NTGD1100L, STGD1100L
Power MOSFET
8 V, ±3.3 A, Load Switch with Level−Shift,
P−Channel, TSOP−6
The NTGD1100L integrates a P and N−Channel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The P−Channel device is
specifically designed as a load switch using ON Semiconductor
state−of−the−art trench technology. The N−Channel, with an external
resistor (R1), functions as a level−shift to drive the P−Channel. The
N−Channel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both VIN and VON/OFF
www.onsemi.com
V(BR)DSS
RDS(on) TYP
8.0 V
±3.3 A
55 m @ −2.5 V
80 m @ −1.8 V
SIMPLIFIED SCHEMATIC
4
2,3
Q2
Features
•
•
•
•
•
•
•
ID MAX
40 m @ −4.5 V
Extremely Low RDS(on) Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 2000 V
These Devices are Pb−Free and are RoHS Compliant
6
Q1
5
1
MARKING DIAGRAM &
PIN ASSIGNMENT
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Input Voltage (VDSS, P−Ch)
ON/OFF Voltage (VGS, N−Ch)
Continuous Load Current Steady
(Note 1)
State
TA = 25°C
Power Dissipation
(Note 1)
TA = 25°C
Steady
State
Pulsed Load Current
Symbol
Value
Unit
VIN
8.0
V
VON/OFF
8.0
V
IL
±3.3
A
±2.4
TA = 85°C
PD
TA = 85°C
tp = 10 s
Operating Junction and Storage Temperature
Source Current (Body Diode)
ESD Rating, MIL−STD−883D HBM
(100 pF, 1.5 k)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D1/G2
6
1
TSOP−6
CASE 318G
STYLE 11
0.43
ILM
±10
A
1
S1
TJ,
TSTG
−55 to
150
°C
IS
−1.0
A
ESD
2.0
kV
TL
260
°C
TZ
M
G
2 3
D2 D2
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
S2
4
TZ M G
G
W
0.83
G1
5
Package
Shipping†
NTGD1100LT1G
TSOP−6 3000 / Tape & Reel
(Pb−Free)
STGD1100LT1G
TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 11
1
Publication Order Number:
NTGD1100L/D
NTGD1100L, STGD1100L
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 2)
RJA
150
°C/W
Junction−to−Foot – Steady State (Note 2)
RJF
50
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Q2 Drain−to−Source Breakdown Voltage
VIN
VGS2 = 0 V, ID2 = −250 A
8.0
Forward Leakage Current
IFL
VGS1 = 0 V,
VDS1 = 8.0 V
Typ
Max
Unit
OFF CHARACTERISTICS
V
TJ = 25°C
1.0
TJ = 125°C
10
Q2 Gate−to−Source Leakage Current
IGSS
VDS2 = 0 V, VGS2 = ±8.0 V
Q2 Diode Forward On−Voltage
VSD
IS = −1.0 A, VGS2 = 0 V
−0.7
A
±100
nA
−1.0
V
ON CHARACTERISTICS
Voltage ON/OFF
VON/OFF
Q1 Gate Threshold Voltage
1.5
8.0
V
VGS1 = VDS1, ID = 50 A
0.6
1.2
V
VGS2 = VDS2, ID = 250 A
1.8
VGS1
Input Voltage
VIN
Q2 Drain−to−Source On Resistance
RDS(on)
VON/OFF = 1.5 V,
IL = 1.0 A
8.0
V
VIN = 4.5 V
40
55
m
VIN = 2.5 V
55
70
80
140
VIN = 1.8 V
Load Current
IL
VDROP ≤ 0.2 V, VIN = 5.0 V,
VON/OFF = 1.5 V
1.0
VDROP ≤ 0.2 V, VIN = 2.5 V,
VON/OFF = 1.5 V
1.0
VDROP ≤ 0.2 V, VIN = 1.8 V,
VON/OFF = 1.5 V
1.0
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4
VIN
2,3
VOUT
Q2
R1
C1
6
ON/OFF
6
5
CO
LOAD
Q1
1
CI
R2
R2
GND
Figure 1. Load Switch Application
Components
Description
Values
R1
Pullup Resistor
Typical 10 k to 1.0 M
R2
Optional Slew−Rate Control
Typical 0 to 100 k
C0
Output Capacitance
Usually < 1.0 F
C1
Optional In−Rush Current Control
Typical ≤ 1000 pF
