPERSION MAP
100
5
1cyc
15
8.3ms
10
AVE:4.05A
5
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
Irr=0.1*IR
n=10pcs
4
3
2
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ifsm
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
20
Ct DISPERSION MAP
AVE:1.20ns
1
10
1
Ifsm
8.3m 8.3m
1cyc
0
0
0.1
1
IFSM DISPERSION MAP
trr DISPERSION MAP
1
Ifsm
t
0.1
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IF=10mA
IM=1mA
10
1ms
time
300us
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
0.001
7
6
5
4
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/2
100
AVE:1.58kV
3
2
0
0.01
AVE:6.43kV
8
1
1
0.1
9
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
100
10
1000
100
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
1000
ESD DISPERSION MAP
2015.04 - Rev.E
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
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