IRF7304PbF-1
HEXFET® Power MOSFET
VDS
-20
RDS(on) max
(@VGS = -4.5V)
Qg
ID
(@TA = 25°C)
V
0.09
Ω
22
nC
-4.3
A
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7304PbF-1
SO-8
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7304PbF-1
IRF7304TRPbF-1
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C
I D @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
-4.7
-4.3
-3.4
-17
2.0
0.016
±12
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
1
Maximum Junction-to-Ambient
Typ.
Max.
Units
62.5
°C/W
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7304PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units
Conditions
-20
V
VGS = 0V, ID = -250µA
-0.012 V/°C Reference to 25°C, ID = -1mA
0.090
VGS = -4.5V, ID = -2.2A
Ω
0.140
VGS = -2.7V, ID = -1.8A
-0.70
V
VDS = VGS, ID = -250µA
4.0
S
VDS = -16V, ID = -2.2A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
22
ID = -2.2A
3.3
nC VDS = -16V
9.0
VGS = -4.5V, See Fig. 6 and 12
8.4
VDD = -10V
26
ID = -2.2A
ns
51
RG = 6.0Ω
33
RD = 4.5Ω, See Fig. 10
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
6.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
610
310
170
IGSS
4.0
D
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = -15V
= 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
IS
ISM
VSD
trr
Qrr
ton
Min. Typ. Max. Units
-2.5
-17
56
71
-1.0
84
110
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C, IF = -2.2A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7304PbF-1
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
-1.5V
20μs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
-ID , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
0.1
1
10
10
1
-1.5V
20μs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 150°C
1
VDS = -15V
20μs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
A
100
Fig 2. Typical Output Characteristics
100
TJ = 25°C
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
1
5.0
A
I D = -3.6A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
A
100 120 140 160
November 14, 2013
IRF7304PbF-1
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1500
Ciss
1000
Coss
Crss
500
0
1
10
100
A
I D = -2.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
-VDS , Drain-to-Source Voltage (V)
10
15
20
A
25
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
5
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.3
0.6
0.9
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.5
10
1ms
1
TA = 25 °C
TJ = 150 °C
Single Pulse
1
10ms
10
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
100
IRF7304PbF-1
V DS
V GS
5.0
D.U.T.
RG
-ID , Drain Current (A)
4.0
RD
-
+
V DD
-4.5 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
10%
VGS
150
td(on)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
100
IRF7304PbF-1
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-4.5 V
QGS
.2μF
12V
.3μF
D.U.T.
QGD
+VDS
VGS
VG
-3mA
IG
Charge
Fig 12a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7304PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
RG
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
-
*
V DD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
7
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7304PbF-1
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
MIL L IMET ER S
MAX
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B AS IC
1.27 B AS IC
MAX
.025 B AS IC
0.635 B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
e1
6X
INCHE S
MIN
K x 45°
A
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
F OOT PR INT
NOT E S :
1. DIME NS IONING & T OL E R ANCING PE R AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROL L ING DIME NS ION: MIL L IME T E R
3. DIME NS IONS AR E S HOWN IN MIL L IME T E RS [INCHE S ].
4. OU T L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5 DIME NS ION DOE S NOT INCL U DE MOL D PROT R U S IONS .
MOL D PR OT RU S IONS NOT T O E XCE E D 0.15 [.006].
6.46 [.255]
6 DIME NS ION DOE S NOT INCL U DE MOL D PROT R U S IONS .
MOL D PR OT RU S IONS NOT T O E XCE E D 0.25 [.010].
7 DIME NS ION IS T H E L E NGT H OF L E AD F OR S OL DE RING T O
A S U B S T R AT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
E XAMPL E : T HIS IS AN IR F 7101 (MOS F E T )
INT E RNAT IONAL
R E CT IF IE R
L OGO
XXXX
F 7101
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PR ODU CT (OPT IONAL )
Y = L AS T DIGIT OF T HE YE AR
WW = WE E K
A = AS S E MB L Y S IT E CODE
L OT CODE
PART NU MB E R
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7304PbF-1
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
RoHS compliant
SO-8
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
0