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2
NTGD1100L, STGD1100L
TYPICAL CHARACTERISTICS
0.300
0.400
0.350
0.250
0.200
0.250
VDROP, (V)
VDROP, (V)
0.300
TJ = 125°C
0.200
0.150
TJ = 25°C
TJ = 125°C
0.150
TJ = 25°C
0.100
0.100
0.050
0.050
0
0
0
0
0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00
0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00
IL, (A)
IL, (A)
Figure 3. VDROP vs. IL @ VIN = 4.5 V
TJ = 125°C
TJ = 25°C
IL = 1.0 A
VON/OFF = 1.5 to 8.0 V
0
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0.50
0.48
0.46
0.44
0.42
0.40
0.38
0.36
0.34
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.15
0.14 IL = 1.0 A
0.13 VON/OFF = 1.5 to 8.0 V
0.12
0.11
0.10
VIN = 1.8 V
0.09
0.08
0.07
0.06
VIN = 5.0 V
0.05
0.04
0.03
0.02
0.01
0
−50
−25
0
25
50
75
100
125
VIN, (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On Resistance vs. Input Voltage
Figure 5. On Resistance Variation with
Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 2. VDROP vs. IL @ VIN = 2.5 V
1.7
1.5
IL = 1.0 A
VON/OFF = 1.5 to 8.0 V
VIN = 5.0 V
1.3
1.1
VIN = 1.8 V
0.9
0.7
−50
−25
0
25
50
75
100
125
150
TJ, TEMPERATURE JUNCTION (°C)
Figure 6. Normalized On Resistance Variation with
Temperature
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3
150
NTGD1100L, STGD1100L
TYPICAL CHARACTERISTICS
60
60
IL = 1.0 A
VON/OFF = 1.5 V
C1 = 10 F
C0 = 1.0 F
45
40
35
30
55
50
td(off)
TIME (S)
TIME (S)
55
50
tf
25
20
tr
15
10
0
1
2
3
4
5
45
40
35
30
tf
25
20
15
10
td(on)
5
0
td(off)
IL = 1.0 A
VON/OFF = 3.0 V
C1 = 10 F
C0 = 1.0 F
tr
5
0
6
7
8
td(on)
0
1
2
3
R2 (k)
6
7
8
Figure 8. Switching Variation R2 @
VIN = 4.5 V, R1 = 20 kW
30
40
35
tf
25
30
tr
tf
25
20
td(off)
IL = 1.0 A
VON/OFF = 1.5 V
C1 = 10 F
C0 = 1.0 F
15
10
TIME (S)
TIME (S)
5
R2 (k)
Figure 7. Switching Variation R2 @
VIN = 4.5 V, R1 = 20 kW
td(on)
20
td(off)
15
IL = 1.0 A
VON/OFF = 3.0 V
C1 = 10 F
C0 = 1.0 F
10
tr
5
5
0
td(on)
0
0
1
2
3
4
5
6
7
0
8
1
2
3
4
5
6
7
8
R2 (k)
R2 (k)
Figure 9. Switching Variation R2 @
VIN = 2.5 V, R1 = 20 kW
RJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
4
Figure 10. Switching Variation R2 @
VIN = 2.5 V, R1 = 20 kW
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
1E−03
Single Pulse
0.01
1E−02
1E−01
1E+00
1E+01
1E+02
SQUARE WAVE PULSE DURATION TIME, t (sec)
Figure 11. FET Thermal Response Normalized to RqJA at Steady State (1 inch Pad)
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4
1E+03
NTGD1100L, STGD1100L
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
D
H
6
E1
5
ÉÉÉ
1
NOTE 5
2
4
L2
GAUGE
PLANE
E
3
L
M
b
SEATING
PLANE
DETAIL Z
e
0.05
C
A
c
A1
DETAIL Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10°
−
STYLE 11:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1/GATE 2
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
6X
3.20
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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5
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For additional information, please contact your local
Sales Representative
NTGD1100L/D