2012
M. Ackermann, V. Hein, K. Weide-Zaage: „Simulation-based prediction of reliability
and robustness of interconnect systems for semiconductor applications”, accepted
EuroSimE 2012
J. Kludt, J. Ciptokusumo, K. Weide-Zaage: „Influence of Liner Materials on the
Mechanical Stress and Migration in a Copper Metallization”, accepted EuroSimE
2012
2011
I. Bauer, K. Weide-Zaage, L. Meinshausen: „Influence of Air Gaps on the Thermal
Electrical Mechanical Behavior of a Copper Metallization“, IEEE, European
Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
2011, p.1587-1591.
2010
Weide-Zaage, K.; Ciptokusumo, J., Aubel, O.: „Influence of the Activation Energy of
the Different Migration Effects on Failure locations in Metallizations”, AIP Conf. Proc.
-- November 24, 2010 -- Volume 1300, pp. 85-90.
Ciptokusumo, J., Weide-Zaage, K.; Aubel, O.: „ Mechanical Characterization of
Copper based Metallizations with different Via-Bottom Geometries”, Physical and
Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International
Symposium on the Juli 2010, p.1-5.
Weide-Zaage, K: “Exemplified calculation of stress migration in a 90nm node via
structure”, IEEE Thermal, Mechanical and Multi-Physics Simulation and Experiments
in Microelectronics and Micro-Systems, EuroSimE 2010, (Keynote) p. 1-4.
Ciptokusumo, J., Weide-Zaage, K., Aubel, O.: „Principles for Simulation of Barrier
Cracking due to high Stress”, IEEE Thermal, Mechanical and Multi-Physics
Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2010,
p. 1-4.
2009
Ciptokusumo, J., Weide-Zaage, K., Aubel, O: “Investigation of Stress Distribution in
Via Bottom of Cu-Via Structures with different Via form by means of Submodeling”,
Microelectronics Reliability, Volume 49, Issues 9-11, 2009, pp.: 1090-1095 (Best
Paper)
K. Weide-Zaage, Finite Element Simulations of Metallization Structures for Reliability
Prediction, Book Chapter 12, Chemical Mineralogy, Smelting and Metallization, 2009,
pp. 249-288.
2008
K. Weide-Zaage, F. Kashanchi, O. Aubel,: “Simulation of Migration Effects in
Nanoscaled Copper Metallizations”, Microelectronics Reliability 48, 2008, pp. 13981402.
K. Weide-Zaage, J. Zhao, J. Ciptokusumo, et.al: “Determination of Migration Effects
in Cu-Via Structures with Respect to Process Induced Stress”, Microelectronics
Reliability 48, 2008, pp.1393–1397.
O. Aubel, S. Thierbach, R. Seidel, B. Freudenberg, M.A. Meyer, F. Feustel, J. Poppe,
M. Nopper, A. Preusse, C. Zistl, K. Weide-Zaage , “Comprehensive reliability analysis
of CoWP Metal Cap unit processes for high volume production in sub-µm
dimensions”, IEEE 46th Annual IRPS, Phoenix, 2008, pp.675-676
2007
Weide-Zaage, K.; Dalleau, D.; Danto, Y.; Fremont, H.: „Dynamic Void formation in a
DD-copper-structure with different metallization geometry”, Micro. Reliability, Vol. 47
(2007), pp.319-325.
2005
Weide-Zaage, K., Hein, V.; “Simulation of Mass Flux Divergence Distributions for an
Evaluation of Commercial Test Structures with Tungsten-plugs”, Proc. 6rd. Int. Conf.
Benf. Therm. Mech. Simu. Microelec. EuroSIME 2005 p.353-358.
2004
Nguyen, H.V.; Salm, C.; Krabbenborg, B.; Weide-Zaage, K.; Bisshop, J,; Mouthaan,
A.J.; Kuper, FG.: „Effect of Thermal Gradients on the Electromigration Lifetime in
Power Electronics“,Proc. Conf. IEEE/IRPS, Phoenix April 2004, pp. 619-620.
Weide-Zaage, K.; Dalleau, D.; Danto, Y.; Fremont, H.: „Void formation in a coppervia-structure depending on the stress free temperature and metallization geometry,
accepted for publication Proc. 5rd. Int. Conf. Benf. Therm. Mech. Simu. Microelec.
EuroSIME 2004, pp.367-372.
2003
Dalleau, D.; Weide-Zaage, K.; Danto, Y.: „Simulation of time depending void
formation in copper, aluminum and tungsten plugged via structures”, Micro.
Reliability, Vol. 43 (2003), pp.1821-1826.
Weide-Zaage, K.; Dalleau, D.; Yu, X.: ”Stationary and dynamic analysis of failure
locations and void formation in interconnects due to the different migration
mechanisms”, Materials Science in Semiconductor Processing 6 (2003), pp 85-92.
2002
Dalleau, D.; Weide-Zaage, K.: „ 3-D Time-depending Simulation of Voids formation in
a SWEAT Metallization Structure”, Proc. 3rd. Int. Conf. Benf. Therm. Mech. Simu.
Microelec. EuroSIME April 2002, pp.310-315.
