AON5810
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
The AON5810 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain
configuration. Standard Product AON5810 is Pb-free
(meets ROHS & Sony 259 specifications). AON5810L
is a Green Product ordering option. AON5810 and
AON5810L are electrically identical.
VDS (V) = 20V
ID = 7.7 A (VGS = 4.5V)
D1
DFN 2X5
S2
S1
G1
RDS(ON) < 18 mΩ (VGS = 4.5V)
RDS(ON) < 19 mΩ (VGS = 4.0V)
RDS(ON) < 21 mΩ (VGS = 3.1V)
RDS(ON) < 25 mΩ (VGS = 2.5V)
RDS(ON) < 40 mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
D2
S2
G2
S1
D1/D2
G1
G2
S1
S2
S2
G2
Top View
G1
S1
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current RθJA=75°C/W
VGS
TA=25°C
Pulsed Drain Current B
Maximum Junction-to-Case B
Alpha & Omega Semiconductor, Ltd.
V
A
6.1
30
1.6
PDSM
W
1.0
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
Units
7.7
IDM
TA=25°C
Power Dissipation A
RθJA=75°C/W
TA=70°C
Junction and Storage Temperature Range
Maximum
20
±12
ID
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
S2
S1
RθJA
RθJC
Typ
30
61
4.5
°C
Max
40
75
6
Units
°C/W
°C/W
°C/W
AON5810
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
TJ=55°C
18
VGS=4.0V, ID=6A
11
14.5
19
VGS=3.1V, ID=6A
13
16.7
21
mΩ
VGS=2.5V, ID=5A
VGS=1.8V, ID=4A
15
20
25
mΩ
32
40
mΩ
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
V
A
26
VSD
Rg
1
14
VDS=5V, ID=7.7A
Reverse Transfer Capacitance
V
0.73
21
Forward Transconductance
Crss
µA
11
gFS
Output Capacitance
µA
16
TJ=125°C
Coss
5
10
VGS=4.5V, ID=7.7A
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=16V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=4.5V, VDS=10V, ID=7.7A
25
28
0.5
0.74
mΩ
mΩ
S
1
V
2.5
A
1360
pF
200
pF
178
pF
1.5
Ω
13.1
nC
2
nC
nC
Qgd
Gate Drain Charge
3.9
tD(on)
Turn-On DelayTime
6.2
ns
tr
Turn-On Rise Time
11
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=5V, VDS=10V, RL=1.4Ω,
RGEN=3Ω
40.5
ns
10
ns
IF=7.7A, dI/dt=100A/µs
18.8
Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/µs
8.1
ns
nC
Body Diode Reverse Recovery Time
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Sep. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON5810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
10V
VDS=5V
25
15
4V
20
6V
ID(A)
ID (A)
2.5V
3V
15
10
125°C
VGS=2V
0.5
10
1
5
5
25°C
0
0
0
1
2
3
4
0
5
0.5
50
1.5
2
2.5
1.8
30
Normalized On-Resistance
VGS=1.8V
40
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=2.5V
20
VGS=4.5V
10
VGS=10V
VGS=2.5V
ID=5A
1.6
VGS=4.5V
ID=7.7A
1.4
1.2
VGS=10V
ID=8A
VGS=1.8V
ID=4A
1
0
0
5
10
15
20
0.8
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
50
1.0E+00
40
1.0E-01
30
IS (A)
RDS(ON) (mΩ )
ID=7.7A
125°C
125°C
1.0E-02
25°C
1.0E-03
20
25°C
10
1.0E-04
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AON5810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
2400
VDS=10V
ID=7.7A
A
Ciss
1800
Capacitance (pF)
VGS (Volts)
4
3
2
1200
0.5
1
600
1
Coss
0
0
3
6
9
12
Crss
0
15
0
5
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
15
200
10µs
ID (Amps)
10.0
160
Power (W)
RDS(ON)
limited
100µs
1ms
10ms
100ms
1s
10s
1.0
DC
TJ(Max)=150°C, T A=25°C
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
120
80
40
0
0.0001
0.1
0.1
TJ(Max)=150°C
TA=25°C
100
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note E)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000