2001
Dalleau, D.; Weide-Zaage, K.: „ Three-Dimensional Voids Simulation in chip
Metallization Structures: a Contribution to reliability Evaluation”, Micro. Reliability,
Vol. 41 (2001) pp.1625-1630.
Willemen, J.; Soppa, W.; Pieper, K.-W.; Weide-Zaage, K.; Keck, C.; Gärtner, R.:
„Vergleich industrieller Entwicklungswerkzeuge für elektrothermische Schaltungssimulation“, 10. E.I.S.-Workshop, ITG Fachbericht „Entwurf Integrierter
Schaltungen und Systeme“ , 2001, pp. 143-146.
2000
Dalleau, D.; Weide-Zaage, K.: “3-D Time-Depending Electro- and Thermomigration
Simulation of Metallization Structures.”, Adv. Met. Conf. (AMC 2000), Proc. Conf.,
Edelstein, D.; Dixit, G.; et.al., PA, USA, USA: Mater. Res. Soc, 2000, xx+706 p.47781.
1999
Yu, X.; Weide, K.: “Investigations of mechanical stressmigration in an aluminum test
structure”, Adv. Met. Conf. (AMC 1998), Proc. Conf. Sandhu, G.S.; Koerner, H.;
et.al., Warrendale, PA, USA, USA: Mater. Res. Soc, 1999,Oktober 1998, pp. 469473.
1998
Yu, X; Weide, K.: „Finite Element Analysis of Thermal-Mechanical Stress induced
Failure in Interconnects“, MRS Boston December 1998, MRS Proc.1999, pp 269-274.
1997
Yu, X.; Weide, K.: “A study of the thermal-electrical- and mechanical influence on
degradation in an aluminum-pad structure”, Microelectronic. Reliab., Vol.37,
No.10/11, 1997, pp. 1545-1548.
Yu, X.; Weide, K.: “Investigations of mechanical Stress and Electromigration in an
aluminum meander structure”, Proc. Conf. SPIE Vol. 3216, Microelectronic
Manufacturing Yield, Reliability, and Failure Analysis III, Austin Oktober 1997,
pp.160-166.
1996
Weide, K.; Menhorn, F,; Yu, X.: "Finite element investigations of mechanical stress in
metallization structures“, Microelec. Reliab., Vol.36, No.11/12, 1996, pp. 1703-1706.
1995
Weide, K.; Ullmann, J.: "Temperature and Current Density Distributions in Via
Structures with Inhomogeneous Step Coverages", Proc. Conf. SPIE Vol. 2635,
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, Austin Oktober
1995, pp.145-155.
Weide, K.; Yu, X.; Quintard, V.: "Simulation and Measurement of an Aluminum
Meander Structure, Proc. 7th Int. Conf. Qual. Elec. Comp. & 6th Eur. Symp. Rel.Elec.
Dev., Bordeaux Oktober 1995, pp.241-246.
Weide, K; Ullmann, J; Hasse, W.: "Model Calculations on a Bipolar Transistor Emitter
Interconnection with Different Contact Shapes", Applied Surface Science 91 (1995)
pp.234-238.
1994
Weide, K.; Hasse, W.: "Electromigration Resistance of an ULSI Copper Via Structure
Compared with a Tungsten and an Aluminum-Plug Via Structure with Barrier Layers",
MRS Proc. of the Advanced Metallization for ULSI Applications Conf., Austin Oktober
1994, pp 397.
Weide, K.; Hasse, W.: "Failure Locations in Different Via Structures due to
Electromigration", Proc. Int. Conf. 5th Eur. Symp. Rel.Elec. Dev., Glasgow Oktober
1994, pp. 365-369.
Weide, K.; Hasse, W.: "Prediction of the Failure Locations in Multilevel Metallizations
due to Triple Points, Current Crowding an Temperature Gradients", Proc. 11.
VLSI/VMIC, Santa Clara Juni 1994, pp. 536-538.
Weide,
K.:
Untersuchung
von
Stromdichte-,
Temperaturund
Massenflußverteilungen in Viastrukturen integrierter Schaltungen, VDI Verlag, Reihe
9, Elektronik, Nr, 184, 1994
1993
Weide, K.; Hasse, W.: "3-Dimensional FEM-Simulations and Measurement of Via
Structures", Proc. 6th Int. Conf. Qual. Elec. Comp. & 4th Eur. Symp. Rel.Elec. Dev.,
Arcachon Oktober 1993, pp. 313-317.
1992
Hasse, W.; Depta, D.; Weide, K.: "Thermal-Electrical Characterisation of SWEATStructures", Proc. Int. Conf. 3th Eur. Symp. Rel.Elec. Dev, Schwäbisch-Gemünd
Oktober 1992, pp. 371-375.
Weide, K.; Hasse, W.: "3-dimensional Simulations of Temperature and Current
Density Distribution in a Via Structure", Proc. Conf. IEEE/IRPS, San Diego März
1992, pp. 361-365.
1991
Weide, K.; Bergmann, J.; Hasse, W.; Depta, D.: "Simulations of Current and Potential
Distribution in a Via Structure and a Laser Formed Contact", Proc. 5th Int. Conf. Qual.
Elec. Comp. & 2nd Eur. Symp. Rel. Elec. Dev., Bordeaux, Oktober 1991, pp. 907-913.